CN207966351U - A kind of device of the Micro LD based on VCSEL technologies - Google Patents
A kind of device of the Micro LD based on VCSEL technologies Download PDFInfo
- Publication number
- CN207966351U CN207966351U CN201721926355.9U CN201721926355U CN207966351U CN 207966351 U CN207966351 U CN 207966351U CN 201721926355 U CN201721926355 U CN 201721926355U CN 207966351 U CN207966351 U CN 207966351U
- Authority
- CN
- China
- Prior art keywords
- vcsel
- array
- micro
- electrode
- control system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The utility model discloses a kind of devices of the Micro LD based on VCSEL technologies, MOS integrated circuits (active matrix) are controlled by computer, MOS integrated circuits can control the switch of each VCSEL vertical cavity surface-emitting laser diode in small diode laser matrix and power respectively, ultimately form image.Micro LD, with the light intensity of bigger, better directionality and better coherence on unit area, have broader practice foreground compared with Micro LED in industrial circle and display field.
Description
Technical field
The utility model is related to a kind of devices of the Micro LD based on VCSEL technologies.
Background technology
Micro LED technologies rapid advances in recent years, in display field and industrial circle application outburst.And it obtains with apple
The flood tide technological investment of the large enterprises such as fruit, Samsung, BOE.Micro LED technologies, i.e. LED micros and matrixing technology.
Refer to the LED array of high density microsize integrated on a single die, each LED pixel can be determined such as LED display
Location is operated alone and lights.That is Micro LED technologies be by small LED chip array on integrated power supply circuit, with
Integrated power supply circuit individually controls the switch and light and shade of each MicroLED particle, ultimately forms required X-Y scheme.
Since small LED particle is 360 ° luminous in MicroLED, passes through the convergences such as reflective layer, reflector, lenticule and send out
Angle is dissipated, but the final angle of divergence is still very big.In practical applications, it is often necessary to enough light intensity are generated in action face, it is reflective
The light efficiency of LED can be greatly reduced in the mechanism of layer, the convergence angle of divergence such as reflector.Meanwhile also to unit area in practical application
More stringent requirements are proposed for light intensity.
To solve the above problems, present utility model application people be worldwide put forward for the first time it is a kind of based on VCSEL's
Alternative scheme of the Micro LD technologies as the next-generation display and commercial Application of Micro LED technologies.Vertical-cavity surface-emitting
Laser diode (VCSEL, Vertical-Cavity-Surface-Emitting-Laser), they are perpendicular to wafer surface
Transmitting, resonator axis is parallel to PN junction surface at this time.Can be understood as VCSEL is all such diode lasers,
The direction of the launch is perpendicular to resonant-cavity surface.Here, can more particularly to resonator length swash less than the surface emitting of active region thickness
Light device is related to surface emitting laser or be related to external or a coupling resonance there are one tools that resonator integrally lengthens
The surface emitting laser of device.Micro LD technologies, i.e., micro- laser diodes matrix technology, that is, LD (Laser Diode
Laser diode) micromation and matrixing technology.Micro LD technologies refer to integrating height on a Micro LD chip
The LD arrays of density microsize, and make each LD pixel can addressing, be operated alone and light.Micro LD based on VCSEL
Technology refers to the VCSEL array for integrating high density microsize on a Micro LD chip, and makes each VCSEL
Pixel can addressing, be operated alone and light.
Micro LD are compared with Micro LED, and two orders of magnitude can be improved in unit area light intensity, and the angle of divergence is by LED's
180 ° shine and have converged within 30 °, or even can converge within 5 °.Single-mode laser, each LD can be used in Micro LD particles
The emergent light of particle has better coherence and more consistent polarization state.
Utility model content
A kind of device of the Micro LD based on VCSEL technologies of the utility model will solve the problems, such as it is that finally can get
The VCSEL array of high density microsize is integrated on a Micro LD chip, and make each VCSEL pixel can addressing,
It is operated alone and lights, and then form the arbitrary optical design of magnanimity pixel.It is final obtain be more than tradition Micro LED and other
The optical property of the device of light source, the device of other displays, other devices exposed.
The utility model includes：Substrate (1), MOS integrated circuits (2), VCSEL array (3), external control system (4)；It is logical
Cross each electrode power supply shape of the electrod-array (22) on the independently addressable MOS integrated circuits (2) of external control system (4)
State, so by the power supply independent control of each electrode in coordination electrode array (22) each VCSEL (31) shine with
Extinguish, shone by controllable each VCSEL (31) and extinguishes the specific laser pattern needed for final composition.
