CN207082516U - Semiconductor wafer plasma etching apparatus - Google Patents
Semiconductor wafer plasma etching apparatus Download PDFInfo
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- CN207082516U CN207082516U CN201720989277.0U CN201720989277U CN207082516U CN 207082516 U CN207082516 U CN 207082516U CN 201720989277 U CN201720989277 U CN 201720989277U CN 207082516 U CN207082516 U CN 207082516U
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- main body
- flow orifice
- semiconductor wafer
- plasma etching
- etching apparatus
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000001020 plasma etching Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 6
- 230000000994 depressogenic effect Effects 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 2
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical group C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 239000007921 spray Substances 0.000 description 8
- 238000007789 sealing Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The utility model discloses a kind of semiconductor wafer plasma etching apparatus, including etched cavity and air jet system, etched cavity is in hollow structure, its upper end is open, dielectric sheet is configured with open-mouth, air jet system is vertically located on dielectric sheet, and with being connected inside etched cavity, the upper surface of dielectric sheet is provided with TCP coils for its lower end；Support base is provided with etched cavity, lower electrode plate is horizontally installed with support base；Air jet system includes the first main body and the second main body, and the two is process by sapphire material；First main body is provided with injecting hole a and injecting hole b；Flow orifice c and flow orifice d is provided with second main body, flow orifice c runs through the second main body upper and lower ends, and the lower end circumference outer rim of the second main body is provided with least one tap being connected with flow orifice d.The resistance to overturning of Etaching device is improved, reduces the proportion of goods damageds of wherein air jet system, while improves the yields of etching products, reduces device production and processing difficulty, extends the service life of device.
Description
Technical field
The utility model belongs to semiconductor wafer etch engineering device technique field, and in particular to a kind of semiconductor wafer plasma
Etaching device.
Background technology
Plasma gas injection apparatus is mainly for the production of semiconductor wafer, version when making the wafer surface form tiny loop
Carve the device of engineering.Its bottom can have multiple gas jetting holes, and can be combined with plasma electrode, make plasma gas
Sprayed in cabin uniformly, air jet system is the consumption-type core part for determining semiconductor production efficiency.
Gas injection apparatus employed in conventional Etaching device is mainly based on the injection apparatus of quartz material, in length
Easily cause the tapered deformation of jet pore cross section because of the corrosion of plasma gas during phase use, so as to cause to spray into
Plasma gas in mechanical machine cabin can not uniformly spray, but be sprayed in the form of irregular.Should be in crystalline substance
Uniformly injection forms finished product on piece surface, is finally but formed by the uneven localized ejection of plasma gas, it will cause chip
Production efficiency is low, the problem of triggering substantial amounts of defect ware.
And the integrally formed mode of production of air jet system generally use in conventional etch device, increase also occurs in this
Difficulty of processing, extend process time, the problems such as increasing production cost, also have and a small number of injection apparatus is made using sapphire material
, but because binding site is passed through frequently with the mode connected in bottom, be so easy to rupture in use,
The service life of device can be substantially reduced.
Utility model content
To solve above technical problem, the utility model provides a kind of semiconductor wafer plasma etching apparatus, dropped
While low production cost, the service life of Etaching device is effectively improved, reduces the consuming cost of Etaching device, while ensures to spray
Enter the uniformity of gas, so as to improve wafer manufacture efficiency, and yields.
To achieve the above object, technical solutions of the utility model are as follows：
A kind of semiconductor wafer plasma etching apparatus, including etched cavity and air jet system, its key are：The etching
Chamber is in hollow structure, and its upper end is open, the dielectric sheet adaptable with it is configured with open-mouth, the air jet system is vertically worn
On dielectric sheet, with being connected inside etched cavity, the upper surface of dielectric sheet is provided with TCP coils for its lower end；
The support base for being used for supporting semiconductor wafer is provided with the etched cavity, bottom electricity is horizontally installed with the support base
Pole plate；
The air jet system includes the first main body and the second main body, and the two is process by sapphire material；
It is axially arranged with flow orifice a and flow orifice b to the first main body interior edge, and wherein flow orifice a is through the first main body
Upper and lower ends, the first body outer wall be provided with respectively with flow orifice a and flow orifice b the injecting hole a connected and injecting hole b；
It is axially arranged with flow orifice c and flow orifice d to the second main body interior edge, and wherein flow orifice c is in the second main body
Lower both ends, the lower end circumference outer rim of the second main body are provided with least one tap being connected with flow orifice d；
The upper end of second main body is fixedly connected with the lower end of the first main body, and flow orifice c connects with flow orifice a, stream
Dynamic hole d connects with flow orifice b.
