CN2073168U - Ion sensitive field effect device protection device - Google Patents
Ion sensitive field effect device protection device Download PDFInfo
- Publication number
- CN2073168U CN2073168U CN 89220420 CN89220420U CN2073168U CN 2073168 U CN2073168 U CN 2073168U CN 89220420 CN89220420 CN 89220420 CN 89220420 U CN89220420 U CN 89220420U CN 2073168 U CN2073168 U CN 2073168U
- Authority
- CN
- China
- Prior art keywords
- field effect
- ion sensitive
- sensitive field
- effect device
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 33
- 239000012085 test solution Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 4
- 230000001681 protective effect Effects 0.000 claims description 19
- 230000002441 reversible effect Effects 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000011056 performance test Methods 0.000 claims 1
- 230000001012 protector Effects 0.000 abstract description 4
- 238000007599 discharging Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 29
- 230000015556 catabolic process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 239000000523 sample Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
A protection device suitable for ion sensitive field effect devices.
The protector consists of one circuit with over-voltage current-discharging capacity and features that it consists of one protecting electrode and one set of diodes in opposite directions, and the protector has one end connected to the test solution and the other end connected to the source, drain or base of the ion sensitive field effect device. After the ion sensitive field effect device is additionally provided with the protection device, the high voltage generated on the insulated gate of the ion sensitive field effect device due to the electrostatic action can be inhibited in the using process of the device, so that the ion sensitive field effect device is effectively protected, the stability and the reliability of the device are improved, and the service life of the device is prolonged.
Description
The present invention relates to a kind of chemical sensor, particularly a kind of protective device of ion sensitive field effect device.
The ion sensitive field effect device is a kind of solid state chemistry transducer that is used to measure effects of ion activity, has the function that certain particular solution intermediate ion activity is converted to certain electromotive force.
Based on various ion sensitive field effect devices, develop and a series of chemical sensors that are applicable to different ions, be applied to scientific researches such as chemical industry, medical science or branch of industry transducer as analysis to measure and instrument for automatic control system.
In practical process, because a lot of accidentalia of surrounding environment produce static, can make ion sensitive field effect device isolation grid both sides form electric field, because the insulated gate layer is quite thin, generally only 1000
About, so both made not really high electrostatic pressure, also can form very strong electric field, under this highfield effect, not only the threshold voltage of ion sensing device will be disturbed, even may make the ion sensing device be subjected to irreversible punch through damage, influence stability, reliability and the useful life of ion sensing device.
The objective of the invention is: a kind of protective device of ion sensitive field effect device is provided, the ion sensitive field effect device is no longer produced stability and the useful life that the formed high electric field strength of static influences device because of accidental.
Another object of the present invention is: provide a kind of can with the microelectric technique compatibility, the ion sensitive field effect apparatus protective device is so that integrated ion sensitive field effect device also can be protected.
For achieving the above object, the measure that the present invention takes is: use a kind of protective device with overvoltage discharge capacity, this protective device is made of guard electrode and one group of reverse each other diode.One end of protective device communicates with test solution by guard electrode, and the source electrode of the other end and ion sensitive field effect device or drain electrode or base stage link to each other.Elements such as the used electrode of this protective device, lead, diode both can have been assembled by discrete component, also can be made of integrated component; One group of reverse each other diode that protective device is used, at least comprise a pair of reverse each other diode, two diode polarity are relative, are together in series, this group diode requires to have certain reverse withstand voltage and forward current admittance ability, requires reverse leakage enough little simultaneously; Protective device electrode used therein shape is not limit, and the used material of guard electrode should be selected tested test solution is not polluted, and does not have corrosion, and chemical stability preferred metal or other electric conducting material are as platinum, gold, stainless steel etc.
Description of drawings, Fig. 1 are to adopt the hydrogen ion sensitive fieldtron of protective device to carry out the schematic diagram that the test solution pH value is measured.Fig. 2 adopts protector measuring pH value hydrogen ion sensitive combined probe.Embodiments of the invention are described with reference to the accompanying drawings.
Among the figure 1 is for measuring the reference electrode that pH value is asked to be needed; 2 is that tested liquid is called for short test solution; 3; 5,7 are respectively drain electrode, base stage, the source electrode of ion sensitive field effect device, and 4 is the substrate of ion sensitive field effect device; 6 is the insulated gate layer to the hydrogen ion sensitivity; 8,9 is reverse each other diode, and 10 is special guard electrode, and 11 is the combined probe matrix.
