CN207336625U - Parallel IGBT peak value over-current detection circuit - Google Patents
Parallel IGBT peak value over-current detection circuit Download PDFInfo
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- CN207336625U CN207336625U CN201721100605.3U CN201721100605U CN207336625U CN 207336625 U CN207336625 U CN 207336625U CN 201721100605 U CN201721100605 U CN 201721100605U CN 207336625 U CN207336625 U CN 207336625U
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Abstract
The utility model provides a kind of parallel IGBT peak value over-current detection circuit, including an over-current detection unit, a detection signal processing unit and multiple detection signal gathering units；Wherein：The input terminal of the multiple detection signal gathering unit is connected respectively to the over-current detection pin of multiple insulated gate bipolar transistor IGBTs in parallel, and the output terminal of the multiple detection signal gathering unit is connected to the input terminal of the over-current detection unit via the detection signal processing unit respectively.The over-current detection leg signal of multiple IGBT in parallel is connected to same over-current detection unit by the utility model by multiple detection signal gathering units, not only escapable cost, reduction volume, but also be easier to connect up.
Description
Technical field
Overcurrent protection field is the utility model is related to, is examined more specifically to a kind of parallel IGBT peak value overcurrent
Slowdown monitoring circuit.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is by BJT
(Bipolar Junction Transistor, double pole triode) and MOS (metal oxide semiconductor, absolutely
Edge grid-type field-effect tube) composition compound full-control type voltage driven type power semiconductor, it has MOSFET (Metal- concurrently
Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor field-effect transistor)
Advantage of both the low conduction voltage drop of high input impedance and GTR (Giant Transistor, power transistor), is very suitable for
It is 600V and the converter system of the above applied to DC voltage, such as alternating current generator, frequency converter, Switching Power Supply, lighting circuit, traction
The fields such as transmission.
In IGBT occasions used in parallel, the over-current signal on each IGBT integration slices is required for individually detecting signal
Collecting unit carries out over-current detection, i.e., each one over-current detection unit of IGBT connections simultaneously passes through over-current detection unit judgement pair
The IGBT answered whether overcurrent.
The above-mentioned scheme by one over-current detection unit of each IGBT connections, not only cost is higher, but also volume is big, especially
When being that parallel IGBT is more.
Utility model content
The technical problems to be solved in the utility model is, for above-mentioned insulated gate bipolar transistor IGBT over-current detection
A kind of of high cost, bulky problem, there is provided parallel IGBT peak value over-current detection circuit.
The technical solution that the utility model solves above-mentioned technical problem is to provide a kind of parallel IGBT peak value over-current detection electricity
Road, including an over-current detection unit, a detection signal processing unit and multiple detection signal gathering units；Wherein：Institute
The input terminal for stating multiple detection signal gathering units is connected respectively to the mistake of multiple insulated gate bipolar transistor IGBTs in parallel
Stream detection pin, and the output terminal of the multiple detection signal gathering unit is respectively via the detection signal processing unit connection
To the input terminal of the over-current detection unit.
It is described to detect the defeated of signal processing unit in parallel IGBT peak value over-current detection circuit described in the utility model
Entering end includes the first terminal and Second terminal；Each detection signal gathering unit includes unidirectional module and Voltage stabilizing module；
Over-current detection pin, the output terminal that the input terminal of the unidirectional module is connected to IGBT are connected to the detection signal processing unit
The first terminal, and the output current of the over-current detection pin of the IGBT is unidirectionally flowed into the detection signal processing unit
The first terminal；The both ends of the Voltage stabilizing module are connected respectively at the over-current detection pin and the detection signal of the IGBT
Manage the Second terminal of unit.
In parallel IGBT peak value over-current detection circuit described in the utility model, the unidirectional module includes diode,
And input terminal, the output terminal of the cathode connection unidirectional module of the anode connection unidirectional module of the diode.
In parallel IGBT peak value over-current detection circuit described in the utility model, the Voltage stabilizing module includes the first electricity
Resistance.
In parallel IGBT peak value over-current detection circuit described in the utility model, the unidirectional module further includes the second electricity
Resistance, and the second resistance and the Diode series are connected between the input terminal and output terminal of the unidirectional module.
In parallel IGBT peak value over-current detection circuit described in the utility model, the detection signal processing unit includes
3rd resistor and the filter capacitor being connected in parallel with the 3rd resistor, and the both ends of the 3rd resistor are connected respectively to institute
The first terminal and Second terminal of the input terminal of detection signal processing unit are stated, the both ends of the filter capacitor are connected respectively to institute
State two pins of the input terminal of over-current detection unit.