Using above scheme, the air jet system in Etaching device uses to be made from sapphire material, so as to improve spray
Corrosion resistant performance and high-temperature stability at device of air puff prot, it can effectively prevent that also flow orifice is corroded tap, so as to
Ensure the uniformity of ejection gas, improve product yield, while use parts processing, the modes of two sections of connections, reduce processing
Difficulty, while ensure the fastness of junction, Etaching device entirety etching efficiency is improved, extends the service life of device.
As preferred：The support base is in the form of annular discs, and it is raised to be provided with first extended straight up along its axis thereon
Portion, its outer rim are provided with the second lug boss extended straight up, and the downside of the lower electrode plate is provided with raised with first respectively
The first depressed part and the second depressed part that portion and the second lug boss are adapted, the first lug boss are embedded in the first depressed part, and second
Lug boss is embedded in the second depressed part.Using above structure, lower electrode plate is preferably fastened on support base, reduce
It vibrates skew, further improves the etching quality of Etaching device.
As preferred：The radial outside of the lower electrode plate is arranged with the edge ring of isolation material.Using above structure,
Improve the coupling condition of lower electrode, so as to guide plasma gas being applied on semiconductor wafer evenly, improve etching
Quality.
As preferred：The TCP coils are coaxially disposed in concentric structure and with air jet system., can using above structure
Make TCP coils connected with RF power supply produce magnetic field area coverage it is bigger, and intensity with, so as to induce lower electrode produce ion
It is uniformly distributed, is advantageous to further improve the etching quality of device.
As preferred：The flow orifice a and flow orifice c are set along the axis of the first main body and the second main body respectively, stream
Dynamic hole a and flow orifice c internal diameters are in identical hollow circuit cylinder cavernous structure；
The flow orifice b and flow orifice a is coaxially disposed, and the radial outside in flow orifice a, flow orifice d and flow orifice c
It is coaxially disposed, and the radial outside in flow orifice c, flow orifice b and flow orifice d are in the same size, structure annular in shape.Use with
Upper structure, convenient processing, and it is more beneficial for the uniform injection of gas.
To be further ensured that the gas sprayed out of flow orifice d is uniformly entered in etched cavity, the tap is in a ring
Array is evenly distributed on the lower end of the second main body.
As preferred：The upper end wall of first main body is provided with the annular groove to lower recess, and the annular groove is in flow orifice a
Outside, the configuration closure adaptable with it in annular groove.Using above structure, it is ensured that the gas in flow orifice a can only be down
Spray into etched cavity, so as to ensure etching when air jet system and etched cavity between sealing.
As preferred：First main body and the second main body are in cylindrical structure, and the diameter of the first main body is more than the
The diameter of two main bodys.Using above structure, step is formed between two main bodys, device can be facilitated to be fixed on the jet of etched cavity
Mouth position.
As preferred：The first main body lower end, which has, extends axially upward cylindrical groove along it, the groove
Diameter and the diameter of the second main body are adapted, and the upper end of second main body is embedded in the groove.Using above structure, increase by two
Person's connection area, the sealing of junction, and the fastness of connection can be effectively improved.
When being connected to further facilitate the gas injection tube head of outside with two injecting holes, contact surface is convenient to be sealed, and described first
Body outer wall is provided with deep gouge in injecting hole a and injecting hole b position, and the deep gouge bottom wall is smooth flat structure.
Compared with prior art, the beneficial effects of the utility model are：
Using semiconductor wafer plasma etching apparatus provided by the utility model, the monolithic stability of Etaching device is improved
Property, the proportion of goods damageds of wherein air jet system are reduced, while the yields of etching products is improved, device production and processing difficulty is reduced, is prolonged
The service life of device is grown.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model；
Fig. 2 is the structural representation of support base；
Fig. 3 is the structural representation of lower electrode plate；
Fig. 4 is the front view of this air jet system；
Fig. 5 is the top view of air jet system shown in Fig. 4；
Fig. 6 is the internal structure schematic diagram of embodiment illustrated in fig. 4；
Fig. 7 is the first main body and the second main body connection diagram；
Fig. 8 is partial enlarged drawing at a in Fig. 1.
Embodiment
The utility model is described in further detail with accompanying drawing with reference to embodiments.
It is main to include into hollow rectangular parallelepiped structure referring to figs. 1 to the semiconductor wafer plasma etching apparatus shown in Fig. 8
Etched cavity 1, the open topped of etched cavity 1, dielectric sheet 3 made of insulating materials are movably installed with, jet is equipped with dielectric sheet 3
Device 2, axis of the air jet system 2 along dielectric sheet 3 are set straight down, and its lower end surface flushes with the bottom wall of dielectric sheet 3, really
Air jet system 2 is protected to connect with the inside of etched cavity 1.
