CN207149480U - A kind of protection switch of power type semiconductor device - Google Patents

Abstract

The utility model discloses a kind of protection switch of power type semiconductor device, including the power type semiconductor device as anchor tip and the disengaging conductor certainly as active joint；The power type semiconductor device is in contact to form contact site with described from disengaging conductor, and contact site is connected by low melting point fixture, and is provided with hot melt adhesive layer on the outside of contact site.The utility model is mainly the characteristic by thermal fusible using low melting point fixture; low melting point fixture is released to the fixation from disengaging conductor and power type semiconductor device; from disengaging conductor and power type semiconductor device isolation; so as to realize disconnecting circuit, power type semiconductor device is protected, prevents from overheating and damaging; also subsequent conditioning circuit or electrical equipment are protected; hot melt adhesive layer is provided with the outside of contact site, auxiliary anchor tip is set up to be follow-up, sets another branch road to lay a good foundation.

Description

A kind of protection switch of power type semiconductor device

Technical field

The utility model belongs to power type semiconductor device arts, more particularly to a kind of protection switch.

Background technology

Power type semiconductor device can be divided into three classes：Ambipolar, monopole type, mixed type, rise in circuit rectification, switch or The effect such as driving.

Path (or short circuit) will be formed after power type semiconductor device is breakdown, because its own also carries certain resistance It is anti-, it is substantially increased so can't make to flow through electric current therein, therefore existing frequently-used overload and short circuit protection measures and uncomfortable For the situation of this failure, due to losing due rectification, switch or driving after the breakdown failure of power type semiconductor device Deng effect, high-voltage large current is applied on subsequent conditioning circuit or electrical equipment, and appropriate protection can not be provided, so can cause Subsequent conditioning circuit or electrical equipment damage, on the other hand, now still without adequate solution method.

When the current overload or cooling measure for flowing through power type semiconductor device not at that time, power type semiconductor device can be caused Part overheats, and long-term and serious overheat can damage power type semiconductor device, present solution method be using protection circuit come Power type semiconductor device excessively stream is avoided, or power type semiconductor device is reduced by increasing the mode such as area of dissipation, air-cooled Temperature, but these measures can all increase cost.

Utility model content

The purpose of this utility model is：A kind of protection switch of power type semiconductor device is provided, when power-type is partly led When after the breakdown failure of body device or overheating, excitation of the power supply to load can be eliminated automatically, solves power type semiconductor device Itself and subsequent conditioning circuit or electrical equipment can not be protected, it is impossible to from the technical problem of damage.

The technical solution adopted in the utility model is as follows：

A kind of protection switch of power type semiconductor device, including power type semiconductor device and work as anchor tip Depart from conductor certainly for active joint；The power type semiconductor device is in contact to form contact site with described from disengaging conductor, Contact site is connected by low melting point fixture, and is provided with hot melt adhesive layer on the outside of contact site.

Further, auxiliary anchor tip is additionally provided with the hot melt adhesive layer, and the auxiliary anchor tip is located at autospasy From on the disengaging path of conductor.

In use, auxiliary anchor tip is parallel with load；One end after auxiliary anchor tip and load are in parallel is connected with electricity Source, other end ground connection, and power type semiconductor device are in main road with load, and auxiliary anchor tip is located at branch road；Normal work When, the power type semiconductor device keeps connection from disengaging conductor with described by contacting；When the power type semiconductor device Part it is breakdown or overload make own temperature raise after, it is described from depart from conductor depart from power type semiconductor device, and with auxiliary Anchor tip is connected, and branch road is in the conduction state, and main road is off.

Further, the conductor that departs from certainly is elastic wire or the conductor with release unit or double gold Belong to any one in piece.

Further, the release unit is any one in expansion joint or weight or spring.

Further, the release unit is arranged on the conductor.

Further, low melting point fixture is any in scolding tin, low-melting alloy, metal synthetic binder or PUR It is a kind of.

Further, power type semiconductor device and the contact site from disengaging conductor are mutual superimposed structure.

Further, in addition to shell, epoxy resin is perfused between shell and hot melt adhesive layer.

In use, the protection switch is connected between power supply and the load of ground connection；During normal work, the power-type half Conductor device keeps connection from disengaging conductor with described by contacting, and the switch is in closure state；When the power-type half Conductor device it is breakdown or overload make own temperature raise after, it is described from depart from conductor depart from power type semiconductor device, institute Switch is stated to be off.

