CN206774873U - A kind of laser of narrow vertical direction far-field divergence angle - Google Patents
A kind of laser of narrow vertical direction far-field divergence angle Download PDFInfo
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- CN206774873U CN206774873U CN201621488960.8U CN201621488960U CN206774873U CN 206774873 U CN206774873 U CN 206774873U CN 201621488960 U CN201621488960 U CN 201621488960U CN 206774873 U CN206774873 U CN 206774873U
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Abstract
The utility model provides a kind of laser of narrow vertical direction far-field divergence angle, the epitaxial structure of the laser includes InP substrate, it is sequentially depositing cushion, limiting layer outside N-type, limiting layer in N-type, the ducting layer of undoped gradually changed refractive index, Quantum well active district, the ducting layer of undoped gradually changed refractive index, limiting layer in p-type, limiting layer, corrosion barrier layer, p-type covering, p-type potential barrier graded bedding, p-type potential barrier violent change layer, p-shaped ohmic contact layer outside p-type from bottom to top in InP substrate, Quantum well active district SQW logarithm is not less than 6 pairs；SQW is the quantum well structure of strain, and trap is compressive strain, is built for tensile strain；The thickness that quantum well structure is built is not less than 10nm；Limiting layer is tensile strain structure sheaf in N-type, and limiting layer uses AlInAs materials in N-type.The laser can reduce the far-field divergence angle of the vertical direction of semiconductor laser, improve the coupling efficiency of laser and optical fiber.
Description
Technical field
Semiconductor laser technique field is the utility model is related to, more particularly to a kind of narrow vertical direction far-field divergence angle swashs
Light device.
Background technology
Semiconductor laser have the characteristics that small volume, in light weight, threshold value is low, long lifespan, can be compatible with silicon integrated circuit,
It is the principal light source of the integrated optoelectronic circuits such as optic communication, optical interconnection, optical oomputing.In such applications, semiconductor laser is sent
Light generally require using optical fiber as transmission medium, it is desirable to there is higher coupling efficiency, but biography between laser and optical fiber
The semiconductor laser of system is often only had hundreds of nanometers using volume minor structure as active layer, the width of optical cavity, vertical far-field
The light angle of departure is about 32-45 °, much larger than parallel to knot direction horizontal divergence angle（About 20 °）, optical diffraction, which acts on, causes Vertical Square
It is larger to far-field divergence angle, and in the direction parallel to knot, because the restriction effect to light field is smaller（With most common ridge waveguide
Exemplified by semiconductor laser, the light field size of its horizontal direction is generally 2um）, therefore, horizontal direction far-field divergence angle is smaller,
It can so cause the far-field spot of semiconductor laser oval.And the diameter of optical fiber is circular, when the light of laser leads to
When crossing optical fiber transmission, the coupling efficiency that may result in laser and optical fiber declines.
Chinese utility model patent（Publication number：CN104466675A）A kind of narrow angle of divergence ridge waveguide semiconductor is disclosed to swash
Light device, semiconductor laser insertion N type InGaAsP materials have higher refractive index as extension ducting layer, this layer, its mesh
Be make light field can be extended from main waveguide a part into the region, play a part of extend near field hot spot, so as to reduce
The far-field divergence angle of laser.Chinese utility model patent（Publication number：CN104300365A）Disclose one kind while reduce hair
The preparation method of the laser of angle and threshold current is dissipated, the program introduces the low of asymmetric doping between ducting layer and limiting layer
Index layer.The introducing of low-index layer is that anti-waveguide effect is introduced near Quantum well active district, this and active area and waveguide
The distribution of layer collective effect regulation light field in the laser, and then change the Optical confinement factor of active area, finally influence laser
The threshold current and vertical divergence angle of device.Above two scheme is that the waveguide of high index of refraction is inserted in the ducting layer of low-refraction
Layer or the low-index layer that asymmetric doping is changed between ducting layer and limiting layer.But the introducing of epitaxially deposited layer is not only
The potential barrier of carrier injection can be increased, parasitic capacitance can be also introduced, influence threshold value, power and the spectral response of semiconductor laser
Curve etc., therefore improvement effect is unsatisfactory.
Utility model content
In view of the above the shortcomings that prior art, the purpose of this utility model is that providing a kind of vertical far-field that reduces sends out
Dissipate angle laser.
In order to achieve the above objects and other related objects, the utility model provides a kind of narrow vertical direction far-field divergence angle
Laser, it is characterised in that the epitaxial structure of the laser includes InP substrate, is sunk successively from bottom to top in the InP substrate
Product has limiting layer outside cushion, N-type, limiting layer, ducting layer, the SQW of the first undoped gradually changed refractive index are active in N-type
Area, the ducting layer of the second undoped gradually changed refractive index, the outer limiting layer of limiting layer, p-type in p-type, corrosion barrier layer, p-type covering,
P-type potential barrier graded bedding, p-type potential barrier violent change layer, p-shaped ohmic contact layer, described Quantum well active district SQW are strained quantum
Well structure；Limiting layer is tensile strain structure sheaf in described N-type, and limiting layer uses AlInAs materials in the N-type.
Preferably, the well layer of described strained quantum well structure is compressive strain, the barrier layer of described strained quantum well structure
For tensile strain.
Preferably, the compressive strain of the quantum well structure well layer is 0.8%-1.2%, and the thickness of well layer is 5-8nm.
Preferably, the tensile strain of the quantum well structure barrier layer is 0.4%-0.8%, and the thickness of barrier layer is 10-15nm.
Preferably, the SQW logarithm of the strained quantum well structure is 6-9 pairs.
Preferably, the thickness of limiting layer is 30-60nm in the N-type.
Preferably, the thickness of the outer limiting layer of the N-type is 2-4 um.The outer limiting layer of the N-type（3）Using gradient doping,
Doping concentration is from 3E18cm-3It is reduced to 1E18 cm-3。
Preferably, the AlInAs materials that limiting layer uses in the N-type is AlxIn(1-x)As materials, its Al component X model
Enclose for 0.44-0.478.It is characterized in that：Limiting layer and the lattice of InP substrate mismatch in the N-type, relative to InP substrate
There is 0.1-0.5% tensile strain.
As described above, laser of this narrow vertical direction far-field divergence angle and preparation method thereof has below beneficial to effect
Fruit：The laser adds MQW（Quantum well structure）The thickness of active area, optical cavity volume can be effectively increased, reduce vertical distance light
The angle of divergence；Limiting layer is tensile strain structure sheaf in the N-type of the laser, using AlInAs materials, with AlxIn(1-x)As materials
Al components reduce, its refractive index accordingly increases, and decay of the light in limiting layer is diminished, so that more luminous energy are extended to
In outer limiting layer InP, so as to reduce the far-field divergence angle of vertical direction, this laser does not increase extension ducting layer, by answering
Become and expand the light field of vertical direction, reduce the far-field divergence angle of the vertical direction of semiconductor laser, improve laser with
The coupling efficiency of optical fiber.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model embodiment.
Fig. 2 is the curve map of the utility model embodiment laser remote field angle of divergence.
Component label instructions
1st, InP substrate；2nd, cushion；3rd, the outer limiting layer of N-type；4th, limiting layer in N-type；5th, the first undoped refractive index is gradually
The ducting layer of change；6th, Quantum well active district；7th, the ducting layer of the second undoped gradually changed refractive index；8th, limiting layer in p-type；9、P
The outer limiting layer of type；10th, corrosion barrier layer；11st, p-type covering；12nd, p-type potential barrier graded bedding；13rd, p-type potential barrier violent change layer；14th, p-shaped
Ohmic contact layer.
Embodiment
Embodiment of the present utility model is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages and effect of the present utility model easily.
Refer to Fig. 1,2.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., only to
The content disclosed in specification is closed, so that those skilled in the art understands and reads, being not limited to the utility model can
The qualifications of implementation, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influenceing the effect of the utility model can be generated and the purpose that can reach, all should still fall in the utility model institute
The technology contents of announcement are obtained in the range of covering.Meanwhile in this specification it is cited as " on ", " under ", "left", "right",
The term of " centre " and " one " etc., understanding for narration is merely convenient to, and is not used to limit the enforceable scope of the utility model,
Its relativeness is altered or modified, in the case where changing technology contents without essence, when being also considered as the enforceable category of the utility model.
As shown in figure 1, the utility model provides a kind of laser of narrow vertical direction far-field divergence angle, the laser it is outer
Prolonging structure includes InP substrate 1, is sequentially depositing growth from bottom to top in InP substrate 1 and has cushion 2, limiting layer 3, N-type outside N-type
The ducting layer 5 of interior the 4, first undoped gradually changed refractive index of limiting layer, the 6, second undoped refractive index of Quantum well active district are gradually
The outer limiting layer 9 of limiting layer 8, p-type in the ducting layer 7 of change, p-type, corrosion barrier layer 10, p-type covering 11, p-type potential barrier graded bedding 12,
P-type potential barrier violent change layer 13 and p-shaped ohmic contact layer 14.Limiting layer 4 is tensile strain structure sheaf wherein in N-type, that is to say, that in N-type
Limiting layer 4 and the lattice of InP substrate 1 mismatch, and have tensile strain relative to InP substrate 1, the scope of tensile strain is 0.1-0.5%.
The SQW of Quantum well active district 6 is strained quantum well structure.The well layer of strained quantum well structure is compressive strain, should
Become the barrier layer of quantum well structure as tensile strain.The compressive strain of quantum well structure well layer is 0.8%-1.2%, thickness 5-8nm, quantum
The tensile strain of well structure barrier layer is 0.4%-0.8%, thickness 10-15nm.The SQW logarithm of strained quantum well structure is 6-9
It is right.By adding MQW（Quantum well structure）The thickness of active area, optical cavity volume can be effectively increased, reduce vertical distance light diverging
Angle.
Limiting layer 4 uses AlInAs materials in N-type, specifically using AlxIn(1-x)As materials, wherein X represent Al component, X
Scope between 0.44-0.478.Limiting layer 4 and the lattice of InP substrate 1 mismatch in N-type, and the lattice constant of InP substrate is
0.58688nm, and the lattice constant of limiting layer 4 is with Al in N-typexIn(1-x)Al components are different in As and different, its lattice constant
Relation with Al components x is：A=0.56614+0.039698x, as x=0.522, in N-type the lattice constant of limiting layer 4 with
InP substrate 1 matches.As x=0.478, a=0.58512, the lattice constant of limiting layer 4 matches with InP substrate 1 in N-type.When
AlxIn(1-x)When As Al components reduce by 0.468, its lattice constant a=0.58472nm, the lattice mismatch with InP substrate 1：
mismatch=（aepi-asub）/asub= （0.58688-0.58472）/0.58688=0.368%.As can be seen here with Al components
Reduction, the lattice constant of limiting layer 4 can become larger with the lattice mismatch of InP substrate 1 in N-type, and tensile strain also can phase
Strain is big.
The middle Al of limiting layer 4 in N-typexIn(1-x)As energy gap and Al components x relation are：Eg=0.24x2+2.35x
+ 0.36, as x=0.478, AlxIn(1-x)As energy gap is 1.537eV.Due to semiconductor refractive index at different wavelengths
It is in the relation of inverse correlation with its energy gap（Eg*n4=constant）, therefore, if making Al components x=0.468, i.e. AlxIn(1-x)As's
Al components reduce by 0.01, now, AlxIn(1-x)As energy gap is reduced to 1.512 eV, AlxIn(1-x)As refractive index can phase
It should increase.Because rate of decay of the photon in ducting layer depends on the refringence of ducting layer and interior limiting layer, difference is bigger,
Light is decayed faster in limiting layer.That is AlxIn(1-x)As Al components are reduced, and tensile strain also can be strained mutually greatly, and forbidden band is wide
Degree reduces, and its refractive index accordingly increases, and decay of the light in limiting layer is diminished, so that more luminous energy are extended to outer limitation
In layer InP, so as to reduce the far-field divergence angle of vertical direction.
But big with the change of tensile strain, AlInAs thickness should accordingly diminish, and not so can produce threading dislocation and have influence on
The quality of materials of source region.When the thickness of limiting layer 4 in N-type is 20-80nm, not over its critical thickness, it is preferable that limited in N-type
The thickness of preparative layer 4 is 30-60nm.
In addition, in order to further reduce vertical direction far-field divergence angle, the thickness of the outer limiting layers 3 of the utility model N-InP
Increase to 2-4um, further expand the width of vertical direction light field.After the increase of limiting layer thickness 3 outside InP, in order to not influence
The series resistance and threshold current of laser, the utility model use gradient doping outside InP in limiting layer 3, doping concentration from
3E18cm-3It is reduced to 1E18 cm-3。
The laser of the narrow vertical direction far-field divergence angle does not need insert layer, reduces parasitic capacitance and series resistance；Adopt
With the AlInAs of tensile strain, the refractive index of limiting layer is improved, decay of the light in limiting layer is reduced, allows light field to be extended to outer limitation
Layer；Outer limiting layer thickness increase, further expand the width of vertical direction light field；By these improvement, the laser of acquisition hangs down
Nogata reduces to far-field divergence angle.
The laser of the narrow vertical direction far-field divergence angle is in the preparation using electrical conductivity as 2-8E18cm-2InP as life
Long substrate, it is put into the MOCVD systems of Aixtron companies and grows.Chamber pressure is 50mbar, growth temperature 670
DEG C, with H2For carrier gas, trimethyl indium（TMIn）, trimethyl gallium（TMGa）, trimethyl aluminium（TMAl）, diethyl zinc（DEZn）, silicon
Alkane（SiH4）, arsine（AsH3）And phosphine（PH3）Deng for reaction source gas, N-InP cushions are grown successively, are limited outside N-InP
Layer, N-AlInAs limiting layers, the AlGaInAs lower waveguide layers of undoped gradually changed refractive index, the AlGaInAs quantum in 6 cycles
Trap, undoped gradually changed refractive index AlGaInAs on ducting layer, undoped AlInAs limiting layers, P-InP outer limiting layer, ripple
A length of 1100nm InGaAsP corrosion barrier layers, InP coverings and wavelength be 1300 nm InGaAsP potential barrier transition zones, ripple
A length of 1500nm InGaAsP potential barrier transition zones, and InGaAs ohmic contact layers etc., that is, form the outer of complete FP lasers
Prolong structure.After the completion of epitaxial structures growth, using known photoetching and etching technics, ridge waveguide structure is formed, then in ridge
Front electrode is deposited on waveguiding structure, and InP substrate is thinned, backplate is deposited in thinned InP substrate backs；In pipe
The film of certain reflective film rate is deposited in core both ends, that is, completes the making of narrow vertical far-field angle of divergence laser.
Limiting layer is tensile strain structure sheaf in the N-type of the laser, using AlInAs materials, with AlxIn(1-x)As materials
Al components reduce, its refractive index accordingly increases, and decay of the light in limiting layer is diminished, so that more luminous energy are extended to
In outer limiting layer InP, so as to reduce the far-field divergence angle of vertical direction, this laser does not increase extension ducting layer, by answering
Become and expand the light field of vertical direction, reduce the far-field divergence angle of the vertical direction of semiconductor laser, improve laser with
The coupling efficiency of optical fiber.As shown in Fig. 2 the far field diverging of laser vertical direction is obviously reduced（A curve is limitation below
The far field light diverging angular curve of laser after layer increase strained layer, above a curve be typical laser the far field light angle of divergence
Curve）.So the utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art can all be carried out without prejudice under spirit and scope of the present utility model to above-described embodiment
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by claim of the present utility model.
Claims (8)
1. a kind of laser of narrow vertical direction far-field divergence angle, it is characterised in that the epitaxial structure of the laser serves as a contrast including InP
Bottom（1）, in the InP substrate（1）On be sequentially depositing cushion from bottom to top（2）, the outer limiting layer of N-type（3）, limit in N-type
Layer（4）, the first undoped gradually changed refractive index ducting layer（5）, Quantum well active district (6), the second undoped refractive index gradually
Limiting layer (8), p-type outer limiting layer (9), corrosion barrier layer (10), p-type covering (11), p-type gesture in the ducting layer (7) of change, p-type
Build graded bedding (12), p-type potential barrier violent change layer (13), p-shaped ohmic contact layer (14), described Quantum well active district（6）For strain
Quantum well structure；Limiting layer in described N-type（4）For tensile strain structure sheaf, limiting layer in the N-type（4）Using AlInAs materials
Material.
A kind of 2. laser of narrow vertical direction far-field divergence angle according to claim 1, it is characterised in that：The strain
The well layer of quantum well structure is compressive strain, and the barrier layer of described strained quantum well structure is tensile strain.
A kind of 3. laser of narrow vertical direction far-field divergence angle according to claim 2, it is characterised in that：The strain
The well layer compressive strain of quantum well structure is 0.8%-1.2%, and the thickness of well layer is 5-8nm.
A kind of 4. laser of narrow vertical direction far-field divergence angle according to claim 2, it is characterised in that：The strain
The barrier layer tensile strain of quantum well structure is 0.4%-0.8%, and the thickness of barrier layer is 10-15nm.
A kind of 5. laser of narrow vertical direction far-field divergence angle according to claim 1, it is characterised in that：The strain
The SQW logarithm of quantum well structure is 6-9 pairs.
A kind of 6. laser of narrow vertical direction far-field divergence angle according to claim 1, it is characterised in that：The N-type
Interior limiting layer（4）Thickness be 30-60nm.
A kind of 7. laser of narrow vertical direction far-field divergence angle according to claim 1, it is characterised in that：The N-type
Outer limiting layer（3）Thickness be 2-4 um, the outer limiting layer of the N-type（3）Using gradient doping, doping concentration is from 3E18cm-3Drop
It is low to arrive 1E18 cm-3。
A kind of 8. laser of narrow vertical direction far-field divergence angle according to claim 1, it is characterised in that：The N-type
Interior limiting layer（4）The AlInAs materials used is AlxIn(1-x)As materials, its Al component X scope is 0.44-0.478, and it is special
Sign is：Limiting layer in the N-type（4）With InP substrate（1）Lattice mismatch, relative to InP substrate（1）There is 0.1-0.5%
Tensile strain.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621488960.8U CN206774873U (en) | 2016-12-30 | 2016-12-30 | A kind of laser of narrow vertical direction far-field divergence angle |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621488960.8U CN206774873U (en) | 2016-12-30 | 2016-12-30 | A kind of laser of narrow vertical direction far-field divergence angle |
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| Publication Number | Publication Date |
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| CN206774873U true CN206774873U (en) | 2017-12-19 |
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| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: EPIHOUSE OPTOELECTRONIC Co.,Ltd. Assignor: SUZHOU EPIHOUSE. CO.,LTD. Contract record no.: X2020110000021 Denomination of utility model: A laser with narrow vertical far-field divergence angle Granted publication date: 20171219 License type: Common License Record date: 20201118 |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230331 Address after: 361000 1st, 2nd and 3rd floors, No. 567, tonglong 2nd Road, industrial zone, torch high tech Zone (Xiang'an), Xiamen, Fujian Patentee after: EPIHOUSE OPTOELECTRONIC Co.,Ltd. Address before: Room E1107, 388 Ruoshui Road, Suzhou Industrial Park, Jiangsu Province, 215000 Patentee before: SUZHOU EPIHOUSE. CO.,LTD. |