CN207994020U - High-power RF mems switch device based on work(division line structure - Google Patents
High-power RF mems switch device based on work(division line structure Download PDFInfo
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- CN207994020U CN207994020U CN201820428537.1U CN201820428537U CN207994020U CN 207994020 U CN207994020 U CN 207994020U CN 201820428537 U CN201820428537 U CN 201820428537U CN 207994020 U CN207994020 U CN 207994020U
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Abstract
The utility model is related to a kind of high-power RF mems switch devices based on work(division line structure, it include substrate, microwave transmission line is distributed with above substrate, the first coplanar waveguide transmission line ground wire and the second coplanar waveguide transmission line ground wire are provided at left and right sides of microwave transmission line, active separation structure is arranged in the front end of microwave transmission line, the rear end of microwave transmission line is provided with combining structure, suspension structure is provided with above microwave transmission line, work(separation structure, it is provided with construction of switch between combining structure, suspension ground structure is provided between construction of switch, microwave transmission line, driving structure is provided between substrate.Thus, work(separation structure and combining structure are used, the power capacity of RF MEMS is extended, RF signal power is allocated and is combined by work(separation structure and combining structure, the influence for avoiding Kelvin effect caused by direct paralleling switch improves the power capacity of switch.It designs simple and convenient, is easy to extend.
Description
Technical field
The utility model is related to a kind of RF MEMS Switches structure more particularly to a kind of big work(based on work(division line structure
Rate RF MEMS Switches device.
Background technology
RF MEMS (microelectromechanical systems) switch is a branch more important in RF MEMS field, it is profit
A kind of RF switch made of MEMS technology, by the movement of micro mechanical structure, to reach the mesh for the through and off for controlling signal
's.Due to advantages such as the high-isolation of RF MEMS Switches, low-loss, high linearities, make it in radar, communication, test equipment
Equal fields have a wide range of applications.But the lower power capacity of conventional radio frequency mems switch is the main bottle for limiting its application
One of neck.
For RF MEMS Switches, power capacity is that switch is instigated to complete certain cycle-index without the defeated of failure
Enter power limit, and the service life refers to then switching the cycle-index that can be worked normally under certain power condition.In general, power capacity
It is the one group of index that is mutually related with the service life.For traditional RF MEMS Switches, when passing through relatively high power, can to switch
Irreversible damage occurs, and then fails.Solve this kind of Problem of Failure, the most straightforward approach for the power capacity for increasing device i.e.
Increase paralleling switch number, but in frequency microwave frequency range, the Kelvin effect (or edge effect) of electromagnetic field signal clearly,
So that on the switch of current convergence on the outside, increases paralleling switch number and played the role of being not obvious.
In view of the above shortcomings, the designer, is actively subject to research and innovation, it is a kind of based on work(combiner knot to found
The high-power RF mems switch device of structure makes it with more the utility value in industry.
Utility model content
In order to solve the above technical problems, the purpose of this utility model be to provide it is a kind of based on the high-power of work(division line structure
RF MEMS Switches device.
The high-power RF mems switch device based on work(division line structure of the utility model, includes substrate, wherein：
Microwave transmission line is distributed with above the substrate, the first coplanar waveguide transmission line is provided at left and right sides of the microwave transmission line
Active separation structure, the microwave transmission is arranged in the front end of ground wire and the second coplanar waveguide transmission line ground wire, the microwave transmission line
The rear end of line is provided with combining structure, and suspension structure, the work(separation structure, combining knot are provided with above the microwave transmission line
It is provided with construction of switch between structure, driving structure is provided between the microwave transmission line, substrate.
Further, the above-mentioned high-power RF mems switch device based on work(division line structure, wherein the suspension
Structure includes the ground that suspends, and the suspension ground is arranged between construction of switch, and the left and right ends for suspending ground are respectively provided with free
Air bridge, the air bridges are also connected with the first coplanar waveguide transmission line ground wire, the second coplanar waveguide transmission line ground wire.
