CN208066372U - A kind of porous boron-doped diamond electrode - Google Patents

A kind of porous boron-doped diamond electrode Download PDF

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CN208066372U
CN208066372U CN201721798227.0U CN201721798227U CN208066372U CN 208066372 U CN208066372 U CN 208066372U CN 201721798227 U CN201721798227 U CN 201721798227U CN 208066372 U CN208066372 U CN 208066372U
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doped diamond
boron
film layer
diamond electrode
porous
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唐永炳
谷继腾
杨扬
李子豪
张文军
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Shenzhen Institute of Advanced Technology of CAS
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Shenzhen Institute of Advanced Technology of CAS
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Abstract

The utility model provides a kind of porous boron-doped diamond electrode, including reticulated matrix, is set to the boron-doped diamond film layer on the one or both sides surface of the reticulated matrix, and is grown on more titania nanotubes of the boron-doped diamond film layer surface.The porous boron-doped diamond electrode has larger visible light receiving area, high to the utilization ratio of light source;Itself internal resistance with very little, reduces the consumption of electric current during photoelectrocatalysis;Containing multiple P-N hetero-junctions, greatly reduce between free electron and hole in conjunction with possibility, have high photoelectrocatalysis efficiency;Have oxygen evolution potential and multiple active sites, there is very strong catalytic activity.

Description

A kind of porous boron-doped diamond electrode
Technical field
The utility model is related to electrocatalysis material technical fields, and in particular to a kind of porous boron-doped diamond electrode.
Background technology
Energy problem is one of the Tough questions that the mankind are facing, and the photoelectricity that can make full use of nature light energy is urged Change material important in inhibiting on solving energy problem, and the emphasis by domestic and foreign scholars as research always.
Currently, most of photocatalyst materials only have absorption to ultraviolet light, and UV energy only connects in natural light Closely occupy 4%, therefore, develops and be of great significance to visible light-responded good photocatalyst material.Titanium dioxide (TiO2) Material is typical n-type semiconductor, and energy gap is about 3.2V, under illumination condition, the electrons gain energy of valence band, and guide Band transition, conduction band have free electron generation, show the chemical property of semiconductor, therefore it is often by as electrode material Applied in photocatalytic process.However TiO is found in use2Quantum efficiency is extremely low, and photocatalysis is very weak, mainly Due to load during the motion in conjunction with caused by.Even if in the case of energization, irradiation TiO is used up2Electrode surface, Catalytic efficiency also only improves 30-40%, although the presence of electric field, accelerates the migration rate of load, loading movement process In in conjunction with the problem of do not obtain substantive solution but.Research shows that in TiO2Process is used as photoelectrocatalysimaterial material In, it is one of the effective way for improving photoelectrocatalysis efficiency that carrier with different charge is taken in efficient separation.
Boron-doped diamond (BDD) is a kind of novel p-type semiconductor material, steady by its good electric conductivity, electrochemistry It is qualitative and anticorrosive etc. to have obtained extensive research.However there is electric anodic oxidation skills in actual application for BDD electrodes Art itself is difficult to the problem of low catalytic efficiency overcome and high energy consumption.
Therefore, it is necessary to which nature light energy can be made full use of by providing one kind, there is high photoelectrocatalysis to couple synergistic effect, Efficient photoelectrocatalysis effect, the electrode material of low resistance energy consumption.
Utility model content
In view of this, the utility model provides a kind of porous boron-doped diamond electrode, natural light can make full use of There is energy high photoelectrocatalysis to couple synergistic effect, efficient photoelectrocatalysis effect, the electrode material of low resistance energy consumption.
The utility model provides a kind of porous boron-doped diamond electrode, including reticulated matrix, is set to the netted base The boron-doped diamond film layer on the one or both sides surface of body, and it is arranged in more of the boron-doped diamond film layer surface Titania nanotube.
Optionally, the titania nanotube vertical arrangement is in the boron-doped diamond film layer surface, the dioxy The gross area occupation rate for changing titanium nanotube is 60-80%.The gross area occupation rate of the titania nanotube is 60- 80%, refer to that the 60-80% of one side surface area of boron-doped diamond film layer is occupied by titania nanotube, or is understood In the distribution area of the boron-doped diamond film layer surface it is the boron-doped diamond film at the titania nanotube The 60-80% of one side surface area of layer.
