CN207457539U - A kind of silicon photon spot-size converter of refractive index gradient variation - Google Patents
A kind of silicon photon spot-size converter of refractive index gradient variation Download PDFInfo
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- CN207457539U CN207457539U CN201720828381.1U CN201720828381U CN207457539U CN 207457539 U CN207457539 U CN 207457539U CN 201720828381 U CN201720828381 U CN 201720828381U CN 207457539 U CN207457539 U CN 207457539U
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 150
- 239000010703 silicon Substances 0.000 title claims abstract description 150
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 148
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 81
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 81
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 81
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 81
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 81
- 238000005253 cladding Methods 0.000 claims abstract description 67
- 230000005540 biological transmission Effects 0.000 claims abstract description 66
- 229910020286 SiOxNy Inorganic materials 0.000 claims abstract description 65
- 238000003475 lamination Methods 0.000 claims abstract description 61
- 238000010276 construction Methods 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000002648 laminated material Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 21
- 239000013307 optical fiber Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000008054 signal transmission Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 105
- 238000000034 method Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
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- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
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- 238000010923 batch production Methods 0.000 description 1
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Abstract
The utility model is related to a kind of silicon photon spot-size converters of refractive index gradient variation, belong to semiconductor light signal transmission technology field.SOI wafer substrate surface is equipped with SiO in the converter2Support construction, SiO2Support construction upper surface is connected with silicon photon tapered transmission line lower surface, and silicon photon tapered transmission line is in same plane with silicon photon slab waveguide, and positioned at SiO2Above support construction, SiO2Support construction, silicon photon tapered transmission line, silicon photon slab waveguide are equipped with the gradient lamination SiO for surrounding the closing of these three structuresxNyInner cladding, gradient lamination SiOxNyInner cladding be using SOI wafer substrate as bottom from bottom to up refractive index progressively gradient reduce the laminated material bed of material, gradient lamination SiOxNyInner cladding is surrounded by SiO2Surrounding layer.The silicon photon spot-size converter of refractive index gradient variation in the utility model solves the requirement for being difficult to meet application in terms of optical property and reliability of existing silicon photon optical fiber spot-size converter, the optical property and high reliability that can have been obtained simultaneously.
Description
Technical field
The utility model is related to a kind of silicon photon spot-size converters of refractive index gradient variation, belong to semiconductor light signal biography
Transferring technology field.
Background technology
Silicon photon integrated optoelectronic device is the research hotspot of optical communication field, being capable of single-chip integration High speed active photoelectron device
Part and Passive Optical Components.Its technique and cmos device technique are completely compatible, can realize and be integrated with existing integrated circuit；Together
When there is relatively high Refractive Index of Material due to silicon materials, device size can reach nanometer scale, have extremely low cost
With the characteristic of batch production.At present, silicon photonic device solved high-speed modulator, high speed detector, high-speed optical switch and
The key issue of most of Passive Optical Components.But also there are key issue in terms of the coupling of silicon photonic waveguide and standard fiber,
Constrain the extensive use of silicon photon integrated optoelectronic device.Be presently used for silicon photonic waveguide coupled with standard fiber it is most effective
Spot-size converter includes grating spot-size converter and hanging bridge structure spot-size converter, but both has respective locality, limits
The application of silicon photonic integrated device.Grating spot-size converter is the spot-size converter based on Bragg optical grating constructions, makes work
Skill is simple, has relatively low coupling loss, while the coupling tolerance having had with standard fiber；But the spot-size converter has bright
Aobvious is polarization correlated, it is difficult to while for the optical signal of different polarization states, while its narrower bandwidth, general 1dB bandwidth only have
20~30nm.Hanging bridge structure spot-size converter is using 3D SiO2Tapered transmission line is come vertically and horizontally to the big mould spot of optical fiber
Size is effectively compressed so as to fulfill the silicon photonic waveguide efficient coupling with nano-scale, which has optical well
Energy, such as low optical coupling loss, polarization insensitive and big light belt are wide.But in design and fabrication hanging bridge structure spot-size converter
When, it is necessary first to it designs, make SiO2Tapered transmission line, this requires less than SiO2The clad material of refractive index.Due to being based on
In the material that SOI wafer makes, it can not find less than SiO2The solid cladding material of refractive index, can only use air as SiO2
The covering of tapered transmission line is to reach effective transmission of optical signal.Therefore, although hanging bridge structure mould based on air as surrounding layer
Spot-size converter has good optical property, but hanging bridge structure spot-size converter can only depend on thin SiO2Branch gripping arm is entire to support
Spot-size converter structure, mechanical property is bad, is easily broken off in actual manufacturing process, and is difficult to subsequent add
Work and encapsulation, which has limited effective applications of the device.
It is to be higher than cladding index based on core refractive rate that optical signal can stablize transmission in waveguiding structure.Optical signal has
There is the characteristic that high-index material is gradually coupled into from low-index material.In view of current silicon photon-Optical fiber speckle converter
The defects of, we have proposed the spot-size converter structures of refractive index gradient variation.
The content of the invention
For the above-mentioned prior art there are the problem of and deficiency, the utility model a kind of silicon of refractive index gradient variation is provided
Photon spot-size converter.The silicon photon spot-size converter of refractive index gradient variation in the utility model solves existing silicon light
The requirement for being difficult to meet application in terms of optical property and reliability of son-Optical fiber speckle converter, can obtain simultaneously
Optical property and high reliability, the utility model are achieved through the following technical solutions.
A kind of silicon photon spot-size converter of refractive index gradient variation, including SiO2Surrounding layer 1, SiO2Support construction 2, silicon
Photon tapered transmission line 3, silicon photon slab waveguide 4, SOI wafer substrate 5 and gradient lamination SiOxNyInner cladding 6, SOI wafer substrate 5
Surface is equipped with SiO2Support construction 2, SiO22 upper surface of support construction is connected with 3 lower surface of silicon photon tapered transmission line, silicon photon cone
Shape waveguide 3 is in same plane with silicon photon slab waveguide 4, and positioned at SiO22 top of support construction, SiO2Support construction 2, silicon
Photon tapered transmission line 3, silicon photon slab waveguide 4 are equipped with the gradient lamination SiO for surrounding the closing of these three structuresxNyInner cladding
6, gradient lamination SiOxNyInner cladding 6 be with SOI wafer substrate 5 be bottom from bottom to up refractive index progressively gradient reduce laminated material
The bed of material, gradient lamination SiOxNyInner cladding 6 is surrounded by SiO2Surrounding layer 1, wherein gradient lamination SiOxNyX, y points in inner cladding
It Wei not oxygen, the atomic molar number of nitrogen and 2x+3y=4,0≤x≤2,0≤y≤4/3 in material.
The SiO2Surrounding layer 1 is located on SOI wafer substrate 5, contains 5 container portion oxygen buried layer of SOI wafer substrate.
The SiO2Support construction 2 for 5 chip oxygen buried layer of SOI wafer substrate part or with 5 chip of SOI wafer substrate
Oxygen buried layer is connected.
The silicon photon tapered transmission line 3 is individual layer or lamination tapered transmission line structure, and 3 tip of silicon photon tapered transmission line is with inputting
5~100 microns of end face spacing, 3 end cross section of silicon photon tapered transmission line are identical with 4 cross sections of silicon photon slab waveguide.
The silicon photon tapered transmission line 3 and silicon photon slab waveguide 4 are located at SiO2Support construction 2 and gradient lamination SiOxNy
Between inner cladding 6 or embedded in SiO2Inside support construction 2.
It is described with SOI wafer substrate 5 be bottom gradient lamination SiOxNyO content in every layer material in inner cladding 6 from bottom to up
It is stepped up, N content gradually reduces, and progressively gradient reduces refractive index.