In summary, by adopting the above-described technical solution, the beneficial effects of the utility model are：

1. general purposes is used as, after power type semiconductor device is breakdown, though electric current therein is flowed through without significantly Rise, but the own temperature of power type semiconductor device then can be raised significantly, using this feature, the utility model by conductor with Release unit, low melting point fixture and power type semiconductor device are bonded a kind of temperature detect switch (TDS) (i.e. protection switch), this reality With the new characteristic mainly using low melting point fixture by thermal fusible, low melting point fixture is released to conductor and power-type half The fixation of conductor device, now, conductor in the presence of the elastic force or release unit of itself with power type semiconductor device Separation, so as to realize disconnecting circuit, power type semiconductor device is protected, prevent from overheating and damaging, also protect follow-up electricity Road or electrical equipment；And hot melt adhesive layer is provided with the outside of contact site, auxiliary anchor tip is set up to be follow-up, sets another branch road to establish Basis.

2. the auxiliary anchor tip instead of power type semiconductor device is additionally provided with further scheme, in hot melt adhesive layer, And auxiliary anchor tip is located on the path that conductor flicks, the benefit of this design is, convenient to be designed to auxiliary anchor tip Another branch road for being connected to power supply, when being advantageous to main road disconnection, branch road closure, the electric current of disconnecting consumers；In small generator In application of the group with certain capacitive load, even if the exciting current of cut-out generator amature, because the magnetic assist of capacity current acts on, Generator output voltage can still exceed rated voltage, when high electrical breakdown power type semiconductor device raises its own temperature Afterwards, power type semiconductor device and conductor be in disengaged position, and conductor is connected conducting with aiding in anchor tip, by generator amature Coil short circuit, the voltage at electric generator rotor coil both ends is zero, and the output voltage of generator is less than rated voltage, so that connection Electrical equipment on generating set is protected, from damage.

Brief description of the drawings

Fig. 1 is structural representation-switch and load in series of the present utility model；

Fig. 2 is that structural representation-switch of the present utility model is in parallel with load；

Fig. 3 is that structural representation-conductor of the present utility model is bimetal leaf；

Embodiment

All features disclosed in this specification, can be with any in addition to mutually exclusive feature and/or step Mode combines.

The utility model is elaborated with reference to Fig. 1~Fig. 3.

Embodiment 1

As general purposes, after power type semiconductor device 2 is breakdown, though electric current therein is flowed through without on significantly Rise, but the own temperature of power type semiconductor device 2 then can be raised significantly, and using this feature, the utility model will be from disengaging Conductor 9 and release unit 30, low melting point fixture 8 and power type semiconductor device 2 etc. are bonded a kind of temperature controlled Switch (i.e. protection switch).

A kind of protection switch of power type semiconductor device, including power type semiconductor device 2 is (as anchor tip-the One electrode, is connected to power supply) and from depart from conductor 9 (as active joint-second electrode)；Power type semiconductor device 2 with It is in contact to form contact site 22 from conductor 9 is departed from, power type semiconductor device 2 is with the contact site 22 from disengaging conductor 9 by low Fusing point fixture 8 is fixed.

After power type semiconductor device 2 is breakdown, own temperature raises, high temperature can melt low melting point fixture 8；From Depart from the fixation that conductor 9 loses low melting point fixture 8, make to depart from certainly in the presence of the elastic force or release unit 30 of itself Conductor 9 disengages, and eliminates excitation of the power supply 1 to load 5.

The utility model is connected on the major loop of power type semiconductor device 2, refer to the attached drawing 1.

The material of low melting point fixture 8 is any in scolding tin or low-melting alloy or metal synthetic binder or PUR The fusing point of one kind, low melting point fixture 8 and PUR is less than epoxy resin.

It is elastic wire (such as spring steel wire, beryllium-bronze silk) from conductor 9 is departed from, when low melting point fixture 8 After high temperature melting, it will be separated from conductor 9 is departed from power type semiconductor device 2, and so as to disconnecting circuit, lay down load, with Avoid damaging because of overheat as the subsequent conditioning circuit or electrical equipment of load.Due to make use of the elastic force of itself from disengaging conductor 9 Acted into disengaging, separately add release unit 30 so being not required here.

