CN207611150U - High purity germanium detector - Google Patents
High purity germanium detector Download PDFInfo
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- CN207611150U CN207611150U CN201721718773.9U CN201721718773U CN207611150U CN 207611150 U CN207611150 U CN 207611150U CN 201721718773 U CN201721718773 U CN 201721718773U CN 207611150 U CN207611150 U CN 207611150U
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Abstract
The utility model discloses a kind of high purity germanium detectors, including HpGe crystal unit array, the HpGe crystal unit array includes two or more HpGe crystal units, wherein, each includes partial electrode positioned at side and/or the first top surface to the two or more HpGe crystal units, and the electrical connection of the electrode of the side of the two or more HpGe crystal units and/or the first top surface contacts electrode collectively as the first of high purity germanium detector；Each HpGe crystal unit includes that the respective second contact electrode of position in the inner so that the high purity germanium detector includes two or more the second contact electrodes.
Description
Technical field
The utility model is related to nuclear detection technology fields, more particularly to high purity germanium detector.
Background technology
High purity germanium detector be it is a kind of using impurity concentration 109cm-3To 1010cm-3Half made of germanium single crystal in range
Conductor detector is mainly used for gamma-rays and X-ray measurement.The detector of this type has high energy resolution and phase
To higher detection efficient, it is widely used in environmental protection, nuclear power, biomedicine, hygienic disease control, army's chemical defence and scientific research etc.
Multiple fields.
The detection efficient of high purity germanium detector is generally indicated with opposing detector efficiency, is defined as：60Co point sources are placed
Right over the detector end face at 25cm, to 1.33MeV energy peaks, high purity germanium detector counting rate and 3 " × 3 " NaI (T1) are visited
Survey the ratio of device counting rate.The size of opposing detector efficiency depends mainly on the volume of high-purity germanium crystal, and because of crystal shape
The difference of shape (mainly diameter-height ratio) and slightly difference, in the case where ignoring the latter, relative detection efficiency and HpGe
Crystal volume has following empirical relation：Relative detection efficiency (%)=volume (cm3)/K, wherein K ≈ 4.3.
The growth difficulty of large volume HpGe crystal unit is very big, and the country not yet realizes this technology at present, in the world also only
There are fewer companies to be capable of providing product, and the price is very expensive.At this stage, the promotion of high purity germanium detector detection efficient,
Largely receive the limitation of HpGe crystal preparing technology.
Utility model content
One side according to the present utility model, the embodiments of the present invention provide a kind of high purity germanium detector, including height
Pure germanium crystal cell array, the HpGe crystal unit array include two or more HpGe crystal units, wherein institute
Stating two or more HpGe crystal units, each includes partial electrode positioned at side and/or the first top surface, and
The side of the two or more HpGe crystal units and/or the electrode of the first top surface are electrically connected collectively as HpGe
First contact electrode of detector；Each HpGe crystal unit includes that the respective second contact electrode of position in the inner makes institute
It includes two or more the second contact electrodes to state high purity germanium detector,
In one embodiment, high purity germanium detector further includes first electrode and second electrode, first electrode connection first
Electrode is contacted, second electrode connects the two or more the at the second top surface of each HpGe crystal unit respectively
Two contact electrodes, the second top surface of each HpGe crystal unit are opposite with the first top surface.
In one embodiment, the two or more HpGe crystal units are configured to the work under identical bias
Make.
In one embodiment, high purity germanium detector further includes：
Two or more charge sensitive preamplifiers, each charge sensitive preamplifier are configured to read from and turn
Change the charge signal that a corresponding HpGe crystal unit generates；And
Multi-channel digital multichannel spectrometer is configured to the voltage signal filtering to being inputted from each charge sensitive preamplifier
Molding extracts amplitude information and obtains the road location h of the voltage signal of the input while recording the number i in the channel of its input,
To show that the synthesis of the signal of the two or more HpGe crystal units is composed.
In one embodiment, multi-channel digital multichannel spectrometer includes correction factor demarcating module, the correction factor mark
Cover half block is directed to each input channel i corresponding with each HpGe crystal unit respectively into spectrum, and automatic peak-seeking obtains peak position
Road location Pij is directed to each channel i, with formula P respectively then on the basis of first passage1=ai*Pi+biFitting data point
(Pij, P1j) (j=1,2 ..., k), obtain fitting parameter [ai, bi] road location correction factor as channel i, wherein i is just whole
Number, first passage are any channel, and j=1,2 ..., k, k are peak number mesh, and k >=2.