Substrate (1) material uses silicon substrate or glass base.
The MOS integrated circuits (2) include PMOS, NMOS and CMOS.
MOS integrated circuits (2) surface is contained C >=1 pin (21) and is connect with external control system (4), and electricity is contained
Pole array (22) is connected with VCSEL array (3) and powers for VCSEL array (3), and pin (21) can be in MOS integrated circuits
(2) any position.
The MOS integrated circuits (2) contain multilayer circuit structure, and electrod-array is contained on MOS integrated circuits (2) surface
(22), each electrode in electrod-array (22) is independently addressable and independent control current switch, each electrode have its right
The self-powered circuit answered, driving current are provided by thin film transistor (TFT).
The electrod-array (22) shares m rows, and m is the integer more than 1, and n row, n is the integer more than 1, amounts to m*n
Electrode and rectangular arrangement, that is to say, that it is in 90 degree of angles that m rows, which arrange axis M and n row arrangement axis N,.
VCSEL, full name Vertical-Cavity-Surface-Emitting-Laser in the VCSEL array (3), in
Literary fame vertical cavity surface-emitting laser diode, VCSEL array (3) share A rows, and A is the integer more than 1, and B row, B is more than 1
Integer VCSEL (31) amounts to the A*B rectangular arrangement of VCSEL (31), that is to say, that A rows arrange axis and B row arrangement axis
In 90 degree of angles.
The Laser emission direction of the VCSEL (31) is perpendicular to substrate (1) plane；Laser wavelength range is more than or equal to 350
Nanometer is less than or equal to 890 nanometers；VCSEL (31) length of side is more than or equal to 500 nanometers, is less than or equal to 500 microns.
The electrod-array (22) shares the quantity A of the A rows of quantity m >=VCSEL array (3) of m rows, i.e. m >=A, electrode
Array (22) shares the quantity B, n >=B of the B row of quantity n >=VCSEL array (3) of n row, that is to say, that each VCSEL (31)
It can be connect with the electrode in one or more electrod-arrays (22).
The external control system (4) is the control system that can convert graphics digital signal to required electric signal；Outside
Portion's control system (4), and can independent control electrode by each electrode on more lead (41) connection electrode arrays (22)
The control system of each electrode power supply state on array (22).
Description of the drawings
Fig. 1 is the installation drawing for the Micro LD for being based on VCSEL technologies
Fig. 2 is 45 ° of views of MOS integrated circuits
Fig. 3 is the front view of MOS integrated circuits
Fig. 4 is 45 ° of views of VCSEL array
Fig. 5 is the front view of VCSEL array
Specific implementation mode
To make the purpose of this utility model, technical solution and advantage be more clearly understood, below in conjunction with specific embodiment, and
With reference to attached drawing, the utility model is further described.
It please referring to shown in attached drawing, the utility model provides a kind of device of the Micro LD based on VCSEL technologies, including：
Substrate (1) material uses silicon substrate or glass base.
- MOS integrated circuits (2) include PMOS, NMOS and CMOS.
- MOS integrated circuits (2) surface is contained C >=1 pin (21) and is connect with external control system (4), and electrode array is contained
It arranges (22) to be connected with VCSEL array (3) and power for VCSEL array (3), pin (21) can be in MOS integrated circuits (2)
Any position.
- MOS integrated circuits (2) contain multilayer circuit structure, and electrod-array (22) is contained on MOS integrated circuits (2) surface, electricity
Each electrode in pole array (22) is independently addressable and independent control current switch, each electrode have its corresponding independence
Driving circuit, driving current are provided by thin film transistor (TFT).
Electrod-array (22) shares m rows, and m is the integer more than 1, and n row, n is the integer more than 1, amounts to m*n electrode
And rectangular arrangement, that is to say, that it is in 90 degree of angles that m rows, which arrange axis M and n row arrangement axis N,.
VCSEL in VCSEL array (3), full name Vertical-Cavity-Surface-Emitting-Laser, Chinese
Name vertical cavity surface-emitting laser diode, VCSEL array (3) share A rows, and A is the integer more than 1, and B row, B is whole more than 1
Several VCSEL (31) amount to the A*B rectangular arrangement of VCSEL (31), that is to say, that A rows arrange axis and B row arrangement axis
In 90 degree of angles.