In parallel IGBT peak value over-current detection circuit described in the utility model, the detection signal processing unit also wraps
Include the 4th resistance, and the 3rd resistor and the 4th resistance are connected in series in the of the input terminal of the detection signal processing unit
Between one terminal and Second terminal.
In parallel IGBT peak value over-current detection circuit described in the utility model, the detection signal processing unit includes
Slide rheostat and filter capacitor, and two fixing terminals of the slide rheostat are connected respectively at the detection signal
The first terminal and Second terminal of the input terminal of unit are managed, the both ends of the filter capacitor are connected respectively to the over-current detection list
The input terminal of member, and the first end of the filter capacitor is also connected with the slide head of the slide rheostat, the filter capacitor
Second end is also connected with the Second terminal of the input terminal of the detection signal processing unit.
It is described to detect the defeated of signal processing unit in parallel IGBT peak value over-current detection circuit described in the utility model
Enter the Second terminal ground connection at end.
It is described to detect the defeated of signal processing unit in parallel IGBT peak value over-current detection circuit described in the utility model
Enter the Second terminal at end via the 5th resistance eutral grounding.
The parallel IGBT peak value over-current detection circuit of the utility model has the advantages that：Pass through multiple detection signals
Collecting unit gathers the over-current detection leg signal of multiple IGBT in parallel, and the multiple of collection are signally attached to same mistake
Detection unit is flowed, not only escapable cost, reduction volume, but also be easier to connect up.
Brief description of the drawings
Fig. 1 is the schematic diagram of the utility model parallel IGBT peak value over-current detection circuit embodiment；
Fig. 2 is the circuit diagram of the utility model parallel IGBT peak value over-current detection circuit embodiment；
Fig. 3 is the embodiment of unidirectional modular belt second resistance in the utility model parallel IGBT peak value over-current detection circuit
Circuit diagram；
Fig. 4 is to detect signal processing form unit in the utility model parallel IGBT peak value over-current detection circuit using slip to become
Hinder the circuit diagram of the embodiment of device partial pressure；
Fig. 5 is the of the input terminal that signal processing unit is detected in the utility model parallel IGBT peak value over-current detection circuit
The circuit diagram of the embodiment of two-terminal ground connection；
Fig. 6 is the of the input terminal that signal processing unit is detected in the utility model parallel IGBT peak value over-current detection circuit
Two-terminal via the embodiment of the 5th resistance eutral grounding circuit diagram.
Embodiment
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
Example, is further elaborated the utility model.It should be appreciated that specific embodiment described herein is only explaining
The utility model, is not used to limit the utility model.
As shown in Figure 1, it is the utility model parallel IGBT (Insulated Gate Bipolar Transistor, insulation
Grid bipolar transistor) peak value over-current detection circuit embodiment schematic diagram, which can use
IGBT over-current detections in multiple parallel IGBT occasions.Parallel IGBT peak value over-current detection circuit in the present embodiment includes one
A 11, detection signal processing units 12 of over-current detection unit and multiple detection signal gathering units 13；Wherein：Multiple inspections
The input terminal for surveying signal gathering unit 13 is connected respectively to the over-current detection pin of multiple IGBT, and the plurality of detection signal acquisition
The output terminal of unit 13 is connected to the input terminal of over-current detection unit 11 via detection signal processing unit 12 respectively.
Above-mentioned multiple detection signal gathering units 13 gather the electric current letter of the over-current detection pin of different IGBT 20 respectively
Number, and above-mentioned current signal is converted into voltage signal by detection signal processing unit 12 and carries out the operations such as corresponding filtering.
The input terminal of over-current detection unit 11 is connected to the output terminal of detection signal processing unit 12, and in detection signal processing unit 12
Output voltage exceed pre-set peak value, then it is assumed that there are the phenomenon of peak value overcurrent in the parallel IGBT, and protected accordingly
Processing.
Above-mentioned parallel IGBT peak value over-current detection circuit is sent to one by the way that the over-current signal of each parallel IGBT is integrated
Over-current detection unit 11 is, it can be achieved that low cost, efficient protection.
