CN206758461U - Novel light-emitting diode based on surface plasma waveguide - Google Patents
Novel light-emitting diode based on surface plasma waveguide Download PDFInfo
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- CN206758461U CN206758461U CN201720581389.2U CN201720581389U CN206758461U CN 206758461 U CN206758461 U CN 206758461U CN 201720581389 U CN201720581389 U CN 201720581389U CN 206758461 U CN206758461 U CN 206758461U
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Abstract
The utility model discloses the novel light-emitting diode based on surface plasma waveguide, it is characterized in that, n GaAs layers, InGaN GaAs multiple quantum well layers, p GaAs layers and the Ag metal grating layers spliced including sequence from low to uper part, the p GaAs layers are etched with optical grating construction ITO cushions.This diode can improve LED light extraction efficiency, increase light transmission, can strengthen LED electrology characteristic, realize LED light extraction efficiency enhancing, provide a kind of new antetype device to prepare efficient LED chip.
Description
Technical field
It the utility model is related to technical field of semiconductors, specifically a kind of novel light-emitting two based on surface plasma waveguide
Pole pipe.
Background technology
Surface plasma excimer (Surface plasmon polariton, abbreviation SPP) is by changing metal surface
Sub-wavelength structure realize a kind of light wave and transportable surface charge between electromagnet mode, metal and medium interface can be supported
The surface plasma-wave of transmission, so as to transmit light energy, and it is not limited by diffraction limit.Gallium arsenide light emitting diode
（Light-emitting diode, abbreviation LED）Have been realized in the application in many fields, but current emitting led efficiency
Raising is still research Main way.More representational is 2004,《Nature Materials》The Okamoto delivered
" the Surface-plasmon-enhanced light emitters based on InGaN quantum wells " of team
Propose and SPs technologies are introduced in InGaN/GaN SQWs LED to improve LED luminous efficiency, under certain conditions, swash
Hair produces the SPs of high intensity, it is possible to increase the internal quantum efficiency of the LED centres of luminescence.More people excitement is 2010,
《Nanotechnology》" the Surface plasmon-enhanced light-emitting of the CHU team delivered
Diodes using silver nanoparticles embedded in p-GaN ", they utilize electron beam evaporation technique
Ag films are covered on InGaN-GaN MQWs (MQWs), then by thermal anneal process, generate one layer of Ag nano particle,
So that LED luminous efficiency significantly increases, claim that external quantum efficiency improves 38%.But from the point of view of current achievement in research, room temperature
Under quantum efficiency it is still very low, the growth quality of semi-conducting material still differs greatly with transistor device, and this is also serious
Constrain the development of LED industry.
In terms of mostly concentrating on process optimization for light emitting diode research at present, for new technology binding compared with
It is few.
Utility model content
The purpose of this utility model is in view of the shortcomings of the prior art, and to provide a kind of based on the new of surface plasma waveguide
Type light emitting diode.This diode can improve LED light extraction efficiency, the electricity spy for increasing the transmission of light, can strengthening LED
Property, realize LED light extraction efficiency enhancing, provide a kind of new antetype device to prepare efficient LED chip.
Realizing the technical scheme of the utility model purpose is：
Based on the novel light-emitting diode of surface plasma waveguide, including sequence from low to uper part splice n-GaAs layers,
InGaN-GaAs multiple quantum well layers, p-GaAs layers and Ag metal grating layers, the p-GaAs layers are etched with optical grating construction ITO bufferings
Layer.
The optical grating construction is periodically wedge-shaped optical grating construction.
The Ag metal grating layers and optical grating construction ITO cushions are typical metal-dielectric structure.
In p-GaAs layer etching period wedge shape optical grating constructions, by carrying out roughening treatment to p-GaAs surfaces, by increasing capacitance it is possible to increase
The lighting area of luminescent layer radiant light, the light that those are totally reflected is set to be projected from different faces, increasing light outgoing
Escape angle, and then improve LED light extraction efficiency；ITO cushions have highly transmissive in visible light wave range, by increasing capacitance it is possible to increase light
Transmission, the light being reflected back inside LED is reduced, and ITO cushions have the function that current expansion, can strengthen LED electricity
Characteristic.
The Ag metal grating layers and ITO cushions are typical metal-dielectrics as a result, it is possible to realize SPP photon locals
Change, when LED emission wavelength is with SPP photon resonance consistent wavelengths, exciton relaxation speed can be caused to increase substantially, accelerated
The recombination radiation speed of electron-hole pair in LED, improve LED internal quantum efficiency.
The periodicity wedge shape optical grating construction can be by the compound energy coupling for producing exciton of electron-hole to SPP mode
In,
By designing the periodic structure of Ag gratings, the exit direction of radiant light can be controlled, in specific direction, grating energy
More than the 70% of enough concentrated radiation energy, greatly improve LED external quantum efficiency.