It is described with SOI wafer substrate 5 be bottom gradient lamination SiOxNyRefractive Index of Material in inner cladding 6 in minimum layer material
Less than silicon photon tapered transmission line 3 and the refractive index of silicon photon slab waveguide 4, top Refractive Index of Material is higher than SiO2Surrounding layer
1 Refractive Index of Material.
Utility model works principle is：
In the utility model spot-size converter waveguide core layer be silicon nanometer waveguide, inner cladding SiOxNyLaminated material, this is interior
Covering contains multilayered structure, the SiO in every layer structurexNyContaining different O, N content, different O, the SiO of N contentxNyHave
Different Refractive Index of Material.Laminated material SiOxNyBy being stepped up O content, N content reduces respectively layer simultaneously from bottom to up
Layer material refractive index progressively reduces.The outsourcing layer of the utility model spot-size converter is SiO2, believe from the light of optical fiber output
Number SiO is coupled into firstxNyIn laminated material waveguide, surrounding layer SiO at this time2As SiOxNyThe covering of laminated material waveguide,
Enable optical signal in SiOxNyStablize transmission in laminated material waveguide；Simultaneously as SiOxNyLaminated material waveguide is lamination knot
Structure, outer layer refractive index is low and inner refractive index is high, and light energy progressively concentrates on SiO in transmission processxNyLaminated material waveguide
Intermediate region；When optical signal transmission is to silicon photonic waveguide, since silicon photonic waveguide has higher refractive index, it is concentrated in
SiOxNyThe optical signal in lamination center region can pass through silicon photon tapered transmission line and be coupled into silicon photon slab waveguide, this
When silicon photon slab waveguide covering be SiOxNyLaminated construction.
Using SOI wafer, based on semiconductor CMOS manufacture craft, can realize the utility model proposes refractive index gradient
The silicon photon spot-size converter of variation.Main integrated process flow is as follows.
Step 1：Using the SOI wafer with thicker oxygen buried layer, as shown in Fig. 2-1, SOI wafer substrate 5 is prepared.
Silicon photonic waveguide structure is produced by photoetching, etching technics first（Including silicon photon tapered transmission line 3 and silicon photon slab waveguide
4）, as shown in Fig. 2-2.Using multiple photoetching and etching technics, the silicon photon tapered transmission line 3 of overlay structure and silicon light can be obtained
Sub- slab waveguide 4.
Step 2：After over cleaning, in one layer of SiO of silicon photonic waveguide disposed thereon2Top covering.Pass through photoetching, etching again
Technique is in spot-size converter region etch SiO2Top covering, etched surface are parked in plane in silicon photonic waveguide, as Figure 2-3.
Step 3：By photoetching process, make photoresist covering silicon photonic waveguide, SiO2Support construction 2 and make photoresist
The region outside spot-size converter is covered, these regions is protected to be further etched.Using etching technics to SiO2Further carve
Erosion reserves one layer of SiO in etching trench bottom2Layer forms SiO as surrounding layer bottom2Surrounding layer the latter half, is formed simultaneously
SiO2Support construction 2, as in Figure 2-4.At this point, obtained structure three-dimensional figure is as shown in Figure 3.
Step 4：After removing photoresist and cleaning, with PECVD deposition methods, layer by layer deposition lamination SiO from the bottom to topxNyInner cladding,
Successively change SiOxNyThe content of middle O and N differs the O in each layer and N content, and O content successively increases from bottom to up, and its
Refractive index successively reduces.
Step 5：By photoetching process, photoresist is made to cover spot-size converter nucleus, to spot-size converter with outskirt
The SiO in domainxNyLamination performs etching, and etching stopping is in SiO2Surface, cross-sectional view is as shown in Figure 2-5.At this point, obtained structure
Graphics is as shown in Figure 4.
Step 6：After removing photoresist and cleaning, with PECVD deposition methods, the SiO of a thickness is deposited on the soi wafer2Covering.
By exposing the SiO with anti-lithographic technique to deposition2The etching of making choice property, then using physical chemistry polishing method to chip
Surface is polished, and the device cross-section finally obtained is as shown in figures 2-6.At this point, obtained structure three-dimensional figure is as shown in Figure 1.