Optionally, the titania nanotube is random or regular vertical is arranged in the boron-doped diamond film layer table Face.
Porous boron-doped diamond electrode surface described in the utility model is placed with TiO2Nanotube, due to TiO2Nanotube Structure has prodigious specific surface area, and therefore, which has larger visible light receiving area, improves Absorption to visible light;And when illumination is incident upon the TiO of porous boron-doped diamond electrode surface2In the tubular structure of nanotube When portion, the enhancing of beam divergence effect improves utilization ratio of the porous boron-doped diamond electrode to light source.
Optionally, a diameter of 300-600nm of the titania nanotube.Preferably, the titania nanotube A diameter of 300-500nm.Further, it is highly preferred that a diameter of 350-500nm of the titania nanotube.
Optionally, the length of the titania nanotube is 150-850nm.Preferably, the titania nanotube Length be 200-800nm.Further, it is highly preferred that the length of the titania nanotube is 500-750nm.
Optionally, the mesh of the reticulated matrix is 5-15 mesh.
Optionally, the material of the reticulated matrix includes one or more in titanium, niobium, tantalum and tungsten.
Porous boron-doped diamond electrode described in the utility model, as a result of the netted base with excellent conductive characteristic Body, compared to planar structure, porous boron-doped diamond electrode described in the utility model reduces itself internal resistance as far as possible, reduces The consumption of electric current during photoelectrocatalysis;In addition, porous network structure, also promotes mass transport process to a certain extent.With It is existing compared to boron-doped diamond electrode, porous boron-doped diamond electrode described in the utility model has broader potential windows Mouth, higher oxygen evolution potential characteristic and smaller background current.
Wherein, the porous boron-doped diamond electrode can be equipped with the boron-doped diamond film layer and institute successively with both sides State titania nanotube;Meanwhile the thickness size of the boron-doped diamond film layer of both sides can be identical, it can not also Together, the titania nanotube of both sides can be identical in the gross area occupation rate of the boron-doped diamond film layer, also may be used With difference.
Optionally, the thickness of the boron-doped diamond film layer is 1-4 μm.
Porous boron-doped diamond electrode described in the utility model is a kind of mesh structural porous electrode material, the porous boron-doping gold The TiO of hard rock electrode surface arrangement2Nanotube has larger contact area with its boron-doped diamond film layer, and with single TiO2Nanotube is basic unit, forms multiple P-N hetero-junctions, greatly reduce between free electron and hole in conjunction with can Energy property, improves the photoelectrocatalysis efficiency of electrode.
Although the boron-doped diamond film layer surface of porous boron-doped diamond electrode described in the utility model is covered with more TiO2Nanotube, but due to being TiO2Boron-doped diamond film is not isolated from the outside world by the tubular structure of nanotube completely, Most boron-doped diamond film is also retained on the contrary directly to contact with the external world, therefore, porous boron-doping described in the utility model The oxygen evolution potential characteristic and wide electrochemical potential window that the boron-doped diamond film of diamond electrode has always exist, while TiO2 The electrochemical reaction that is added to of nanotube provides more active sites, therefore, the porous boron-doped diamond electrode It can be carried out at the same time photocatalysis and electrochemical catalysis, there is high photoelectrocatalysis to couple synergistic effect, lived with more very strong catalysis Property.
Porous boron-doped diamond electrode provided by the utility model includes reticulated matrix, and in the side on its surface or two The boron-doped diamond film layer and more TiO2 nanotubes that side is equipped with successively, the porous boron-doped diamond electrode have larger It can be seen that light receiving area, high to the utilization ratio of light source;Itself internal resistance with very little, reduces electric current during photoelectrocatalysis Consumption;Containing multiple P-N hetero-junctions, greatly reduce between free electron and hole in conjunction with possibility, have it is high Photoelectrocatalysis efficiency;Have oxygen evolution potential characteristic and multiple active sites, there is stronger catalytic activity.
The preparation method for the porous boron-doped diamond electrode that the utility model second aspect provides is simple for process easy to operate, at The porous boron-doped diamond electrode that this is low, easily realizes industrialization production, while being prepared is by boron-doped diamond and titanium dioxide Nanotube forms a complete entirety, has multiple P-N hetero-junctions, can make full use of nature light energy, has high photoelectricity Catalysis coupling synergistic effect, efficient photoelectrocatalysis effect.
