CN207852878U - Three holes ground connection minimizes quasi- SIW circulators - Google Patents

Three holes ground connection minimizes quasi- SIW circulators Download PDF

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Publication number
CN207852878U
CN207852878U CN201820305969.3U CN201820305969U CN207852878U CN 207852878 U CN207852878 U CN 207852878U CN 201820305969 U CN201820305969 U CN 201820305969U CN 207852878 U CN207852878 U CN 207852878U
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China
Prior art keywords
silicon substrate
siw
hole
substrate cavity
circulator
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Withdrawn - After Issue
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CN201820305969.3U
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Chinese (zh)
Inventor
燕宣余
高春燕
闫欢
韩晓川
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SOUTHWEST INSTITUTE OF APPLIED MAGNETICS
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SOUTHWEST INSTITUTE OF APPLIED MAGNETICS
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Abstract

The utility model discloses a kind of three holes ground connection to minimize quasi- SIW circulators, belongs to microwave device field, including silicon substrate cavity(1), gyromagnet substrate(2), permanent magnet(3), grounding through hole(5), cover board(6)With circulator bottom plate(7), wherein the gyromagnet substrate(2)Embedded in silicon substrate cavity(1)It is interior, the circulator bottom plate(7)Positioned at silicon substrate cavity(1)Bottom, cover board(6)Positioned at silicon substrate cavity(1)Surface, the permanent magnet(3)Positioned at cover board(6)Top, the grounding through hole(5)In silicon substrate cavity(1)Upper symmetrical, the silicon substrate cavity(1)Surface is provided with circuit, the circuit and silicon substrate cavity(1)Using mating hole(4)Carry out transition;The circulator of the utility model, device size greatly reduce, and realize the belt performance in 17.8-26.6 ghz bands, and the circulator power capacity magnitude of the utility model improves an order of magnitude compared with microstrip structure.

