CN207263314U

CN207263314U - A kind of sheath temperature detection device

Info

Publication number: CN207263314U
Application number: CN201720898676.6U
Authority: CN
Inventors: 王劲松
Original assignee: Individual
Current assignee: Individual
Priority date: 2017-07-24
Filing date: 2017-07-24
Publication date: 2018-04-20
Anticipated expiration: 2027-07-24

Abstract

It the utility model is related to a kind of sheath temperature detection device; including convex tactile, groove, base, fixed thread, probe, ceramic base, protective cover and pin interfaces; probe is arranged on sensor base; fixed thread is arranged on probe top, and pin interfaces are arranged on the side wall of base, and ceramic base is installed on chassis interior; the circle of protective cover bottom one sets convex touch; and convex tactile and protective cover integrally connected, groove is set in base top, convex tactile embedded groove is interior so as to fix protective cover.Securely and reliably, the temperature-detecting device of this practical design, precision is high, simple to operate, preferably promotes the use of.

Description

A kind of sheath temperature detection device

Technical field

It the utility model is related to testing equipment field, more particularly to a kind of sheath temperature detection device.

Background technology

Instantly sheath temperature detection device accuracy of detection is low, while complicated, it is impossible to which it is cumbersome to detect signal transmission, significantly Reduce the work efficiency of operating personnel, high cost and low economic benefits.

Utility model content

The purpose of this utility model is to provide a kind of sheath temperature detection device, to solve above-mentioned technical problem, in fact Existing above-mentioned purpose the utility model uses following technical scheme：

A kind of sheath temperature detection device, including convex tactile, groove, base, fixed thread, probe, ceramic base, protective cover And pin interfaces, probe are arranged on sensor base, fixed thread is arranged on probe top, and pin interfaces are arranged on the side of base On wall, ceramic base is installed on chassis interior, and the circle setting of protective cover bottom one is convex to touch, and convex tactile and protective cover integrally connected, Base top sets groove, and convex tactile embedded groove is interior so as to fixed protective cover.

On the basis of above-mentioned technical proposal, one layer of water proof rubber gasket is laid with the groove.

On the basis of above-mentioned technical proposal, the ceramic base bottom set temperature detection circuit, in circuit chips U1 IR2 ports are through resistance R1 connecting resistance RTD, while IR2 ports connect the collector of transistor Q2, and the IR1 ports of chip U1 are through resistance R5 connects the base stage of transistor Q2, and the VLIN ports of chip U1 connect the collector of transistor Q2 through resistance R2, while VLIN ports pass through Resistance R3 connects the VIN- ports of chip U1, and the VIN+ ports of chip U1 connect the collector of transistor Q2, the RG ports warp of chip U1 Resistance R4 connects another RG port of chip U1, and resistance RTD connects the base stage of transistor Q2 through resistance R7, and resistance RTD is through resistance R8 The emitter of transistor Q2 is connect, while resistance R8 connects the IRET ports of chip U1 through resistance R6 and capacitance C2 respectively, chip U1's V+ ports connect the collector of transistor Q1, and V+ ports meet capacitance C2 through diode D1, and capacitance C2 ground connection, V+ ports connect through capacitance C1 The IN+ ports of chip U2, the B ports of chip U1 connect the base stage of transistor Q1, and the E ports of chip U2 connect the transmitting of transistor Q1 Pole, the I/O port of chip U1 connect the IN+ ports of chip U2, and CT ports, RCVGND ports and the REFGND ports of chip U2 are at the same time Ground connection,-V the ports of chip U2 are grounded through capacitance C4, while chip-V port directly meets -12V voltages, the RCVFB of chip U2 Port connects the RCVO ports of chip U2, and the RCVO ports of chip U2 connect output terminal through resistance R9, while resistance R9 is respectively through capacitance C3 and diode D3 ground connection, resistance R9 meet power supply VCC through diode D2, and the REFO ports REFFB ports of chip U2 connect core at the same time The REFIN ports of piece U2.

On the basis of above-mentioned technical proposal, the detecting head surface uses three layers of polishing treatment, while is laid with one layer of anti-corrosion and applies Layer.

The temperature-detecting device of the utility model design is quick on the draw, and accuracy of detection is high, simple to operate, with measured object Body directly contacts, thermal response speed is fast, greatly improves the work efficiency of operating personnel, while the cost that degrades.

Brief description of the drawings

Fig. 1 is the structure diagram of the utility model.

Fig. 2 is the structure diagram of protective cover.

Fig. 3 is the scheme of installation of protective cover.

Fig. 4 is temperature sensing circuit figure.

In figure：1- is convex to be touched；2- grooves；3- bases；4- fixed threads；5- pops one's head in；6- ceramic bases；7- protective covers；8- draws Line interface.

Embodiment

The utility model is further elaborated with specific embodiment below in conjunction with the accompanying drawings.

A kind of sheath temperature detection device, including it is convex touch 1, groove 2, base 3, fixed thread 4, probe 5, ceramic base 6, Protective cover 7 and pin interfaces 8, probe 5 are arranged on sensor base, and fixed thread 4 is arranged on the top of probe 5, and pin interfaces 8 are set Put on the side wall of base 3, ceramic base 6 is installed on inside base 3, and 7 bottom one of protective cover circle sets convex tactile 1, and convex tactile 1 With 7 integrally connected of protective cover, groove 2 is set at the top of base 3, it is convex to touch in 1 insertion groove 2 so as to fixed protective cover 7.