This light emitting diode has very strong humidification to LED light extraction efficiency, and Ag metal gratings can not only excite
SPP is produced, promotes the spontaneous emission rate of exciton, and the light of free space the light being limited in inside LED, can be changed into
It radiate, meanwhile, it can control the exit direction of radiant light, periodically wedge-shaped optical grating construction, for plane contact,
The injection area of electric current is added, reduces the congestion of electric current, increases the lighting area of luminescent layer radiant light, those is all-trans
The light penetrated can project from different faces, and the escape angle of increasing light outgoing, ITO cushions have highly transmissive in visible light wave range
Property, by increasing capacitance it is possible to increase the transmission of light, the light being reflected back inside LED is reduced, and ITO cushions have the function that current expansion, energy
Enough strengthen LED electrology characteristic.
This light emitting diode provides new prototype structure for preparing efficient LED chip.
This diode can improve LED light extraction efficiency, the increase transmission of light, the electrology characteristic that can strengthen LED, reality
The enhancing of existing LED light extraction efficiency, a kind of new antetype device is provided to prepare efficient LED chip.
Brief description of the drawings
Fig. 1 is the structural representation of embodiment.
In figure, the ITO cushions 5.Ag of 1. n-GaAs layer 2.InGaN-GaAs multiple quantum well layer 3.p-GaAs layers 4.
Metal grating layer.
Embodiment
The utility model content is further elaborated with reference to the accompanying drawings and examples, but is not that the utility model is limited
It is fixed.
Embodiment：
Reference picture 1, based on the novel light-emitting diode of surface plasma waveguide, including the n- that sequence from low to uper part splices
GaAs layers 1, InGaN-GaAs multiple quantum well layers 2, p-GaAs layers 3 and Ag metal grating layers 5, the p-GaAs layers 3 are etched with light
Grid structure I TO cushions 4.
The optical grating construction is periodically wedge-shaped optical grating construction.
The Ag metal grating layers 5 and optical grating construction ITO cushions 4 are typical metal-dielectric structure.
In p-GaAs layer etching period wedge shape optical grating constructions, by carrying out roughening treatment to p-GaAs surfaces, by increasing capacitance it is possible to increase
The lighting area of luminescent layer radiant light, the light that those are totally reflected is set to be projected from different faces, increasing light outgoing
Escape angle, and then improve LED light extraction efficiency；ITO cushions 4 have highly transmissive in visible light wave range, by increasing capacitance it is possible to increase light
Transmission, reduce and be reflected back light inside LED, and ITO cushions 4 have the function that current expansion, can strengthen LED electricity
Learn characteristic.
The Ag metal grating layers 5 and ITO cushions 4 are typical metal-dielectrics as a result, it is possible to realize SPP photons office
Domain, when LED emission wavelength is with SPP photon resonance consistent wavelengths, exciton relaxation speed can be caused to increase substantially, accelerated
The recombination radiation speed of electron-hole pair in LED, improve LED internal quantum efficiency.
The periodicity wedge shape optical grating construction can be by the compound energy coupling for producing exciton of electron-hole to SPP mode
In,
By designing the periodic structure of Ag gratings, the exit direction of radiant light can be controlled, in specific direction, grating energy
More than the 70% of enough concentrated radiation energy, greatly improve LED external quantum efficiency.
This light emitting diode has very strong humidification to LED light extraction efficiency, and Ag metal gratings can not only excite
SPP is produced, promotes the spontaneous emission rate of exciton, and the light of free space the light being limited in inside LED, can be changed into
It radiate, meanwhile, it can control the exit direction of radiant light, periodically wedge-shaped optical grating construction, for plane contact,
The injection area of electric current is added, reduces the congestion of electric current, increases the lighting area of luminescent layer radiant light, those is all-trans
The light penetrated can project from different faces, and the escape angle of increasing light outgoing, ITO cushions have highly transmissive in visible light wave range
Property, by increasing capacitance it is possible to increase the transmission of light, the light being reflected back inside LED is reduced, and ITO cushions have the function that current expansion, energy
Enough strengthen LED electrology characteristic.
Claims (3)
1. based on the novel light-emitting diode of surface plasma waveguide, it is characterized in that, including the n- that sequence from low to uper part splices
GaAs layers, InGaN-GaAs multiple quantum well layers, p-GaAs layers and Ag metal grating layers, the p-GaAs layers are etched with optical grating construction
ITO cushions.
2. the novel light-emitting diode of surface plasma waveguide according to claim 1, it is characterized in that, the optical grating construction
For periodically wedge-shaped optical grating construction.
3. the novel light-emitting diode of surface plasma waveguide according to claim 1, it is characterized in that, the Ag metals light
Gate layer 5 and optical grating construction ITO cushions are typical metal-dielectric structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720581389.2U CN206758461U (en) | 2017-05-24 | 2017-05-24 | Novel light-emitting diode based on surface plasma waveguide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720581389.2U CN206758461U (en) | 2017-05-24 | 2017-05-24 | Novel light-emitting diode based on surface plasma waveguide |
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| CN206758461U true CN206758461U (en) | 2017-12-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086259A (en) * | 2017-05-24 | 2017-08-22 | 广西师范大学 | Novel light-emitting diode based on surface plasma waveguide |
-
2017
- 2017-05-24 CN CN201720581389.2U patent/CN206758461U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107086259A (en) * | 2017-05-24 | 2017-08-22 | 广西师范大学 | Novel light-emitting diode based on surface plasma waveguide |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171215 Termination date: 20180524 |