CN207530705U - A kind of power supply circuit for the non-isolated IGBT driving chips of high pressure - Google Patents
A kind of power supply circuit for the non-isolated IGBT driving chips of high pressure Download PDFInfo
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- CN207530705U CN207530705U CN201721708745.9U CN201721708745U CN207530705U CN 207530705 U CN207530705 U CN 207530705U CN 201721708745 U CN201721708745 U CN 201721708745U CN 207530705 U CN207530705 U CN 207530705U
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Abstract
The utility model provides a kind of power supply circuit for the non-isolated IGBT driving chips of high pressure, and the power supply mode switch for solving existing IGBT driving chips interferes the problems such as larger, volume is larger, the normal operation of influence igbt chip.The utility model includes the Power processing circuit, filter circuit, capacitance C25, feedback circuit, resistance R23, the diode D12 that are provided with chip U4；Filter circuit includes capacitance C23, inductance L3, capacitance C24；Feedback circuit includes resistance R25, resistance R26；Power processing circuit further includes diode D2, capacitance C11, inductance L4；The model LNK304 or LNK305 or LNK306 of chip U4.The utility model has the advantages that small, and suitable for the occasion that volume requirement is tighter, cost is relatively low, significantly reduces EMI, improves product dielectric strength, can meet the needs of different igbt chips, is easy to match different demands, be used suitable for large-scale promotion.
Description
Technical field
The utility model is related to high voltage supply field, particularly for the power supply of the non-isolated IGBT driving chips of high pressure electricity
Road.
Background technology
IGBT driving chips power supply mode is mostly to be provided by transformer mode from low-pressure end or high-pressure side currently on the market
Electric energy since volume of transformer is larger, and has larger switch interference, if these are interfered without inhibiting, eliminating and shield,
The normal operation of igbt chip can be influenced, the reliability of igbt chip can be influenced under serious conditions；Additionally due to Switching Power Supply is shaken
Swinging device does not have the isolation of Industrial Frequency Transformer, these interference will seal in common frequency power network, make other neighbouring electronic instruments, equipment and
Household electrical appliance are heavily disturbed.
Utility model content
In view of the above-mentioned problems of the prior art, the utility model provide one kind can reduce component number, greatly
Ground reduces the power supply circuit for the non-isolated IGBT driving chips of high pressure of EMI (electromagnetic interference).
A kind of power supply circuit for the non-isolated IGBT driving chips of high pressure, the Power Processing electricity including being provided with chip U4
Road, the filter circuit, one end and the chip U4 that are connect with the drain lead D of chip U4 bypass pin BP connections capacitance C25 and
Feedback circuit further includes the resistance R23 that one end connect with power input and two poles that cathode is connect with the other end of resistance R23
Pipe D12.
The filter circuit includes the capacitance C23 that one end is connect with the anode of diode D12 and the other end is grounded, one end
The inductance L3 and one end being connect with the anode of diode D12 are connect with the other end of inductance L3 and the capacitance C24 of other end ground connection；
The other end of the capacitance C24 and the other end of inductance L3 are connect with the drain lead D of chip U4.
The feedback circuit include one end with the feedback pin FB of the chip U4 resistance R25 connecting and resistance R26.
The Power processing circuit further includes the source lead S connections of inductance L4, anode and chip U4 and cathode is grounded
Diode D2 and the capacitance C11 that is connect with the other end of resistance R26 of anode.
One end of the inductance L4 respectively with the cathode of capacitance C11, the other end of resistance R25, capacitance C25 cathode and
The source lead S connections of chip U4, the other end are connected separately with the cathode of diode D9, the anode of capacitance C7 and power supply output
End；The power output end is connected with the resistance R46 of one end ground connection；The anode of the diode D9 is another with resistance R26's
One end connects；The cathode ground connection of the capacitance C7.
Preferably, the model LNK304 or LNK305 or LNK306 of the chip U4.
Preferably, the filter circuit is π type filter circuits.
Preferably, the capacitance C11 and capacitance C7 is electrolytic capacitor.
Preferably, the inductance value of the inductance L3 is 1mH.
Preferably, the inductance value of the inductance L4 is 1mH.
