CN207517649U - Wafer processing device - Google Patents

Abstract

The utility model discloses a kind of wafer processing devices, are related to technical field of semiconductors, which includes：Semiconductor processing device, it includes first chamber portion and second chamber portion, micro chamber is formed between first chamber portion and second chamber portion, first chamber portion has from the external first through hole that the first chamber portion is passed through to be connected with micro chamber and passes through second through-hole of the first chamber portion to be connected with micro chamber from external；Sampling device, it includes the fluid flow rate control unit that can be connected with first through hole and the treatment fluid selecting unit being connected with fluid flow rate control unit, it can select this time required type of fluid in the multiple fluid of offer, and fluid flow rate control unit is used for the flow velocity of fluid that control process fluid selecting unit is conveyed to semiconductor processing device；Go out sampling device, can be connected with the second through-hole of semiconductor processing device, be used for the reaction solution of the second through-hole discharge collected from semiconductor processing device.

Description

Wafer processing device

Technical field

The utility model is related to technical field of semiconductors, more particularly to a kind of wafer processing device.

Background technology

Integrated circuit is gradually applied in many fields at present, such as computer, communication, Industry Control and consumer electricity Son etc..The manufacturing industry of integrated circuit has become important basic industry as steel.And wafer is production integrated circuit institute Carrier.With the further reduction of integrated circuit dimensions, contained impurity becomes matter to one side wafer silicon materials in itself The requirement that detection is needed to monitor in amount control, still further aspect are required for crystal column surface to protect in the production of wafer and preparation process Enough clean-up performances are held, therefore, during in production wafer or carrying out technique processing to wafer, often will appear needs pair The surface or inside of wafer are detected, to obtain the impurity content of crystal column surface or inside, so that it is determined that whether wafer is full Foot requirement.

However, it is current in the prior art, be typically necessary and submerged or sprayed skill to wafer by traditional equipment The wet-treating of art etc., then liquid is detected to obtain crystal column surface or internal impurity content to treated.On but It states in detection method, lacking the device of special detection wafer causes to the processing procedure of wafer convenience not fast enough, next, It is more that the liquid handled to wafer is used for detect wafer impurity, since the impurity in wafer itself is relatively low, Accuracy of detection or accuracy in the detection process to determine wafer impurity content is subsequently detected to liquid can not obtain Ensure or can not further improve.Therefore, it is necessary to propose a kind of wafer processing device dedicated for detection wafer impurity To solve the above problems.

Utility model content

In order to overcome the drawbacks described above of the prior art, the technical problem to be solved is that provide for the utility model embodiment A kind of wafer processing device can be handled wafer, and then carry out early period to carry out pollution defects inspecting to wafer Prepare.

The specific technical solution of the utility model embodiment is：

A kind of wafer processing device, including：

Semiconductor processing device, the semiconductor processing device include first chamber portion and can exist relative to first chamber portion The second chamber portion moved between open position and closed position, microcavity is formed between first chamber portion and second chamber portion Room, first chamber portion have from the external first through hole that the first chamber portion is passed through to be connected with the micro chamber and are worn from outside The second through-hole that the first chamber portion is crossed to be connected with micro chamber；

Sampling device, the sampling device include the fluid flow rate control unit that can be connected with the first through hole and with The treatment fluid selecting unit that the fluid flow rate control unit is connected, the treatment fluid selecting unit can be in offer Type of fluid in multiple fluid needed for selection this time, the fluid flow rate control unit are used to that the treatment fluid to be controlled to select The flow velocity for the fluid that unit is conveyed to the semiconductor processing device；

Go out sampling device, it is described go out sampling device can be connected with the second through-hole of the semiconductor processing device, be used to receive Collect the reaction solution discharged from second through-hole of the semiconductor processing device.

The technical solution of the utility model has following notable advantageous effect：

1st, the wafer processing device in the application uses the semiconductor processing device with micro chamber to handle wafer, For traditional processing unit, the measuring for solution used in entire detection process is greatly decreased, therefore in solution The relative amount ratio that impurity is polluted in solution after being reacted with wafer is also greatly improved, and so can effectively be dropped The accuracy class requirement of the low detecting instrument that pollution impurity content is detected to solution after reaction, meanwhile, it can effectively improve In the detection sensitivity and precision of detecting instrument accuracy class under the same conditions.Secondly, the wafer processing device in the application It is a kind of wafer processing device dedicated for detection wafer impurity, it, can be under automation control with sampling device It directly selects different processing solutions and is delivered to complete the reaction treatment with wafer in semiconductor processing device, and going out sample The solution after being reacted is collected in device.Operating personnel the wafer that need to be detected need to be only placed into semiconductor processing device with And take out out the solution in sampling device and pass through corresponding detecting instrument and detect the content concn that can obtain impurity in wafer, In this way, greatly reducing the detecting step and working strength of operating personnel, the efficiency that defects inspecting is carried out to wafer is improved.

2nd, the wafer processing device in the application realizes the accurate control to the liquid flowing parameters of sampling, with suitable The requirements of semiconductor processing device are answered, such as：Liquid volume, flowing velocity, class of liquids etc.；Meanwhile modular structure Each block is allow easily to expand or delete, operating personnel can grasp rapidly the operating method and skill of system.

Description of the drawings

Attached drawing described here is only used for task of explanation, and is not intended to limit disclosed in the utility model in any way Range.In addition, shape and proportional sizes of each component in figure etc. are only schematical, it is used to help the reason to the utility model Solution is not the specific shape and proportional sizes for limiting each component of the utility model.Those skilled in the art is new in this practicality Under the introduction of type, various possible shapes and proportional sizes can be selected to implement the utility model as the case may be.

Figure 1A is the structure diagram of wafer processing device in the utility model；

Figure 1B is the system connection diagram of wafer processing device in the utility model.

Fig. 2 is the dimensional structure diagram of fluid carrying module in one embodiment in Figure 1A；

Fig. 3 A are the stereochemical structure of pipe controller and fluid flow rate control unit in one embodiment in Figure 1A Schematic diagram

Fig. 3 B are the plane projection view of the pipe controller and fluid flow rate control unit in Fig. 3 A；

Fig. 4 is the structure diagram of electric control module in one embodiment in Figure 1A；

Fig. 5 A are the dimensional structure diagram of ventilation module in one embodiment in Figure 1A；

Fig. 5 B are the schematic cross-sectional view of ventilation module in one embodiment in Figure 1A；

Fig. 6 is the schematic diagram of another embodiment of the semiconductor processing device in the utility model；

Fig. 7 a are the schematic cross-sectional view of semiconductor processing device in one embodiment in the utility model；

Fig. 7 b are the enlarged diagram of the circle A in Fig. 7 a；

Fig. 7 c are the enlarged diagram of the circle B in Fig. 7 a；

Fig. 8 a are the vertical view of first chamber portion in one embodiment in the utility model；

Fig. 8 b are the enlarged diagram of the circle C in Fig. 8 a；

Fig. 8 c are the enlarged diagram of the circle D in Fig. 8 a；

Fig. 8 d are the schematic cross-sectional view along the hatching A-A in Fig. 8 a；

Fig. 8 e are the enlarged diagram of the circle E in Fig. 8 d；

Fig. 8 f are the enlarged diagram of the circle F in Fig. 8 a；

Fig. 9 a are the vertical view of second chamber portion in one embodiment in the utility model；

Fig. 9 b are the enlarged diagram of the circle G in Fig. 9 a；

Fig. 9 c are the enlarged diagram of the circle H in Fig. 9 a；

Fig. 9 d are the schematic cross-sectional view along the hatching B-B in Fig. 9 a；

Fig. 9 e are the enlarged diagram of the circle I in Fig. 9 d；

Fig. 9 f are the enlarged diagram of the circle J in Fig. 9 a；

Figure 10 a are the vertical view of first chamber portion in another embodiment in the utility model；

Figure 10 b are the enlarged diagram along the circle M in Figure 10 a；

Figure 11 A are the stereoscopic schematic diagram of semiconductor processing module in another embodiment in Figure 1A；

Figure 11 B are the schematic front view of the semiconductor processing module in Figure 11 A；

Figure 12 is the stereoscopic schematic diagram of lower box device in another embodiment in Figure 11 A；

Figure 13 is the first chamber plate assembling schematic diagram with the lower box device in another embodiment in Figure 11 A；

Figure 14 is the reverse side stereoscopic schematic diagram of plug-in unit in another embodiment in Figure 11 A；

Figure 15 is the stereoscopic schematic diagram of top box device in another embodiment in Figure 11 A；

Figure 16 is the schematic top plan view of top box device in another embodiment in Figure 11 A；

Figure 17 is the schematic top plan view of partition board in another embodiment in Figure 11 A.

Figure 18 A are the dimensional structure diagram of equipment support device in one embodiment in the utility model；

Figure 18 B are that the plane of the equipment support device in Figure 18 A regards master map；

Figure 18 C are the plane left view of the equipment support device in Figure 18 A；

Figure 19 is the assembling dimensional structure diagram of equipment support device in another embodiment in the utility model.

Specific embodiment

With reference to the description of attached drawing and specific embodiment of the present invention, the utility model can be clearly understood Details.But specific embodiment of the present utility model described here, it is only used for explaining the purpose of this utility model, without It can be understood as being the limitation to the utility model in any way.Under the introduction of the utility model, technical staff is contemplated that Arbitrary possible deformation based on the utility model, these are regarded as belonging to the scope of the utility model.Need what is illustrated It is that when element is referred to as " being set to " another element, it can be directly on another element or there may also be placed in the middle Element.When an element is considered as " connection " another element, it can be directly to another element or can Centering elements can be existed simultaneously.Term " installation ", " connected ", " connection " should be interpreted broadly, for example, it may be mechanical connection or Connection inside electrical connection or two elements, can be directly connected, can also be indirectly connected by intermediary, For the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.Made herein Term " vertical ", " horizontal ", " on ", " under ", "left", "right" and similar statement simply to illustrate that mesh , it is unique embodiment to be not offered as.

Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the application The normally understood meaning of technical staff is identical.The term used in the description of the present application is intended merely to description tool herein The purpose of the embodiment of body, it is not intended that in limitation the application.Term as used herein "and/or" includes one or more The arbitrary and all combination of relevant Listed Items.

In order to handle wafer, and then early-stage preparations are carried out to carry out pollution defects inspecting to wafer, Especially set out a kind of dedicated for detecting the wafer processing device of wafer impurity in the application, Figure 1A is wafer in the utility model The structure diagram of processing unit, Figure 1B are the system connection diagram of wafer processing device in the utility model, and Fig. 7 a are this The schematic cross-sectional view of semiconductor processing device in one embodiment in utility model, Fig. 7 b are the amplification of the circle A in Fig. 7 a Schematic diagram, Fig. 7 c are the enlarged diagram of the circle B in Fig. 7 a, as shown in Figure 1A, Figure 1B, Fig. 7 a to 7c, the wafer processing device 1 includes：Semiconductor processing device 10, semiconductor processing device 10 include first chamber portion 120 and can be relative to first chamber portions The second chamber portion 110 moved between open and closed positions, between first chamber portion 120 and second chamber portion 110 Micro chamber is formed with, first chamber portion 120 has from external logical with connected with micro chamber first across the first chamber portion 120 Hole 125 and oneself outside pass through second through-hole 126 of the first chamber portion 120 to be connected with micro chamber；Sampling device 60, sample introduction dress Put 60 include the fluid flow rate control unit 601 that can be connected with first through hole 125 and with 601 phase of fluid flow rate control unit The treatment fluid selecting unit 602 of connection, treatment fluid selecting unit 602 can select this institute in the multiple fluid of offer The type of fluid needed, fluid flow rate control unit 601 are defeated to semiconductor processing device for control process fluid selecting unit 602 The flow velocity of the fluid sent；Go out sampling device 70, going out sampling device 70 can be connected with the second through-hole 126 of semiconductor processing device 10, It is used for the reaction solution of the second through-hole 126 discharge collected from semiconductor processing device.

When needing to handle semiconductor crystal wafer the impurity content to detect crystal column surface or inside, wafer is placed In the micro chamber of semiconductor processing device 10, and first chamber portion 120 and second chamber portion 110 is caused to be in closed state, Then it selects this time to need in a variety of ready reaction solutions by the treatment fluid selecting unit 602 in sampling device 60 again The type of fluid wanted, the fluid needed under the action of fluid flow rate control unit 601 is in the state of controllable according to default stream Speed is conveyed into the first through hole of semiconductor processing device to flow into micro chamber, which is can be to crystal column surface or inside The solution to dissolve the impurity for obtaining crystal column surface or inside is handled, then the solution is in fluid flow rate control unit 601 Control under reacted in controlled conditions being in contact with the crystal column surface being placed in micro chamber, obtained with dissolving brilliant Circular surfaces or the impurity of inside.When amount of solution is met the requirements in being conveyed into micro chamber, can stop continuing into micro chamber defeated Give the solution.Solution after reaction is discharged, then flow into out sampling device 70 from the second through-hole 126 of semiconductor processing device 10 In to be collected.The solution that operating personnel can be easily directly taken out out in sampling device 70 passes through corresponding detecting instrument 80 Detection is to obtain the content concn of impurity in solution, so that it is determined that whether wafer meets the requirements.When being passed through amount of solution in micro chamber It is less when can not voluntarily be discharged from the second through-hole 126 of semiconductor processing device 10, can in micro chamber is conveyed into amount of solution When meeting the requirements, by the selection of the treatment fluid selecting unit 602 in sampling device 60, select other fluids, for example, not with The gas of wafer reaction, then the control by fluid flow rate control unit 601, to micro- in a state that gas velocity is met the requirements Gas is conveyed in chamber, gas is flowed into from the first through hole 125 of semiconductor processing device 10 in micro chamber, so as to push micro chamber In solution advance, finally under the promotion of gas, solution after reaction is from 126 row of the second through-hole of semiconductor processing device 10 Go out, then flow into out in sampling device 70 to be collected.

Wafer processing device in the application uses the semiconductor processing device with micro chamber to handle wafer, phase Measuring for solution than for traditional processing unit, being used in entire detection process is greatly decreased, thus solution with The relative amount ratio of pollution impurity is also greatly improved in solution after wafer reaction, so can effectively be reduced The accuracy class requirement of the detecting instrument 80 of pollution impurity content is detected to solution after reaction, meanwhile, it can effectively improve In the detection sensitivity and precision of 80 accuracy class of detecting instrument under the same conditions.Secondly, the wafer-process dress in the application It is a kind of dedicated for detecting the wafer processing device of wafer impurity to put, and with sampling device 60, can be controlled in automation The reaction treatment with wafer is done directly under system, and the solution after being reacted is collected in sampling device is gone out.Operating personnel only need The wafer that need to be detected is placed into semiconductor processing device and taken out out solution in sampling device 70 by detecting accordingly Instrument 80, which detects, can obtain the content concn of impurity in wafer, in this way, greatly reduce operating personnel detecting step and Working strength improves the efficiency that defects inspecting is carried out to wafer.

Wafer processing device in the application also achieves the accurate control to the liquid flowing parameters of sampling, with suitable The requirements of semiconductor processing device 10 are answered, such as：Liquid volume, flowing velocity, class of liquids etc.；Meanwhile modular knot Structure allows each block easily to expand or delete, and operating personnel can grasp rapidly the operating method and skill of system.

In order to be better understood by the wafer processing device in the application, its all parts will be further explained below and Explanation.Fluid flow rate control unit 601 in sampling device 60 can be led to by the first of pipeline and semiconductor processing device 10 Hole 125 is connected.Treatment fluid selecting unit 602 in sampling device 60 is connected with fluid flow rate control unit 601, The various type of fluid being ready for can be automatically selected according to setting, when treatment fluid selecting unit 602 chooses certain one stream After body type, fluid flow rate control unit 601 brings into operation, and the fluid that treatment fluid selecting unit 602 is selected is controllable Under state according to preset flow rate by Pipeline transport to the first through hole 125 of semiconductor processing device.Treatment fluid selecting unit 602 can be there are many concrete form, for example, treatment fluid selecting unit 602 includes a plurality of various fluid phases with being ready for The pipeline of connection is both provided with a solenoid valve on each pipeline.When needing to select a certain fluid, need by with the fluid phase Solenoid valve on the pipeline of connection is opened, and the pipeline solenoid being connected with other fluids is closed, and treatment fluid is selected at this time Select unit 602 complete according to setting selected the type of fluid needed at this time.In another feasible embodiment, place A mechanical arm for carrying pipeline can be included by managing fluid selecting unit 602, when needing to select a certain fluid, in the fortune of mechanical arm Under turning, the pipeline on mechanical arm be inserted into filling needed in the container of a certain fluid or the source of supply of the fluid, when being not required to Will the fluid or when needing to switch to other fluid, under the operating of mechanical arm, the pipeline on mechanical arm can leave the stream Body is either inserted into the container or source of supply of another required fluid.Treatment fluid selecting unit 602 can be it is any can be right Type of fluid carries out the device of selection, does not do any restriction to it in this application.Fluid flow rate control unit 601 can be with place Pipeline in reason fluid selecting unit 602 is connected, and can include one or more pumps 27, it is defeated so just to have reached control To the purpose of the flow velocity of the fluid of semiconductor processing device micro chamber.

Sampling device 60 can also include so that the treatment fluid of fluid needed for the quantitative measurement for the treatment of fluid selecting unit 602 Dosing unit 603.In order to enable the total amount for being delivered to the solution of micro chamber in semiconductor processing device is met the requirements, treatment fluid Dosing unit 603 can acquire required fluid symbol after treatment fluid selecting unit 602 has selected suitable type of fluid The total amount of requirement is closed, so that fluid flow rate control unit 601 conveys the fluid of the total amount to micro chamber.Treatment fluid quantifies Unit 603 can be the container for having preset volume, be connected with fluid flow rate control unit 601, when treatment fluid selects After unit 602 has selected suitable type of fluid, which enters said vesse to meet preset volume, in this way, fluid The solution total amount that flow rate control unit 601 is delivered to micro chamber in semiconductor processing device can be controlled.

