CN207217081U - Image element circuit, display base plate and display device - Google Patents
Image element circuit, display base plate and display device Download PDFInfo
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- CN207217081U CN207217081U CN201721223457.4U CN201721223457U CN207217081U CN 207217081 U CN207217081 U CN 207217081U CN 201721223457 U CN201721223457 U CN 201721223457U CN 207217081 U CN207217081 U CN 207217081U
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Abstract
The utility model discloses a kind of image element circuit, including the first transistor, second transistor, third transistor, storage capacitance and light-emitting component；The image element circuit also includes the first sensing unit and the second sensing unit, and first sensing unit is in parallel with the first transistor, and second sensing unit is in parallel with the second transistor；First sensing unit and the second sensing unit are respectively connected to the first sensing signal and the second sensing signal, the collection of the electrical parameter for completing image element circuit according to the first sensing signal and the second sensing signal.The invention also discloses a kind of display base plate and display device.A kind of image element circuit, display base plate and display device provided by the utility model, preferably it can carry out real-Time Compensation using GOA circuits.
Description
Technical field
Display technology field is the utility model is related to, particularly relates to a kind of image element circuit, display base plate and display device.
Background technology
OLED (organic light emitting diode, Organic Light Emitting Diode) display device, is a kind of utilization
Carrier injection and compound and luminous display device occur under electric field driven for luminous organic material, have self-luminous, extensively regard
Angle, high-contrast, compared with low power consumption, high reaction speed the advantages that.
In the prior art, the drive signal of OLED display devices is made up of two control signals GateA and GateB, is being swept
Retouch (Scan) section and carry out common turntable driving, threshold voltage (Vth) compensation and K are carried out in blank (V-blanking) section
Value complement is repaid.When typically using GOA (Gate driver On Array, array base palte on raster data model) technology, clock signal
(CLK) cycle and waveform should be carried out repeatedly in the form of fixed.But the because ripple in Scan sections and V-blanking sections
Shape and cycle are not fixed, so being implemented with GOA technologies more difficult.Therefore, when carrying out real-Time Compensation using GOA circuits
Problem can be produced.
Utility model content
In view of this, the first purpose of the utility model embodiment is to propose a kind of image element circuit, display base plate and shown
Showing device, preferably it can carry out real-Time Compensation using GOA circuits.
Based on above-mentioned purpose, the one side of the utility model embodiment, there is provided a kind of image element circuit, including first
Transistor, second transistor, third transistor, storage capacitance and light-emitting component；The control pole connection the of the first transistor
Scan line, the first pole and the second pole of the first transistor connect the control pole of data wire and third transistor, institute respectively
State second transistor control pole and connect the second scan line, the first pole and the second pole of the second transistor connect described the respectively
Second pole of three transistors and sense wire, the first pole of the third transistor connect the first power end, the storage capacitance
First end and the second end connect the control pole of the third transistor and the first pole of the second transistor respectively, described luminous
The first pole and the second pole of element connect the second pole and second source end of the third transistor, the sensing line parallel respectively
There is sense wire electric capacity；
The image element circuit also includes the first sensing unit and the second sensing unit, first sensing unit and described the
One coupled in parallel, second sensing unit are in parallel with the second transistor；First sensing unit and the second sensing
Unit is respectively connected to the first sensing signal and the second sensing signal, for according to the first sensing signal and the completion of the second sensing signal
The collection of the electrical parameter of sub-pixel.
Optionally, first sensing unit includes the 4th transistor, the control pole connection first of the 4th transistor
Sensing signal line, the first pole and the second pole of the 4th transistor connect the control of the data wire and third transistor respectively
Pole.
Optionally, second sensing unit includes the 5th transistor, the control pole connection second of the 5th transistor
Sensing signal line, the first pole and the second pole of the 5th transistor connect the second pole of the third transistor and described respectively
Sense wire.
Optionally, the first scan line and the second scan line access the identical drive signal.
Optionally, the third transistor is driving transistor.
Optionally, the luminescence unit is Organic Light Emitting Diode.
Second aspect of the utility model embodiment, there is provided a kind of display base plate, including as described in preceding any one
Image element circuit.
3rd aspect of the utility model embodiment, there is provided a kind of display device, including display base plate as previously described.
From the above it can be seen that image element circuit, display base plate and display device that the utility model embodiment provides,
By increasing in image element circuit, the first sensing unit and the second sensing unit are set, and first sensing unit and described the
One coupled in parallel, second sensing unit are in parallel with the second transistor；Make in the drive circuit of image element circuit
One transistor and second transistor complete driven, and the first sensing unit and the second sensing unit complete the electricity of sub-pixel
The collection of parameter, so as to carry out parameter compensation, so so that the driving and compensation of sub-pixel can be carried out independently, so as to
Can the first transistor and second transistor and the first sensing unit of compensated stage in driving stage and the second sensing is single
The respective GOA CLK of member make periodically, have accomplished as far as possible with GOA generation Gate signals, in addition accomplished in real time,
With the Vth and K state of the driving transistor of sub-pixel independently, the image of desired brightness is shown.
