CN208077623U - The flat panel detector of indirect type - Google Patents
The flat panel detector of indirect type Download PDFInfo
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- CN208077623U CN208077623U CN201820596658.7U CN201820596658U CN208077623U CN 208077623 U CN208077623 U CN 208077623U CN 201820596658 U CN201820596658 U CN 201820596658U CN 208077623 U CN208077623 U CN 208077623U
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- transparency conducting
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- panel detector
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Abstract
The utility model provides the flat panel detector of indirect type.The flat panel detector of the indirect type includes：Imaging unit, bias conductive layer, the first antistatic backing on bias conductive layer on imaging unit for providing bias voltage, first antistatic backing is mutually insulated by the first insulating layer and bias conductive layer, and the first antistatic backing includes the first transparency conducting layer.In the flat panel detector that the utility model embodiment provides, first antistatic backing is set on bias conductive layer, and mutually insulated between first antistatic backing and bias conductive layer is realized by the first insulating layer, it prevents from short cut with each other between first antistatic backing and bias conductive layer；And first antistatic backing is used to the electrostatic generated on first antistatic backing being oriented to the earth, avoids electrostatic and imports imaging unit by bias conductive layer, to lead to the problem of interference to the imaging effect of imaging unit.
Description
Technical field
The utility model is related to display technology fields, specifically, the utility model is related to the flat panel detectors of indirect type.
Background technology
Currently, since X-ray (Digital Radiography, DR) equipment can be clearly captured out patient body
Interior a variety of organs, are widely used in medical imaging techniques field.
Existing DR equipment generally use is one-dimensional or two-dimensional Flat X-ray detector (Flat X-ray Panel
Detector, FPXD), X-ray detector can convert X-ray information to digital image information.Existing DR equipment is most of
Using two-dimensional flat plate X-ray detector, two-dimensional flat plate X-ray detector includes that direct flat plate detector and indirect type tablet are visited
Survey device, wherein the application of indirect type flat panel detector is particularly extensive.
Existing indirect type flat panel detector is more sensitive to electrostatic, finds to detect when indirect type tablet by test experiments
When the electrostatic on the imaging unit surface in device is more than 300 volts, indirect type flat panel detector the case where it is easy to appear operation irregularities,
It specifically includes：Imaging unit in indirect type flat panel detector shows exception since image occurs in electrostatic interference, or directly results in
The damage of indirect type flat panel detector such as can not work at the situations.
The indirect type flat panel detector of usual finished product is provided with metal shell or outline border, can by the metal shell or outline border
By the electrostatic export in flat panel detector, reduce the probability of electrostatic damage.But in actual fabrication indirect type flat panel detector
In the process, due to not having the protection of metal shell or outline border, the antistatic effect of flat panel detector is poor, for example, tablet detects
A tunic (for example, scintillator or luminescent coating) is provided on device, which is used to convert X-ray to visible light, is visited in tablet
It surveys on device when attaching the film, it is easy to electrostatic is generated in the film layer mutually attached with the film, it is antistatic due to flat panel detector
Ability is poor, the electrostatic can be transmitted to imaging unit by each conductive film layer on flat panel detector, to imaging unit
It damages so that the yield rate of flat panel detector/quality declines.
Utility model content
In view of the above-mentioned problems, the utility model proposes the flat panel detectors of indirect type, specifically in flat panel detector
Increase antistatic backing in film layer so that the electrostatic in flat panel detector can be exported by antistatic backing, improve the flat of indirect type
The antistatic effect of partitioned detector especially improves the anti-of during making indirect type flat panel detector flat panel detector
Electrostatic capacity.
The utility model embodiment provides a kind of flat panel detector of indirect type, including：
Imaging unit, is located at bias conductive layer at the bias conductive layer for being used to provide bias voltage on imaging unit
The first antistatic backing, the first antistatic backing mutually insulated by the first insulating layer and bias conductive layer, and the first antistatic backing includes
First transparency conducting layer.
Preferably, the first transparency conducting layer, which is located above bias conductive layer, covers bias conductive layer, and with bias conductive layer
Shape it is consistent.