The beneficial effects of the utility model are：The utility model is effectively changing to current hanging bridge structure spot-size converter
Into optical coupled principle and hanging bridge structure spot-size converter are essentially identical, but substitute hanging knot by gradient lamination inner cladding
Structure can be carried greatly and do the mechanical property of spot-size converter and the reliability of device, therefore the utility model not only has very well
Optical property, while there is good reliability.All technique is completely simultaneous with current CMOS technology in the utility model
Hold, can realize the scale of mass production of device, help to promote the extensive use of silicon photonic integrated device.The utility model is in light
The research fields such as fiber communication, military affairs, medical treatment, biology have a wide range of applications.
Description of the drawings
Fig. 1 is the utility model three dimensional structure diagram；
Fig. 2 is the utility model process flow diagram；
Fig. 3 is three dimensional structure diagram of the utility model before sedimentation gradient laminated material；
Fig. 4 is three dimensional structure diagram of the utility model after gradient lamination inner cladding is formed.
Fig. 5 is three dimensional structure diagram of the utility model embodiment 2 before sedimentation gradient laminated material.
In figure：1-SiO2Surrounding layer, 2-SiO2Support construction, 3- silicon photon tapered transmission lines, 4- silicon photon slab waveguides, 5-
SOI wafer substrate, 6- gradient laminations SiOxNyInner cladding, 7- gradient laminations SiOxNyInner cladding first layer, 8- gradient laminations
SiOxNyThe inner cladding second layer, 9- gradient laminations SiOxNyInner cladding third layer, 10- gradient laminations SiOxNyThe 4th layer of inner cladding,
11- gradient laminations SiOxNyInner cladding layer 5,12- gradient laminations SiOxNyInner cladding layer 6,13- gradient laminations SiOxNyIt is interior
Covering layer 7,14 gradient lamination SiOxNyThe 8th layer of inner cladding, 15- gradient laminations SiOxNyThe 9th layer of inner cladding.
Specific embodiment
With reference to the accompanying drawings and detailed description, the utility model is described in further detail.
Embodiment 1
As shown in Fig. 1,3 and 4, the silicon photon spot-size converter of refractive index gradient variation, including SiO2Surrounding layer 1, SiO2
Support construction 2, silicon photon tapered transmission line 3, silicon photon slab waveguide 4, SOI wafer substrate 5 and gradient lamination SiOxNyInner cladding 6,
5 surface of SOI wafer substrate is equipped with SiO2Support construction 2, SiO22 upper surface of support construction and 3 lower surface phase of silicon photon tapered transmission line
Even, silicon photon tapered transmission line 3 is in same plane with silicon photon slab waveguide 4, and positioned at SiO22 top of support construction, SiO2Branch
Support structure 2, silicon photon tapered transmission line 3, silicon photon slab waveguide 4 are equipped with the gradient lamination for surrounding the closing of these three structures
SiOxNyInner cladding 6, gradient lamination SiOxNyIt with SOI wafer substrate 5 is bottom refractive index progressively gradient from bottom to up that inner cladding 6, which is,
Nine reduced are stacked layer of material（Sequentially consist of gradient lamination SiOxNyInner cladding first layer 7, gradient lamination SiOxNy
The inner cladding second layer 8, gradient lamination SiOxNyInner cladding third layer 9, gradient lamination SiOxNyThe 4th layer 10 of inner cladding, gradient are folded
Layer SiOxNyInner cladding layer 5 11, gradient lamination SiOxNyInner cladding layer 6 12, gradient lamination SiOxNyInner cladding layer 7
13rd, gradient lamination SiOxNyThe 8th layer 14 of inner cladding, gradient lamination SiOxNyThe 9th layer 15 of inner cladding）, gradient lamination SiOxNyIt is interior
Covering 6 is surrounded by SiO2Surrounding layer 1.
