CN207842212U - Sapphire high high rigidity composite plate and electronic touch product thoroughly - Google Patents
Sapphire high high rigidity composite plate and electronic touch product thoroughly Download PDFInfo
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- CN207842212U CN207842212U CN201721273386.9U CN201721273386U CN207842212U CN 207842212 U CN207842212 U CN 207842212U CN 201721273386 U CN201721273386 U CN 201721273386U CN 207842212 U CN207842212 U CN 207842212U
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Abstract
The utility model is related to a kind of sapphire high high rigidity composite plate and electronic touch products thoroughly.The high high rigidity composite plate thoroughly of the sapphire includes transparent substrate and protective film; protective film includes functional layer and the alumina layer for being formed in function layer surface; functional layer includes alternately stacked silicon dioxide layer and niobium pentaoxide layer; transparent substrate has opposite first surface and second surface, and protective film covers at least one of first surface and second surface and alumina layer is located at side of the functional layer far from transparent substrate.The high high rigidity composite plate thoroughly of above-mentioned sapphire has both anti-reflection and stiffened effect.
Description
Technical field
The utility model is related to a kind of sapphire high high rigidity composite plate and electronic touch products thoroughly.
Background technology
With the continuous development of electronics and information industry, more and more electronic touch products, mobile phone, number are emerged in the market
The screen of the electronic touch products such as code camera, laptop and tablet computer is highly prone to scraping for external force during use
It rubs and scratch occurs, not only influence the beauty of product, or even the normal use of product can be influenced.
Currently, mainly avoiding screen from being drawn by the way of attaching protective film in the screen surface in electronic touch product
Wound.Common protective film is mainly plastic adhesive film or tempering film, and the hardness of plastic adhesive film is poor, is easy to be left by outer force effect
Scratch, or even the screen of electronic touch product can be injured, influence the normal use of product.Although the hardness of tempering film is better than plastics
Pad pasting, but as electronic touch product constantly upgrades and is widely used, it is also higher and higher to the hardness requirement of tempering film, it is existing
Tempering film cannot meet the requirement to protecting film hardness of existing electronic touch product, meanwhile, the increasing of existing tempering film
Saturating effect is poor, and thickness is thicker, influences the touch sensitivity of the screen of electronic touch product.
Utility model content
Based on this, it is necessary to provide and a kind of have both anti-reflection and stiffened effect sapphire high high rigidity composite plate and electronics thoroughly
Touch-control product.
A kind of high high rigidity composite plate thoroughly of sapphire, including transparent substrate and protective film, the protective film include functional layer
And it is formed in the alumina layer of the function layer surface, the functional layer includes alternately stacked silicon dioxide layer and five oxidations two
There is opposite first surface and second surface, the protective film to cover the first surface and institute for niobium layer, the transparent substrate
It states at least one of second surface and the alumina layer is located at side of the functional layer far from the transparent substrate.