Wafer processing device in the application further includes pipe controller 20, pipe controller respectively with sampling device 60th, go out the first through hole 125 of sampling device 70 and semiconductor processing device 10, the second through-hole 126 is connected, pipe controller The second through-hole 126 of sampling device 10, the first through hole 125 of semiconductor processing device 10, semiconductor processing device can be controlled out And go out the mutual break-make between sampling device 60.The first through hole that pipe controller 20 passes through pipeline and semiconductor processing device 10 125 phases are connected.In order to control the opening and closing of the second through-hole 126 of semiconductor processing device, pipe controller 20 is again with partly leading Second through-hole 126 of body processing unit 10 is connected.Pipe controller 20 can be with the fluid flow rate control in sampling device 60 Other fluid providers that unit 601 processed is connected and/or is handled semiconductor crystal wafer micro chamber are connected, and pass through Fluid flow rate control unit 601 can control the speed of the fluid conveyed to pipe controller 20, which can be liquid Or gas.It can be to 20 trandfer fluid of pipe controller, then by pipe controller 20 by fluid flow rate control unit 601 Whether whether control fluid flow into fluid in 10 micro chamber of first through hole 125 and semiconductor processing device from the second through-hole 126 outflows.Meanwhile pipe controller 20 can also control whether fluid flow rate control unit 601 connects with the second through-hole 126 Lead to, go out whether sampling device 70 connects with first through hole, go out whether sampling device 70 connects with fluid flow rate control unit 601, with And the switching between above device connection.For example, the liquid reacted with semiconductor crystal wafer is controlled by fluid flow rate control unit 601 The inflow velocity of body, then flow into 125 corresponding pipeline of first through hole by opening in pipe controller 20 liquid so that Liquid is flowed into first through hole 125, and after the amount that the liquid of inflow is met the requirements, liquid is closed by pipe controller 20 Body flows into 125 corresponding pipeline of first through hole, and the second through-hole is opened again after liquid is reacted with semiconductor crystal wafer and to be met the requirements With going out the pipeline between sampling device 60 so that the solution after reacting in micro chamber is expelled to out sampling device 60.Pipe controller In can include a plurality of pipeline with valve and/or air valve, different pipelines be connected to sampling device 60, go out sampling device 70 And first through hole 125, the second through-hole 126 of semiconductor processing device, by valve with the break-make and difference of control piper Switching between pipeline.

As shown in figs.3 a and 3b, it illustrates fluid flow rate control units in pipe controller 20 and sampling device 60 601 one embodiment, pipe controller 20 can include support frame 21, be assembled on support frame 21 bottom substrate 22, With 22 spaced head substrate 23 of bottom substrate and two side substrates 24 and 25 apart from one another by setting, multiple valves 26.Fluid flow rate control unit 601 can include one or more pumps 27.In this embodiment, two side substrates 24 and 25 It being arranged in parallel, head substrate 23 and bottom substrate 24 are arranged in parallel, and bottom substrate 22 intersects with two side substrates 24 and 25, Head substrate 23 intersects with two side substrates 24 and 25.Bottom substrate 22, head substrate 23 and two side substrates 24 and 25 Centre cross a fluid space 28.

Multiple communications ports 261 are provided on the one end of valve 26, can be selective according to external control valve door 26 Two communications ports 261 is connected.Suction inlet 271 and a discharge of the setting there are one sucking fluid on the one end of pump 27 The outlet 272 of fluid.Each side substrate is equipped with one or more mounting holes (unmarked).Valve 26 is provided with connection The end of port 261 passes through the mounting hole on side substrate 24 to extend in fluid space 28, and the other end of valve 26 includes There is electrical cable (not shown), the electrical cable of valve 26 is located at the side in the nonfluid space 28 of side substrate 24.Pump 27 is set The end for being equipped with suction inlet 271 and outlet 272 passes through the mounting hole on side substrate 25 to extend in fluid space 28, pump 27 The other end include electrical cable (not shown), the electrical cable for pumping 27 is located at the nonfluid space 28 of side substrate 25 Side.

When in use, the connection end that can utilize pipeline that will pump 27 suction inlet 271, the outlet 272 of pump 27, valve 26 Mouth 261, the first through hole 125 of micro chamber, the second through-hole 126 of micro chamber and/or the fluid of fluid carrying module carrying 30 connect It is logical.In this way, fluid can be delivered to micro chamber by pipeline and/or valve 26 under the driving of pump 27, from micro chamber stream The fluid gone out by pipeline and/or valve 26 be delivered in go out sampling device 70 in.

A feature or advantage for pipe controller 20 and fluid flow rate control unit 601 in the utility model exists In：Since the end for being provided with suction inlet 271 and outlet 272 of pump 27 extends to fluid space 28 across side substrate 25 Interior, the end for being provided with communications ports 261 of valve 26 is extended to across side substrate 24 in fluid space 28, so that pump 27 suction inlet 271 and outlet 272 and the communications ports 261 of valve 26 are oppositely arranged, so as to shorten pump 27 as far as possible Suction inlet and outlet and the distance of the communications ports of valve 26, facilitate them to be connected by pipeline, space availability ratio is very high, makes Whole volume is obtained to become smaller.

Another feature or advantage of pipe controller 20 and fluid flow rate control unit 601 in the utility model exist In：Bottom substrate 22, head substrate 23 and the two side substrates 24 and 25 of pipe controller 20 define one relatively For the fluid space 28 of closing, the fluid line of pipe controller 20 all passes through from this fluid space 28, facilitates these It the management of fluid line and is exchanged with other modules.In addition, if there is a situation where fluid leakage or injection, leakage or injection Fluid big city be limited in fluid space 28, it is convenient to carry out in time, effectively handle, while can also be avoided as much as Leakage is diffused into other regions, causes the damage of other components and destruction and generates other safety problems.For example, fluid leads to Often it is acid or akaline liquid, if not setting the fluid space of closing, situations such as in case of liquid leakage, acid or alkalinity Liquid is likely to the electrical cable and other parts of corrosion valve or pump, so as to induce safety accident or damage equipment.

In a preferred embodiment, wafer processing device can also include electric control module 40, electrical control Module 40 is used to control semiconductor processing device 10, pipe controller 20 and sampling device 60 etc..Electric control module 40 For electrical cable (not shown), the electrical cable of valve 26, the pump 27 with the driving device in semiconductor processing device 10 The electrical cable of electrical cable and/or air valve is electrically connected, so as to realize to the drive in semiconductor processing device 10 Dynamic device, valve 26, pump 27 and/or air valve are controlled.It illustrates one embodiment of electric control module 40, electricity by Fig. 4 Gas control module 40 includes valve positioner 41, drive control device 42, pump controller 43 and air valve controller 44.Valve positioner Whether 41 can be connected with each valve 26 in control piper control device 20, such as each valve 26, which communications ports and Which communications ports connection etc..Drive control device 42 controls the driving device in semiconductor processing module 10, for example can control Driving device so that micro chamber is in an open position up and down, can load and/or remove at this time the semiconductor crystal wafer, can also control Driving device processed so that micro chamber is in the closed position up and down.Pump 27 in 43 fluid flow rate control unit 601 of pump controller It is controlled, for example is turned on and off, for another example various parameters, such as hydraulic pressure, rotating speed etc..Air valve controller 44 can also be controlled Air valve in pipe controller 20 is controlled, for example is turned on and off, controls various parameters, such as air pressure for another example Deng.Electric control module 40 can also include monitoring unit, and monitoring unit is according to the sensing in semiconductor processing device 10 Device, the sensor gone out in sampling device are set to the inductive signals of sensor of other positions and are monitored in real time, such as：When letting out Dew sensor is alarmed or is reminded when having detected liquid leakage.

For the existing semiconductor processing equipment of bulky complex, the wafer processing device in the utility model is to dress The composition put carries out rational modularized design, which has the following advantages that：1st, production line external equipment portion is realized The maintenance of part and malfunction elimination, repair；When equipment breaks down, it is only necessary to will be problematic with preprepared spare part module Module replace can restorer operation, as small as possible influence the entire production line manufacturing schedule, change Module can become the spare part module of failure next time after strictly check, repair and safeguard；2nd, facilitate the assembling of equipment And carrying；3rd, the assembling form diversification of module, can be according to different manufacturers, different production lines and other requirements, the change of condition Change is assembled；4th, the expansion and extension of application range, when production technology needs to change, it is only necessary to some mould of equipment Block is adjusted or is replaced after redesigning old module, such as：With the semiconductor processing device that can handle 300 millimeters of wafers The semiconductor processing device of 200 millimeters of wafers can only be handled by changing.