Wherein SiO2Surrounding layer 1 is located on SOI wafer substrate 5；SiO2Support construction 2 buries oxygen for 5 chip of SOI wafer substrate
The part of layer；Silicon photon tapered transmission line 3 is individual layer tapered transmission line structure, 3 end cross section of silicon photon tapered transmission line and silicon photon
4 cross section of slab waveguide is identical；Silicon photon tapered transmission line 3 and silicon photon slab waveguide 4 are located at SiO2Support construction 2 and gradient are folded
Layer SiOxNyBetween inner cladding 6.
Wherein, the thickness of silicon photon tapered transmission line 3 and silicon photon slab waveguide 4 is 220nm, silicon photon slab waveguide 4
Width is 400nm；Silicon photon tapered transmission line 3 is single pyramidal structure, and tip and terminal end width are respectively 50nm, 400nm, silicon light
Sub- 3 length of tapered transmission line is 50 μm.Silicon photon slab waveguide 4 is a length of 50 μm in spot-size converter, 4 end of silicon photon slab waveguide
End is connected with other silicon photonic waveguides in SOI wafer substrate 5SOI chips.3 tip of silicon photon tapered transmission line is from spot-size converter
Input end face distance is 50 μm.SiO below silicon photonic waveguide2The width of support construction 2 is 400nm, is highly 2 μm.SiO2Support
The SiO of 2 lower section of structure21 bottom thickness of surrounding layer is 1 μm, SiO21 bottom inner width of surrounding layer is 9 μm, and length is 150 μm.Refraction
The SiO of rate gradedxNyInner cladding 6 is made of the material layer that 9 layers of refractive index gradient change, and layers of material is logical from bottom to up
Believe that waveguide index is respectively 2.1,2.0,1.9,1.8,1.7,1.65,1.6,1.55,1.5, the refractive index of layers of material passes through
SiOxNyIn O, N atomic molar content be respectively 0,4/3；0.3、3.4/3；0.5、3/3；0.7、2.6/3；1.0、2/3；1.2、
1.6/3；1.5、1/3；1.7、0.6/3；1.9、0.2/3.Respectively 0.25 μm from bottom to up of the thickness of 9 layers of refractive index gradient, 0.3
µm、0.3µm、0.35µm、0.35µm、0.4µm、0.4µm、0.45µm、0.5µm.The SiO of refractive index gradient variationxNyInner cladding 6
The SiO of top2The thickness at 1 top of surrounding layer is 2 μm after physical chemistry polishing.
It is described with SOI wafer substrate 5 be bottom gradient lamination SiOxNyMaterial in inner cladding 6 in minimum layer material（Gradient is folded
Layer SiOxNyInner cladding first layer 7）Refractive index is less than silicon photon tapered transmission line 3（Refractive index is 3.47）With silicon photon slab waveguide 4
Refractive index（Refractive index is 3.47）, top material（Gradient lamination SiOxNyThe 9th layer 15 of inner cladding）High refractive index in
SiO21 Refractive Index of Material of surrounding layer（Refractive index is 1.45）.
Embodiment 2
As shown in figure 5, the silicon photon spot-size converter of refractive index gradient variation, including SiO2Surrounding layer 1, SiO2Support
Structure 2, silicon photon tapered transmission line 3, silicon photon slab waveguide 4, SOI wafer substrate 5 and gradient lamination SiOxNyInner cladding 6, SOI
5 surface of wafer substrates is equipped with SiO2Support construction 2, SiO22 upper surface of support construction is connected with 3 lower surface of silicon photon tapered transmission line,
Silicon photon tapered transmission line 3 is in same plane with silicon photon slab waveguide 4, and positioned at SiO22 top of support construction, SiO2Support
Structure 2, silicon photon tapered transmission line 3, silicon photon slab waveguide 4 are equipped with the gradient lamination for surrounding the closing of these three structures
SiOxNyInner cladding 6, gradient lamination SiOxNyIt with SOI wafer substrate 5 is bottom refractive index progressively gradient from bottom to up that inner cladding 6, which is,
Nine reduced are stacked layer of material, gradient lamination SiOxNyInner cladding 6 is surrounded by SiO2Surrounding layer 1.