The upper surface of dielectric sheet 3 is provided with TCP coils 4, and TCP coils 4 are coaxially disposed with air jet system 2, and makes TCP as far as possible
Coil 4 is laid on dielectric sheet 3, reduces the accumulation in height.
It is horizontal in etched cavity 1 to be provided with grid 11, the groove that gas passes through radially is evenly distributed with grid 11, simultaneously
The inside of etched cavity 1 is divided into upper chamber 12 and lower chambers 13 by grid 11, and grid 11 can be such that gas further uniformly enters down
In chamber 13, the venthole 10 that the gas after being completed for excessive gas or etching is discharged is offered in the side wall of lower chambers 13；
The support base 5 for engaging support lower electrode plate 6 is additionally provided with lower chambers 13, as shown in Figures 2 and 3, support
The top structure in the form of annular discs of seat 5, the first lug boss 50 extended straight up is provided with along its axis, and its circumferential outer rim is provided with
The second lug boss 52 extended straight up, also substantially cylindrical structure, its lower surface have and first lower electrode plate 6
The first adaptable depressed part 60 of lug boss 50, and the second depressed part 61 being adapted with the second lug boss 52, lower electrode
Plate 6 is put into from top, makes the first lug boss 50 and the first depressed part 60 mutually chimeric, the second lug boss 52 and the second depressed part 61
It is mutually chimeric, so as to realize the circumferentially fixed of lower electrode plate 6, prevent from offseting.
The outer rim of lower electrode plate 6 is arranged with edge ring 52, and the outer rim top of lower electrode plate 6 has the ring to lower recess
Shape sinks platform structure, and the upper end of edge ring 52 has to be adapted to the horizontal-extending extension in inner side, extension with heavy platform structure, can be with
The heavy platform position of annular is just enclosed on, the bottom of edge ring 52 is fixed on support base 5, so can be achieved to lower electrode plate 6
Axial restraint, reduce jitter error, further improve device reliability.
Edge ring 52 can use yittrium oxide or quartz lamp material be made, and may further ensure that Induced Plasma evenly
It is applied on semiconductor wafer and is etched, during especially with yittrium oxide, the coupling feelings of lower electrode plate can be effectively improved
Condition, improve etching quality.
With reference to figure 4 to Fig. 8, air jet system 2 mainly includes in the first main body 21 and the second main body 22 of cylindrical shape, and
First main body 21 and the second main body 22 are process respectively using sapphire material.
The interior edge of first main body 21 its be axially arranged with two separate flow orifice a210 and flow orifice b211, the present embodiment
Axis of the middle flow orifice a210 along the first master 21 is set, in hollow cylindrical-shaped structure, and flow orifice b211 and flow orifice
A210 is coaxially disposed, and the radial outside in flow orifice a210, and the first main body 21 can largely be ensured by so setting
Overall force stability, it is more beneficial for the processing in each hole.
The upper end outer wall of first main body 1 is provided with the deep gouge 217 radially to cave inward, and the bottom wall of deep gouge 217 is in
Smooth perpendicular, offers injecting hole a212 and injecting hole b213 on the bottom wall of deep gouge 217, wherein injecting hole a212 with
Flow orifice a210 is connected, and injecting hole b213 connects with flow orifice b211.
Likewise, it is axially arranged with two separate flow orifice c220 and flow orifice in the interior edge of the second main body 22
D221, in the present embodiment, axis of the flow orifice c220 along the second main body 22 is set, and in hollow cylindrical-shaped structure, and is flowed
Hole d221 is coaxially disposed with flow orifice c220, and the radial outside in flow orifice c220.
With reference to figure 4, the diameter of the first main body 21 is more than the diameter of the second main body 22, the lower end of the first main body 21 and the second master
The upper end of body 22 is fixedly connected；In the present embodiment, there is the groove 216 extended straight up in the lower end wall of the first main body 21,
Groove 216 is in hollow cylindrical, and its diameter and the size of the second main body 22 are adapted, and can so be used first by the second main body 22
After being embedded into groove 216, then the two is welded to integral mode, overlapping area between the two can be effectively increased, ensured
The stability of junction, and sealing, tradition is avoided in bottom combination, broken feelings are easily occurring using process
Condition.
After being connected with the second main body 22 of first main body 21, flow orifice c220 connects with flow orifice a210, flow orifice d221
Connected with flow orifice b211, to ensure that the gas of each flow orifice is not interfere with each other, during processing, preferably flow orifice c220 and flow orifice
A210's is direct the same, and flow orifice d221 is as flow orifice b211 ring footpath, that is, after connecting, upper and lower flow orifice just aligns,
Both it can ensure that gas flowed smoothness, and can ensures the air-tightness of each flow orifice, so as to improve the stability of device.
