CN207490892U - A kind of semiconductor temperature-control switching circuit - Google Patents
A kind of semiconductor temperature-control switching circuit Download PDFInfo
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- CN207490892U CN207490892U CN201721239137.8U CN201721239137U CN207490892U CN 207490892 U CN207490892 U CN 207490892U CN 201721239137 U CN201721239137 U CN 201721239137U CN 207490892 U CN207490892 U CN 207490892U
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Abstract
The utility model discloses a kind of semiconductor temperature-control switching circuit, including voltage control module and semiconductor switch；The semiconductor switch includes coordination electrode, first electrode and second electrode；The voltage control module includes fixed value resistance and variable resistance, and the first end of the fixed value resistance is electrically connected with the first electrode of the semiconductor switch, and is grounded, and the second end of the fixed value resistance is electrically connected with the coordination electrode of the semiconductor switch；The first end of the variable resistance and the coordination electrode of the semiconductor switch, and the second end electrical connection of the fixed value resistance, the second end of the variable resistance is electrically connected with regulated power supply, and the voltage control module is used to apply the first predeterminated voltage between the coordination electrode and first electrode of the semiconductor switch.This semiconductor temperature-control switching circuit utilizes the temperature characterisitic of semiconductor, low in energy consumption, is swift in response sensitive, automatic restorative strong, long lifespan and can set temperature controlling value.
Description
Technical field
The utility model embodiment is related to security against fire and automation field more particularly to a kind of semiconductor temperature-control switch
Circuit.
Background technology
Temp control switch is commonly applied to make temperature control in the equipment such as refrigerator, air-conditioning or security against fire alarm or overheat is protected
Protecting assembly uses.Temp control switch currently on the market mainly has Resistance Temperature control switch and based on thermal expansion and contraction principle
Temp control switch.
Resistance Temperature control switch is according to made of Wheatstone bridge principle, when the impedance of thermistor is with warm around
When rising or falling and changing of degree, the balance of Wheatstone bridge receives destruction, and bridge output has electric current output.Therefore, it is electric
In resistance temperature switch, current output value is gradual change, and the reaction sensitivity of this switch is relatively low.Temperature based on thermal expansion and contraction principle
Degree switch, complicated in mechanical structure, automatic reaction speed are slow.
Utility model content
The utility model designs a kind of semiconductor temperature-control switch electricity using the voltage-temperature characteristic of thyristor
Road, circuit is simple, is swift in response sensitive, automatic restorative strong.
The utility model embodiment proposes a kind of semiconductor temperature-control switching circuit, is opened including voltage control module and semiconductor
It closes；
The semiconductor switch includes coordination electrode, first electrode and second electrode；
The voltage control module includes fixed value resistance and variable resistance, and the first end of the fixed value resistance is partly led with described
The first electrode electrical connection of body switch, and be grounded, the second end of the fixed value resistance and the coordination electrode of the semiconductor switch
Electrical connection；The second of the coordination electrode and the fixed value resistance of the first end of the variable resistance and the semiconductor switch
End electrical connection, the second end of the variable resistance are electrically connected with regulated power supply, and the voltage control module is used to partly lead to described
Apply the first predeterminated voltage between the coordination electrode and first electrode of body switch.
Further, the semiconductor temperature-control switching circuit further includes temperature control modules；
The temperature control modules, the correspondence being stored between multiple predeterminated voltages and threshold temperature；
The control signal output of the temperature control modules is electrically connected with the voltage control module, for receiving user
The first threshold temperature of input.
Further, the coordination electrode electricity of the voltage signal inputs of the temperature control modules and the semiconductor switch
The control output end of connection and the temperature control modules is electrically connected with the resistance variations control terminal of the variable resistance.
Further, the temperature control modules further include temperature display submodule, for showing input by user first
Threshold temperature.
Further, it is in series with load in the second electrode of the semiconductor switch.
Further, the load is alarm.
Further, the semiconductor switch is triode, and the coordination electrode is base stage, and the first electrode is transmitting
Pole, the second electrode are collector.
Alternatively, the semiconductor switch is metal-oxide semiconductor fieldeffect transistor, the coordination electrode is grid
Pole, the first electrode are source electrode, and the second electrode is drain electrode.
