CN206773072U - A kind of device of non-contact testing semi insulating semiconductor resistivity - Google Patents
A kind of device of non-contact testing semi insulating semiconductor resistivity Download PDFInfo
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- CN206773072U CN206773072U CN201720493350.5U CN201720493350U CN206773072U CN 206773072 U CN206773072 U CN 206773072U CN 201720493350 U CN201720493350 U CN 201720493350U CN 206773072 U CN206773072 U CN 206773072U
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Abstract
The utility model discloses a kind of device of non-contact testing semi insulating semiconductor resistivity, including digital oscilloscope, impulse generator, capacitive probe and sample stage, capacitive, which is popped one's head in, is arranged on the top of sample stage, metal electrode layer and insulator layer are stacked with the sample stage, testing sample is placed on metal electrode layer, metal electrode layer is connected with impulse generator, and impulse generator frequency, amplitude are adjustable；It is test surface that the capacitive probe, which includes connected electric capacity activity pole and charge amplifier, electric capacity activity pole one end, is arranged on the surface of testing sample, charge amplifier is connected with digital oscilloscope；Digital oscilloscope is used to show charging interval and voltage magnitude corresponding to measurement signal waveform.The utility model can read corresponding signal parameter by the measurement in charge and discharge process by non-contact mode measuring by digital oscilloscope, and then obtain the resistivity value of semi insulating semiconductor, have the advantages of measurement is accurate, simple in construction, cost is cheap.
Description
Technical field
The research field of semi insulating semiconductor resistivity measurement is the utility model is related to, more particularly to a kind of non-contact testing
The device of semi insulating semiconductor resistivity.
Background technology
Semi insulating semiconductor and the second generation and the resistivity of third generation semiconductor are 105~1012Ω cm, existing skill
The four probe method commonly used in art can not carry out accurate measurement to it, cause most of researchs, the unit of production semi insulating semiconductor
Without corresponding non-cpntact measurement equipment, therefore constrain the development of industry.
German SemiMap companies have developed a kind of resistivity measuring device for the problem, but the equipment has used essence
Close electronic slide unit, special charge amplifier and impulse generator, and need to be equipped with self-editing special-purpose software, structure is very multiple
It is miscellaneous, all have high requirements to experimental situation, mounting frame and level of operating personnel etc., cost is very high, is not suitable for carrying out general
And promote.
Therefore, a kind of simple in construction, measurement result of research is accurately used for the resistivity for carrying out semi insulating semiconductor material
The device of measurement has important value.
Utility model content
The shortcomings that the purpose of this utility model is to overcome prior art and deficiency, there is provided a kind of non-contact testing is semi-insulating
The device of semiconductor resistor rate, the device can realize contactless to semi insulating semiconductor, undamaged measurement, have operation letter
Just the advantages of, cost is low.
The purpose of this utility model is realized by following technical scheme：A kind of non-contact testing semi insulating semiconductor resistance
The device of rate, including digital oscilloscope, impulse generator, capacitive probe and sample stage, capacitive probe are arranged on the upper of sample stage
It is square, metal electrode and insulator are stacked with the sample stage, testing sample is placed on metal electrode, metal electrode and pulse
Generator is connected, and impulse generator frequency, amplitude are adjustable；The capacitive probe includes connected electric capacity activity pole and electric charge amplification
Device, electric capacity activity pole one end are test surface, are arranged on the surface of testing sample, and charge amplifier is connected with digital oscilloscope；
Digital oscilloscope is used to show charging interval and voltage magnitude corresponding to measurement signal waveform.
Preferably, the capacitive probe is fixed on a micromatic setting, and the micromatic setting is used to adjust electricity in capacitive probe
The end face of appearance activity pole and the distance on testing sample surface.By the device, the distance can be made to be maintained in appropriate scope,
It is adapted to the detection of different sample sizes.
