CN207713814U - Plasma enhanced chemical vapor deposition equipment - Google Patents
Plasma enhanced chemical vapor deposition equipment Download PDFInfo
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- CN207713814U CN207713814U CN201721629939.XU CN201721629939U CN207713814U CN 207713814 U CN207713814 U CN 207713814U CN 201721629939 U CN201721629939 U CN 201721629939U CN 207713814 U CN207713814 U CN 207713814U
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- vapor deposition
- chemical vapor
- vacuum cavity
- enhanced chemical
- plasma enhanced
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Abstract
The utility model discloses a kind of plasma enhanced chemical vapor deposition equipment, including：Vacuum cavity (10), is provided with multiple heating elements；Warm table (20), is arranged in the inside of vacuum cavity；Even device of air (30), is arranged in the inside of vacuum cavity, and positioned at the top of warm table, and towards warm table outlet；And inlet duct (40), it is arranged in the outside of vacuum cavity, and communicated with even device of air, the plasma enhanced chemical vapor deposition equipment further includes：Through-hole (11), the position of the vacuum cavity (10) is set higher than in the cavity wall of the warm table (20), and it is realized and is tightly connected with vacuum cavity by transparent encapsulants (50), and thermal infrared imager (60), it is arranged in the outside of vacuum cavity, and is detected to the temperature of warm table via transparent encapsulants.The plasma enhanced chemical vapor deposition equipment of the utility model it is easy to operate, and measurement range is wider, and measurement result is more accurate.
Description
Technical field
The utility model is related to technical field of material more particularly to a kind of plasma enhanced chemical vapor deposition to set
It is standby.
Background technology
Plasma reinforced chemical vapor deposition system is to make the gas containing film composed atom by microwave or radio frequency etc.
Volume ionization is being partially formed plasma, and is being easy to the characteristic to react by force using plasma chemistry activity, to
Go out desired film in deposition on substrate.Using low temperature plasma as energy source, sample is placed in aura under low pressure and puts
On the cathode of electricity, using glow discharge or heater in addition, which is arranged, makes sample be warming up to scheduled temperature, then passes to suitable
Reaction gas, gas is by a series of chemical reaction and plasma reaction, to form solid film in sample surfaces.
Plasma enhanced chemical vapor deposition system is very stringent to the temperature requirement of substrate, and uniform reaction temperature is
Ensure the uniform necessary condition of pellicle film.Presently, there are all multisystems in, mostly use heating slide holder mode to substrate
It is heated, substrate is made to reach required set temperature, but in the bigger system of sizes of substrate, the heating of slide holder
Range is larger, it is easy to cause that substrate local heating is insufficient or local temperature is excessive, cause surface filming in uneven thickness, shadow
Ring process results.
Surface temperature in order to detect warm table whether reaches predetermined temperature and whether Temperature Distribution is uniform,
The different zones that warm table surface is utilized in some equipment paste several temperature thermocouples, and warm table is transmitted by thermocouple
Local temperature, this kind of method of operation in operation is more complicated, and detects temperature region than narrow, can only detect a certain of stickup
The temperature of point, be easy to cause the error of measurement result, it is therefore desirable to it is accurate, visual result to design a kind of easy to operate and measurement
Method monitors the temperature field on warm table surface.
That is, needing to propose the easy to operate, wide range of measurement of one kind and the accurate plasma enhanced chemical of result
Vapor deposition apparatus.