When external electrostatic high-pressure is added to test solution; if do not add protective device; then high voltage directly affacts on the ion sensitive field effect device isolation grid 6; form highfield in insulated gate layer both sides, device threshold voltage is disturbed, make the device job insecurity; influence the reliability of device stability and test; heavy then the insulated gate dielectric layer is punctured, cause nonvolatil damage, reduce the useful life of ion sensing device.
After adopting ion sensitive field effect apparatus protective device of the present invention, when external forward electrostatic high-pressure is added to test solution, high voltage is by guard electrode 10, be the diode 9 of conducting by being in again to the forward high pressure, pass to and be in reverse diode 8, as long as but add the reverse breakdown voltage that forward electrostatic pressure numerical value surpasses diode 8, diode 8 just is in the operating state of reverse breakdown conducting, so provide one with in parallel by ion sensitive field effect device isolation grid to external forward electrostatic high-pressure, and ion sensitive field effect device path is the electric current leakage path of a low-resistance relatively, make magnitude of voltage be limited in the breakdown voltage value of backward diode 8, so, as long as select suitable diode breakdown voltage, just can play effective protection to the ion sensitive field effect device; When meeting negative high-pressure electrostatic and be added to test solution; it is the state of conducting that diode 8 is in negative high voltage; and diode 9 is in reverse breakdown; when external negative electrostatic potential surpasses the reverse breakdown voltage of diode 9; diode 9 reverse-conductings; the electric current leakage path of a low-resistance is provided equally; obviously realized overvoltage earial drainage defencive function by guard electrode 10 and diode 8,9 to the ion sensitive field effect device; and the magnitude of voltage that is limited; can adjust by the reverse breakdown voltage value of selecting diode 8,9.
In normal working conditions, ion sensitive field effect device isolation grid 61 volt of the voltage signal less than of bearing, insulated gate 6 can not suffer damage.And in normal working conditions, the guard electrode in the protective device is the material for tested liquefaction good stability, does not influence normal measurement; Diode 8 in the protective device; always there is one to be to be in oppositely in 9; as long as signal voltage is no more than diode 8; 9 reverse breakdown voltage; then diode 8; always have one to be in cut-off state and can not to conduct electricity in 9, the circuit that this and ion sensitive field effect device are in parallel is inoperative fully, thereby also can not influence the measuring accuracy of ion sensitive field effect device as chemical sensor.
Certainly; if diode 8 in the protective circuit; which is in when reverse in 9; reverse leakage current is big; then quite to the ion sensitive field effect device of operate as normal; it is to influence measuring accuracy that leak channel in parallel is provided, and the reverse leakage of historical facts or anecdotes border application choice diode 8,9 requires little of ignoring to used condition.
Claims (3)
1, a kind of protective device of ion sensitive field effect device; it is characterized in that: constitute by guard electrode and one group of reverse each other diode; one end of protective device communicates with test solution by guard electrode, and an end links to each other with source electrode, drain electrode or the base stage of ion sensitive field effect device.
2, according to the protective device of the described ion sensitive field effect device of claim 1; it is characterized by: guard electrode and one group of reverse each other diode; can assemble by discrete component, can adopt integrated circuit processing technique and the manufacturing of ion sensitive field effect device to coexist on the chip again.
3, according to the protective device of the described ion sensitive field effect device of claim 1, it is characterized by: the shape of guard electrode is not limit and the material of guard electrode should not polluted, choose metal, alloy or other electric conducting material of no burn into stable chemical performance test solution from platinum, gold, stainless steel or other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 89220420 CN2073168U (en) | 1989-12-05 | 1989-12-05 | Ion sensitive field effect device protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 89220420 CN2073168U (en) | 1989-12-05 | 1989-12-05 | Ion sensitive field effect device protection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2073168U true CN2073168U (en) | 1991-03-13 |
Family
ID=4875104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 89220420 Withdrawn CN2073168U (en) | 1989-12-05 | 1989-12-05 | Ion sensitive field effect device protection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2073168U (en) |
-
1989
- 1989-12-05 CN CN 89220420 patent/CN2073168U/en not_active Withdrawn
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |