CN206790467U - A kind of single-chip microcomputer isolated high voltage ON-OFF control circuit - Google Patents
A kind of single-chip microcomputer isolated high voltage ON-OFF control circuit Download PDFInfo
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- CN206790467U CN206790467U CN201720075041.6U CN201720075041U CN206790467U CN 206790467 U CN206790467 U CN 206790467U CN 201720075041 U CN201720075041 U CN 201720075041U CN 206790467 U CN206790467 U CN 206790467U
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Abstract
The utility model discloses a kind of single-chip microcomputer isolated high voltage ON-OFF control circuit,Including MCU microcontrollers,One pin is electrically connected with switch S2 control terminal,A contact for switching S2 is electrically connected with transformer T2,Switch S2 another contact is connected to ground,One pin of MCU microcontrollers is electrically connected with switch S1 control terminal,A contact for switching S1 is electrically connected with transformer T1,Switch S1 another contact is connected to ground,Transformer T2 is electrically connected with diode D2 positive poles,Diode D2 negative poles are electrically connected with resistance R3,Resistance R3 is electrically connected with electric capacity C2 and FET Q2 G levels,Transformer T1 is electrically connected with diode D1 positive poles,Diode D1 negative poles are electrically connected with resistance R1,Resistance R1 is electrically connected with electric capacity C1 and FET Q1 G levels,Lift transformer and switch pressure-resistant,Solves the problems, such as the switch control of kilovolt insulating monitor.
Description
Technical field
It the utility model is related to switch technical field of negative pressure, and in particular to a kind of single-chip microcomputer is switched with isolated high voltage and controlled
Circuit.
Background technology
Insulating monitor：A kind of device dedicated for measurement insulation；PhotoMOS (light MOS)：It is using light as medium
Carry out the device of transmitting telecommunication number, generally photophore (infrared light-emitting diode LED) and light-receiving device (photosensitive metal-oxide-semiconductor) are encapsulated
In same shell.Technology traditional at present is using light MOS switch negative pressure, if negative pressure reaches more than 800V, is had and only loose
The AQV258 of next family can be switched, and this switch is by many restrictions such as external imports, and cost is higher.
Traditional technology is to use light MOS switch negative pressure at present, if negative pressure reaches more than 800V, is had and only Panasonic one
AQV258 can switch, and this switch is limited by external import etc., and cost is higher, significantly limit making for client
With, and ceiling voltage is only capable of accomplishing 1500V.
Another scheme is to use relay, and high-voltage relay cost is more than one times of light MOS switch, and extremely difficult
Buying, domestic common relay can only accomplish that 500V is pressure-resistant at present, and volume is big, be unfavorable for insulating monitor miniaturization.
Utility model content
The purpose of this utility model is to provide a kind of single-chip microcomputer isolated high voltage ON-OFF control circuit, above-mentioned to solve
The problem of being proposed in background technology.
To achieve the above object, the utility model provides following technical scheme：A kind of single-chip microcomputer is switched with isolated high voltage
Control circuit, including MCU microcontrollers, described one pin of MCU microcontrollers are electrically connected with switch S2 control terminal, opened
A contact for closing S2 is electrically connected with transformer T2, and another contact for switching S2 is connected to ground, the MCU microcontrollers one
Individual pin is electrically connected with switch S1 control terminal, and a contact for switching S1 is electrically connected with transformer T1, switchs S1 another
Contact is connected to ground, and the transformer T2 is electrically connected with diode D2 positive poles, and diode D2 negative poles are electrically connected with resistance R3, described
Resistance R3 is electrically connected with electric capacity C2 and FET Q2 G levels, and the electric capacity C2 is connected with FET Q2 S levels, the field
The S levels that effect pipe Q2 D levels are electrically connected with resistance R4, the FET Q2 are electrically connected with power cathode, the transformer T1
Diode D1 positive poles are electrically connected with, diode D1 negative poles are electrically connected with resistance R1, the resistance R1 and are electrically connected with electric capacity C1 and field
Effect pipe Q1 G levels, the electric capacity C1 are connected with FET Q1 S levels, and the D levels of the FET Q1 are electrically connected with resistance
R2, the FET Q1 S levels are electrically connected with power cathode.
Preferably, the switch S2 and switch S1 is single-pole double-throw switch (SPDT).
Preferably, the FET Q2 and FET Q1 are N-type.
Preferably, the transformer T2 and transformer T1 for same model.
Preferably, the diode D1 and diode D2 are general-purpose diode.
Preferably, the switch S1 and switch S2 is high frequency electronic switch.
Technique effect of the present utility model and advantage：
1. circuit topological structure is simple, it is easy to make；
2. by lifting the stress levels of transformer and switch, more than 1000V signal control can be reached, solved thousands of
The problem of lying prostrate insulating monitor switch control.
3. not influenceed by generating positive and negative voltage, second figure is seen, can be used for controlling anode.
4. it can effectively ensure that the miniaturization of insulation tester；
The utility model has the characteristics of simple in construction, convenient and practical, is adapted to further genralrlization.
Brief description of the drawings
Fig. 1 is circuit diagram of the present utility model.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belong to the scope of the utility model protection.
Referring to Fig. 1, a kind of single-chip microcomputer isolated high voltage ON-OFF control circuit, including MCU microcontrollers, it is described
One pin of MCU microcontrollers is electrically connected with switch S2 control terminal, and a contact for switching S2 is electrically connected with transformer T2,
Switch S2 another contact is connected to ground, and described one pin of MCU microcontrollers is electrically connected with switch S1 control terminal, opens
A contact for closing S1 is electrically connected with transformer T1, and another contact for switching S1 is connected to ground, and the transformer T2 electrically connects
Diode D2 positive poles are connect, diode D2 negative poles are electrically connected with resistance R3, the resistance R3 and are electrically connected with electric capacity C2 and FET
Q2 G levels, the electric capacity C2 are connected with FET Q2 S levels, and the D levels of the FET Q2 are electrically connected with resistance R4, institute
The S levels for stating FET Q2 are electrically connected with power cathode, and the transformer T1 is electrically connected with diode D1 positive poles, and diode D1 is born
Pole is electrically connected with resistance R1, the resistance R1 and is electrically connected with electric capacity C1 and FET Q1 G levels, and the electric capacity C1 is imitated with field
Should pipe Q1 the connection of S levels, the s levels that the d levels of the FET Q1 are electrically connected with resistance R2, the FET Q1 are electrically connected with
Power cathode.The switch S2 and switch S1 is single-pole double-throw switch (SPDT).The FET Q2 and FET Q1 are N
Type.The transformer T2 and transformer T1 for same model.The diode D1 and diode D2 are general-purpose diode.Institute
It is high frequency electronic switch to state switch S1 and switch S2.
Finally it should be noted that：Preferred embodiment is the foregoing is only, is not limited to the utility model, although
The utility model is described in detail with reference to the foregoing embodiments, for those skilled in the art, still can be with
Technical scheme described in foregoing embodiments is modified, or equivalent substitution is carried out to which part technical characteristic,
Within the spirit and principles of the utility model, any modification, equivalent substitution and improvements made etc., the utility model is all contained in
Protection domain within.
Claims (6)
1. a kind of single-chip microcomputer isolated high voltage ON-OFF control circuit, including MCU microcontrollers, it is characterised in that the MCU
One pin of microcontroller is electrically connected with switch S2 control terminal, and a contact for switching S2 is electrically connected with transformer T2, opens
Another contact for closing S2 is connected to ground, and described one pin of MCU microcontrollers is electrically connected with switch S1 control terminal, switch
A S1 contact is electrically connected with transformer T1, and another contact for switching S1 is connected to ground, and the transformer T2 is electrically connected with
Diode D2 positive poles, diode D2 negative poles are electrically connected with resistance R3, the resistance R3 and are electrically connected with electric capacity C2 and FET Q2
G levels, the electric capacity C2 is connected with FET Q2 S levels, and the D levels of the FET Q2 are electrically connected with resistance R4, described
FET Q2 S levels are electrically connected with power cathode, and the transformer T1 is electrically connected with diode D1 positive poles, diode D1 negative poles
It is electrically connected with resistance R1, the resistance R1 and is electrically connected with electric capacity C1 and FET Q1 G levels, the electric capacity C1 and FET
Q1 S levels connection, the D levels of the FET Q1 are electrically connected with resistance R2, the FET Q1 S levels electric connection power supply
Negative pole.
A kind of 2. single-chip microcomputer isolated high voltage ON-OFF control circuit according to claim 1, it is characterised in that：It is described to open
It is single-pole double-throw switch (SPDT) to close S2 and switch S1.
A kind of 3. single-chip microcomputer isolated high voltage ON-OFF control circuit according to claim 1, it is characterised in that：The field
Effect pipe Q2 and FET Q1 is N-type.
A kind of 4. single-chip microcomputer isolated high voltage ON-OFF control circuit according to claim 1, it is characterised in that：The change
Depressor T2 and transformer T1 for same model.
A kind of 5. single-chip microcomputer isolated high voltage ON-OFF control circuit according to claim 1, it is characterised in that：Described two
Pole pipe D1 and diode D2 is general-purpose diode.
A kind of 6. single-chip microcomputer isolated high voltage ON-OFF control circuit according to claim 1, it is characterised in that：It is described to open
It is high frequency electronic switch to close S1 and switch S2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720075041.6U CN206790467U (en) | 2017-01-19 | 2017-01-19 | A kind of single-chip microcomputer isolated high voltage ON-OFF control circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720075041.6U CN206790467U (en) | 2017-01-19 | 2017-01-19 | A kind of single-chip microcomputer isolated high voltage ON-OFF control circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206790467U true CN206790467U (en) | 2017-12-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720075041.6U Active CN206790467U (en) | 2017-01-19 | 2017-01-19 | A kind of single-chip microcomputer isolated high voltage ON-OFF control circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106685388A (en) * | 2017-01-19 | 2017-05-17 | 沃尔特电子（苏州）有限公司 | Isolation high-voltage switching control circuit for single-chip microcomputer |
| CN117007416A (en) * | 2023-09-21 | 2023-11-07 | 常州市建筑材料研究所有限公司 | Safe cement pressure testing machine |
-
2017
- 2017-01-19 CN CN201720075041.6U patent/CN206790467U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106685388A (en) * | 2017-01-19 | 2017-05-17 | 沃尔特电子（苏州）有限公司 | Isolation high-voltage switching control circuit for single-chip microcomputer |
| CN117007416A (en) * | 2023-09-21 | 2023-11-07 | 常州市建筑材料研究所有限公司 | Safe cement pressure testing machine |
| CN117007416B (en) * | 2023-09-21 | 2023-12-08 | 常州市建筑材料研究所有限公司 | Safe cement pressure testing machine |
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