Utility model content
The purpose of this utility model is to provide a kind of plasma enhanced chemical vapor deposition equipment, including：Vacuum cavity,
Multiple heating elements are arranged inside；Warm table is arranged in the inside of the vacuum cavity；Even device of air is arranged in institute
State the inside of vacuum cavity, and positioned at the top of the warm table, and towards the warm table outlet；And inlet duct,
It is arranged in the outside of the vacuum cavity, and is communicated with the even device of air, the plasma enhanced chemical vapor deposition is set
It is standby to further include：Through-hole, the position that the vacuum cavity is arranged is higher than in the cavity wall of the warm table, and passes through transparent sealing
Part realizes sealed connection and thermal infrared imager with the vacuum cavity, is arranged in the outside of the vacuum cavity, and via
The transparent encapsulants detect the temperature of the warm table.The plasma enhanced chemical vapor deposition of the utility model
Equipment operation is simple, pastes temperature thermocouple without individually opening vacuum cavity, and measurement range is wider, the knot measured
Fruit is more accurate.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the thermal infrared imager packet
Infrared acquisition camera, controller and control computer, the infrared acquisition camera and the through-hole alignment are included, via described
Transparent encapsulants carry out infrared pick-up to the inside of the vacuum cavity, to be detected to temperature.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the central shaft of the through-hole
Line extends through the warm table.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the through-hole is step-like
Stepped hole, including large diameter part, small diameter part and the step surface between the large diameter part and the small diameter part, the thin footpath
Portion from the step surface towards the vacuum cavity in extend, the large diameter part extends towards outside the vacuum cavity, described
Bright sealing element is mounted on the step surface
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the step surface is equipped with
Seal groove, the seal groove is interior to be equipped with sealing ring, and the transparent encapsulants are pressed on by hollow flange disk on the sealing ring.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the vacuum cavity includes
The cylinder shape groove and cavity top cover of upper end opening, the cavity top cover cover the cylinder shape groove, and the even device of air is set
It sets on the cavity top cover.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the vacuum cavity is length
Cube, the cuboid form inclined-plane in the vertex close to the cavity top cover, and the through-hole is arranged on the inclined-plane.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the central shaft of the through-hole
Line is perpendicular to the inclined-plane.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the plasma enhancing
Chemical vapor depsotition equipment further includes lifting regulating mechanism, is arranged in the bottom of the vacuum cavity, the lift adjustment machine
Structure includes elevating lever, and one end of the elevating lever is connect with the warm table, and the other end of the elevating lever reaches described true
Outside cavity body.
Through the above technical solutions, the utility model is in the cavity wall of vacuum cavity by being arranged through-hole, and by transparent
Sealing element is sealed through-hole.Thermal infrared imager be mounted on vacuum cavity outside, can by transparent encapsulants and through-hole,
Adjust the distance between itself and vacuum cavity so that the plasma enhanced chemical vapor deposition equipment operation letter of the utility model
It is single, temperature thermocouple is pasted without individually opening vacuum cavity, and thermal infrared imager can detect its large-scale temperature, measure
Result out is more accurate.
Description of the drawings
Fig. 1 is the stereogram of the plasma enhanced chemical vapor deposition equipment of the utility model；
Fig. 2 is the partial sectional view of the plasma enhanced chemical vapor deposition equipment of the utility model；
Fig. 3 is the stereogram of the vacuum cavity of the plasma enhanced chemical vapor deposition equipment of the utility model.
Reference numeral：
10~vacuum cavity；11~through-hole；12~cylinder shape groove；13~cavity top cover；14~inclined-plane；15~screw thread is pacified
Fill hole；20~warm table；30~even device of air；40~inlet duct；41~hollow flange disk；50~transparent encapsulants；60~
Thermal infrared imager；61~infrared acquisition camera；62~controller；63~control computer；70~lifting regulating mechanism；71~
Elevating lever；111~large diameter part；112~small diameter part；113~seal groove；100~chip.
Specific implementation mode
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, new below in conjunction with this practicality
Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it should be understood that
Specific embodiment described herein only to explain the utility model, is not used to limit the utility model.Described reality
It is only the utility model a part of the embodiment to apply example, instead of all the embodiments.Based on the embodiments of the present invention,
All other embodiment obtained by those of ordinary skill in the art without making creative efforts, belongs to this reality
With novel protected range.
It is in the description of the present invention, it should be noted that term "upper", "lower", "inner", "outside", "horizontal", " perpendicular
Directly " etc. the orientation or positional relationship of instructions is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of describing this reality
With novel and simplified description, does not indicate or imply the indicated device or element must have a particular orientation, with specific
Azimuth configuration and operation, therefore should not be understood as limiting the present invention.
In addition, in the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term
" connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally connect
It connects；It can be mechanical connection, can also be electrical connection；It can be directly connected, can also indirectly connected through an intermediary, it can
To be the connection inside two elements.For the ordinary skill in the art, it can understand above-mentioned term with concrete condition
Concrete meaning in the present invention.
