CN206863165U - A kind of IGBT module characteristic aging equipment - Google Patents
A kind of IGBT module characteristic aging equipment Download PDFInfo
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- CN206863165U CN206863165U CN201720543839.9U CN201720543839U CN206863165U CN 206863165 U CN206863165 U CN 206863165U CN 201720543839 U CN201720543839 U CN 201720543839U CN 206863165 U CN206863165 U CN 206863165U
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Abstract
The utility model discloses a kind of IGBT module characteristic aging equipment, belong to IGBT aging equipment technical fields, not the problem of solving the IGBT elements of China's autonomous production does not have a supporting, reliable, low cost aging equipment, and the IGBT product reliability produced is difficult to be guaranteed.Mainly include IGBT reverse leakage currents test circuit and high current degradation circuit.The utility model is significant in IGBT production fields, and its low cost, high reliability are that whole industry creates considerable economic benefit, and realize that easily practicality is very strong, can be widely applied to IGBT production technical fields.
Description
Technical field
The utility model belongs to IGBT aging equipment technical fields, specifically, more particularly to a kind of IGBT module characteristic
Aging equipment.
Background technology
IGBT is insulated gate bipolar transistor, is by BJT (double pole triode) and MOS (insulating gate type field effect tube)
The compound full-control type voltage driven type power semiconductor of composition, has the low conducting of MOSFET high input impedance and GTR concurrently
Advantage of both pressure drop.GTR saturation pressures reduce, and current carrying density is big, but driving current is larger；MOSFET driving power very littles,
Switching speed is fast, but conduction voltage drop is big, and current carrying density is small.IGBT combines the advantages of both the above device, driving power it is small and
Saturation pressure reduces.To save space, typically by two or more IGBT component synthesis together.China all the time
IGBT module depends on import more, and original cost is very high, but has to buy using business, and reason is：China's autonomous production
IGBT elements do not have a supporting, reliable, low cost aging equipment, and the IGBT product reliability produced is difficult to obtain
Ensure.
Utility model content
The purpose of this utility model is in view of the deficienciess of the prior art, reverse leakage current can be carried out by providing one kind
Test, the inexpensive IGBT module characteristic aging equipment of aging high-current test.
The utility model is achieved through the following technical solutions：
A kind of IGBT module characteristic aging equipment, including by main control circuit unit, electrical control distribution line unit, high pressure
Generation circuit unit, triggers circuit unit, IGBT module group to be measured, reverse leakage current detection circuit unit and malfunction coefficient lamp
The IGBT reverse leakage current test circuits that unit is formed；By the main control circuit unit, the electrical control distribution line unit,
The IGBT module group to be measured, the triggers circuit unit, high current generation circuit unit, current transducer, voltage transmitter
And the high current degradation circuit that display circuit unit is formed；
The main control circuit unit is produced through electrical control distribution line unit and the high-pressure generating circuit unit, high current
Raw circuit unit electric signal is connected, and the high-pressure generating circuit unit produces High Level DC Voltage, and the High Level DC Voltage is transmitted
To the IGBT module group to be measured, while the IGBT module group to be measured is turned on by the triggers circuit unit triggers, described to treat
Survey IGBT module group through reverse leakage current detection circuit unit with the main control circuit unit electric signal to be connected, the master control
Whether the IGBT element reverse leakage flow valuves that circuit unit judgement detects are qualified, and are shown by the malfunction coefficient lamp unit
Show；
The high current generation circuit unit is connected with the IGBT module group electric signal to be measured, the IGBT module to be measured
Group is turned on by the triggers circuit unit triggers, and high current burn-in test loop is formed through current-limiting resistance after triggering and conducting；The master
It is additionally provided with current transducer, voltage transmitter on loop, the current transducer, voltage transmitter are by the height on test loop
Pressure, high current are converted into low-voltage dc signal, and the low-voltage dc signal are transmitted to the main control circuit unit, by the master
Control circuit unit and show aging voltage, aging current numerical value through the display circuit unit.