Further, radome is provided with the capacitive probe, electric capacity activity pole is located in the radome, electric capacity activity
Pole is fixed on inside the radome one by made of insulating materials in fixing device.It thereby may be ensured that in measurement process up and down
Interelectrode electric fields uniform.
Preferably, the surface of metal electrode flatness is maintained within 5 μm.The processing modes such as flat stone mill can be used,
So as to be allowed to form good contact with testing sample bottom surface.
Further, the metal electrode is prepared using brass.Its temperature is set to keep at steady-state, preventing pair
Sample produces temperature effect, influences to test.
Preferably, the sample stage bottom is provided with a levelling device for being used to make sample stage carry out certain angle swing.From
And it can make to keep relatively parallel between sample stage and capacitive probe test end face.
Preferably, impulse generator provides frequency, the adjustable square wave of amplitude.So as to provide the stable pulse for charging
Voltage.
Preferably, the electric capacity activity pole uses a diameter of 1mm, 2mm or 3mm, 50-90mm copper rod is about, with sample
The end face flatness of platform opposite side is less than 5 μm, and the other end is connected by shielded cable with charge amplifier.
Preferably, the device of the non-contact testing semi insulating semiconductor resistivity is connected with an industrial computer, in industrial computer
A data collecting card is put, the bnc interface of data collecting card is directly connected with the device.Can collecting test letter by data collecting card
Number, and carried out data processing by the software systems in industrial computer and shown.
The utility model compared with prior art, has the following advantages that and beneficial effect：
1st, the carrier concentration and mobility of second generation semiconductor (GaAs, InP) are generally measured with Hall coefficient method at present,
Resistivity is calculated by the two parameters.Hall process needs cut crystal to make sample, and need to welding lead, operation on sample
It is cumbersome, and destroy chip.The measuring apparatus of existing semi insulating semiconductor is very expensive, complex operation, to user require compared with
It is high.The utility model provides the stable pulse voltage for charging to metal electrode by using impulse generator so that gold
Voltage between category electrode and electric capacity activity pole changes, this change this simple instrument by using digital oscilloscope
It can be observed, the calculating of the resistivity value of semi insulating semiconductor is can be used for according to the data of observation, is realized non-contacting
Measurement, at the same it is simple in construction, cost is cheap, can meet completely colleges and universities' experimental courses and study new product needs, contribute to
Colleges and universities and scientific research institution's research second generation, third generation semi-conducting material, promote the development of related industry.
2nd, the utility model can measured resistivity scope 105~1012Ω cm semi insulating semiconductor material, and
It is contactless to sample, undamaged measurement, this method can provide technical support to the research second generation, third generation semiconductor.
Brief description of the drawings
Fig. 1 is test structure schematic diagram of the present utility model；
Fig. 2 is the utility model sample schematic appearance；
Fig. 3 (a), (b) are the parallel-plate electrode schematic diagram and equivalent electric of the utility model sample and electric capacity activity pole respectively
Lu Tu；
Fig. 4 is the time-varying relationship figure of total electrical charge on the utility model equivalent circuit；
Fig. 5 is the reading exemplary plot of the utility model digital oscilloscope signal curve, wherein (a) figure is surveyed for voltage magnitude
Amount, (b) figure are used for time interval measurement.
Embodiment
The utility model is described in further detail with reference to embodiment and accompanying drawing, but implementation of the present utility model
Mode not limited to this.
Embodiment 1
As shown in figure 1, the device of the present embodiment non-contact testing semi insulating semiconductor resistivity, including impulse generator,
Sample stage, capacitive probe, micromatic setting, digital oscilloscope etc., each structure is specifically described below.
In the present embodiment, impulse generator is connected with sample stage, for providing frequency, amplitude adjustable square wave, according to sample
Product 105~1012Ω cm test scope, the impulse generator need to be in the range of frequency 1Hz-30KHz, amplitude 500mV-8V
Adjustment.