Further, the above-mentioned high-power RF mems switch device based on work(division line structure, wherein the sky
Air bridge is bridge shape structure, and the bottom of the bridge shape structure is connected with the ground that suspends, and the top bifurcated of the bridge shape structure and first is total to
Coplanar waveguide transmission line ground wire, the second coplanar waveguide transmission line ground wire are connected.
Further, the above-mentioned high-power RF mems switch device based on work(division line structure, wherein the work(
Separation structure is constructed for T junction, or is made for y-type structure；The combining structure is constructed for T junction, or is made for y-type structure.
Further, the above-mentioned high-power RF mems switch device based on work(division line structure, wherein described to open
Pass structure is mems switch structure.
Further, the above-mentioned high-power RF mems switch device based on work(division line structure, wherein described
Mems switch structure switchs for tandem, or is parallel switch, or is capacitance-type switch, or is resistance-type switch.
Further, the above-mentioned high-power RF mems switch device based on work(division line structure, wherein the drive
Dynamic structure is mems switch driving electrodes, and the mems switch driving electrodes include bottom crown, lead, the interconnection of external pad
It constitutes.
Further, the above-mentioned high-power RF mems switch device based on work(division line structure, wherein the lining
Bottom is glass type substrate, or is ceramic-type substrate, or is High Resistivity Si formula substrate.
Still further, the above-mentioned high-power RF mems switch device based on work(division line structure, wherein described micro-
Wave transmission line is coplanar waveguide transmission line, or is microstrip line.
According to the above aspect of the present invention, the utility model has at least the following advantages：
1, work(separation structure and combining structure are used, the power capacity of RF MEMS is extended, by work(separation structure and
Combining structure RF signal power is allocated and is combined, avoid Kelvin effect caused by direct paralleling switch (or
Edge effect) influence, improve the power capacity of switch.
2, the work(separation structure that uses and the different application that combining structure is same structure, in utilitarian design process only
It needs to design work(point or is combined one of those, another directly inputs output and exchanges, and design is simple and convenient.
3, work(separation structure and combining structure can be superimposed to form tree structure, be easy to extend, and design higher power is facilitated to hold
The RF MEMS Switches structure of amount.
The above description is merely an outline of the technical solution of the present invention, in order to better understand the skill of the utility model
Art means, and can be implemented in accordance with the contents of the specification, below on the preferred embodiment of the present invention and the accompanying drawings in detail
It describes in detail bright as after.
Description of the drawings
Fig. 1 is the dimensional structure diagram of the high-power RF mems switch device based on work(division line structure.
Fig. 2 is the overall structure diagram of the high-power RF mems switch device based on work(division line structure.
Fig. 3 is the cross-sectional view along the directions A-A ' of Fig. 2.
Fig. 4 is the cross-sectional view along the directions B-B ' of Fig. 2.
The meaning of each reference numeral is as follows in figure.
1 work(separation structure 2 is combined structure
3 air bridges 4 suspend ground
5 microwave transmission line, 6 first coplanar waveguide transmission line ground wire
7 mems switch structure, 8 mems switch driving electrodes
9 substrate, 10 second coplanar waveguide transmission line ground wire
Specific implementation mode
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.Below
Embodiment is not intended to limit the scope of the present invention for illustrating the utility model.
Include substrate 9 such as the high-power RF mems switch device based on work(division line structure of Fig. 1 to 4.Certainly,
The substrate 9 used according to the difference of the difference of practical functional need and model is glass type substrate 9, or ceramic-type serves as a contrast
Bottom 9 can also be as High Resistivity Si formula substrate 9.Its unusual place of the utility model is：9 top of substrate is distributed with micro-
Wave transmission line 5 is provided with the first coplanar waveguide transmission line ground wire 6 and the second co-planar waveguide in the left and right sides of microwave transmission line 5
Transmission line ground wire 10.Meanwhile active separation structure 1 is set in the front end of microwave transmission line 5, the rear end of microwave transmission line 5 is provided with
It is combined structure 2.Also, it is provided with construction of switch between work(separation structure 1, combining structure 2.Furthermore microwave transmission line 5, substrate 9
Between be provided with driving structure.