In one embodiment, multi-channel digital multichannel spectrometer includes whole spectrum generation module, and the whole spectrum generates mould
Root tuber transfers corresponding road location corrected parameter [a according to the input channel number i of each signali, bi], road location h is modified to h '
=ai*h+bi, by h ' accumulated counts, the synthesis of the two or more HpGe crystal units of real-time display is composed.
In one embodiment, at the beginning of each measure, select at least two single energy rays as incident source.
In one embodiment, the feedback system of each charge sensitive preamplifier is using resistance feedback, transistor
Feedback or light pulse feedback.
In one embodiment, apply first voltage in first electrode, p-type HpGe crystal array first voltage is matched
It is set to positive high voltage, negative high voltage is configured to for N-type HpGe crystal array first voltage；It is preposition that second electrode connects charge-sensitive
The incoming level of amplifier, charge sensitive preamplifier is applied to as second voltage in second electrode.
In one embodiment, the two or more HpGe crystal units are fixed together by box.
In one embodiment, the box is constructed from a material that be electrically conducting.
In one embodiment, the high purity germanium detector being made of the two or more HpGe crystal units has
Symmetrical or regular shape.
In one embodiment, the HpGe crystal unit array includes three HpGe crystal units, each high-purity
Germanium crystal unit includes 120 degree of corners, and there are two corner sides for 120 degree of corners tool of each HpGe crystal unit；
Wherein, the apexes contact in three 120 degree of corners of three HpGe crystal units, three HpGe crystal units
The corner side in 120 degree of corners and the corner side in 120 degree of corners of adjacent HpGe crystal unit abut.
In one embodiment, the HpGe crystal unit array includes 4 HpGe crystal units, and two of which is high
Pure germanium crystal includes the corner at 120 degree of angles, other two high-purity germanium crystal includes the corner at two 120 degree of angles, so that four
The side in the corner of a high-purity germanium crystal mutually abuts.
In one embodiment, the HpGe crystal unit array includes 7 HpGe crystal units, center
HpGe crystal unit has regular hexagon shape, other six high-purity germanium crystals include two 120 degree of angle, symmetrical
Around the HpGe crystal unit of center.
Description of the drawings
Fig. 1 shows the structure of the HpGe crystal unit array of the high purity germanium detector of one embodiment of the utility model
Schematic diagram；
Fig. 2 shows the structures and size of a HpGe crystal unit of the high purity germanium detector of the utility model embodiment
Schematic diagram；
Fig. 3 shows the system block diagram of the high purity germanium detector of the utility model embodiment；
Fig. 4 shows that the structure of the HpGe crystal unit array of the high purity germanium detector of the utility model one embodiment is shown
It is intended to；
Fig. 5 shows that the structure of the HpGe crystal unit array of the high purity germanium detector of the utility model one embodiment is shown
It is intended to.
Specific implementation mode
Although the utility model allows various modifications and interchangeable form, its specific embodiment passes through example
Mode be shown in the accompanying drawings, and will be described herein in detail.It should be appreciated, however, that the attached drawing and detailed of accompanying
Description is not configured to the utility model being restricted to disclosed concrete form, but on the contrary, is fallen into cover by being appended
All modifications, equivalent form and alternative forms in the spirit and scope of the utility model that claim limits.Attached drawing is
In order to illustrate, thus draw not to scale.
Used the terms such as " first ", " second " in the present specification, be not intended to sort or indicate importance or
Primary-slave relation, but for distinguishing different components." top side " and " bottom side " is the object relative under normal circumstances in this specification
The orientation of the upright the upper side and lower side of body.
Below according to description of the drawings multiple embodiments according to the present utility model.
The embodiments of the present invention provide a kind of high purity germanium detector 100, including HpGe crystal unit array, described
HpGe crystal unit array includes two or more HpGe crystal units 101, wherein the two or more high-purity
Each includes electrode material positioned at side 101c and/or the first top surface 101a to germanium crystal unit 101, and described two
Or more the side 101c of HpGe crystal unit 101 and/or the first top surface 101a electrode material electrical connection and it is common
First as high purity germanium detector contacts electrode；Each HpGe crystal unit 101 includes respective second of position in the inner
Contact electrode so that the high purity germanium detector includes two or more the second contact electrodes.Herein, electrode material can be
Multiple material, the material or can prevent HpGe Crystallization blocking contact with HpGe Crystallization PN junction
(blocking contact).It is usually that lithium or sputtering phosphonium ion are deposited on high-purity germanium crystal to form contact electrode using material
And formed, can also be other depositing operations.Those skilled in the art can use the existing technique of high purity germanium detector to make.
The high purity germanium detector further includes first electrode and second electrode, and first electrode connection first contacts electrode, the
Connection the two or more second connects two electrodes at the second top surface 101b of each HpGe crystal unit 101 respectively
Second top surface 101b of touched electrode, each HpGe crystal unit 101 is opposite with the first top surface 101a.Measuring ray
When, apply first voltage in first electrode, first voltage is p-type or N-type according to HpGe crystal array, is correspondingly configured to
Positive or negative voltage.Second electrode connects charge sensitive preamplifier, and the incoming level of charge sensitive preamplifier is made
It is applied in second electrode for second voltage.Second contact electrode can be located at the center of each HpGe crystal unit 101, have
The electron hole pair of generation is excited in HpGe crystal unit 101 conducive to collecting, however, this it is not necessary to.
Be spliced to form array using multiple HpGe crystal units 101, overcome single crystal volume it is small thus detection effect
The low limitation of rate, meanwhile, it realizes and avoids using cheap small high-purity germanium crystal common using big high-purity germanium crystal
Work obtains the similar Effect on Detecting of big high-purity germanium crystal, thus in the case of similar detection efficient, to a certain degree
On reduce product cost.
In the embodiment shown in fig. 1, the first top surface 101a is used as ray receiving plane, and radiation exposure first pushes up table
Face 101a simultaneously enters HpGe crystal unit 101, to excite electron-hole pair in HpGe crystal unit 101.Electronics
With hole under the electric field force effect that first voltage and second voltage are formed, drift about towards first electrode and second electrode, to
Charge inducing signal is inputted into the charge sensitive preamplifier being connected with second electrode.
In one embodiment, the two or more HpGe crystal units 101 in high purity germanium detector, configuration
At can work under identical bias.
In an additional preferred embodiment, the two or more high-purity germanium crystal lists in high purity germanium detector 100
Member 101 has same shape structure so that each crystal unit can work under identical bias.In one embodiment
In, the two or more HpGe crystal units 101 in high purity germanium detector 100 have mutually matched shape, make
The shape of rule can be abutted and be arranged into each other by contact surface by obtaining the two or more HpGe crystal units 101,
Or centrosymmetric shape.Together, it is to have that the germanium detector of composition has well-regulated shape to multiple HpGe crystal combinations
Profit, such as with centrosymmetric shape.When measuring, generally by radiation source close to detector, the symmetrical germanium of regular shape
Detector receives the radiation of radiation source, and the radiation of radiation source increases with propagation distance and reduced, thus HpGe crystal counter
Center at detect more radiation, the marginal reception of detector to less radiation, high-purity germanium crystal of symmetrical shape is visited
Survey device detection efficient higher.
In one embodiment, as shown in Figure 1, the HpGe crystal unit array includes 3 HpGe crystal units
101, each HpGe crystal unit 101 includes 120 degree corners, side 101s there are two 120 degree of corners, and described two
Angle between a side 101s is 120 degree；Wherein, the vertex in 3 120 degree of corners of 3 HpGe crystal units 101 connects
It touches, 120 degree of the side 101s in 120 degree corners of each HpGe crystal unit 101 and adjacent HpGe crystal unit 101
The side 101s in corner is abutted.As shown in Figure 1, HpGe crystal unit array includes 3 HpGe crystal units 101,
By the line of centres of HpGe crystal unit 101 arrangement in equilateral triangle.The center of each HpGe crystal unit 101 makes
Second contact electrode, is connected with second electrode (read-out electrode) respectively.The side 101c of each HpGe crystal unit 101 with
And first top surface 101a make electrode, and mutually keep electrical connection, electrode contacted collectively as the first of detector.Using 3
A HpGe crystal unit 101, each HpGe crystal unit 101 include that 120 degree of corners constitute HpGe crystal unit array
It is advantageous, reduces the loss of HpGe crystal substrate in this way.In the present embodiment, each HpGe crystal unit 101 uses
Single beginning coaxial type structure, crystal height 40mm, the machined formation two in side of a diameter of 66mm, crystal are mutually
The flat side of 120 ° of angles, i.e., the side 101s in corner is as Mosaic face.
In another embodiment of the utility model, the HpGe crystal unit array of high purity germanium detector 100 includes 2
HpGe crystal unit 101.
In another embodiment of the utility model, the HpGe crystal unit array of high purity germanium detector 100 includes 4
HpGe crystal unit 101.Fig. 4 shows the cross-sectional view of 4 high-purity germanium crystals.As shown in figure 4,4 high-purity germanium crystals
Unit 101 is spliced into HpGe crystal unit array, and the high-purity germanium crystal of two of which includes the corner at 120 degree of angles, other two
High-purity germanium crystal includes the corner at two 120 degree of angles, so that the side 101s in the corner of four high-purity germanium crystals is mutually supported
It connects.
In another embodiment of the utility model, the HpGe crystal unit array of high purity germanium detector 100 includes seven
A HpGe crystal unit 101.Fig. 5 shows the cross-sectional view of seven high-purity germanium crystals.As shown in figure 5, seven HpGes
Crystal unit 101 is spliced into HpGe crystal unit array, wherein the HpGe crystal unit 101 positioned at center has just
The shape of hexagon, other six high-purity germanium crystals include two 120 degree of angle, are symmetrically distributed in the high-purity germanium crystal list in center
Around member 101.
Hatching in Fig. 4 and Fig. 5 does not indicate that the meanings such as any related direction, is cross section only for signal Figure 4 and 5
Figure.
Further, multiple HpGe crystal units 101 have similar impurity concentration, it can be advantageous to ensure each high
Pure germanium crystal unit 101 exhausts voltage value with close, and then can be reduced to 100 configuration work bias of high purity germanium detector
Difficulty.Therefore, it is possible to improve the detection accuracy and detection efficient for the detector that multiple HpGe crystal units 101 are constituted.
In the other embodiment of the utility model, multiple HpGe crystal units 101 in high purity germanium detector 100
Shape differs or close, includes the electricity by being deposited or sputtering formation on the part surface of each HpGe crystal unit 101
Pole material, these surface portion are realized by electrode material and are electrically connected, to form the first contact electricity of high purity germanium detector 100
Pole.In addition, the impurity concentration of the two or more HpGe crystal units 101 in high purity germanium detector 100 can also
It differs, in other words, as long as meeting the requirement of high-purity germanium crystal, alternatively, further, as long as so that two or more high
Pure germanium crystal unit 101 can work under identical bias.These HpGe crystal units 101 are electrically connected to form high-purity
Germanium detector 100, each crystal unit can work under identical bias.
Embodiment according to the present utility model, electrode material can be arranged on the side surface of HpGe crystal unit 101,
And the first top surface 101a of HpGe crystal unit 101 can be exposed surface, it is multiple high-purity by the contact of side surface
Germanium crystal unit 101 realizes electrical connection.However, existing in another embodiment, electrode material can cover HpGe crystal unit 101
Side 101c and the first top surface 101a, ray can penetrate electrode material enter high-purity germanium crystal.
In the embodiments of the present invention, electrode material can not have to the top surface of covering HpGe crystal unit 101
101a.The region for being not covered with electrode material is known as crystal intrinsic region, and intrinsic region does not contact (the namely high pressure) of first electrode.
The electrical connection of multiple HpGe crystal units 101 can be realized by other component.The multiple high-purity germanium crystal lists being electrically connected
Member 101 thus be electrically connected first contact electrode.For example, in one embodiment of the utility model, it is multiple
HpGe crystal unit 101 can be fixed together by box 104, and box 104 is that conductive material is formed, and box 104 is will be more at this time
A HpGe crystal unit 101 can use while being fixed together as electrode.
Such as box as shown in Figure 1, box is contacted with the side 101c of multiple HpGe crystal units 101, and HpGe is brilliant
The part of the side 101c or side 101c of body unit 101 are deposited or sputtering has electrode material.In the embodiment in figure 1, multiple
The circular outside face 101c and corner side 101s of HpGe crystal unit 101, which are deposited or sputter, electrode material, alternatively, circle
The part of shape lateral surface 101c and the part vapor deposition of corner side 101s or sputtering have electrode material.Conductive material formed box be
Advantageous, electrically conductive box is not only able to multiple HpGe crystal units 101 being fixed together, and may be implemented multiple
The electrical connection of HpGe crystal unit 101.
By the impurity concentration parameter for reasonably selecting HpGe crystal unit 101 so that each crystal unit can be in phase
With working under bias, i.e., single high voltage power supply power supply still may be used in entire detector, simple in structure, easy and safe to operate.
Herein it is noted that the impurity concentration of multiple HpGe crystal units 101 can differ, but in a certain range.