In the present embodiment, metal electrode and insulator are stacked with sample stage, testing sample is placed on metal electrode, gold
Category electrode is connected with impulse generator.Sample stage bottom is provided with a levelling device, and the device is in order to which sample stage and capacitive are popped one's head in
Test keeps relatively parallel between end face, and the levelling device can make sample stage have ± 2 ° of swing angle scope.Surface of metal electrode
Handled using flat stone mill, its flatness is maintained within 5 μm, make to form good contact with testing sample bottom surface；Metal electricity
Pole is prepared using brass, makes its temperature keep at steady-state, preventing from producing temperature effect to sample, influenceing to test.
In the present embodiment, capacitive, which is popped one's head in, is arranged on the top of sample stage, and is fixed on micromatic setting, and the micromatic setting is used
In the distance between regulation capacitive probe and sample stage.The capacitive probe includes connected electric capacity activity pole and electric charge amplification
Device, electric capacity activity pole one end are test surface, are arranged on the surface of testing sample, and charge amplifier is connected with digital oscilloscope.
In order to ensure the electric fields uniform in measurement process between upper/lower electrode, electric capacity activity pole is fixed on one in capacitive probe
In radome.The fixing device of radome and fixed capacity activity pole, which is adopted, to be made from an insulative material.In addition, in the present embodiment
Electric capacity activity pole can use a diameter of 1mm, 2mm or 3mm, be about 50-90mm copper rod, put down with the end face of sample stage opposite side
Whole degree is less than 5 μm, and the other end is connected by shielded cable with charge amplifier.So as to further improve the degree of accuracy of measurement.
In the present embodiment, the charge amplifier is low-noise charge amplifier, and its charge sensitivity is 500mV/Pc, band
A width of 0.1Hz-10MHz, output noise ＜ 10mV, output amplitude ＞ 600mV, the Ω of output impedance 50.
In the present embodiment, according to the difference of data reading mode, two kinds of hardware configurations can be used, one kind is to amplify electric charge
Device and a digital oscilloscope are connected, and digital oscilloscope is used to show charging interval and voltage magnitude corresponding to measurement signal waveform.
Then above-mentioned value is recorded by operator, and is manually computed or utilized other dedicated calculations according to corresponding calculation formula
Software is calculated, and finally gives result of calculation.Although this structure intelligence degree is slightly insufficient, advantage is hardware
Framework is simple, easy to operate, greatly reduces cost, and be particularly suitable for use in the occasions such as school experiment course.Another kind is by electric charge
Amplifier is connected with an industrial computer, a data collecting card built in industrial computer, and the bnc interface of data collecting card directly connects with the device
Connect.By data collecting card collecting test signal, and data processing is carried out by the software systems in industrial computer and is shown.
The intelligence degree of this structure is higher, can more meet the needs etc. of factory research new product.
As shown in Fig. 2 being the utility model sample schematic appearance, figure is that electric capacity activity pole induction region area is
A semi-conducting material, thickness d,
Its resistance：
Its electric capacity：
R can be obtained by (1) (2)SCS=ρ ε ε0。
As shown in figure 3, in test resistance rate, probe forms parallel plate capacitor with sample, as shown in Fig. 3 (a) figures,
Wherein, daIt is the air gap between electric capacity activity pole and sample, dsIt is the thickness of sample, is represented with the d in Fig. 2
Same implication, deIt is the gap of electrode and sample base.
Non-contact principle of the resistivity measurement method based on capacitor charge and discharge of the present embodiment, in test resistance rate, construction
One equivalent circuit, shown in its equivalent circuit diagram such as Fig. 3 (b).
CaBe capacitive probe sample between air layer electric capacity, CsFor the electric capacity of sample, RsIt is sample resistance.