Wherein SiO2Surrounding layer 1 contains 5 container portion oxygen buried layer of SOI wafer substrate；SiO2Support construction 2 is and SOI wafer
5 chip oxygen buried layer of substrate is connected；Silicon photon tapered transmission line 3 is double layered cone waveguiding structure, and 3 end of silicon photon tapered transmission line is horizontal
Section is identical with 4 cross sections of silicon photon slab waveguide；Silicon photon tapered transmission line 3 and silicon photon slab waveguide 4 are located at SiO2Support
Structure 2 and gradient lamination SiOxNyBetween inner cladding 6.
Wherein, the thickness of silicon photon tapered transmission line 3 and silicon photon slab waveguide 4 is 220nm, silicon photon slab waveguide 4
Width is 400nm；Silicon photon tapered transmission line 3 is biconial laminated construction, upper strata capitate tip and terminal end width be respectively 50nm,
400nm, lower floor's capitate tip and terminal end width are also respectively 50nm, 400nm, and upper strata capitate length is 25 μm, and lower floor's capitate is long
It spends for 50 μm, upper and lower layer capitate duct thickness is 110nm.Silicon photon slab waveguide 4 a length of 50 μm in spot-size converter,
4 end of silicon photon slab waveguide is connected with other silicon photonic waveguides in SOI wafer.3 tip of silicon photon tapered transmission line is from mould spot
Switch input identity distance is from for 100 μm.SiO below silicon photonic waveguide2The width of support construction 2 is 400nm, is highly 2 μm.
SiO2The SiO of 2 lower section of support construction21 bottom thickness of surrounding layer is 1 μm, SiO21 bottom inner width of surrounding layer is 9 μm, length 150
µm.The SiO of refractive index gradient variationxNyInner cladding 6 is made of the material layer that 9 layers of refractive index gradient change, from bottom to up each layer material
Material is respectively 2.1,2.0,1.9,1.8,1.7,1.65,1.6,1.55,1.5 in communication waveguide index, the refraction of layers of material
Rate passes through SiOxNyIn O, N content be respectively O, N atomic molar content be respectively 0,4/3；0.3、3.4/3；0.5、3/3；
0.7、2.6/3；1.0、2/3；1.2、1.6/3；1.5、1/3；1.7、0.6/3；1.9、0.2/3.The thickness of 9 layers of refractive index gradient from
Under it is supreme be respectively 0.25 μm, 0.3 μm, 0.3 μm, 0.35 μm, 0.35 μm, 0.4 μm, 0.4 μm, 0.45 μm, 0.5 μm.Refractive index
The SiO of gradedxNyThe SiO of 6 top of inner cladding2The thickness at 1 top of surrounding layer is 2 μm after physical chemistry polishing.
It is described with SOI wafer substrate 5 be bottom gradient lamination SiOxNyMaterial in inner cladding 6 in minimum layer material（Gradient is folded
Layer SiOxNyInner cladding first layer 7）Refractive index is less than silicon photon tapered transmission line 3（Refractive index is 3.47）With silicon photon slab waveguide 4
Refractive index（Refractive index is 3.47）, top material（Gradient lamination SiOxNyThe 9th layer 15 of inner cladding）High refractive index in
SiO21 Refractive Index of Material of surrounding layer（Refractive index is 1.45）.
Embodiment 3
The silicon photon spot-size converter of refractive index gradient variation, including SiO2Surrounding layer 1, SiO2Support construction 2, silicon light
Sub- tapered transmission line 3, silicon photon slab waveguide 4, SOI wafer substrate 5 and gradient lamination SiOxNyInner cladding 6,5 table of SOI wafer substrate
Face is equipped with SiO2Support construction 2, SiO22 upper surface of support construction is connected with 3 lower surface of silicon photon tapered transmission line, silicon photon taper
Waveguide 3 is in same plane with silicon photon slab waveguide 4, and positioned at SiO22 top of support construction, SiO2Support construction 2, silicon light
Sub- tapered transmission line 3, silicon photon slab waveguide 4 are equipped with the gradient lamination SiO for surrounding the closing of these three structuresxNyInner cladding 6,
Gradient lamination SiOxNyInner cladding 6 be with SOI wafer substrate 5 be bottom from bottom to up refractive index progressively gradient reduce six layer laminates
Material layer, gradient lamination SiOxNyInner cladding 6 is surrounded by SiO2Surrounding layer 1.
