CN207408908U - A kind of system power supply overvoltage protective system of storage server - Google Patents
A kind of system power supply overvoltage protective system of storage server Download PDFInfo
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Abstract
The utility model provides a kind of system power supply overvoltage protective system of storage server; including system power supply module; system power supply module is connected with voltage processing module, and voltage processing module is connected with voltage comparison module, and voltage comparison module is connected with energy supply control module；System power supply module includes several voltages to be detected；Voltage comparison module includes voltage protection chip; voltage protection chip includes control source test side, voltage control output end and delay electric capacity connecting pin; delay electric capacity connecting pin is connected with delay electric capacity, the other end ground connection of delay electric capacity, and the value of delay electric capacity is less than given threshold.The action of cutting system power supply when the utility model replaces the progress overvoltage of basic management chip abnormal using voltage protection chip; compared to the reaction time of basic management chip; it substantially increases and the abnormal reaction treatment speed of overvoltage occurs; system fast shut-off power supply can be allowed, it is entirely avoided the risk of storage server equipment is damaged due to overvoltage.
Description
Technical field
The utility model belongs to storage server power protection field, and in particular to a kind of system power supply of storage server
Overvoltage protective system.
Background technology
With flourishing for Internet technology, the storage and management of data become the common requirements of all trades and professions.It is based on
This demand, storage server have obtained significant progress.With the development of storage server, production of the people to storage server
Quality and product stability are it is also proposed that increasingly higher demands.
The system power supply of storage server generally has more than ten groups, once overvoltage exception occurs for a certain group of power supply, it is most likely that
The destruction of unrepairable is generated to rear end equipment, designing the system power supply overvoltage protection of storage server can be abnormal
Instantaneous trip system power supply protects storage server, avoids that serious damage occurs, improves the product stability of storage server.
The system power supply overvoltage protection scheme of existing storage server passes through basic management chip（BMC, baseboard
management controller）The voltage of each group power supply is detected, passes through the mistake with the default each group power supply of basic management chip
Pressure protection point compares, if certain the group voltage detected is higher than the default over-voltage protection point of basic management chip, basic management
Chip sends instruction cutting system power supply, avoids storage service that serious damage event occurs.
The pattern of basic management chip detecting voltage is repeating query formula, i.e. basic management chip can be successively read on data/address bus
All data, if it find that just sending alarm when some data is problematic.But the data that basic management chip needs manage are too
The cycle of more repeating queries once is about 2 ~ 3 seconds.If overvoltage exception, basic management chip occur for a certain power supply chip in this time
The reaction time acted is too long, possibly can not avoid storage server that serious damage occurs.
This is the deficiencies in the prior art, therefore, for drawbacks described above of the prior art, provides a kind of storage server
System power supply overvoltage protective system, is necessary.
The content of the invention
It is the purpose of this utility model is that long for the above-mentioned basic management chip overvoltage protection reaction time, it is impossible to
The defects of storage server is avoided due to overvoltage board to be caused seriously to damage completely provides a kind of system electricity of storage server
Source overvoltage protective system, to solve above-mentioned technical problem.
To achieve the above object, the utility model provides following technical scheme：
A kind of system power supply overvoltage protective system of storage server, including system power supply module, system power supply module connects
Voltage processing module is connected to, voltage processing module is connected with voltage comparison module, and voltage comparison module is connected with power supply control mould
Block；System power supply module includes several voltage ends to be detected；
Voltage comparison module includes voltage protection chip, and voltage protection chip includes control source test side, voltage controls
Output terminal and delay electric capacity connecting pin, delay electric capacity connecting pin are connected with delay electric capacity, the other end ground connection of delay electric capacity, delay
The value of capacitance is less than given threshold.
Further, voltage processing module includes partial pressure unit, protection location and voltage regulation unit.
Further, energy supply control module includes triode, control switchs, draw high voltage end and system input voltage enables
End.
Further, system power supply module includes 1.05V working voltages end, 1.5V working voltages end, 0.9V working voltages
End, 1.5V sleep modes voltage end, start 5V voltage ends, start 3V voltage ends, 12V voltage ends, CPU voltage ends, South Bridge chip
PEX leakage voltage end and South Bridge chip NV leakage voltage end.