Preferably, the IGBT module characteristic aging equipment is provided with temperature sensor, and the temperature sensor will detect
To temperature signal feed back to the main control circuit unit, the main control circuit unit control cooling fan group execution unit performs
Fan is acted, and the IGBT module group to be measured is cooled by the cooling fan execution unit.
Preferably, the electrical control distribution wire unit includes 220V input powers, start button SW1, stops pressing manually
Button SW2, A.C. contactor K1, A.C. contactor K3 and A.C. contactor K4, the A.C. contactor K1 are main ac contactor
Device；The A.C. contactor K3 is high-pressure generating circuit A.C. contactor, controls it to connect on-off by the main control circuit unit
Open the high-pressure generating circuit unit；The A.C. contactor K4 is high current generation circuit A.C. contactor, by the master control
Circuit unit controls it to be switched on or switched off the high current generation circuit unit.
Preferably, the electrical control distribution line unit is additionally provided with delay circuit.
Preferably, the high-pressure generating circuit unit includes pressure regulator TR1, rectifier bridge D1, after the rectifier bridge D1 rectifications
High pressure transmitted through relay to the IGBT module group to be measured, while turned on by the trigger circuit triggers described to be measured
IGBT module group, the sampled resistive transmission of the IGBT module group reverse leakage current output end to be measured to the governor circuit list
Member；The reverse leakage current detection circuit unit includes relay driving chip, the relay driving chip and the relay
The coil both ends wire connection of device, the relay driving chip are switched on or switched off institute under the control of the main control circuit unit
State relay.
Preferably, the model ULN2003 of the relay driving chip.
Preferably, the main control circuit unit is PIC16F1947 single-chip microcomputers.
Preferably, the high current generation circuit unit includes controllable silicon Q, high-power transformer T5 and rectifier bridge D13,
The input of the high-power transformer T5 is connected with the A.C. contactor K4 wires, and as described in controllable silicon Q regulations
Transformer T5 output current size, the voltage after it is adjusted are transmitted after the rectifier bridge D13 rectifications to the IGBT to be measured
Module group, the IGBT module group to be measured are triggered by the triggers circuit unit, formed after triggering through current-limiting resistance simultaneously
High current aging loop, wire is gone back in its loop and is connected with the voltage transmitter, current transducer, respectively by high voltage, big
Electric current is converted into low dc voltage and transmitted to the main control circuit unit, and carries out quantification filtering by the main control circuit unit
Transmitted after reason to the display circuit unit.
Preferably, the triggers circuit unit includes transformer T, chip drives rectifier bridge, IGBT driving chips, the change
Depressor T inputs are connected with the A.C. contactor K4 wires, its output end after chip drives rectifier bridge rectification with it is described
IGBT driving chips are electrically connected, and the IGBT driving chips are connected with the IGBT module wire to be measured, for triggering described treat
Survey IGBT module group.
Compared with prior art, the beneficial effects of the utility model are：
1. it is the utility model circuit design stable performance, highly reliable, working environment can be simulated, IGBT elements are carried out anti-
To leakage current, high current burn-in test, IGBT component reliabilities are effectively ensured；
2. the utility model circuit design simple and clear, each IGBT elements detection trigger unit is independent, not done mutually
Disturb, the component used in circuit is the common common component in market, and original cost is low, considerably reduces IGBT systems
Make enterprise's input cost；
3. the utility model is significant in IGBT production fields, its low cost, high reliability are created for whole industry
Considerable economic benefit has been made, and has realized that easily practicality is very strong, can be widely applied to IGBT production technical fields.
