CN207303093U - Display base plate and display device - Google Patents
Display base plate and display device Download PDFInfo
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- CN207303093U CN207303093U CN201721143201.2U CN201721143201U CN207303093U CN 207303093 U CN207303093 U CN 207303093U CN 201721143201 U CN201721143201 U CN 201721143201U CN 207303093 U CN207303093 U CN 207303093U
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Abstract
The utility model discloses a kind of display base plate and display device.The display base plate includes：Underlay substrate and first electrode and second electrode on the underlay substrate, the second electrode is located at the side of the remote underlay substrate of the first electrode, pixel defining layer and light emitting functional layer are provided between first electrode and the second electrode, the pixel defining layer limits pixel region, the pixel region correspondence position is provided with sunk structure, the light emitting functional layer is located in the pixel region, and the structure of the close underlay substrate side of the light emitting functional layer is located in the sunk structure.The structure of the close underlay substrate side of light emitting functional layer is located in sunk structure in the utility model so that the thickness of light emitting functional layer is uniform, the problem of avoiding light emitting functional layer non-uniform light, so as to improve the luminescent properties of OLED device.
Description
Technical field
Display technology field is the utility model is related to, more particularly to a kind of display base plate and display device.
Background technology
Set in Organic Light Emitting Diode (Organic Light-Emitting Diode, abbreviation OLED) display panel
There is pixel defining layer (Pixel Defining Layer, abbreviation PDL), PDL limits pixel region, is provided with pixel region
Light emitting functional layer.During PDL is formed, acrylic/PI materials in PDL materials, which are deposited on, is formed below PDL lower floors knot
Structure, and the fluorine resin material in PDL materials then floats up to surface and forms PDL superstructures.The material of PDL understructures is
It is hydrophilic, and the material of PDL superstructures is hydrophobic.
Light emitting functional layer may include hole injection layer, hole transmission layer, electroluminescence layer, the electron transfer layer set gradually
And electron injecting layer.By taking hole injection layer as an example, since the material of hole injection layer is also hydrophilic, in subsequent sky
In the deposition process of cave implanted layer, infiltration phenomenon can occur for hole injection layer and the side of PDL understructures, and hole injection layer exists
It can be climbed upwards along the side of PDL understructures under immersional wetting, until reaching PDL understructures and PDL superstructures
Untill interface.This make it that the shape of hole injection layer is bent, and causes the uneven thickness of hole injection layer.Similarly, remaining
There is also the problem of uneven thickness for each light emitting functional layer.
To sum up, the uneven thickness of light emitting functional layer, causes the non-uniform light of light emitting functional layer, so as to cause inside pixel
Luminous uneven (mainly pixel edge region non-uniform light), and then influence the luminescent properties of OLED device.
Utility model content
The utility model provides a kind of display base plate and display device, for avoiding asking for light emitting functional layer non-uniform light
Topic, so as to improve the luminescent properties of OLED device.
To achieve the above object, the utility model provides a kind of display base plate, including：Underlay substrate and positioned at the lining
First electrode and second electrode on substrate, the second electrode are located at the remote underlay substrate of the first electrode
Side, is provided with pixel defining layer and light emitting functional layer, the pixel defining layer limit between first electrode and the second electrode
Pixel region is made, the pixel region correspondence position is provided with sunk structure, the light emitting functional layer is located at the pixel
In region, the structure of the close underlay substrate side of the light emitting functional layer is located in the sunk structure.
Alternatively, insulating layer is further included, the insulating layer is located at the one of the close underlay substrate of the first electrode
Side；
The sunk structure is being located at the insulating layer with the pixel region correspondence position.
Alternatively, the depth in the centre position of the sunk structure is more than the depth of marginal position.
Alternatively, the surface of the sunk structure is cambered surface.
Alternatively, the light emitting functional layer includes more sub- light emitting functional layers, is set close to the first electrode described
The structure of the close underlay substrate side of sub- light emitting functional layer is located in the sunk structure.
Alternatively, the multiple sub- light emitting functional layer is respectively the hole injection layer, hole transmission layer, electroluminescent set gradually
Luminescent layer, electron transfer layer and electron injecting layer, the hole injection layer are set close to the first electrode, the hole injection
The part-structure of the close underlay substrate side of layer is located in the sunk structure.
