CN207992861U - A kind of N ditches metal-oxide-semiconductor driving booster circuit - Google Patents
A kind of N ditches metal-oxide-semiconductor driving booster circuit Download PDFInfo
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- CN207992861U CN207992861U CN201820435061.4U CN201820435061U CN207992861U CN 207992861 U CN207992861 U CN 207992861U CN 201820435061 U CN201820435061 U CN 201820435061U CN 207992861 U CN207992861 U CN 207992861U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 20
- 230000000694 effects Effects 0.000 claims abstract description 4
- 230000005611 electricity Effects 0.000 claims description 5
- 238000004891 communication Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
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Abstract
The utility model discloses a kind of N ditches metal-oxide-semiconductors to drive booster circuit, the booster circuit includes that PWM waveform generates unit, booster upper tube, booster down tube, voltage liter act unit, High voltage output unit, the voltage rises act unit and is electrically connected with the High voltage output unit, it is characterized in that, the booster circuit further includes:Upper tube driving power, upper tube isolation drive unit, the upper tube isolation drive unit is electrically connected with upper tube driving power and booster upper tube, the output end that the PWM waveform generates unit is electrically connected with upper tube isolation drive unit and booster down tube, upper tube driving power rises act unit with voltage and is electrically connected, and the voltage lift unit realizes the promotion of supply voltage under the collective effect of the booster upper tube and the booster down tube.The circuit make it possible N ditch metal-oxide-semiconductors in car light controller with.
Description
Technical field
The utility model is related to N ditch metal-oxide-semiconductors driving boosting fields, and in particular to a kind of two-wheel vehicle used N-channel MOS pipe boosting
Circuit.
Background technology
With the development of modern two wheeler electrical apparatus technology, more and more electric components are installed on two wheeler vehicle, cause
Electric control switch is continuously increased, and the switch topology of vehicle has become an important topic in vehicle development.In order to solve this
One key subjects replace existing electric control switch, so as to use body using MOS or relay constant power control device
The smaller signaling switch of product replaces traditional switch, achievees the purpose that facilitate vehicle layout.
Electric component control switch in traditional two-wheeled vehicle is all mounted on positive terminal, these traditional two wheelers
Ownership currently on the market has tens million of;And they wish to mitigate the operational load ridden, and improve traffic safety, and to preceding
Illuminator manually boots the upgrading requirement for proposing automatic opening, while cannot receive very high upgrade cost again.In recent years, state
Nei Ji great two-wheeleds depot all released corresponding upgrade of parts one after another according to the market demand, can be due to that cannot change the main electricity of former vehicle
Cable speed, so being substantially all the drive scheme for using relay driving scheme or the installation of P-channel MOS anodes.However, this
The market acceptance of scheme is unsatisfactory, and market generally believes that relay scheme works are good, does not interfere with the brightness of headlamp, but
The disadvantage is that it is of high cost, and the contact of relay is easy oxidation deactivation, high failure rate.The driving that P-channel MOS anodes are installed in market
The feedback of scheme is:1, using high cost transistor, pipe pressure drop is small, and lamplight brightness is unaffected, high failure rate;2, using low
Cost transistor, pipe pressure drop is big, and lamplight brightness weakens, and failure rate is low.Marketing users are looked around in the majority due to the above reasons, are risen
Grade occupies few.
N-channel MOS pipe has at low cost and long lifespan advantage, and relay will be replaced to become the power device that mainstream uses
Part.According to the on state characteristic of N-channel MOS pipe, the conducting voltage for applying 4V~10V between the poles G and the poles S is needed, this requires N
Channel MOS tube must be fitted to the negative pole end (cathode of battery) of electric component, could realize the control of electric component.But in this way
The shortcomings that doing is also the connection it will be apparent that due to being disconnected electric component and battery cathode so that this electric component is opposite
Other disconnect the component of anode (cathode connection is good), are to be in electriferous state;It is typically due between each electric component
The also bus of some communications, such as CAN, RS485 or link etc..As long as this two or more electric appliance portions with bus connection
After any one of part cuts off cathode by MOS, the voltage of power supply is by this component by communication bus CAN, RS485 or link
Bus is added on the bus chip of other all electric components, can lead to bus communication network communication failure, is gone back if serious
The bus chip of other component can be burnt.The generation of the above problem in order to prevent carries this one kind in the electric appliance of bus communication
The requirement of component is that control power device is mounted on positive terminal.
If the MOS of N-channel to be directly installed to the positive terminal (positive pole) of electric component, due to MOS driving voltages
It is identical as the power supply that electrical appliance uses, cause metal-oxide-semiconductor cut-in voltage Vgs to be equal to the pressure drop Vds of MOS, only tens millivolts are arrived
Several volts of zero, are not achieved the requirement of 4V~10V at all, i.e. MOS can not work normally.Such case engineer can only select P ditches
The drive scheme of road metal-oxide-semiconductor or relay, this makes the cost of control pipe that will be substantially improved, is unfavorable for the popularization and application of technology.