As shown in Figure 1 to Figure 3, the plasma enhanced chemical vapor deposition equipment of the utility model, including：Vacuum cavity
10, multiple heating elements are arranged inside；Warm table 20 is arranged in the inside of vacuum cavity 10；Even device of air 30, setting
In the inside of vacuum cavity 10, and positioned at the top of warm table 20, and gas is exported towards warm table 20；And inlet duct
40, it is arranged in the outside of vacuum cavity 10, and communicated with even device of air 30.The plasma enhanced chemical gas of the utility model
Phase depositing device further includes：The position of through-hole 11, setting vacuum cavity 10 is higher than in the cavity wall of warm table 20, and by saturating
Bright sealing element 50 realizes sealed connection and thermal infrared imager 60 with vacuum cavity 10, is arranged in the outside of vacuum cavity 10,
And the temperature of warm table 20 is detected via transparent encapsulants 50.
In the plasma enhanced chemical vapor deposition equipment of the utility model, warm table 20 is the slide glass dress of whole equipment
It sets, as shown in Fig. 2, the shape of warm table 20 is in the form of annular discs, inside is covered with the thermocouple of heater strip and thermometric, and there is chip in upper surface
Groove, chip 100 can be placed in the wafer notch.When carrying out plating film reaction, the heater strip inside warm table 20 starts to add
Heat, until thermocouple displays temperature reaches preset temperature.Temperature constant state is kept in this temperature spot so that is located at the chip of upper surface
100 are also heated to preset temperature.Later, the reaction gas at the top of equipment is made to be reached after the even gas current of even device of air 30
The surface of chip 100, thus implements coating process.
In the plasma enhanced chemical vapor deposition equipment of the utility model, by being set in the cavity wall of vacuum cavity 10
Through-hole 11 is set, and through-hole 11 is sealed by transparent encapsulants 50, thermal infrared imager is mounted on the outside of vacuum cavity 10.
The inside of vacuum cavity 10 can be imaged by transparent encapsulants 50 and through-hole 11.Also, by adjusting infrared thermal imagery
The distance between instrument 60 and vacuum cavity 10, you can realize focusing of the thermal infrared imager 60 on 100 surface of chip.As a result,
The plasma enhanced chemical vapor deposition equipment of the utility model is easy to operate, pastes survey without individually opening vacuum cavity 10
Warm galvanic couple can carry out temperature detection.
Wherein, thermal infrared imager 60 is a kind of using infrared detector as the special video camera of core, it is according to detection object
The infrared energy and Temperature Distribution of body carry out into image.Thermal infrared imager 60 includes infrared acquisition camera 61, controller
62 and control computer 63, infrared acquisition camera 61 be aligned with through-hole 11, via transparent encapsulants 50 to vacuum cavity 10
Inside carries out infrared pick-up, to be detected to temperature.Infrared acquisition camera 61 is mounted on the outside of vacuum cavity 10,
The light of infrared acquisition camera 61 enters vacuum cavity 10 via through-hole 11 through transparent encapsulants 50 and is carried out to chip 100
Camera shooting.By adjusting the distance between infrared acquisition camera 61 and vacuum cavity 10, infrared acquisition camera 61 is enabled to
It is focused on the surface of warm table 20.Warm table 20 starts heating, and infrared acquisition camera 61 passes through its large-scale temperature sensing
Function feeds back to the temperature data on 20 surface of warm table on controller 62, and controller 62 is using by 61 institute of infrared acquisition camera
The data of collection form temperature field cloud atlas, then the image is transmitted to the control of entire plasma enhanced chemical vapor deposition equipment
On computer 63 processed, detect whether the temperature on 20 surface of warm table reaches set temperature by observing image, and detect table
Whether the temperature in face is uniform.So that the measurement range of the plasma enhanced chemical vapor deposition equipment of the utility model
Extensively, the result measured can be intuitively observed by the imaging of control computer 63, as a result more accurate.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, the central axis of through-hole 11 prolongs
Extend through warm table 20.Infrared acquisition camera 61 is aligned with through-hole 11, and infrared acquisition camera 61 can be in 20 table of warm table
It is focused on face so that wide range of measurement, the result measured are accurate.
In the plasma enhanced chemical vapor deposition equipment of the utility model, preferably, as shown in Fig. 2, through-hole 11 is
Step-like stepped hole, including large diameter part 111, small diameter part 112 and the step between large diameter part 111 and small diameter part 112
Face, small diameter part 112 extend from step surface towards vacuum cavity 10 is interior, and large diameter part 111 is transparent close towards extension outside vacuum cavity 10
Sealing 50 is mounted on step surface.Wherein, transparent encapsulants 50 are sealingly mounted on step surface.Step surface is equipped with seal groove
113, sealing ring is placed in seal groove 113, and transparent encapsulants 50 are pressed on by hollow flange disk 41 on sealing ring.Such as Fig. 3
It is shown, multiple threaded mounting holes 15 are additionally provided on step surface, hollow flange disk 41 is fixed on by bolt and threaded mounting hole 15
On step surface.