Brief description of the drawings
Fig. 1 is the electrical block diagram of OLED pixel circuit of the prior art；
Fig. 1 a are driver' s timing schematic diagram of the OLED pixel circuit of the prior art when threshold voltage senses；
Fig. 1 b are driver' s timing schematic diagram of the OLED pixel circuit of the prior art when K values sense；
Fig. 2 is the structural representation of one embodiment of image element circuit provided by the utility model；
Fig. 3 is the structural representation of another embodiment of image element circuit provided by the utility model；
Fig. 4 a are structure of block diagram signal of the image element circuit embodiment provided by the utility model when by GOA drive controls
Figure；
Fig. 4 b are control signal of the image element circuit embodiment provided by the utility model when threshold voltage is sensed with compensating
Driver' s timing schematic diagram；
When Fig. 4 c are that control signal of the image element circuit embodiment provided by the utility model when K values are sensed with compensating drives
Sequence schematic diagram；
Fig. 5 a are one embodiment schematic diagram of the control method provided by the utility model applied to the image element circuit；
Fig. 5 b are driver' s timing of the one embodiment of image element circuit provided by the utility model when threshold voltage senses
Schematic diagram；
Fig. 6 a are that another embodiment of the control method provided by the utility model applied to the image element circuit is illustrated
Figure；
Fig. 6 b are driver' s timing signal of the one embodiment of image element circuit provided by the utility model when K values sense
Figure.
Embodiment
For the purpose of this utility model, technical scheme and advantage is more clearly understood, below in conjunction with specific embodiment, and
Referring to the drawings, the utility model is further described.
It should be noted that all statements for using " first " and " second " are for area in the utility model embodiment
Be divided to two non-equal entities of same names or non-equal parameter, it is seen that " first " " second " only for statement convenience,
The restriction to the utility model embodiment is should not be construed as, subsequent embodiment no longer illustrates one by one to this.
The pixel-driving circuit of usual AMOLED (active matrix organic light-emitting diode) display device is equipped with for driving
The driving thin film transistor (TFT) of dynamic organic light-emitting diode, in use, due to organic light emitting diode aging with
And the threshold voltage shift of driving thin film transistor (TFT), the display quality of OLED display can be caused to decline, therefore prior art
The threshold voltage for driving thin film transistor (TFT) can be compensated during the use of OLED display, and it is organic for flowing through
The electric current of light emitting diode has equation below：
Ids=(1/2) μnCox(W/L)(Vgs-Vth)2
Wherein, IdsTo flow through the electric current of Organic Light Emitting Diode, μnTo drive the carrier mobility of thin film transistor (TFT), Cox
For drive thin film transistor (TFT) gate oxide unit-area capacitance, W/L be driving thin film transistor (TFT) channel width-over-length ratio, VgsTo drive
The gate-source voltage of dynamic thin film transistor (TFT), VthTo drive the threshold voltage of thin film transistor (TFT)；μnCox(W/L) value is referred to as driving thin
The K values of film transistor, K values can also drift about during the use of oled display substrate, and the drift of K values also can be thin to driving
The performance of film transistor has an impact, and then causes the display quality of OLED display to decline, therefore except being shown in OLED
During the use of device to the compensation of threshold voltage outside, it is also necessary to drive thin film transistor (TFT) K values sensed and compensated,
To ensure the display quality during the use of OLED display.
As shown in figure 1, the electrical block diagram for OLED pixel circuit of the prior art.
The image element circuit, including the first transistor M1, second transistor M2, third transistor M3, storage capacitance C1 and
Light-emitting component OLED；The control pole of the first transistor M1 connects the of the first control line GateA, the first transistor M1
One pole and the second pole connect data wire Data and third transistor M3 control pole respectively, and the second transistor M2 control poles connect
The first pole and the second pole for meeting the second control line GateB, the second transistor M2 connect the third transistor M3's respectively
Second pole and sense wire, the first end of the sense wire is by first switch Sw_Ref connection DAC-circuits, for accessing with reference to electricity
Pressure, the second end of the sense wire by second switch Sw_Samp connection adc circuits, for gather corresponding electrical parameter with
Complete parameter compensation, the first pole connection the first power end ELVDD of the third transistor M3, the first of the storage capacitance Cs
End and the second end connect the control pole of the third transistor M3 and the first pole of the second transistor M2 respectively, described luminous
Element OLED the first pole and the second pole connects the second pole and the second source end ELVSS of the third transistor M3, institute respectively
State sense wire and be parallel with sensing line capacitance Cs.
