CN208046314U - A kind of ups power and its translation circuit - Google Patents
A kind of ups power and its translation circuit Download PDFInfo
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- CN208046314U CN208046314U CN201820647924.4U CN201820647924U CN208046314U CN 208046314 U CN208046314 U CN 208046314U CN 201820647924 U CN201820647924 U CN 201820647924U CN 208046314 U CN208046314 U CN 208046314U
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Abstract
This application discloses a kind of ups power and its translation circuits, the circuit includes busbar, double boost circuits and buck circuits, the buck circuits include third inductance, third switching tube and third diode, the cathode of the third diode is connect with positive bus-bar, the anode of the third diode is connect with one end of one end of the third switching tube and the third inductance respectively, the other end of the third switching tube is connect with negative busbar, the cathode of the third diode is connected for connecting anode, the other end of the third inductance for connecting battery cathode；Further include in series arm where the third inductance and the third switching tube：Isolating device, the isolating device are connected when electric current flows to the third switching tube from the third inductance, are turned off when electric current flows to the third inductance from the third switching tube.Technical solution in the application can avoid the internal diode of the switching tube on buck circuits from overcurrent damage event occur.
Description
Technical field
The utility model is related to UPS technical fields, more particularly to a kind of ups power and its translation circuit.
Background technology
In existing efficient ups power, inside would generally be equipped with double boost circuits and buck circuits.But it is existing
Double boost circuits and buck circuits constitute charging circuit in can have abnormal circuit, details can be found in Fig. 1 and Fig. 2, Fig. 1
It is the circuit operating diagram of pre-charging stage, Fig. 2 is the circuit operating diagram of busbar boost phase, wherein in Fig. 1 and Fig. 2
Hachure with big arrow is indicated for circuit working state under the different operating stage in order to it is appreciated that circuit
Auxiliary line is not translation circuit itself.From figure 1 it appears that when circuit is in battery state, it will risen to busbar
Pressure processing, first by buffer resistance R12 into line precharge, during bus precharge, due to depositing for buffer resistance R12
So that the electric current for flowing through diode in charge switch pipe Q12 bodies is smaller, and internal diode at this time is in a safe condition.So
And after bus precharge terminates, slow-operating relay RLY1A will be switched off, and controllable silicon SCR 1 in an ON state, causes at this time
Without buffer resistance in boosting circuit, in this case, and due to afterflow after inductive energy storage so that initial in circuit at this time
Electric current is larger, when the electric current is by the internal diode of charge switch pipe Q12, it is possible to and cause it overcurrent damage occur, this
When BUS- abnormal circuit is formed by diode in Q12 bodies and BAT-.It is shown in Figure 3, when internal the two of charge switch pipe Q12
After pole pipe overcurrent damage, it will form the circuit as shown in the filament meaning with big arrow in Fig. 3 in negative busbar, at this time
Pass through the open-minded of boosted switch pipe Q2 so that the voltage of negative busbar discharges zero setting.
In summary as can be seen that how to avoid the internal diode of busbar boost phase charge switch pipe that overcurrent damage occurs
Bad is current urgent problem to be solved.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of ups power and its translation circuit, can effectively avoid
Overcurrent damage occurs for the internal diode of busbar boost phase charge switch pipe.Its concrete scheme is as follows：
In a first aspect, the utility model discloses a kind of translation circuit, including busbar, double boost circuits and buck circuits；
The busbar includes positive bus-bar, negative busbar, and the first capacitance being connected in series between positive bus-bar and negative busbar and the second electricity
Hold；
Double boost circuits include the first inductance, the second inductance, first switch pipe, second switch pipe, the first diode
It is connect with positive bus-bar with the cathode of the second diode, first diode, anode and the negative busbar of second diode connect
It connects, the first switch pipe and the second switch pipe are connected in series in the anode of first diode and the two or two pole
Between the cathode of pipe, the common end of the first switch pipe and the second switch pipe and first capacitance and second electricity
The common end of appearance connects, and the anode of first diode is connect with one end of first inductance, second diode
Cathode is connect with one end of second inductance, and the other end of first inductance is for connecting anode, second electricity
The other end of sense is connected for connecting battery cathode；
The buck circuits include third inductance, third switching tube and third diode, the cathode of the third diode
Connect with positive bus-bar, the anode of the third diode respectively with one end of the third switching tube and the third inductance one
End connection, the other end of the third switching tube are connect with negative busbar, and the cathode of the third diode is for connecting battery just
The other end of pole, the third inductance is connected for connecting battery cathode；Where the third inductance and the third switching tube
Series arm on further include：
Isolating device, the isolating device are connected when electric current flows to the third switching tube from the third inductance,
Electric current turns off when flowing to the third inductance from the third switching tube.