Further, protection location includes five cache switching diodes, and the first cache switching diodes, the second high speed are opened
Close diode, the 3rd cache switching diodes, the 4th cache switching diodes and the 5th cache switching diodes, five high speeds
Switching diode includes first input end, the second input terminal and output terminal；
Partial pressure unit include first resistor, second resistance, 3rd resistor, the 4th resistance, the 5th resistance, the 6th resistance and
7th resistance；
Voltage regulation unit includes the first zener diode and the second zener diode；
1.05V working voltages end connects the second input terminal of the first cache switching diodes, the connection of 1.5V working voltages end
The first input end of first cache switching diodes；
0.9V working voltages end connects the second input terminal of the second cache switching diodes, and 1.5V sleep modes voltage end connects
The first input end of the second cache switching diodes is connect, 1.5V sleep mode voltage ends are connected with the first capacitance；
5V voltage ends of starting shooting connect first resistor, the other end connection second resistance of first resistor and the 3rd high-speed switch two
Second input terminal of pole pipe, the other end ground connection of second resistance, start 3V voltage ends connection 3rd resistor, 3rd resistor it is another
The first input end of end the 4th resistance of connection and the 3rd cache switching diodes, the other end ground connection of the 4th resistance；
12V voltage ends connect the cathode of the first zener diode, and the anode of the first zener diode connects the 5th resistance, the
The other end of five resistance is connected with the second capacitance, and the other end of the 5th resistance is also connected with the 6th resistance and two pole of the 4th high-speed switch
Second input terminal of pipe, the other end of the 6th resistance and the other end of the second capacitance are connected and are grounded, CPU voltage ends connection the 4th
The first input end of cache switching diodes；
The PEX leakage voltage ends of South Bridge chip connect the second input terminal of the 5th cache switching diodes, South Bridge chip
NV leakage voltage ends connect the first input end of the 5th cache switching diodes；
The output terminal of first cache switching diodes connects output terminal, the 3rd high-speed switch of the second cache switching diodes
The output terminal of diode, the output terminal of the 4th cache switching diodes, the output terminal and the 7th of the 5th cache switching diodes
Resistance；Cache switching diodes are used to prevent electric current from reversely burning voltage end to be measured；
The other end of 7th resistance connects the cathode of the second zener diode, and the other end of the 7th resistance is also associated with the 3rd
Capacitance and voltage processing module output terminal, the plus earth of the second zener diode, the other end ground connection of the 3rd capacitance.
Further, voltage protection chip further includes ground terminal, ground terminal ground connection, the control source inspection of voltage protection chip
End is surveyed to be connected with voltage processing module output terminal.
Further, the control switch of energy supply control module uses N-channel enhancement mode FET, energy supply control module
Triode uses NPN type triode；
It draws high voltage end and is connected with the 8th resistance, the collector of the other end connection NPN type triode of the 8th resistance, NPN
The base stage connection voltage processing module output terminal of type triode, the emitter of NPN type triode are connected with the 9th resistance, the 9th electricity
The voltage control output end of other end connection voltage chips of resistance and the grid of N-channel enhancement mode FET, the 9th resistance
The other end is also associated with the tenth resistance, the other end ground connection of the tenth resistance, the source electrode ground connection of N-channel enhancement mode FET, N ditches
The drain electrode connection system input voltage Enable Pin of the enhanced field-effect tube in road.
Further, the first cache switching diodes, the second cache switching diodes, the 3rd cache switching diodes,
Four cache switching diodes and the 5th cache switching diodes use the cache switching diodes of CHN222PT models；
First resistor use 27K Ω precision for ± 1% resistance, second resistance use 20K Ω precision for ± 1% resistance,
3rd resistor uses 27K Ω precision, and for ± 1% resistance, the 4th resistance uses 47K Ω precision as ± 1% resistance, the 5th resistance
Using 27K Ω precision, the 6th resistance uses 14.7K Ω precision, and for ± 1% resistance, the 7th resistance is using 1 K for ± 1% resistance
Ω precision is ± 5% resistance, and the first capacitance uses the capacitance of 0.1UF/6.3V precision ± 10%, and the second capacitance uses 2.2UF/
The capacitance of 10V precision ± 20%, the 3rd capacitance use the capacitance of 0.1UF/6.3V precision ± 10%；
Using 6.2V zener diodes, the first zener diode uses for first zener diode and the second zener diode
The zener diode of model MMSZ5234BPT models, the second zener diode are steady using model MMHZ5234BPZ models
Press diode.