In the plasma enhanced chemical vapor deposition equipment of the utility model, vacuum cavity 10 can be integral type, but
The utility model is not limited thereto, and vacuum cavity 10 is split type.Specifically, as shown in Figure 2 and Figure 3, vacuum cavity 10 includes
The cylinder shape groove 12 and cavity top cover 13 of upper end opening, cavity top cover 13 cover cylinder shape groove 12, and even device of air 30 is arranged
In the lower surface of cavity top cover 13.Cavity top cover 13 and the upper end opening of vacuum cavity 10 are tightly connected.Specifically, by
Sealing ring is set between cavity top cover 13 and the upper end opening of vacuum cavity 10, and realizes cavity top cover 13 and vacuum cavity 10
The sealed connection of upper end opening.
In the plasma enhanced chemical vapor deposition equipment of the utility model, vacuum cavity 10 is cuboid, cuboid
Inclined-plane 14 is formed in the vertex close to cavity top cover 13, through-hole 11 is arranged on inclined-plane 14.As shown in Figure 1 to Figure 3, cuboid
The middle part of vacuum chamber 10 there is cylinder shape groove 12, warm table 20 to be located at the middle part of cylinder shape groove 12, the placement of chip 100
On warm table 20, cavity top cover 13 is equipped with inlet duct 40 and even device of air 30, and the outlet of even device of air 30 is towards chip
100.A right angle in the close chamber lid part of vacuum cavity 10 cuts off a part so that the right angle is converted into an inclined-plane
14, through-hole 11 is arranged on inclined-plane 14.Preferably, the central axis upright of through-hole 11 is in inclined-plane 14.
In plasma enhanced chemical vapor deposition technique, the result shadow of the heating temperature of warm table 20 to coating process
Sound is larger, if the surface temperature of warm table 20 is uneven, subregion temperature is excessively high or too low, and it will cause chips 100
Part film thickness it is inconsistent, influence the uniformity of plated film result.The plasma enhanced chemical vapor of the utility model
Depositing device further includes lifting regulating mechanism 70, is arranged in the bottom of vacuum cavity 10, lifting regulating mechanism 70 includes lifting
One end of bar 71, elevating lever 71 is connect with warm table 20, and the other end of elevating lever 71 reaches outside vacuum cavity 10.Pass through adjusting
Lifting regulating mechanism 70 drives elevating lever 71 to move together so that and the distance between chip 100 and even device of air 30 are adjustable, from
And the distance according to different technological requirement adjustment between the two.
In addition, since plasma enhanced chemical vapor deposition equipment has vacuum cavity 10, with vacuum cavity 10
Connected component is all to be sealedly attached to vacuum cavity 10.
In conclusion in the plasma enhanced chemical vapor deposition equipment of the utility model, by vacuum cavity 10
Cavity wall on through-hole 11 is set, and through-hole 11 is sealed using transparent encapsulants 50.Thermal infrared imager 60 is mounted on vacuum
The outside of cavity 10 can image the inside of vacuum cavity 10 by transparent encapsulants 50 and through-hole 11.Also, it is logical
Overregulate the distance between thermal infrared imager 60 and vacuum cavity 10, you can realize thermal infrared imager 60 on 100 surface of chip
It focuses.As a result, the plasma enhanced chemical vapor deposition equipment of the utility model is easy to operate, it is true without individually opening
Cavity body 10, which pastes temperature thermocouple, can carry out temperature detection.In addition, thermal infrared imager 60 can be to vacuum cavity 10 inside
The result for carrying out temperature sensing on a large scale, and measuring is also more accurate.
The foregoing is merely specific embodiment of the present utility model, but the scope of protection of the utility model is not limited to
This, any one skilled in the art within the technical scope disclosed by the utility model, the variation that can be readily occurred in
Or replace, it should be covered within the scope of the utility model.