Wherein SiO2Surrounding layer 1 contains 5 container portion oxygen buried layer of SOI wafer substrate；SiO2Support construction 2 is and SOI wafer
5 chip oxygen buried layer of substrate is connected；Silicon photon tapered transmission line 3 is double layered cone waveguiding structure, and 3 end of silicon photon tapered transmission line is horizontal
Section is identical with 4 cross sections of silicon photon slab waveguide；Silicon photon tapered transmission line 3 and silicon photon slab waveguide 4 are located at SiO2Support
Structure 2 and gradient lamination SiOxNyBetween inner cladding 6.
Wherein, the thickness of silicon photon tapered transmission line 3 and silicon photon slab waveguide 4 is 220nm, silicon photon slab waveguide 4
Width is 400nm；Silicon photon tapered transmission line 3 is biconial laminated construction, upper strata capitate tip and terminal end width be respectively 50nm,
400nm, lower floor's capitate tip and terminal end width are also respectively 50nm, 400nm, and upper strata capitate length is 25 μm, and lower floor's capitate is long
It spends for 50 μm, upper and lower layer capitate duct thickness is 110nm.Silicon photon slab waveguide 4 a length of 50 μm in spot-size converter,
4 end of silicon photon slab waveguide is connected with other silicon photonic waveguides in SOI wafer.3 tip of silicon photon tapered transmission line is from mould spot
Switch input identity distance is from for 5 μm.SiO below silicon photonic waveguide2The width of support construction 2 is 400nm, is highly 2 μm.
SiO2The SiO of 2 lower section of support construction21 bottom thickness of surrounding layer is 1 μm, SiO21 bottom inner width of surrounding layer is 9 μm, length 150
µm.The SiO of refractive index gradient variationxNyInner cladding 6 is made of the material layer that 6 layers of refractive index gradient change, from bottom to up each layer material
Material is respectively 2.1,2.0,1.9,1.8,1.7,1.65 in communication waveguide index, and the refractive index of layers of material passes through SiOxNyIn
O, N content be respectively O, N atomic molar content be respectively 0,4/3；0.3、3.4/3；0.5、3/3；0.7、2.6/3；1.0、
2/3；1.2、1.6/3.The thickness of 6 layers of refractive index gradient from bottom to up be respectively 0.25 μm, 0.3 μm, 0.3 μm, 0.35 μm, 0.35
µm、0.4µm.The SiO of refractive index gradient variationxNyThe SiO of 6 top of inner cladding2The thickness at 1 top of surrounding layer is thrown in physical chemistry
It is 2 μm after light.
It is described with SOI wafer substrate 5 be bottom gradient lamination SiOxNyRefractive Index of Material in inner cladding 6 in minimum layer material
Less than silicon photon tapered transmission line 3（Refractive index is 3.47）With the refractive index of silicon photon slab waveguide 4（Refractive index is 3.47）, highest
The Refractive Index of Material of layer is higher than SiO21 Refractive Index of Material of surrounding layer（Refractive index is 1.45）.
Specific embodiment of the present utility model is explained in detail above in association with attached drawing, but the utility model is not
It is limited to the above embodiment, within the knowledge of a person skilled in the art, this practicality can also be not being departed from
Various changes can be made on the premise of new objective.