The high high rigidity composite plate thoroughly of above-mentioned sapphire is at least one of the first surface of transparent substrate and second surface
Protective film is formed, protective film includes functional layer and the alumina layer for being formed in function layer surface, and functional layer includes alternately stacked
Silicon dioxide layer and niobium pentaoxide layer, by three kinds of silica, niobium pentaoxide and aluminium oxide materials to the destructive of light
Interference is so that the high high rigidity composite plate thoroughly of sapphire has higher transmissivity.Meanwhile silica and niobium pentaoxide are deposited
Making the high non-aging yellowing of high rigidity composite plate thoroughly of the sapphire, and transmitance small to the reflection of light is high, image clearly.Again
Since the high high rigidity composite plate thoroughly of the sapphire includes alumina layer, aluminium oxide as ruby and sapphire main component,
Have many advantages, such as that high temperature resistant fire resisting, good mechanical property and hardness are strong, and coefficient of thermal expansion is small, is not easy temperature distortion.Through testing
Card, only sequentially forms functional layer on one of the first surface of transparent substrate and second surface and alumina layer obtains
High transmissivity of the high rigidity composite plate in 420nm~670nm thoroughly of sapphire reaches 94% or more, in the first surface of transparent substrate
And the high high rigidity composite plate thoroughly of sapphire that second surface sequentially forms functional layer and alumina layer obtains 420nm~
The transmissivity of 670nm reaches 98% or more, and the hardness of the high high rigidity composite plate thoroughly of above two sapphire reaches 9H~10H, through 9H
10000 frictions of the pencil under 1 kilogram of pressure are scraped through 100 times of blade of carving knife under 1 kilogram of pressure without scratch without scuffing
And nothing falls off, and will not leave behind any trace in the high high rigidity composite surface thoroughly of sapphire.The high saturating high rigidity of above-mentioned sapphire
Composite plate can not only be such that the image of electronic touch product is more clear, moreover it is possible to prevent the screen surface of electronic touch product from being drawn
Wound, and it is avoided that the high high rigidity composite plate thoroughly of sapphire is being stored and is being scratched in transportational process.In addition, the sapphire is high thoroughly high
The transmissivity of hardness composite plate is higher and hardness is strong, also can be as the protective film of vehicle glass.Therefore, above-mentioned sapphire is high thoroughly high
Hardness composite plate has both anti-reflection and stiffened effect, disclosure satisfy that the demand in market.
The protective film covers the first surface and the second surface in one of the embodiments,.
The functional layer includes the first niobium pentaoxide layer, the silica stacked gradually in one of the embodiments,
Layer and the second niobium pentaoxide layer.
The thickness of the first niobium pentaoxide layer is 16nm~18nm in one of the embodiments,.
The thickness of the silicon dioxide layer is 20nm~22nm in one of the embodiments,.
The thickness of the second niobium pentaoxide layer is 73nm~75nm in one of the embodiments,.
The thickness of the alumina layer is 72nm~74nm in one of the embodiments,.
The transparent substrate is plastic, transparent substrate or glass transparent substrate in one of the embodiments,.
The thickness of the transparent substrate is 0.2mm~10mm in one of the embodiments,.
A kind of electronic touch product, including screen cover board, the screen cover board are described in any one of above-described embodiment
The high high rigidity composite plate thoroughly of sapphire.
Description of the drawings
Fig. 1 is the structural schematic diagram of the high high rigidity composite plate thoroughly of the sapphire of an embodiment；
Fig. 2 is the structural schematic diagram of the high high rigidity composite plate thoroughly of the sapphire of another embodiment.
Specific implementation mode
The utility model is more fully retouched below with reference to relevant drawings for the ease of understanding the utility model,
It states.The preferred embodiment of the utility model is given in attached drawing.But the utility model can come in many different forms
It realizes, however it is not limited to embodiment described herein.Make to the utility model on the contrary, purpose of providing these embodiments is
The understanding of disclosure is more thorough and comprehensive.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement are for illustrative purposes only.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with the technology for belonging to the utility model
The normally understood meaning of technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.
As shown in Figure 1, the electronic touch product of an embodiment includes the high high rigidity composite plate 10 thoroughly of sapphire.Sapphire
High high rigidity composite plate 10 thoroughly is the screen cover board of electronic touch product, and the screen for protecting electronic touch product avoids electricity
The screen surface of sub- touch-control product is scratched.Certainly, it should be noted that electronic touch product further includes other necessary compositions
Part, such as screen, chip and battery etc..Wherein, electronic touch product is tablet computer, mobile phone, digital camera or notebook
Computer.It is appreciated that electronic touch product is not limited to the said goods, other products with screen are can also be.
The high high rigidity composite plate 10 thoroughly of sapphire includes transparent substrate 100 and protective film 200, and protective film 200 is covered in
The surface of bright substrate 100.Transparent substrate 100 is the main body of the high high rigidity composite plate 10 thoroughly of sapphire.Transparent substrate 100 has phase
To first surface 110 and second surface 120.