Brief description of the drawings
Fig. 1 is Tthe utility model system block diagram；
Fig. 2 is the utility model electrical control distribution line unit, high-pressure generating circuit unit and high current generation circuit
Unit schematic diagram；
Fig. 3 is the utility model reverse leakage current detection circuit unit schematic diagram；
Fig. 4 is the utility model main control circuit unit schematic diagram；
Fig. 5 is the utility model current transducer, voltage transmitter schematic diagram；
Fig. 6 is the utility model triggers circuit unit and IGBT module group schematic diagram to be measured；
Fig. 7 is the utility model display circuit unit schematic diagram；
Fig. 8 is the utility model temperature sensor and cooling fan group execution unit schematic diagram.
In figure：1. main control circuit unit；2. electrical control distribution line unit；3. high-pressure generating circuit unit；4. triggering
Circuit unit；5. IGBT module group to be measured；6. reverse leakage current detects circuit unit；7. malfunction coefficient lamp unit；8. high current
Generation circuit unit；9. current transducer；10. voltage transmitter；11. display circuit unit；12. temperature sensor；13. cooling
Fan group execution unit.
Embodiment
The utility model is further illustrated below in conjunction with the accompanying drawings：
A kind of IGBT module characteristic aging equipment, including by main control circuit unit 1, electrical control distribution line unit 2, height
Pressure life circuit unit 3, triggers circuit unit 4, IGBT module group 5 to be measured, reverse leakage current detection circuit unit 6 and failure
The IGBT reverse leakage current test circuits that display lamp unit 7 is formed；By the main control circuit unit 1, the electrical control distribution
Line unit 2, the IGBT module group 5 to be measured, the triggers circuit unit 4, high current generation circuit unit 8, electric current pick-up
The high current degradation circuit that device 9, voltage transmitter 10 and display circuit unit 11 are formed；
The main control circuit unit 1 is through electrical control distribution line unit 2 and the high-pressure generating circuit unit 3, big electricity
The raw electric signal of circuit unit 8 of miscarriage is connected, and the high-pressure generating circuit unit 3 produces High Level DC Voltage, and by the high direct current
Pressure is transmitted to the IGBT module group 5 to be measured, while the IGBT module group 5 to be measured is led by the triggers circuit unit 4 triggering
Logical, the IGBT module group 5 to be measured detects circuit unit 6 and the electric signal of main control circuit unit 1 through the reverse leakage current
It is connected, whether the IGBT element reverse leakage flow valuves that the judgement of main control circuit unit 1 detects are qualified, and pass through the failure
Display lamp unit 7 is shown；
The high current generation circuit unit 8 is connected with the electric signal of IGBT module group 5 to be measured, the IGBT moulds to be measured
Block group 5 forms high current burn-in test loop by the triggering and conducting of triggers circuit unit 4 after triggering and conducting through current-limiting resistance；
Current transducer 9, voltage transmitter 10 are additionally provided with the major loop, the current transducer 9, voltage transmitter 10 will be tested back
High pressure, high current on road are converted into low-voltage dc signal, and the low-voltage dc signal is transmitted to the main control circuit unit
1, show aging voltage, aging current numerical value through the display circuit unit 11 by the main control circuit unit 1.
Preferably, the IGBT module characteristic aging equipment is provided with temperature sensor 12, and the temperature sensor 12 will
The temperature signal detected feeds back to the main control circuit unit 1, and the main control circuit unit 1 controls cooling fan group to perform list
Member 13 performs fan action, and the IGBT module group 5 to be measured is cooled by the cooling fan execution unit 13.
Preferably, the electrical control distribution wire unit 2 includes 220V input powers, start button SW1, stops pressing manually
Button SW2, A.C. contactor K1, A.C. contactor K3 and A.C. contactor K4, the A.C. contactor K1 are main ac contactor
Device；The A.C. contactor K3 is high-pressure generating circuit A.C. contactor, controls it to connect on-off by the main control circuit unit 1
Open the high-pressure generating circuit unit 3；The A.C. contactor K4 is high current generation circuit A.C. contactor, by the master control
Circuit unit 1 controls it to be switched on or switched off the high current generation circuit unit 8.
Preferably, the electrical control distribution line unit 2 is additionally provided with delay circuit.