As shown in Figure 1a, for OLED pixel circuit of the prior art threshold voltage sense (Vth sensing) when
Driver' s timing schematic diagram.
With reference to Fig. 1 and Fig. 1 a, threshold voltage sensing in the prior art and the process of compensation is briefly described below：
OLED pixel circuit of the prior art completes OLED driven in normal driving phase, in clear area
(Blanking) stage realizes that threshold voltage (Vth) senses, and control signal GateA is (with reference to the GateA (n) in figure 1a, GateA
(n+1)) and control signal GateB is high level (with reference to the GateB (n) in figure 1a, GateB (n+1)), the first transistor M1 and
Second transistor M2 is opened.Stage one：First node NodeD writes data line voltage Vdata by the first transistor M1, and first
Sw_Ref closures are switched, third transistor M3 the second pole writes the low level ginseng of DAC-circuit access by second transistor M2
Examine voltage；Stage two：Third transistor M3 is opened, and first node NodeD voltage is Vdata, and the second of third transistor M3
Extremely constantly charge to Vdata-Vth；Stage three：Section point NodeS charges to third transistor M3 by second transistor M2
The second pole voltage Vdata-Vth；Stage four：Second switch Sw_Samp is closed, and section point NodeS voltage passes through ADC
Circuit output to external circuit, external circuit again by algorithm by the Vth information compensations of extraction into data line signal, so as to complete
Into threshold voltage compensation.
As shown in Figure 1 b, the driver' s timing for OLED pixel circuit of the prior art when K values sense (K sensing)
Schematic diagram；
With reference to Fig. 1 and Fig. 1 b, K values sensing in the prior art and the process of compensation is briefly described below：
OLED pixel circuit of the prior art completes OLED driven in normal driving phase, in clear area
(Blanking) stage realizes carrier mobility (Mobility) μnCompensation.Stage one：Control signal GateA is (with reference to figure 1a
In GateA (n), GateA (n+1)) and control signal GateB (with reference to the GateB (n) in figure 1a, GateB (n+1)) for height
Level, the first transistor M1 and second transistor M2 are opened, and first node NodeD writes data wire electricity by the first transistor M1
Vdata, first switch Sw_Ref closures are pressed, third transistor M3 the second pole writes DAC-circuit by second transistor M2 and connect
The low level reference voltage entered；Stage two：Control signal GateA (with reference to the GateA (n) in figure 1a, GateA (n+1)) is low
Level, control signal GateB are high level (with reference to the GateB (n) in figure 1a, GateB (n+1)), and the first transistor M1 is closed,
Second transistor M2 is opened, storage capacitance C1 both ends floating (floating) after charging complete, and third transistor M3 is opened, and the 3rd
Transistor M3 the second pole charges to Vdata, and first node NodeD voltage is coupled to voltage Vdata+Vth；Stage three：Control
Signal GateA processed is low level (with reference to the GateA (n) in figure 1a, GateA (n+1)), and control signal GateB is (with reference in figure 1a
GateB (n), GateB (n+1)) be high level, the first transistor M1 is closed, and second transistor M2 is opened, section point
NodeS charges to the voltage Vdata of third transistor M3 the second pole by second transistor M2；Stage four：Control signal
GateA (with reference to the GateA (n) in figure 1a, GateA (n+1)) and control signal GateB (with reference to the GateB (n) in figure 1a,
GateB (n+1)) it is high level, the first transistor M1 and second transistor M2 are opened, second switch Sw_Samp closures, the second section
Point NodeS voltage is output to external circuit by adc circuit, and external circuit is mended the mobility information of extraction by algorithm
Repay in data line signal, repaid so as to complete K value complements.
From the above, it can be seen that in the prior art, the drive signal of OLED display devices is by two control signals
GateA and GateB is formed, and is carried out common turntable driving in scanning (Scan) section, is entered in blank (V-blanking) section
Row threshold voltage (Vth) is compensated and K value complements are repaid.Typically using GOA (Gate driver On Array, grid on array base palte
Driving) technology when, the cycle of clock signal (CLK) and waveform should be carried out repeatedly in the form of fixed.But such as Fig. 1 a and 1b institutes
Show, because the waveform and cycle in Scan sections and V-blanking sections are not fixed, implemented more with GOA technologies
It is difficult.Therefore, problem can be produced when carrying out real-Time Compensation using GOA circuits.
Based on above-mentioned purpose, a kind of one side of the utility model embodiment a, there is provided reality of image element circuit
Example is applied, preferably can carry out real-Time Compensation using GOA circuits.As shown in Fig. 2 it is image element circuit provided by the utility model
The structural representation of one embodiment.