Assuming that CaAnd CsAll it is that electric discharge is complete before test is started, and is zero moment at the time of start to test.At zero
Carve and add constant applied voltage U, momentary charge is carried out to electric capacity, total capacitance is：
Wherein
So in 0 moment electricity
Work as t>When 0 (t is the time), due to CsThere is voltage at both ends, it is possible to pass through RsElectric discharge.With CsThe progress of electric discharge,
CsThe voltage at both ends reduces, while CaThe voltage at both ends is raised and charged.So as t=∞, CsThe voltage at both ends is complete
Put only, and CaIn electricity be also that total electricity is Q (∞)=CaU。
When 0<t<During ∞, the formula of instant electricity Q (t) is
As shown in figure 4, be the time-varying relationship of total electrical charge on equivalent circuit, τ=R in figures(Cs+Ca), carry it into
RsCs=ρ ε ε0。
It can obtain
Again will(Q ∞)=CaU is substituted into, and can be obtained
ρ=Q (0) τ/Q (∞) ε ε0。
Wherein：ρ is the resistivity of sample, and τ is the relaxation coefficient of discharge and recharge, and Q (0) is 0 moment electricity, and Q (∞) is the time
Electricity during long enough, ε be sample dielectric constant, ε0For dielectric constant of air.
As shown in figure 5, to carry out the schematic diagram of number reading method on digital oscilloscope, by formula：
Wherein e=2.71828,
Charging process becomes after charge amplifier amplifies：V (t)=V (1-e-t/τ)+V (0), as shown in Fig. 5 (a).
In order to obtain τ values, take：V (τ)/V (∞)=1-e-t/τ,
As t=τ, V (τ)/V (∞)=1-e-τ/τ=1-e-1=1-0.3679=0.63212,
Therefore, V (τ)=0.63212 [V (∞)-V (0)], then as shown in Fig. 5 (b), according to V (τ) values from digital oscillography
τ values corresponding to being found out on device waveform.
Using exemplified by digital oscilloscope, when being tested, to perform as steps described below：
(1) power-on, testing sample is placed on metal electrode；
(2) end face of electric capacity activity pole and the distance of sample surfaces in capacitive probe are adjusted, and sample is observed by oscillograph
Product measurement signal, stop regulation when signal reaches optimum state；
(3) the output "+" end of impulse generator is connected with metal electrode, and "-" end is connected to the ground, unbalanced pulse generator,
Impulse generator applies low voltage pulse signal according to predetermined frequency and amplitude to metal electrode, between electrode and sample
The electric capacity of composition provides charging voltage, the change of electric capacity activity pole measuring electric quantity in real time, electric capacity activity pole and charge amplifier
It is connected, the electric charge amount of flow in series capacitance that charge amplifier measurement capacitive activity pole is formed with sample, and it is converted into voltage
It is output to digital oscilloscope；
(4) digital oscilloscope receives the voltage signal of charge amplifier output, and corresponding signal wave is shown by display screen
Shape, corresponding V (0), V (∞) value in measurement signal waveform are read, and calculate corresponding V (τ) value, then read by wavy curve
τ values corresponding to going out, the resistivity value of sample is calculated finally by above-mentioned calculation formula.
Above-described embodiment is the preferable embodiment of the utility model, but embodiment of the present utility model is not by above-mentioned
The limitation of embodiment, it is other it is any without departing from Spirit Essence of the present utility model with made under principle change, modify, replace
Generation, combination, simplify, should be equivalent substitute mode, be included within the scope of protection of the utility model.
Claims (9)
1. a kind of device of non-contact testing semi insulating semiconductor resistivity, it is characterised in that sent out including digital oscilloscope, pulse
Raw device, capacitive probe and sample stage, capacitive, which is popped one's head in, is arranged on the top of sample stage, be stacked with the sample stage metal electrode and
Insulator, testing sample are placed on metal electrode, and metal electrode is connected with impulse generator, impulse generator frequency, amplitude
It is adjustable；It is test surface that the capacitive probe, which includes connected electric capacity activity pole and charge amplifier, electric capacity activity pole one end, is set
In the surface of testing sample, charge amplifier is connected with digital oscilloscope；Digital oscilloscope is used to show measurement signal waveform
Corresponding charging interval and voltage magnitude.
2. the device of non-contact testing semi insulating semiconductor resistivity according to claim 1, it is characterised in that the appearance
Property probe be fixed on a micromatic setting, the micromatic setting be used for adjust capacitive probe in electric capacity activity pole end face and treat test sample
The distance on product surface.
3. the device of non-contact testing semi insulating semiconductor resistivity according to claim 1, it is characterised in that the appearance
Property probe in be provided with radome, electric capacity activity pole is located in the radome, electric capacity activity pole be fixed on the radome inside one consolidate
Determine on device, the fixing device is made up of insulating materials.
4. the device of non-contact testing semi insulating semiconductor resistivity according to claim 1, it is characterised in that the gold
Category electrode surface flatness is maintained within 5 μm.
5. the device of non-contact testing semi insulating semiconductor resistivity according to claim 4, it is characterised in that the gold
Belong to electrode to prepare using brass.
6. the device of non-contact testing semi insulating semiconductor resistivity according to claim 1, it is characterised in that the sample
Sample platform bottom is provided with a levelling device for being used to make sample stage carry out certain angle swing.
7. the device of non-contact testing semi insulating semiconductor resistivity according to claim 1, it is characterised in that pulse is sent out
Raw device provides frequency, the adjustable square wave of amplitude.
8. the device of non-contact testing semi insulating semiconductor resistivity according to claim 1, it is characterised in that the electricity
Appearance activity pole uses a diameter of 1mm, 2mm or 3mm, and long 50-90mm copper rod is small with the end face flatness of sample stage opposite side
In 5 μm, the other end is connected by shielded cable with charge amplifier.
9. the device of non-contact testing semi insulating semiconductor resistivity according to claim 1, it is characterised in that described non-
The device of engaged test semi insulating semiconductor resistivity is connected with an industrial computer, and a data collecting card built in industrial computer, data are adopted
The bnc interface of truck is directly connected with the device.
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| CN201720493350.5U CN206773072U (en) | 2017-05-05 | 2017-05-05 | A kind of device of non-contact testing semi insulating semiconductor resistivity |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108152354A (en) * | 2018-02-05 | 2018-06-12 | 四川大学 | A kind of dielectric material surface charge self-operated measuring unit based on two axis slide units |
| CN113406392A (en) * | 2021-06-16 | 2021-09-17 | 国网安徽省电力有限公司电力科学研究院 | Resistance measuring device and resistance measuring method in cable buffer layer ablation process |
| CN113484611A (en) * | 2021-07-28 | 2021-10-08 | 广州昆德半导体测试技术有限公司 | Semi-insulating semiconductor mobility magnetic resistance effect measuring method and instrument |
-
2017
- 2017-05-05 CN CN201720493350.5U patent/CN206773072U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108152354A (en) * | 2018-02-05 | 2018-06-12 | 四川大学 | A kind of dielectric material surface charge self-operated measuring unit based on two axis slide units |
| CN113406392A (en) * | 2021-06-16 | 2021-09-17 | 国网安徽省电力有限公司电力科学研究院 | Resistance measuring device and resistance measuring method in cable buffer layer ablation process |
| CN113406392B (en) * | 2021-06-16 | 2022-05-03 | 国网安徽省电力有限公司电力科学研究院 | Resistance measuring device and resistance measuring method in cable buffer layer ablation process |
| CN113484611A (en) * | 2021-07-28 | 2021-10-08 | 广州昆德半导体测试技术有限公司 | Semi-insulating semiconductor mobility magnetic resistance effect measuring method and instrument |
| CN113484611B (en) * | 2021-07-28 | 2024-03-29 | 广州昆德半导体测试技术有限公司 | Semi-insulating semiconductor mobility magneto-resistance effect measuring method and instrument |
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