Power type semiconductor device 2 is mutual superimposed structure with the contact site 22 from disengaging conductor 9.

Power type semiconductor device 2 from the contact site 22 for departing from conductor 9 with being orderly arranged outside each hot melt adhesive layer 40 and ring Oxygen tree lipid layer 41, action of the hot melt adhesive layer 40 because departing from power type semiconductor device 2 after high temperature melting for conductor provide activity Space.

In said structure, from depart from conductor 9 zone of action hot melt adhesive layer 40 cover, instead of needs be provided for every From housing trouble (need not separately make mould), this for postorder encapsulation or embedding (such as epoxy resin layer 41) bring greatly It is convenient, simplify construction technology, encapsulation or embedding structure, save cost.Power type semiconductor device 2 it is breakdown or overload after Caused high temperature, the hotmelt melts of hot melt adhesive layer will be made, be changed into activity space, be that switch activity joint (departs from conductor certainly 9) disengagement provides space.

In last shaping, will be covered first with hot melt adhesive layer 40 from the zone of action for departing from conductor 9, such as by two electricity Pole (first electrode and second electrode), low melting point fixture 8 and release unit covering, then epoxy resin is poured into whole switch Shell and hot melt adhesive layer 40 between, formed epoxy resin layer 41, to reach preferable insulating properties.

In use, the protection switch is connected on power supply 1 and is grounded between 6 load 5；During normal work, the power Type semiconductor devices 2 keeps connection from disengaging conductor 9 with described by contacting, and the switch is in closure state；When the work( Rate type semiconductor devices 2 it is breakdown or overload make own temperature raise after, it is described from depart from conductor 9 depart from power type semiconductor Device 2, the switch are off, and cut off circuit, and the electric current for making to flow through the load 5 is zero.

Embodiment 2

Difference with embodiment 1 is, is the conductor with release unit 30 from conductor 9 is departed from, release unit 30 is used for Power type semiconductor device 2 is set to be separated with from disengaging conductor 9.Release unit 30 is expansion joint, i.e., a kind of bullet that can freely stretch Property compensating element, the additional stress caused by temperature difference and mechanical oscillation is can compensate for, for when low melting point fixture 8 is because of high temperature melting After change, power type semiconductor device 2 is separated with from disengaging conductor 9, so as to disconnecting circuit, lays down load, refer to the attached drawing 2.

Release unit 30 is arranged at from departing near contact site 22 of the conductor 9 with power type semiconductor device 2, is specifically set It is placed in from disengaging conductor 9.

In the application of the certain capacitive load of small power generation unit band, even if the exciting current of cut-out generator amature, by Acted in the magnetic assist of capacity current, generator output voltage can still exceed rated voltage, when high electrical breakdown power type semiconductor After device 2 raises its own temperature, power type semiconductor device 2 is led with being in disengaged position from disengaging conductor 9 from departing from Body 9 is connected conducting with auxiliary anchor tip 13, and by electric generator rotor coil short circuit, the voltage at electric generator rotor coil both ends is Zero, the output voltage of generator is less than rated voltage, so that the electrical equipment being connected on generating set is protected, from damage It is bad.

Embodiment 3

Difference with embodiment 1 or 2 is that release unit 30 is weight, is arranged at from disengaging conductor 9 and power-type half Near the contact site 22 of conductor device 2, expansion joint is functioned as, for after low melting point fixture 8 is because of high temperature melting, profit With the Action of Gravity Field of weight, power type semiconductor device 2 is separated with from disengaging conductor 9, so as to disconnecting circuit, lays down load, To avoid power type semiconductor device 2 from being damaged because of overheat.Release unit 30 can also be spring etc., and it functions as expansion Section and weight.

Embodiment 4

Difference with embodiment 1 or 2 or 3 is, auxiliary anchor tip 13 is additionally provided with hot melt adhesive layer 40, and aids in fixing Joint 13 is located at from the path that disengaging conductor 9 flicks.Anchor tip 13 is aided in be used as the 3rd electrode, the 3rd electrode is replaced original First electrode so that the 3rd electrode and second electrode close, refer to the attached drawing 2.