The image element circuit, including the first transistor M1, second transistor M2, third transistor M3, storage capacitance C1 and
Light-emitting component 10；The control pole of the first transistor M1 connects the of the first scan line D_GataA, the first transistor M1
One pole and the second pole connect data wire Data and third transistor M3 control pole respectively, and the second transistor M2 control poles connect
The first pole and the second pole for meeting the second scan line D_GataB, the second transistor M2 connect the third transistor M3 respectively
The second pole and sense wire, the first end of the sense wire referred to by first switch Sw_Ref connection DAC-circuits for accessing
Voltage, the second end of the sense wire is by second switch Sw_Samp connection adc circuits, for gathering corresponding electrical parameter
To complete parameter compensation, the first pole of the third transistor M3 connects the of the first power end ELVDD, the storage capacitance C1
One end and the second end connect the control pole of the third transistor M3 and the first pole of the second transistor M2, the hair respectively
The first pole and the second pole of optical element 10 connect the second pole and the second source end ELVSS of the third transistor M3, institute respectively
State sense wire and be parallel with sensing line capacitance Cs.
The image element circuit also includes the first sensing unit 20 and the second sensing unit 30, first sensing unit 20 with
The first transistor M1 is in parallel, and second sensing unit 30 is in parallel with the second transistor M2；First sensing is single
The sensing unit 30 of member 20 and second is respectively connected to the first sensing signal S_GateA and the second sensing signal S_GateB, for basis
S_GateA and the second sensing signal S_GateB completes the collection of the electrical parameter of image element circuit.
From above-described embodiment as can be seen that the image element circuit that the utility model embodiment provides, first is set by increasing
Sensing unit and the second sensing unit, and first sensing unit is in parallel with the first transistor, second sensing is single
It is first in parallel with the second transistor；The first transistor in the drive circuit of image element circuit and second transistor is set to complete normally
Driving, and the first sensing unit and the second sensing unit complete the collection of the electrical parameter of sub-pixel, so as to carry out parameter compensation,
So so that the driving and compensation of sub-pixel can be carried out independently, so as to driving the stage the first transistor and
The respective GOA CLK of the first sensing unit and the second sensing unit of second transistor and compensated stage make periodically,
Accomplish to generate Gate signals with GOA as far as possible, or even accomplished Vth and K in real time, with the driving transistor of sub-pixel
State independently, shows the image of desired brightness.
The utility model embodiment additionally provides a kind of another embodiment of image element circuit, can preferably utilize GOA
Circuit carries out real-Time Compensation.As shown in figure 3, the structural representation of another embodiment for image element circuit provided by the utility model
Figure.
The image element circuit, including the first transistor M1, second transistor M2, third transistor M3, storage capacitance C1 and
Light-emitting component 10；The control pole of the first transistor M1 connects the of the first scan line D_GataA, the first transistor M1
One pole and the second pole connect data wire Data and third transistor M3 control pole respectively, and the second transistor M2 control poles connect
The first pole and the second pole for meeting the second scan line D_GataB, the second transistor M2 connect the third transistor M3 respectively
The second pole and sense wire, the first end of the sense wire pass through first switch Sw_Ref connection DAC (digital-to-analogue conversion) electricity
Road, for accessing reference voltage, by second switch Sw_Samp connections ADC, (simulation numeral turns at the second end of the sense wire
Change) circuit, for gathering corresponding electrical parameter to complete parameter compensation, the first pole of the third transistor M3 connects first
Power end ELVDD, the first end of the storage capacitance C1 and the second end connect respectively the third transistor M3 control pole and
The first pole of the second transistor M2, the first pole and the second pole of the light-emitting component 10 connect the third transistor respectively
M3 the second pole and second source end ELVSS, the sense wire are parallel with sensing line capacitance Cs.
The image element circuit also includes the first sensing unit 20 and the second sensing unit 30, first sensing unit 20 with
The first transistor M1 is in parallel, and second sensing unit 30 is in parallel with the second transistor M2；First sensing is single
The sensing unit 30 of member 20 and second is respectively connected to the first sensing signal S_GateA and the second sensing signal S_GateB, for basis
S_GateA and the second sensing signal S_GateB completes the collection of the electrical parameter of image element circuit；
Wherein, first sensing unit 20 includes the 4th transistor M4, the control pole access of the 4th transistor M4
First sensing signal S_GateA, the 4th transistor M4 the first pole and the second pole connect respectively the data wire Data and
Third transistor M3 control pole；So, the first sensing unit 20 is realized by using the 4th transistor M4, on the one hand can
The collection of the electrical parameter of image element circuit is preferably completed, on the other hand realizes simple in construction, technique can be simplified；
Second sensing unit 30 includes the 5th transistor M5, the sense of control pole access second of the 5th transistor M5
The first pole and the second pole for surveying signal S_GateB, the 5th transistor M5 connect the second of the third transistor M3 respectively
Pole and the sense wire；So, the second sensing unit 30 is realized by using the 5th transistor M5, on the one hand can be preferably
The collection of the electrical parameter of image element circuit is completed, on the other hand realizes simple in construction, technique can be simplified.