Transparent substrate 100 is plastic, transparent substrate or glass transparent substrate in one of the embodiments,.
Preferably, glass transparent substrate in the average transmittance of 420nm~670nm up to 91% or more.
The thickness of transparent substrate 100 is 0.2mm~10mm in one of the embodiments,.
Protective film 200 covers at least one of first surface 110 and second surface 120.In the shown embodiment, it protects
Cuticula 200 is two, and two protective films 200 are covered each by first surface 110 and second surface 120.Below to be laminated in
The structure of protective film 200 is illustrated for the protective film 200 on one surface 110.
Also referring to Fig. 2, protective film 200 includes functional layer 210 and the alumina layer for being formed in 210 surface of functional layer
220.Functional layer 210 includes the first niobium pentaoxide layer 212, silicon dioxide layer 214 and the second niobium pentaoxide stacked gradually
Layer 216.Certainly, it should be noted that the number of plies of functional layer 210 is not limited to three layers, or four layers, can also be five layers,
It can be arranged as required to, as long as ensureing that niobium pentaoxide layer is arranged alternately with silicon dioxide layer.
The material of first niobium pentaoxide layer 212 is niobium pentaoxide (Nb2O5), and it is covered in first surface 110.
The thickness of the first niobium pentaoxide layer 212 is 16nm~18nm in one of the embodiments,.
Preferably, the thickness of the first niobium pentaoxide layer 212 is 17nm.
The material of silicon dioxide layer 214 is silica (SiO2), and the first niobium pentaoxide layer 212 is laminated in far from
The side on one surface 110.
The thickness of silicon dioxide layer 214 is 20nm~22nm in one of the embodiments,.
Preferably, the thickness of silicon dioxide layer 214 is 21nm.
The material of second niobium pentaoxide layer 216 is niobium pentaoxide (Nb2O5, and it is separate to be laminated in silicon dioxide layer 214
The side of first 212 layers of niobium pentaoxide layer.
The thickness of the second niobium pentaoxide layer 216 is 73nm~75nm in one of the embodiments,.
Preferably, the thickness of the second niobium pentaoxide layer 216 is 74nm.
The material of alumina layer 220 is aluminium oxide (Al2O3), and it is covered in the surface of functional layer 210.Specifically, aluminium oxide
Layer 220 is covered in the second side of the niobium pentaoxide layer 216 far from silicon dioxide layer 214.Aluminium oxide is as ruby and blue treasured
The main component of stone has many advantages, such as that high temperature resistant fire resisting, good mechanical property and hardness are strong, is conducive to enhance the high height thoroughly of sapphire firmly
The hardness of composite plate 10 is spent, meanwhile, the good heat conductivity of aluminium oxide is easy to radiate, and can promote electronic touch product heat
It distributes.In addition, the coefficient of thermal expansion of aluminium oxide is small, it is not easy temperature distortion, can ensure the high high rigidity composite plate 10 thoroughly of sapphire
Service life.
The thickness of alumina layer 220 is 72nm~74nm in one of the embodiments,.
Preferably, the thickness of alumina layer 220 is 73nm.