From the point of view of one preferable embodiment of the utility model, the suspension structure of use includes the ground 4 that suspends, and suspends ground
4 are arranged between construction of switch.Meanwhile the left and right ends on the ground 4 that suspends are both provided with air bridges 3, air bridges 3 are also coplanar with first
Waveguide transmission line ground wire 6, the second coplanar waveguide transmission line ground wire 10 are connected.Specifically, air bridges 3 are bridge shape structure, bridge shape
The bottom of structure is connected with the ground 4 that suspends, and the top bifurcated of bridge shape structure and the first coplanar waveguide transmission line ground wire 6, second are coplanar
Waveguide transmission line ground wire 10 is connected.
From the point of view of further, work(separation structure 1 used by the utility model is constructed for T junction, or is made for y-type structure.By
This, rely on work(separation structure 1 not in specie, one-channel signal can be divided into two-way or multichannel, can not also be uniformly by power
It is allocated.Simultaneously, you can be disposably divided into multichannel, can be superimposed with multiple work(separation structures 1.
Meanwhile in order to meet necessary combining needs, used combining structure 2 constructs for T junction, or is Y type knots
Construction.In such manner, it is possible to which it is one-channel signal to be combined two-way or multiple signals when actual implementation.Specifically, combining knot
Structure 2 can synthesize the equal two-way of signal power or multiple signals, can also by the unequal two-way of signal power or
Multiple signals are synthesized.
As a result, when actual use, branch and the combining of signal can be realized by work(separation structure 1 and combining structure 2,
And then realize the RF MEMS Switches structure of high power capacity.Also, it is combined the input signal minor matters and output signal branch of structure 2
Section ruler cun, shape etc. can be different, can be attached to other accessory structures (such as air bridges 3, suspend 4, signal wire corner knot
Structure).Identical, the input signal minor matters of work(separation structure 1 and output signal minor matters size, shape etc. can also be different, can be attached
With other accessory structures (such as air bridges 3, suspend 4, signal wire corner structure), it is important to be directed to its transmission performance and work(
Point performance optimizes minor matters and the design of other accessory structures.
From the point of view of further, the construction of switch that the utility model uses is mems switch structure 7.Specifically, in order to full
The different application of foot needs, and mems switch structure 7 can be tandem switch, or be parallel switch, can also be capacitance
Formula switchs, and can also be the various switch forms such as resistance-type switch.Meanwhile various type of drive may be used in switch, for example, it is quiet
Electric drive, magnetostatic driving, Piezoelectric Driving, thermal drivers etc..
Also, the driving structure used is mems switch driving electrodes 8.Specifically, mems switch driving electrodes 8 include
Bottom crown, lead, external pad are interconnected to constitute.
Furthermore in order to when practical application, effectively coordinate air bridges 3 and the dependency structures such as ground 4 that suspend, class can be formed
Like the structure of GSGSG (ground-signal-ground-signal wire-ground wire), the microwave transmission line 5 used is coplanar wave guide transmission
Line, or it is microstrip line.
It can be seen that using after the utility model by above-mentioned character express and in conjunction with attached drawing, gather around and have the following advantages：
1, work(separation structure and combining structure are used, the power capacity of RF MEMS is extended, by work(separation structure and
Combining structure RF signal power is allocated and is combined, avoid Kelvin effect caused by direct paralleling switch (or
Edge effect) influence, improve the power capacity of switch.
2, the work(separation structure that uses and the different application that combining structure is same structure, in utilitarian design process only
It needs to design work(point or is combined one of those, another directly inputs output and exchanges, and design is simple and convenient.
3, work(separation structure and combining structure can be superimposed to form tree structure, be easy to extend, and design higher power is facilitated to hold
The RF MEMS Switches structure of amount.
