CN206975100U - A kind of current sensor - Google Patents
A kind of current sensor Download PDFInfo
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- CN206975100U CN206975100U CN201720878378.0U CN201720878378U CN206975100U CN 206975100 U CN206975100 U CN 206975100U CN 201720878378 U CN201720878378 U CN 201720878378U CN 206975100 U CN206975100 U CN 206975100U
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- current sensor
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- ampere wires
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- pcb
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- 239000007769 metal material Substances 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 7
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- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 description 7
- 101710149812 Pyruvate carboxylase 1 Proteins 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model provides a kind of current sensor, including PCB, magnetic transducing chip, ampere wires and screen layer；The PCB is arranged in the screen layer；At least part of ampere wires are arranged in the screen layer, and are fixed in the PCB；The magnetic transducing chip is fixed in the PCB, and magnetic transducing chip is located on the center line of ampere wires.Current sensor high sensitivity provided by the utility model, precision are high, size is small, cost is low and strong antijamming capability.
Description
Technical field
It the utility model is related to sensor technical field, and in particular to a kind of current sensor.
Background technology
Because magnetoresistive element has high sensitivity and high accuracy, the current sensor using magnetoresistive element as sensing element
Application it is more and more extensive.
However, the current sensor using magnetoresistive element as sensing element has two：
First, the measurement for low current is, it is necessary to set extra magnetic core, and because magnetic core has magnetic hysteresis, temperature characterisitic is poor,
And easy saturation, the precision of current sensor can be substantially reduced, also, the price of magnetic core is higher, and volume is larger.
Second, because the sensitivity of magnetoresistive element is very high, to the current sensor using magnetoresistive element as sensing element
Antijamming capability requirement it is very high.
Utility model content
In view of above-mentioned analysis, the utility model be directed to a kind of high sensitivity, precision are high, size is small, cost it is low with
And the current sensor of strong antijamming capability.
To achieve the above object, the utility model adopts the following technical scheme that：
The utility model provides a kind of current sensor, including PCB, magnetic transducing chip, ampere wires and screen
Cover layer；The PCB is arranged in the screen layer；At least part of ampere wires are arranged at the screen layer
It is interior, and be fixed in the PCB；The magnetic transducing chip is fixed in the PCB, and magnetic transducing core
Piece is located on the center line of ampere wires.
As an alternative embodiment, the magnetic-field-sensitive direction of the magnetic transducing chip and ampere wires center line
Direction is parallel or vertical.
As an alternative embodiment, the magnetic transducing chip is located at the PCB respectively with the ampere wires
The both sides of wiring board.
As an alternative embodiment, the number of the magnetic transducing chip is arranged to one.
As an alternative embodiment, the magnetic transducing chip includes magnet-sensitive element, the magnet-sensitive element
For anisotropic magnetoresistance element, giant magnetoresistance element or magnetic tunnel junction element.
As an alternative embodiment, the giant magnetoresistance element or magnetic tunnel junction element are nanometer grade thickness
Multi-layer film structure.
As an alternative embodiment, the screen layer is arranged at least one layer of, it is metal material.
As an alternative embodiment, the ampere wires are U-shaped ampere wires, the two of the U-shaped ampere wires
The end of arm is located at the outside of screen layer.
As an alternative embodiment, the end of the ampere wires two-arm is additionally provided with fixing hole, for passing through
Connector connects the binding post of ampere wires and ampere wires to be measured, and fixed current sensor.
As an alternative embodiment, the current sensor also includes power input and signal output part, institute
It is magnetic transducing chip power supply to state power input, and magnetic transducing chip is by the magnetic in magnetic field caused by the ampere wires detected
Signal is converted into voltage signal, and exports the voltage signal by the signal output part.
Technical scheme provided by the utility model, compared with prior art, at least have the following advantages that：
The utility model provides a kind of current sensor, including PCB, magnetic transducing chip, ampere wires and screen
Cover layer；The PCB is arranged in the screen layer；At least part of ampere wires are arranged at the screen layer
It is interior, and be fixed in the PCB；The magnetic transducing chip is fixed in the PCB, and magnetic transducing core
Piece is located on the center line of ampere wires.Current sensor high sensitivity provided by the utility model, precision are high, size is small, into
This low and strong antijamming capability.
