CN207218534U - A kind of power-switching circuit of compatible two kinds of adapters - Google Patents
A kind of power-switching circuit of compatible two kinds of adapters Download PDFInfo
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- CN207218534U CN207218534U CN201721104308.6U CN201721104308U CN207218534U CN 207218534 U CN207218534 U CN 207218534U CN 201721104308 U CN201721104308 U CN 201721104308U CN 207218534 U CN207218534 U CN 207218534U
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Abstract
The utility model provides a kind of power-switching circuit of compatible two kinds of adapters, belongs to power circuit field.The utility model includes power supply handover module and the DC DC voltage reduction modules being connected with power supply switch unit, wherein, power supply handover module includes the first power output unit, second source output unit, first switching switch, second switching switch, delay unit, first power output unit, second source output unit is connected with power supply respectively, the first switching switch is connected by divider resistance with power supply, the second switching switch is connected with the first switching switch and power supply respectively by delay unit, first switching switch controls the power switch of first power output unit, the second switching switch controls the power switch of the second source output unit.The utility model, to the compatibility of adapter, realizes that two kinds of specification adapters of 12V/1 Λ and 5V/2 Λ can be with same set top box using better simply circuit realiration.
Description
Technical field
It the utility model is related to a kind of power circuit, more particularly to a kind of power-switching circuit of compatible two kinds of adapters.
Background technology
It is more diversified to commonly use adapter output voltage on the market now, there is 5V, 9V, 12V, 24V etc., and output interface base
It is just as in sheet, if do not examined, adapter improper use often occurs and causes the phenomenon of electrical equipment damage, together
Sample, set top box can also use 5V/2A and 12V/1A, 12V/2A adapter.
At present, the Mini DVB＆OTT set top boxes of my company have the adapter for using 5V/2A and 12V/1A, although machine
Shell has printing silk-screen 5V/2A and 12V/1A, but still some engineers do not pay attention to that mistake will be used, if adapter provides voltage
When being mismatched with machine input voltage, have following bad phenomenon and occur：
(1) when 5V/2A set top box uses 12V/1A adapter, mainboard will damage DC- corresponding to 5V/2A
DC, the maximum of its input voltage is exceeded；
(2) when 12V/1A set top box uses 5V/2A adapter, mainboard corresponding to 12V/1A is not started shooting.
Utility model content
To solve the problems of the prior art, the utility model provides a kind of power-switching circuit, and the two of compatible our company
Kind adapter, avoids the generation of above-mentioned bad phenomenon.
The utility model includes power supply handover module and the DC-DC voltage reduction modules being connected with power supply switch unit, wherein, electricity
Source handover module includes the first power output unit, second source output unit, the first switching is switched, the second switching is switched, prolonged
Shi Danyuan, first power output unit, second source output unit are connected with power supply respectively, and the first switching switch is logical
Cross divider resistance with power supply to be connected, the second switching switch switchs with the first switching respectively by delay unit and power supply phase
Even, the first switching switch controls the power switch of first power output unit, the second switching switch control described the
The power switch of two power output units.
The utility model is further improved, and first power output unit is metal-oxide-semiconductor Q3, the grid of the metal-oxide-semiconductor Q3
Pole is connected with the first switching switch, the source electrode and drain electrode out-put supply of the metal-oxide-semiconductor Q3.
The utility model is further improved, and the first switching switch includes resistance R1, resistance R2, resistance R3, three poles
Pipe Q1, the triode Q1 base stage are by the way that between resistance R3 connecting resistances R1 and resistance R2, the triode Q1 colelctor electrodes pass through
Divider resistance R5 connects metal-oxide-semiconductor Q3 grids, the triode Q1 grounded emitters.
The utility model is further improved, the second source output unit include metal-oxide-semiconductor Q4, resistance R7, electric capacity C2,
Electric capacity C3, the metal-oxide-semiconductor Q4 source electrodes connect power supply, and resistance R7 two terminates metal-oxide-semiconductor source electrode and grid, and the electric capacity C2 and electric capacity C3 are simultaneously
It is connected on metal-oxide-semiconductor Q4 drain electrode ends.
The utility model is further improved, and the second switching switch is triode Q2, and the triode Q2 base stages connect
Delay unit, the triode Q2 colelctor electrodes connect metal-oxide-semiconductor Q4 grids by divider resistance R8, and the triode Q2 emitter stages connect
Ground.
The utility model is further improved, and the delay unit is RC delay circuits, including resistance R6 and electric capacity C1, institute
State resistance R6 mono- to terminate between triode Q1 colelctor electrodes and resistance R5, the resistance R6 other ends meet electric capacity C1 one end and three respectively
Pole pipe Q2 base stages, the electric capacity C1 other ends ground connection.
The utility model is further improved, and the triode Q1 and Q2 is NPN type silicone tube triode, the metal-oxide-semiconductor Q3
It is PMOS with Q4.
The utility model is further improved, and 12V voltages are dropped to 5V voltages by the DC-DC voltage reduction modules.
The utility model is further improved, the DC-DC voltage reduction modules output end be further connected with prevent power supply from pouring in down a chimney every
From unit.
The utility model is further improved, and the isolated location is diode D1.
Compared with prior art, the beneficial effects of the utility model are：Using better simply circuit realiration to adapter
Compatibility, realize that two kinds of specification adapters of 12V/1A and 5V/2A can be very useful with same set top box, effectively avoid
The generation of bad phenomenon in the prior art.
Brief description of the drawings
Fig. 1 is the utility model structure diagram；
Fig. 2 is power supply handover module circuit theory diagrams；
Fig. 3 is DC-DC voltage reduction module circuit theory diagrams.
Embodiment
The utility model is described in further details with reference to the accompanying drawings and examples.
As shown in figure 1, the utility model includes power supply handover module and the DC-DC being connected with power supply switch unit decompression moulds
Block, wherein, power supply handover module includes the first power output unit, second source output unit, the first switching switchs, second cuts
Switch, delay unit are changed, first power output unit, second source output unit are connected with power supply respectively, and described first
Switching switch is connected by divider resistance with power supply, and the second switching switch is switched with the first switching respectively by delay unit
It is connected with power supply, the first switching switch controls the power switch of first power output unit, the second switching switch control
Make the power switch of the second source output unit.
As shown in Fig. 2 first power output unit is metal-oxide-semiconductor Q3, the grid of the metal-oxide-semiconductor Q3 is opened with the first switching
Close and be connected, the source electrode and drain electrode out-put supply of the metal-oxide-semiconductor Q3.
The first switching switch includes resistance R1, resistance R2, resistance R3, triode Q1, the base stage of the triode Q1
By the way that between resistance R3 connecting resistances R1 and resistance R2, the triode Q1 colelctor electrodes connect metal-oxide-semiconductor Q3 grids by divider resistance R5,
The triode Q1 grounded emitters.
The second source output unit includes metal-oxide-semiconductor Q4, resistance R7, electric capacity C2, electric capacity C3, the metal-oxide-semiconductor Q4 source electrodes
Power supply is connect, resistance R7 two terminates metal-oxide-semiconductor source electrode and grid, the electric capacity C2 and electric capacity C3 are attempted by metal-oxide-semiconductor Q4 drain electrode ends.
The second switching switch is triode Q2, and the triode Q2 base stages connect delay unit, the triode Q2 collection
Electrode connects metal-oxide-semiconductor Q4 grids, the triode Q2 grounded emitters by divider resistance R8.
The delay unit is RC delay circuits, including resistance R6 and electric capacity C1, the resistance R6 mono- terminate triode Q1
Between colelctor electrode and resistance R5, the resistance R6 other ends meet electric capacity C1 one end and triode Q2 base stages, the electric capacity C1 respectively
The other end is grounded.
This example triode Q1 and Q2 are NPN type silicone tube triode, and the metal-oxide-semiconductor Q3 and Q4 is PMOS.