Preferably, the high-pressure generating circuit unit 3 includes pressure regulator TR1, rectifier bridge D1, after the rectifier bridge D1 rectifications
High pressure transmitted through relay to the IGBT module group 5 to be measured, while treated as described in the triggering and conducting of triggers circuit unit 4
Survey IGBT module 5, the sampled resistive transmission of reverse leakage current output end of IGBT module group 5 to be measured to the governor circuit list
Member 1；Reverse leakage current detection circuit unit 6 includes relay driving chip, the relay driving chip and it is described after
The coil both ends wire connection of electrical equipment, the relay driving chip connect on-off under the control of the main control circuit unit 1
Drive the relay.
Preferably, the model ULN2003 of the relay driving chip.
Preferably, the main control circuit unit 1 is PIC16F1947 single-chip microcomputers.
Preferably, the high current generation circuit unit 8 includes controllable silicon Q, high-power transformer T5 and rectifier bridge
D13, the input of the high-power transformer T5 are connected with the A.C. contactor K4 wires, and are adjusted by the controllable silicon Q
The output current size of the transformer T5, the voltage after it is adjusted are transmitted after the rectifier bridge D13 rectifications to described to be measured
IGBT module group 5, the IGBT module group 5 to be measured are triggered by the triggers circuit unit 4 simultaneously, through current limliting electricity after triggering
Resistance forms high current aging loop, and wire is gone back in its loop and is connected with the voltage transmitter 10, current transducer 9, respectively will
High voltage, high current are converted into low dc voltage and transmitted to the main control circuit unit 1, and are entered by the main control circuit unit 1
Transmitted after the processing of row quantification filtering to the display circuit unit 11.
Preferably, the triggers circuit unit 4 includes transformer T, chip drives rectifier bridge, IGBT driving chips, described
Transformer T inputs are connected with the A.C. contactor K4 wires, its output end after chip drives rectifier bridge rectification with it is described
IGBT driving chips are electrically connected, and the IGBT driving chips are connected with the IGBT module wire to be measured, for triggering described treat
Survey IGBT module group 5.
High pressure needed for the utility model test reverse leakage current is provided by pressure regulator TR1, and test is supplied to after carrying out rectification
DC voltage needed for loop；Carry out high current aging needed for high current provided by a high-power transformer T5, electric current it is big
The small aging current as needed for the control controllable silicon Q of high current generation circuit unit 8 angle of flow generation, high-power transformer T5 are defeated
The voltage gone out obtains dc source after over commutation and can adjusted as aging power supply, aging current between 0-50A.The pressure regulation
Device TR1, high-power transformer T5 working condition are controlled by the circuit of main control circuit unit 1, in the control of main control circuit unit 1
Under, it is sequentially completed test and the high current degradation of reverse leakage current.
By taking 5 IGBT modules to be measured as an example, the utility model reverse leakage current test circuit is mainly by main control circuit unit
1st, electrical control distribution line unit 2, high-pressure generating circuit unit 3, triggers circuit unit 4, IGBT module group 5 to be measured, reversely
Leakage current detection circuit unit 6 and malfunction coefficient lamp unit 7.