The utility model third aspect additionally provides a kind of porous boron-doping gold comprising described in the utility model first aspect Application of the hard rock electrode in terms of photoelectrocatalysis.Porous boron-doped diamond electrode described in the utility model has efficient photoelectrochemical Catalytic efficiency and higher photoelectric coupling synergistic effect are learned, can be used for industrial organic waste water processing, and in photoelectrocatalysis field In application, such as photoelectron, the energy.
Description of the drawings
Fig. 1 is the structural schematic diagram for the porous boron-doped diamond electrode that one embodiment of the utility model provides;
Fig. 2 is the side schematic view for the porous boron-doped diamond electrode that one embodiment of the utility model provides;
Fig. 3 is the structural schematic diagram for the porous boron-doped diamond electrode that another embodiment of the utility model provides.
Specific implementation mode
As described below is the preferred embodiment of the utility model embodiment, it is noted that for the general of the art For logical technical staff, under the premise of not departing from the utility model embodiment principle, several improvements and modifications can also be made, These improvements and modifications are also considered as the protection domain of the utility model embodiment.
Divide multiple embodiments that the utility model embodiment is further detailed below.Wherein, the utility model is real It applies example and is not limited to specific embodiment below.In the range of constant principal right, implementation appropriate can be changed.
Unless otherwise noted, raw material used by the utility model embodiment and other chemical reagent are all commercial goods.
Embodiment 1
A kind of preparation method of porous boron-doped diamond electrode, including:
(1) ti-alloy mesh is provided, blasting treatment is carried out to the ti-alloy mesh, sand grains are silicon carbide (SiC) particle, Until the ti-alloy mesh surface stops after there is uniform dark gray, it is placed in 0.5mol/L hydrochloric acid solutions and surpasses after washing Ti-alloy mesh is taken out in sonication 30 minutes, and it is 1 to immerse ti-alloy mesh by volume ratio after deionization is washed:10:10 sulphur 5 minutes in the mixed acid solution of acid, hydrogen peroxide and deionized water composition, is then cleaned up through deionized water and be placed on nanogold It is ultrasonically treated 1 hour in emery suspension, then takes out ti-alloy mesh and dried up with nitrogen, be put in drying box and preserve, institute The average grain diameter for stating bortz powder suspension is 5nm, and Zeta potential is ± 50mV, the mixed acid solution.
(2) ti-alloy mesh obtained through step (1) is placed in hot-wire chemical gas-phase deposition system, is evacuated to 0.1Pa Afterwards, be passed through mixed gas, adjusting energized power is 6500W, sedimentation time 8h, the mixed gas include hydrogen, methane and Trimethyl borine, adjusting gas pressure intensity are 4000Pa, and the gas flow of the hydrogen is 950sccm, the gas stream of the methane 25sccm is measured, the gas flow of the trimethyl borine is 20sccm, and obtaining a side surface has boron-doped diamond film layer Ti-alloy mesh.
(3) there is the ti-alloy mesh of boron-doped diamond film layer to be placed in 1h in chloroazotic acid surface, after washing totally, is passed through Nitrogen dries up, and is placed in reaction solution and reacts, reaction time 18h, and reaction temperature is 120 DEG C, and the reaction solution is by volume Than being 1:30:30 be that four fourth fat of metatitanic acid, hydrochloric acid and deionized water are prepared, and it is 1 that volume ratio is dipped to after the completion of reaction:1 Deionized water and hydrochloric acid mixed solution in, soaking time 13 hours, soaking temperature be 120 DEG C, it is most clear through deionized water afterwards It is dried after clean, obtains the boron-doped diamond film layer being equipped with successively in a side surface of ti-alloy mesh and more TiO2It receives The porous boron-doped diamond electrode of mitron.
As shown in Figure 1, according to porous boron-doped diamond electrode 100 made from the preparation method of the offer of the present embodiment 1, packet Ti-alloy mesh 101 is included, the boron-doped diamond film layer 102 of a side surface of the ti-alloy mesh 101 is set to, and is arranged in The more titania nanotubes 103 on 102 surface of boron-doped diamond film layer.Wherein, Fig. 2 is the porous boron-doping gold The side schematic view of hard rock electrode 100.The titania nanotube 103 is arranged in far from the described of the ti-alloy mesh 101 One side surface of boron-doped diamond film layer 102.The boron-doped diamond film layer 102 is closely coated on the ti-alloy mesh 101 side surface.Further, the boron-doped diamond film layer 102 can also be coated on the every of the ti-alloy mesh 101 The inner surface of a mesh and the whole edge of ti-alloy mesh 101.