Optionally, the isolating device is set between the third switching tube and negative busbar or the third switching tube
Between the third inductance or between the third inductance and battery cathode.
Optionally, the isolating device is diode.
Optionally, the isolating device is silicon-controlled.
Optionally, further include between the cathode and positive bus-bar of the third diode：
First switch is connected or disconnected for controlling the buck circuits with busbar.
Optionally, further include between second inductance and battery cathode：
Second switch is connected or disconnected for controlling double boost circuits with battery.
Optionally, the translation circuit further includes start unit, and the start unit includes silicon-controlled, buffer resistance, whole
Stream diode and relay, the second end of first inductance are connect by the silicon-controlled of the start unit with anode,
The buffer resistance, the rectifier diode and the relay after being sequentially connected in series it is whole be connected in parallel to the start unit can
Control the both ends of silicon.
Optionally, the first switch pipe, second switch pipe, third switching tube further include anti-parallel diodes.
Second aspect, the utility model discloses a kind of ups powers, including translation circuit as previously disclosed.
As it can be seen that in the translation circuit of the application, where the switching tube on inductance and buck circuits on buck circuits
Series arm is equipped with isolating device, is connected when electric current flows to the switching tube on buck circuits from the inductance on buck circuits,
It is turned off when electric current flows to the inductance on buck circuits from the switching tube on buck circuits, it is possible thereby to so that, work as translation circuit
When in busbar boost phase, since the current direction in above-mentioned series arm at this time is by the switching tube flow direction on buck circuits
Inductance on buck circuits, so above-mentioned isolating device is off state, so that due to inductance in busbar boost phase
Initial current larger caused by afterflow can not flow into the internal diode of the switching tube on buck circuits after energy storage, thus avoid
There is overcurrent damage event in the internal diode of switching tube on buck circuits.
Description of the drawings
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer.
Fig. 1 is the circuit operating diagram of existing UPS pre-charging stages；
Fig. 2 is the circuit operating diagram of existing UPS busbares boost phase；
Fig. 3 is the circuit operating diagram of existing UPS negative busbars discharge regime；
Fig. 4 is a kind of translation circuit structural schematic diagram disclosed in the utility model embodiment；
Fig. 5 is a kind of specific translation circuit structural schematic diagram disclosed in the utility model embodiment；
Fig. 6 is a kind of specific translation circuit structural schematic diagram disclosed in the utility model embodiment.
Specific implementation mode
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
The every other embodiment obtained, shall fall within the protection scope of the present invention.
The utility model embodiment discloses a kind of translation circuit, shown in Figure 4, which includes busbar, double
Boost circuits and buck circuits；The busbar includes positive bus-bar, negative busbar, and be connected in series in positive bus-bar and negative busbar it
Between the first capacitance C1 and the second capacitance C2；Double boost circuits include the first inductance L1, the second inductance L2, first switch
Cathode and the positive bus-bar company of pipe Q1, second switch pipe Q2, the first diode D1 and the second diode D2, the first diode D1
It connects, the anode of the second diode D2 is connect with negative busbar, the first switch pipe Q1 and second switch pipe Q2 series connection
It is connected between the anode of the first diode D1 and the cathode of the second diode D2, the first switch pipe Q1 and institute
The common end for stating second switch pipe Q2 is connect with the common end of the first capacitance C1 and the second capacitance C2, and the described 1st
The anode of pole pipe D1 is connect with one end of the first inductance L1, the cathode of the second diode D2 and the second inductance L2
One end connection, the other end of the first inductance L1 is for connecting anode, the other end connection of the second inductance L2
For connecting battery cathode；
The buck circuits include third inductance L7, third switching tube Q12 and third diode D46, the three or two pole
The cathode of pipe D46 is connect with positive bus-bar, the anode of third diode D46 one end with the third switching tube Q12 respectively
It is connected with one end of the third inductance L7, the other end of the third switching tube Q12 is connect with negative busbar, the three or two pole
The cathode of pipe D46 is connected for connecting anode, the other end of the third inductance L7 for connecting battery cathode；Also,
Further include in the third inductance and series arm where the third switching tube Q12：
Isolating device S, the isolating device S are when electric current flows to the third switching tube Q12 from the third inductance L7
Conducting, turns off when electric current flows to the third inductance L7 from the third switching tube Q12.
It should be pointed out that above-mentioned isolating device S can be located at the third inductance L7 and third switching tube Q12 institutes
Series arm on any position, specifically, the isolating device S can be set to the third switching tube Q12 and negative
Between busbar or between the third switching tube Q12 and the third inductance L7 or the third inductance L7 and battery cathode it
Between.
In Fig. 4, when circuit is in battery state, it will boosting processing is carried out to busbar, first by buffer resistance R12 into
Line precharge, during bus precharge, due to the presence of buffer resistance R12 so that flow through two in third switching tube Q12 bodies
The electric current of pole pipe is smaller, and internal diode at this time is in a safe condition.When bus precharge terminates to enter busbar boost phase
When, slow-operating relay RLY1A will be switched off, and controllable silicon SCR 1 in an ON state, causes in boosting circuit without buffering at this time
Resistance, and caused due to afterflow after inductive energy storage larger flow to third inductance L7's by third switching tube Q12 at this time
Electric current, but, since the present embodiment increases in the series arm where the third inductance L7 and the third switching tube Q12
Isolating device S, and isolating device S turns off when electric current flows to third inductance L7 from third switching tube Q12 so that at this time
Series arm where the third inductance L7 and third switching tube Q12 is in by partition state, so that busbar liter
Initial current larger caused by afterflow after inductive energy storage can not flow into internal two pole of third switching tube Q12 in the pressure stage
Pipe, thus avoids the internal diode of third switching tube Q12 from overcurrent damage event occur.
In addition, further including three-level inverter circuit in translation circuit in the present embodiment.Wherein, above-mentioned tri-level inversion electricity
Road can be I types or T-type three-level inverter circuit.
Further, shown in Figure 4, further include between the cathode and positive bus-bar of the third diode D46：First opens
K1 is closed, is connected or disconnected with busbar for controlling the buck circuits.
Further, shown in Figure 4, further include between the second inductance L2 and battery cathode：Second switch K2 is used
It is connected or disconnected with battery in controlling double boost circuits.
Further, shown in Figure 4, the translation circuit in the present embodiment further includes start unit, the start unit
Including controllable silicon SCR 1, buffer resistance R12, rectifier diode D41 and relay RLY1A, the second end of the first inductance L1
It is connect with anode by the controllable silicon SCR 1 of the start unit, the buffer resistance R12, the rectifier diode D41
The both ends of the whole controllable silicon SCR 1 for being connected in parallel to the start unit after being sequentially connected in series with the relay RLY1A.
In addition, the first switch pipe Q1, second switch pipe Q2, third switching tube Q12 further include two pole of reverse parallel connection
Pipe.