Claims (9)
1. a kind of plasma enhanced chemical vapor deposition equipment, including：Vacuum cavity (10), is arranged inside multiple heating units
Part；Warm table (20) is arranged in the inside of the vacuum cavity (10)；Even device of air (30) is arranged in the vacuum chamber
The inside of body (10), and positioned at the top of the warm table (20), and towards the warm table (20) outlet；And inlet duct
(40), setting is communicated in the outside of the vacuum cavity (10), and with the even device of air (30), which is characterized in that
The plasma enhanced chemical vapor deposition equipment further includes：
Through-hole (11), the position that the vacuum cavity (10) is arranged is higher than in the cavity wall of the warm table (20), and passes through
Transparent encapsulants (50) realize sealed connection with the vacuum cavity (10), and
Thermal infrared imager (60) is arranged in the outside of the vacuum cavity (10), and right via the transparent encapsulants (50)
The temperature of the warm table (20) is detected.
2. plasma enhanced chemical vapor deposition equipment according to claim 1, which is characterized in that
The thermal infrared imager (60) includes infrared acquisition camera (61), controller (62) and control computer (63), described
Infrared acquisition camera (61) is aligned with the through-hole (11), via the transparent encapsulants (50) to the vacuum cavity (10)
Inside carry out infrared pick-up, to being detected to temperature.
3. plasma enhanced chemical vapor deposition equipment according to claim 2, which is characterized in that
The central axis of the through-hole (11) extends through the warm table (20).
4. plasma enhanced chemical vapor deposition equipment according to claim 3, which is characterized in that
The through-hole (11) be step-like stepped hole, including large diameter part (111), small diameter part (112) and be located at the particle size
Step surface between portion (111) and the small diameter part (112), the small diameter part (112) is from the step surface towards the vacuum
Extend in cavity (10), the large diameter part (111) extends outside towards the vacuum cavity (10), transparent encapsulants (50) peace
On the step surface.
5. plasma enhanced chemical vapor deposition equipment according to claim 4, which is characterized in that
The step surface is equipped with seal groove (113), and sealing ring, the transparent encapsulants are equipped in the seal groove (113)
(50) it is pressed on the sealing ring by hollow flange disk (41).
6. plasma enhanced chemical vapor deposition equipment according to claim 5, which is characterized in that
The vacuum cavity (10) includes the cylinder shape groove (12) and cavity top cover (13) of upper end opening, the cavity top cover
(13) cylinder shape groove (12) is covered, the even device of air (30) is arranged on the cavity top cover (13).
7. plasma enhanced chemical vapor deposition equipment according to claim 6, which is characterized in that
The vacuum cavity (10) is cuboid, and the cuboid forms inclined-plane in the vertex close to the cavity top cover (13)
(14), the through-hole (11) is arranged on the inclined-plane (14).
8. plasma enhanced chemical vapor deposition equipment according to claim 7, which is characterized in that
The central axis upright of the through-hole (11) is in the inclined-plane (14).
9. according to plasma enhanced chemical vapor deposition equipment according to any one of claims 1 to 8, which is characterized in that
The plasma enhanced chemical vapor deposition equipment further includes lifting regulating mechanism (70), is arranged in the vacuum chamber
The bottom of body (10), the lifting regulating mechanism (70) include elevating lever (71), and one end of the elevating lever (71) adds with described
Thermal station (20) connects, and the other end of the elevating lever (71) reaches the vacuum cavity (10) outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721629939.XU CN207713814U (en) | 2017-11-29 | 2017-11-29 | Plasma enhanced chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721629939.XU CN207713814U (en) | 2017-11-29 | 2017-11-29 | Plasma enhanced chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207713814U true CN207713814U (en) | 2018-08-10 |
Family
ID=63057753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721629939.XU Active CN207713814U (en) | 2017-11-29 | 2017-11-29 | Plasma enhanced chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207713814U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112703270A (en) * | 2019-02-28 | 2021-04-23 | Liv能源株式会社 | Chemical vapor deposition apparatus for depositing thin film layers on powder particle form material |
-
2017
- 2017-11-29 CN CN201721629939.XU patent/CN207713814U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112703270A (en) * | 2019-02-28 | 2021-04-23 | Liv能源株式会社 | Chemical vapor deposition apparatus for depositing thin film layers on powder particle form material |
| CN112703270B (en) * | 2019-02-28 | 2023-12-05 | Liv能源株式会社 | Chemical vapor deposition apparatus for depositing a thin film layer on a material in powder particle form |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. |
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| CP03 | Change of name, title or address |