In a preferred embodiment, wafer processing device can also include：Fluid carrying module 30, fluid bearings What module 30 was used to carrying various unused fluids and/or processed semiconductor crystal wafer has used fluid.Partly leading in the application In body processing unit 10 the required fluid used can by predetermined fluid service real-time feed, using as fluid provider, Special setting fluid carrying module 30 can not be had at this time to carry various fluids.In order to which the wafer processing device can be to wafer Quick processing is carried out in order to detect, can also include fluid carrying module in wafer processing device in this application thus 30, fluid carrying module 30 is used to carry the required chemicals of various processing semiconductor crystal wafers, ultra-clean water or other streams Body (may be collectively referred to as be not used fluid) and/or the processed semiconductor crystal wafer of carrying have used fluid, and fluid can be liquid, Can also be gas.Treatment fluid selecting unit 602 in sampling device 60 can select fluid carrying module 30 according to demand Interior fluid, so that fluid flow rate control unit 601 is delivered in the micro chamber of semiconductor processing device.As shown in Fig. 2, it shows One embodiment of fluid carrying module 30 is gone out, fluid carrying module 30 includes support frame 31 and is positioned in support frame 31 Multiple containers 32, container can accommodate to handle the required various unused fluids of semiconductor crystal wafer and/or processed half The various of semiconductor wafer have used fluid.For example ultra-clean water is contained in container, being filled in another container will be for handling The chemical pretreatment solution of wafer, then separately there are one contain to give up using what recycling after the water-treated semiconductor crystal wafer of ultra-clean obtained in container Liquid.Certainly, the wafer processing device is in the processing before being detected to wafer, and carrying out that treated to wafer, solution is direct It is expelled to out in sampling device and is collected, and can not be positioned in the container 32 of fluid carrying module 30.

In common application, semiconductor processing device 10 is connected by pipeline with pipe controller 20, pipeline control Device 20 is connected by fluid flow rate control unit 601 with treatment fluid selecting unit 602.Electric control module 40 passes through electricity Property cable is electrical connected with the driving device in semiconductor processing module 10, the pump in fluid delivery module 20, valve, air valve, The connection relation of modules is very simple, assembles and is very convenient to.In one embodiment, modules can be according to Position relationship shown in figure 1A puts together modules, and fluid carrying module 30 is positioned over bottommost, pipeline control dress Put 20 and fluid flow rate control unit 601 be positioned over the top of fluid carrying module 30, semiconductor processing device 10 is positioned over stream The top of body delivery module 20, electric control module 40 are positioned over pipe controller 20,601 and of fluid flow rate control unit The side of fluid carrying module 30.

In a preferred embodiment, wafer processing device 1 further includes the detector being connected with going out sampling device 70 Device 80, to carry out impurity content detection to going out the reaction solution collected in sampling device 70.By the above-mentioned means, this wafer-process fills It puts to be done directly and the impurity content for the reaction solution collected in sampling device 70 is detected.

In a preferred embodiment, wafer processing device can also include：Ventilation module 50, ventilation module 70 are used In to semiconductor processing device 10, sampling device 60, pipe controller 60, fluid carrying module 30 and/or going out sampling device 70 It is aerated ventilation.Ventilation module 50 is placed on semiconductor processing device 10, pipe controller 20, sampling device 60, stream Between body carrier module 30 and electric control module 40, for being filled to semiconductor processing device 10, pipe controller 20, sample introduction It puts and is aerated at 60 and/or electric control module 30.In this way, the chemical composition in the air in modules can be reduced Concentration reduces interfering with each other for each intermodule air, improves safety, extends electric component service life.

Fig. 5 A are the dimensional structure diagram of ventilation module 50 in one embodiment in Figure 1A；Fig. 5 B are in Figure 1A The schematic cross-sectional view of ventilation module in one embodiment.As fig. 5 a and fig. 5b, ventilation module 50 includes the first side wall 51st, opposite second sidewall 52, first with the adjoining of the top of the first side wall 51 and second sidewall 52 are spaced with the first side wall 51 Ventilation interface 53, with the second ventilation interface 54 of the bottom contiguous of the first side wall 51 and second sidewall 52 and positioned at the first side Ventilated cavity (not identifying) between wall 51, second sidewall 52, the first ventilation interface 53, the second ventilation interface 54.At semiconductor It is adjacent with the first side wall 51 of ventilation module 50 to manage device 10, pipe controller 20, sampling device 60, fluid carrying module 30 It connects, control module 40 and the second sidewall 52 of ventilation module 50 are adjacent.

Ventilation module 50 further includes multiple vent ports 55 of the first side wall 51 through ventilation module 50, through ventilation One end of the vent port 55 of the first side wall 51 of module 50 is connected with ventilated cavity, the other end respectively with semiconductor processing device 10th, pipe controller 20, sampling device 60, fluid carrying module 30 connect, so as to be realized respectively to semiconductor processing device 10th, the ventilation of pipe controller 20, sampling device 60, fluid carrying module 30.Ventilation module 50 has been further included through ventilation Multiple vent ports (not shown) of the second sidewall 52 of module 50, through the vent port of the second sidewall 52 of ventilation module One end is connected with ventilated cavity, and the other end is connected with control module 40, so as to realize the ventilation to control module 40 respectively, also may be used To mention to used in the heat dissipation of control module 40.In this way, the concentration of the chemical composition in the air in modules can be reduced, Improve safety.Ventilation module 50 can also include what is be connected with the first ventilation interface 53 and/or the second ventilation interface 54 Wind turbine (not shown), can strengthen ventilation effect in this way.

In a preferred embodiment, wafer processing device 1 can also include：Filter (to show in figure), mistake Filter can be connected between sampling device 60 and pipe controller 20, be used for from the fluid that sampling device 60 flows out into Row filtering, filter can also be connected between fluid bearings device 30 and sampling device 60, be used for being filled from fluid bearings The fluid diameter for putting 30 outflows is filtered.Filter can also be provided only on conveying gas pipeline on, so only to from into The gas that sampling device 60 is conveyed to pipe controller 20 is filtered, of course, filter may be multiple, is arranged on It is conveyed on different fluid circuits into pipe controller 20 from sampling device 60, in this way, can be carried out to various fluids Corresponding filtration treatment.

Fig. 6 is the structure diagram of wafer processing device in another embodiment in the utility model.Wafer-process Device can include multiple semiconductor processing devices 10, multiple pipe controllers 20, multiple sampling devices 60 and multiple electricity Gas control module 40.In this instance, semiconductor processing device 10 is three, respectively first, second, and third semiconductor processes Device, pipe controller 20 are three, and respectively first, second, and third fluid delivery module, sampling device 60 is three, Respectively first, second, and third sampling device 60, electric control module 40 are three, respectively first, second, and third electricity Gas control module.Each semiconductor processing device 10 is connected by pipeline pipe controller 20 corresponding with one, then and into Sampling device 60 connects, and the first electric control module 40 controls three semiconductor processing devices 10, and the second electric control module 40 is controlled Three pipe controllers 20 are made, third electric control module 40 controls three sampling devices 60.In this embodiment, it can wrap Fluid carrying module 30 is included, fluid carrying module 30 can not also be set.One of which semiconductor processing device (such as the Two semiconductor processing devices) when breaking down or needing to safeguard, can first with the 4th spare semiconductor processing device by this Two semiconductor processing devices replace, and carry out troubleshooting and/or necessary maintenance to the second semiconductor processing device again later, Influence of the process to production run of breaking down and fix a breakdown can be reduced as far as possible in this way.Likewise, one of which It, can also be first with the spare the 4th when pipe controller 20 (such as second pipe controller) breaks down or needs to safeguard Pipe controller replaces second pipe controller, carries out troubleshooting to the second pipe controller again later And/or it safeguards.

Fig. 7 a-9f show one or more detailed embodiments of semiconductor processing device 10, with reference to Fig. 7 a-9f It describes in detail to semiconductor processing device 10.Semiconductor processing device 10 in the present embodiment, can accurately control The flow direction for the treatment of fluid and flowing velocity, while the dosage for the treatment of fluid can be greatlyd save.As shown in Figure 7a, half Conductor processing unit 10 includes second chamber portion 110 and first chamber portion 120.Second chamber portion 110 includes second chamber plate 111 With the first flange 112 extended downwardly from the periphery of second chamber plate.First chamber portion 120 includes first chamber plate 121 With the first groove 122 formed on the periphery of first chamber plate 121 to lower recess.

Second chamber portion 110 can between open and closed positions be moved relative to first chamber portion 120.Second Chamber portion 110 relative to first chamber portion 120 it is in an open position when, pending semiconductor crystal wafer can be positioned over the first chamber Pending semiconductor crystal wafer can be taken out in the inner wall surface in room portion 120 or from the inner wall surface in first chamber portion 120. When second chamber portion 110 is in the closed position relative to first chamber portion 120, in second chamber portion 110 relative to the first chamber When room portion 120 is in the closed position, the first flange 112 coordinates with the first groove 122, in 110 and first chamber of second chamber portion The micro chamber of sealing is formed between room portion 120, pending semiconductor crystal wafer can be contained in micro chamber, wait for and subsequently being located Reason.

Fig. 8 a are the vertical view of first chamber portion 120 in one embodiment in the utility model.Fig. 8 b are in Fig. 8 a Circle C enlarged diagram.Fig. 8 c are the enlarged diagram of the circle D in Fig. 8 a.Fig. 8 d are along the hatching A-A's in Fig. 8 a Schematic cross-sectional view.Fig. 8 e are the enlarged diagram of the circle E in Fig. 8 d.Fig. 8 f are the enlarged diagram of the circle F in Fig. 8 a.With reference to figure Shown in 8a-8f, first chamber portion 120 has what the recess of inner wall surface 123 from the first chamber portion 120 towards micro chamber was formed Groove track 124, from the external first through hole 125 that the first chamber portion is passed through connect with the first position with groove track 124 and oneself Outside passes through the second through-hole 126 that the first chamber portion is connected with the second position with groove track 124.The section of groove track 124 It can be U-shaped, V-arrangement or semicircle, can also be other shapes.Number of openings in groove track 124 can be greater than or equal to 1 It is a.

As shown in Fig. 7 a, 7b and 7c, second chamber portion 110 relative to first chamber portion 120 be located at closed position and When pending semiconductor crystal wafer 200 is contained in micro chamber, a surface (lower surface) of pending semiconductor crystal wafer 200 and shape Inner wall surface 123 into groove track 124 leans, at this time groove track 124 by the surface of pending semiconductor crystal wafer 200 resistance Gear forms a closed channel, this closed channel is communicated by 125 and second through-hole 126 of first through hole with outside.It is applying When, treatment fluid can enter closed channel by first through hole 125, and the fluid into closed channel can be along closed channel Guiding moves ahead, and treatment fluid can touch and handle the subregion on the surface of pending semiconductor crystal wafer 200 at this time, processing The fluid for crossing the surface of pending semiconductor crystal wafer 200 can be flowed out and be extracted by the second through-hole 126.In this way, so not Flow direction and the flowing velocity for the treatment of fluid can be only accurately controlled, the dosage for the treatment of fluid can also be greatlyd save.

In one embodiment, as shown in Fig. 8 a, 8b and 8c, groove track 124 is around helical form is formed, wherein first is logical Hole 125 is located at spiral helicine groove track central area (region of circle D), and the second through-hole 126 is located at spiral helicine groove track 124 Neighboring area (region of circle C).First through hole 125 is used as entrance, and the second through-hole 126 is used as outlet. In other embodiments, first through hole 125 can also be used as to export, the second through-hole 126 is used as to enter Mouthful.

In one embodiment, as shown in Fig. 8 d, 8e and 8f, first through hole 125 includes directly communicating with groove track 124 And compared with groove track 124 it is deeper, it is broader first buffering oral area 125a and with this first buffering oral area 125a directly communicate first Through-hole section 125b.Due to being provided with the first buffering oral area 125a, can to avoid treatment fluid by first through hole 125 enter just Excessive velocities cause the central area of semiconductor crystal wafer excessively to be handled.Second through-hole 126 includes directly communicating with groove track 124 And compared with groove track 124 it is deeper, it is broader second buffering oral area 126a and with this second buffering oral area 126a directly communicate second Through-hole section 126b.Due to being provided with the second buffering oral area 126a, it can prevent treatment fluid cannot be in time from the second through-hole 126 It discharges and overflows.Preferably, the first buffering oral area 125a can be conical socket, and the second buffering oral area 126a can be cylinder Groove.

Fig. 9 a are the vertical view of second chamber portion 110 in one embodiment in the utility model；Fig. 9 b are in Fig. 9 a Circle G enlarged diagram；Fig. 9 c are the enlarged diagram of the circle H in Fig. 9 a；Fig. 9 d are along the hatching B-B's in Fig. 9 a Schematic cross-sectional view；Fig. 9 e are the enlarged diagram of the circle I in Fig. 9 d；Fig. 9 f are the enlarged diagram of the circle J in Fig. 9 a.With reference to figure Shown in 9a to 9f, second chamber portion 110 include second chamber plate 111 and extend downwardly from the periphery of second chamber plate 111 and Into the first flange 112.Second chamber portion 110 has 113 concave shape of inner wall surface from the second chamber portion towards micro chamber Into groove track 113, be formed in cell wall (the adjacent groove track of the groove track 114 in the inner wall surface 113 in second chamber portion Part between 114) (adjacent is recessed with the cell wall of groove track 124 that is formed in the inner wall surface 123 in first chamber portion 120 Part between conduit 124) corresponding (Fig. 7 b, Fig. 7 c).In this way, in second chamber portion 110 relative to 120, first chamber portion When closed position and pending semiconductor crystal wafer 200 are contained in micro chamber, the slot of the groove track 114 in second chamber portion 110 Wall can compress the corresponding position of pending semiconductor crystal wafer 200, and enable pending semiconductor crystal wafer 200 more tightly It is resisted against on the cell wall of groove track 124 in first chamber portion 120 so that the closed performance of the closed channel eventually formed is more preferable. In addition, the cell wall for the groove track 114 being formed in the inner wall surface 113 in second chamber portion is (between adjacent groove track 114 Part) with the cell wall of the groove track 124 that is formed in the inner wall surface 123 in first chamber portion 120 (adjacent groove track 124 it Between part) staggered can also arrange.

Figure 10 a are vertical view of the first chamber portion in another embodiment 620 in the utility model；Figure 10 b are edge The enlarged diagram of circle M in Figure 10 a.It is formed from the first chamber portion 620 towards the inner wall surface 623 of micro chamber recess Groove track 624 is multiple, there is 5 in Figure 10 a, can be that other numbers are a in other embodiments, each groove track 624 It is corresponding that there are one first through hole 625 and second through-holes 626.The different groove tracks 624 in first chamber portion 620 are located at inner wall In the different zones on surface 623.It can be directed to different regions in this way and carry out different processing, they are independent mutually.

1A and Figure 11 B are please referred to Fig.1, which respectively show the semiconductor processing device 10 in the utility model at another Stereoscopic schematic diagram and front schematic view in embodiment.Briefly, semiconductor processing device 10 includes flattening correction device 1100th, microcavity room module 1200, driving device 1300 and stand column device 1400.First three mould various components in the block are mutual by four Parallel stand column device 1400 is fixed, supports or is guided, and is respectively driving device from lower to upper along stand column device 1400 1300th, microcavity room module 1200 and smooth means for correcting 1100.Wherein microcavity room module 1200 includes a processing semiconductor crystal wafer Micro chamber, micro chamber includes second chamber plate 1220 and first chamber plate 1260, and second chamber plate 1220 is by top box device 1240 supports, and the flattening correction device 1100 by being positioned above is fixed in top box device 1240；Correspondingly, the first chamber Room plate 1260 is supported by lower box device 1280, and lower box device 1280 is supported and driven by the driving device 1300 being disposed below again It is dynamic.

Driving device 1300 can drive lower box device 1280 to be guided according to stand column device 1400 and relative to top box device 1240 It is mobile, it can open or close top box device 1240 and lower box device to load and remove semiconductor die bowlder when needs 1280, it can also open or close the micro chamber that second chamber plate 1220 and first chamber plate 1260 are formed.When closing microcavity During room, chemical reagent and other fluids can be introduced inside micro chamber by the entrance of micro chamber for the semiconductor die in it Circle carries out chemical analysis, cleaning, etching and other processing, and after being disposed, chemical reagent and other fluids is passed through micro- Draw micro chamber in the outlet of chamber.

Driving device 1300 includes bottom plate 1320, the first intermediate plate 1340 above bottom plate, position successively from bottom to top The second intermediate plate 1360 above the first intermediate plate 1340 and the upper plate 138 above the second intermediate plate 1360.Bottom plate 1320th, the cylindrical cavity that the first intermediate plate 1340, the second intermediate plate 1360 and upper plate 1380 are formed, inner space Driver can be accommodated, driver is product more mature in the prior art, such as air impeller, similarly, also may be used To use other such as drivers of Mechanical Driven, electric drive or hydraulic-driven principle.It should be understood that work as driving When device generates upward driving force, the second intermediate plate 1360 and upper plate 1380 can be driven by the driving force of driver and to moving up It is dynamic；When driver generates downward driving force, the second intermediate plate 1360 and the meeting of upper plate 1380 are by the driving force of driver and certainly Body gravity drives and moves down, so as to which micro chamber be made to complete the transformation from opening state to closed state.Easy full of beard and, In another embodiment, 1320 and first intermediate plate 1340 of bottom plate, which can be integrally formed making, becomes one piece of bottom plate；The Two intermediate plates 1360 and upper plate 1380, which can combine to make, becomes one piece of top plate.That is, driving device 1300 and being regardless of Embodiment of the mud described in above-described embodiment all may be used as long as can reach same or more preferably effect embodiment.

The first chamber that microcavity room module 1200 includes lower box device 1280 successively from bottom to top, supported by lower box device 1280 Room plate 1260, partition board 1250, the top box device 1240 of the top of partition board 1250 and the second chamber plate that is supported by top box device 1240 1220.Lower box device 1280 and the first chamber plate 1260 supported by lower box device 1280 can be under the drivings of driving device 1300 It is moved up along the guiding of stand column device 1400.Partition board 1250,1240 and of top box device of 1250 top of partition board The second chamber plate 1220 supported by top box device 1240 is usually stationary, is only carried out by flattening correction device 1100 related The slightly adjustment of planarization, the related details will hereafter be described in detail.Instantly it box device 1280 and is supported by lower box device 1280 First chamber plate 1260 moved up under the driving of driving device 1300 along the guiding of stand column device 1400 and with the second chamber After room plate 1220 and top box device 1240 are closed, micro chamber will be formed.

Figure 12 be lower box device 1240 in one embodiment 7000 stereoscopic schematic diagram.The shape of lower box device 7000 is big It is box-like for the uncovered of square in bottom surface on body.Include four corresponding to stand column device 1400 in the quadrangle of lower box device 7000 Column position hole 7020.The bottom surface of lower box device 7000 is thicker, and includes relative to the one side of top box device 1240 there are three inclination angle Slope 7040 identical with angled manner, arranged side by side and of same size is spent, the floor design including slope is used to collect herein The chemical agent or other fluids for the first chamber plate water clock being positioned above.By above-mentioned slope, chemicals or The final flowable bottom of slope to slope 7040 of other fluids.The water conservancy diversion for coordinating the bottom of slope 7040 of connection slope again at this time is recessed The device of slot, hole, pipeline or storage box etc collects the fluid.

Simultaneously it should be appreciated that the box wall of 7040 direction of bottom of slope of odd number slope lacks what is be not present, and other three boxes The inner wall position that wall 7060 is contacted with bottom surface is recessed to form a groove 7070 to horizontal direction.First chamber plate 1280 can be via The box wall position of missing slips into lower box device 7000 and by bottom surface branch along 7070 level of groove in other box walls 7060 Support.Similarly, it can also be slided when first chamber plate 1280 is located in lower box device 7000 along groove 7070, from the box wall of missing Slide out lower box device 7000 in position.Four sides of lower box device 7000 are also respectively formed with the notch 7080 of rectangle.

3 are please referred to Fig.1, it illustrates assembling of the first chamber plate 8000 in one embodiment with lower box device 7000 to show It is intended to.Although first chamber plate 8000 is usually integrally formed.First chamber plate 8000 includes lower part 8200 and positioned at lower part Top 8400 on 8200.The size and edge thickness of lower part 8200 correspond respectively to the box wall 7060 of lower box device 7000 The distance between and groove 7070 width.So that first chamber plate 8000 can be along in the box wall 7060 of lower box device 7000 Groove 7070 slides.Cavity wall is formed on top 8400, cavity wall surrounds open cavity, and the bottom surface of cavity is the lower work of micro chamber Face.

It should be appreciated that first chamber plate 8000 is slipped into or is removed by the way of pullable, it can be very It is easily loaded and removes.Since the size of semiconductor crystal wafer is divided into 4 inches, 5 inches, 6 inches, the equal-specifications such as 8 inches, Add man-hour requirement according to the matched first chamber plate of various sizes of wafer replacement.Meanwhile first chamber plate 8000 slide into When entering lower box device 7000, it can also (as illustrated in figure 11A) be sticked in lower box device, schemed using a plug-in unit 1600 Reverse side stereoscopic schematic diagram of the plug-in unit 1600 in one embodiment 9000 is shown in 14.The both sides of plug-in unit 9000 include and lower box The 7070 corresponding fin 9020 of groove of device 7000, in the bottom of plug-in unit 9000 namely diagram above include corresponding to even The protrusion 9040 of number slope and the recess 9060 of odd number slope are constructed with the bottom surface of corresponding lower box device 7000.It is apparent that By the fixed function of plug-in unit 9000, first chamber plate 8000 can be fixed in lower box device 7000.

Second chamber plate 1220 includes general symmetry in the structure of first chamber plate 8000 substantially.Second chamber plate 1220 include square top and lower part in disk form, those skilled in the art by Figure 12 be highly susceptible to think and To the construction of second chamber plate 1220, therefore the accompanying drawings of second chamber plate 1220 are omitted herein.Obviously, second chamber plate The length of side on the top of 1220 square and the diameter of disc lower part can or phases identical with first chamber plate 8000 Closely, and on lower part cavity wall is formed with, cavity wall surrounds open cavity, and the bottom surface of cavity is the upper working face of micro chamber.It should recognize It arrives, when the cavity wall of first chamber plate 8000 and the cavity wall of second chamber plate are closed or when being close to, wherein one can be formed for holding The cavity of nano semiconductor wafer.

Figure 15 and Figure 16 respectively illustrates stereoscopic schematic diagram of the top box device 1240 in one embodiment 10000 and looks up Figure.The shape of top box device 10000 substantially bottom is box-packed for the uncovered of square.The quadrangle difference of top box device 10000 The center portion for having 10200 bottom of column position hole for corresponding to stand column device 1400 includes the lower part slightly larger than second chamber plate Circular cavity 10400, circular cavity 10400 include the circumference fin 10420 for extending downwardly out bottom.And by including three The box-like space to match with the top of second chamber plate 1220 of a box wall 10600, formation can closely accommodate second chamber plate 1220 structure.By the structure, support that second chamber plate 1220 can be stablized by top box device 10000.

Figure 17 shows schematic top plan view of the partition board 1250 in one embodiment 12000.The shape of partition board 12000 is in just It is rectangular, and include four column positions hole 12200 corresponding to stand column device 1400 in the quadrangle of partition board 12000.In partition board 12000 Centre part includes can be with the circumferential notch 12400 of the circumference fin 10420 of close receipt top box device 10000.Partition board 12000 Main function be the top box device 10000 that is positioned above of support and the second chamber plate being contained in top box device 10000 1220.Four sides of partition board 12000 are also respectively formed with the notch 12600 of rectangle, and notch 12600 can be used for accommodating pipeline and peace Fill the element of other such as valve, flow governor, sensors etc.In one embodiment, partition board 12000 may be used stainless Steel material makes.

Flattening correction device 1100 includes correcting plate 1140, top plate 1120 and screw 1520.It is corrected first by adjusting Nut above the quadrangle of plate 1140 gives the appropriate pressure in quadrangle of correcting plate 1140, can tentatively adjust second chamber plate 1220 planarization.Recycle existing level measurement device or observe the micro chamber of closed state, according to measurement result or Person is observed as a result, coordinate installation of multiple screws 1520 on top plate 1120, can accurately adjust the pressure on correcting plate 1220 Power is distributed, so that second chamber plate 1220 is in the state for more meeting technological requirement.Certainly, in some embodiments, It may also need to adjust the state that second chamber plate 1220 is in certain inclination angle, corresponding place is done to semiconductor crystal wafer to facilitate Reason, adjusting the mode of second chamber plate 1220 at this time can easily associate from foregoing description.

Flattening correction device 1100 can make the lower surface of second chamber plate 1220 be in more suitable stationary state, and Driving device 1300 can make the upper surface of first chamber plate 1260 decline or rise and cause under second chamber plate 1220 The micro chamber that surface and the upper surface of first chamber plate 1260 are formed is in opening or closed state.Certainly, in order to obtain compared with For strict micro chamber, the lower surface of second chamber plate 1220 and the upper surface of first chamber plate 1260 can have corresponding patch It closes or coupled structure, the fitting of second chamber plate 1220, top box device 1240, first chamber plate 1260 and lower box device 1280 Place can also use the elements such as the sealing O rings of rubber quality.While in order to enable chemicals or other fluids Enough inlet and outlet micro chambers, second chamber plate 1220 and first chamber plate 1260 should also have hollow microtubule and lead The inlet and outlet structure of chute etc.For example it is required that when semiconductor crystal wafer is inside micro chamber, semiconductor crystal wafer and micro- The inner wall of chamber is formed with the gap circulated for chemicals, the preset width in the gap usually 0.01mm and 10mm it Between.Such as above-mentioned part that these are not described in detail herein, the content being well known to the skilled person, herein no longer It is tired to state.

In a specific embodiment, it partly leads when being handled using above-mentioned semiconductor processing device 1000 in the utility model During body wafer, processing procedure can probably be divided into following several processes：Chamber panel replacement process, chemical treating process.

In chamber panel replacement process, can matched chamber panel be replaced according to semiconductor die size to be processed.It is first Driver is first generated into downward driving force and declines lower box device 1280 and first chamber plate 1260, then opens or pulls out Go out plug-in unit 1600, then original first chamber plate 1260 is slided to taking-up along the navigation groove of lower box device 1280.It will be suitable First chamber plate 1260 slide loading along the navigation groove of lower box device 1280, installation plug-in unit 1600 is so that first chamber plate 1260 are fixed in lower box device 1280.

In chemical treating process, micro chamber is closed first with driving device 1300, then passes through second chamber plate 1220 Chemicals or other fluids are introduced micro chamber to be carried out such as to internal wafer by interior hollow microtubule and entrance The processing of analysis, etching etc, then by the delivery or gravity of internal pressure, such as gas drive chemicals or its He discharges at fluid via the structure within the hollow microtubule or diversion trench in first chamber plate 1260 and outlet.It is special Not, due to second chamber plate 1220 and first chamber plate 1260 need to consider in design such as hollow microtubule or The structure of diversion trench etc, according to specific embodiment second chamber plate 1220 and first chamber plate 1260 may there are many deformation and Increasingly complex structure not fully such as herein for the description of second chamber plate 1220 and first chamber plate 1260, therefore has The difference closed herein should not be taken as restricting the factor of the scope of protection of the utility model.

In order to more preferably place above-mentioned semiconductor processing device 10, pipe controller 20, sampling device 60, go out sampling device 70th, apparatus modules such as fluid carrying module 30 and/or filter etc. additionally provide a kind of equipment support device in this application, It has the requirement that can functionally fully meet supporting rack and frame, is easily assembled to dismantle in structure, most of material is recyclable The features such as utilization.In a preferred embodiment, wafer processing device can also include above equipment support device 1001, Figure 18 A show the dimensional structure diagram of equipment support device 1001 in one embodiment in the utility model, figure 18B is that the plane of the equipment support device 1001 in Figure 18 A regards master map, and Figure 18 C are the equipment support device 1001 in Figure 18 A Plane left view, which includes four montants, 1101, two the first cross bars of top, 1201, two tops second 1301, two the first cross bars of bottom 1401 of cross bar and two the second cross bars of bottom 1501.Four 1101 vertical spacings of montant are placed It is and parallel to each other.Two the first cross bars 1201 of top are vertical and parallel to each other with montant 1101, the first cross bar 1201 of each top Both ends respectively with the top end face of two montants 1101 against and connect.Two the second cross bars 1301 of top and montant 1101 and The first cross bar of top 1201 is vertical and parallel to each other, and the both ends of the second cross bar 1301 of each top are horizontal with two tops first respectively The side of one end of bar 1201 against and connect.Two the first cross bars of bottom 1401 are vertical with montant 1101 and horizontal with top first Bar 1201 is parallel, the both ends of each the first cross bar of bottom 1401 respectively with the bottom face of two montants 1101 against and connect.Two A the second cross bar of bottom 1501 is parallel with montant 1101 and top the second cross bar 1301, each the second cross bar of bottom 1501 Both ends respectively with the side of one end of two the first cross bars of bottom 1401 against and connect.In this way, equipment support device 1001 is just Foring a cuboid framework (or for cuboid framework), four montants 1101 form the vertical edge of cuboid framework, and four A first cross bar 1201 and 1401 forms the first horizontal edge of cuboid framework, and four the second cross bars 1301 and 1501 form cuboid Second horizontal edge of frame.Top 1201, two montants 1101 and one of the first cross bar positioned at the same side of cuboid framework A the first cross bar of bottom 1401 forms a side of cuboid framework, positioned at a top of the same side of cuboid framework the Two montants 1101 of cross bar 1301, two and second cross bar of bottom 1501 form a side of cuboid framework, two tops The first cross bar of portion 1201 and two the second cross bars 1301 of top form the top surface of cuboid framework, two the first cross bars of bottom 1301 and two the second cross bars of bottom 1501 form the bottom surface of cuboid framework.

For cuboid framework, montant 1101 in the vertical direction can be to the first cross bar of top 1201 and top Two cross bars 1301 provide strong support so that heavier crystal column surface processing can be placed on the top surface of cuboid framework and is set Section components in standby.The section components in crystal column surface processing equipment can also be placed in cuboid framework.

Equipment support device 1001 further includes two parallel 1601, second support bars 1701 and two of first support bar A parallel third supporting rod 1801.Each first support bar 1601 be located between two the first cross bars of bottom 1401 and with two One end connection of the first cross bar of bottom 1401.The both ends of second support bar 1701 are connected to two first support bars 1601 On.Two third supporting rods 1801 are located at the inside of two the second cross bars 1301 of top respectively, each third supporting rod 1801 Both ends are connected on a side of two the first cross bars 1201 of top.

Cuboid is collectively formed in the upper side of first support bar 1601, second support bar 1701 and the first cross bar of bottom 1401 The inside bottom surface of frame can place crystal column surface processing device component in the inside bottom surface.Meanwhile first support bar 1601 Second support bar 1701 can also play whole equipment support device 1001 certain reinforcement effect.1801 He of third supporting rod The top surface of cuboid framework is collectively formed in the upper side of the second cross bar of top 1301, can be placed at crystal column surface on the top surface Manage the section components of equipment.The position of third supporting rod 1801 can be adjusted according to the size of put part of appliance thereon；Meanwhile Third supporting rod 1801 can also play whole equipment support device 1001 certain reinforcement effect.

Please emphasis erected refering to shown in Figure 18 B and Figure 18 C, each cross bar extends outwardly and formed beyond what is connect with the cross bar The epitaxy part of the lateral surface of bar, the one side setting of the epitaxy part towards its another corresponding cross bar of the epitaxy part of each cross bar There is a raceway groove for running through the cross bar, the raceway groove of two cross bars of epitaxy part forward surface pair is oppositely arranged.

Specifically, the first cross bar 1201 of each top extends outwardly and is formed to exceed and connects with first cross bar of top 1201 The epitaxy part 1211 of the lateral surface 1111 of the montant 1101 connect, each the first cross bar of bottom 1401 extend outwardly and formed beyond with The epitaxy part 1411 of the lateral surface 1111 of the montant 1101 of first cross bar of bottom 1401 connection, the second cross bar 1301 of each top Extend outwardly and formed beyond the epitaxy part 1311 of the lateral surface 1111 of montant 1101 being connect with second cross bar of top 1301, The second cross bar of each bottom 1501 extends outwardly and is formed beyond the outer of the montant 1101 being connect with second cross bar of bottom 1501 The epitaxy part 1511 of side 1111.The epitaxy part 1211 of first cross bar 1201 is horizontal towards its corresponding bottom first at the top of each The epitaxy part 1411 of bar 1401 is provided with a raceway groove 1221 for running through first cross bar of top 1201 on one side, likewise, often The one of the epitaxy part 1211 towards its corresponding the first cross bar of top 1201 of the epitaxy part 1411 of a the first cross bar of bottom 1401 Face is provided with a raceway groove 1421 for running through first cross bar of bottom 1401.The epitaxy part of the second cross bar 1301 of each top 1311 epitaxy part 1511 towards its corresponding the second cross bar of bottom 1501 is provided with one through the top second on one side The raceway groove 1321 of cross bar 1301, likewise, the epitaxy part 1511 of each the second cross bar of bottom 1501 towards its corresponding top The epitaxy part 1311 of second cross bar 1301 is provided with a raceway groove 1521 for running through second cross bar of bottom 1501 on one side.

Figure 19 is that the assembling of equipment support device 1001 in one further embodiment in the utility model is three-dimensional Structure diagram.Equipment support device shown in Figure 19 compared with the equipment support device shown in Figure 18 A, further include there are four Side plate 2101.With reference to reference to shown in figure 18B and Figure 18 C, each side plate 2101 is removably plugged in corresponding one Between the raceway groove of the epitaxy part of the epitaxy part of a top cross bar and a bottom bar, the top edge of each side plate 2101 is received It is dissolved in the raceway groove of the epitaxy part of top cross bar, the lower edge of each side plate 2101 is contained in the epitaxy part of bottom bar In raceway groove.

Specifically, there are two the epitaxy parts 1211 that side plate 2101 is plugged in corresponding the first cross bar of top 1201 respectively Between the epitaxy part 1411 of the first cross bar of bottom 1401, the top edge of two side plates 2101 is contained in the first horizontal stroke of top In the raceway groove 12211 of the epitaxy part 1211 of bar 1201, lower edge is contained in the epitaxy part 1411 of the first cross bar of bottom 140 In raceway groove 1421.There are two 1311 Hes of epitaxy part that side plate 2101 is plugged in corresponding the second cross bar of top 1301 respectively Between the epitaxy part 1511 of the second cross bar of bottom 1501, the top edge of two side plates 2101 is contained in the second cross bar of top In the raceway groove 1321 of 1301 epitaxy part 1311, lower edge is contained in the ditch of the epitaxy part 1511 of the second cross bar of bottom 1501 In road 1521.

Side plate 2101 can give the crystal column surface processing device component in equipment support device 1001 to provide centainly Semienclosed accommodation space.In this way, can both protect the crystal column surface processing device component in it, it is also possible to prevent in it Crystal column surface processing device component breaks down and influences external environment after (for example unexpected liquid leakage or sprinkling occur). In addition, side plate is but also the appearance of whole equipment support device is more beautiful.

The equipment support device can pass through multiple montants 1101, multiple first cross bars 1201, multiple second cross bars 1301 The first cuboid framework and the second cuboid frame below the first cuboid framework are formed with multiple side plates 2101 Frame and the third cuboid framework below the second cuboid framework, semiconductor processing device 10 are located at the first cuboid In frame, pipe controller 20 and/or go out sampling device 70 and be located in the second cuboid framework, wafer processing device further includes position In the fluid carrying module 30 in third cuboid framework.

In order to which side plate 2101 is preferably fixed, the equipment support device 1001 shown in Figure 19 has further included four A positioning column 2201 parallel with montant 1101.The top of each positioning column 2201 is located at adjacent 1201 He of the first cross bar of top Between the second cross bar of top 1301, the bottom end of each positioning column 2201 is located at adjacent the first cross bar of bottom 1401 and bottom second Between cross bar 1401.The side plate that two adjacent positioning columns 2201 can will be plugged between top cross bar and bottom bar 2101 are positioned between the two.

It is activity orientation column 2201A there are two in positioning column 2201, there are two be stationary positioned column in positioning column 2201 2201B.Stationary positioned column 2201B is fixedly connected with adjacent cross bar.Activity orientation column 2201A connects with adjacent cross bar activity It connects.When an activity orientation column 2201A is moved to open position, two sides adjacent with activity orientation column 2201A are inserted Plate 2101 can be inserted into corresponding position at activity orientation column 2201A positions, be moved in activity orientation column 2201A During closed position, the side plate 2101 being already inserted into then is positioned on its position.It is needing to remove side plate 2101 When, equally activity orientation column 2101 can be moved to open position, so as to be removed at activity orientation column 2201A pair The side plate 2101 answered.If two activity orientation column 2201A are arranged at intervals, 4 side plates 2101 can be realized in this way Random installation and dismounting.If two activity orientation column 2201A are disposed adjacent, wherein 3 side plates can be realized in this way 2101 random installation and dismounting.If only there are one activity orientation column 2201A, there are 3 stationary positioned column 2201B, at this moment only There are the 2 side plates 2101 adjacent with activity orientation column 2201A that can arbitrarily install and dismantle.Can as needed depending on.

In one embodiment, activity orientation column 2201A is rotatably articulated in the first cross bar by pivot (not shown) 1201 and 1401 or second on cross bar 1301 and 1401, and activity orientation column 2201A can be along open position be pivoted to, later It is rotated further by closed position.When on activity orientation column 2201A is in the closed position, activity orientation column 2201A and adjacent horizontal stroke Bar links together, such as by magnet adsorption together.

Above-mentioned each embodiment in this specification is described by the way of progressive, identical between each embodiment Similar portion is cross-referenced, and what each embodiment stressed is and other embodiment difference.Above only For several embodiments of the utility model, although the embodiment disclosed by the utility model is as above, content is intended merely to The embodiment for being easy to understand the utility model and using is not intended to limit the utility model.Belonging to any the utility model Those skilled in the art, can be in embodiment party under the premise of the spirit and scope disclosed by the utility model are not departed from Make any modification and variation, but the scope of patent protection of the utility model in the formal and details of formula, it still must be with appended power Subject to the range that sharp claim is defined.

Claims (13)

1. a kind of wafer processing device, which is characterized in that it includes：

Semiconductor processing device, the semiconductor processing device include first chamber portion and can opened relative to first chamber portion The second chamber portion moved between position and closed position is formed with micro chamber between first chamber portion and second chamber portion, the One chamber portion has the first through hole for the first chamber portion being passed through to be connected with the micro chamber from outside and is somebody's turn to do from external pass through Second through-hole of the first chamber portion to be connected with micro chamber；

Sampling device, the sampling device include the fluid flow rate control unit that can be connected with the first through hole and with it is described The treatment fluid selecting unit that fluid flow rate control unit is connected, the treatment fluid selecting unit can be in a variety of of offer Type of fluid in fluid needed for selection this time, the fluid flow rate control unit are used to control the treatment fluid selecting unit The flow velocity of the fluid conveyed to the semiconductor processing device；

Go out sampling device, it is described go out sampling device can be connected with the second through-hole of the semiconductor processing device, be used for collected from The reaction solution of second through-hole discharge of the semiconductor processing device.

2. wafer processing device according to claim 1, which is characterized in that the sampling device further includes so that the place Reason fluid selecting unit quantitatively measures the treatment fluid dosing unit of required fluid.

3. wafer processing device according to claim 1, which is characterized in that the wafer processing device further includes pipeline control Device processed, the pipe controller respectively with the sampling device, it is described go out sampling device and the semiconductor processing device The first through hole, second through-hole be connected, the pipe controller can control it is described go out sampling device, described half The first through hole of conductor processing unit, the semiconductor processing device the second through-hole and it is described go out sampling device between phase intercommunication It is disconnected.

4. wafer processing device according to claim 1, which is characterized in that the wafer processing device further include with it is described Go out the detecting instrument that sampling device is connected, with to it is described go out sampling device in the reaction solution collected carry out impurity content detection.

5. wafer processing device according to claim 1, which is characterized in that the second chamber portion and the first chamber It portion can be under the driving of a driving device in the open position for loading and/or removing the semiconductor crystal wafer and for handling this It is relatively moved between the closed position of semiconductor crystal wafer, when semiconductor processing device is in the closed position, the semiconductor die Circle can be installed in micro chamber.

6. wafer processing device according to claim 1, which is characterized in that the wafer processing device further includes：Fluid Carrier module, the fluid carrying module are used to carry various unused fluids and/or process the semiconductor crystal wafer Using fluid, the treatment fluid selecting unit selects the fluid carried in the fluid carrying module.

7. wafer processing device according to claim 6, which is characterized in that is carried in the fluid carrying module does not make Fluid is delivered to the micro chamber by the sampling device, and then in the micro chamber to the semiconductor crystal wafer in it It is handled, used fluid goes out via described in the second through-hole inflow of the semiconductor processing device in sampling device later Or it flows back in the waste liquid recovery apparatus of the fluid carrying module.

8. wafer processing device according to claim 6, which is characterized in that the wafer processing device further includes：Ventilation Module, the ventilation module be used for the semiconductor processing device, the sampling device, the fluid carrying module and/or It is described go out sampling device be aerated ventilation.

9. wafer processing device according to claim 3, which is characterized in that the wafer processing device further includes electric-controlled Molding block, the electric control module are used to control the semiconductor processing device, the sampling device and/or the pipeline control Device processed.

10. wafer processing device according to claim 1, which is characterized in that the first chamber portion have from this first The groove track that the surface indentation of chamber portion towards the micro chamber is formed, the first through hole connect first of the groove track Place is put, second through-hole connects the second place of the groove track, and first through hole includes directly communicating with the groove track The first buffering oral area and with the first through hole portion that directly communicates of first buffering oral area, the second through-hole includes and the groove track The the second buffering oral area directly communicated and the second through-hole section directly communicated with the second buffering oral area.

11. wafer processing device according to claim 1, which is characterized in that the wafer processing device further includes equipment Support device, the equipment support device are inserted including multiple montants, multiple first cross bars, multiple second cross bars and multiple sides Plate, the montant, the first cross bar and the second cross bar form a cuboid framework, and the montant forms the cuboid framework Vertical edge, first cross bar form the first horizontal edge of the cuboid framework, and second cross bar forms the cuboid frame Second horizontal edge of frame,

Each cross bar extends outwardly and is formed outside the epitaxy part of the lateral surface of montant being connect with the cross bar, each cross bar That prolongs the epitaxy part towards its another corresponding cross bar in portion is provided with a raceway groove for running through the cross bar, the side on one side Plate is plugged between the raceway groove of the epitaxy part of two opposite the first cross bars and/or two the second cross bars.

12. wafer processing device according to claim 11, which is characterized in that first cross bar includes two tops the One cross bar and two the first cross bars of bottom, second cross bar include two the second cross bars of top and two the second cross bars of bottom, The montant is four, the both ends of the first cross bar of each top respectively with the top end face of two montants against and connect, Mei Geding The both ends of the second cross bar of portion respectively with two top the first cross bar one end side against and connect, each the first cross bar of bottom Both ends respectively with the bottom face of two montants against and connect, the both ends of each the second cross bar of bottom respectively with two bottoms The side of one end of one cross bar against and connect.

13. wafer processing device according to claim 11, which is characterized in that the equipment support device passes through multiple perpendicular Bar, multiple first cross bars, multiple second cross bars and multiple side plates form the first cuboid framework and positioned at the described first length The second cuboid framework below cube frame and the third cuboid framework below the second cuboid framework, it is described Semiconductor processing device is located in first cuboid framework, the sampling device and/or goes out sampling device positioned at described second In cuboid framework, the wafer processing device further includes the fluid carrying module in the third cuboid framework.