One layer of water proof rubber gasket is laid with the groove 7.

The 6 bottom set temperature detection circuit of ceramic base, IR2 ports connect electricity through resistance R1 in circuit chips U1 RTD is hindered, while IR2 ports connect the collector of transistor Q2, the IR1 ports of chip U1 connect the base stage of transistor Q2 through resistance R5, The VLIN ports of chip U1 connect the collector of transistor Q2 through resistance R2, while VLIN ports connect chip U1's through resistance R3 VIN- ports, the VIN+ ports of chip U1 connect the collector of transistor Q2, and the RG ports of chip U1 connect chip U1's through resistance R4 Another RG port, resistance RTD connect the base stage of transistor Q2 through resistance R7, and resistance RTD connects the transmitting of transistor Q2 through resistance R8 Pole, while resistance R8 connects the IRET ports of chip U1 through resistance R6 and capacitance C2 respectively, the V+ ports of chip U1 meet transistor Q1 Collector, V+ ports meet capacitance C2 through diode D1, and capacitance C2 ground connection, V+ ports connect the IN+ ports of chip U2 through capacitance C1, The B ports of chip U1 connect the base stage of transistor Q1, and the E ports of chip U2 connect the emitter of transistor Q1, the I/O port of chip U1 The IN+ ports of chip U2 are connect, CT ports, RCVGND ports and the REFGND ports of chip U2 are grounded at the same time ,-V the ends of chip U2 Mouth is grounded through capacitance C4, while chip-V port directly connects -12V voltages, and the RCVFB ports of chip U2 meet the RCVO of chip U2 Port, the RCVO ports of chip U2 connect output terminal through resistance R9, while resistance R9 is grounded through capacitance C3 and diode D3 respectively, Resistance R9 meets power supply VCC through diode D2, and the REFO ports REFFB ports of chip U2 connect the REFIN ports of chip U2 at the same time.

The detecting head surface uses three layers of polishing treatment, while is laid with one layer of corrosion-inhibiting coating.

The temperature-detecting device of the utility model design by detection temperature signal of popping one's head in, then through temperature sensing circuit at Send to microcontroller and handled after reason, temperature-detecting device corresponding speed is fast, and detection is accurate, is conducive to the transmission of signal.

The above is the utility model preferred embodiment, for the ordinary skill in the art, according to this reality With new teaching, in the case where not departing from the principle of the utility model with spirit, the change that is carried out to embodiment, repair Change, replace and modification is still fallen within the scope of protection of the utility model.

Claims

1. a kind of sheath temperature detection device, it is characterised in that including convex tactile, groove, base, fixed thread, probe, ceramic bottom Seat, protective cover and pin interfaces, probe are arranged on sensor base, and fixed thread is arranged on probe top, and pin interfaces are set On the side wall of base, ceramic base is installed on chassis interior, and the circle setting of protective cover bottom one is convex to touch, and convex tactile and protective cover one Body connects, and sets groove in base top, convex tactile embedded groove is interior so as to fixed protective cover.

2. a kind of sheath temperature detection device according to claim 1, it is characterised in that one layer is laid with the groove and is prevented Water rubber gasket.

3. a kind of sheath temperature detection device according to claim 1, it is characterised in that the ceramic base bottom is set Temperature sensing circuit, IR2 ports are through resistance R1 connecting resistance RTD in circuit chips U1, while IR2 ports connect the collection of transistor Q2 Electrode, the IR1 ports of chip U1 connect the base stage of transistor Q2 through resistance R5, and the VLIN ports of chip U1 connect transistor through resistance R2 The collector of Q2, while VLIN ports connect the VIN- ports of chip U1 through resistance R3, the VIN+ ports of chip U1 meet transistor Q2 Collector, the RG ports of chip U1 connect another RG port of chip U1 through resistance R4, and resistance RTD connects transistor through resistance R7 The base stage of Q2, resistance RTD connects the emitter of transistor Q2 through resistance R8, while resistance R8 connects core through resistance R6 and capacitance C2 respectively The IRET ports of piece U1, the V+ ports of chip U1 connect the collector of transistor Q1, and V+ ports connect capacitance C2, capacitance through diode D1 C2 is grounded, and V+ ports connect the IN+ ports of chip U2 through capacitance C1, and the B ports of chip U1 connect the base stage of transistor Q1, chip U2's E ports connect the emitter of transistor Q1, and the I/O port of chip U1 meets the IN+ ports of chip U2, the CT ports of chip U2, RCVGND Port and REFGND ports are grounded at the same time, chip U2-V port is grounded through capacitance C4, while chip-V port directly meets-12V Voltage, the RCVFB ports of chip U2 connect the RCVO ports of chip U2, and the RCVO ports of chip U2 connect output terminal through resistance R9, together When resistance R9 be grounded respectively through capacitance C3 and diode D3, resistance R9 connects power supply VCC, the REFO ports of chip U2 through diode D2 REFFB ports connect the REFIN ports of chip U2 at the same time.

4. a kind of sheath temperature detection device according to claim 1, it is characterised in that the detecting head surface uses three layers Polishing treatment, while it is laid with one layer of corrosion-inhibiting coating.