The above is only the preferred embodiment of the utility model, is not intended to limit the utility model, it is noted that
For those skilled in the art, without deviating from the technical principle of the utility model, it can also do
Go out several improvements and modifications, these improvements and modifications also should be regarded as the scope of protection of the utility model.
Claims (9)
1. the high-power RF mems switch device based on work(division line structure includes substrate (9), it is characterised in that：It is described
Microwave transmission line (5) is distributed with above substrate (9), the first co-planar waveguide is provided at left and right sides of the microwave transmission line (5)
Transmission line ground wire (6) and the second coplanar waveguide transmission line ground wire (10), active point of knot is arranged in the front end of the microwave transmission line (5)
The rear end of structure (1), the microwave transmission line (5) is provided with combining structure (2), is provided with above the microwave transmission line (5)
Suspension structure is provided with construction of switch, the microwave transmission line (5), substrate between the work(separation structure (1), combining structure (2)
(9) driving structure is provided between.
2. the high-power RF mems switch device according to claim 1 based on work(division line structure, it is characterised in that：
The suspension structure include suspend (4), suspensions ground (4) be arranged between construction of switch, it is described suspend (4) a left side
Right both ends are both provided with air bridges (3), the air bridges (3) also with the first coplanar waveguide transmission line ground wire (6), the second coplanar wave
Transmission line ground wire (10) is led to be connected.
3. the high-power RF mems switch device according to claim 2 based on work(division line structure, it is characterised in that：
The air bridges (3) are bridge shape structure, and the bottom of the bridge shape structure is connected with the ground (4) that suspends, the top of the bridge shape structure
Bifurcated is connected with the first coplanar waveguide transmission line ground wire (6), the second coplanar waveguide transmission line ground wire (10).
4. the high-power RF mems switch device according to claim 1 based on work(division line structure, it is characterised in that：
The work(separation structure (1) constructs for T junction, or is made for y-type structure；The combining structure (2) constructs for T junction, or is Y
Type structure is made.
5. the high-power RF mems switch device according to claim 1 based on work(division line structure, it is characterised in that：
The construction of switch is mems switch structure (7).
6. the high-power RF mems switch device according to claim 5 based on work(division line structure, it is characterised in that：
The mems switch structure (7) switchs for tandem, or is parallel switch, or is capacitance-type switch, or is resistance
Formula switchs.
7. the high-power RF mems switch device according to claim 1 based on work(division line structure, it is characterised in that：
The driving structure is mems switch driving electrodes (8), and the mems switch driving electrodes (8) include bottom crown, lead, external
Pad is interconnected to constitute.
8. the high-power RF mems switch device according to claim 1 based on work(division line structure, it is characterised in that：
The substrate (9) is glass type substrate (9), or is ceramic-type substrate (9), or is High Resistivity Si formula substrate (9).
9. the high-power RF mems switch device according to claim 1 based on work(division line structure, it is characterised in that：
The microwave transmission line (5) is coplanar waveguide transmission line, or is microstrip line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820428537.1U CN207994020U (en) | 2018-03-28 | 2018-03-28 | High-power RF mems switch device based on work(division line structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820428537.1U CN207994020U (en) | 2018-03-28 | 2018-03-28 | High-power RF mems switch device based on work(division line structure |
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| Publication Number | Publication Date |
|---|---|
| CN207994020U true CN207994020U (en) | 2018-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820428537.1U Active CN207994020U (en) | 2018-03-28 | 2018-03-28 | High-power RF mems switch device based on work(division line structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115377631A (en) * | 2022-09-16 | 2022-11-22 | 北京邮电大学 | Radio frequency MEMS switch |
-
2018
- 2018-03-28 CN CN201820428537.1U patent/CN207994020U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115377631A (en) * | 2022-09-16 | 2022-11-22 | 北京邮电大学 | Radio frequency MEMS switch |
| CN115377631B (en) * | 2022-09-16 | 2023-11-03 | 北京邮电大学 | Radio frequency MEMS switch |
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