From above-described embodiment as can be seen that the image element circuit that the utility model embodiment provides, first is set by increasing
Sensing unit and the second sensing unit, and first sensing unit is in parallel with the first transistor, second sensing is single
It is first in parallel with the second transistor；The first transistor in the drive circuit of image element circuit and second transistor is set to complete normally
Driving, and the first sensing unit and the second sensing unit complete the collection of the electrical parameter of sub-pixel, so as to carry out parameter compensation,
So so that the driving and compensation of sub-pixel can be carried out independently, so as to driving the stage the first transistor and
The respective GOA CLK of the first sensing unit and the second sensing unit of second transistor and compensated stage make periodically,
Accomplish to generate Gate signals with GOA as far as possible, or even accomplished Vth and K in real time, with the driving transistor of sub-pixel
State independently, shows the image of desired brightness.
Optionally, phase is accessed with reference to figure 5b and Fig. 6 b, the first scan line D_GataA and the second scan line D_GataB
Same drive signal；So, the first scan line D_GataA and the second scan line D_GataB accesses identical drive signal,
Circuit structure design and the design of driver' s timing can be simplified, so as to simplify technique.Optionally, the third transistor M3 is drive
Dynamic transistor, for driving light-emitting component.Optionally, the light-emitting component 10 is Organic Light Emitting Diode OLED.
It should be noted that to be independently selected from polycrystalline SiTFT, non-crystalline silicon thin for the transistor in the various embodiments described above
One kind in film transistor, oxide thin film transistor and OTFT." the control being related in the present embodiment
Pole " can specifically refer to the grid or base stage of transistor, and " the first pole " can specifically refer to the source electrode or emitter stage of transistor, phase
" the second pole " answered can specifically refer to drain electrode or the colelctor electrode of transistor.Certainly, those skilled in the art should know
It is to be somebody's turn to do " the first pole " to be interchangeable with " the second pole ".
In addition, the first transistor T1, second transistor T2, third transistor T3, the 4th transistor T4 in above-described embodiment
It is N-type transistor with the 5th transistor T5, is a kind of preferred scheme convenient to carry out in the present embodiment, it will not be to this practicality
New technical scheme produces limitation.Those skilled in the art are it should also be understood that simply to the type (N-type of each transistor
Or p-type) be changed, and the positive-negative polarity of each power end and control signal wire output voltage is changed, with realize with
The technical scheme of identical on or off operation is performed in the present embodiment to each transistor, it belongs to the application and protects model
Enclose.Concrete condition, no longer illustrate one by one herein.
The transistor used in all embodiments of the utility model can for thin film transistor (TFT) or FET or other
Characteristic identical device.In the utility model embodiment, to distinguish the two poles of the earth of transistor in addition to grid, wherein it will claim a pole
For source electrode, another pole is referred to as draining.In addition, transistor can be divided into N-type transistor or p-type by being distinguished according to the characteristic of transistor
Transistor.In the drive circuit that the utility model embodiment provides, all transistors are said by taking N-type transistor as an example
It is bright, it is contemplated that using P-type transistor realize when be that those skilled in the art can be before creative work not be made
Put what is readily occurred in, therefore be also in embodiment protection domain of the present utility model.
In the utility model embodiment, for N-type transistor, the first extremely source electrode, second extremely drains, for p-type
Transistor, first extremely drains, the second extremely source electrode.
As shown in fig. 4 a, for image element circuit provided by the utility model above-described embodiment when by GOA drive controls
Structure of block diagram schematic diagram.As can be seen that the different control signal S_CLKA groups and S_STVA, S_ of GOA unit generation from Fig. 4 a
CLKB groups and S_STVB, D_CLKA/B group and D_STVA/B are respectively used to drive module S_GateA (n), S_GateB (n), D_
GateA (n)/B (n), it is set to export corresponding sensing signal or scanning signal；Wherein, Fig. 4 b are illustrated that threshold voltage senses
With control signal S_CLKA groups and S_STVA, S_CLKB group and S_STVB driver' s timing during compensation, that shown in Fig. 4 c is then K
Value sensing and the control signal S_CLKA groups and S_STVA, S_CLKB group and S_STVB driver' s timing during compensation.Pass through Fig. 4 a
The clock control signal of sensing and compensated stage that~4c can be seen that each image element circuit each can drive complete independently sensing
It is dynamic, so as to preferably carry out real-Time Compensation using GOA circuits.
