CN207149480U - A kind of protection switch of power type semiconductor device - Google Patents
A kind of protection switch of power type semiconductor device Download PDFInfo
- Publication number
- CN207149480U CN207149480U CN201720521376.6U CN201720521376U CN207149480U CN 207149480 U CN207149480 U CN 207149480U CN 201720521376 U CN201720521376 U CN 201720521376U CN 207149480 U CN207149480 U CN 207149480U
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- CN
- China
- Prior art keywords
- type semiconductor
- semiconductor device
- power type
- conductor
- protection switch
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Abstract
The utility model discloses a kind of protection switch of power type semiconductor device, including the power type semiconductor device as anchor tip and the disengaging conductor certainly as active joint;The power type semiconductor device is in contact to form contact site with described from disengaging conductor, and contact site is connected by low melting point fixture, and is provided with hot melt adhesive layer on the outside of contact site.The utility model is mainly the characteristic by thermal fusible using low melting point fixture; low melting point fixture is released to the fixation from disengaging conductor and power type semiconductor device; from disengaging conductor and power type semiconductor device isolation; so as to realize disconnecting circuit, power type semiconductor device is protected, prevents from overheating and damaging; also subsequent conditioning circuit or electrical equipment are protected; hot melt adhesive layer is provided with the outside of contact site, auxiliary anchor tip is set up to be follow-up, sets another branch road to lay a good foundation.
Description
Technical field
The utility model belongs to power type semiconductor device arts, more particularly to a kind of protection switch.
Background technology
Power type semiconductor device can be divided into three classes:Ambipolar, monopole type, mixed type, rise in circuit rectification, switch or
The effect such as driving.
Path (or short circuit) will be formed after power type semiconductor device is breakdown, because its own also carries certain resistance
It is anti-, it is substantially increased so can't make to flow through electric current therein, therefore existing frequently-used overload and short circuit protection measures and uncomfortable
For the situation of this failure, due to losing due rectification, switch or driving after the breakdown failure of power type semiconductor device
Deng effect, high-voltage large current is applied on subsequent conditioning circuit or electrical equipment, and appropriate protection can not be provided, so can cause
Subsequent conditioning circuit or electrical equipment damage, on the other hand, now still without adequate solution method.
When the current overload or cooling measure for flowing through power type semiconductor device not at that time, power type semiconductor device can be caused
Part overheats, and long-term and serious overheat can damage power type semiconductor device, present solution method be using protection circuit come
Power type semiconductor device excessively stream is avoided, or power type semiconductor device is reduced by increasing the mode such as area of dissipation, air-cooled
Temperature, but these measures can all increase cost.
Utility model content
The purpose of this utility model is:A kind of protection switch of power type semiconductor device is provided, when power-type is partly led
When after the breakdown failure of body device or overheating, excitation of the power supply to load can be eliminated automatically, solves power type semiconductor device
Itself and subsequent conditioning circuit or electrical equipment can not be protected, it is impossible to from the technical problem of damage.
The technical solution adopted in the utility model is as follows:
A kind of protection switch of power type semiconductor device, including power type semiconductor device and work as anchor tip
Depart from conductor certainly for active joint;The power type semiconductor device is in contact to form contact site with described from disengaging conductor,
Contact site is connected by low melting point fixture, and is provided with hot melt adhesive layer on the outside of contact site.
Further, auxiliary anchor tip is additionally provided with the hot melt adhesive layer, and the auxiliary anchor tip is located at autospasy
From on the disengaging path of conductor.
In use, auxiliary anchor tip is parallel with load;One end after auxiliary anchor tip and load are in parallel is connected with electricity
Source, other end ground connection, and power type semiconductor device are in main road with load, and auxiliary anchor tip is located at branch road;Normal work
When, the power type semiconductor device keeps connection from disengaging conductor with described by contacting;When the power type semiconductor device
Part it is breakdown or overload make own temperature raise after, it is described from depart from conductor depart from power type semiconductor device, and with auxiliary
Anchor tip is connected, and branch road is in the conduction state, and main road is off.
Further, the conductor that departs from certainly is elastic wire or the conductor with release unit or double gold
Belong to any one in piece.
Further, the release unit is any one in expansion joint or weight or spring.
Further, the release unit is arranged on the conductor.
Further, low melting point fixture is any in scolding tin, low-melting alloy, metal synthetic binder or PUR
It is a kind of.
Further, power type semiconductor device and the contact site from disengaging conductor are mutual superimposed structure.
Further, in addition to shell, epoxy resin is perfused between shell and hot melt adhesive layer.