Understand that electrical control distribution line unit 2 mainly has through Figure of description Fig. 1, Fig. 2, Fig. 3, Fig. 4 and Fig. 6
220V input powers, manual stop button SW2, start button SW1, fuse F1, fuse F2, A.C. contactor K1, exchange
Contactor K3 and A.C. contactor K4 etc. are formed, and current unit 3 occurs for the high pressure mainly by pressure regulator TR1, rectifier bridge D1
Formed Deng component, the component composition such as the high current generation circuit unit controllable silicon Q, high-power transformer T5；The master
Control the CPU models PIC16F1947 of circuit unit 1；The reverse leakage current detection circuit unit 6 mainly includes relay K5-
K14, relay driving chip U14, relay driving chip U20；Wherein relay driving chip U14, U20 model
ULN2003；The IGBT module group 5 to be measured contains five IGBT modules, and each IGBT module contains two IGBT elements, that is to say, that
Share 10 IGBT elements；The each IGBT elements of the utility model are controlled by separate relay.Reverse leakage current test circuit work
It is as process：A.C. contactor K3 turning circuits are controlled to obtain by main control circuit unit 1 first electric, the friendship as caused by pressure regulator TR1
DC voltage of the voltage after over commutation is flowed, 1600V is reached as high as, meets the test request of general IGBT module.Circuit start
Afterwards, relay adhesive corresponding to last IGBT element in IGBT module group 5 to be measured is controlled as main control circuit unit 1, most
The latter IGBT elements access reverse leakage current detection circuit unit 6, and simultaneously transmit sampling voltage to main control circuit unit,
The reverse leakage current of the IGBT elements is obtained, and compared with standard value, such as meets standard, the correspondence of malfunction coefficient lamp unit 7
Indicator lamp display green, otherwise show red.After the completion of first IGBT element test, its corresponding relay disconnects, together
When IGBT triggers circuits corresponding to the element worked under the control of governor circuit, make the IGBT turn on, so as to second IGBT
Loop is formed during element test, meanwhile, relay adhesive corresponding to second IGBT element, complete to second IGBT element
Reverse leakage current test.According to this order, all 10 IGBT elements are tested successively.It is described in the utility model reverse
Leakage current test, each IGBT elements have corresponding relay and corresponding trigger element, and trigger element is high-end triggering,
The power supply of the trigger element of each IGBT module be it is independent, it is non-interfering.
The utility model high current degradation circuit mainly includes the main control circuit unit 1, the electrical control is matched somebody with somebody
Electric line unit 2, the IGBT module group 5 to be measured, high current generation circuit unit 8, the triggers circuit unit 4, electric current become
Send device 9, voltage transmitter 10 and display circuit unit 11.With reference to Figure of description Fig. 1, Fig. 2, Fig. 4, Fig. 5, Fig. 6 and Fig. 7
Understand, in the case where reverse leakage current detection is completed, by the switching circuit working condition of main control circuit unit 1, disconnect high pressure
The raw power supply circuit of circuit unit 3, high current generation circuit unit 8 is connected through A.C. contactor K4, be also turned on the triggering electricity
Transformer in road unit 4, the size of transformer output current is adjusted by controllable silicon Q trigger elements, and the voltage after regulation is passed through
Transmitted after rectifier bridge rectification to IGBT module group to be measured.The IGBT elements of all IGBT modules are sequentially connected in series, and by independent
High-side driver unit is triggered simultaneously, and all IGBT elements through current-limiting resistance form aging loop after all triggering.Its major loop
On be connected to voltage transmitter 10 and current transducer 9, the high voltage and 50A high currents that will be up to 1200V respectively are transformed into 0-5V
DC voltage transmit to main control circuit unit 1, and give display circuit after carrying out quantification filtering processing by main control circuit unit 1
Unit 11.
To ensure safety, the utility model is designed with cooling measure, and it includes temperature sensor, cooling fan group performs list
Member 13, its circuit theory diagrams mainly include temperature sensor RT1, electric capacity C11-C21, resistance as shown in Figure of description Fig. 8
R15-R24, transformer T4, inductance L1-L2, rectifier bridge D12, LM317 voltage stabilizing chip U15, AMS1117 voltage stabilizing chip U18, three poles
The components such as pipe Q2-Q3, opto-coupler chip U17, opto-coupler chip U19, bidirectional triode thyristor BT1-BT2, blower fan M1-M2.It is described to be measured
IGBT module group 5 is installed on a heat sink, and the temperature sensor RT1 is arranged on the radiator, the temperature sensor
Aging temperature is detected, once exceeding setting value, cooling blower group will be started by foregoing circuit by governor circuit.
The utility model can be by start button SW1 starters, and manually stop button SW2 cuts off the electricity supply,
Working time can be set by delay timing relay K2, power supply is automatically cut off to the setting working time.
