CN207727148U - Plasma chemical vapor deposition device - Google Patents
Plasma chemical vapor deposition device Download PDFInfo
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- CN207727148U CN207727148U CN201721720901.3U CN201721720901U CN207727148U CN 207727148 U CN207727148 U CN 207727148U CN 201721720901 U CN201721720901 U CN 201721720901U CN 207727148 U CN207727148 U CN 207727148U
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Abstract
The utility model is related to chemical vapor deposition fields, disclose a kind of plasma chemical vapor deposition device.In the utility model, the plasma chemical vapor deposition device, including anode, cathode and at least one adjusting circuit；It is connected with substrate on the anode；By adjusting the impedance for adjusting circuit, the voltage of the anode can be adjusted, to control bombarding energy of the plasma to the substrate, to improve the characteristic of substrate surface material, improves surface binding force.For traditional technology, the device of present embodiment is without being arranged multiple radio-frequency power supplies, you can realizes the adjusting to ion bombardment energy, enhances product performance, greatly reduce the cost of equipment and the complexity of equipment.
Description
Technical field
The utility model is related to chemical vapor deposition fields, more particularly to plasma chemical vapor deposition device.
Background technology
In plasma chemical vapor deposition equipment, reaction gas can be transformed into plasma under radio-frequency power supply effect
The nano-sized membrane needed is generated to carry out chemical reaction.And when preparing nano-material film, it generally requires to base material
It is pre-processed, common pretreatment includes plasma treatment, i.e. reaction gas is ionized into ion by radio-frequency power supply, is being pre-processed
When, reaction gas may be argon gas, oxygen, hydrogen.And in order to reach preferable pretreating effect, it needs to control ion bombardment base
The energy of bottom material, to improve the characteristic of substrate surface material, the quality for improving surface binding force, improving material.In addition,
In plasma chemical vapor deposition preparation process, reaction gas is silane etc., and ion is ionized to when reaction gas starts, is passed through
The bombardment for controlling ion pair film forming face can more preferably improve the density and release stress of film.
But since the flux of ion is determined by the RF energy being passed through, ion energy is determined by the size of anode voltage
It is fixed.And for conventional plasma chemical vapor depsotition equipment, voltage and RF energy are often positive relationship, i.e. radio frequency energy
Amount is higher, and anode voltage is higher.That is, in traditional plasma chemical vapor deposition equipment, in same radio frequency work(
Under rate, ionic flux and energy are not independent controls, plasma chemical vapor deposition equipment do not have be independently adjusted etc. from
The function of sub- bombarding energy.And in order to realize the adjusting to ion bombardment energy, it generally requires and uses multiple frequency RF sources,
The cost and equipment complexity of plasma chemical vapor deposition device can be increased in this way.
Therefore, the cost of plasma chemical vapor deposition equipment how is reduced, and makes plasma chemical vapor deposition equipment
Have the function of being adjusted to ion bombardment energy, is our problems to be solved at present.
Utility model content
The utility model embodiment is designed to provide a kind of plasma chemical vapor deposition device, which passes through
Adjusting circuit is added, realizes the adjusting to anode voltage, to control the bombarding energy of ion, by changing ion bombardment energy
Amount improves the characteristic of substrate surface material, improves surface binding force.
In order to solve the above technical problems, the embodiment of the utility model provides a kind of plasma chemical vapor deposition dress
It sets, including anode, cathode and at least one adjusting circuit；It is connected with substrate on the anode；By adjusting the adjusting circuit
Impedance, the voltage of the anode can be adjusted, to control bombarding energy of the plasma to the substrate.
The utility model embodiment in terms of existing technologies, due to being provided with adjusting circuit in device, by changing
Impedance in modified tone economize on electricity road, can adjust anode voltage, and then the bombarding energy of the medium ion pair substrate of control device, change
The characteristic of kind substrate surface material, improves surface binding force.In terms of existing technologies, the device of present embodiment is without setting
Set multiple radio-frequency power supplies, you can realize that the adjusting to ion bombardment energy is greatly reduced and set while enhancing product performance
The complexity of standby cost and equipment.
In addition, the adjusting circuit includes an inductance and a capacitance；One end of the capacitance connects the anode, the other end
It is grounded by the inductance.
In addition, the cathode is connected to radio-frequency power supply by a match circuit.