Titania nanotube 103 described in described the present embodiment is that random vertical is arranged in the boron-doped diamond film The gross area occupation rate on 102 surface of layer, the titania nanotube 103 is 60%, the diameter of the titania nanotube Mesh number for 350-400nm, length 500-700nm, the ti-alloy mesh is 5, the thickness of the boron-doped diamond film layer It is 4 μm.
Embodiment 2
A kind of preparation method of porous boron-doped diamond electrode, including:
(1) ti-alloy mesh is provided, blasting treatment is carried out to the ti-alloy mesh, sand grains are silicon carbide (SiC) Grain is placed in until the ti-alloy mesh surface stops after there is uniform dark gray in 0.5mol/L hydrochloric acid solutions after washing It is ultrasonically treated 30 minutes, takes out ti-alloy mesh, it is 1 to immerse ti-alloy mesh by volume ratio after deionization is washed:10:10 sulphur 5 minutes in the mixed acid solution of acid, hydrogen peroxide and deionized water composition, is then cleaned up through deionized water and be placed on nanogold It is ultrasonically treated 1 hour in emery suspension, then takes out ti-alloy mesh and dried up with nitrogen, be put in drying box and preserve, institute The average grain diameter for stating bortz powder suspension is 5nm, and Zeta potential is ± 50mV, the mixed acid solution.
(2) ti-alloy mesh obtained through step (1) is placed in hot-wire chemical gas-phase deposition system, uses tantalum wire as heat Silk, a diameter of 0.5mm, total quantity 9;It is heated using bipolar electrode frame structure, tantalum wire is 5 according to number of poles is powered on, lower number of electrodes Amount is arranged for 4 parallel mode, and distance is 80mm between upper/lower electrode, between tantalum wire is also parallel arrangement, silk on same electrode Spacing is 28mm;Before electrode is powered, between the ti-alloy mesh is placed on two electrodes with special branch, the upper table of ti-alloy mesh Identity distance is 35mm apart from lower electrode from extremely 45mm, lower surface is powered on;After being evacuated to 0.1Pa, it is passed through mixed gas, is adjusted logical Electrical power is 6500W, and sedimentation time 8h, the mixed gas includes hydrogen, methane and trimethyl borine, adjusts gas pressure It is 4000Pa by force, the gas flow of the hydrogen is 950sccm, the gas flow 25sccm of the methane, the trimethyl borine The gas flow of alkane is 20sccm, and obtaining a side surface has the ti-alloy mesh of boron-doped diamond film layer.
(3) there is the ti-alloy mesh of boron-doped diamond film layer to be placed in 1h in chloroazotic acid surface, after washing totally, is passed through Nitrogen dries up, and is placed in reaction solution and reacts, reaction time 18h, and reaction temperature is 120 DEG C, and the reaction solution is by volume Than being 1:30:30 be that four fourth fat of metatitanic acid, hydrochloric acid and deionized water are prepared, and it is 1 that volume ratio is dipped to after the completion of reaction:1 Deionized water and hydrochloric acid mixed solution in, soaking time 13 hours, soaking temperature be 120 DEG C, it is most clear through deionized water afterwards It is dried after clean, obtains the boron-doped diamond film layer being equipped with successively in the both side surface up and down of metal niobium net and more TiO2The porous boron-doped diamond electrode of nanotube.
As shown in figure 3, according to porous boron-doped diamond electrode 200 made from the preparation method of the offer of the present embodiment 2, Including ti-alloy mesh 201, it is set to the boron-doped diamond film layer 202 of the both side surface of the ti-alloy mesh 201, and arrangement The more titania nanotubes 203 on 202 surface of boron-doped diamond film layer.203 row of the titania nanotube Cloth is in a side surface of the boron-doped diamond film layer 202 far from the ti-alloy mesh 201.The boron-doped diamond is thin Film layer 202 is closely coated on the both side surface up and down of the ti-alloy mesh 201.Further, the boron-doped diamond film Layer 202 is coated on the inner surface of each mesh of the ti-alloy mesh 201 and the whole edge of ti-alloy mesh 201.