The Laser emission direction of-VCSEL (31) is perpendicular to substrate (1) plane；Laser wavelength range is more than or equal to 350 nanometers
Less than or equal to 890 nanometers；VCSEL (1) length of side is more than or equal to 500 nanometers, is less than or equal to 500 microns.
Electrod-array (22) shares the quantity A of the A rows of quantity m >=VCSEL array (3) of m rows, i.e. m >=A, electrod-array
(22) the quantity B, i.e. n >=B of the B row of quantity n >=VCSEL array (3) of n row are shared, that is to say, that each VCSEL (31) can
It is connect with the electrode in one or more electrod-arrays (22).
External control system (4) is the control system that can convert graphics digital signal to required electric signal；Outside control
System (4) processed, and can independent control electrod-array by each electrode on more lead (41) connection electrode arrays (22)
(22) control system of each electrode power supply state on.
The utility model patent passes through the electrod-array on the independently addressable MOS integrated circuits (2) of external control system (4)
(22) each electrode power supply state, and then pass through the power supply independent control of each electrode in coordination electrode array (22)
Each VCSEL (31) shines and extinguishes, and is shone by controllable each VCSEL (31) and extinguishes required specific of final composition
Laser pattern.Final to obtain be more than the device of tradition Micro LED and other light sources, other devices shown, other expose
The optical property of device.
It should be understood that after having read the content of the utility model, those skilled in the art can do the utility model respectively
Kind change or modification, such equivalent forms are equally in the scope of the appended claims of the present application.
Claims (10)
1. a kind of device of the Micro LD based on VCSEL technologies includes：Substrate (1), MOS integrated circuits (2), VCSEL array
(3), external control system (4)；Pass through the electrod-array on the independently addressable MOS integrated circuits (2) of external control system (4)
(22) each electrode power supply state, and then pass through the power supply independent control of each electrode in coordination electrode array (22)
Each VCSEL (31) shines and extinguishes, and is shone by controllable each VCSEL (31) and extinguishes required specific of final composition
Laser pattern.
2. the device of Micro LD based on VCSEL technologies according to claim 1 a kind of, which is characterized in that substrate (1)
Material uses silicon substrate or glass base.
3. the device of Micro LD based on VCSEL technologies according to claim 1 a kind of, which is characterized in that its feature
It is：MOS integrated circuits (2) include PMOS, NMOS and CMOS.
4. the device of Micro LD based on VCSEL technologies according to claim 1 a kind of, which is characterized in that MOS is integrated
Circuit (2) surface is contained C >=1 pin (21) and is connect with external control system (4), and electrod-array (22) and VCSEL gusts are contained
It arranges (3) to be connected and power for VCSEL array (3), pin (21) can be in any position of MOS integrated circuits (2).
5. the device of Micro LD based on VCSEL technologies according to claim 1 a kind of, which is characterized in that MOS is integrated
Circuit (2) contains multilayer circuit structure, and electrod-array (22) is contained on MOS integrated circuits (2) surface, every in electrod-array (22)
A electrode is all independently addressable and independent control current switch, each electrode have its corresponding self-powered circuit, driving electricity
Stream is provided by thin film transistor (TFT).
6. the device of Micro LD based on VCSEL technologies according to claim 4 a kind of, which is characterized in that electrode array
It arranging (22) and shares m rows, m is the integer more than 1, and n row, n is the integer more than 1, amounts to m*n electrode and rectangular arrangement,
That is m rows arrangement axis M and n row arrangement axis N is in 90 degree of angles.
7. the device of Micro LD based on VCSEL technologies according to claim 1 a kind of, which is characterized in that VCSEL gusts
VCSEL in (3), full name Vertical-Cavity-Surface-Emitting-Laser are arranged, Chinese name vertical-cavity surface-emitting swashs
Optical diode, VCSEL array (3) share A rows, and A is the integer more than 1, and B row, B is the integer VCSEL (31) more than 1, altogether
Count the A*B rectangular arrangement of VCSEL (31), that is to say, that it is in 90 degree of angles that A rows, which arrange axis with B row arrangement axis,.
8. the device of Micro LD based on VCSEL technologies according to claim 7 a kind of, which is characterized in that VCSEL
(31) Laser emission direction is perpendicular to substrate (1) plane；Laser wavelength range is received more than or equal to 350 nanometers less than or equal to 890
Rice；VCSEL (31) length of side is more than or equal to 500 nanometers, is less than or equal to 500 microns.