The high high rigidity composite plate 10 thoroughly of above-mentioned sapphire has at least the following advantages：
The high high rigidity composite plate 10 thoroughly of above-mentioned sapphire is in the first surface 110 and second surface 120 of transparent substrate 100
At least one formation protective film 200, protective film 200 includes functional layer 210 and is formed in the alumina layer on 210 surface of functional layer
220, functional layer 210 include alternately stacked silicon dioxide layer and niobium pentaoxide layer, by silica, niobium pentaoxide and
Three kinds of materials of aluminium oxide make the high high rigidity composite plate 10 thoroughly of sapphire have higher transmissivity the destructive interference of light.Together
When, the presence of silica and niobium pentaoxide makes the high non-aging yellowing of high rigidity composite plate thoroughly of the sapphire, to light
It is high to reflect small and transmitance, image clearly.Again since the high high rigidity composite plate 10 thoroughly of the sapphire includes alumina layer 220, oxygen
Change aluminium as ruby and sapphire main component, have many advantages, such as that high temperature resistant fire resisting, good mechanical property and hardness are strong, and heat
The coefficient of expansion is small, is not easy temperature distortion.Experiments verify that only in the first surface 110 of transparent substrate 100 and second surface 120
One of on sequentially form functional layer 210 and the high high rigidity composite plate 10 thoroughly of sapphire that alumina layer 220 obtains exists
The transmissivity of 420nm~670nm reaches 94% or more, transparent substrate 100 first surface 110 and second surface 120 according to
The high high rigidity composite plate 10 thoroughly of sapphire that secondary formation functional layer 210 and alumina layer 220 obtain is in the saturating of 420nm~670nm
The rate of penetrating reaches 98% or more, and the hardness of the high high rigidity composite plate 10 thoroughly of above two sapphire reaches 9H~10H, through 9H pencils 1
10000 frictions under kilogram pressure are scraped without scratching and without de- through 100 times of blade of carving knife under 1 kilogram of pressure without scuffing
It falls, and any trace is will not leave behind on 10 surface of the high high rigidity composite plate thoroughly of sapphire.The high high rigidity thoroughly of above-mentioned sapphire is compound
Plate 10 can not only prevent that the screen surface of electronic touch product is scratched and the image of electronic touch product is more clear
It is clear, moreover it is possible to the high high rigidity composite plate 10 thoroughly of sapphire be avoided to store and be scratched in transportational process.In addition, the sapphire is high thoroughly
The transmissivity of high rigidity composite plate 10 is higher and hardness is strong, also can be as the protective film of vehicle glass.Therefore, above-mentioned sapphire is high
Saturating high rigidity composite plate 10 has both anti-reflection and stiffened effect, disclosure satisfy that the demand in market.
Above-mentioned electronic touch product has at least the following advantages：
For above-mentioned electronic touch product with the high high rigidity composite plate 10 thoroughly of above-mentioned sapphire for screen cover board, above-mentioned sapphire is high
The hardness of saturating high rigidity composite plate 10 is higher, and the screen surface of electronic touch product can be prevented to be scratched, meanwhile, the sapphire
The transmissivity of high high rigidity composite plate 10 thoroughly is higher so that the image of electronic touch product is more clear, and is not interfered with to image
Sensory effects.
Certainly, it should be noted that one alumina layer 220 being laminated in first surface 110 and second surface 120
It can be omitted.When one of alumina layer 220 omits, another second in first surface 110 and second surface 120
Niobium pentaoxide layer 216 is covered in the screen surface of electronic touch product, equally can also protect the screen of electronic touch product,
The screen surface of electronic touch product is avoided to be scratched.
Certainly, it should be noted that the quantity of protective film 200 is not limited to two, or one.When protective film 200
Quantity when being one, a protective film 200 is covered in one in first surface 110 and second surface 120, and first surface
110 and second surface 120 in another be covered on the screen of electronic touch product.
The high rigidity composite plate 10 thoroughly high to above-mentioned sapphire by taking the protective film 200 for being laminated in first surface 110 as an example below
Preparation method illustrate.
The preparation method of the high high rigidity composite plate 10 thoroughly of above-mentioned sapphire, includes the following steps：
Step S110 is dried after cleaning transparent substrate 100.
Step S120 deposits the first niobium pentaoxide layer 212 in the first surface 110 of transparent substrate 100.
Specifically, it in the mixed gas atmosphere of argon gas and oxygen, using niobium as target, is deposited on first surface 110
First niobium pentaoxide layer 212.
Depositional mode is magnetron sputtering or electron beam evaporation plating in one of the embodiments,.
Preferably, depositional mode is magnetron sputtering.Because magnetron sputtering not will produce higher temperature in plated film, avoid
There is the problem of secondary sputtering, ensure that the quality of film layer, while the ionization level of gas is higher, the rate of plated film is faster.
The equipment deposited in one of the embodiments, is magnetron sputtering coater.The thickness of first niobium pentaoxide layer 212
Degree is controlled by the film thickness gauge in magnetron sputtering coater, and work can be automatically stopped after reaching predetermined thickness.
Preferably, the target of magnetron sputtering coater is niobium.
Preferably, the frequency of magnetron sputtering power supply is 40KHz.
Preferably, the flow of the argon gas of magnetron sputtering coater is 100sccm~200sccm.
Preferably, the flow of the oxygen of magnetron sputtering coater is 60sccm~100sccm.
Step S130, in side deposited silicon dioxide layer 214 of the first niobium pentaoxide layer 212 far from first surface 110.
Specifically, in the mixed gas atmosphere of argon gas and oxygen, using silicon as target, in the first niobium pentaoxide layer
The 212 side deposited silicon dioxide layers 214 far from first surface 110.
Depositional mode is magnetron sputtering or electron beam evaporation plating in one of the embodiments,.
Preferably, depositional mode is magnetron sputtering.Because magnetron sputtering not will produce higher temperature in plated film, avoid
There is the problem of secondary sputtering, ensure that the quality of film layer, while the ionization level of gas is higher, the rate of plated film is faster.
The equipment deposited in one of the embodiments, is magnetron sputtering coater.The thickness of silicon dioxide layer 214 is by magnetic
The film thickness gauge control in sputter coating machine is controlled, work can be automatically stopped after reaching predetermined thickness.
Preferably, the target of magnetron sputtering coater is silicon.
Preferably, the frequency of magnetron sputtering power supply is 40KHz.
Preferably, the flow of the argon gas of magnetron sputtering coater is 100sccm~200sccm.
Preferably, the flow of the oxygen of magnetron sputtering coater is 60sccm~100sccm.
Step S140, in side deposition two five oxidation two of the silicon dioxide layer 214 far from the first niobium pentaoxide layer 212
Niobium layer 216.
Specifically, separate in silicon dioxide layer 214 using niobium as target in the mixed gas atmosphere of argon gas and oxygen
The side of first niobium pentaoxide layer 212 deposits the second niobium pentaoxide layer 216.
Depositional mode is magnetron sputtering or electron beam evaporation plating in one of the embodiments,.
Preferably, depositional mode is magnetron sputtering.Because magnetron sputtering not will produce higher temperature in plated film, avoid
There is the problem of secondary sputtering, ensure that the quality of film layer, while the ionization level of gas is higher, the rate of plated film is faster.
The equipment deposited in one of the embodiments, is magnetron sputtering coater.The thickness of second niobium pentaoxide layer 216
Degree is controlled by the film thickness gauge in magnetron sputtering coater, and work can be automatically stopped after reaching predetermined thickness.
Preferably, the target of magnetron sputtering coater is niobium.
Preferably, the frequency of magnetron sputtering power supply is 40KHz.
Preferably, the flow of the argon gas of magnetron sputtering coater is 100sccm~600sccm.
Preferably, the flow of the oxygen of magnetron sputtering coater is 60sccm~100sccm.
Step S150, in the second niobium pentaoxide layer 216 far from 214 side aluminum oxide layer 220 of silicon dioxide layer.
Specifically, in the mixed gas atmosphere of argon gas and oxygen, in the second niobium pentaoxide layer 216 far from silica
214 side aluminum oxide layer 220 of layer.
Depositional mode is magnetron sputtering or electron beam evaporation plating in one of the embodiments,.
Preferably, depositional mode is magnetron sputtering.Because magnetron sputtering not will produce higher temperature in plated film, avoid
There is the problem of secondary sputtering, ensure that the quality of film layer, while the ionization level of gas is higher, the rate of plated film is faster.
The equipment deposited in one of the embodiments, is magnetron sputtering coater.The thickness of alumina layer 220 is by magnetic control
Film thickness gauge control in sputter coating machine, work can be automatically stopped after reaching predetermined thickness.
Preferably, the target of magnetron sputtering coater is aluminium.