The input terminal of above-mentioned detection signal processing unit 12 includes the first terminal and Second terminal.Each detection signal acquisition
Unit 13 includes unidirectional module and Voltage stabilizing module, wherein the over-current detection that the input terminal of unidirectional module is connected to IGBT 20 is drawn
Foot, output terminal are connected to the first terminal of detection signal processing unit 12, and make the output electricity of the over-current detection pin of IGBT 20
The unidirectional the first terminal for flowing into detection signal processing unit 12 of stream；The both ends of Voltage stabilizing module are connected respectively to the overcurrent of IGBT 20
Detection pin and the Second terminal for being connected to detection signal processing unit 12.Multiple detection signal gathering units 13 are in parallel even
Connect.
As shown in Fig. 2, above-mentioned unidirectional module includes diode D, and the anode of diode D connects the input of unidirectional module
The output terminal that end (the over-current detection pin for being attached to corresponding IGBT 20), cathode connect unidirectional module (is attached to detection letter
The first terminal of number processing unit 12).And Voltage stabilizing module then includes first resistor R1, and the both ends of first resistor R1 connect respectively
Connect the over-current detection pin of corresponding IGBT 20 and detect the first terminal of signal processing unit 12.Wherein, first resistor R1 is steady
Piezoresistance.
As shown in figure 3, electric current in above-mentioned diode D is excessive, and unidirectional module may also include a second resistance R2 to avoid,
And second resistance R2 and diode D are connected in series between the input terminal and output terminal of unidirectional module.Wherein, second resistance R2
For current-limiting resistance.
Certainly, in practical applications, above-mentioned unidirectional module and Voltage stabilizing module can also use other circuit topologies, as long as can be real
Now corresponding Signals collecting function.
Detection signal processing unit 12 includes 3rd resistor RbAnd with 3rd resistor RbThe filter capacitor C being connected in parallel, and
3rd resistor RbBoth ends be connected respectively to detection signal processing unit 12 input terminal the first terminal VbAnd Second terminal, filter
The both ends of ripple capacitance C are connected respectively to the OCP pins and OCN pins of the input terminal of over-current detection unit 11.Over-current detection unit
The voltage difference of 11 couples of OCP and OCN carries out overcurrent judgement and protection, if above-mentioned voltage difference exceedes pre-set peak value, then it is assumed that the parallel connection
There are the phenomenon of peak value overcurrent in IGBT 20, and carry out corresponding protection processing.
Above-mentioned detection signal processing unit 12 may also include the 4th resistance Ra, and 3rd resistor RbWith the 4th resistance RaSeries connection
It is connected between the first terminal and the Second terminal of the input terminal of detection signal processing unit 12.Pass through the 4th resistance Ra, can make
The input voltage of over-current detection unit 11 is obtained in safe range.
In practical applications, the 3rd resistor R of above-mentioned series connectionbWith the 4th resistance RaIt can be replaced with a slide rheostat Rx,
As shown in Figure 4.Two fixing terminals A, B of slide rheostat Rx are connected respectively to the input terminal of detection signal processing unit 11
The first terminal and Second terminal, the both ends of filter capacitor C be then connected respectively to the input terminal of over-current detection unit 11, and filter
The first end of capacitance C is also connected with the slide head P of slide rheostat Rx, the second end of filter capacitor C is also connected with detection signal processing
The Second terminal of the input terminal of unit 12.
As shown in figure 5, the Second terminal of the input terminal of above-mentioned detection signal processing unit 12 can connect reference ground, that is, detect
The Second terminal of the input terminal of signal processing unit 12 and the OCN pins ground connection of over-current detection unit 11, so as to simplify overcurrent inspection
Survey the processing of unit 11.
In addition, as shown in fig. 6, the Second terminal of the input terminal of above-mentioned detection signal processing unit 12 can also be via one
Five resistance RcGround connection, to ensure above-mentioned Second terminal safety ground.
The above, is only the preferable embodiment of the utility model, but the scope of protection of the utility model is not
This is confined to, any one skilled in the art can readily occur in the technical scope that the utility model discloses
Change or replacement, should be covered within the scope of the utility model.Therefore, the scope of protection of the utility model should
It is subject to scope of the claims.
Claims (10)
1. a kind of parallel IGBT peak value over-current detection circuit, it is characterised in that including an over-current detection unit, a detection letter
Number processing unit and multiple detection signal gathering units；Wherein：The input terminal difference of the multiple detection signal gathering unit
It is connected to the over-current detection pin of multiple insulated gate bipolar transistor IGBTs in parallel, and the multiple detection signal acquisition list
The output terminal of member is connected to the input terminal of the over-current detection unit via the detection signal processing unit respectively.