The lower end edge peripheral, oblique of second main body 22 is provided with multiple taps 222, and tap 222 and flow orifice d221 connects
It is logical, in the present embodiment tap 222 set the and on parallax that the side wall and bottom wall of main body 22 are had a common boundary, and circular array
The lower end of the second main body 22 is distributed in, so sees tap 222 in the outward eight shape distribution in bottom, Ke Yiyou from overall
The spray regime of gas is ejected in effect extension at tap 222, and ensures that gas can be ejected uniformly, can fully ensure that
The boundary position that chip is in farther out can also obtain relatively sufficient gas etch effect, and certainly, tap 222 can also be direct
It is arranged on the bottom wall of the second main body 22, simply spray regime can be relatively reduced.
The annular groove 214 to lower recess is machined with the upper end wall of first main body 21, annular groove 214 is in flow orifice a210 upper ends
Open radial outside, by the inner cap of the annular groove 214 such as closure 215, you can play sealing to flow orifice a210 top
Effect, the gas inside flow orifice a210 is set down to spray.It is close without being carried out to flow orifice a210 top
Feng Shi, take closure 215 away, can also be facilitated by annular groove 214 and be connected with other device features of etching.
In the present embodiment, for convenience of gas injection pipette tips and injecting hole a210 mating connection, injecting hole a210 is processed into two
Hold cylinder not of uniform size step-like, i.e. injecting hole a210 connects the internal diameter that one end internal diameter is less than the other end with flow orifice a210.
Referring to figs. 1 to Fig. 8, chip is etched using the semiconductor wafer plasma etching apparatus of the present embodiment, will
Semiconductor wafer is placed in lower electrode plate 6, and injection apparatus 2 is fixed on dielectric sheet 3, because the diameter of the first main body 21
More than the diameter of the second main body 22, two junctions form step, and the second main body 22 is just stretched from the through hole on dielectric sheet 3
Enter, connected with the inside of etched cavity 1, the first main body 21 then upper surface flush with dielectric sheet 3, so can significantly be protected
Demonstrate,prove the stability of air jet system 2；
TCP coils 4 form upper electrode after being connected with RF power supply, so as to form electromagnetic field in etched cavity 1, excite bottom
The coupling of battery lead plate 6 produces ion, then injects reacting gas, note to air jet system 2 by injecting hole a212 and injecting hole b213
During gas can with injecting hole gas injection thereto can also gas injection simultaneously, reacting gas is from flow orifice c220 lower end or evacuation aperture
222 are discharged into inside etched cavity.Reacting gas forms plasma gas under caused ionization, is applied directly to and partly leads
On body chip, etching work procedure is completed.
First main body 21 and the connecting portion of the second main body 22 are in the outside of etched cavity 1, avoid being in internal corrosion and height
In warm environment, be advantageous to keep the permanent fastness of connecting portion, so as to extend service life.
Different gas is uniformly sprayed into etched cavity 1 from tap 222 and flow orifice c220 lower end respectively, because discharge
Hole 222 be in a manner of splayed expands outwardly, in this way it can be ensured that gas ejection is arranged at the bottom and side of injection apparatus,
Then stepless action on semiconductor wafer, improves the yields of product, effectively improves production efficiency again.
Finally it should be noted that foregoing description is only preferred embodiment of the present utility model, the common skill of this area
Art personnel on the premise of without prejudice to the utility model aims and claim, can make under enlightenment of the present utility model
Expression, such conversion are each fallen within the scope of protection of the utility model as multiple types.
Claims (10)
1. a kind of semiconductor wafer plasma etching apparatus, including etched cavity (1) and air jet system (2), it is characterised in that：It is described
Etched cavity (1) is in hollow structure, and its upper end is open, and the dielectric sheet adaptable with it (3), the jet dress are configured with open-mouth
Put (2) to be vertically located on dielectric sheet (3), with connecting inside etched cavity (1), the upper surface of dielectric sheet (3) is provided with TCP for its lower end
Coil (4)；
The support base (5) for being used for supporting semiconductor wafer is provided with the etched cavity (1), is horizontally installed with the support base (5)
Lower electrode plate (6)；
The air jet system (2) includes the first main body (21) and the second main body (22), and the two is process by sapphire material；
First main body (21) interior edge its be axially arranged with flow orifice a (210) and flow orifice b (211), wherein flow orifice a (210)
Upper and lower ends through the first main body (21), the first main body (21) outer wall be provided with respectively with flow orifice a (210) and flow orifice b
(211) the injecting hole a (212) and injecting hole b (213) of connection；
Second main body (22) interior edge its be axially arranged with flow orifice c (220) and flow orifice d (221), wherein flow orifice c (220)
Through the second main body (22) upper and lower ends, the lower end circumference outer rim of the second main body (22) is provided with least one and flow orifice d (221)
The tap (222) being connected；
The upper end of second main body (22) is fixedly connected with the lower end of the first main body (21), and flow orifice c (220) and flow orifice
A (210) is connected, and flow orifice d (221) connects with flow orifice b (211).
2. semiconductor wafer plasma etching apparatus according to claim 1, it is characterised in that：The support base (5) is in
It is discoid, the first lug boss (50) extended straight up is provided with along its axis thereon, its outer rim is provided with to be extended straight up
The second lug boss (51), the downside of the lower electrode plate (6) be provided with respectively with the first lug boss (50) and the second lug boss
(51) adaptable the first depressed part (60) and the second depressed part (61), embedded first depressed part (60) of the first lug boss (50)
In, in embedded second depressed part (61) of the second lug boss (51).
3. semiconductor wafer plasma etching apparatus according to claim 2, it is characterised in that：The lower electrode plate
(6) radial outside is arranged with the edge ring (52) of isolation material.
4. the semiconductor wafer plasma etching apparatus according to Claims 2 or 3, it is characterised in that：The TCP coils
(4) in concentric structure and being coaxially disposed with air jet system (2).
5. semiconductor wafer plasma etching apparatus as claimed in any of claims 1 to 3, it is characterised in that：Institute
State flow orifice a (210) and flow orifice c (220) to set along the axis of the first main body (21) and the second main body (22) respectively, flowing
Hole a (210) identical with flow orifice c (220) internal diameter is in hollow circuit cylinder cavernous structure；
The flow orifice b (211) is coaxially disposed with flow orifice a (210), and the radial outside in flow orifice a (210), flowing
Hole d (221) and flow orifice c (220) is coaxially disposed, and the radial outside in flow orifice c (220), flow orifice b (211) and stream
Dynamic hole d (221) is in the same size, structure annular in shape.
6. semiconductor wafer plasma etching apparatus according to claim 1 or 2, it is characterised in that：The tap
(222) circular array is evenly distributed on the lower end of the second main body (22).
7. semiconductor wafer plasma etching apparatus according to claim 6, it is characterised in that：First main body (21)
Upper end wall be provided with annular groove (214) to lower recess, and the annular groove (214) is in flow orifice a (210) outside, annular groove
(214) the configuration closure (215) adaptable with it in.
8. semiconductor wafer plasma etching apparatus according to claim 7, it is characterised in that：First main body (21)
It is in cylindrical structure with the second main body (22), and the diameter of the first main body (21) is more than the diameter of the second main body (22).
9. semiconductor wafer plasma etching apparatus according to claim 8, it is characterised in that：First main body (21)
Lower end, which has, along it extends axially upward cylindrical groove (216), the diameter of the groove (216) and the second main body (22)
Diameter is adapted, and the upper end of second main body (22) is embedded in the groove (216).
10. semiconductor wafer plasma etching apparatus according to claim 1, it is characterised in that：First main body
(21) outer wall is provided with deep gouge (217) in injecting hole a (212) and injecting hole b (213) position, and deep gouge (217) bottom wall is light
Sliding planar structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720989277.0U CN207082516U (en) | 2017-08-09 | 2017-08-09 | Semiconductor wafer plasma etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720989277.0U CN207082516U (en) | 2017-08-09 | 2017-08-09 | Semiconductor wafer plasma etching apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN207082516U true CN207082516U (en) | 2018-03-09 |
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ID=61419382
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| Application Number | Title | Priority Date | Filing Date |
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| CN201720989277.0U Expired - Fee Related CN207082516U (en) | 2017-08-09 | 2017-08-09 | Semiconductor wafer plasma etching apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885698A (en) * | 2021-01-15 | 2021-06-01 | 莫维伟 | Silicon wafer etching device for semiconductor integrated circuit |
-
2017
- 2017-08-09 CN CN201720989277.0U patent/CN207082516U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885698A (en) * | 2021-01-15 | 2021-06-01 | 莫维伟 | Silicon wafer etching device for semiconductor integrated circuit |
| CN112885698B (en) * | 2021-01-15 | 2022-12-27 | 苏州赛莱德自动化科技有限公司 | Silicon wafer etching device for semiconductor integrated circuit |
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