In use, the protection switch is connected between power supply and the load of ground connection;During normal work, the power-type half
Conductor device keeps connection from disengaging conductor with described by contacting, and the switch is in closure state;When the power-type half
Conductor device it is breakdown or overload make own temperature raise after, it is described from depart from conductor depart from power type semiconductor device, institute
Switch is stated to be off.
In summary, by adopting the above-described technical solution, the beneficial effects of the utility model are:
1. general purposes is used as, after power type semiconductor device is breakdown, though electric current therein is flowed through without significantly
Rise, but the own temperature of power type semiconductor device then can be raised significantly, using this feature, the utility model by conductor with
Release unit, low melting point fixture and power type semiconductor device are bonded a kind of temperature detect switch (TDS) (i.e. protection switch), this reality
With the new characteristic mainly using low melting point fixture by thermal fusible, low melting point fixture is released to conductor and power-type half
The fixation of conductor device, now, conductor in the presence of the elastic force or release unit of itself with power type semiconductor device
Separation, so as to realize disconnecting circuit, power type semiconductor device is protected, prevent from overheating and damaging, also protect follow-up electricity
Road or electrical equipment;And hot melt adhesive layer is provided with the outside of contact site, auxiliary anchor tip is set up to be follow-up, sets another branch road to establish
Basis.
2. the auxiliary anchor tip instead of power type semiconductor device is additionally provided with further scheme, in hot melt adhesive layer,
And auxiliary anchor tip is located on the path that conductor flicks, the benefit of this design is, convenient to be designed to auxiliary anchor tip
Another branch road for being connected to power supply, when being advantageous to main road disconnection, branch road closure, the electric current of disconnecting consumers;In small generator
In application of the group with certain capacitive load, even if the exciting current of cut-out generator amature, because the magnetic assist of capacity current acts on,
Generator output voltage can still exceed rated voltage, when high electrical breakdown power type semiconductor device raises its own temperature
Afterwards, power type semiconductor device and conductor be in disengaged position, and conductor is connected conducting with aiding in anchor tip, by generator amature
Coil short circuit, the voltage at electric generator rotor coil both ends is zero, and the output voltage of generator is less than rated voltage, so that connection
Electrical equipment on generating set is protected, from damage.
Brief description of the drawings
Fig. 1 is structural representation-switch and load in series of the present utility model;
Fig. 2 is that structural representation-switch of the present utility model is in parallel with load;
Fig. 3 is that structural representation-conductor of the present utility model is bimetal leaf;
Embodiment
All features disclosed in this specification, can be with any in addition to mutually exclusive feature and/or step
Mode combines.
The utility model is elaborated with reference to Fig. 1~Fig. 3.
Embodiment 1
As general purposes, after power type semiconductor device 2 is breakdown, though electric current therein is flowed through without on significantly
Rise, but the own temperature of power type semiconductor device 2 then can be raised significantly, and using this feature, the utility model will be from disengaging
Conductor 9 and release unit 30, low melting point fixture 8 and power type semiconductor device 2 etc. are bonded a kind of temperature controlled
Switch (i.e. protection switch).
A kind of protection switch of power type semiconductor device, including power type semiconductor device 2 is (as anchor tip-the
One electrode, is connected to power supply) and from depart from conductor 9 (as active joint-second electrode);Power type semiconductor device 2 with
It is in contact to form contact site 22 from conductor 9 is departed from, power type semiconductor device 2 is with the contact site 22 from disengaging conductor 9 by low
Fusing point fixture 8 is fixed.
After power type semiconductor device 2 is breakdown, own temperature raises, high temperature can melt low melting point fixture 8;From
Depart from the fixation that conductor 9 loses low melting point fixture 8, make to depart from certainly in the presence of the elastic force or release unit 30 of itself
Conductor 9 disengages, and eliminates excitation of the power supply 1 to load 5.
The utility model is connected on the major loop of power type semiconductor device 2, refer to the attached drawing 1.
The material of low melting point fixture 8 is any in scolding tin or low-melting alloy or metal synthetic binder or PUR
The fusing point of one kind, low melting point fixture 8 and PUR is less than epoxy resin.
It is elastic wire (such as spring steel wire, beryllium-bronze silk) from conductor 9 is departed from, when low melting point fixture 8
After high temperature melting, it will be separated from conductor 9 is departed from power type semiconductor device 2, and so as to disconnecting circuit, lay down load, with
Avoid damaging because of overheat as the subsequent conditioning circuit or electrical equipment of load.Due to make use of the elastic force of itself from disengaging conductor 9
Acted into disengaging, separately add release unit 30 so being not required here.
Power type semiconductor device 2 is mutual superimposed structure with the contact site 22 from disengaging conductor 9.