As it can be seen that in the translation circuit of the application, where the switching tube on inductance and buck circuits on buck circuits
Series arm is equipped with isolating device, is connected when electric current flows to the switching tube on buck circuits from the inductance on buck circuits,
It is turned off when electric current flows to the inductance on buck circuits from the switching tube on buck circuits, it is possible thereby to so that, work as translation circuit
When in busbar boost phase, since the current direction in above-mentioned series arm at this time is by the switching tube flow direction on buck circuits
Inductance on buck circuits, so above-mentioned isolating device is off state, so that due to inductance in busbar boost phase
Initial current larger caused by afterflow can not flow into the internal diode of the switching tube on buck circuits after energy storage, thus avoid
There is overcurrent damage event in the internal diode of switching tube on buck circuits.
On the basis of previous embodiment, the utility model embodiment discloses a kind of specific translation circuit, referring to Fig. 5
Shown, which includes busbar, double boost circuits and buck circuits；The busbar includes positive bus-bar, negative busbar, and
The the first capacitance C1 and the second capacitance C2 being connected in series between positive bus-bar and negative busbar；Double boost circuits include first
Inductance L1, the second inductance L2, first switch pipe Q1, second switch pipe Q2, the first diode D1 and the second diode D2, described
The cathode of one diode D1 is connect with positive bus-bar, and the anode of the second diode D2 is connect with negative busbar, the first switch
The pipe Q1 and second switch pipe Q2 is connected in series in the moon of the anode and the second diode D2 of the first diode D1
Between pole, common end and the first capacitance C1 and second electricity of the first switch pipe Q1 and the second switch pipe Q2
Holding the common end connection of C2, the anode of the first diode D1 is connect with one end of the first inductance L1, and the described 2nd 2
The cathode of pole pipe D2 is connect with one end of the second inductance L2, and the other end of the first inductance L1 is for connecting battery just
The other end of pole, the second inductance L2 is connected for connecting battery cathode；
The buck circuits include third inductance L7, third switching tube Q12 and third diode D46, the three or two pole
The cathode of pipe D46 is connect with positive bus-bar, the anode of third diode D46 one end with the third switching tube Q12 respectively
It is connected with one end of the third inductance L7, the other end of the third switching tube Q12 is connect with negative busbar, the three or two pole
The cathode of pipe D46 is connected for connecting anode, the other end of the third inductance L7 for connecting battery cathode；Also,
Further include in the third inductance and series arm where the third switching tube Q12：
Isolating diode D3, the isolating diode D3 flow to the third switching tube in electric current from the third inductance L7
It is connected when Q12, is turned off when electric current flows to the third inductance L7 from the third switching tube Q12.
That is, in the present embodiment connection modes and charge switch pipe of the above-mentioned isolating diode D3 on buck circuits body
The connection mode of interior diode is opposite.
It should be pointed out that above-mentioned isolating diode D3 can be located at the third inductance L7 and the third switching tube
Any position in series arm where Q12, specifically, the isolating diode D3 can be set to the third switching tube
Between Q12 and negative busbar or between the third switching tube Q12 and the third inductance L7 or the third inductance L7 and electricity
It is specifically to be disposed between third inductance L7 and battery cathode between the cathode of pond, in Fig. 5.
In Fig. 4, when circuit is in battery state, it will boosting processing is carried out to busbar, first by buffer resistance R12 into
Line precharge, during bus precharge, due to the presence of buffer resistance R12 so that flow through two in third switching tube Q12 bodies
The electric current of pole pipe is smaller, and internal diode at this time is in a safe condition.When bus precharge terminates to enter busbar boost phase
When, slow-operating relay RLY1A will be switched off, and controllable silicon SCR 1 in an ON state, causes in boosting circuit without buffering at this time
Resistance, and caused due to afterflow after inductive energy storage larger flow to third inductance L7's by third switching tube Q12 at this time
Electric current, but, since the present embodiment increases in the series arm where the third inductance L7 and the third switching tube Q12
Isolating diode D3, and isolating diode D3 is turned off when electric current flows to third inductance L7 from third switching tube Q12, make
The series arm where the third inductance L7 and third switching tube Q12 at this time is obtained to be in by partition state, so that
Initial current larger caused by afterflow after inductive energy storage can not flow into the body of third switching tube Q12 in busbar boost phase
Thus interior diode avoids the internal diode of third switching tube Q12 from overcurrent damage event occur.