Preferably, the frequency of magnetron sputtering power supply is 50Hz.
Preferably, the flow of the argon gas of magnetron sputtering coater is 100sccm~200sccm.
Preferably, the flow of the oxygen of magnetron sputtering coater is 60sccm~100sccm.
The preparation method of the high high rigidity composite plate thoroughly of above-mentioned sapphire is simple for process, is suitble to industrialized production.
It is specific embodiment part below：
Embodiment 1
The preparation process of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is as follows：
(1) it using niobium as target, in 40KHz, the argon gas and 60sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
Penetrate the first niobium pentaoxide layer that the first surface in the glass transparent substrate of 10mm is coated with 16nm.
(2) it using silicon as target, in 40KHz, the argon gas and 60sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the silicon dioxide layer of 20nm in the first side of the niobium pentaoxide layer far from first surface.
(3) it using niobium as target, in 40KHz, the argon gas and 60sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the second niobium pentaoxide layer of 73nm in side of the silicon dioxide layer far from the first niobium pentaoxide layer.
(4) using aluminium as plank, in 50Hz, the argon gas and 60sccm oxygen mix atmosphere of 100sccm, using magnetron sputtering
The alumina layer of 72nm is coated with to get high thoroughly high hard to sapphire in the second side of the niobium pentaoxide layer far from silicon dioxide layer
Spend composite plate.
The structure of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is：Glass transparent substrate (10mm)/the one or five oxygen
Change two niobium layers (16nm)/silicon dioxide layer (20nm)/second niobium pentaoxide layer (73nm)/alumina layer (72nm) (above-mentioned knot
"/" represents stacking in structure).
Embodiment 2
The preparation process of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is as follows：
(1) it using niobium as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
Penetrate the first niobium pentaoxide layer that the second surface in the plastic, transparent substrate of 0.5mm is coated with 18nm.
(2) it using silicon as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the silicon dioxide layer of 22nm in the first side of the niobium pentaoxide layer far from first surface.
(3) it using niobium as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the second niobium pentaoxide layer of 75nm in side of the silicon dioxide layer far from the first niobium pentaoxide layer.
(4) it using aluminium as plank, in 50Hz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the alumina layer of 74nm in the second side of the niobium pentaoxide layer far from silica to get high thoroughly high hard to sapphire
Spend composite plate.
The structure of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is：Plastic, transparent substrate (0.5mm)/the one or five oxygen
Change two niobium layers (18nm)/silicon dioxide layer (22nm)/second niobium pentaoxide layer (75nm)/alumina layer (74nm) (above-mentioned knot
"/" represents stacking in structure).
Embodiment 3
The preparation process of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is as follows：
(1) it using niobium as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 200sccm, is splashed using magnetic control
Penetrate the first niobium pentaoxide layer that first surface and second surface in the glass transparent substrate of 0.28m are coated with 16nm.
(2) it using silicon as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 200sccm, is splashed using magnetic control
It penetrates and is coated with the silicon dioxide layer of 20nm on the surface of two the first niobium pentaoxide layers.
(3) it using niobium as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 200sccm, is splashed using magnetic control
It penetrates and is coated with the second niobium pentaoxide layer of 73nm on the surface of two silicon dioxide layers.
(4) it using aluminium as plank, in 50Hz, the argon gas and 100sccm oxygen mix atmosphere of 200sccm, is splashed using magnetic control
The surface for penetrating a second niobium pentaoxide layer wherein is coated with the alumina layer of 72nm to get multiple to the high high rigidity thoroughly of sapphire
Plywood.
The structure of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is：Alumina layer (72nm)/the two or five oxidation two
Niobium layer (73nm)/silicon dioxide layer (20nm)/first niobium pentaoxide layer (16nm)/glass transparent substrate (0.28mm)/first
("/" represents niobium pentaoxide layer (16nm)/silicon dioxide layer (20nm)/second niobium pentaoxide layer (73nm) in above structure
Stacking).
Embodiment 4
The preparation process of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is as follows：
(1) it using niobium as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
Penetrate the first niobium pentaoxide layer that first surface and second surface in the glass transparent substrate of 0.2mm are coated with 18nm.
(2) it using silicon as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the silicon dioxide layer of 22nm on the surface of two the first niobium pentaoxide layers.
(3) it using niobium as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the second niobium pentaoxide layer of 75nm on the surface of two silicon dioxide layers.
(4) it using aluminium as plank, in 50Hz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the alumina layer of 74nm on the surface of two the second niobium pentaoxide layers to get compound to the high high rigidity thoroughly of sapphire
Plate.
The structure of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is：Alumina layer (74nm)/the two or five oxidation two
Niobium layer (75nm)/silicon dioxide layer (22nm)/first niobium pentaoxide layer (18nm)/glass transparent substrate (0.2mm)/the one or five
It is (above-mentioned to aoxidize two niobium layers (18nm)/silicon dioxide layer (22nm)/second niobium pentaoxide layer (75nm)/alumina layer (74nm)
"/" represents stacking in structure).
Embodiment 5
The preparation process of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is as follows：
(1) it using niobium as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
Penetrate the first niobium pentaoxide layer that first surface and second surface in the glass transparent substrate of 0.3mm are coated with 17nm.
(2) it using silicon as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the silicon dioxide layer of 21nm on the surface of two the first niobium pentaoxide layers.
(3) it using niobium as target, in 40KHz, the argon gas and 100sccm oxygen mix atmosphere of 100sccm, is splashed using magnetic control
It penetrates and is coated with the second niobium pentaoxide layer of 74nm on the surface of two silicon dioxide layers.
(4) using aluminium as plank, in 50Hz, the argon gas and 60sccm oxygen mix atmosphere of 100sccm, using magnetron sputtering
The alumina layer of 73nm is coated with to get compound to the high high rigidity thoroughly of sapphire on the surface of two the second niobium pentaoxide layers
Plate.
The structure of the high high rigidity composite plate thoroughly of the sapphire of the present embodiment is：Alumina layer (73nm)/the two or five oxidation two
Niobium layer (74nm)/silicon dioxide layer (21nm)/first niobium pentaoxide layer (17nm)/glass transparent substrate (0.3nm)/the one or five
It is (above-mentioned to aoxidize two niobium layers (17nm)/silicon dioxide layer (21nm)/second niobium pentaoxide layer (74nm)/alumina layer (73nm)
"/" represents stacking in structure).
The high high rigidity composite plate thoroughly of sapphire obtained using 1~embodiment of spectrophotometric determination embodiment 5 is in 420nm
The transmissivity of~670nm, the results are shown in Table 1.
The high high rigidity thoroughly of sapphire that heavy burden 1kg, pencil and the 1~embodiment of embodiment 5 that hardness is 9H are obtained is compound
Plate rubs 10000 times in 45 ° of speed with 0.5mm/s, and whether the high high rigidity composite surface thoroughly of observation sapphire has scuffing, ties
Fruit is shown in Table 1.
The high high rigidity thoroughly of sapphire obtained to 1~embodiment of embodiment 5 under 1 kilogram of pressure using blade of carving knife is compound
Plate scrapes 100 times, and whether the high high rigidity composite surface thoroughly of observation sapphire, which scrapes to injure, falls off, and the results are shown in Table 1.
Table 1
As it can be seen from table 1 the high high rigidity composite plate thoroughly of the obtained sapphire of embodiment 1 and embodiment 2 420nm~
The transmissivity of 670nm is all higher than 94%, and antireflective effect is preferable, and the high high rigidity thoroughly of the sapphire that 3~embodiment of embodiment 5 obtains is multiple
Plywood is all higher than 98% in the transmissivity of 420nm~670nm, and antireflective effect is splendid.Illustrate that the indigo plant of 1~embodiment of embodiment 5 is precious
The high high rigidity composite plate thoroughly of stone can ensure the clarity of the image of electronic touch product.Illustrate the indigo plant of 1~embodiment of embodiment 5
The high high rigidity composite plate thoroughly of jewel can ensure the clarity of the image of electronic touch product.Meanwhile 1~embodiment of embodiment 5
The high high rigidity composite plate thoroughly of obtained sapphire through 10000 frictions of the 9H pencils under 1 kilogram of pressure without scuffing, through cutter
100 scrapings of the piece under 1 kilogram of pressure show that the hardness of the high high rigidity composite plate thoroughly of sapphire is 9H without scratch and without falling off
~10H, can prevent that the screen surface of electronic touch product is scratched and the high high rigidity composite plate thoroughly of sapphire is being stored up
It deposits and is scratched in transportational process.Therefore, the high high rigidity composite plate thoroughly of above-mentioned sapphire has both anti-reflection and stiffened effect, Neng Gouman
The demand in sufficient market.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent range.It should be pointed out that for the common skill of this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of high high rigidity composite plate thoroughly of sapphire, which is characterized in that including transparent substrate and protective film, the protective film packet
Include functional layer and be formed in the alumina layer of the function layer surface, the functional layer include alternately stacked silicon dioxide layer and
Niobium pentaoxide layer, the transparent substrate have opposite first surface and second surface, the protective film covering described first
At least one of surface and the second surface and the alumina layer are located at the functional layer far from the transparent substrate
Side.
2. the high high rigidity composite plate thoroughly of sapphire according to claim 1, which is characterized in that described in the protective film covering
First surface and the second surface.
3. the high high rigidity composite plate thoroughly of sapphire according to claim 1, which is characterized in that the functional layer includes successively
The first niobium pentaoxide layer, silicon dioxide layer and the second niobium pentaoxide layer of stacking.
4. the high high rigidity composite plate thoroughly of sapphire according to claim 3, which is characterized in that first niobium pentaoxide
The thickness of layer is 16nm~18nm.
5. the high high rigidity composite plate thoroughly of sapphire according to claim 3, which is characterized in that the thickness of the silicon dioxide layer
Degree is 20nm~22nm.
6. the high high rigidity composite plate thoroughly of sapphire according to claim 3, which is characterized in that second niobium pentaoxide
The thickness of layer is 73nm~75nm.
7. the high high rigidity composite plate thoroughly of sapphire according to claim 1, which is characterized in that the thickness of the alumina layer
For 72nm~74nm.
8. the high high rigidity composite plate thoroughly of sapphire according to claim 1, which is characterized in that the transparent substrate is plastics
Transparent substrate or glass transparent substrate.
9. the high high rigidity composite plate thoroughly of sapphire according to claim 1, which is characterized in that the thickness of the transparent substrate
For 0.2mm~10mm.
10. a kind of electronic touch product, including screen cover board, which is characterized in that the screen cover board is claim 1~9 times
The high high rigidity composite plate thoroughly of sapphire described in one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721273386.9U CN207842212U (en) | 2017-09-29 | 2017-09-29 | Sapphire high high rigidity composite plate and electronic touch product thoroughly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721273386.9U CN207842212U (en) | 2017-09-29 | 2017-09-29 | Sapphire high high rigidity composite plate and electronic touch product thoroughly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207842212U true CN207842212U (en) | 2018-09-11 |
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ID=63426212
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|---|---|---|---|
| CN201721273386.9U Active CN207842212U (en) | 2017-09-29 | 2017-09-29 | Sapphire high high rigidity composite plate and electronic touch product thoroughly |
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| CN (1) | CN207842212U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113699484A (en) * | 2020-05-20 | 2021-11-26 | 深圳市万普拉斯科技有限公司 | Shell, coating process thereof and electronic equipment |
-
2017
- 2017-09-29 CN CN201721273386.9U patent/CN207842212U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113699484A (en) * | 2020-05-20 | 2021-11-26 | 深圳市万普拉斯科技有限公司 | Shell, coating process thereof and electronic equipment |
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