Skilled in the art realises that the range of the impurity concentration of high-purity germanium crystal of general significance, for example, impurity concentration reaches
1010cm-3Magnitude, or preferably reach 109cm-3Magnitude.In the embodiments of the present invention, multiple HpGe crystal units
101 concentration can differ, if their concentration can be configured to the multiple HpGe crystal unit 101 can be in phase
With working under bias.
Fig. 3 shows the block diagram of the high purity germanium detector 100 of the utility model embodiment.High purity germanium detector 100 can wrap
Include HpGe crystal unit array, charge sensitive preamplifier and multi-channel digital multichannel spectrometer.
In one embodiment, high purity germanium detector 100 may include two or more charge sensitive preamplifiers,
Each charge sensitive preamplifier is configured to read from and converts the voltage that a corresponding HpGe crystal unit 101 generates
Signal.In embodiment shown in Fig. 3, high purity germanium detector 100 includes 3 HpGe crystal units 101, is correspondingly arranged 3 electricity
Lotus sensitive preamplifier PreAmp1, PreAmp2, PreAmp3.The feedback system of each charge sensitive preamplifier is adopted
With resistance feedback, transistor feedback or light pulse feedback.
High purity germanium detector 100 can also include multi-channel digital multichannel spectrometer, be configured to before each charge-sensitive
The voltage signal filtering molding for setting amplifier input, extracts amplitude information and the road location h for obtaining the voltage signal of the input is same
Shi Jilu its input channel number i, so as to obtain the two or more HpGe crystal units 101 signal conjunction
Cheng Pu.
In the embodiments of the present invention, multi-channel digital multichannel spectrometer includes correction factor demarcating module, described to repair
Positive coefficient demarcating module for each input channel i corresponding with each HpGe crystal unit 101 respectively at spectrum, and automatic seeking
Peak obtains peak position road location Pij, then on the basis of first passage, each channel i is directed to respectively, with formula P1=ai*Pi+biIt is quasi-
Close data point (Pij, P1j) (j=1,2 ..., k), obtain fitting parameter [ai, bi] road location correction factor as channel i, wherein
I is positive integer, and first passage is any channel, j=1, and 2 ..., k, k are peak number mesh, and k >=2.
In the embodiments of the present invention, multi-channel digital multichannel spectrometer includes whole spectrum generation module, the entirety
Spectrum generation module transfers corresponding road location corrected parameter [a according to the input channel number i of each signali, bi], by road location h
It is modified to h '=ai*h+bi, by h ' accumulated counts, the synthesis of the two or more HpGe crystal units of real-time display 101
Spectrum.
In the embodiments of the present invention, at the beginning of each measure, select at least two it is single can rays as incidence source,
The correction factor demarcating module is directed to each input channel i corresponding with each HpGe crystal unit 101 respectively at spectrum, and
Automatic peak-seeking obtains peak position road location Pij, then on the basis of first passage, each channel i is directed to respectively, with formula P1=ai*Pi
+biFitting data point (Pij, P1j) (j=1,2 ..., k), obtain fitting parameter [ai, bi] as channel i road location correct system
Number, wherein i are positive integers, and first passage is any channel, j=1, and 2 ..., k, k are peak number mesh, and k >=2.It is noted that
The meaning that first passage does not sort.
The corresponding correction factor of each crystal unit is obtained by demarcating in advance, it can be during spectral measurement to being produced from
The signal road location of different crystal carries out on-line amending, obtains the whole power spectrum of detector array in real time.
According to the structure of the high purity germanium detector 100 of the utility model embodiment, the radiation by GEANT4 to detector
Response carries out simulation calculating, the results show that its opposing detector efficiency can reach 102%.Contrastively, single cylindrical crystal base
The opposing detector efficiency of material is about 37%.Thus, the embodiments of the present invention can use smaller high-purity germanium crystal list
Member 101 realizes the detection efficient of big HpGe crystal unit 101 so that the cost of high purity germanium detector 100 substantially reduces.
Although some embodiments of this totality inventional idea have been shown and have illustrated, those of ordinary skill in the art will manage
Solution can make a change these embodiments, this practicality is new in the case of the principle and spirit without departing substantially from this totality inventional idea
The range of type is limited with claim and their equivalent.
Claims (15)
1. a kind of high purity germanium detector, including HpGe crystal unit array, the HpGe crystal unit array includes two
Or more HpGe crystal unit, wherein the two or more HpGe crystal units each include be located at side
And/or first top surface partial electrode, and the side of the two or more HpGe crystal units and/or first top
The electrode electrical connection on surface contacts electrode collectively as the first of high purity germanium detector；Each HpGe crystal unit includes being located at
Respective second contact electrode in it so that the high purity germanium detector includes two or more the second contact electrodes.