Utility model content
To solve the above-mentioned problems, the purpose of this utility model is to provide a kind of N-channel MOSs can be installed to electric component
Positive terminal, play that its internal resistance is low, advantage at low cost, the utility model provides a kind of reliable low cost solution.
To achieve the above object, the utility model is achieved by following technical scheme:
A kind of N ditches metal-oxide-semiconductor driving booster circuit, the booster circuit include that PWM waveform generates unit, booster upper tube, rises
Depressor down tube, voltage, which rise, lifts unit, High voltage output unit, upper tube driving power, upper tube isolation drive unit;The voltage, which rises, to be lifted
Unit is electrically connected with the High voltage output unit, the upper tube isolation drive unit and upper tube driving power and booster upper tube electricity
Connection, the output end that the PWM waveform generates unit are electrically connected with upper tube isolation drive unit and booster down tube, upper tube driving
Power supply and voltage, which rise, to be lifted unit and is electrically connected, and the voltage lift unit is total to the booster upper tube and the booster down tube
The promotion of supply voltage is realized under same-action.
Further, what the upper tube isolation drive unit and down tube work connected is that the same PWM waveform generates
The output end of unit.
Further, the voltage of the High voltage output unit and output power generate unit output wave with the PWM waveform
The change of the frequency and duty ratio of shape and change.
Further, the booster upper tube and booster down tube are the power tube of the same model of same type.
Further, the upper tube isolated location uses photoelectric isolating device or transformer isolation device.
Compared with prior art, the utility model has the beneficial effects that:
1. the driving booster circuit of the N ditch metal-oxide-semiconductors of the utility model improves the application range of N ditch metal-oxide-semiconductors;
2. upper and lower boosting pipe is driven using isolation method in the utility model, interfering with each other when avoiding unlatching, ensure
The stability of circuit.
Description of the drawings
Specific embodiment of the present utility model is described in further detail below in conjunction with the accompanying drawings, wherein:
Fig. 1 is the booster circuit overall structure diagram of the utility model;
Fig. 2 is the booster circuit of the utility model in the application drawing for automatically turning on headlight controller plc.
Specific implementation mode
The preferred embodiment of the utility model is illustrated below in conjunction with attached drawing, it should be understood that described herein excellent
It selects embodiment to be only used for describing and explaining the present invention, is not used to limit the utility model.
It generates unit 1 as shown in Figure 1, booster circuit described in the utility model includes PWM waveform, booster upper tube 2, rise
Depressor down tube 3, upper tube isolation drive unit 4, upper tube driving power 5, voltage, which rise, lifts unit 6, High voltage output unit 7, the electricity
Pressure rises act unit 6 and is electrically connected with the High voltage output unit 7, the upper tube isolation drive unit 4 and upper tube driving power 5 and liter
Depressor upper tube 2 is electrically connected, and the PWM waveform generates the output end and upper tube isolation drive unit 4 and booster down tube 3 of unit 1
Electrical connection, upper tube driving power 5 and voltage, which rise, to be lifted unit 6 and is electrically connected, the voltage lift unit the booster upper tube with
The promotion of supply voltage is realized under the collective effect of the booster down tube.
In use, booster circuit is installed on supply voltage, PWM wave generates unit 1, according to the demand of control power tube
Generate the PWM waveform of certain frequency and duty ratio;PWM waveform is added to the upper down tube driver of liter circuit, driving upper, lower tube alternating
Work, is lifted to supply voltage or more by the capacitance voltage of voltage lift unit, is sent in the high-voltage capacitance of High voltage output unit
It stores, when driving power pipe needs work, is sent to the poles G of power MOS, allow power tube to be connected, work.
In use, this booster circuit only needs PWM wave to generate the PWM waveform of unit generation all the way, can meet,
The demand of lower boosting pipe boosting work.Because using with PWM waveform all the way when upper and lower boosting pipe work, PWM waveform it is high and low
Voltage change also avoids the risk that upper and lower boosting pipe simultaneously turns on short circuit, substantially increases there is no there is overlapping region
The reliability of circuit.Therefore any processing is done without the conducting dead zone to upper, lower tube on circuit, circuit becomes simple and reliable.
In use, in the utility model, upper and lower boosting pipe uses the pipe of same model, it is ensured that its parameter
Consistency, while also reducing cost.In addition, boosting pipe is by the way of isolation drive above and below, to avoid phase when opening
Mutually interference, ensure that the reliability of circuit.
Simultaneously, it should be pointed out that due to being provided with this booster circuit so that matching used power in the utility model
Driver --- N-channel MOS pipe, the substitution scheme as fast switching power device P-channel metal-oxide-semiconductor are possibly realized, and overcome P
The disadvantage that channel MOS tube is big compared to the internal resistance of N-channel MOS pipe, unit price is high ensure that the performance of power drive device and economic effect
Benefit.
The cheap N-channel MOS pipe of the utility model matched price is upgrading traditional two-wheeled car light or other electric components certainly
Dynamic control is upper and has feature small, at low cost, reliable and stable, easy to install, is suitble on a large scale pacify on traditional cart
Dress uses.
Fig. 2 is the booster circuit of the utility model in the application drawing for automatically turning on big lamp controller.
As shown in Fig. 2, Integrated circuit IC 1, which forms PWM waveform, generates unit, triode Q8 is booster down tube, triode
Q7 booster upper tubes, photoelectrical coupler U1, triode Q11, diode D6, resistance R23, resistance R32 form upper tube isolation drive
Unit, diode D4, capacitance C15, resistance R17 form upper tube driving power, and diode D3, capacitance C11 form voltage lift list
Member, diode D5, capacitance C12, capacitance C13 form High voltage output unit, and cell voltage VCC+12V is applied directly to triode Q7
The poles C, be added on capacitance C11, capacitance C15 by diode D3, diode D4 respectively.The PWM waveform that IC1 is generated passes through all the way
Resistance R26 is added to the poles b of booster down tube Q8, and another way is added to Q11 in booster upper tube isolation drive unit by resistance R32
The poles b.
When PWM wave is positive half cycle, the Q8 conductings of booster down tube, it is same that power supply VCC+12V passes through diode D3, diode D4
When for voltage lift capacitance C11, upper tube driving power capacitance C15 charging.Q11, photoelectrical coupler U1, booster upper tube Q7 at this time
Cut-off.
When PWM wave is negative half period, the Q8 cut-offs of booster down tube.Q11, photoelectrical coupler U1 conductings at this time, upper tube driving electricity
The voltage of source C15 is added to the poles b of booster upper tube Q7 by resistance R17, photoelectrical coupler U1, and booster upper tube Q7 is made to be connected.
Since booster upper tube Q7 is connected, diode will be passed through together in the voltage superposition to the power supply of VCC+12V lifted on capacitance C11
D5 charges to High voltage output capacitance C12, and so capacitance C12 will obtain power supply VCC 1 again to 2 times of voltage, realize voltage
Lifting.
It is required according to the difference of power drive pipe, the frequency of PWM wave can be adjusted, duty ratio obtains different voltage outputs
Value.
ICI on figure is in addition to generating PWM wave, moreover it is possible to according to the collected light intensities of light-sensitive samples unit Q3, pass through No. 7
Pin export auto-open-close lamp control signal, by resistance R33, resistance R31, triode Q12, triode Q4, resistance R13,
The power MOS pipe Q5 of resistance R15 control headlamps, that realizes headlamp opens and closes automatically function.
The above descriptions are merely preferred embodiments of the present invention, not makees in any form to the utility model
Limitation, therefore it is every without departing from the content of the technical scheme of the utility model, according to the technical essence of the utility model to implementing above
Any modification, equivalent variations and modification, are still within the scope of the technical solutions of the present invention made by example.
Claims (5)
1. it includes that PWM waveform generates unit, booster upper tube, boosting that a kind of N ditches metal-oxide-semiconductor, which drives booster circuit, the booster circuit,
Device down tube, voltage, which rise, lifts unit, High voltage output unit, and the voltage rises act unit and is electrically connected with the High voltage output unit,
It is characterized in that,
The booster circuit further includes:Upper tube driving power, upper tube isolation drive unit, the upper tube isolation drive unit with it is upper
Pipe driving power and the electrical connection of booster upper tube, the PWM waveform generate the output end of unit and upper tube isolation drive unit and
Booster down tube is electrically connected, and upper tube driving power rises act unit with voltage and is electrically connected, and the voltage lift unit is in the boosting
The promotion of supply voltage is realized under the collective effect of device upper tube and the booster down tube.
2. N ditches metal-oxide-semiconductor according to claim 1 drives booster circuit, which is characterized in that the upper tube isolation drive unit
It is output end that same PWM waveform generates unit with down tube work connection.
3. N ditches metal-oxide-semiconductor according to claim 1 drives booster circuit, which is characterized in that the electricity of the High voltage output unit
Pressure and output power generate the change of the frequency and duty ratio for the waveform that unit exports with the PWM waveform and change.
4. N ditches metal-oxide-semiconductor according to claim 1 drives booster circuit, which is characterized in that the booster upper tube and boosting
Device down tube is the power tube of the same model of same type.
5. N ditches metal-oxide-semiconductor according to claim 1 drives booster circuit, which is characterized in that the upper tube isolated location uses
Photoelectric isolating device or transformer isolation device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201820435061.4U CN207992861U (en) | 2018-03-29 | 2018-03-29 | A kind of N ditches metal-oxide-semiconductor driving booster circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201820435061.4U CN207992861U (en) | 2018-03-29 | 2018-03-29 | A kind of N ditches metal-oxide-semiconductor driving booster circuit |
Publications (1)
Publication Number | Publication Date |
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CN207992861U true CN207992861U (en) | 2018-10-19 |
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ID=63829410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201820435061.4U Active CN207992861U (en) | 2018-03-29 | 2018-03-29 | A kind of N ditches metal-oxide-semiconductor driving booster circuit |
Country Status (1)
Country | Link |
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CN (1) | CN207992861U (en) |
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2018
- 2018-03-29 CN CN201820435061.4U patent/CN207992861U/en active Active
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