The operation principle of this example is：
When adapter input 12V power supplys (DC_IN), triode Q1 conductings, Q2, therefore can be a little later due to there is RC delay units
Conducting, at this moment triode Q1 colelctor electrodes are turned on emitter stage, therefore metal-oxide-semiconductor Q3 is turned on, while triode Q2 base stage is moved to ground,
Therefore metal-oxide-semiconductor Q4 is not turned on, such power supply DC_IN realizes that 12V is exported by metal-oxide-semiconductor Q3 drain electrode and source electrode.
When adapter inputs 5V, triode Q1 is not turned on, and triode Q2 can be led a little later due to there is RC delay circuits
Logical, at this moment triode Q1 colelctor electrodes are not turned on emitter stage, and triode Q2 base stage is high level, therefore triode Q2 is turned on, institute
Backward voltage is added to turn on metal-oxide-semiconductor Q4 source electrodes and grid, so as to realize that 5V is exported.
As shown in figure 3, the power unit of Mini DVB＆OTT set top boxes uses the area of 12V/1A and 5V/2A adapters at present
It is not to use 12V/1A adapters, more 12V turn 5V DC-DC circuit, so in order to compatible 12V/1A's and 5V/2A
Adapter, this example also include the DC-DC voltage reduction module circuits that a 12V turns 5V.
In order to prevent 5V inputs from turning the interference of 5V DC-DC reduction voltage circuits to 12V, also add in 5V output ends prevents electricity
The isolated location that source is poured in down a chimney, the isolated location of this example is Schottky diode D1.
The specific implementation of this example is：
As input 12V, by resistance R1, R2 partial pressures, bias voltage 1 is 1.09V, and triode Q1 base voltages are more than
0.7V, therefore turn on, the voltage pull-down of triode Q2 base stages, triode Q2 postpones 0.1S conductings due to there is RC delay units.
Delay time passes through formula：Delay time=R*C*ln ((E-V)/E) draws, wherein, " " is negative sign；Resistance R6 and
Electric capacity C1 is series connection, and R6 unit is ohm, and C1 unit is F；Voltages of the E between series resistance R6 and electric capacity C1, V are electricity
The voltage to be reached between appearance, ln are natural logrithms.
It is computed as above and draws, resistance R6 voltages have been pulled to low level in 0.1S time, therefore at triode Q2
In cut-off state, triode Q2 cut-offs, metal-oxide-semiconductor Q4 grid is high level, therefore metal-oxide-semiconductor Q4 is not turned on, and metal-oxide-semiconductor Q3 grid is
Low level, therefore metal-oxide-semiconductor Q3 is turned on, and realizes that 12V is exported.
As input 5V, by resistance R1, R2 partial pressures, bias voltage 1 is 0.45V, and triode Q1 base voltages are less than 0.7V,
Therefore triode Q1 is in cut-off state, 5V is by resistance R4, R5, after R6 partial pressures so that the voltage of triode Q2 base stages is more than
0.7V, therefore triode Q2 is turned on, so as to which metal-oxide-semiconductor Q4 source electrodes and grid produce bias voltage and turned on more than threshold voltage, by 5V
Output, by electric capacity C2 and C3 filtering output to system.
Theoretical bias voltage calculation formula is：Bias voltage 1=input voltage * R2 (R1+R2), it can be seen that, it is theoretical inclined
It is directly proportional to input voltage to put voltage 1, realizes that power supply switching key sees triode Q1.
Compatibility of the utility model using better simply circuit realiration to adapter, realize two kinds of rule of 12V/1A and 5V/2A
Lattice adapter can be very useful with same set top box, effectively prevent the generation of bad phenomenon in the prior art.
Embodiment described above is better embodiment of the present utility model, and it is new not to limit this practicality with this
The specific implementation scope of type, the scope of the utility model includes being not limited to present embodiment, all according to the utility model
The equivalence changes made are in the scope of protection of the utility model.
Claims (10)
- A kind of 1. power-switching circuit of compatible two kinds of adapters, it is characterised in that：Cut including power supply handover module and with power supply The connected DC-DC voltage reduction modules of unit are changed, wherein, power supply handover module includes the first power output unit, second source exports Unit, the first switching switch, the second switching switch, delay unit, first power output unit, second source output unit It is connected respectively with power supply, the first switching switch is connected by divider resistance with power supply, and the second switching switch is by prolonging Shi Danyuan is connected with the first switching switch and power supply respectively, and the first switching switch controls the power supply of first power output unit Switch, the second switching switch control the power switch of the second source output unit.
- 2. power-switching circuit according to claim 1, it is characterised in that：First power output unit is metal-oxide-semiconductor Q3, the grid of the metal-oxide-semiconductor Q3 are connected with the first switching switch, the source electrode and drain electrode out-put supply of the metal-oxide-semiconductor Q3.
- 3. power-switching circuit according to claim 2, it is characterised in that：It is described first switching switch include resistance R1, Resistance R2, resistance R3, triode Q1, the triode Q1 base stage are described by between resistance R3 connecting resistances R1 and resistance R2 Triode Q1 colelctor electrodes connect metal-oxide-semiconductor Q3 grids, the triode Q1 grounded emitters by divider resistance R5.
- 4. power-switching circuit according to claim 3, it is characterised in that：The second source output unit includes MOS Pipe Q4, resistance R7, electric capacity C2, electric capacity C3, the metal-oxide-semiconductor Q4 source electrodes connect power supply, and resistance R7 two terminates metal-oxide-semiconductor source electrode and grid, The electric capacity C2 and electric capacity C3 are attempted by metal-oxide-semiconductor Q4 drain electrode ends.
- 5. power-switching circuit according to claim 4, it is characterised in that：The second switching switch is triode Q2, The triode Q2 base stages connect delay unit, and the triode Q2 colelctor electrodes connect metal-oxide-semiconductor Q4 grids by divider resistance R8, described Triode Q2 grounded emitters.
- 6. power-switching circuit according to claim 5, it is characterised in that：The delay unit is RC delay circuits, bag Include resistance R6 and electric capacity C1, between the termination triode Q1 colelctor electrodes of resistance R6 mono- and resistance R5, the resistance R6 other ends Electric capacity C1 one end and triode Q2 base stages, the electric capacity C1 other ends ground connection are connect respectively.
- 7. power-switching circuit according to claim 6, it is characterised in that：The triode Q1 and Q2 is NPN type silicone tube Triode, the metal-oxide-semiconductor Q3 and Q4 are PMOS.
- 8. according to the power-switching circuit described in claim any one of 1-7, it is characterised in that：The DC-DC voltage reduction modules will 12V voltages drop to 5V voltages.
- 9. power-switching circuit according to claim 8, it is characterised in that：The DC-DC voltage reduction modules output end also connects There is the isolated location for preventing power supply from pouring in down a chimney.
- 10. power-switching circuit according to claim 9, it is characterised in that：The isolated location is diode D1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721104308.6U CN207218534U (en) | 2017-08-30 | 2017-08-30 | A kind of power-switching circuit of compatible two kinds of adapters |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721104308.6U CN207218534U (en) | 2017-08-30 | 2017-08-30 | A kind of power-switching circuit of compatible two kinds of adapters |
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| Publication Number | Publication Date |
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| CN207218534U true CN207218534U (en) | 2018-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201721104308.6U Active CN207218534U (en) | 2017-08-30 | 2017-08-30 | A kind of power-switching circuit of compatible two kinds of adapters |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112233612A (en) * | 2020-10-28 | 2021-01-15 | 福建捷联电子有限公司 | Automatic judgment device for LED display screen receiving card |
-
2017
- 2017-08-30 CN CN201721104308.6U patent/CN207218534U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112233612A (en) * | 2020-10-28 | 2021-01-15 | 福建捷联电子有限公司 | Automatic judgment device for LED display screen receiving card |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191120 Address after: 518000 1403a, building B, innovation building, 198 Daxin Road, majialong community, Nantou street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen xiaoxiliu Technology Co., Ltd Address before: 518000 Guangdong city of Shenzhen province Nanshan District Yuquanlu Road Yizhe building 7 floor East (office only) Patentee before: Shenzhen AOK Polytron Technologies Inc |
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| TR01 | Transfer of patent right |