The technical solution that the utility model embodiment provides using semiconductor element as temp control switch element, solves
Ordinary temperature control switching power loss is big, and complicated in mechanical structure, reaction speed is slow, and restoring force is low and the problem of short life；It realizes
Low-power consumption, it is simple in structure, it is swift in response sensitive, restoring force is strong, the semiconductor temperature of long lifespan and automatically setting temperature controlling value
Control switching circuit.
Description of the drawings
Fig. 1 is a kind of structure chart for semiconductor temperature-control switching circuit that the utility model embodiment one provides.
Fig. 2 is a kind of electricity of the semiconductor switch for semiconductor temperature-control switching circuit that the utility model embodiment one provides
Pressure-temperature characteristics figure.
Fig. 3 is the structure chart for another semiconductor temperature-control switching circuit that the utility model embodiment two provides.
Fig. 4 is a kind of circuit element diagram for semiconductor temperature-control switching circuit that the utility model embodiment three provides.
Fig. 5 is the circuit element diagram for another semiconductor temperature-control switching circuit that the utility model embodiment four provides.
Specific embodiment
The utility model is described in further detail with reference to the accompanying drawings and examples.It is understood that herein
Described specific embodiment is used only for explaining the utility model rather than the restriction to the utility model.It further needs exist for
It is bright, part relevant with the utility model rather than entire infrastructure are illustrated only for ease of description, in attached drawing.
Embodiment one
Fig. 1 is a kind of structure chart for semiconductor temperature-control switching circuit that the utility model embodiment one provides.Such as Fig. 1 institutes
Show, this semiconductor temperature-control switching circuit includes voltage control module 110 and semiconductor switch 120；
Semiconductor switch 120 includes coordination electrode Ctrl, first electrode E1 and second electrode E2；
Voltage control module 110 includes fixed value resistance R0 and variable resistance RX, and the first end R01 of fixed value resistance R0 is with partly leading
The first electrode E1 electrical connections of body switch 120, and be grounded, the second end R02 of fixed value resistance R0 and the control of semiconductor switch 120
Electrode Ctrl is electrically connected；The first end RX1 of the variable resistance RX and coordination electrode Ctrl of semiconductor switch 120 and definite value electricity
The second end R02 electrical connections of R0 are hindered, the second end RX2 of variable resistance RX is electrically connected with regulated power supply Vcc, voltage control module
110 are used to apply the first predeterminated voltage between the coordination electrode Ctrl of semiconductor switch 120 and first electrode E1.
Wherein, the resistance value of fixed value resistance R0 and variable resistance RX are M Ω grade, can reach A grades of quiescent currents of μ, realize μ A
The quiescent dissipation of grade.
Wherein, semiconductor switch 120 voltage-temperature characteristic variations curve as shown in Fig. 2, horizontal axis represent environment temperature T,
The longitudinal axis represents voltage value V；Camber line L0 represents the on state threshold voltage V of semiconductor switch 120 with the variation tendency of temperature T, dotted line
The one-to-one relationship of the on state threshold voltage V and threshold temperature T of semiconductor switch 120 at a temperature of expression varying environment.Fig. 2 tables
The on state threshold voltage V of bright semiconductor switch 120 declines with the rising of temperature T, meanwhile, preset voltage value is opened higher than semiconductor
When closing 120 on state threshold voltage V, first electrode E1 and second electrode the E2 conducting of semiconductor switch 120.
It should be noted that the camber line L0 in Fig. 2 represents that the conduction threshold V of semiconductor switch 120 determines with what temperature T changed
Sexual intercourse, only represents variation tendency herein, is not related to specific numberical range.Wherein, semiconductor switch 120 can be positive-negative-positive
Triode, NPN type triode, positive-negative-positive metal-oxide semiconductor fieldeffect transistor or NPN type metal-oxide-partly lead
Body field-effect transistor.
Specifically, assuming that V0 is the first predeterminated voltage, then V0 corresponds to unique first threshold temperature T0；Work as semiconductor switch
When environment temperature T2 residing for 120 is less than first threshold temperature T0, the first predeterminated voltage V0 is less than the conducting of semiconductor switch 120
Threshold voltage V2, semiconductor switch 120 can not be connected；When the environment temperature residing for semiconductor switch 120 is increased to T1, and T1 high
When first threshold temperature T0, the first predeterminated voltage V0 is higher than the on state threshold voltage V1 of semiconductor switch 120, at this point, partly leading
120 conducting of body switch；When temperature falls back to T2, and T2 is less than first threshold temperature T0, the first predeterminated voltage V0 is less than again partly to be led
The on state threshold voltage V2 of body switch 120, at this point, semiconductor switch can not be connected again.So cycle, is opened using semiconductor temperature-control
Realize automatically controlling for temperature in powered-down road.