9. the device of Micro LD based on VCSEL technologies according to claim 5 a kind of, which is characterized in that electrode array
The quantity A of the A rows of the quantity m >=VCSEL array (3) of (22) shared m rows, i.e. m >=A are arranged, electrod-array (22) shares n row
The quantity B, i.e. n >=B of the B row of quantity n >=VCSEL array (3), that is to say, that each VCSEL (31) can be with one or more electricity
Electrode connection in pole array (22).
10. the device of Micro LD based on VCSEL technologies according to claim 1 a kind of, which is characterized in that outside control
System (4) processed is the control system that can convert graphics digital signal to required electric signal；External control system (4) passes through more
Each electrode on root lead (41) connection electrode array (22), and each electricity on energy independent control electrod-array (22)
The control system of pole power supply state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721926355.9U CN207966351U (en) | 2017-12-29 | 2017-12-29 | A kind of device of the Micro LD based on VCSEL technologies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721926355.9U CN207966351U (en) | 2017-12-29 | 2017-12-29 | A kind of device of the Micro LD based on VCSEL technologies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207966351U true CN207966351U (en) | 2018-10-12 |
Family
ID=63731652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721926355.9U Active CN207966351U (en) | 2017-12-29 | 2017-12-29 | A kind of device of the Micro LD based on VCSEL technologies |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207966351U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109586168A (en) * | 2018-12-07 | 2019-04-05 | 矽照光电（厦门）有限公司 | A kind of active laser color display module and display screen |
-
2017
- 2017-12-29 CN CN201721926355.9U patent/CN207966351U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109586168A (en) * | 2018-12-07 | 2019-04-05 | 矽照光电（厦门）有限公司 | A kind of active laser color display module and display screen |
| CN109586168B (en) * | 2018-12-07 | 2020-11-10 | 矽照光电（厦门）有限公司 | Active laser color display module and display screen |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11239399B2 (en) | Architecture for hybrid TFT-based micro display projector | |
| EP2334978B1 (en) | Method of manufacturing an illumination apparatus | |
| US7471706B2 (en) | High resolution, full color, high brightness fully integrated light emitting devices and displays | |
| US9368546B2 (en) | Imaging structure with embedded light sources | |
| US11699773B2 (en) | Process flow for hybrid TFT-based micro display projector | |
| US11942589B2 (en) | Managing thermal resistance and planarity of a display package | |
| WO2020163127A1 (en) | Architecture for hybrid tft-based micro display projector | |
| WO2020163436A1 (en) | Process flow for hybrid tft-based micro display projector | |
| US20230253441A1 (en) | Common anode micro-led system architecture | |
| EP3877804A1 (en) | Process flow for hybrid tft-based micro display projector | |
| CN207966351U (en) | A kind of device of the Micro LD based on VCSEL technologies | |
| CN207966352U (en) | A kind of device of the Micro LD based on horizontal cavity surface-emitting laser diode technology | |
| CN109994050A (en) | A kind of device of the Micro LD based on VCSEL technology | |
| CN207966353U (en) | A kind of device of the Micro LD based on nano laser technology | |
| CN207966354U (en) | A kind of device based on semiconductor laser diode Yu the Micro LD of MOS integrated circuit techniques | |
| CN207966459U (en) | A kind of device of the Micro LD based on surface-emission laser diode technology | |
| US11574586B1 (en) | Hybrid IGZO pixel architecture | |
| CN109994070A (en) | A kind of device of the Micro LD based on surface-emission laser diode technology | |
| CN109994049A (en) | A kind of device based on semiconductor laser diode Yu the Micro LD of MOS integrated circuit technique | |
| CN108139039A (en) | Lighting device | |
| CN113745392A (en) | Small-divergence-angle N-type common-cathode Micro LED device and array thereof | |
| CN113674639B (en) | Micro LED device with small divergence angle and micro LED array | |
| KR20240058951A (en) | Light emitting diodes with field plates | |
| CN113838961A (en) | Small-divergence-angle N-type common-cathode Micro LED device and array thereof | |
| TW202324353A (en) | Hybrid igzo pixel architecture |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210802 Address after: 100000 No. a2079, floor 2, building 2, No. 14, Zhonghe street, Beijing Economic and Technological Development Zone (centralized office area) Patentee after: Beijing digital optical core technology Co.,Ltd. Address before: 100083 block a, building 5, Jiulong garden, Shuangjing, Chaoyang District, Beijing Patentee before: BEIJING DERUI INDUSTRY AND TRADE Co.,Ltd. |
|
| TR01 | Transfer of patent right |