2. parallel IGBT peak value over-current detection circuit according to claim 1, it is characterised in that：The detection signal processing
The input terminal of unit includes the first terminal and Second terminal；Each detection signal gathering unit is including unidirectional module and surely
Die block；Over-current detection pin, the output terminal that the input terminal of the unidirectional module is connected to the IGBT are connected to the detection
The first terminal of signal processing unit, and the output current of the over-current detection pin of the IGBT is unidirectionally flowed into the detection letter
The first terminal of number processing unit；The both ends of the Voltage stabilizing module are connected respectively to over-current detection pin and the institute of the IGBT
State the Second terminal of detection signal processing unit.
3. parallel IGBT peak value over-current detection circuit according to claim 2, it is characterised in that：The unidirectional module includes
Diode, and the output of the input terminal, the cathode connection unidirectional module of the anode connection unidirectional module of the diode
End.
4. parallel IGBT peak value over-current detection circuit according to claim 2, it is characterised in that：The Voltage stabilizing module includes
First resistor.
5. parallel IGBT peak value over-current detection circuit according to claim 3, it is characterised in that：The unidirectional module is also wrapped
Include second resistance, and the second resistance and the Diode series be connected to the unidirectional module input terminal and output terminal it
Between.
6. parallel IGBT peak value over-current detection circuit according to claim 1, it is characterised in that：The detection signal processing
Unit includes 3rd resistor and the filter capacitor being connected in parallel with the 3rd resistor, and the both ends difference of the 3rd resistor
It is connected to the first terminal and Second terminal of the input terminal of the detection signal processing unit, the both ends difference of the filter capacitor
It is connected to two pins of the input terminal of the over-current detection unit.
7. parallel IGBT peak value over-current detection circuit according to claim 6, it is characterised in that：The detection signal processing
Unit further includes the 4th resistance, and the 3rd resistor and the 4th resistance are connected in series in the defeated of the detection signal processing unit
Enter between the first terminal at end and Second terminal.
8. parallel IGBT peak value over-current detection circuit according to claim 1, it is characterised in that：The detection signal processing
Unit includes slide rheostat and filter capacitor, and two fixing terminals of the slide rheostat are connected respectively to the inspection
The first terminal and Second terminal of the input terminal of signal processing unit are surveyed, the both ends of the filter capacitor are connected respectively to the mistake
The input terminal of detection unit is flowed, and the first end of the filter capacitor is also connected with the slide head of the slide rheostat, the filter
The second end of ripple capacitance is also connected with the Second terminal of the input terminal of the detection signal processing unit.
9. the parallel IGBT peak value over-current detection circuit according to any one of claim 6-8, it is characterised in that：The inspection
Survey the Second terminal ground connection of the input terminal of signal processing unit.
10. the parallel IGBT peak value over-current detection circuit according to any one of claim 6-8, it is characterised in that：It is described
The Second terminal of the input terminal of signal processing unit is detected via the 5th resistance eutral grounding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721100605.3U CN207336625U (en) | 2017-08-30 | 2017-08-30 | Parallel IGBT peak value over-current detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721100605.3U CN207336625U (en) | 2017-08-30 | 2017-08-30 | Parallel IGBT peak value over-current detection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207336625U true CN207336625U (en) | 2018-05-08 |
Family
ID=62370839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721100605.3U Active CN207336625U (en) | 2017-08-30 | 2017-08-30 | Parallel IGBT peak value over-current detection circuit |
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| Country | Link |
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| CN (1) | CN207336625U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110277900A (en) * | 2019-06-24 | 2019-09-24 | 深圳市四方电气技术有限公司 | IGBT drives peak detection to protect circuit |
-
2017
- 2017-08-30 CN CN201721100605.3U patent/CN207336625U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110277900A (en) * | 2019-06-24 | 2019-09-24 | 深圳市四方电气技术有限公司 | IGBT drives peak detection to protect circuit |
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Legal Events
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|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 215000 52 tianedang Road, Yuexi, Wuzhong District, Suzhou City, Jiangsu Province Patentee after: Suzhou Huichuan United Power System Co.,Ltd. Address before: 215000 52 tianedang Road, Yuexi Town, Wuzhong District, Suzhou City, Jiangsu Province Patentee before: SUZHOU HUICHUAN UNITED POWER SYSTEM Co.,Ltd. |
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| CP03 | Change of name, title or address |