The technical solution that the utility model embodiment provides, using the temperature characterisitic of above-mentioned semiconductor switch to circuit turn-on
Whether state controlled, with traditional Resistance Temperature control switch and the mechanical temperature control based on thermal expansion and contraction principle
System switch is compared, simple in structure；Meanwhile the on off state of semiconductor switch varies with temperature mutation, so the present invention is real
The semiconductor temperature-control switching circuit for applying example offer is quick on the draw, and restoring force is strong；It is and cold without the variation or heat expansion of impedance repeatedly
The variation of contracting, state conversion frequency whether semiconductor switch 120 is connected is more, i.e. the service life of semiconductor temperature-control switching circuit
It is long.
Embodiment two
Fig. 3 is the structure chart for another semiconductor temperature-control switching circuit that the utility model embodiment two provides.Above-mentioned
On the basis of embodiment one, this semiconductor temperature-control switching circuit further includes temperature control modules 130；
Temperature control modules 130, the correspondence being stored between multiple predeterminated voltages and threshold temperature；
The control signal output Out of temperature control modules 130 is electrically connected with voltage control module 110, is used for receiving
In the first threshold temperature of input.
Further, the coordination electrode of the voltage signal inputs In of temperature control modules 130 and semiconductor switch 120
Ctrl is electrically connected, and the resistance variations control terminal RXC of the control output end Out and variable resistance RX of temperature control modules 130 are electrically connected
It connects.
Wherein, after temperature control modules 130 receive first threshold temperature T0 input by user, by controlling variable resistance RX
Resistance variations control terminal RXC adjust the resistance value of variable resistance RX, and then adjust point of variable resistance RX and fixed value resistance R0
Pressure situation, it is, voltage control module 110 and the current potential of the coordination electrode Ctrl electric connecting terminals of semiconductor switch 120 are adjusted,
Also that is, adjusting the electricity that voltage control module 110 is applied between the coordination electrode Ctrl of semiconductor switch 120 and first electrode E1
Pressure.Meanwhile the voltage signal inputs In receiving voltages control module 110 of temperature control modules 130 and semiconductor switch 120
The potential value of coordination electrode electric connecting terminal, and compared with the first predeterminated voltage V0 corresponding with first threshold temperature T0, further adjust
The resistance value of variable resistance RX is saved, that is, carries out feedback regulation so that final voltage control module 110 is applied to semiconductor switch 120
Coordination electrode Ctrl and first electrode E1 between voltage be the first predeterminated voltage V0.
The process of above-mentioned feedback regulation so that be applied to voltage between semiconductor switch coordination electrode and first electrode more
Accurately, and then the control accuracy higher of temperature switch control circuit, i.e. temperature control are more accurate.
Further, temperature control modules 130 further include temperature display submodule 1301 (in temperature control modules 130
Other circuits are not shown), for showing first threshold temperature input by user.
Temperature control modules in the present embodiment can realize the setting and display of temperature, and then, user can independently set half
The control temperature of conductor temperature switch circuit.
Embodiment three
Fig. 4 is a kind of circuit element diagram for semiconductor temperature-control switching circuit that the utility model embodiment three provides.Such as Fig. 4
Shown, on the basis of above-described embodiment, this temperature switch control circuit further includes load 140, and the second of semiconductor switch 120
Load 140 is in series on electrode E2.
Further, load 140 is alarm.