A kind of second aspect of the utility model embodiment a, there is provided implementation of control method of image element circuit
Example, preferably it can carry out real-Time Compensation using GOA circuits.As shown in Figure 5 a, for described in provided by the utility model be applied to
One embodiment schematic diagram of the control method of image element circuit.
With reference to Fig. 2 and with reference to figure 5b, the control method applied to the image element circuit any embodiment, including：
Step 41：In the driving stage, the first scan line D_GataA and the second scan line D_GataB access high level,
The first transistor M1 and second transistor the M2 conducting, the data wire accessed according to the control pole of the third transistor M3 are believed
First supply voltage ELVDD of number Vdata and third transistor M3 the first pole access produces driving current, described in driving
Light-emitting component 10 is luminous；
In compensated stage, the first sensing signal S_GateA and the second sensing signal S_GateB are high level, described
First sensing unit 20 and the second sensing unit 30 are both turned on, wherein：
Step 42：In the first period of compensated stage, the control pole of the third transistor M3 senses by described first
The second pole that unit 20 accesses data line signal Vdata, the third transistor M3 is accessed by second sensing unit 30
Low level reference voltage signal on the sense wire；
Step 43：In the second period of compensated stage, the control pole of the third transistor M3 senses by described first
Unit 20 accesses data line signal Vdata, and the second of the third transistor M3 extremely constantly charges to first voltage；
Step 44：In the 3rd period of compensated stage, the second pole of the second transistor M2 senses by described second
The first voltage of the charging third transistor of unit 30 M3 the second pole；
Step 45：In the 4th period of compensated stage, the first voltage of the second pole of the second transistor M2 passes through institute
State sense wire and be output to external circuit, complete the collection of the electrical parameter of sub-pixel so that external circuit can will be from by algorithm
The Vth information compensations extracted in electrical parameter are into data line signal.
From above-described embodiment as can be seen that the utility model embodiment provide image element circuit control method, by right
The corresponding control method of pixel circuit design, so as to preferably complete drive control and parameter compensation.
Optionally, with reference to figure 5b, the control sequential of the image element circuit includes the driven sequential and sky of image element circuit
White area, the driven sequential that the driving stage is in the control sequential of the image element circuit, the compensated stage are in
Clear area in the control sequential of the image element circuit；So, complete to compensate in clear area, do not interfering with light-emitting component 10 just
Often driving；Optionally, the light-emitting component 10 is Organic Light Emitting Diode OLED.
Optionally, the control method is applied to threshold voltage compensation, and the first voltage is that data line signal voltage subtracts
Remove the threshold voltage of the third transistor, i.e. Vdata-Vth.
Optionally, the 4th transistor M4 is included with reference to figure 3, first sensing unit 20, the 4th transistor M4's
The first pole and the second pole that control pole accesses the first sensing signal S_GateA, the 4th transistor M4 connect the number respectively
According to line Data and third transistor M3 control pole；So, the first sensing unit 20 is realized by using the 4th transistor M4,
On the one hand the collection of the electrical parameter of image element circuit can be preferably completed, on the other hand realizes simple in construction, work can be simplified
Skill；
Second sensing unit 30 includes the 5th transistor M5, the sense of control pole access second of the 5th transistor M5
The first pole and the second pole for surveying signal S_GateB, the 5th transistor M5 connect the second of the third transistor M3 respectively
Pole and the sense wire；So, the second sensing unit 30 is realized by using the 5th transistor M5, on the one hand can be preferably
The collection of the electrical parameter of image element circuit is completed, on the other hand realizes simple in construction, technique can be simplified.
A kind of 3rd aspect of the utility model embodiment, there is provided another implementation of control method of image element circuit
Example, preferably it can carry out real-Time Compensation using GOA circuits.As shown in Figure 6 a, for described in provided by the utility model be applied to
Another embodiment schematic diagram of the control method of image element circuit.
With reference to Fig. 2 and with reference to figure 6b, the control method applied to the image element circuit any embodiment, including：
Step 51：In the driving stage, the first scan line D_GataA and the second scan line D_GataB access high level,
The first transistor M1 and second transistor the M2 conducting, the data wire accessed according to the control pole of the third transistor M3 are believed
First supply voltage ELVDD of number Vdata and third transistor M3 the first pole access produces driving current, described in driving
Light-emitting component 10 is luminous；
Step 52：In the first period of compensated stage, the first sensing signal S_GateA and the second sensing signal S_
GateB is high level, and the sensing unit 30 of the first sensing unit 20 and second is both turned on, the control of the third transistor M3
Pole is passed through described by first sensing unit 20 access data line signal Vdata, the third transistor M3 the second pole
The low level reference voltage signal that second sensing unit 30 is accessed on the sense wire；
Step 53：In the second period of compensated stage, the first sensing signal S_GateA is low level, described second
Sensing signal S_GateB is high level, and first sensing unit 20 disconnects, and second sensing unit 30 turns on, described to deposit
Storing up electricity holds C1 charging completes and both ends floating (floating), the second pole of the third transistor M3 charge to data line signal
Voltage Vdata, the third transistor M3 control pole are coupled to second voltage；
Step 54：In the 3rd period of compensated stage, the first sensing signal S_GateA is low level, described second
Sensing signal S_GateB is high level, and first sensing unit 20 disconnects, and second sensing unit 30 turns on, described
Two-transistor M2 the second pole charges to the data wire letter of third transistor M3 the second pole by second sensing unit 30
Number voltage Vdata；
Step 55：In the 4th period of compensated stage, the first sensing signal S_GateA and the second sensing signal S_
GateB is high level, and the sensing unit 30 of the first sensing unit 20 and second is both turned on, the second of the second transistor M2
The data line signal voltage Vdata of pole is output to external circuit by the sense wire, and the electrical parameter for completing sub-pixel is adopted
Collection.
From above-described embodiment as can be seen that the utility model embodiment provide image element circuit control method, by right
The corresponding control method of pixel circuit design, so as to preferably complete drive control and parameter compensation.
Optionally, with reference to figure 6b, the control sequential of the image element circuit includes the driven sequential and sky of image element circuit
White area, the driven sequential that the driving stage is in the control sequential of the image element circuit, the compensated stage are in
Clear area in the control sequential of the image element circuit；So, complete to compensate in clear area, do not interfere with the normal of light-emitting component
Driving.Optionally, the light-emitting component 10 is Organic Light Emitting Diode OLED.
Optionally, the control method compensates applied to carrier mobility (mobility), and the second voltage is number
The threshold voltage of the third transistor, i.e. Vdata+Vth are added according to line signal voltage.
Optionally, first sensing unit 20 includes the 4th transistor M4, and the control pole of the 4th transistor M4 connects
The first pole and the second pole for entering the first sensing signal S_GateA, the 4th transistor M4 connect the data wire Data respectively
With third transistor M3 control pole；So, the first sensing unit 20, one side energy are realized by using the 4th transistor M4
The collection of enough electrical parameters for preferably completing image element circuit, on the other hand realizes simple in construction, can simplify technique；
Second sensing unit 30 includes the 5th transistor M5, the sense of control pole access second of the 5th transistor M5
The first pole and the second pole for surveying signal S_GateB, the 5th transistor M5 connect the second of the third transistor M3 respectively
Pole and the sense wire；So, the second sensing unit 30 is realized by using the 5th transistor M5, on the one hand can be preferably
The collection of the electrical parameter of image element circuit is completed, on the other hand realizes simple in construction, technique can be simplified.
4th aspect of the utility model embodiment, there is provided a kind of one embodiment of display base plate, can be preferable
Ground carries out real-Time Compensation using GOA circuits.
The display base plate, include any embodiment of foregoing image element circuit.
From above-described embodiment as can be seen that the utility model embodiment provide display base plate, by image element circuit
Increase sets the first sensing unit and the second sensing unit, and first sensing unit is in parallel with the first transistor, institute
It is in parallel with the second transistor to state the second sensing unit；Make the first transistor and the second crystalline substance in the drive circuit of image element circuit
Body pipe completes driven, and the first sensing unit and the second sensing unit complete the collection of the electrical parameter of sub-pixel, so as to
Parameter compensation is carried out, so so that the driving and compensation of sub-pixel can be carried out independently, so as in the driving stage
The respective GOA CLK of the first sensing unit and the second sensing unit of the first transistor and second transistor and compensated stage are done
Into periodic, accomplished to generate Gate signals with GOA as far as possible, in addition accomplished in real time, it is brilliant with the driving of sub-pixel
The Vth and K state of body pipe independently, show the image of desired brightness.
5th aspect of the utility model embodiment, there is provided a kind of one embodiment of display device, can be preferable
Ground carries out real-Time Compensation using GOA circuits.
The display device, including display base plate as previously described.
It should be noted that the display device in the present embodiment can be：Electronic Paper, mobile phone, tablet personal computer, television set,
Any product or part with display function such as notebook computer, DPF, navigator.
From above-described embodiment as can be seen that the utility model embodiment provide display device, by image element circuit
Increase sets the first sensing unit and the second sensing unit, and first sensing unit is in parallel with the first transistor, institute
It is in parallel with the second transistor to state the second sensing unit；Make the first transistor and the second crystalline substance in the drive circuit of image element circuit
Body pipe completes driven, and the first sensing unit and the second sensing unit complete the collection of the electrical parameter of sub-pixel, so as to
Parameter compensation is carried out, so so that the driving and compensation of sub-pixel can be carried out independently, so as in the driving stage
The respective GOA CLK of the first sensing unit and the second sensing unit of the first transistor and second transistor and compensated stage are done
Into periodic, accomplished to generate Gate signals with GOA as far as possible, in addition accomplished in real time, it is brilliant with the driving of sub-pixel
The Vth and K state of body pipe independently, show the image of desired brightness.