Alternatively, the difference range of the thickness of each position of the sub- light emitting functional layer is 0nm to 100nm.
Alternatively, the thickness of each position of the sub- light emitting functional layer is identical.
To achieve the above object, the utility model provides a kind of display device, including above-mentioned display base plate.
To achieve the above object, the utility model provides a kind of manufacture method of display base plate, including：
First electrode is formed on underlay substrate；
Pixel defining layer, the pixel defining layer limit are formed in the side of the remote underlay substrate of the first electrode
Pixel region is made, the pixel region correspondence position is provided with sunk structure；
Light emitting functional layer is formed in the pixel region, the close underlay substrate side of the light emitting functional layer
Part-structure is located in the sunk structure.
Alternatively, it is described to include on underlay substrate before formation first electrode：
Insulating layer is formed on the underlay substrate, the insulating layer is located at the close substrate of the first electrode
The side of substrate；
Form the sunk structure on the insulating layer, the sunk structure is being located at the insulating layer with the pixel
Region correspondence position.
Alternatively, it is described to be further included on underlay substrate before formation insulating layer：Formed on the underlay substrate
Thin film transistor (TFT), the insulating layer are located on the thin film transistor (TFT)；
It is described to be further included while sunk structure is formed on the insulating layer：Via, institute are formed on the insulating layer
First electrode is stated to connect with the thin film transistor (TFT) by the via.
The utility model has the advantages that：
In the technical solution of display base plate provided by the utility model and display device, the close substrate base of light emitting functional layer
The structure of plate side is located in sunk structure so that the thickness of light emitting functional layer is uniform, avoids light emitting functional layer luminance nonuniformity
The problem of even, so as to improve the luminescent properties of OLED device.
Brief description of the drawings
Fig. 1 is a kind of structure diagram for display base plate that the utility model embodiment one provides；
Fig. 2 is the schematic diagram of sunk structure in Fig. 1；
Fig. 3 is the schematic diagram of OLED device structure in embodiment one；
Fig. 4 is a kind of flow chart of the manufacture method for display base plate that the utility model embodiment three provides；
Fig. 5 a are the schematic diagram to form insulating layer；
Fig. 5 b are the schematic diagram being exposed to insulating layer；
Fig. 5 c are the schematic diagram to develop to the insulating layer after exposure.
Embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, below in conjunction with the accompanying drawings to this reality
It is described in detail with the display base plate and its manufacture method and display device of new offer.
Fig. 1 is a kind of structure diagram for display base plate that the utility model embodiment one provides, and Fig. 2 is to be recessed in Fig. 1
The schematic diagram of structure, as depicted in figs. 1 and 2, including：Underlay substrate and the electricity of first electrode 2 and second on underlay substrate
Pole, second electrode are located at the side of the remote underlay substrate of first electrode 2, picture are provided between first electrode 2 and second electrode
Element defines layer 3 and light emitting functional layer, and pixel defining layer 3 limits pixel region P, is provided with pixel region P correspondence positions recessed
Structure 4 is fallen into, light emitting functional layer is located in pixel region P, and the structure of the close underlay substrate side of light emitting functional layer is positioned at depression
In structure 4.It should be noted that：Underlay substrate and second electrode are not drawn specifically in fig. 1 and 2.
In the present embodiment, display base plate further includes insulating layer 1, and insulating layer 1 is located at the close underlay substrate of first electrode 2
Side, sunk structure 4 be located at insulating layer 1 with pixel region P correspondence positions.Specifically, first electrode 2 be located at insulating layer 1 it
On, insulating layer 1 is provided with sunk structure 4 corresponding with pixel region.
The material of insulating layer 1 is resin material.Preferably, the material of insulating layer 1 is organic photo resin material, this is organic
Photosensitive material can be the acrylic material or polyimide material mixed with photoactive.
Preferably, first electrode 2 is anode, and second electrode is cathode.
The depth in the centre position of sunk structure 4 is more than the depth of marginal position.As shown in Fig. 2, the centre of sunk structure 4
The depth of position is more than the depth of the marginal position of centrally located both sides.Preferably, the surface of sunk structure 4 is cambered surface.