In use, auxiliary anchor tip 13 is parallel with load 5；Aid in anchor tip 13 and load one end company after 5 parallel connections It is connected to power supply 1, other end ground connection, and power type semiconductor device 2 and is in main road with load 5, auxiliary anchor tip 13 is positioned at branch Road；During normal work, the power type semiconductor device 2 keeps connection from disengaging conductor 9 with described by contacting；When the work( Rate type semiconductor devices 2 it is breakdown or overload make own temperature raise after, it is described from depart from conductor 9 depart from power type semiconductor Device 2, and be connected with auxiliary anchor tip 13, branch road is in the conduction state, and main road is off, and load 5 is bypassed Fall, the voltage for making 5 both ends of the load is zero.

Embodiment 5

Difference with embodiment 1 or 2 or 3 or 4 is, is bimetal leaf from conductor 9 is departed from.Due to power type semiconductor device Part 2 can also produce high temperature when overloading, can be in power type semiconductor device 2 by the bimetal leaf from suitable control temperature Before high temperature failure, departed from using bimetal leaf heated bending with power type semiconductor device 2, so as to disconnecting circuit, laid down Load, to avoid power type semiconductor device 2 from being damaged because of overheat, eliminates excitation of the power supply to load, solves work(automatically Rate type semiconductor devices itself and subsequent conditioning circuit or electrical equipment can not be protected, it is impossible to from the technical problem of damage, bimetallic Sector-meeting automatically resets after circuit recovers normal because of cooling.

In above-mentioned all embodiments, semiconductor crystal, nead frame inside power type semiconductor device 2, outside draws Pin, the pad being connected with pin etc. can serve as itself and the contact site from disengaging conductor 9.

The selection of low melting point fixture 8 should be required to select its fusion temperature according to the protection to subsequent conditioning circuit, with full Sufficient subsequent conditioning circuit it is advanced, both when or delay protection needs.

Claims (10)

1. a kind of protection switch of power type semiconductor device, it is characterised in that partly led including the power-type as anchor tip Body device (2) and the disengaging conductor (9) certainly as active joint；The power type semiconductor device (2) is led with described from disengaging Body (9) is in contact to form contact site (22), and contact site (22) is connected by low melting point fixture (8), and contact site (22) Outside is provided with hot melt adhesive layer (40).

A kind of 2. protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that the hot melt adhesive layer (40) auxiliary anchor tip (13) is additionally provided with, and the auxiliary anchor tip (13) is located at from the avenrage of withdrawal for departing from conductor (9) On footpath.

3. a kind of protection switch of power type semiconductor device as claimed in claim 2, it is characterised in that in use, auxiliary Anchor tip (13) is parallel with load (5)；One end after auxiliary anchor tip (13) and load (5) are in parallel is connected with power supply (1), The other end is grounded, and power type semiconductor device (2) is in main road with load (5), and auxiliary anchor tip (13) is located at branch road；Just Often during work, the power type semiconductor device (2) keeps connection from disengaging conductor (9) with described by contacting；When the work( It is described to depart from power-type half from departing from conductor (9) after rate type semiconductor devices (2) is breakdown or overload raises own temperature Conductor device (2), and be connected with auxiliary anchor tip (13), branch road is in the conduction state, and main road is off.

4. a kind of protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that described to be led from disengaging Body (9) is any one in elastic wire or conductor or bimetal leaf with release unit (30).

A kind of 5. protection switch of power type semiconductor device as claimed in claim 4, it is characterised in that the release unit For any one in expansion joint or weight or spring.

A kind of 6. protection switch of power type semiconductor device as claimed in claim 4, it is characterised in that the release unit It is arranged on the conductor.

A kind of 7. protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that low melting point fixture (8) it is any one in scolding tin, low-melting alloy, metal synthetic binder or PUR.

A kind of 8. protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that power type semiconductor Device (2) is mutually superimposed structure with the contact site (22) from disengaging conductor (9).

9. the protection switch of a kind of power type semiconductor device as described in any one of claim 1~8, it is characterised in that also Including shell, epoxy resin is perfused between shell and hot melt adhesive layer (40).

10. a kind of protection switch of power type semiconductor device as claimed in claim 1, it is characterised in that in use, described Protection switch is connected between the load (5) of power supply (1) and ground connection；During normal work, the power type semiconductor device (2) with Described to keep connection by contacting from disengaging conductor (9), the switch is in closure state；When the power type semiconductor device (2) it is described to depart from from disengaging conductor (9) in power type semiconductor device (2), institute after breakdown or overload raises own temperature Switch is stated to be off.