Claims (6)
1. a kind of silicon photon spot-size converter of refractive index gradient variation, it is characterised in that：Including SiO2Surrounding layer（1）、SiO2Branch
Support structure（2）, silicon photon tapered transmission line（3）, silicon photon slab waveguide（4）, SOI wafer substrate（5）With gradient lamination SiOxNyIt is interior
Covering（6）, SOI wafer substrate（5）Surface is equipped with SiO2Support construction（2）, SiO2Support construction（2）It is bored with silicon photon upper surface
Shape waveguide（3）Lower surface is connected, silicon photon tapered transmission line（3）With silicon photon slab waveguide（4）In same plane, and it is located at
SiO2Support construction（2）Top, SiO2Support construction（2）, silicon photon tapered transmission line（3）, silicon photon slab waveguide（4）It is equipped with
The gradient lamination SiO that the closing of these three structures is surroundedxNyInner cladding（6）, gradient lamination SiOxNyInner cladding（6）For with SOI crystalline substances
Piece substrate（5）For bottom from bottom to up refractive index progressively gradient reduce the laminated material bed of material, gradient lamination SiOxNyInner cladding（6）Four
Week is equipped with SiO2Surrounding layer（1）.
2. the silicon photon spot-size converter of refractive index gradient variation according to claim 1, it is characterised in that：The SiO2
Surrounding layer（1）Positioned at SOI wafer substrate（5）On, contain SOI wafer substrate（5）Container portion oxygen buried layer.
3. the silicon photon spot-size converter of refractive index gradient variation according to claim 1, it is characterised in that：The SiO2
Support construction（2）For SOI wafer substrate（5）The part of chip oxygen buried layer or with SOI wafer substrate（5）Chip oxygen buried layer is connected
It connects.
4. the silicon photon spot-size converter of refractive index gradient variation according to claim 1, it is characterised in that：The silicon light
Sub- tapered transmission line（3）For individual layer or lamination tapered transmission line structure, silicon photon tapered transmission line（3）Tip and input end face spacing 5~
100 microns, silicon photon tapered transmission line（3）End cross section and silicon photon slab waveguide（4）Cross section is identical.
5. the silicon photon spot-size converter of the refractive index gradient variation according to claim 1 or 4, it is characterised in that：It is described
Silicon photon tapered transmission line（3）With silicon photon slab waveguide（4）Positioned at SiO2Support construction（2）With gradient lamination SiOxNyInner cladding
（6）Between or embedded in SiO2Support construction（2）It is internal.
6. the silicon photon spot-size converter of refractive index gradient variation according to claim 1, it is characterised in that：It is described with
SOI wafer substrate（5）For bottom gradient lamination SiOxNyInner cladding（6）In Refractive Index of Material in minimum layer material be less than silicon photon
Tapered transmission line（3）With silicon photon slab waveguide（4）Refractive index, top Refractive Index of Material be higher than SiO2Surrounding layer（1）Material
Expect refractive index.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110857977A (en) * | 2018-08-23 | 2020-03-03 | 北京万集科技股份有限公司 | Optical antenna, phased array laser radar and two-dimensional scanning method of optical antenna |
| GB2591596A (en) * | 2017-08-03 | 2021-08-04 | Finisar Corp | Echelle grating multiplexer or demultiplexer |
| WO2023040861A1 (en) * | 2021-09-15 | 2023-03-23 | 华为技术有限公司 | Optical coupler, optical chip and optical communication device |
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2017
- 2017-07-10 CN CN201720828381.1U patent/CN207457539U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2591596A (en) * | 2017-08-03 | 2021-08-04 | Finisar Corp | Echelle grating multiplexer or demultiplexer |
| GB2591596B (en) * | 2017-08-03 | 2021-12-22 | Finisar Corp | Echelle grating multiplexer or demultiplexer |
| CN110857977A (en) * | 2018-08-23 | 2020-03-03 | 北京万集科技股份有限公司 | Optical antenna, phased array laser radar and two-dimensional scanning method of optical antenna |
| WO2023040861A1 (en) * | 2021-09-15 | 2023-03-23 | 华为技术有限公司 | Optical coupler, optical chip and optical communication device |
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