Brief description of the drawings
, below will be right in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
The required accompanying drawing used is briefly described in embodiment or description of the prior art, it should be apparent that, describe below
In accompanying drawing be some embodiments of the present utility model, for those of ordinary skill in the art, do not paying creativeness
On the premise of work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the Facad structure signal of a specific example of the current sensor proposed in the utility model embodiment
Figure；
Fig. 2 is the side structure signal of a specific example of the current sensor proposed in the utility model embodiment
Figure；
Fig. 3 is the Facad structure signal of another specific example of the current sensor proposed in the utility model embodiment
Figure；
Fig. 4 is the side structure signal of another specific example of the current sensor proposed in the utility model embodiment
Figure；
Fig. 5 is the electrical connection schematic diagram that half-bridge structure is recommended in the utility model embodiment；
Fig. 6 is to recommend the curve of output schematic diagram that half-bridge structure changes with outfield in the utility model embodiment；
Fig. 7 is the electrical connection schematic diagram that full bridge structure is recommended in the utility model embodiment；
Fig. 8 is to recommend the curve of output schematic diagram that full bridge structure changes with outfield in the utility model embodiment；
Fig. 9 is that the physical location of gradient half-bridge in the utility model embodiment puts schematic diagram；
Figure 10 is that the physical location of gradient full-bridge in the utility model embodiment puts schematic diagram；
Figure 11 is the electrical connection schematic diagram of gradient half-bridge in the utility model embodiment；
Figure 12 is the electrical connection schematic diagram of gradient full-bridge in the utility model embodiment；
Figure 13 is the Distribution of Magnetic Field that the current sensor proposed in the utility model embodiment measures under outer magnetic interference
Figure.
Embodiment
The technical solution of the utility model is clearly and completely described below in conjunction with accompanying drawing, it is clear that described
Embodiment is the utility model part of the embodiment, rather than whole embodiments.Based on the embodiment in the utility model, sheet
The every other embodiment that field those of ordinary skill is obtained under the premise of creative work is not made, belongs to this practicality
Novel protected scope.
, it is necessary to explanation in description of the present utility model, term " " center ", " on ", " under ", it is "left", "right", " perpendicular
Directly ", the orientation of the instruction such as " level ", " interior ", " outer " or position relationship are based on orientation shown in the drawings or position relationship, are only
Described for the ease of description the utility model and simplifying, rather than instruction or imply signified device or element must have it is specific
Orientation, with specific azimuth configuration and operation, therefore it is not intended that to limitation of the present utility model.In addition, term " the
One ", " second ", " the 3rd " are only used for describing purpose, and it is not intended that instruction or hint relative importance.
, it is necessary to which explanation, unless otherwise clearly defined and limited, term " are pacified in description of the present utility model
Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integratedly
Connection；Can be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary,
The connection of two element internals is can also be, can be wireless connection or wired connection.For the common skill of this area
For art personnel, concrete meaning of the above-mentioned term in the utility model can be understood with concrete condition.
In addition, as long as technical characteristic involved in the utility model different embodiments disclosed below is each other
Conflict can is not formed to be combined with each other.
The utility model embodiment provides a kind of current sensor, and Fig. 1-Fig. 2 is the electricity that the utility model embodiment provides
The front of flow sensor and side structure schematic diagram, as depicted in figs. 1 and 2, the current sensor include PCB 1, magnetic
Sensing chip 2, ampere wires 3 and screen layer 4；PCB 1 is arranged in screen layer 4；At least part of ampere wires 3 are set
It is placed in screen layer 4 and is fixed in PCB 1；Magnetic transducing chip 2 is fixed in PCB, and magnetic transducing core
Piece 2 is located on the center line of ampere wires 3.Current sensor high sensitivity provided by the utility model, precision are high, size is small,
Cost is low and strong antijamming capability.
The number of above-mentioned magnetic transducing chip 2 is arranged to one, is fixed in a welding manner in PCB 1, with electricity
Conductance line 3 is located at the both sides of PCB 1 respectively.The magnetic transducing chip 2 includes magnet-sensitive element, and magnet-sensitive element can be with
It is anisotropic magnetoresistance element, giant magnetoresistance element or magnetic tunnel junction element；Above-mentioned giant magnetoresistance element or magnetic tunnel
Tie the multi-layer film structure that element is nanometer grade thickness so that the size of current sensor is small, high sensitivity, greatly reduces simultaneously
Cost.