In addition, there are two the adjusting circuits, the cathode and the anode are connect by an adjusting circuit respectively
Ground；The adjusting circuit includes a capacitance and the concatenated inductance of the capacitance.
In addition, described device further includes radio-frequency power supply, match circuit and transformer；The radio-frequency power supply passes through the matching
Circuit is connected to the input terminal of the transformer, and the output end of the transformer is connect with the cathode and an anode respectively.
In addition, | ZL1|>|ZC|, and | ZL1|>|ZC1|；Wherein, ZL1For the impedance of the inductance in the adjusting circuit, ZCFor
The impedance of coupled capacitor between the cathode and the anode, ZC1For the resistance with the concatenated capacitance of inductance in the adjusting circuit
It is anti-.
In addition, by adjusting the impedance for adjusting the capacitance in circuit, to adjust the voltage of the anode, with control etc.
The bombarding energy of substrate described in ion pair.
In addition, the substrate is fixed on by mechanical chuck or electrostatic chuck on the anode.
Description of the drawings
Fig. 1 is the circuit diagram according to the chemical vapor deposition unit of the utility model first embodiment；
Fig. 2 is the circuit diagram according to the chemical vapor deposition unit of the utility model second embodiment.
Specific implementation mode
It is new to this practicality below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer
Each embodiment of type is explained in detail.However, it will be understood by those skilled in the art that each in the utility model
In embodiment, in order to make the reader understand this application better, many technical details are proposed.But even if without these skills
Art details and various changes and modifications based on the following respective embodiments can also realize the application technical side claimed
Case.
The first embodiment of the utility model is related to a kind of plasma chemical vapor deposition device, it is specific as shown in Figure 1,
Including anode, cathode and at least one adjusting circuit, wherein be connected with substrate on anode, substrate passes through mechanical chuck or quiet
Electric card disk is fixed on anode, aufwuchsplate of the substrate as thin-film material.
It should be noted that the impedance by adjusting above-mentioned adjusting circuit, can adjust the voltage of anode, with control etc. from
Bombarding energy of the son to substrate.Present embodiment adjusts circuit with one and illustrates.
Specifically, in conjunction with shown in Fig. 1, the adjusting circuit include an inductance and a capacitance, one end jointed anode of capacitance,
The other end and inductance connection, the other end ground connection of inductance.Radio-frequency power supply is connect by match circuit with cathode.It is worth mentioning
It is that the match circuit described in present embodiment can be T-type match circuit, π shapes match circuit and L-type match circuit.In signal
Or electric energy is in transmission process extensively, to realize areflexia transmission or the maximum power transfer of signal, it is desirable that circuit connection is realized
Impedance matching, impedance matching is related to the overall performance of system, and uses above-mentioned match circuit, it can be achieved that matching, to make to be
System performance is optimal, and above-mentioned match circuit can all be found on the net.Furthermore, it is necessary to illustrate, in present embodiment,
Capacitance between electric pole plate and lower electrode plate (i.e. cathode plate and anode plate) is C, and it is C to adjust the capacitance in circuit1, the capacitance
The adjustable capacitor element of capacitance can be selected, it is L to adjust the inductance in circuit1, which can select the adjustable electricity of inductance value
Inductor component, impedance are respectively ZC1, ZL1, ZC, and | ZL1|>|ZC|, | ZL1|>|ZC1|。
In actual fabrication process, it is equipped with generally on electric pole plate (i.e. the cathode plate of present embodiment) and is used for reaction gas
The through-hole that body enters, in pretreatment stage, reaction gas can be argon gas, oxygen, hydrogen, in membrane material preparatory phase, instead
It is silane etc. to answer gas.Above-mentioned reaction gas is ionized into ion by radio-frequency power supply, and ion energy is determined by anode voltage, is not difficult to manage
Solution, when anode voltage minimum, the bombardment of ion pair substrate is minimum, and deposition velocity is most fast.
In the present embodiment, the capacitance C in circuit is adjusted by change1It is found that working as ZC1+ZL1=0, i.e. ZC1=-ZL1
When, capacitor and inductor impedance cancellation, anode impedance 0 can be equivalent to be grounded, at this point, anode voltage is 0, the bombardment of ion pair substrate
Minimum, deposition velocity are most fast.In addition work as ZC+ZC1+ZL1=0, ZC1=-ZC-ZL1, at this point, cathode voltage is minimum, and anode voltage
Drop is maximum, and ion energy is maximum at this time, and deposition velocity reduces.
It should be noted that in adjusting circuit, if the inductance selected is the adjustable inductance component of inductance value, by changing
Inductance L in modified tone economize on electricity road1, can also realize said effect.That is, adjusting inductance L1, make ZC1+ZL1=0, ZC1=-ZL1, electricity
Hold inductive impedance cancellation, anode impedance 0 can be equivalent to be grounded, at this point, anode voltage is 0, the bombardment of ion pair substrate is minimum,
Deposition velocity is most fast.In addition, working as ZC+ZC1+ZL1=0 and ZC1=-ZC-ZL1, at this point, cathode voltage is minimum, and anode voltage drop is most
Greatly, ion energy is maximum at this time, and deposition velocity reduces.But controllable impedance is industrially relatively difficult to achieve at present, and it is unstable to work
Fixed, it is advantageous to the adjustable capacitor elements of capacitance.
Therefore, present embodiment adds adjusting circuit in conventional apparatus, by selecting appropriate ZC1, ZL1, and adjust ZC1
And/or ZL1So that under the same power, the voltage of anode can also be conditioned radio-frequency power supply, realize the regulation and control of ion energy.
Adjust circuit be equivalent to device increases one adjusting dimension so that device under same radio-frequency power, can realize from
The independent control of sub- energy and ionic flux greatly reduces equipment cost it is not necessary that the radio-frequency power supply of multiple and different power is arranged.
To sum up, present embodiment adjusts the impedance in circuit due to being provided with adjusting circuit in device by change,
Anode voltage, and then the bombarding energy of the medium ion pair substrate of control device can be adjusted, the spy of substrate surface material is improved
Property, improve surface binding force.For traditional technology, it is not necessary that multiple radio-frequency power supplies are arranged, greatly reduce equipment at
The complexity of this and equipment, enhances product performance simultaneously.
The second embodiment of the utility model is related to a kind of plasma chemical vapor deposition device, second embodiment with
It is in place of the difference of first embodiment, there are two adjusting circuits in present embodiment, in conjunction with shown in Fig. 2.Cathode and an anode
Pass through an adjusting circuit ground respectively.
In the present embodiment, device includes radio-frequency power supply, match circuit and transformer, and radio-frequency power supply is by matching electricity
Road is connected to the input terminal of transformer, and the output end of transformer is connect with cathode and an anode respectively.It is noted that this implementation
Match circuit described in mode can be T-type match circuit, π shapes match circuit or L-type match circuit, in practical applications may be used
It is flexibly selected according to actual conditions, present embodiment is without limitation.It is real in signal or extensive electric energy in transmission process
The areflexia transmission of existing signal or maximum power transfer, it is desirable that circuit connection realizes that impedance matching, impedance matching are related to system
Overall performance, and use above-mentioned match circuit, it can be achieved that matching, to make system performance be optimal.
Also, the capacitance between electric pole plate and lower electrode plate (i.e. cathode plate and anode plate) be C, one adjust circuit with
Anode connects, which includes a capacitance and the concatenated inductance of capacitance.The capacitance of the capacitance is C1, and the capacitance is electricity
The adjustable capacitance of capacitance, it is L to adjust the inductance in circuit1, which can select the adjustable inductance of inductance value, impedance difference
Use ZC1, ZL1, ZC, | ZL1|>|ZC|, and | ZL1|>|ZC1|, preferably, | ZL1| it is more than 300 ohm.
In addition, cathode is connect with another adjusting circuit, which includes a capacitance and the concatenated inductance of capacitance.It should
The capacitance of capacitance is C2, and the capacitance is the adjustable capacitor element of capacitance, it is L to adjust the inductance in circuit2, which can
To select the adjustable inductance component of inductance value, impedance to use Z respectivelyC2, ZL2, | ZL2|>|ZC|, and | ZL2|>|ZC2|, as preferred
, | ZL2| it is more than 300 ohm.
It can be appreciated that by adjusting C1, C2, the effect for adjusting the ion bombardment energy of anode cathode may be implemented.Specific
In adjusting, work as ZC1=-ZL1, plus earth, anode voltage 0, the bombardment of ion pair substrate is minimum, and deposition velocity is most fast.Work as ZC2
=-ZL2, minus earth, ion bombardment energy maximum.
It should be noted that the structure of the above-mentioned adjusting circuit being connect with cathode and the adjusting circuit being connect with anode
Can be different, but need to meet ZC1+ZL1When=0, ion energy is minimum, to realize that the bombardment of ion pair substrate is minimum, deposition
It is fastest.
In addition, in adjusting circuit, if the inductance selected is the adjustable device of inductance value, electricity can be adjusted by changing
Inductance L in road1, L2.Specifically, working as ZC1=-ZL1, plus earth, anode voltage 0, to realize that ion pair substrate is bombarded
Minimum, deposition velocity are most fast；Work as ZC2=-ZL2, minus earth, ion bombardment energy maximum.
Therefore, in adjusting circuit, appropriate Z is selectedC1, ZL1, ZC2, ZL2, by adjusting ZC1And/or ZL1, or adjust ZC2
And/or ZL2Even if radio-frequency power supply can get different ions energy under the same power if anode, to realize ion energy
With the independent control of ionic flux.
It will be understood by those skilled in the art that the respective embodiments described above are to realize the specific implementation of the utility model
Example, and in practical applications, can to it, various changes can be made in the form and details, without departing from the spirit of the utility model
And range.
Claims (8)
1. a kind of plasma chemical vapor deposition device, which is characterized in that including anode, cathode and at least one adjusting circuit；
It is connected with substrate on the anode；
By adjusting the impedance for adjusting circuit, the voltage of the anode can be adjusted, to control plasma to the substrate
Bombarding energy.
2. plasma chemical vapor deposition device according to claim 1, which is characterized in that the adjusting circuit includes one
Inductance and a capacitance；One end of the capacitance connects the anode, and the other end is grounded by the inductance.
3. plasma chemical vapor deposition device according to claim 2, which is characterized in that the cathode passes through a matching
Circuit is connected to radio-frequency power supply.
4. plasma chemical vapor deposition device according to claim 1, which is characterized in that the adjusting circuit has two
A, the cathode and the anode pass through an adjusting circuit ground respectively；
The adjusting circuit includes a capacitance and the concatenated inductance of the capacitance.
5. plasma chemical vapor deposition device according to claim 4, which is characterized in that described device further includes radio frequency
Power supply, match circuit and transformer；
The radio-frequency power supply is connected to the input terminal of the transformer, the output end point of the transformer by the match circuit
It is not connect with the cathode and an anode.
6. plasma chemical vapor deposition device according to claim 2 or 4, which is characterized in that | ZL1|>|ZC| and | ZL1|
>|ZC1|, wherein ZL1For the impedance of the inductance in the adjusting circuit, Zc1For it is described adjusting circuit in the concatenated electricity of inductance
The impedance of appearance, ZCThe impedance of coupled capacitor between the cathode and the anode.
7. plasma chemical vapor deposition device according to claim 2 or 4, which is characterized in that by adjusting the tune
The impedance of capacitance in economize on electricity road, to adjust the voltage of the anode, to control bombarding energy of the plasma to the substrate.
8. plasma chemical vapor deposition device according to claim 1, which is characterized in that the substrate is blocked by machinery
Disk or electrostatic chuck are fixed on the anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721720901.3U CN207727148U (en) | 2017-12-12 | 2017-12-12 | Plasma chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721720901.3U CN207727148U (en) | 2017-12-12 | 2017-12-12 | Plasma chemical vapor deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207727148U true CN207727148U (en) | 2018-08-14 |
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ID=63098230
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| CN201721720901.3U Active CN207727148U (en) | 2017-12-12 | 2017-12-12 | Plasma chemical vapor deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913854A (en) * | 2017-12-12 | 2019-06-21 | 上海稷以科技有限公司 | Plasma chemical vapor deposition device |
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2017
- 2017-12-12 CN CN201721720901.3U patent/CN207727148U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109913854A (en) * | 2017-12-12 | 2019-06-21 | 上海稷以科技有限公司 | Plasma chemical vapor deposition device |
| CN109913854B (en) * | 2017-12-12 | 2021-05-07 | 上海稷以科技有限公司 | Plasma chemical vapor deposition device |
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