The mesh number of ti-alloy mesh 201 described in the present embodiment be 10, the titania nanotube 203 be with Boron-doped diamond film layer 202 surface of the machine vertical arrangement in the both sides of the porous boron-doped diamond electrode 200;Wherein, institute The gross area occupation rate for stating the titania nanotube 203 of the side of porous boron-doped diamond electrode 200 is respectively 75%, boron-doping The thickness of diamond film layer 202 is 2.5 μm;The nano titania of the other side of the porous boron-doped diamond electrode 200 The gross area occupation rate of pipe 203 is respectively 70%, and the thickness of boron-doped diamond film layer 202 is 3.0 μm, and the titanium dioxide is received A diameter of 300-450nm of mitron, length 500-800nm.
Embodiment 3
A kind of preparation method of porous boron-doped diamond electrode, including:
(1) metal niobium net is provided, blasting treatment is carried out to the metal niobium net, sand grains are silicon carbide (SiC) Grain is placed in until the metal niobium net surface stops after there is uniform dark gray in 0.5mol/L hydrochloric acid solutions after washing It is ultrasonically treated 30 minutes, takes out metal niobium net, it is 1 to immerse metal niobium net by volume ratio after deionization is washed:15:15 sulphur 3 minutes in the mixed acid solution of acid, hydrogen peroxide and deionized water composition, is then cleaned up through deionized water and be placed on nanogold It is ultrasonically treated 1.5 hours in emery suspension, then takes out metal niobium net and dried up with nitrogen, be put in drying box and preserve, The average grain diameter of the bortz powder suspension is 8nm, and Zeta potential is ± 55mV, the mixed acid solution.
(2) the metal niobium net obtained through step (1) is placed in hot-wire chemical gas-phase deposition system, is evacuated to 0.1Pa Afterwards, be passed through mixed gas, adjusting energized power is 9000W, sedimentation time 4h, the mixed gas include hydrogen, methane and Trimethyl borine, adjusting gas pressure intensity are 4500Pa, and the gas flow of the hydrogen is 1000sccm, the gas stream of the methane 32sccm is measured, the gas flow of the trimethyl borine is 6sccm, and obtaining a side surface has the gold of boron-doped diamond film layer Belong to niobium net.
(3) there is the metal niobium net of boron-doped diamond film layer to be placed in 1h in chloroazotic acid surface, after washing totally, is passed through Nitrogen dries up, and is placed in reaction solution and reacts, reaction time 20h, and reaction temperature is 150 DEG C, and the reaction solution is by volume Than being 1:40:40 be that four fourth fat of metatitanic acid, hydrochloric acid and deionized water are prepared, and it is 1 that volume ratio is dipped to after the completion of reaction: In 1.5 deionized water and the mixed solution of hydrochloric acid, soaking time 10 hours, soaking temperature is 150 DEG C, most afterwards through deionization The clear clean rear drying process of water, obtains the boron-doped diamond film layer being equipped with successively in a side surface of metal niobium net and more TiO2The porous boron-doped diamond electrode of nanotube.
Embodiment 4
A kind of preparation method of porous boron-doped diamond electrode, including:
(1) metal tantalum net is provided, blasting treatment is carried out to the metal tantalum net, sand grains are silicon carbide (SiC) Grain is placed in until the metal tantalum net surface stops after there is uniform dark gray in 0.7mol/L hydrochloric acid solutions after washing It is ultrasonically treated 30 minutes, takes out metal tantalum net, it is 1 to immerse metal tantalum net by volume ratio after deionization is washed:5:5 sulphur 10 minutes in the mixed acid solution of acid, hydrogen peroxide and deionized water composition, is then cleaned up through deionized water and be placed on nanogold It is ultrasonically treated 0.5 hour in emery suspension, then takes out metal tantalum net and dried up with nitrogen, be put in drying box and preserve, The average grain diameter of the bortz powder suspension is 3nm, and Zeta potential is ± 45mV, the mixed acid solution.
(2) the metal tantalum net obtained through step (1) is placed in hot-wire chemical gas-phase deposition system, is evacuated to 0.1Pa Afterwards, be passed through mixed gas, adjusting energized power is 6500W, sedimentation time 8h, the mixed gas include hydrogen, methane and Trimethyl borine, adjusting gas pressure intensity are 3500Pa, and the gas flow of the hydrogen is 800sccm, the gas stream of the methane 12sccm is measured, the gas flow of the trimethyl borine is 24sccm, and obtaining a side surface has boron-doped diamond film layer Metal tantalum net.
(3) there is the metal tantalum net of boron-doped diamond film layer to be placed in 1h in chloroazotic acid surface, after washing totally, is passed through Nitrogen dries up, and is placed in reaction solution and reacts, reaction time 20h, and reaction temperature is 100 DEG C, and the reaction solution is by volume Than being 1:20:20 be that four fourth fat of metatitanic acid, hydrochloric acid and deionized water are prepared, and it is 1 that volume ratio is dipped to after the completion of reaction: In 0.5 deionized water and the mixed solution of hydrochloric acid, soaking time 15 hours, soaking temperature 100, most afterwards through deionized water Clear clean rear drying process, obtains the boron-doped diamond film layer being equipped with successively in a side surface of metal tantalum net and more TiO2 The porous boron-doped diamond electrode of nanotube.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed, But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to In the scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.

Claims (10)

1. a kind of porous boron-doped diamond electrode, which is characterized in that including reticulated matrix, be set to the side of the reticulated matrix Or the boron-doped diamond film layer of both side surface, and it is arranged in more titanium dioxide of the boron-doped diamond film layer surface Nanotube.
2. porous boron-doped diamond electrode as described in claim 1, which is characterized in that the titania nanotube vertical row For cloth in the boron-doped diamond film layer surface, the gross area occupation rate of the titania nanotube is 60-80%.
3. porous boron-doped diamond electrode as claimed in claim 2, which is characterized in that the titania nanotube it is random or Regular vertical is arranged in the boron-doped diamond film layer surface.
4. porous boron-doped diamond electrode as described in claim 1, which is characterized in that the diameter of the titania nanotube For 300-600nm.
5. porous boron-doped diamond electrode as described in claim 1 or 4, which is characterized in that the titania nanotube A diameter of 350-500nm.
6. porous boron-doped diamond electrode as described in claim 1, which is characterized in that the length of the titania nanotube For 150-850nm.
7. porous boron-doped diamond electrode as described in claim 1 or 6, which is characterized in that the titania nanotube Length is 200-800nm.
8. porous boron-doped diamond electrode as described in claim 1, which is characterized in that the mesh of the reticulated matrix is 5-15 Mesh.
9. porous boron-doped diamond electrode as described in claim 1, which is characterized in that the material of the reticulated matrix includes Titanium, niobium, tantalum or tungsten.
10. porous boron-doped diamond electrode as described in claim 1, which is characterized in that the boron-doped diamond film layer Thickness is 1-4 μm.
CN201721798227.0U 2017-12-20 2017-12-20 A kind of porous boron-doped diamond electrode Active CN208066372U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112899643A (en) * 2021-01-19 2021-06-04 山东欣远新材料科技有限公司 Preparation method of boron-doped diamond film electrode substrate
CN113463127A (en) * 2021-06-21 2021-10-01 深圳技术大学 Diamond-based photoelectrocatalysis electrode, preparation method thereof and photoelectrocatalysis device
JP7466582B2 (en) 2022-02-14 2024-04-12 本田技研工業株式会社 Water electrolysis device and method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112899643A (en) * 2021-01-19 2021-06-04 山东欣远新材料科技有限公司 Preparation method of boron-doped diamond film electrode substrate
CN112899643B (en) * 2021-01-19 2022-09-09 山东欣远新材料科技有限公司 Preparation method of boron-doped diamond film electrode substrate
CN113463127A (en) * 2021-06-21 2021-10-01 深圳技术大学 Diamond-based photoelectrocatalysis electrode, preparation method thereof and photoelectrocatalysis device
CN113463127B (en) * 2021-06-21 2022-06-10 深圳技术大学 Diamond-based photoelectrocatalysis electrode, preparation method thereof and photoelectrocatalysis device
JP7466582B2 (en) 2022-02-14 2024-04-12 本田技研工業株式会社 Water electrolysis device and method

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