Power type semiconductor device 2 from the contact site 22 for departing from conductor 9 with being orderly arranged outside each hot melt adhesive layer 40 and ring
Oxygen tree lipid layer 41, action of the hot melt adhesive layer 40 because departing from power type semiconductor device 2 after high temperature melting for conductor provide activity
Space.
In said structure, from depart from conductor 9 zone of action hot melt adhesive layer 40 cover, instead of needs be provided for every
From housing trouble (need not separately make mould), this for postorder encapsulation or embedding (such as epoxy resin layer 41) bring greatly
It is convenient, simplify construction technology, encapsulation or embedding structure, save cost.Power type semiconductor device 2 it is breakdown or overload after
Caused high temperature, the hotmelt melts of hot melt adhesive layer will be made, be changed into activity space, be that switch activity joint (departs from conductor certainly
9) disengagement provides space.
In last shaping, will be covered first with hot melt adhesive layer 40 from the zone of action for departing from conductor 9, such as by two electricity
Pole (first electrode and second electrode), low melting point fixture 8 and release unit covering, then epoxy resin is poured into whole switch
Shell and hot melt adhesive layer 40 between, formed epoxy resin layer 41, to reach preferable insulating properties.
In use, the protection switch is connected on power supply 1 and is grounded between 6 load 5;During normal work, the power
Type semiconductor devices 2 keeps connection from disengaging conductor 9 with described by contacting, and the switch is in closure state;When the work(
Rate type semiconductor devices 2 it is breakdown or overload make own temperature raise after, it is described from depart from conductor 9 depart from power type semiconductor
Device 2, the switch are off, and cut off circuit, and the electric current for making to flow through the load 5 is zero.
Embodiment 2
Difference with embodiment 1 is, is the conductor with release unit 30 from conductor 9 is departed from, release unit 30 is used for
Power type semiconductor device 2 is set to be separated with from disengaging conductor 9.Release unit 30 is expansion joint, i.e., a kind of bullet that can freely stretch
Property compensating element, the additional stress caused by temperature difference and mechanical oscillation is can compensate for, for when low melting point fixture 8 is because of high temperature melting
After change, power type semiconductor device 2 is separated with from disengaging conductor 9, so as to disconnecting circuit, lays down load, refer to the attached drawing 2.
Release unit 30 is arranged at from departing near contact site 22 of the conductor 9 with power type semiconductor device 2, is specifically set
It is placed in from disengaging conductor 9.
In the application of the certain capacitive load of small power generation unit band, even if the exciting current of cut-out generator amature, by
Acted in the magnetic assist of capacity current, generator output voltage can still exceed rated voltage, when high electrical breakdown power type semiconductor
After device 2 raises its own temperature, power type semiconductor device 2 is led with being in disengaged position from disengaging conductor 9 from departing from
Body 9 is connected conducting with auxiliary anchor tip 13, and by electric generator rotor coil short circuit, the voltage at electric generator rotor coil both ends is
Zero, the output voltage of generator is less than rated voltage, so that the electrical equipment being connected on generating set is protected, from damage
It is bad.
Embodiment 3
Difference with embodiment 1 or 2 is that release unit 30 is weight, is arranged at from disengaging conductor 9 and power-type half
Near the contact site 22 of conductor device 2, expansion joint is functioned as, for after low melting point fixture 8 is because of high temperature melting, profit
With the Action of Gravity Field of weight, power type semiconductor device 2 is separated with from disengaging conductor 9, so as to disconnecting circuit, lays down load,
To avoid power type semiconductor device 2 from being damaged because of overheat.Release unit 30 can also be spring etc., and it functions as expansion
Section and weight.
Embodiment 4
Difference with embodiment 1 or 2 or 3 is, auxiliary anchor tip 13 is additionally provided with hot melt adhesive layer 40, and aids in fixing
Joint 13 is located at from the path that disengaging conductor 9 flicks.Anchor tip 13 is aided in be used as the 3rd electrode, the 3rd electrode is replaced original
First electrode so that the 3rd electrode and second electrode close, refer to the attached drawing 2.
In use, auxiliary anchor tip 13 is parallel with load 5;Aid in anchor tip 13 and load one end company after 5 parallel connections
It is connected to power supply 1, other end ground connection, and power type semiconductor device 2 and is in main road with load 5, auxiliary anchor tip 13 is positioned at branch
Road;During normal work, the power type semiconductor device 2 keeps connection from disengaging conductor 9 with described by contacting;When the work(
Rate type semiconductor devices 2 it is breakdown or overload make own temperature raise after, it is described from depart from conductor 9 depart from power type semiconductor
Device 2, and be connected with auxiliary anchor tip 13, branch road is in the conduction state, and main road is off, and load 5 is bypassed
Fall, the voltage for making 5 both ends of the load is zero.