In other words, local dent is formd on insulating layer 1, which is in concave arcuate structure, therefore the table of sunk structure 4 downwards
Face is cambered surface.Alternatively, in practical applications, the surface of the sunk structure 4 also for other shapes, no longer to arrange herein one by one
Lift.
Light emitting functional layer includes more sub- light emitting functional layers, the sub- light emitting functional layer set close to first electrode 2 it is close
The structure of underlay substrate side is located in sunk structure 4.In the present embodiment, more sub- light emitting functional layers are respectively what is set gradually
Hole injection layer (Hole Inject Layer, abbreviation HIL) 5, hole transmission layer (Hole Transport Layer, abbreviation
HTL), electroluminescence layer (Electroluminescence Layer, abbreviation EL), electron transfer layer (Electron
Transport Layer, abbreviation ETL) and electron injecting layer (Electron Inject Layer, abbreviation EIL), hole injection
Layer 5 is set close to first electrode 2, and 5 part of hole injection layer is located in sunk structure 4.In the present embodiment, first electrode 2, second
Electrode 2 and light emitting functional layer are collectively forming OLED device.Fig. 3 is the schematic diagram of OLED device structure in embodiment one, such as Fig. 3 institutes
Show, which includes first electrode, second electrode and the light emitting functional layer between first electrode and second electrode, its
In, hole injection layer is located on first electrode, and hole transmission layer is located on hole injection layer, and electroluminescence layer is located at hole
On transport layer, electron transfer layer is located on electroluminescence layer, and electron injecting layer is located on electron transfer layer, second electrode
On electron injecting layer.With reference to shown in Fig. 1 and Fig. 3, each sub- light emitting functional layer is between first electrode 2 and second electrode
Setting is arranged in order, since hole injection layer 5 is the sub- light emitting functional layer near the setting of first electrode 2, hole is injected
The structure of the close underlay substrate side of layer 5 is located in sunk structure 4.Meanwhile with the part first of 4 position correspondence of sunk structure
Electrode 2 also is located in sunk structure 4.Therefore, in the present embodiment, part first electrode 2 is provided with sunk structure 4 and part is empty
Cave implanted layer 5.The shape on the surface of the close first electrode 2 of the partial holes implanted layer 5 in sunk structure 4 is arc,
And the shape on the surface of the remote first electrode 2 of hole injection layer 5 is arc, so that the thickness of hole injection layer 5 is uniform.
Similarly, since its minor light emitting functional layer is located on hole injection layer 5, remote the first of its minor light emitting functional layer
The shape on the surface of electrode 2 is also arc, so that the thickness of its minor light emitting functional layer is uniform.
In the present embodiment, the difference range of the thickness of each position of sub- light emitting functional layer is 0nm to 100nm, so that
The thickness for obtaining hole injection layer 5 is uniform.Preferably, the thickness of each position of sub- light emitting functional layer is identical, at this time the luminous work(of son
The difference of the thickness of each position of ergosphere is 0nm, so that the thickness of hole injection layer 5 is more uniform.
During pixel defining layer 3 is formed, acrylic/PI materials in pixel defining layer material are deposited on following shape
Pixel defines a layer understructure, and the fluorine resin material in pixel defining layer material then floats up to surface and forms pixel circle
Given layer superstructure.The material of pixel defining layer understructure is hydrophilic, and the material of pixel defining layer superstructure is
It is hydrophobic.In the present embodiment, when in the forming process of hole injection layer, hole injection layer still can be along under immersional wetting
The side of pixel defining layer understructure is climbed upwards, but since partial holes implanted layer is located in sunk structure, this just makes
The thickness for obtaining hole injection centre position is compensated, and hole injection layer is no longer the shape of intermediate thin and both sides thickness, but
Thickness tends to uniform arc film, so as to avoid caused by hole injection layer is in uneven thickness light emitting functional layer send out
The non-uniform situation of light.