Further, delay electric capacity uses the capacitance of 0.01UF/10V precision ± 10%.
Further, draw high the voltage value of voltage end as 12V, the 9th resistance use 10K Ω precision for ± 1% resistance, the
Ten resistance use 100K Ω precision, and for ± 1% resistance, triode is using the triode of the NPN type number of 2PC4617Q models, switch
Pipe uses the field-effect tube of 2N7002EPT models.
When the system power supply of storage server all works normally, i.e., the voltage error of each voltage end to be measured is all in threshold value
In the range of when, the voltage of the control source test side of voltage protection chip is less than the first given threshold, the electricity of voltage protection chip
Pressure control output end is low level, and control switch cannot be opened, and storage server system can work normally；
When overvoltage exception occurs for a certain voltage end to be measured of storage server, then the control source inspection of voltage comparable chip
The voltage for surveying end is more than the second given threshold, and by time delay, the voltage control output end of voltage comparable chip becomes high resistant
Anti- state, the voltage of triode increase gain close to 1, and the emitter voltage of triode follows collector voltage, by the 9th
After resistance and the tenth electric resistance partial pressure, control switch is opened, and the signal of system input voltage Enable Pin drags down, cutting system power supply,
Avoid the problem that storage server causes board seriously to damage due to overvoltage；
The value of delay electric capacity determines that time delay determines, changes delay electric capacity, and time delay changes.
The beneficial effects of the utility model are：
Cutting system power supply when the utility model replaces the progress overvoltage of basic management chip abnormal using voltage protection chip
Action, compared to the reaction time of basic management chip, substantially increase and the abnormal reaction treatment speed of overvoltage occur, can be with
Allow system fast shut-off power supply, it is entirely avoided the risk of storage server equipment is damaged due to overvoltage, improves storage service
The product quality and product stability of device.
In addition, the utility model design principle is reliable, and it is simple in structure, there is very extensive application prospect.
It can be seen that the utility model is compared with prior art, there is substantive distinguishing features and progress, the beneficial effect implemented
Fruit is also obvious.
Description of the drawings
Fig. 1 is Tthe utility model system connection diagram；
Fig. 2 is the utility model circuit connection diagram；
Wherein, 1- system power supplies module；1.1-1.05V working voltages end；1.2-1.5V working voltages end；1.3-0.9V fortune
Row voltage end；1.4-1.5V sleep mode voltage ends；1.5- start 5V voltage ends；1.6- start 3V voltage ends；1.7-12V voltage
End；1.8- CPU voltage ends；The PEX leakage voltage ends of 1.9- South Bridge chips；The NV leakage voltage ends of 1.10- South Bridge chips；2-
Voltage processing module；3- voltage comparison modules；3.1- voltage protection chips；3.1.1- control source test side；3.1.2- voltage
Control output end；3.1.3- delay electric capacity connecting pin；3.2- delay electric capacity；4- energy supply control modules；4.1- draws high voltage end；
4.2- system input voltage Enable Pins；The first cache switching diodes of D1-；The second cache switching diodes of D2-；D3- the 3rd is high
Fast switching diode；The 4th cache switching diodes of D4-；The 5th cache switching diodes of D5-；The first zener diodes of D6-；
The second zener diodes of D7-；R1- first resistors；R2- second resistances；R3- 3rd resistors；The 4th resistance of R4-；The 5th electricity of R5-
Resistance；The 6th resistance of R6-；The 7th resistance of R7-；The 8th resistance of R8-；The 9th resistance of R9-；The tenth resistance of R10-；The first capacitances of C1-；
The second capacitances of C2-；The 3rd capacitances of C3-；Q1-NPN type triodes；Q2-N channel enhancement field-effect tube.
Specific embodiment：
It is specific below in conjunction with this to enable the purpose of this utility model, feature, advantage more apparent and understandable
The technical solution in the utility model is clearly and completely described in attached drawing in embodiment.
As shown in Figure 1, the utility model provides a kind of system power supply overvoltage protective system of storage server, feature exists
In including system power supply module 1, system power supply module 1 is connected with voltage processing module 2, and voltage processing module 2 is connected with voltage
Comparison module 3, voltage comparison module 3 are connected with energy supply control module 4；System power supply module 1 includes several voltage ends to be detected；
System power supply module includes 1.05V working voltages end 1.1,1.5V working voltages end 1.2,0.9V working voltages end
1.3rd, 1.5V sleep modes voltage end 1.4, start 5V voltage ends 1.5, start 3V voltage ends 1.6,12V voltage ends 1.7, CPU electricity
The NV leakage voltage ends 1.10 of pressure side 1.8, the PEX leakage voltage ends 1.9 of South Bridge chip and South Bridge chip；
Voltage processing module 2 includes partial pressure unit, protection location and voltage regulation unit；Protection location includes five high-speed switches
Diode is the first cache switching diodes D1, the second cache switching diodes D2, the 3rd cache switching diodes D3, the 4th high
Fast switching diode D4 and the 5th cache switching diodes D5, five cache switching diodes include first input end, the
Two input terminals and output terminal；Partial pressure unit includes first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th
Resistance R5, the 6th resistance R6 and the 7th resistance R7；Voltage regulation unit includes the first zener diode D6 and the second zener diode
D7；
1.05V working voltages end 1.1 connects the second input terminal of the first cache switching diodes D1,1.5V working voltages end
The first input end of 1.2 the first cache switching diodes D1 of connection；
0.9V working voltages end 1.3 connects the second input terminal of the second cache switching diodes D2,1.5V sleep modes electricity
Pressure side 1.4 connects the first input end of the second cache switching diodes (D2), and 1.5V sleep modes voltage end 1.4 is connected with first
Capacitance C1；
5V voltage ends 1.5 of starting shooting connect first resistor R1, the other end connection second resistance R2 and the 3rd of first resistor R1
The second input terminal of cache switching diodes D3, the other end ground connection of second resistance R2, start 3V voltage ends 1.6 connect the 3rd electricity
The first input end of other end connection the 4th resistance R4 and the 3rd cache switching diodes D4 of resistance R3,3rd resistor R3, the 4th
The other end ground connection of resistance R4；
12V voltage ends 1.7 connect the cathode of the first zener diode D6, the anode connection the 5th of the first zener diode D6
The other end of resistance R5, the 5th resistance R5 are connected with the second capacitance C2, and the other end of the 5th resistance R5 is also connected with the 6th resistance R6
With the second input terminal of the 4th cache switching diodes D4, the other end connection of the other end of the 6th resistance R6 and the second capacitance C2
And be grounded, CPU voltage ends 1.8 connect the first input end of the 4th cache switching diodes D4；
The PEX leakage voltage ends 1.9 of South Bridge chip connect the second input terminal of the 5th cache switching diodes D5, south bridge core
The NV leakage voltage ends 1.0 of piece connect the first input end of the 5th cache switching diodes D5；
The output terminal of first cache switching diodes D1 connects the output terminal of the second cache switching diodes D2, the 3rd at a high speed
The output terminal of switching diode D3, the 4th cache switching diodes D4 output terminal, the 5th cache switching diodes D5 output
End and the 7th resistance R7,
The other end of 7th resistance R7 connects the cathode of the second zener diode D7, and the other end of the 7th resistance R7 is also connected with
There is 2 output terminal of the 3rd capacitance C3 and voltage processing module, the plus earth of the second zener diode D7, the 3rd capacitance C3's is another
End ground connection；
It is first cache switching diodes D1, the second cache switching diodes D2, the 3rd cache switching diodes D3, the 4th high
Fast switching diode D4 and the 5th cache switching diodes D5 uses the cache switching diodes of CHN222PT models；
First resistor R1 use 27K Ω precision for ± 1% resistance, second resistance R2 use 20K Ω precision for ± 1% electricity
Resistance, 3rd resistor R3 use 27K Ω precision for ± 1% resistance, the 4th resistance R4 use 47K Ω precision for ± 1% resistance, the
Five resistance R5 use 27K Ω precision for ± 1% resistance, the 6th resistance R6 use 14.7K Ω precision for ± 1% resistance, the 7th
Resistance R7 use 1 K Ω precision for ± 5% resistance, the first capacitance C1 use 0.1UF/6.3V precision ± 10% capacitance, second
Capacitance C2 uses the capacitance of 2.2 UF/10V precision ± 20%, and the 3rd capacitance C3 uses the capacitance of 0.1UF/6.3V precision ± 10%；
First zener diode D6 and the second zener diode D7 is using 6.2V zener diodes, the first zener diode
D6 uses the zener diode of model MMSZ5234BPT models, and the second zener diode D7 uses model MMHZ5234BPZ
The zener diode of model；
Voltage comparison module 3 includes voltage protection chip 3.1, and voltage protection chip 3.1 includes control source test side
3.1.1, voltage control output end 3.1.2 and delay electric capacity connecting pin 3.1.3, delay electric capacity connecting pin 3.1.3 are connected with delay
Capacitance 3.2, the other end ground connection of delay electric capacity 3.2, the value of delay electric capacity 3.2 are less than given threshold；Delay electric capacity 3.2 uses
The capacitance of 0.01UF/10V precision ± 10%；Voltage protection chip 3.1 further includes ground terminal, ground terminal ground connection, voltage protection chip
3.1 control source test side 3.1.1 is connected with 2 output terminal of voltage processing module；
Energy supply control module 4 includes triode, control switch, draws high voltage end 4.1 and system input voltage Enable Pin
4.2；The control switch of energy supply control module 4 using N-channel enhancement mode FET Q1, adopt by the triode of energy supply control module 4
With NPN type triode Q2；
It draws high voltage end 4.1 and is connected with the 8th resistance R8, the collection of the other end connection NPN type triode Q1 of the 8th resistance R8
Electrode, 2 output terminal of base stage connection voltage processing module of NPN type triode Q1, the emitter of NPN type triode Q1 are connected with the
The voltage control output end 3.1.2 of the other end connection voltage chips of nine resistance R9, the 9th resistance R9 and the enhanced field effect of N-channel
Should pipe Q2 grid, the other end of the 9th resistance R9 is also associated with the tenth resistance R10, the other end ground connection of the tenth resistance R10, N
The source electrode ground connection of channel enhancement field-effect tube Q2, the drain electrode connection system input voltage of N-channel enhancement mode FET Q2 make
It can end 4.2；
The voltage value of voltage end 4.1 is drawn high as 12V, the 9th resistance R9 uses 10K Ω precision as ± 1% resistance, the tenth electricity
Resistance R10 uses 100K Ω precision, and for ± 1% resistance, triode is using the triode of the NPN type number of 2PC4617Q models, switch
Pipe uses the field-effect tube of 2N7002EPT models；
When the system power supply of storage server all works normally, i.e., the voltage error of each voltage end to be measured is all in threshold value
In the range of when, the voltage of the control source test side 3.1.1 of voltage protection chip 3.1 is 1.89V, voltage protection chip 3.1
Voltage control output end 3.1.2 is low level, and control switch cannot be opened, and storage server system can work normally；
When overvoltage exception occurs for a certain voltage end to be measured of storage server, then the control source inspection of voltage comparable chip
The voltage for surveying end 3.1.1 is more than 2.5V, by the time delay of 2 ~ 3 microseconds, the voltage control output end of voltage comparable chip 3.1
3.1.2 high impedance status is become, the voltage of triode increases gain close to 1, and the emitter voltage of triode follows collector
Voltage, after the 9th resistance R9 and the tenth resistance R10 partial pressures, control switch is opened, the letter of system input voltage Enable Pin 4.2
It number drags down, cutting system power supply, avoids the problem that storage server causes board seriously to damage due to overvoltage.
The embodiment of the utility model is illustrative and not restrictive, and above-described embodiment is only to aid in understanding this reality
With new, therefore the utility model is not limited to the embodiment described in specific embodiment, every by those skilled in the art's root
The other specific embodiments drawn according to the technical solution of the utility model also belong to the scope of the utility model protection.
Claims (10)
1. the system power supply overvoltage protective system of a kind of storage server, which is characterized in that including system power supply module（1）, it is
System power module（1）It is connected with voltage processing module（2）, voltage processing module（2）It is connected with voltage comparison module（3）, voltage
Comparison module（3）It is connected with energy supply control module（4）；System power supply module（1）Including several voltage ends to be detected；
Voltage comparison module（3）Including voltage protection chip（3.1）, voltage protection chip（3.1）Including control source test side
（3.1.1）, voltage control output end（3.1.2）With delay electric capacity connecting pin（3.1.3）, delay electric capacity connecting pin（3.1.3）Even
It is connected to delay electric capacity（3.2）, delay electric capacity（3.2）The other end ground connection, delay electric capacity（3.2）Value be less than given threshold.
2. the system power supply overvoltage protective system of a kind of storage server as described in claim 1, which is characterized in that at voltage
Manage module（2）Including partial pressure unit, protection location and voltage regulation unit.
A kind of 3. system power supply overvoltage protective system of storage server as claimed in claim 2, which is characterized in that power supply control
Molding block（4）Including triode, control switch, draw high voltage end（4.1）With system input voltage Enable Pin（4.2）.
A kind of 4. system power supply overvoltage protective system of storage server as claimed in claim 3, which is characterized in that system electricity
Source module（1）Including 1.05V working voltages end（1.1）, 1.5V working voltages end（1.2）, 0.9V working voltages end（1.3）、
1.5V sleep mode voltage ends（1.4）, start 5V voltage ends（1.5）, start 3V voltage ends（1.6）, 12V voltage ends（1.7）、
CPU voltage ends（1.8）, South Bridge chip PEX leakage voltage end（1.9）And the NV leakage voltage ends of South Bridge chip（1.10）.
5. the system power supply overvoltage protective system of a kind of storage server as claimed in claim 4, which is characterized in that protection is single
Member includes five cache switching diodes, and the first cache switching diodes D1, the second cache switching diodes D2, the 3rd high speed are opened
It is equal to close diode D3, the 4th cache switching diodes D4 and the 5th cache switching diodes D5, five cache switching diodes
Including first input end, the second input terminal and output terminal；
Partial pressure unit includes first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th electricity
Hinder R6 and the 7th resistance R7；
Voltage regulation unit includes the first zener diode D6 and the second zener diode D7；
1.05V working voltages end (1.1) connects the second input terminal of the first cache switching diodes D1,1.5V working voltages end
(1.2) first input end of the first cache switching diodes D1 is connected；
0.9V working voltages end (1.3) connects the second input terminal of the second cache switching diodes D2,1.5V sleep mode voltages
(1.4) is held to connect the first input end of the second cache switching diodes D2,1.5V sleep modes voltage end (1.4) is connected with first
Capacitance C1；
5V voltage ends (1.5) of starting shooting connect first resistor R1, and the other end connection second resistance R2 and the 3rd of first resistor R1 is high
The second input terminal of fast switching diode D3, the other end ground connection of second resistance R2, start 3V voltage ends (1.6) connect the 3rd electricity
The first input end of other end connection the 4th resistance R4 and the 3rd cache switching diodes D4 of resistance R3,3rd resistor R3, the 4th
The other end ground connection of resistance R4；
12V voltage ends (1.7) connect the cathode of the first zener diode D6, the 5th electricity of anode connection of the first zener diode D6
Hinder R5, the other end of the 5th resistance R5 is connected with the second capacitance C2, the other end of the 5th resistance R5 be also connected with the 6th resistance R6 and
The other end connection of the second input terminal of 4th cache switching diodes D4, the other end of the 6th resistance R6 and the second capacitance C2 are simultaneously
Ground connection, CPU voltage ends (1.8) connect the first input end of the 4th cache switching diodes D4；
The PEX leakage voltage ends (1.9) of South Bridge chip connect the second input terminal of the 5th cache switching diodes D5, South Bridge chip
NV leakage voltage end (1.10) connect the 5th cache switching diodes D5 first input end；
The output terminal of first cache switching diodes D1 connects output terminal, the 3rd high-speed switch of the second cache switching diodes D2
The output terminal of diode D3, the output terminal of the 4th cache switching diodes D4, the 5th cache switching diodes D5 output terminal with
And the 7th resistance R7,
The other end of 7th resistance R7 connects the cathode of the second zener diode D7, and the other end of the 7th resistance R7 is also associated with the
Three capacitance C3 and voltage processing module（2）Output terminal, the plus earth of the second zener diode D7, the other end of the 3rd capacitance C3
Ground connection.
