CN207337029U - A kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device - Google Patents
A kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device Download PDFInfo
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- CN207337029U CN207337029U CN201721075811.3U CN201721075811U CN207337029U CN 207337029 U CN207337029 U CN 207337029U CN 201721075811 U CN201721075811 U CN 201721075811U CN 207337029 U CN207337029 U CN 207337029U
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Abstract
A kind of flexible tunable visible near-infrared bands branch fiber waveguide device, belongs to electrochromism technology and fiber waveguide device field.In the upper surface of flexible transparent substrate, tiling has normal light waveguide-layer, electrochromism light waveguide-layer, normal light waveguide-layer, electrochromism light waveguide-layer are at one layer, normal light waveguide-layer uses two branched structure of Y types, the B strips and C strips after A strips, branch i.e. before branch, a side and electrochromism light waveguide-layer a side of the A strips before normal light waveguide-layer y-branch are closely coupled；Electrochromism light waveguide-layer also leads to conductive electrode, and conductive electrode overlaps with electrochromism light waveguide-layer, and conductive electrode is used for the effect to electrochromism light waveguide-layer on-load voltage, and conductive electrode tiling is fixed in flexible transparent substrate；Conductive electrode and normal light waveguide-layer are without directly contacting.Using Electro-optical Modulation effect, light modulation is realized with reference to all optical communication and transmittance.
Description
Technical field
The utility model belongs to electrochromism technology and fiber waveguide device field, and in particular to a kind of flexibility is tunable can
See-near infrared band branch waveguide device.
Background technology
Electrochromism refers to the optical properties (absorptivity, transmitance or reflectivity etc.) of material under the action of extra electric field
There is a phenomenon where stablizing, reversible change, show as the reversible change of color and transparency in appearance.The essence of electrochromism phenomenon
It is a kind of process of electrochemical reaction, with alive change is applied, the thing of material mutually changes and causes device for Optical Properties of Materials
(such as light transmission, refractive index etc.) changes.One word of electrochromism is to be proposed in 1961 by Piatt earliest.Until
Tungstic acid (WO is described in detail within 1969 and Deb in 19733) for film under certain voltage effect, its color can be in nothing
The phenomenon of phase co-conversion between color and blueness.He uses the WO of amorphous for the first time3Film preparation electrochromic device, and carry
Go out the Discoloration mechanism of " Lacking oxygen colour center ", indicate the beginning of electrochromism science and technology research.Hereafter, Ren Menxiang
After the new off-color material of discovery, including NiO, Co3O4、TiO2、MoO3Deng transition metal oxide and polyaniline (PANI), poly- pyrrole
Cough up some high-molecular organic materials such as (PPy) and polythiophene (Polythiophene).It is new to have after late 1980s
The preparation of machine Polymer Electrochromic material and electrochromic device are assembled into a research field to become increasingly active.Sweden
The it is proposed such as scientist C.G.Granqvist and American scientist C.M.Lampert it is a kind of based on electrochomeric films
Novel energy saving window, i.e. smart window (Smart window), become a milestone of electrochromism technical research.So far,
Japan, Europe and some industrial powers of the U.S. maintain the leading position in terms of electrochromism technology application study.China is electroluminescent
Research starting in terms of off-color material and device also has a certain distance than later with external advanced application study technology.Mesh
Before, the institution of higher learning such as Zhejiang University, Jilin University, Tsinghua University, University of Electronic Science and Technology and Chinese Academy of Sciences's Changchun applied chemistry
Research institute, Ningbo material engineering Suo Deng R＆D institutions achieve some relatively prominent achievements.
Fiber waveguide is that one kind can limit light inside it or near surface, guiding light wave are propagated along definite direction
Guide lighting channel, practical fiber waveguide has planar optical waveguide, strip optical waveguide and cylindrical light waveguide.Planar optical waveguide and strip light
Waveguide is mainly used for making active and passive optical waveguide components, such as laser, modulator and photo-coupler, they are using half
Conductor thin film technique, is adapted to the integrated optical circuit that planar structure is made.Fiber waveguide principle is widely used in acquisition of information, letter with device
Breath transmission, information processing and production and living field.In terms of information transmission, active, passive device is can be made into, optical fiber is may make up and leads to
Believe main line, light can be formed and exchange access net, it can be achieved that AON, DWDM, OADM, OTDM and FTTC/B/O/H.Optical branch waveguide device
It is one of indispensable passive device in optical communication network, the flexible light branch-waveguide device that luminous power is tunable is following
Development trend.