In a preferred embodiment, as shown in figure 1, above-mentioned ampere wires 3 are U-shaped ampere wires, the two of the ampere wires 3
The end of arm is located at the outside of screen layer 4, is easy to electric current to be measured to flow through ampere wires 3.Magnetic transducing chip 2 is located at ampere wires
At one section of ampere wires between 3 two-arm, and one section of ampere wires inner and outer between the two-arm of ampere wires 3 it
Between；Using the centerline direction of ampere wires 3 as y-axis direction, using magnetic transducing chip 2 planar the direction vertical with y-axis as x
Direction of principal axis, so that, as z-axis direction, the center line of magnetic transducing chip 2 is located at perpendicular to the direction of the place plane of magnetic transducing chip 2
On the center line of ampere wires 3, the magnetic-field-sensitive direction of the magnetic transducing chip 2 is parallel with the centerline direction of ampere wires 3, i.e.,
Parallel to y-axis, as shown in the arrow of Fig. 1 rights.
The structure of above-mentioned magnetic transducing chip 2 will be passed through to recommend half-bridge or recommending full-bridge, during use constant voltage or
Electric current.
Recommend half-bridge structure to be in series by two physical property identical magneto-resistors, as shown in figure 5, magneto-resistor 21 and magnetic
Resistance 22 is together in series, and using the circuit for recommending half-bridge structure, three ports Vbias, GND and VOUT pass through for three port types
Input/output terminal accesses circuit, and constant voltage or electric current are passed through between Vbias and GND；Half-bridge structure is recommended with external magnetic field to change
Curve of output schematic diagram as shown in fig. 6, the magnetic-field-sensitive of two bridge arms is in opposite direction, by same external magnetic field
When, the resistance increase of bridge arm, the resistance of a bridge arm reduces, the change of external magnetic field cause output voltage (port VOUT with
Voltage between port Vbias (or port GND)) change.
Fig. 7 is the electrical connection schematic diagram for recommending full bridge structure, is connected and composed by four physical property identical magneto-resistors, magnetic
Resistance 23,24 is connected, and magneto-resistor 25,26 is connected, and two resistance of series connection are passed through steady to parallel connection again between port Vbias and GND
Constant voltage or electric current；Curve of output schematic diagram that full bridge structure changes with external magnetic field is recommended as shown in figure 8, recommending the magnetoelectricity of full-bridge
The magnetic-field-sensitive direction of resistance 23,26 is identical, and the magnetic-field-sensitive direction of magneto-resistor 24,25 is identical, the magnetic-field-sensitive of magneto-resistor 23,24
In the opposite direction, in the presence of same external magnetic field, the resistance of magneto-resistor 24,25 reduces while magneto-resistor 23,26 resistances become big
(or magneto-resistor 24, the increase of 25 resistances while the reduction of magneto-resistor 23,26 resistances), so as to produce electricity between output end V+ and V-
Potential difference, i.e. output voltage.
The screen layer 4 for the current sensor that the utility model embodiment provides is metal material, and the number of plies of screen layer 4 is set
For two layers, as depicted in figs. 1 and 2, including internal shield 41 and external shielding layer 42, internal shield 41 are arranged on external shielding layer 42
Interior, wherein internal shield 41 is U-shaped structure, and external shielding layer 42 uses the structure of bottom opening.
In actual applications, when the thickness of internal shield 41 is not more than 1.5mm, the thickness of external shielding layer 42 is not less than 2mm,
And the spacing between internal shield 41 and external shielding layer 42 is remarkably improved the utility model embodiment proposition when being not less than 1mm
Current sensor antijamming capability.
Further, the current sensor that the utility model embodiment provides, in addition to power input and signal output
End, the power input are that magnetic transducing chip 2 is powered, and magnetic transducing chip 2 is by magnetic caused by the ampere wires 3 detected
Magnetic signal in is converted into voltage signal, and exports the voltage signal by signal output part；Alternatively, above-mentioned power input
End and signal output part are connected to magnetic transducing chip 2 by PCB 1, and the mode of connection can be lead or contact pin, but
It is not limited to this.
Further, the current sensor that the utility model embodiment provides, the end of the two-arm of ampere wires 3 therein is also
Fixing hole 5 is provided with, for connecting the binding post of ampere wires 3 and ampere wires to be measured, and fixed electricity by connector
Flow sensor；Alternatively, above-mentioned connector can be screw.
Further, the current sensor that the utility model embodiment provides also includes support, is insulating materials, for solid
Determine PCB 1, ampere wires 3 and screen layer 4.