Wherein, this alarm can be used for sending out prompting or warning when device temperature is higher than preset threshold temperature, carry in time
The user that wakes up handles temperature anomaly situation, so as to ensure that equipment works in the normal temperature range.For example, semiconductor temperature-control
Switching circuit can be applied in film deposition equipment, be reminded for temperature anomaly.Specifically, film deposition equipment is working normally
In the process, temperature maintains 25-30 DEG C, then user can set operation irregularity and remind temperature as 33 DEG C.At this point, if thin film deposition is set
Standby to work normally, then the conducting voltage of semiconductor switch 120 is higher than predeterminated voltage, i.e. semiconductor switch 120 can not be connected, and alarms
Device does not work；When film deposition equipment operation irregularity, when temperature is more than 33 DEG C, then the electric conduction of semiconductor switch 120 forces down
In predeterminated voltage, i.e. semiconductor switch 120 is connected, i.e., alarm sends out prompting or warning, user equipment is reminded to occur abnormal, made
User can in time discovering device it is abnormal.For another example semiconductor temperature-control switching circuit applies also for security against fire warning device
In, user can set the conduction threshold temperature of semiconductor switch 120 as 40 DEG C.Under normal circumstances, environment temperature is less than 40 DEG C, partly
The conducting voltage of conductor switch 120 is higher than predeterminated voltage, i.e. semiconductor switch 120 can not be connected, and alarm does not work；Work as periphery
When fire behavior occurs in environment, environment temperature raising, when the temperature that semiconductor switch 120 detects is higher than 40 DEG C, electric conduction forces down
In predeterminated voltage, i.e., semiconductor switch 120 is connected, and then alarm work, i.e., alarm sends out light flash and is simultaneously emitted by
Ear-piercing buzzer reminds user to have fire behavior with this so that user can take measures in time, ensure the person and property peace
Entirely.
Further, semiconductor switch 120 be metal-oxide semiconductor fieldeffect transistor MOS, coordination electrode
Ctrl is grid, and first electrode E1 is source electrode, and second electrode E2 is drain electrode.
Illustratively, referring to Fig. 4.Semiconductor is made using NPN type metal-oxide semiconductor fieldeffect transistor MOS to open
120 are closed, grid electrode Ctrl in order to control is electrically connected with voltage control module 110；Source electrode is first electrode E1, with definite value electricity
The first end R01 electrical connections of R0 are hindered, and are grounded；It drains as second electrode E2, is electrically connected with load 140.
Optionally, can also semiconductor switch be done using positive-negative-positive metal-oxide semiconductor fieldeffect transistor MOS
120, grid electrode Ctrl in order to control are electrically connected with voltage control module 110；Source electrode is first electrode E1, with fixed value resistance
The first end R01 electrical connections of R0, and meet regulated power supply Vcc；It drains as second electrode E2, be electrically connected with load 140, load 140
Ground connection.It is not shown in such connection mode figure.
With reference to the present embodiment circuit shown in Fig. 4, using semiconductor switch 120 be NPN type metal-oxide-semiconductor as example, illustrate this reality
The course of work of the temp control switch of example offer is provided.Temperature control modules 130 receive first threshold temperature T0 input by user,
Corresponding first predeterminated voltage V0 is obtained according to first threshold temperature T0, and pass through control voltage control module 120 can power transformation
The resistance value for hindering RX is adjusted, and applies the first predeterminated voltage V0 between the grid and source electrode of NPN type metal-oxide-semiconductor.At this point, NPN type metal-oxide-semiconductor
On state threshold voltage change with the variation of its local environment temperature, when the temperature of NPN type metal-oxide-semiconductor is relatively low, such as in T2 temperature
When spending, on state threshold voltage V2 is higher than the first predeterminated voltage V0, and metal-oxide-semiconductor can not be connected, and alarm 140 does not work；Work as NPN type
The temperature raising of metal-oxide-semiconductor, such as in T1 temperature, on state threshold voltage V1 is less than the first predeterminated voltage V0, metal-oxide-semiconductor is connected,
Alarm automatic switching on is started to work；When temperature falls back to low temperature T2, on state threshold voltage V2 is higher than the first predeterminated voltage again
V0, metal-oxide-semiconductor can not be connected again, and alarm does not work.So cycle, realizes the temperature automatically controlled adjusting of alarm.
Technical solution provided in this embodiment, by using the voltage-temperature characteristic design semiconductor temperature-control switch of metal-oxide-semiconductor
Circuit makes semiconductor temperature-control switching circuit low in energy consumption, is swift in response sensitive, automatic restorative strong, long lifespan and can set temperature
Controlling value.
Example IV
Fig. 5 is the circuit element diagram for another semiconductor temperature-control switching circuit that the utility model embodiment four provides.Such as
Shown in Fig. 5, on the basis of above-described embodiment, semiconductor switch 120 can also be triode Q, at this point, coordination electrode Ctrl is
Base stage, first electrode E1 are emitter, and second electrode E2 is collector.
Illustratively, referring to Fig. 5.Semiconductor switch 120 is done using NPN type triode, base stage electrode Ctrl in order to control,
It is electrically connected with voltage control module 110；Emit extremely first electrode E1, be electrically connected, and connect with the first end R01 of fixed value resistance R0
Ground；Current collection extremely second electrode E2 is electrically connected with load 140.
Optionally, semiconductor switch 120 can also be done using PNP type triode, base stage electrode Ctrl in order to control, with electricity
Pressure control module 110 is electrically connected；Emit extremely first electrode E1, be electrically connected, and connect voltage stabilizing with the first end R01 of fixed value resistance R0
Power Vcc；Current collection extremely second electrode E2 is electrically connected with load 140,140 ground connection of load.It is not shown in such connection mode figure
Go out.
The operation principle of this circuit is the same as embodiment three.Unlike unique, since the type of semiconductor switch 120 is different,
Numerical value correspondence between the predeterminated voltage and threshold temperature of 130 memory storage of temperature control modules is different.
Technical solution provided in this embodiment utilizes the voltage-temperature characteristic design semiconductor temperature-control switch electricity of triode
Road, it is low in energy consumption, it is swift in response sensitive, automatic restorative strong, long lifespan and can set temperature controlling value.
Note that it above are only the preferred embodiment of the utility model and institute's application technology principle.Those skilled in the art's meeting
Understand, the utility model is not limited to specific embodiment described here, can carry out for a person skilled in the art various bright
Aobvious variation is readjusted and is substituted without departing from the scope of protection of the utility model.Therefore, although passing through above example
The utility model is described in further detail, but the utility model is not limited only to above example, is not departing from
In the case that the utility model is conceived, other more equivalent embodiments can also be included, and the scope of the utility model is by appended
Right determine.
Claims (8)
1. a kind of semiconductor temperature-control switching circuit, which is characterized in that including voltage control module and semiconductor switch；
The semiconductor switch includes coordination electrode, first electrode and second electrode；
The voltage control module includes fixed value resistance and variable resistance, and the first end of the fixed value resistance is opened with the semiconductor
The first electrode electrical connection of pass, and be grounded, the second end of the fixed value resistance and the coordination electrode of the semiconductor switch are electrically connected
It connects；The first end of the variable resistance and the coordination electrode of the semiconductor switch and the second end electricity of the fixed value resistance
Connection, the second end of the variable resistance are electrically connected with regulated power supply, and the voltage control module is used to open to the semiconductor
Apply the first predeterminated voltage between the coordination electrode and first electrode of pass.
2. semiconductor temperature-control switching circuit according to claim 1, which is characterized in that further include temperature control modules；
The temperature control modules, the correspondence being stored between multiple predeterminated voltages and threshold temperature；
The control signal output of the temperature control modules is electrically connected with the voltage control module, for receiving user's input
First threshold temperature.
3. semiconductor temperature-control switching circuit according to claim 2, which is characterized in that the voltage of the temperature control modules
Signal input part be electrically connected with the coordination electrode of the semiconductor switch and the control output end of the temperature control modules with
The resistance variations control terminal electrical connection of the variable resistance.
4. semiconductor temperature-control switching circuit according to claim 2, which is characterized in that the temperature control modules further include
Temperature display submodule, for showing first threshold temperature input by user.
5. semiconductor temperature-control switching circuit according to claim 1, which is characterized in that the second electricity of the semiconductor switch
Load is in series on extremely.
6. semiconductor temperature-control switching circuit according to claim 5, which is characterized in that the load is alarm.
7. semiconductor temperature-control switching circuit according to claim 1, which is characterized in that the semiconductor switch is three poles
Pipe, the coordination electrode are base stage, and the first electrode is emitter, and the second electrode is collector.
8. semiconductor temperature-control switching circuit according to claim 1, which is characterized in that the semiconductor switch for metal-
Oxide-Semiconductor Field effect transistor, the coordination electrode be grid, the first electrode be source electrode, the second electrode
For drain electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721239137.8U CN207490892U (en) | 2017-09-25 | 2017-09-25 | A kind of semiconductor temperature-control switching circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721239137.8U CN207490892U (en) | 2017-09-25 | 2017-09-25 | A kind of semiconductor temperature-control switching circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207490892U true CN207490892U (en) | 2018-06-12 |
Family
ID=62482564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721239137.8U Active CN207490892U (en) | 2017-09-25 | 2017-09-25 | A kind of semiconductor temperature-control switching circuit |
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| Country | Link |
|---|---|
| CN (1) | CN207490892U (en) |
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2017
- 2017-09-25 CN CN201721239137.8U patent/CN207490892U/en active Active
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