It is the utility model circuit design stable performance, highly reliable, working environment can be simulated, IGBT elements are carried out reverse
Leakage current, high current burn-in test, IGBT component reliabilities are effectively ensured；The utility model circuit design simple and clear,
Each IGBT element detection trigger units are independent, non-interfering, and the component used in circuit is that market is common
Common component, original cost is low, considerably reduces IGBT manufacturing enterprises input cost；The utility model is produced in IGBT and led
Domain is significant, and its low cost, high reliability are that whole industry creates considerable economic benefit, and are realized easily, real
It is very strong with property, it can be widely applied to IGBT production technical fields.
In summary, preferred embodiment only of the present utility model, not it is used for limiting the utility model implementation
Scope, the equivalent change carried out by all shapes according to described in the utility model claims scope, construction, feature and spirit is with repairing
Decorations, all should be included in right of the present utility model.
Claims (9)
- A kind of 1. IGBT module characteristic aging equipment, it is characterised in that：Including by main control circuit unit (1), electrical control distribution Line unit (2), high-pressure generating circuit unit (3), triggers circuit unit (4), IGBT module group to be measured (5), reverse leakage current Detect the IGBT reverse leakage current test circuits that circuit unit (6) and malfunction coefficient lamp unit (7) are formed；By master control electricity Road unit (1), the electrical control distribution line unit (2), the IGBT module group (5) to be measured, the triggers circuit unit (4), high current generation circuit unit (8), current transducer (9), voltage transmitter (10) and display circuit unit (11) structure Into high current degradation circuit；The main control circuit unit (1) is through electrical control distribution line unit (2) and the high-pressure generating circuit unit (3), big Current generating circuit unit (8) electric signal is connected, and the high-pressure generating circuit unit (3) produces High Level DC Voltage, and by the height DC voltage is transmitted to the IGBT module group (5) to be measured, while the IGBT module group (5) to be measured is by the triggers circuit list First (4) triggering and conducting, the IGBT module group (5) to be measured detect circuit unit (6) and the master control through the reverse leakage current Circuit unit (1) electric signal is connected, and whether the IGBT element reverse leakages flow valuve that main control circuit unit (1) judgement detects It is qualified, and shown by the malfunction coefficient lamp unit (7)；The high current generation circuit unit (8) is connected with IGBT module group (5) electric signal to be measured, the IGBT moulds to be measured Block group (5) forms high current burn-in test through current-limiting resistance by triggers circuit unit (4) triggering and conducting, after triggering and conducting and returned Road；Current transducer (9), voltage transmitter (10), the current transducer (9), voltage transmitter are additionally provided with the major loop (10) high pressure on test loop, high current are converted into low-voltage dc signal, and the low-voltage dc signal is transmitted to described Main control circuit unit (1), aging voltage, aging are shown through the display circuit unit (11) by the main control circuit unit (1) Current values.
- A kind of 2. IGBT module characteristic aging equipment according to claim 1, it is characterised in that：The IGBT module characteristic Aging equipment is provided with temperature sensor (12), and the temperature signal detected is fed back to the master by the temperature sensor (12) Circuit unit (1) is controlled, main control circuit unit (1) the control cooling fan group execution unit (13) performs fan action, by institute Cooling fan execution unit (13) is stated to cool to the IGBT module group (5) to be measured.
- A kind of 3. IGBT module characteristic aging equipment according to claim 1, it is characterised in that：The electrical control distribution Line unit (2) includes 220V input powers, start button SW1, manual stop button SW2, A.C. contactor K1, ac contactor Device K3 and A.C. contactor K4, the A.C. contactor K1 are main A.C. contactor；The A.C. contactor K3 is high pressure Raw circuit AC contactor, controls it to be switched on or switched off the high-pressure generating circuit unit by the main control circuit unit (1) (3)；The A.C. contactor K4 is high current generation circuit A.C. contactor, controls it to connect by the main control circuit unit (1) On-off opens the high current generation circuit unit (8).