Preferably, the first transparency conducting layer is grounded；Or
Further include：It is set to second antistatic backing on imaging unit periphery, second antistatic backing and the first electrically conducting transparent
Layer connection and ground connection.
Preferably, the first antistatic backing further includes being located at mutually insulating with the first transparency conducting layer on the first transparency conducting layer
The second transparency conducting layer being arranged；
First transparency conducting layer is connected with the second transparency conducting layer, and the first transparency conducting layer and the second transparency conducting layer are equal
Ground connection；Alternatively, flat panel detector provided by the utility model further includes：It is set to the third antistatic backing on imaging unit periphery,
The third antistatic backing connect and is grounded with the first transparency conducting layer and the second transparency conducting layer, the first transparency conducting layer and second
Transparency conducting layer is connected.
Preferably, the second transparency conducting layer, which is located above the first transparency conducting layer, covers the first transparency conducting layer, and second
Transparency conducting layer is consistent with the shape of the first transparency conducting layer.
Preferably, the first transparency conducting layer and the second transparency conducting layer are netted tin indium oxide or indium zinc oxide film；
Preferably, the thickness of the first transparency conducting layer is 300~700 nanometers, the thickness of the second transparency conducting layer is 300~
700 nanometers.
It is had the beneficial effect that using what the utility model embodiment was obtained：
1, in the flat panel detector for the indirect type that the utility model embodiment provides, it is arranged first on bias conductive layer
Antistatic backing, and mutually insulated between first antistatic backing and bias conductive layer is realized by the first insulating layer, prevent this
It short cut with each other between one antistatic backing and bias conductive layer；And first antistatic backing is used for will be in first antistatic backing
The electrostatic of generation is oriented to the earth, avoids electrostatic and imports imaging unit by bias conductive layer, to the imaging to imaging unit
Effect leads to the problem of interference, reduces that cause the flat panel detector of indirect type to damage due to electrostatic in the production process several
Rate, and then improve yield rate/quality of flat panel detector.For example, being attached on the flat panel detector of indirect type for penetrating X
(for example, scintillator or luminescent coating) is in antistatic backing for the utility model embodiment when line is converted into the film of visible light
Upper attaching film, the earth will be oriented to by antistatic backing by attaching the electrostatic generated in the process, be avoided the electrostatic and be imported imaging list
Member.
2, in a kind of flat panel detector for indirect type that the utility model embodiment provides, it is arranged on bias conductive layer
There is bilayer conductive film (the first transparency conducting layer and the second transparency conducting layer), in practical applications, if in the second electrically conducting transparent
The electrostatic that is generated on layer without being oriented to the earth completely, since the second transparency conducting layer is connected with the first transparency conducting layer, then second
Remaining electrostatic can be oriented to the first transparency conducting layer on transparency conducting layer, and be oriented to again greatly by the first transparency conducting layer
Ground, i.e.,：Electrostatic is further prevented to be oriented to the probability of imaging unit.
3, specifically the first antistatic backing is arranged on bias conductive layer for the utility model embodiment, and first antistatic
Layer is consistent with the shape of bias conductive layer, avoids the light on the first antistatic backing blocking imaging unit, influences flat panel detector
Effect on Detecting.
The additional aspect of the utility model and advantage will be set forth in part in the description, these will be from following description
In become apparent, or recognized by the practice of the utility model.
Description of the drawings
The utility model is above-mentioned and/or additional aspect and advantage from the following description of the accompanying drawings of embodiments will
Become apparent and is readily appreciated that, wherein：
Fig. 1 is a kind of structural schematic diagram of the flat panel detector of indirect type provided by the utility model；
Fig. 2 is the structural schematic diagram of the flat panel detector of another indirect type provided by the utility model；
Fig. 3 is the structural schematic diagram of the flat panel detector of another indirect type provided by the utility model；
Fig. 4 be the first transparency conducting layer in a kind of flat panel detector of the indirect type based on Fig. 3 provided by the utility model,
The connected schematic diagram of second transparency conducting layer；
Fig. 5 is a kind of schematic diagram by the structure composition array in multiple Fig. 1 provided by the utility model；
Reference numeral is described below：
101- imaging units, 1011-ITO lids, 102- bias conductive layers, 103- the first antistatic backing (the first electrically conducting transparents
Layer), the first insulating layers of 104-, the second transparency conducting layers of 105-, 106- second insulating layers, 107- substrates, 108- grids, 109- grid
Pole insulating layer, 110- active layers, 111- first electrode layers, 112- third insulating layers, 113- the second electrode lays, 114- the 4th insulate
Layer, the 5th insulating layers of 115-, the 6th insulating layers of 116-.