2. high purity germanium detector as described in claim 1 further includes first electrode and second electrode, first electrode connection first
Electrode is contacted, second electrode connects the two or more the at the second top surface of each HpGe crystal unit respectively
Two contact electrodes, the second top surface of each HpGe crystal unit are opposite with the first top surface.
3. high purity germanium detector as described in claim 1, wherein the two or more HpGe crystal units are configured to
It can work under identical bias.
4. high purity germanium detector as described in claim 1, further includes：
Two or more charge sensitive preamplifiers, each charge sensitive preamplifier are configured to read from and convert one
The charge signal that a corresponding HpGe crystal unit generates；And
Multi-channel digital multichannel spectrometer is configured to be filtered into the voltage signal inputted from each charge sensitive preamplifier
Type extracts amplitude information and obtains the road location h of the voltage signal of the input while recording the number i in the channel of its input, with
Just the synthesis spectrum of the signal of the two or more HpGe crystal units is obtained.
5. high purity germanium detector as claimed in claim 4, wherein multi-channel digital multichannel spectrometer include correction factor calibration mold
Block, the correction factor demarcating module are directed to each input channel i corresponding with each HpGe crystal unit respectively at spectrum, and
Automatic peak-seeking obtains peak position road location Pij, then on the basis of first passage, each channel i is directed to respectively, with formula P1=ai*Pi
+biFitting data point (Pij, P1j) (j=1,2 ..., k), obtain fitting parameter [ai, bi] as channel i road location correct system
Number, wherein i are positive integers, and first passage is any channel, j=1, and 2 ..., k, k are peak number mesh, and k >=2.
6. high purity germanium detector as claimed in claim 5, wherein multi-channel digital multichannel spectrometer include whole spectrum generation module,
The whole spectrum generation module transfers corresponding road location corrected parameter [a according to the input channel number i of each signali,
bi], road location h is modified to h '=ai*h+bi, by h ' accumulated counts, the two or more high-purity germanium crystal lists of real-time display
The synthesis spectrum of member.
7. high purity germanium detector as claimed in claim 6 selects at least two single energy rays to make wherein at the beginning of each measure
For incident source.
8. the feedback system of high purity germanium detector as claimed in claim 4, wherein each charge sensitive preamplifier is adopted
With resistance feedback, transistor feedback or light pulse feedback.
9. high purity germanium detector as claimed in claim 2, wherein applying first voltage in first electrode, for p-type HpGe
Crystal array first voltage is configured to positive high voltage, and negative high voltage is configured to for N-type HpGe crystal array first voltage；Second electricity
Pole connects charge sensitive preamplifier, and the incoming level of charge sensitive preamplifier is applied to second as second voltage
On electrode.
10. high purity germanium detector as described in claim 1, wherein the two or more HpGe crystal units pass through box
It is fixed together.
11. high purity germanium detector as claimed in claim 10, wherein the box is constructed from a material that be electrically conducting.
12. high purity germanium detector as described in claim 1, wherein being made of the two or more HpGe crystal units
High purity germanium detector have symmetrical or regular shape.
13. high purity germanium detector as claimed in claim 12, wherein the HpGe crystal unit array includes three high-purity
Germanium crystal unit, each HpGe crystal unit include 120 degree of corners, and 120 degree of corners of each HpGe crystal unit have
Two corner sides；
Wherein, the apexes contact in three 120 degree of corners of three HpGe crystal units, the 120 of three HpGe crystal units
The corner side in the corner of degree and the corner side in 120 degree of corners of adjacent HpGe crystal unit abut.
14. high purity germanium detector as claimed in claim 12, wherein the HpGe crystal unit array includes 4 HpGes
Crystal unit, the high-purity germanium crystal of two of which include the corner at 120 degree of angles, other two high-purity germanium crystal includes two 120 degree
The corner at angle, so that the side in the corner of four high-purity germanium crystals mutually abuts.
15. high purity germanium detector as claimed in claim 12, wherein the HpGe crystal unit array includes 7 HpGes
Crystal unit, it includes two that the HpGe crystal unit of center, which has regular hexagon shape, other six high-purity germanium crystals,
120 degree of angle is symmetrically distributed in around the HpGe crystal unit of center.
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| CN201721718773.9U CN207611150U (en) | 2017-12-11 | 2017-12-11 | High purity germanium detector |
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2017
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