- A kind of 4. IGBT module characteristic aging equipment according to claim 1 or 3, it is characterised in that：The electrical control Distribution line unit (2) is additionally provided with delay circuit.
- A kind of 5. IGBT module characteristic aging equipment according to claim 1, it is characterised in that：The high-pressure generating circuit Unit (3) includes pressure regulator TR1, rectifier bridge D1, and the high pressure after the rectifier bridge D1 rectifications is transmitted to described to be measured through relay IGBT module group (5), while the IGBT module group (5) to be measured as described in the triggers circuit (4) triggering and conducting, the IGBT to be measured The sampled resistive transmission of module group (5) reverse leakage current output end is to the main control circuit unit (1)；The reverse leakage current inspection Slowdown monitoring circuit unit (6) includes relay driving chip, the coil both ends wire of the relay driving chip and the relay Connection, the relay driving chip are switched on or switched off the relay under the control of the main control circuit unit (1).
- A kind of 6. IGBT module characteristic aging equipment according to claim 5, it is characterised in that：The relay driving core The model ULN2003 of piece.
- A kind of 7. IGBT module characteristic aging equipment according to claim 1, it is characterised in that：The main control circuit unit (1) it is PIC16F1947 single-chip microcomputers.
- A kind of 8. IGBT module characteristic aging equipment according to claim 1, it is characterised in that：The high current produces electricity Road unit (8) includes controllable silicon Q, high-power transformer T5 and rectifier bridge D13, the input of the high-power transformer T5 with The A.C. contactor K4 wires connection, and by controllable silicon Q regulations transformer T5 output current size, it is adjusted Voltage afterwards is transmitted after the rectifier bridge D13 rectifications to the IGBT module group (5) to be measured, the IGBT module group to be measured (5) while by the triggers circuit unit (4) triggered, high current aging loop, its time are formed through current-limiting resistance after triggering Wire is gone back in road and is connected with the voltage transmitter (10), current transducer (9), is respectively converted into high voltage, high current low DC voltage is transmitted to the main control circuit unit (1), and is passed after carrying out quantification filtering processing by the main control circuit unit (1) Transport to the display circuit unit (11).
- A kind of 9. IGBT module characteristic aging equipment according to claim 5 or 8, it is characterised in that：The triggers circuit Unit (4) includes transformer T, chip drives rectifier bridge, IGBT driving chips, and the transformer T inputs connect with described exchange Tentaculum K4 wires connect, and its output end electrically connects after chip drives rectifier bridge rectification with the IGBT driving chips, described IGBT driving chips are connected with the IGBT module wire to be measured, for triggering the IGBT module group (5) to be measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720543839.9U CN206863165U (en) | 2017-05-15 | 2017-05-15 | A kind of IGBT module characteristic aging equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720543839.9U CN206863165U (en) | 2017-05-15 | 2017-05-15 | A kind of IGBT module characteristic aging equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206863165U true CN206863165U (en) | 2018-01-09 |
Family
ID=60822624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720543839.9U Expired - Fee Related CN206863165U (en) | 2017-05-15 | 2017-05-15 | A kind of IGBT module characteristic aging equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206863165U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107024649A (en) * | 2017-05-15 | 2017-08-08 | 扬州乔恒电子有限公司 | A kind of IGBT module characteristic aging equipment |
| CN111521891A (en) * | 2020-03-02 | 2020-08-11 | 杭州高坤电子科技有限公司 | Module power cycle test system |
-
2017
- 2017-05-15 CN CN201720543839.9U patent/CN206863165U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107024649A (en) * | 2017-05-15 | 2017-08-08 | 扬州乔恒电子有限公司 | A kind of IGBT module characteristic aging equipment |
| CN111521891A (en) * | 2020-03-02 | 2020-08-11 | 杭州高坤电子科技有限公司 | Module power cycle test system |
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