The current sensor that the utility model embodiment provides, the interference of external magnetic field is dropped to below one thousandth, significantly
The antijamming capability of current sensor is improved, so as to which the measurement accuracy of current sensor greatly improved.Figure 13 gives this
The Distribution of Magnetic Field figure that the current sensor that utility model embodiment proposes measures under outer magnetic interference, wherein the external magnetic field disturbed
Magnetic induction intensity be 5Gs, direction is along the y-axis direction；It is y-axis 0 on the inside of one section of ampere wires between the two-arm of ampere wires 3
Point, transverse axis represent that magnetic transducing chip 2 is located at the diverse location of y-axis, and the longitudinal axis represents to be located at y-axis difference in magnetic transducing chip 2
Measured external magnetic field during position.As can be drawn from Figure 13, magnetic transducing chip 2 is in the diverse location of y-axis, current sensor institute
The external magnetic field measured it is of different sizes, with the increase of y values, the external magnetic field that current sensor senses is less and less；Work as magnetic
When the distance of 0 point of sensing chip 2 and y-axis is more than 9.5mm, the size of the external magnetic field measured by current sensor 0.005Gs with
Under, it was demonstrated that current sensor drops to the interference of external magnetic field below one thousandth.
As the alternative of above-described embodiment, the modes of emplacement of magnetic transducing chip 2 is also possible that such as Fig. 3 and Fig. 4
Shown, magnetic transducing chip 2 is located on the center line of ampere wires 3, and magnetic transducing chip 2 be located at the two-arm of ampere wires 3 it
Between；Using the centerline direction of ampere wires 3 as y-axis direction, x-axis is in the direction vertical with y-axis using the place plane of magnetic transducing chip 2
Direction, using perpendicular to the direction of the place plane of magnetic transducing chip 2 as z-axis direction, the magnetic-field-sensitive direction of magnetic transducing chip 2
It is vertical with the centerline direction of ampere wires 3, i.e., parallel to x-axis, as shown in Fig. 3 upper arrows.
When magnetic transducing chip 2 is disposed as described above, i.e., magnetic transducing chip 2 is located on the center line of ampere wires 3,
And magnetic transducing chip 2, when being located between the two-arm of ampere wires 3, the structure of magnetic transducing chip 2 is complete for gradient half-bridge or gradient
Bridge.
The physical location of gradient half-bridge is put as shown in figure 9, the electric connection mode of the gradient half-bridge recommends half-bridge with foregoing
Electric connection mode it is identical, as shown in figure 11, magnetic-field-sensitive direction (such as Fig. 9 rights arrow parallel with x-axis of magnetic transducing chip 2
Shown in head), external magnetic field along the x-axis direction (external magnetic field be a gradient fields, and the gradient field direction is as shown in the arrow of Fig. 9 lower sections), magnetic
The position of resistance 201,202 is different, and constant voltage is inputted between port Vbias and GND.In the situation of no external magnetic field
Under, no matter magneto-resistor 201,202 is located at any position of uniform field, and its resistance is all identical, no output；When external magnetic field puts on magnetic
During resistance 201,202, because external magnetic field is a gradient fields, then position is not on the gradient fields distribution arrangement (i.e. x-axis direction)
The resistance of same magneto-resistor 201,202 is different, therefore produces output.
The physical location of gradient full-bridge is put as shown in Figure 10, and the electric connection mode of the gradient full-bridge recommends full-bridge with foregoing
Electric connection mode it is identical, as shown in figure 12, magnetic-field-sensitive direction (such as Figure 10 rights arrow parallel with x-axis of magnetic transducing chip 2
Shown in head), external magnetic field along the x-axis direction (external magnetic field be a gradient fields, and the gradient field direction is as shown in the arrow of Figure 10 lower sections), magnetic
The position of resistance 203,206 is identical, and the position of magneto-resistor 204,205 is identical, and steady electricity is inputted between port Vbias and GND
Pressure.In the case of no external magnetic field, the resistance of magneto-resistor 203,204,205,206 is identical, and output end does not have electrical potential difference,
Without output；When external magnetic field is put in magneto-resistor 203,204,205,206, because the magnetic field is gradient fields, along gradient fields
The field strength in direction is of different sizes, then identical along the resistance change of gradient direction position identical magneto-resistor 203,206, magnetoelectricity
The resistance change of resistance 204,205 is identical, and the resistance change of magneto-resistor 203,204 (magneto-resistor 205,206) is different, then gradient
There is output voltage VO UT between the output end V+ and V- of full-bridge.
It is as the alternative of above-described embodiment, the end of the two-arm of ampere wires 3 is defeated as the input of electric current to be measured
Go out end, be directly accessed electric current to be measured.
As the alternative of above-described embodiment, the number of plies of screen layer 4 can also be one or more layers, and Fig. 3-Fig. 4 shows
The front of current sensor and the structural representation of side that screen layer 4 is one layer are gone out.
Obviously, above-described embodiment is only intended to clearly illustrate example, and is not the restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the scope of protection of the utility model.
Claims (10)
1. a kind of current sensor, it is characterised in that including PCB (1), magnetic transducing chip (2), ampere wires (3)
With screen layer (4)；
The PCB (1) is arranged in the screen layer (4)；
At least part of ampere wires (3) are arranged in the screen layer (4), and are fixed on the PCB (1)
On；
The magnetic transducing chip (2) is fixed in the PCB (1), and magnetic transducing chip (2) is located at ampere wires
(3) on center line.
2. current sensor according to claim 1, it is characterised in that the magnetic-field-sensitive of the magnetic transducing chip (2)
Direction and ampere wires (3) centerline direction are parallel or vertical.
3. current sensor according to claim 2, it is characterised in that the magnetic transducing chip (2) and the electric current
Wire (3) is located at the both sides of the PCB (1) respectively.
4. the current sensor according to Claims 2 or 3, it is characterised in that the number of the magnetic transducing chip (2) is set
It is set to one.
5. current sensor according to claim 4, it is characterised in that the magnetic transducing chip (2) includes magnetic susceptibility
Element, the magnet-sensitive element are anisotropic magnetoresistance element, giant magnetoresistance element or magnetic tunnel junction element.
6. current sensor according to claim 5, it is characterised in that giant magnetoresistance element or the MTJ member
Part is the multi-layer film structure of nanometer grade thickness.
7. current sensor according to claim 1, it is characterised in that the screen layer (4) is arranged at least one layer of, is
Metal material.
8. current sensor according to claim 7, it is characterised in that the ampere wires (3) are U-shaped ampere wires,
The end of the two-arm of the U-shaped ampere wires is located at the outside of screen layer (4).
9. current sensor according to claim 8, it is characterised in that the end of ampere wires (3) two-arm is also set
Fixing hole (5) is equipped with, for connecting the binding post of ampere wires (3) and ampere wires to be measured by connector, and it is fixed
Current sensor.
10. current sensor according to claim 1, it is characterised in that also including power input and signal output part,
The power input is powered for magnetic transducing chip (2), and magnetic transducing chip (2) produces the ampere wires detected (3)
Magnetic field in magnetic signal be converted into voltage signal, and pass through the signal output part and export the voltage signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720878378.0U CN206975100U (en) | 2017-07-19 | 2017-07-19 | A kind of current sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720878378.0U CN206975100U (en) | 2017-07-19 | 2017-07-19 | A kind of current sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206975100U true CN206975100U (en) | 2018-02-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720878378.0U Active CN206975100U (en) | 2017-07-19 | 2017-07-19 | A kind of current sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290584A (en) * | 2017-07-19 | 2017-10-24 | 无锡乐尔科技有限公司 | A kind of current sensor |
| CN108761171A (en) * | 2018-06-05 | 2018-11-06 | 南方电网科学研究院有限责任公司 | A kind of measurement method and device of line current |
| CN113465683A (en) * | 2021-07-28 | 2021-10-01 | 郑州信工智能化系统有限公司 | Composite sensor for measuring current and temperature |
-
2017
- 2017-07-19 CN CN201720878378.0U patent/CN206975100U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290584A (en) * | 2017-07-19 | 2017-10-24 | 无锡乐尔科技有限公司 | A kind of current sensor |
| CN108761171A (en) * | 2018-06-05 | 2018-11-06 | 南方电网科学研究院有限责任公司 | A kind of measurement method and device of line current |
| CN108761171B (en) * | 2018-06-05 | 2024-04-19 | 南方电网科学研究院有限责任公司 | Line current measuring method and device |
| CN113465683A (en) * | 2021-07-28 | 2021-10-01 | 郑州信工智能化系统有限公司 | Composite sensor for measuring current and temperature |
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Effective date of registration: 20190904 Address after: 233000 Room 228, 2nd Floor, West Building, City Gate Building, Bengbu City, Anhui Province Patentee after: Bengbu Ximag Technology Co.,Ltd. Address before: 214131 Gaolang East Road, Wuxi City, Jiangsu Province, 999-8-A2-501 Patentee before: WUXI LER TECHNOLOGY Co.,Ltd. |
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Address after: Xici Technology Industrial Park, No. 321 Taibo Road, Sensing Valley C District, Bengbu Economic Development Zone, Anhui Province, 233060 Patentee after: Anhui Xici Technology Co.,Ltd. Address before: Room 228, 2nd Floor, West Building, Chengzhimen Building, Bengbu City, Anhui Province, 233000 Patentee before: Bengbu Ximag Technology Co.,Ltd. |
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