Description

Three holes ground connection minimizes quasi- SIW circulators
Technical field
The utility model is related to microwave device fields, more particularly to a kind of three holes ground connection to minimize quasi- SIW circulators.
Background technology
Substrate type circulator is a kind of important basic device in microwave engineering, is the indispensable element of T/R components, wide It is general to be applied in the various civilian, military equipments such as civil telecommunications, microwave measurement, radar, communication, electronic countermeasure, aerospace, Signal directional transmissions, transmission duplex, isolation signals, the effect for protecting backing system are primarily served in equipment.
The transmission mode of traditional SIW circulator electromagnetic waves is similar to waveguide, is propagated in a similar waveguide cavity.Gold Categoryization through-hole is the indispensable structure of SIW circulators.Plated-through hole primarily serves the effect of simulation wave guide wall, and electromagnetic wave is constrained In wave guide wall, propagated in medium.
Traditional SIW devices, especially circulator, isolator are put english the structure of magnetic substrate using substrate dielectric, gyromagnet The trepanning of substrate destroys the integrality of dielectric surface circuit, for high-frequency microwave device, circuit it is imperfect to electromagnetic wave Transmission influences obviously, to limit the promotion of device performance.
Traditional SIW circulator structures type is as shown in Figs. 1-3, principle be by two rows of metallization VIAs (square hole or Circular hole) wave-guide cavity wave broadside structure is constructed, dielectric substrate thickness constructs waveguide narrow side structure, realizes the SIW transmission knots of electromagnetic wave Structure.Fig. 1 is to construct wave guide wall broadside structure using two rows of staggeredly metallization circular holes, and Fig. 2 is to be constructed using single metallization VIA Waveguide broadside structure, Fig. 3 are to place three metallization in center interface on the basis of single metallization VIA constructs waveguiding structure Hole is improving circulator performance;
Traditional substrate type circulator technical problem and defect are mainly reflected in the following aspects:
1. no matter how surface circuit changes traditional SIW devices, how mating structure designs, and plated-through hole is that it must Standby structure.Plated-through hole constitutes a similar waveguide cavity for electromagnetic transmission in substrate, is limited by microwave wavelength, gold The spacing diminution space of categoryization through-hole is limited, causes device size larger.In general, K-band SIW circulator planar dimensions are in 7mm* 7mm or more, wideband structural size bigger;
2. plated-through hole increases processing cost and process risk since via is more in technique;
3. traditional micro-strip device is since electromagnetic wave is propagated on surface circuit, the power capacity of device is small.In general, K waves Section microstrip circulator power capacity is in several W or so;
4. tradition SIW devices and open cell type micro-strip device, ferrite hole destroy the integrality of surface circuit, influence device Performance, and miniaturization causes centre junction small, hole external circuit size is small, usually less than 1mm, and permanent magnet welding is difficult to realize.
Invention content
The purpose of this utility model is that a kind of three holes ground connection of offer minimizes quasi- SIW circulators, to solve above-mentioned ask Topic.
To achieve the goals above, the technical solution adopted in the utility model is such:A kind of three holes ground connection miniaturization Quasi- SIW circulators, including silicon substrate cavity, gyromagnet substrate, permanent magnet, grounding through hole, cover board and circulator bottom plate, wherein described For gyromagnet substrate in silicon substrate cavity, the circulator bottom plate is located at silicon substrate cavity bottom, and cover board is located at right over silicon substrate cavity, The permanent magnet is located above cover board, and the grounding through hole is symmetrical on silicon substrate cavity, the silicon substrate housing surface setting There are circuit, the circuit to carry out transition using mating hole with silicon substrate cavity;The grounding through hole is three.
The utility model combines the structure type of tradition SIW circulators and process means to realize, using silicon as substrate material Material carries out three-dimension process in conjunction with MEMS technology to circulator cavity.In principle analysis and design phase, creatively introduce Quasi- SIW technologies replace traditional metallization through-hole with metalized ground through-hole, eliminate the metallization wave guide wall in dielectric cavity body, The transmission mode for changing electromagnetic wave makes quasi- SIW circulators that can realize that the performance of traditional SIW circulators significantly reduces device again Part size.
Quasi- SIW technologies can be widely applied to similar microwave device, play the role of instead of SIW devices, the shape of grounding through hole Shape, size can carry out matched design according to frequency range and surface circuit, to reach optimum performance.
Compared with prior art, the utility model has the advantage of:The utility model is replaced using the structure that three holes are grounded The plated-through hole of traditional SIW circulators, advantage are:(1)Change tradition SIW circulators electromagnetic wave to propagate in dielectric cavity body Pattern;(2)Achieve the purpose that reduce device size, the K-band broadband circulator planar dimension of the utility model is only 5mm* 5mm, compares tradition SIW circulators, and volume greatly reduces;(3)It is real by the matching of metalized ground through-hole and surface circuit Reach the target that minification keeps power while existing device performance;(4)Add the lid of attached circuitous pattern in medium housing surface Plate makes surface circuit restore complete to fill up the vacancy of circuit;(5)Keep permanent magnet welding procedure operable, improves reliable Property;(6)The circulator of the utility model realizes the belt performance in 17.8-26.6 ghz bands, the ring of the utility model Row device power capacity magnitude is compared with microstrip structure(Only several W)Promote an order of magnitude.
Description of the drawings
Fig. 1-3 is tradition SIW circulator structures;
Fig. 4 is the electrical block diagram before the quasi- uncapped plate of SIW circulators of the utility model embodiment;
Fig. 5 is that the quasi- SIW circulators of the utility model embodiment are capped the electrical block diagram after plate;
Dimensional structure diagram after the quasi- SIW circulators capping plate of Fig. 6 the utility model embodiments;
Fig. 7 is the mating hole dimensional structure diagram in Fig. 6;
Fig. 8 is the return loss value of the quasi- SIW circulators of the utility model embodiment;
Fig. 9 is the loss value of the quasi- SIW circulators of the utility model embodiment;
Figure 10 is the separation number of the quasi- SIW circulators of the utility model embodiment.
In figure:1, silicon substrate cavity;2, gyromagnet substrate;3, permanent magnet, 4, mating hole;5, grounding through hole;6, cover board;7, it goes in ring Device bottom plate;
A, SIW body structure surfaces circuit;B, gyromagnetic ferrite substrate;C, permanent magnet;D, silicon substrate is microstrip-fed;E, SIW structures Metal throuth hole, f, cavity;G, circulator bottom plate.
Specific implementation mode
Below in conjunction with attached drawing, the utility model is described in further detail.
Embodiment:
Referring to Fig. 1, a kind of quasi- SIW circulators of three holes ground connection miniaturization, including silicon substrate cavity 1, gyromagnet substrate 2, permanent magnet 3, grounding through hole 5, cover board 6 and circulator bottom plate 7, wherein the gyromagnet substrate 2 is in silicon substrate cavity 1, the circulator bottom Plate 7 is located at 1 bottom of silicon substrate cavity, and cover board 6 is located at right over silicon substrate cavity 1, and the permanent magnet 3 is located at 6 top of cover board, described to connect Ground through-hole 5 is symmetrical on silicon substrate cavity 1, and 1 surface of silicon substrate cavity is provided with circuit, the circuit and institute's silicon substrate cavity 1 carries out transition using mating hole 4, and concrete structure is as shown in fig. 7, the grounding through hole 5 of the present embodiment is three;The present embodiment Circuit structure before the quasi- uncapped plate of SIW circulators is as shown in figure 4, the quasi- SIW circulators of the present embodiment are capped the circuit after plate Structure as shown in figure 5, the present embodiment quasi- SIW circulators capping plate after stereochemical structure as shown in fig. 6, the present embodiment standard The S parameter simulation result of SIW circulators is shown in that Fig. 8-10, wherein Fig. 8 are the return loss value of circulator, and Fig. 9 is the damage of circulator Consumption value, Figure 10 are the separation number of circulator.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this All any modification, equivalent and improvement etc., should be included in the utility model made by within the spirit and principle of utility model Protection domain within.