Compared with prior art, the utility model has the advantages that：
1. compared with the power supply mode of existing IGBT driving chips, avoid using transformer in the utility model so that whole
Body circuit has the advantages that small, interference is small etc. so that it is widely used in small-power power supply environment；
2. peripheral component is less in the utility model, peripheral component quantity is less than 15, so that cost is relatively low,
It is adapted to most of small occasions required to power supply unit；；
3. using the component of standardized production, there is stringent parameter tolerance to be floated with small to negligible temperature
It moves；
4. increasing resistance flowing resistance, frequency modulating technology significantly reduces EMI (electromagnetic interference), and reduces EMI filters
The cost of wave device；
5. the power supply of the utility model is converted by high pressure, it is isolated with low-voltage circuit, improves product dielectric strength；
It powers 6. using and being depressured mode by high-pressure side for igbt chip, is interfered from high-pressure side and be added to igbt chip simultaneously
C-terminal and E ends, while can also power up in power-switching circuit, the same phase of the two, common mode inhibition effect is generated, can be reduced from high pressure
The interference at end；
The chip of 7.LNK30X (X=4,5,6) series is used for Power Processing, can meet the needs of different igbt chips,
It is easy to match different demands.
Description of the drawings
Fig. 1 is the circuit diagram of embodiment.
Specific embodiment
The utility model is described in further detail with reference to the accompanying drawings and examples, and the embodiment of the utility model includes
But it is not limited to the following example.
Embodiment
As shown in Figure 1, a kind of power supply circuit for the non-isolated IGBT driving chips of high pressure, including being provided with chip U4's
The bypass pin BP connections of Power processing circuit, the filter circuit, one end and the chip U4 that are connect with the drain lead D of chip U4
Capacitance C25 and feedback circuit further include resistance R23 and the other end of cathode and resistance R23 that one end is connect with power input
The diode D12 of connection；Wherein, capacitance C25 is filter capacitor；Surge current in circuit is limited to safe range by resistance R23
It is interior, while differential mode noise can be reduced.In the present embodiment, the model LNK304 or LNK305 or LNK306 of chip U4；
The chip of LNK30X (X=4,5,6) series is used for Power Processing, can meet the needs of different igbt chips, is easy to matching not
Same demand.
Filter circuit includes the capacitance C23 that one end is connect with the anode of diode D12 and the other end is grounded, one end and two poles
Inductance L3, the other end connection of one end and inductance L3 and the capacitance C24 of other end ground connection of the anode connection of pipe D12；Capacitance C24
The other end and the other end of inductance L3 connect with the drain lead D of chip U4.In the present embodiment, the inductance value of inductance L3 is
1mH (milihenry)；Capacitance C23, inductance L3, capacitance C24 composition filter circuits are π type filter circuits.
Feedback circuit include one end with the feedback pin FB of the chip U4 resistance R25 connecting and resistance R26；Chip U4's
Feedback pin FB reference voltages are 1.65V, when the partial pressure value of resistance R25 and resistance R26 are above this reference voltage, chip U4
Inside reduces output duty cycle, its output voltage is made to be lower；Similarly, when the partial pressure value of resistance R25 and resistance R26 are below this base
During quasi- voltage, increase output duty cycle inside chip U4, increase its output voltage, so as to complete the work(stabilized the output voltage
Energy.
Power processing circuit further includes two poles of the source lead S connections of inductance L4, anode and chip U4 and cathode ground connection
The capacitance C11 that pipe D2 and anode are connect with the other end of resistance R26.In the present embodiment, the inductance value of inductance L4 is 1mH.
One end of inductance L4 respectively with the cathode of capacitance C11, the other end of resistance R25, the cathode of capacitance C25 and chip U4
Source lead S connections, the other end is connected separately with the anode and power output end of the cathode of diode D9, capacitance C7；Electricity
Source output terminal is connected with the resistance R46 of one end ground connection；The anode of diode D9 is connect with the other end of resistance R26；Capacitance C7's
Cathode is grounded.In the present embodiment, capacitance C11 and capacitance C7 is electrolytic capacitor.In the present embodiment, resistance R46 is as output electricity
The fictitious load on road.
When utility model works, resistance R23 is passed through in A ends as power input, 500V high tension voltages on the left of circuit
After diode D12, by capacitance C23, inductance L3, capacitance C24 composition C-L-C type filter circuits；Then filtered place
High pressure after reason enters the drain lead D of chip U4, then by being made of chip U4, diode D2, inductance L4, capacitance C7
After Power processing circuit is handled and amplified by the feedback circuit that resistance R25, resistance R26 are formed, exported by the unit on the right side of circuit
The low voltage of B ends output 15V is held, exports to igbt chip and is powered.
The above is only the preferred embodiment of the present invention, and embodiment is used to understand structure, the function of utility model
And effect, the protection domain being not intended to limit the utility model.Various modifications and changes may be made to the present invention, all at this
Within the spirit and principle of utility model, any modification, equivalent replacement, improvement and so on should be included in the utility model
Protection domain within.
Claims (6)
1. a kind of power supply circuit for the non-isolated IGBT driving chips of high pressure, which is characterized in that including being provided with chip U4's
The bypass pin BP connections of Power processing circuit, the filter circuit, one end and the chip U4 that are connect with the drain lead D of chip U4
Capacitance C25 and feedback circuit further include resistance R23 and the other end of cathode and resistance R23 that one end is connect with power input
The diode D12 of connection；
The filter circuit includes the capacitance C23 that one end is connect with the anode of diode D12 and the other end is grounded, one end and two
The inductance L3 of the anode connection of pole pipe D12 and one end are connect with the other end of inductance L3 and the capacitance C24 of other end ground connection；It is described
The other end of capacitance C24 and the other end of inductance L3 connect with the drain lead D of chip U4；
The feedback circuit include one end with the feedback pin FB of the chip U4 resistance R25 connecting and resistance R26；
The Power processing circuit further includes the two of the source lead S connections of inductance L4, anode and chip U4 and cathode ground connection
The capacitance C11 that pole pipe D2 and anode are connect with the other end of resistance R26；
One end of the inductance L4 respectively with the cathode of capacitance C11, the other end of resistance R25, capacitance C25 cathode and chip
The source lead S connections of U4, the other end are connected separately with the anode and power output end of the cathode of diode D9, capacitance C7；
The power output end is connected with the resistance R46 of one end ground connection；The anode of the diode D9 and the other end of resistance R26
Connection；The cathode ground connection of the capacitance C7.
2. the power supply circuit according to claim 1 for the non-isolated IGBT driving chips of high pressure, which is characterized in that described
Chip U4 model LNK304 or LNK305 or LNK306.
3. the power supply circuit according to claim 2 for the non-isolated IGBT driving chips of high pressure, which is characterized in that described
Filter circuit be π type filter circuits.
4. the power supply circuit according to claim 3 for the non-isolated IGBT driving chips of high pressure, which is characterized in that described
Capacitance C11 and capacitance C7 be electrolytic capacitor.
5. the power supply circuit according to claim 4 for the non-isolated IGBT driving chips of high pressure, which is characterized in that described
Inductance L3 inductance value be 1mH.
6. the power supply circuit according to claim 5 for the non-isolated IGBT driving chips of high pressure, which is characterized in that described
Inductance L4 inductance value be 1mH.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721708745.9U CN207530705U (en) | 2017-12-08 | 2017-12-08 | A kind of power supply circuit for the non-isolated IGBT driving chips of high pressure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721708745.9U CN207530705U (en) | 2017-12-08 | 2017-12-08 | A kind of power supply circuit for the non-isolated IGBT driving chips of high pressure |
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| Publication Number | Publication Date |
|---|---|
| CN207530705U true CN207530705U (en) | 2018-06-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108809200A (en) * | 2018-08-27 | 2018-11-13 | 龙城电装（常州）有限公司 | Air Condition Compressor for Electric Vehicle PMSM Drive System |
-
2017
- 2017-12-08 CN CN201721708745.9U patent/CN207530705U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108809200A (en) * | 2018-08-27 | 2018-11-13 | 龙城电装（常州）有限公司 | Air Condition Compressor for Electric Vehicle PMSM Drive System |
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