Tunable flexible light branch-waveguide device needs to reach three requirements：Tunable, flexible and branch-waveguide device,
Need meeting on the light transparent conductor material of traditional optical branch wave guide and thin-film technique basis, two kinds of redesign addition
Function.Mentality of designing：1st, using the transparent semiconductor film material of amorphous-nano-crystalline structure, flexible can be adapted to require；
2nd, using voltage tunable electrochromic material transmission characteristics, change the luminous power of refraction light, reflected light and refraction light are divided
Do not drawn from two branched bottoms, reach the requirement that voltage quantitatively controls branch's luminous power.
Utility model content
The utility model aim be a kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device of utility model and
Its preparation method, gained branch waveguide device have preferable luminous power tuning performance, stabilization under flexible substrate bending condition
Optical branch effect and the relatively low proportion of goods damageds.
A kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device, it is characterised in that served as a contrast including flexible and transparent
Bottom, conductive electrode, normal light waveguide-layer, electrochromism light waveguide-layer, in the upper surface of flexible transparent substrate, tiling has normal light
Ducting layer, electrochromism light waveguide-layer, at one layer, normal light waveguide-layer uses Y for normal light waveguide-layer, electrochromism light waveguide-layer
Two branched structure of type, i.e., the B strips and C strips after A strips, branch before branch, the A bars before normal light waveguide-layer y-branch
A side and electrochromism light waveguide-layer a side of shape are closely coupled；Electrochromism light waveguide-layer also leads to conductive electrode,
Conductive electrode overlaps with electrochromism light waveguide-layer, and conductive electrode is used for electrochromism light waveguide-layer on-load voltage
Effect, conductive electrode tiling are fixed in flexible transparent substrate；Conductive electrode and normal light waveguide-layer are without directly contacting.
Flexible transparent substrate is PET or PDMS.
Conductive electrode uses layer structure, is metal nano-particle layer or graphene film layer.
The normal light waveguide-layer of the utility model, electrochromism light waveguide-layer select conventional normal light waveguide-layer, electroluminescent
Change colour light waveguide-layer.
Further preferably, normal light waveguide-layer is the transparent semiconductor film material of amorphous-nano-crystalline composite construction, preferably stone
Black alkene adulterates (In2O3)x(ZnO)y(Ga2O3)z(molar ratio of In, Zn, Ga are 0.6-0.9 to thin-film material: 0.2-0.05:0.2-
0.05), the preferred amorphous-nano-crystalline compound structure film material of electrochromism light waveguide-layer (region) material, more preferably (ITO)x
(Nb2O5)y(Ga2O3)zThin-film material, indium, tin, niobium, the molar ratio of gallium are 0.54-0.81:0.06-0.09:0.05-0.35:
0.05-0.35。
Conductive electrode and electrochromism light waveguide-layer overlap part, and conductive electrode is located at flexible transparent substrate and electricity
Between mutagens coloured light ducting layer.
Electrochromism light waveguide-layer is elongate configuration, electrochromism light waveguide-layer elongate configuration long side and normal light waveguide-layer
The long side lengths of A strips before y-branch are identical, and closely connect, the long side of A strips and pair of two branched structure of Y types
Claim axis parallel, as shown in Fig. 1 top views.
The preparation method of the flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device of the utility model, its feature
It is, using conventional preparation method, prepared by individual layer, and pattern, collosol and gel rotation are etched in the photoresist using photoetching technique
Coating prepares monolayer material film, removes photoresist and retains material requested pattern.
Electrochromic layer amorphous-nano-crystalline composite construction (ITO)x(Nb2O5)y(Ga2O3)zThe preparation of film includes following step
Suddenly：
Step 1, by inidum chloride (InCl3), butter of tin (SnCl4), columbium pentachloride (NbCl5) and gallium trichloride
(GaCl3) ammonium hydroxide is added in mixed aqueous solution, adjusting pH value is 8-10 so that cation is fully converted to hydroxide precipitation；
Step 2, clean mixed hydroxides repeatedly with deionized water, alcoholic solvent respectively to precipitate, separation of solid and liquid obtains hydrogen-oxygen
Compound presoma；
Step 3, hydroxide precursor is mixed with ethanol, adds monoethanolamine, ultrasonic disperse is into suspension, by suspension
Insert in autoclave and be heat-treated, obtain the nanocrystalline dispersion liquid of tin indium oxide gallium niobium, carry out spin coating and prepare amorphous-nano-crystalline composite junction
The flexible electrical mutagens coloured light thin film waveguide layer of structure.