In the utility model, term " first ", " second ", " the 3rd ", " the 4th " are only used for describing purpose, and can not manage
Solve to indicate or implying relative importance.Term " multiple " refers to two or more, is limited unless otherwise clear and definite.
Those of ordinary skills in the art should understand that：The foregoing is only specific embodiment of the utility model and
, the utility model is not limited to, it is all within the spirit and principles of the utility model, it is any modification for being made, equivalent
Replace, improve etc., it should be included within the scope of protection of the utility model.
Claims (8)
1. a kind of image element circuit, including the first transistor, second transistor, third transistor, storage capacitance and light-emitting component；Institute
The control pole for stating the first transistor connects the first scan line, and the first pole and the second pole of the first transistor connect data respectively
The control pole of line and third transistor, the second transistor control pole connect the second scan line, and the of the second transistor
One pole and the second pole connect the second pole and the sense wire of the third transistor, the first pole connection of the third transistor respectively
First power end, the first end of the storage capacitance and the second end connect the control pole and described of the third transistor respectively
First pole of two-transistor, the first pole and the second pole of the light-emitting component connect respectively the third transistor the second pole and
Second source end, the sense wire are parallel with sensing line capacitance；
Characterized in that, the image element circuit also includes the first sensing unit and the second sensing unit, first sensing unit
In parallel with the first transistor, second sensing unit is in parallel with the second transistor；First sensing unit and
Second sensing unit is respectively connected to the first sensing signal and the second sensing signal, for being sensed according to the first sensing signal and second
Signal completes the collection of the electrical parameter of sub-pixel.
2. image element circuit according to claim 1, it is characterised in that first sensing unit includes the 4th transistor,
The control pole of 4th transistor connects the first sensing signal line, and the first pole and the second pole of the 4th transistor connect respectively
Connect the control pole of the data wire and third transistor.
3. image element circuit according to claim 1, it is characterised in that second sensing unit includes the 5th transistor,
The control pole of 5th transistor connects the second sensing signal line, and the first pole and the second pole of the 5th transistor connect respectively
Connect the second pole of the third transistor and the sense wire.
4. image element circuit according to claim 1, it is characterised in that first scan line and the second scan line access phase
Same drive signal.
5. image element circuit according to claim 1, it is characterised in that the third transistor is driving transistor.
6. image element circuit according to claim 1, it is characterised in that the luminescence unit is Organic Light Emitting Diode.
7. a kind of display base plate, it is characterised in that including the image element circuit as described in claim any one of 1-6.
8. a kind of display device, it is characterised in that including display base plate as claimed in claim 7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721223457.4U CN207217081U (en) | 2017-09-22 | 2017-09-22 | Image element circuit, display base plate and display device |
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| CN201721223457.4U CN207217081U (en) | 2017-09-22 | 2017-09-22 | Image element circuit, display base plate and display device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107622754A (en) * | 2017-09-22 | 2018-01-23 | 京东方科技集团股份有限公司 | Image element circuit and its control method, display base plate, display device |
| CN111063302A (en) * | 2019-12-17 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Pixel hybrid compensation circuit and pixel hybrid compensation method |
| CN111179838A (en) * | 2020-02-21 | 2020-05-19 | 深圳市华星光电半导体显示技术有限公司 | Pixel circuit, display panel and method for improving low gray scale uniformity of display panel |
-
2017
- 2017-09-22 CN CN201721223457.4U patent/CN207217081U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107622754A (en) * | 2017-09-22 | 2018-01-23 | 京东方科技集团股份有限公司 | Image element circuit and its control method, display base plate, display device |
| WO2019056813A1 (en) * | 2017-09-22 | 2019-03-28 | 京东方科技集团股份有限公司 | Pixel circuit and control method therefor, display substrate and display device |
| US11238796B2 (en) | 2017-09-22 | 2022-02-01 | Boe Technology Group Co., Ltd. | Pixel circuit and control method therefor, display substrate and display device |
| CN107622754B (en) * | 2017-09-22 | 2023-11-14 | 京东方科技集团股份有限公司 | Pixel circuit, control method thereof, display substrate and display device |
| CN111063302A (en) * | 2019-12-17 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Pixel hybrid compensation circuit and pixel hybrid compensation method |
| CN111179838A (en) * | 2020-02-21 | 2020-05-19 | 深圳市华星光电半导体显示技术有限公司 | Pixel circuit, display panel and method for improving low gray scale uniformity of display panel |
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