Embodiment 5
Difference with embodiment 1 or 2 or 3 or 4 is, is bimetal leaf from conductor 9 is departed from.Due to power type semiconductor device
Part 2 can also produce high temperature when overloading, can be in power type semiconductor device 2 by the bimetal leaf from suitable control temperature
Before high temperature failure, departed from using bimetal leaf heated bending with power type semiconductor device 2, so as to disconnecting circuit, laid down
Load, to avoid power type semiconductor device 2 from being damaged because of overheat, eliminates excitation of the power supply to load, solves work(automatically
Rate type semiconductor devices itself and subsequent conditioning circuit or electrical equipment can not be protected, it is impossible to from the technical problem of damage, bimetallic
Sector-meeting automatically resets after circuit recovers normal because of cooling.
In above-mentioned all embodiments, semiconductor crystal, nead frame inside power type semiconductor device 2, outside draws
Pin, the pad being connected with pin etc. can serve as itself and the contact site from disengaging conductor 9.
The selection of low melting point fixture 8 should be required to select its fusion temperature according to the protection to subsequent conditioning circuit, with full
Sufficient subsequent conditioning circuit it is advanced, both when or delay protection needs.
Claims (10)
1. a kind of protection switch of power type semiconductor device, it is characterised in that partly led including the power-type as anchor tip
Body device (2) and the disengaging conductor (9) certainly as active joint;The power type semiconductor device (2) is led with described from disengaging
Body (9) is in contact to form contact site (22), and contact site (22) is connected by low melting point fixture (8), and contact site (22)
Outside is provided with hot melt adhesive layer (40).
A kind of 2. protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that the hot melt adhesive layer
(40) auxiliary anchor tip (13) is additionally provided with, and the auxiliary anchor tip (13) is located at from the avenrage of withdrawal for departing from conductor (9)
On footpath.
3. a kind of protection switch of power type semiconductor device as claimed in claim 2, it is characterised in that in use, auxiliary
Anchor tip (13) is parallel with load (5);One end after auxiliary anchor tip (13) and load (5) are in parallel is connected with power supply (1),
The other end is grounded, and power type semiconductor device (2) is in main road with load (5), and auxiliary anchor tip (13) is located at branch road;Just
Often during work, the power type semiconductor device (2) keeps connection from disengaging conductor (9) with described by contacting;When the work(
It is described to depart from power-type half from departing from conductor (9) after rate type semiconductor devices (2) is breakdown or overload raises own temperature
Conductor device (2), and be connected with auxiliary anchor tip (13), branch road is in the conduction state, and main road is off.
4. a kind of protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that described to be led from disengaging
Body (9) is any one in elastic wire or conductor or bimetal leaf with release unit (30).
A kind of 5. protection switch of power type semiconductor device as claimed in claim 4, it is characterised in that the release unit
For any one in expansion joint or weight or spring.
A kind of 6. protection switch of power type semiconductor device as claimed in claim 4, it is characterised in that the release unit
It is arranged on the conductor.
A kind of 7. protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that low melting point fixture
(8) it is any one in scolding tin, low-melting alloy, metal synthetic binder or PUR.
A kind of 8. protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that power type semiconductor
Device (2) is mutually superimposed structure with the contact site (22) from disengaging conductor (9).
9. the protection switch of a kind of power type semiconductor device as described in any one of claim 1~8, it is characterised in that also
Including shell, epoxy resin is perfused between shell and hot melt adhesive layer (40).
10. a kind of protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that in use, described
Protection switch is connected between the load (5) of power supply (1) and ground connection;During normal work, the power type semiconductor device (2) with
Described to keep connection by contacting from disengaging conductor (9), the switch is in closure state;When the power type semiconductor device
(2) it is described to depart from from disengaging conductor (9) in power type semiconductor device (2), institute after breakdown or overload raises own temperature
Switch is stated to be off.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720521376.6U CN207149480U (en) | 2017-05-11 | 2017-05-11 | A kind of protection switch of power type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201720521376.6U CN207149480U (en) | 2017-05-11 | 2017-05-11 | A kind of protection switch of power type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207149480U true CN207149480U (en) | 2018-03-27 |
Family
ID=61658294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201720521376.6U Expired - Fee Related CN207149480U (en) | 2017-05-11 | 2017-05-11 | A kind of protection switch of power type semiconductor device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN207149480U (en) |
-
2017
- 2017-05-11 CN CN201720521376.6U patent/CN207149480U/en not_active Expired - Fee Related
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180327 |