Further, which further includes thin film transistor (TFT), which is located at underlay substrate and insulating layer
Between.The thin film transistor (TFT) is located on underlay substrate, and insulating layer 1 is located on the thin film transistor (TFT).Thin film transistor (TFT) includes
Grid, active layer, source electrode and drain electrode, it is preferable that active layer is located at the top of grid, and source electrode and drain electrode are located at active layer.
Be provided with via on insulating layer 1, the via positioned at drain electrode top, 2 part of first electrode be located in via with drain contact,
Connected so as to fulfill first electrode 2 and drain electrode.It should be noted that：Thin film transistor (TFT) and via are not drawn specifically in Fig. 1.
Alternatively, sunk structure is located in underlay substrate.Specifically, sunk structure be located at underlay substrate and pixel region
Correspondence position.Such a situation is no longer specifically drawn.
In the technical solution of display base plate provided in this embodiment, the structure of the close underlay substrate side of light emitting functional layer
In sunk structure so that the thickness of light emitting functional layer is uniform, the problem of avoiding light emitting functional layer non-uniform light, so that
Improve the luminescent properties of OLED device.
The utility model embodiment two provides a kind of display device, which includes above-mentioned display base plate.
Wherein, display base plate can use the display base plate that above-described embodiment one provides, and details are not described herein again.
In the technical solution of display base plate provided in this embodiment, the structure of the close underlay substrate side of light emitting functional layer
In sunk structure so that the thickness of light emitting functional layer is uniform, the problem of avoiding light emitting functional layer non-uniform light, so that
Improve the luminescent properties of OLED device.
Fig. 4 is a kind of flow chart of the manufacture method for display base plate that the utility model embodiment three provides, such as Fig. 4 institutes
Show, this method includes：
Step 101, form thin film transistor (TFT) on underlay substrate.
Step 102, in the top of underlay substrate form insulating layer, and insulating layer is located on thin film transistor (TFT).
Fig. 5 a are the schematic diagram to form insulating layer, as shown in Figure 5 a, insulating layer 1 are formed in the top of underlay substrate 6.Its
In, the thin film transistor (TFT) between underlay substrate 6 and insulating layer 1 is not drawn specifically.
Step 103, form sunk structure and form via on the insulating layer on the insulating layer, first electrode by via with
Thin film transistor (TFT) connects.
This step specifically may include：
Step 1031, by mask plate be exposed insulating layer to form unexposed area, complete exposure area and part
Exposure area, partial exposure area include exposed portion and unexposed portion, and mask plate includes shading light part, complete light transmission part
With partial light permeability part, wherein, shading light part is corresponding with unexposed area, and complete light transmission part is corresponding with complete exposure area,
Partial light permeability part is corresponding with partial exposure area.The material of insulating layer 1 is resin material.Preferably, the material of insulating layer 1 is
Organic photo resin material, the organic photo resin material can be the acrylic material or polyamides Asia mixed with photoactive
Amine material.
Fig. 5 b are the schematic diagram that is exposed to insulating layer, and as shown in Figure 5 b, mask plate includes shading light part 7, completely thoroughly
Light part 8 and partial light permeability part 9, wherein, complete light transmission part 8 can use open mask plate (Open Mask) structure, part
Light transmission part 9 can use intermediate tone mask plate (Half-tone Mask) structure.Formed after being exposed to insulating layer unexposed
Region 10, complete exposure area 11 and partial exposure area, wherein, partial exposure area includes exposed portion 12 and unexposed portion
Divide 13.
Step 1032, develop the insulating layer after exposure, removes complete exposure area to form via, removes part
Exposed portion in exposure area retains the unexposed portion in unexposed area and partial exposure area to form sunk structure
Point, wherein, insulating layer includes the unexposed portion in unexposed area and partial exposure area.
Fig. 5 c are the schematic diagram to develop to the insulating layer after exposure, as shown in Figure 5 c, remove complete exposure region in Fig. 5 b
Domain 11 removes the exposed portion 12 in Fig. 5 b in partial exposure area 12 to form sunk structure 4, insulating layer to form via 14
1 includes the unexposed portion 13 in unexposed area 10 and partial exposure area in Fig. 5 b of reservation.
Step 104, insulating layer remote underlay substrate side formed first electrode.