Further, mole of the indium ion described in electrochromic layer preparation process 1, tin ion, niobium ion, gallium ion
Than for 0.54-0.81:0.06-0.09:0.05-0.35:0.05-0.35.
Further, the molar ratio of the hydroxide precursor described in electrochromic layer preparation process 3 and monoethanolamine
For 1：2, the heat treatment temperature of autoclave is 200 DEG C -260 DEG C, when the time is 10-40 small.
Prepared by normal light waveguide-layer (i.e. transparent light waveguide-layer) comprises the following steps：
Step 1, graphene oxide water solution Ultrasonic Heating is reduced into graphene nanometer sheet, heating-up temperature and reducing agent are matched somebody with somebody
Than controlling graphene nano chip size, it is centrifuged repeatedly and is washed till neutral aqueous solution, ultrasound is broken up, and is heated to obtaining graphene nano
Particle is spare；
Step 2, by InCl3、Zn(OAC)2、GaCl3Reagent be dissolved in ethylene glycol solution heating stirring to colourless
It is bright, obtain the mixing of indium gallium zinc oxygen colloidal sol；
Step 3, graphene nano particle is mixed with indium gallium zinc oxygen colloidal sol, gained colourless transparent solution is ultrasonic in a water bath
Heating stirring is to sol form；
Step 4, step 3 gained vitreosol is subjected to spin coating by spin coating instrument, then anneals, be repeated a number of times
Spin coating and annealing, are made the transparent optical waveguide film of flexible nano level.
Further, InCl in light waveguide-layer preparation process3、Zn(OAC)2、GaCl3Molar ratio be 0.6-0.9:
0.2-0.05:0.2-0.05；InCl3、Zn(OAC)2、GaCl3Purity be 99.99%, graphene nano particle and InCl3's
The ratio between amount of material is 1:100-1:700.
Further, ultrasound 60 DEG C -95 DEG C of the heating-up temperature of reduction described in light waveguide-layer preparation process 1, time 1-3
Hour；Reducing agent is hydrazine hydrate, hydrazine hydrate and graphene oxide mass ratio 6:10-8:10.
Further, the InCl described in light waveguide-layer preparation process 23、Zn(OAC)2、GaCl3It is molten in ethylene glycol solution
During solution stirring, 20 DEG C -65 DEG C of temperature, when mixing time 0.5-2 is small；
Further, the water bath heating temperature described in light waveguide-layer preparation process 3 is 25 DEG C -80 DEG C, heating time
0.5h-4h。
Further, the Thin-film anneal temperature described in light waveguide-layer preparation process 4 is 50 DEG C -150 DEG C, annealing time
0.5h-2h, repeats spin coating annealing times 4-18 times, and optical waveguide film thickness is in 150nm-3000nm.
The tunable branch waveguide device of the utility model has preferable pliability and Electro-optical Modulation branch luminous power
Effect, using real Electro-optical Modulation effect, light modulation is realized with reference to all optical communication and transmittance.The utility model is in passive light
It is widely used in device, scalability is strong, and production process is simple, the advantage such as of low cost.
The normal light waveguide-layer of the utility model, which is used, produces molecular structure change and functional performance based on element doping
Raw material impact, indium (In) element doping, which has, produces crystalline state nanometer and near infrared region light transmittance castering action, gallium (Ga) member
Element is doped with molecule and keeps non crystalline structure effect, and zinc (Zn) element doping keeps nanocrystalline micro-nano covalent structure, so that
Film has preferable mobility and amorphous-nano-crystalline mixed structure under the conditions of flexible bending.
The normal light waveguide-layer of the utility model uses graphene nano structure doping techniques, effectively improves chemical method
Prepare the problem of flexible and transparent oxide semiconductor thin-film electric property is poor.
Brief description of the drawings
Fig. 1 is flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device structure top view；
Fig. 2 is flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device structural front view；
1 flexible transparent substrate, 2 normal light waveguide-layers, 3 electrochromism light waveguide-layers, 4 conductive electrodes.