6. the system power supply overvoltage protective system of a kind of storage server as claimed in claim 5, which is characterized in that voltage is protected
Protect chip（3.1）Further include ground terminal, ground terminal ground connection, the control source test side (3.1.1) of voltage protection chip (3.1) with
Voltage processing module（2）Output terminal connects.
A kind of 7. system power supply overvoltage protective system of storage server as claimed in claim 6, which is characterized in that power supply control
The control switch of molding block (4) uses NPN type using N-channel enhancement mode FET Q2, the triode of energy supply control module (4)
Triode Q1；
It draws high voltage end (4.1) and is connected with the 8th resistance R8, the collection of the other end connection NPN type triode Q1 of the 8th resistance R8
Electrode, the base stage connection voltage processing module of NPN type triode Q1（2）Output terminal, the emitter of NPN type triode Q1 are connected with
The voltage control output end of the other end connection voltage protection chip (3.1) of 9th resistance R9, the 9th resistance R9（3.1.2）And N
The grid of channel enhancement field-effect tube Q2, the other end of the 9th resistance R9 are also associated with the tenth resistance R10, the tenth resistance R10
The other end ground connection, N-channel enhancement mode FET Q2 source electrode ground connection, N-channel enhancement mode FET Q2 drain electrode connection
System input voltage Enable Pin (4.2).
8. the system power supply overvoltage protective system of a kind of storage server as claimed in claim 5, which is characterized in that first is high
Fast switching diode D1, the second cache switching diodes D2, the 3rd cache switching diodes D3, the 4th cache switching diodes D4
And the 5th cache switching diodes D5 use CHN222PT models cache switching diodes；
First resistor R1 use 27K Ω precision for ± 1% resistance, second resistance R2 use 20K Ω precision for ± 1% resistance,
3rd resistor R3 use 27K Ω precision for ± 1% resistance, the 4th resistance R4 use 47K Ω precision for ± 1% resistance, the 5th
Resistance R5 uses 27K Ω precision, and for ± 1% resistance, the 6th resistance R6 uses 14.7K Ω precision, and for ± 1% resistance, the 7th is electric
Resistance R7 uses 1 K Ω precision, and for ± 5% resistance, the first capacitance C1 is using the capacitance of 0.1UF/6.3V precision ± 10%, the second electricity
Hold the capacitance that C2 uses 2.2 UF/10V precision ± 20%, the 3rd capacitance C3 uses the capacitance of 0.1UF/6.3V precision ± 10%；
Using 6.2V zener diodes, the first zener diode D6 is adopted first zener diode D6 and the second zener diode D7
With the zener diode of model MMSZ5234BPT models, the second zener diode D7 uses model MMHZ5234BPZ models
Zener diode.
A kind of 9. system power supply overvoltage protective system of storage server as described in claim 1, which is characterized in that deferred telegram
Hold the capacitance that (3.2) use 0.01UF/10V precision ± 10%.
10. the system power supply overvoltage protective system of a kind of storage server as claimed in claim 7, which is characterized in that draw high
The voltage value of voltage end (4.1) is 12V, and the 9th resistance R9 uses 10K Ω precision as ± 1% resistance, the tenth resistance R10 uses
100K Ω precision is ± 1% resistance, and triode is using the triode Q1 of the NPN type number of 2PC4617Q models, switching tube use
The field-effect tube Q2 of 2N7002EPT models.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107526422A (en) * | 2017-08-28 | 2017-12-29 | 郑州云海信息技术有限公司 | A kind of system power supply overvoltage protective system of storage server |
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2017
- 2017-08-28 CN CN201721084958.9U patent/CN207408908U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107526422A (en) * | 2017-08-28 | 2017-12-29 | 郑州云海信息技术有限公司 | A kind of system power supply overvoltage protective system of storage server |
| CN107526422B (en) * | 2017-08-28 | 2020-09-29 | 苏州浪潮智能科技有限公司 | System power supply overvoltage protection system of storage server |
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