Specific implementation mode
The embodiments of the present invention are described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and cannot be construed to the utility model
Limitation.
Those skilled in the art of the present technique are appreciated that unless expressly stated, singulative " one " used herein, " one
It is a ", " described " and "the" may also comprise plural form.It is to be further understood that being used in the specification of the utility model
Wording " comprising " refer to that there are the feature, integer, step, operation, element and/or component, but it is not excluded that in the presence of or
Other one or more features of addition, integer, step, operation, element, component and/or their group.It should be understood that working as us
Claim element to be " connected " or when " coupled " to another element, it can be directly connected or coupled to other elements, or can also
There are intermediary elements.In addition, " connection " used herein or " coupling " may include being wirelessly connected or wirelessly coupling.Used here as
Wording "and/or" include one or more associated list items whole or any cell and all combine.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, all terms used herein (including technology art
Language and scientific terminology), there is meaning identical with the general understanding of the those of ordinary skill in the utility model fields.Also
It should be understood that those terms such as defined in the general dictionary, it should be understood that have and the context of the prior art
In the consistent meaning of meaning otherwise will not use idealization or too formal and unless by specific definitions as here
Meaning is explained.
The following detailed description of the embodiments of the present invention.
The utility model embodiment provides a kind of flat panel detector of indirect type, the structural schematic diagram of the flat panel detector
As shown in Figure 1, specifically including with lower component：
Imaging unit 101, is located at bias at the bias conductive layer 102 for being used to provide bias voltage on imaging unit 101
The first antistatic backing 103 on conductive layer 102, the first antistatic backing 103 pass through the first insulating layer 104 and bias conductive layer 102
It mutually insulate, antistatic backing 103 includes the first transparency conducting layer.
It is had the beneficial effect that using what the utility model embodiment was obtained：
In the flat panel detector for the indirect type that the utility model embodiment provides, it is anti-that first is arranged on bias conductive layer
Electrostatic layer, and mutually insulated between first antistatic backing and bias conductive layer is realized by the first insulating layer, prevent this first
It short cut with each other between antistatic backing and bias conductive layer；And first antistatic backing on first antistatic backing for that will produce
Raw electrostatic is oriented to the earth, avoids electrostatic and imports imaging unit by bias conductive layer, to be imitated to the imaging of imaging unit
Fruit leads to the problem of interference, reduces that cause the flat panel detector of indirect type to damage due to electrostatic in the production process several
Rate, and then improve yield rate/quality of flat panel detector.For example, being attached on the flat panel detector of indirect type for penetrating X
(for example, scintillator or luminescent coating) is in antistatic backing for the utility model embodiment when line is converted into the film of visible light
Upper attaching film, the earth will be oriented to by antistatic backing by attaching the electrostatic generated in the process, be avoided the electrostatic and be imported imaging list
Member.
For the utility model embodiment, first is provided between bias conductive layer 102 and the first transparency conducting layer 103
Insulating layer 104 prevents from bringing harmful effect due to short cut with each other between bias conductive layer 102 and the first transparency conducting layer 103,
And it further avoids being oriented to bias conductive layer by the first transparency conducting layer 103 in the electrostatic for preparing flat panel detector generation
102, and then the problem of guiding imaging unit 101.Specifically, the first insulating layer 104 can be silicon nitride (SiNx) insulating layer.
Concretely PIN type diode (includes P-type semiconductor, sheet to imaging unit 101 in the utility model embodiment
Sign type semiconductor and N-type semiconductor), the material of various semiconductor can be selected according to actual conditions in PIN type diode, this practicality
New embodiment is to this without specifically limiting.