As shown in Figure 1, forming first electrode 2 on insulating layer 1, part first electrode 2 is located in sunk structure 4.Separately
Outside, it is connected in the via 14 that part first electrode 2 is also located in Fig. 5 c with realizing with the drain electrode in thin film transistor (TFT).
Step 105, in the side of the remote underlay substrate of first electrode form pixel defining layer, and pixel defining layer limits
Pixel region, pixel region are corresponding with sunk structure.
As shown in Figure 1, forming pixel defining layer 3 on first electrode 2, pixel defining layer 3 limits pixel region P,
Pixel region P is corresponding with sunk structure 4.In other words, sunk structure 4 be located at insulating layer 1 with pixel region correspondence position.
Step 106, the light emitting functional layer that formed in pixel region, the structure of the close underlay substrate side of light emitting functional layer
In sunk structure.
Sent out as shown in Figure 1, can be formed in pixel region by inkjet printing (Ink Jet Print, abbreviation IJP) technique
Light functional layer.For example, hole injection layer 5, the structure of the close underlay substrate side of hole injection layer 5 are realized using IJP techniques
In sunk structure 4.
In the technical solution of the manufacture method of display base plate provided in this embodiment, the close underlay substrate of light emitting functional layer
The structure of side is located in sunk structure so that the thickness of light emitting functional layer is uniform, avoids light emitting functional layer non-uniform light
The problem of, so as to improve the luminescent properties of OLED device.
It is understood that embodiment of above is merely to illustrate that the principle of the utility model and uses exemplary
Embodiment, but the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case of the spirit and essence of utility model, various changes and modifications can be made therein, these variations and modifications are also considered as this reality
With new protection domain.
Claims (9)
- A kind of 1. display base plate, it is characterised in that including：Underlay substrate and the first electrode on the underlay substrate and Two electrodes, the second electrode are located at the side of the remote underlay substrate of the first electrode, first electrode and described Pixel defining layer and light emitting functional layer are provided between two electrodes, the pixel defining layer limits pixel region, with the picture Plain region correspondence position is provided with sunk structure, and the light emitting functional layer is located in the pixel region, the light emitting functional layer The structure of the close underlay substrate side be located in the sunk structure.
- 2. display base plate according to claim 1, it is characterised in that further include insulating layer, the insulating layer is positioned at described The side of the close underlay substrate of first electrode；The sunk structure is being located at the insulating layer with the pixel region correspondence position.
- 3. display base plate according to claim 1, it is characterised in that the depth in the centre position of the sunk structure is more than The depth of marginal position.
- 4. display base plate according to any one of claims 1 to 3, it is characterised in that the surface of the sunk structure is cambered surface.
- 5. display base plate according to claim 1, it is characterised in that the light emitting functional layer includes more sub- lighting functions Layer, the structure of the close underlay substrate side of the sub- light emitting functional layer set close to the first electrode is positioned at described In sunk structure.
- 6. display base plate according to claim 5, it is characterised in that the multiple sub- light emitting functional layer is respectively set successively Hole injection layer, hole transmission layer, electroluminescence layer, electron transfer layer and the electron injecting layer put, the hole injection layer lean on The nearly first electrode is set, and the part-structure of the close underlay substrate side of the hole injection layer is located at the depression In structure.
- 7. display base plate according to claim 5, it is characterised in that the thickness of each position of the sub- light emitting functional layer Difference range be 0nm to 100nm.
- 8. display base plate according to claim 5, it is characterised in that the thickness of each position of the sub- light emitting functional layer It is identical.
- 9. a kind of display device, it is characterised in that including any display base plate of claim 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721143201.2U CN207303093U (en) | 2017-09-07 | 2017-09-07 | Display base plate and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721143201.2U CN207303093U (en) | 2017-09-07 | 2017-09-07 | Display base plate and display device |
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| CN207303093U true CN207303093U (en) | 2018-05-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133844A (en) * | 2020-10-21 | 2020-12-25 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method thereof, display panel and preparation method thereof and display device |
-
2017
- 2017-09-07 CN CN201721143201.2U patent/CN207303093U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112133844A (en) * | 2020-10-21 | 2020-12-25 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method thereof, display panel and preparation method thereof and display device |
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