On the basis of previous embodiment, the utility model embodiment discloses a kind of specific translation circuit, referring to Fig. 6
Shown, which includes busbar, double boost circuits and buck circuits；The busbar includes positive bus-bar, negative busbar, and
The the first capacitance C1 and the second capacitance C2 being connected in series between positive bus-bar and negative busbar；Double boost circuits include first
Inductance L1, the second inductance L2, first switch pipe Q1, second switch pipe Q2, the first diode D1 and the second diode D2, described
The cathode of one diode D1 is connect with positive bus-bar, and the anode of the second diode D2 is connect with negative busbar, the first switch
The pipe Q1 and second switch pipe Q2 is connected in series in the moon of the anode and the second diode D2 of the first diode D1
Between pole, common end and the first capacitance C1 and second electricity of the first switch pipe Q1 and the second switch pipe Q2
Holding the common end connection of C2, the anode of the first diode D1 is connect with one end of the first inductance L1, and the described 2nd 2
The cathode of pole pipe D2 is connect with one end of the second inductance L2, and the other end of the first inductance L1 is for connecting battery just
The other end of pole, the second inductance L2 is connected for connecting battery cathode；
The buck circuits include third inductance L7, third switching tube Q12 and third diode D46, the three or two pole
The cathode of pipe D46 is connect with positive bus-bar, the anode of third diode D46 one end with the third switching tube Q12 respectively
It is connected with one end of the third inductance L7, the other end of the third switching tube Q12 is connect with negative busbar, the three or two pole
The cathode of pipe D46 is connected for connecting anode, the other end of the third inductance L7 for connecting battery cathode；Also,
Further include in the third inductance and series arm where the third switching tube Q12：
Controllable silicon SCR 2, the controllable silicon SCR 2 flow to the third switching tube Q12 in electric current from the third inductance L7
When be connected, turned off when electric current flows to the third inductance L7 from the third switching tube Q12.
It should be pointed out that above-mentioned controllable silicon SCR 2 can be located at the third inductance L7 and third switching tube Q12
Any position in the series arm at place, specifically, the controllable silicon SCR 2 can be set to the third switching tube Q12 and
Between negative busbar or between the third switching tube Q12 and the third inductance L7 or the third inductance L7 and battery cathode
Between, it is specifically to be disposed between third inductance L7 and third switching tube Q12 in Fig. 6.
In Fig. 6, when circuit is in battery state, it will boosting processing is carried out to busbar, first by buffer resistance R12 into
Line precharge, during bus precharge, due to the presence of buffer resistance R12 so that flow through two in third switching tube Q12 bodies
The electric current of pole pipe is smaller, and internal diode at this time is in a safe condition.When bus precharge terminates to enter busbar boost phase
When, slow-operating relay RLY1A will be switched off, and controllable silicon SCR 1 in an ON state, causes in boosting circuit without buffering at this time
Resistance, and caused due to afterflow after inductive energy storage larger flow to third inductance L7's by third switching tube Q12 at this time
Electric current, but, since the present embodiment increases in the series arm where the third inductance L7 and the third switching tube Q12
Controllable silicon SCR 2, and the controllable silicon SCR 2 turns off when electric current flows to third inductance L7 from third switching tube Q12 so that this
Series arm where the Shi Suoshu third inductance L7 and third switching tube Q12 is in by partition state, so that busbar
Initial current larger caused by afterflow after inductive energy storage can not flow into internal the two of third switching tube Q12 in boost phase
Thus pole pipe avoids the internal diode of third switching tube Q12 from overcurrent damage event occur.
Further, the invention also discloses a kind of ups powers, including electricity is converted disclosed in previous embodiment
Road.Specific configuration about the translation circuit can refer to corresponding contents disclosed in previous embodiment, no longer go to live in the household of one's in-laws on getting married herein
It states.
The foregoing description of the disclosed embodiments enables those skilled in the art to realize or use the utility model.
Various modifications to these embodiments will be apparent for a person skilled in the art, general original as defined herein
Reason can be realized in other embodiments without departing from the spirit or scope of the present utility model.Therefore, this practicality is new
Type is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase
Consistent widest range.
Claims (9)
1. a kind of translation circuit, including busbar, double boost circuits and buck circuits；The busbar includes positive bus-bar, negative busbar,
And it is connected in series in the first capacitance and the second capacitance between positive bus-bar and negative busbar；
Double boost circuits include the first inductance, the second inductance, first switch pipe, second switch pipe, the first diode and the
The cathode of two diodes, first diode is connect with positive bus-bar, and the anode of second diode is connect with negative busbar, institute
It states first switch pipe and the second switch pipe is connected in series in the anode of first diode and second diode
Between cathode, the common end of the first switch pipe and the second switch pipe and first capacitance and second capacitance
Common end connects, and the anode of first diode is connect with one end of first inductance, the cathode of second diode
It is connect with one end of second inductance, the other end of first inductance is used to connect anode, second inductance
The other end is connected for connecting battery cathode；
The buck circuits include third inductance, third switching tube and third diode, the cathode of the third diode with just
Busbar connects, and the anode of the third diode connects with one end of the third switching tube and one end of the third inductance respectively
It connects, the other end of the third switching tube is connect with negative busbar, and the cathode of the third diode is for connecting anode, institute
The other end for stating third inductance is connected for connecting battery cathode；It is characterized in that, the third inductance and third switch
Further include in series arm where pipe：
Isolating device, the isolating device is connected when electric current flows to the third switching tube from the third inductance, in electric current
It is turned off when flowing to the third inductance from the third switching tube.
2. translation circuit according to claim 1, which is characterized in that the isolating device is set to the third switching tube
Between negative busbar or between the third switching tube and the third inductance or between the third inductance and battery cathode.
3. translation circuit according to claim 1, which is characterized in that the isolating device is diode.
4. translation circuit according to claim 1, which is characterized in that the isolating device is silicon-controlled.
5. translation circuit according to claim 3 or 4, which is characterized in that the cathode and positive bus-bar of the third diode
Between further include：
First switch is connected or disconnected for controlling the buck circuits with busbar.
6. translation circuit according to claim 3 or 4, which is characterized in that between second inductance and battery cathode also
Including：
Second switch is connected or disconnected for controlling double boost circuits with battery.
7. translation circuit according to claim 1, which is characterized in that further include start unit, the start unit includes
The second end of silicon-controlled, buffer resistance, rectifier diode and relay, first inductance passes through the controllable of the start unit
Silicon is connect with anode, and the buffer resistance, the rectifier diode and the relay are whole in parallel after being sequentially connected in series
To the silicon-controlled both ends of the start unit.
8. translation circuit according to claim 1 or 2, which is characterized in that the first switch pipe, second switch pipe,
Three switching tubes further include anti-parallel diodes.
9. a kind of ups power, which is characterized in that including such as claim 1 to 8 any one of them translation circuit.
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| CN201820647924.4U CN208046314U (en) | 2018-05-02 | 2018-05-02 | A kind of ups power and its translation circuit |
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| CN201820647924.4U CN208046314U (en) | 2018-05-02 | 2018-05-02 | A kind of ups power and its translation circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110198075A (en) * | 2019-04-26 | 2019-09-03 | 科华恒盛股份有限公司 | Redundancy backup power supply and chip and electronic equipment |
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2018
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110198075A (en) * | 2019-04-26 | 2019-09-03 | 科华恒盛股份有限公司 | Redundancy backup power supply and chip and electronic equipment |
| CN110198075B (en) * | 2019-04-26 | 2021-03-19 | 漳州科华技术有限责任公司 | Redundant backup power supply, chip and electronic equipment |
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