Claims (1)

1. a kind of three holes ground connection minimizes quasi- SIW circulators, it is characterised in that:Including silicon substrate cavity(1), gyromagnet substrate(2), forever Magnet(3), grounding through hole(5), cover board(6)With circulator bottom plate(7), wherein the gyromagnet substrate(2)Embedded in silicon substrate cavity (1)It is interior, the circulator bottom plate(7)Positioned at silicon substrate cavity(1)Bottom, cover board(6)Positioned at silicon substrate cavity(1)Surface, it is described Permanent magnet(3)Positioned at cover board(6)Top, the grounding through hole(5)It is three, the grounding through hole(5)In silicon substrate cavity(1)On It is symmetrical, the silicon substrate cavity(1)Surface is provided with circuit, the circuit and silicon substrate cavity(1)Using mating hole(4)It carries out Transition.
CN201820305969.3U 2018-03-06 2018-03-06 Three holes ground connection minimizes quasi- SIW circulators Withdrawn - After Issue CN207852878U (en)

Priority Applications (1)

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CN201820305969.3U CN207852878U (en) 2018-03-06 2018-03-06 Three holes ground connection minimizes quasi- SIW circulators

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Application Number Priority Date Filing Date Title
CN201820305969.3U CN207852878U (en) 2018-03-06 2018-03-06 Three holes ground connection minimizes quasi- SIW circulators

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108306084A (en) * 2018-03-06 2018-07-20 西南应用磁学研究所 Three holes ground connection minimizes quasi- SIW circulators

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108306084A (en) * 2018-03-06 2018-07-20 西南应用磁学研究所 Three holes ground connection minimizes quasi- SIW circulators
CN108306084B (en) * 2018-03-06 2023-09-12 西南应用磁学研究所 Three-hole grounding miniaturized quasi-SIW circulator

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Granted publication date: 20180911

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