Fig. 3 is 1 electrochromism optical waveguiding region amorphous-nano-crystalline composite construction indium tin niobium gallium oxide film of embodiment
X ray diffracting spectrum.
The X of 1 amorphous-nano-crystalline composite construction graphene of Fig. 4 embodiments doping indium gallium zinc oxide transparent conductive film is penetrated
Ray diffraction diagram is composed.
Embodiment
With reference to embodiment, the utility model is described in further detail, but the utility model is not limited to following implementation
Example.
Embodiment 1
A kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device, including flexible substrate, conductive electrode layer,
Light waveguide-layer and coating, it is characterised in that:Flexible transparent substrate is PET or PDMS, and conductive electrode layer is metal nanoparticle
Layer or graphene film layer, light waveguide-layer are divided into normal optical waveguiding region and electrochromism optical waveguiding region, its structure diagram
Fig. 1 and Fig. 2 are seen respectively；Normal light waveguide-layer is that the layer of amorphous-nano-crystalline state graphene doping is (In2O3)x(ZnO)y
(Ga2O3)zThin-film material, electrochromism optical waveguiding region material are amorphous-nanocomposite structures (ITO)x(Nb2O5)y
(Ga2O3)zThin-film material.
Specific embodiment comprises the following steps：
Step 1, spare 0.5 gram of graphene nanometer sheet is taken to be mixed with 2ml ethanol, ultrasonic disperse is suspended dispersed liquid.Soft
Property transparent substrates substrate on spin coating S1813 photoresists, utilize maskless direct-write photoetching system prepare planar structure, spin coating graphene
Dispersion liquid, removes photoresist, graphene conductive micro-nano structure is obtained, as conductive electrode.
Step 2, the spin coating S1813 photoresists on the substrate obtained by step 1, utilize maskless direct write light
Etching system prepares planar structure, and the nanocrystalline dispersion liquid of spin coating tin indium oxide gallium niobium, removes photoresist, obtain
The end of flexible electrical mutagens coloured light thin film waveguide layer, flexible electrical mutagens coloured light thin film waveguide layer and two conductive electrodes
Point partially overlaps；Specifically include as follows：
(1), by 2.633 grams of inidum chloride (InCl3), 0.354 gram of butter of tin (SnCl4), 2.432 grams of columbium pentachlorides
(NbCl5) and 0.176 gram of gallium trichloride (GaCl3) 3ml ammonium hydroxide is added in mixed aqueous solution, it is about 9 to adjust pH value so that sun from
Son is fully converted to hydroxide precipitation；
(2), cleaned repeatedly 4 times with deionized water, alcoholic solvent respectively, mixed hydroxides precipitation, separation of solid and liquid obtains hydrogen
Oxide precursor；
(3), presoma is mixed with 20ml ethanol, adds 10ml monoethanolamines, ultrasonic disperse puts suspension into suspension
Enter in autoclave and be heat-treated, obtain the nanocrystalline dispersion liquid of tin indium oxide gallium niobium, carry out spin coating and prepare amorphous-nano-crystalline composite construction
Flexible electrical mutagens coloured light thin film waveguide layer.
Step 3, flexible electrical mutagens coloured light thin film waveguide layer side prepares the normal light wave of Y types in the substrate obtained by step 2
Conducting shell, specifically includes as follows：
(1) when taking 0.2ml ultrasounds 0.5 small 2g/ml graphene oxide water solutions, hydrazine hydrate 0.3ml, 85 DEG C of water are added
Graphene nanometer sheet is reduced into when heating 1 is small in bath, after heating reduction reaction, adds ammonium hydroxide cleaning hydrazine hydrate, then use deionization
Water, which is centrifuged repeatedly, is washed till neutral aqueous solution, and ultrasound is broken up and to be heated to graphene nano powder spare.
(2), by 5.865 grams of InCl3, 0.548 gram of Zn (OAC)2, 0.44 gram of GaCl3High purity reagent be dissolved in 10ml second two
In alcoholic solution, 50 DEG C of heating stirrings to colourless transparent solution；
(3), graphene nanometer sheet powder is mixed with indium gallium zinc oxygen solution, colourless transparent solution is ultrasonic in 30 DEG C of water-baths
Heating stirring is to sol form；
(4), the spin coating under 3000 revs/min of rotating speed in spin coating instrument by vitreosol, anneals 45 minutes at 100 DEG C, instead
It is 8 times multiple, remove photoresist (removing photoresist after annealing repeatedly), two branch waveguide structure of Symmetric Y type is made in substrate
Normal optical waveguiding region.Normal optical waveguide film thickness is in 1500nm-3000nm, refractive index of the film to 1550nm laser
For 2.4.
A kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device provided by the utility model and its preparation side
Method, changes molecular structure based on element doping and functional performance has an important influence on, indium (In) element doping has production
There is molecule to keep non crystalline structure effect for raw crystalline state nanometer and near infrared region light transmittance castering action, gallium (Ga) element doping,
Zinc (Zn) element doping keeps nanocrystalline micro-nano covalent structure, and niobium (Nb) element doping has electrochromic property, so that device
Part has Visible-to-Near InfaRed band of light under the conditions of flexible bending flexible tunable optical branch-waveguide characteristic.
Claims (6)
1. a kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device, it is characterised in that served as a contrast including flexible and transparent
Bottom, conductive electrode, normal light waveguide-layer, electrochromism light waveguide-layer, in the upper surface of flexible transparent substrate, tiling has normal light
Ducting layer, electrochromism light waveguide-layer, at one layer, normal light waveguide-layer uses Y for normal light waveguide-layer, electrochromism light waveguide-layer
Two branched structure of type, i.e., the B strips and C strips after A strips, branch before branch, the A bars before normal light waveguide-layer y-branch
A side and electrochromism light waveguide-layer a side of shape are closely coupled；Electrochromism light waveguide-layer also leads to conductive electrode,
Conductive electrode overlaps with electrochromism light waveguide-layer, and conductive electrode is used for electrochromism light waveguide-layer on-load voltage
Effect, conductive electrode tiling are fixed in flexible transparent substrate；Conductive electrode and normal light waveguide-layer are without directly contacting.
2. a kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device described in accordance with the claim 1, its feature exist
In flexible transparent substrate is PET or PDMS.
3. a kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device described in accordance with the claim 1, its feature exist
In conductive electrode uses layer structure, is metal nano-particle layer or graphene film layer.
4. a kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device described in accordance with the claim 1, its feature exist
In normal light waveguide-layer is the transparent semiconductor film material of amorphous-nano-crystalline composite construction, and electrochromism light waveguide-layer material is excellent
Select amorphous-nano-crystalline compound structure film material.
5. a kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device described in accordance with the claim 1, its feature exist
Overlap part in, conductive electrode and electrochromism light waveguide-layer, conductive electrode is located at flexible transparent substrate and electroluminescent change
Between coloured light ducting layer.
6. a kind of flexible tunable Visible-to-Near InfaRed bands branch fiber waveguide device described in accordance with the claim 1, its feature exist
In electrochromism light waveguide-layer is elongate configuration, electrochromism light waveguide-layer elongate configuration long side and normal light waveguide-layer Y types point
The long side lengths for the A strips supported the front are identical, and closely connect, and the symmetry axis of the long side and two branched structure of Y types of A strips is put down
OK.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107608156A (en) * | 2017-08-25 | 2018-01-19 | 北京工业大学 | A kind of flexible tunable visible near-infrared bands branch fiber waveguide device and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107608156A (en) * | 2017-08-25 | 2018-01-19 | 北京工业大学 | A kind of flexible tunable visible near-infrared bands branch fiber waveguide device and preparation method thereof |
| CN107608156B (en) * | 2017-08-25 | 2023-12-29 | 北京工业大学 | Flexible tunable visible-near infrared band branch optical waveguide device and preparation method thereof |
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Inventor after: Su Xueqiong Inventor after: Qiu Ju Inventor after: Cui Libin Inventor after: Zhao Yishuo Inventor after: Han Xiaodong Inventor after: Liu Yucai Inventor after: Qi Yongping Inventor after: Tian Zhaoyuan Inventor after: Zhao Mingyang Inventor before: Su Xueqiong Inventor before: Qiu Ju Inventor before: Cui Libin Inventor before: Zhao Yishuo Inventor before: Han Xiaodong Inventor before: Liu Yongcai Inventor before: Qi Yongping Inventor before: Tian Zhaoyuan Inventor before: Zhao Mingyang |