The utility model embodiment provides a kind of preferred embodiment, as shown in Fig. 2, being specially：First electrically conducting transparent
Layer 103 is located at 102 top covering bias conductive layer 102 of bias conductive layer, and consistent with the shape of bias conductive layer；And first
The wire laying mode of transparency conducting layer 103 is also consistent with the wire laying mode of bias conductive layer 102, can be by first in practical operation
The circuit cloth of transparency conducting layer 103 is in the top of bias conductive layer 102.It is had the beneficial effect that using what the embodiment was obtained：
First transparency conducting layer 103 is shaped to and first transparency conducting layer consistent with the shape of bias conductive layer 102
103 wire laying mode is also consistent with the wire laying mode of bias conductive layer 102, in this way, the first transparency conducting layer 103 can not only incite somebody to action
Electrostatic export is generated on the first transparency conducting layer 103, and be can avoid the first transparency conducting layer 103 and stopped imaging unit 101
On light, influence imaging effect, and then influence Effect on Detecting.
For the utility model embodiment, the first transparency conducting layer 103 can be directly grounded.Or it can be in imaging unit
101 peripheries are arranged the second antistatic backing, which is mainly used for conducting generates on the first transparency conducting layer 103
Electrostatic；Specifically, the second antistatic backing connect and is grounded with the first transparency conducting layer 103, in this way, in the first transparency conducting layer
The electrostatic generated on 103 can be oriented to the earth by the first transparency conducting layer 103 and the second antistatic backing.
As shown in figure 3, in a preferred embodiment, the first antistatic backing that the utility model embodiment provides
103 further include：Transparent being led with the second of 103 phase insulation set of the first transparency conducting layer on the first transparency conducting layer 103
Electric layer 105；Specifically, the second transparency conducting layer 105 is located at 103 the first transparency conducting layer of top covering of the first transparency conducting layer
103.In one embodiment, as shown in figure 4, the second transparency conducting layer 105 is connected with the first transparency conducting layer 103, and the
One transparency conducting layer 103 and the second transparency conducting layer 105 are grounded.
In another embodiment, flat panel detector provided by the utility model further includes：It is set to imaging unit 101
The third antistatic backing on periphery, the third antistatic backing connect with the first transparency conducting layer 103 and the second transparency conducting layer 105 and
Ground connection, the first transparency conducting layer 103 are connected with the second transparency conducting layer 105.
For above two embodiment, if the electrostatic generated on the second transparency conducting layer 105 is not oriented to completely
Greatly, be connected with the first transparency conducting layer 103 due to the second transparency conducting layer 105, then it is remaining on the second transparency conducting layer 105
Electrostatic can be oriented to the first transparency conducting layer 103, and be oriented to the earth again by the first transparency conducting layer 103, i.e.,：Further
Electrostatic is prevented to be oriented to the probability of imaging unit 101.In practical applications, it is attached X-ray on the second transparency conducting layer 105
It, can be transparent by first by the electrostatic generated on the second transparency conducting layer 105 during attaching when being converted into the film of visible light
Conductive layer 103 and the third antistatic backing are oriented to the earth.
The above-mentioned connection side about between the first transparency conducting layer 103, the second transparency conducting layer 105 and third antistatic backing
Formula, the explanation being also only exemplary.In practical applications, the first transparency conducting layer 103, second can be designed according to actual conditions thoroughly
Connection type between bright conductive layer 105, as long as ensureing that the electrostatic generated on the second transparency conducting layer 105 can be by first thoroughly
Bright conductive layer 103 and the second transparency conducting layer 105 export, and the utility model embodiment is to this without limiting.
As shown in figure 3, the flat panel detector that the utility model embodiment provides further includes：Second insulating layer 106, second absolutely
Edge layer 106 covers the first transparency conducting layer 103；Second transparency conducting layer 105 is located in second insulating layer 106.Here first
Second insulating layer 106 is set between transparency conducting layer 103 and the second transparency conducting layer 105, is similarly first transparent for preventing
It short cut with each other between conductive layer 103 and the second transparency conducting layer 105 and bring harmful effect.
Preferably, above-mentioned second transparency conducting layer 105 is consistent with the shape of the first transparency conducting layer 103, and second is transparent
The wire laying mode of conductive layer 105 is also also consistent with the wire laying mode of the first transparency conducting layer 103.Specifically, the first electrically conducting transparent
103, the shape one of second transparency conducting layer 105 and first transparency conducting layer 103 consistent with the shape of bias conductive layer 102 of layer
It causes.In this way, the first transparency conducting layer 103 and the second transparency conducting layer 105 not only can be by the static guidings on 101 surface of imaging unit
The problem of going out, and can avoid the light on this two layers of conductive film blocking imaging unit 101, influence imaging effect, and then influence
Effect on Detecting.
Above-mentioned in tablet tester, bilayer conductive film (the first transparency conducting layer is provided on bias conductive layer 102
103 and second transparency conducting layer 105), which can be oriented to the electrostatic generated when preparing flat panel detector
Greatly, the antistatic effect of flat panel detector is further increased.
In practical applications, in the case where ensureing tablet tester Rational Thickness range, multilayer conductive film knot can be set
Structure so that the electrostatic generated when preparing tablet tester is oriented to the earth as fully as possible, further reduced electrostatic guiding
The probability of imaging unit 101.
Specifically, the first transparency conducting layer 103 in the utility model embodiment and the second transparency conducting layer 105 are netted
Tin indium oxide (Indium tin oxide, ITO) or indium zinc oxide (Indium zinc oxide, IZO) film.
In a preferred embodiment, for the flat-panel detector structure (as shown in Figure 3) of bilayer conductive film, first
The thickness of transparency conducting layer 103 is 300~700 nanometers, and the thickness of the second transparency conducting layer 105 is 300~700 nanometers；It is preferred that
The thickness on ground, the first transparency conducting layer 103 is 500 nanometers, and the thickness of the second transparency conducting layer 105 is 500 nanometers.In another kind
In preferred embodiment, for the flat-panel detector structure (as shown in Figure 1) of single layer of conductive film, the first transparency conducting layer 103
Thickness be 300~700 nanometers；Preferably, the thickness of the first transparency conducting layer 103 is 500 nanometers.
In practical applications, specifically more by this as shown in figure 5, a flat panel detector is multiple prime number unit compositions
A pixel unit group pixel arrays, i.e.,：Fig. 1 and Fig. 3 is the corresponding structure of a pixel unit.Specifically, for this reality
With new embodiment, the bias between two neighboring pixel unit in flat panel detector in pel array in each row/column is led
Electric layer 102 is connected, the first transparency conducting layer 103 between two neighboring pixel unit is connected and two neighboring pixel unit
Between the second transparency conducting layer 104 be connected.Fig. 1 and flat-panel detector structure shown in Fig. 3 include specifically TFT (Thin
Film Transistor, thin film transistor (TFT)) structure and imaging unit 101, wherein TFT includes：Substrate 107, grid 108,
Gate insulating layer 109, active layer 110, first electrode layer 111 (source electrode, drain electrode)；Imaging unit 101 includes ITO lids 1011.
In addition, the structure of the flat panel detector further includes having third insulating layer 112, the second electrode lay 113 (source electrode, drain electrode), the 4th absolutely
Edge layer 114 and the 5th insulating layer 115.
In the utility model embodiment, the 5th insulating layer 115 can be resin layer, and there is resin layer itself insulation to imitate
Fruit, and since the material of resin layer is more soft, good shockproof effect can be played.For Fig. 1 or Fig. 3, if bias is led
Electric layer 102 use metal layer, binding force of the metal layer directly between resin layer is weaker, at this moment, can bias conductive layer 102 with
Increase by the 6th insulating layer 116 between 5th insulating layer 115, the 6th insulating layer 116 can also be silicon nitride, pass through the 6th insulating layer
Effect is attached between 116 raising bias conductive layers 102 and the 5th insulating layer 115 (metal layer and resin layer).Moreover, if bias
Conductive layer 102 is connected by jumping pore structure with imaging unit 101, and the stability for jumping pore structure is poor, directly the tree with softness
Lipid layer contacts, it is easy to cause bias conduction fault rupture, therefore, increase between bias conductive layer 102 and the 5th insulating layer 115
6th insulating layer 116 is used to support bias conductive layer 102, i.e.,：Play the effect for preventing bias conductive layer 102 to be broken.
It should be noted that：Fig. 1 and Fig. 3 is intended merely to clearly demonstrate the utility model embodiment, and is detected to tablet
The exemplary illustration that the structure of device carries out.In practical applications, user can designed, designed flat panel detector according to demand structure,
But as long as be on based on the film layer structure on flat panel detector by be arranged conductive film (including：One layer of conductive film, bilayer are led
Electrolemma or multilayer conductive film), to realize the technical solution for the anti-static function for improving flat panel detector, in the utility model
Within protection domain.
The above is only some embodiments of the utility model, it is noted that for the common skill of the art
For art personnel, without departing from the principle of this utility model, several improvements and modifications can also be made, these improve and
Retouching also should be regarded as the scope of protection of the utility model.
Claims (7)
1. a kind of flat panel detector of indirect type, including：
Imaging unit, the bias conductive layer on the imaging unit for providing bias voltage；It is characterized in that, also wrapping
It includes：
The first antistatic backing on the bias conductive layer, first antistatic backing by the first insulating layer with it is described partially
Pressure conductive layer mutually insulate, and first antistatic backing includes the first transparency conducting layer.
2. flat panel detector according to claim 1, which is characterized in that first transparency conducting layer is located at the bias
The bias conductive layer is covered above conductive layer, and consistent with the shape of bias conductive layer.
3. flat panel detector according to claim 1, which is characterized in that the first transparency conducting layer ground connection；Or
Further include：It is set to second antistatic backing on imaging unit periphery, second antistatic backing and first electrically conducting transparent
Layer connection and ground connection.
4. flat panel detector according to claim 1, which is characterized in that first antistatic backing further includes positioned at described
The second transparency conducting layer with the first transparency conducting layer phase insulation set on first transparency conducting layer；
First transparency conducting layer is connected with second transparency conducting layer, and first transparency conducting layer and described second
Transparency conducting layer is grounded；Alternatively, the flat panel detector further includes：It is set to the third antistatic backing on imaging unit periphery,
The third antistatic backing connect and is grounded with first transparency conducting layer and second transparency conducting layer, and described first is transparent
Conductive layer is connected with second transparency conducting layer.
5. flat panel detector according to claim 4, which is characterized in that second transparency conducting layer is located at described first
First transparency conducting layer, and second transparency conducting layer and first transparency conducting layer are covered above transparency conducting layer
Shape it is consistent.
6. flat panel detector according to claim 5, which is characterized in that first transparency conducting layer transparent is led with second
Electric layer is netted tin indium oxide or indium zinc oxide film.
7. flat panel detector according to claim 6, which is characterized in that the thickness of first transparency conducting layer is 300
~700 nanometers, the thickness of second transparency conducting layer is 300~700 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820596658.7U CN208077623U (en) | 2018-04-24 | 2018-04-24 | The flat panel detector of indirect type |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820596658.7U CN208077623U (en) | 2018-04-24 | 2018-04-24 | The flat panel detector of indirect type |
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| Publication Number | Publication Date |
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| CN208077623U true CN208077623U (en) | 2018-11-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389643A (en) * | 2018-04-24 | 2018-08-10 | 京东方科技集团股份有限公司 | The flat panel detector and production method of indirect type |
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2018
- 2018-04-24 CN CN201820596658.7U patent/CN208077623U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389643A (en) * | 2018-04-24 | 2018-08-10 | 京东方科技集团股份有限公司 | The flat panel detector and production method of indirect type |
| CN108389643B (en) * | 2018-04-24 | 2023-10-24 | 京东方科技集团股份有限公司 | Indirect flat panel detector and manufacturing method thereof |
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Effective date of registration: 20190805 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Co-patentee after: Beijing Jingdong Sensing Technology Co., Ltd. Patentee after: BOE Technology Group Co., Ltd. Address before: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Co-patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Patentee before: BOE Technology Group Co., Ltd. |