CN206923039U - 背极板及麦克风 - Google Patents
背极板及麦克风 Download PDFInfo
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- CN206923039U CN206923039U CN201720876976.4U CN201720876976U CN206923039U CN 206923039 U CN206923039 U CN 206923039U CN 201720876976 U CN201720876976 U CN 201720876976U CN 206923039 U CN206923039 U CN 206923039U
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- acoustic holes
- pole plate
- back pole
- microphone
- acoustic
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- 239000002184 metal Substances 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 15
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 description 6
- 230000000630 rising effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201720876976.4U CN206923039U (zh) | 2017-07-19 | 2017-07-19 | 背极板及麦克风 |
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CN201720876976.4U CN206923039U (zh) | 2017-07-19 | 2017-07-19 | 背极板及麦克风 |
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CN206923039U true CN206923039U (zh) | 2018-01-23 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109286884A (zh) * | 2017-07-19 | 2019-01-29 | 上海微联传感科技有限公司 | 背极板及麦克风 |
EP3474573A1 (en) * | 2017-10-18 | 2019-04-24 | Omron Corporation | Mems transducer |
-
2017
- 2017-07-19 CN CN201720876976.4U patent/CN206923039U/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109286884A (zh) * | 2017-07-19 | 2019-01-29 | 上海微联传感科技有限公司 | 背极板及麦克风 |
EP3474573A1 (en) * | 2017-10-18 | 2019-04-24 | Omron Corporation | Mems transducer |
US10555089B2 (en) | 2017-10-18 | 2020-02-04 | Omron Corporation | Transducer |
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20190202 Address after: Room 118, Building 20, No. 83 Lane 1-42, Hongxiang North Road, Wanxiang Town, Pudong New Area, Shanghai, 201318 Patentee after: Maigan Microelectronics (Shanghai) Co.,Ltd. Address before: 201203 2, 3 building, 439 Chunchun Road, Pudong New Area, Shanghai. Patentee before: MICROLINK SENSTECH SHANGHAI Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240507 Address after: 214135 China Sensor Network International Innovation Park F2, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province Patentee after: SV SENSTECH (WUXI) CO.,LTD. Country or region after: China Address before: Room 118, Building 20, No. 83 Lane 1-42, Hongxiang North Road, Wanxiang Town, Pudong New Area, Shanghai, 201318 Patentee before: Maigan Microelectronics (Shanghai) Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |