CN206742244U - A kind of one-way low-capacitance TVS diode - Google Patents
A kind of one-way low-capacitance TVS diode Download PDFInfo
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Abstract
A kind of one-way low-capacitance TVS diode is the utility model is related to, including：P+ substrates；First N-type epitaxy layer, it is formed on P+ substrates；Second N-type epitaxy layer, it is formed in the first N-type epitaxy layer；First n type buried layer area, the second n type buried layer area and p type buried layer area, are both formed in the first N-type epitaxy layer and extend in P+ substrates and the second N-type epitaxy layer, and the second n type buried layer area is connected with the first n type buried layer area；N-type doping area, it is formed in the second N-type epitaxy layer and is connected with the first n type buried layer area；P-type injection region, it is formed in the second N-type epitaxy layer and is connected with p type buried layer area；P+ injection regions and N+ injection regions, are both formed in the second N-type epitaxy layer；Oxide layer, it is formed in the second N-type epitaxy layer；Metal level, it is formed in oxide layer；Passivation layer, it is formed on metal level；Layer gold is carried on the back, is formed at P+ substrate backs.The electric capacity of TVS diode of the present utility model is 0.3pF, meets HDMI3.0 application demand.
Description
Technical field
It the utility model is related to a kind of TVS diode, more particularly to a kind of one-way low-capacitance TVS diode.
Background technology
With the fast development of semiconductor technology, the critical size of integrated circuit is less and less, and operating voltage is also increasingly
It is low, but complete machine end is constantly present unpredictable surge and static discharge（ESD）, will if not carrying out corresponding protection
Carry out destructive damage to chip belt.Therefore with TVS（Transient Voltage Suppressor）I.e. transient voltage suppresses
Device is widely used in surge and the ESD ends of product for the protective device of representative.In high-frequency signal interface section, data transfer speed
Rate is more and more faster, therefore also more and more higher, TVS reaction speed are determined by the junction capacity of TVS diode to TVS frequency requirement
It is fixed, if the excessive loss that will cause high-frequency signal of TVS electric capacity, HDMI3.0 (High-Definition Multimedia
Interface, abbreviation HDMI, HDMI) interface be even more require that the electric capacity of TVS diode is less than 0.5pF.
Utility model content
The utility model overcomes the deficiencies in the prior art, there is provided a kind of application demand for meeting HDMI3.0 it is unidirectional low
Capacitance TVS diode.
To reach above-mentioned purpose, the technical solution adopted in the utility model is：A kind of one-way low-capacitance TVS diode, bag
Include：
P+ substrates；
First N-type epitaxy layer, it is formed on the P+ substrates；
Second N-type epitaxy layer, it is formed in first N-type epitaxy layer；
First n type buried layer area, the second n type buried layer area and p type buried layer area, are both formed in first N-type epitaxy layer simultaneously
Extend in the P+ substrates and second N-type epitaxy layer, the second n type buried layer area and the first n type buried layer area phase
Connection；
N-type doping area, it is formed in second N-type epitaxy layer and is connected with the first n type buried layer area；
P-type injection region, it is formed in second N-type epitaxy layer and is connected with the p type buried layer area；
P+ injection regions and N+ injection regions, it is both formed in second N-type epitaxy layer；
Oxide layer, it is formed in second N-type epitaxy layer；
Metal level, it is formed in the oxide layer；
Passivation layer, it is formed on the metal level；
Layer gold is carried on the back, is formed at the P+ substrate backs.
In one preferred embodiment of the utility model, a kind of one-way low-capacitance TVS diode further comprises the P+ linings
The resistivity at bottom is 0.02-0.04 ohm.cm.
In one preferred embodiment of the utility model, a kind of one-way low-capacitance TVS diode further comprises the first N
The resistivity of type epitaxial layer is 38ohm.cm, and the thickness of first N-type epitaxy layer is 16 μm.
In one preferred embodiment of the utility model, a kind of one-way low-capacitance TVS diode further comprises the 2nd N
The resistivity of type epitaxial layer is 38ohm.cm, and the thickness of second N-type epitaxy layer is 13 μm.
In one preferred embodiment of the utility model, a kind of one-way low-capacitance TVS diode further comprises the oxidation
The thickness of layer is 1 μm.
In one preferred embodiment of the utility model, a kind of one-way low-capacitance TVS diode further comprises the metal
The thickness of layer is 4 μm.
The utility model solves defect present in background technology, and the electric capacity of TVS diode of the present utility model is
0.3pF, meet HDMI3.0 application demand, it is ensured that the transmission speed and transmission quality of signal.
Brief description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples.
Fig. 1 is the structural representation of preferred embodiment of the present utility model；
Fig. 2 is the equivalent circuit diagram of preferred embodiment of the present utility model；
In figure：2nd, P+ substrates, the 4, first N-type epitaxy layer, the 6, second N-type epitaxy layer, the 8, first n type buried layer area, 10, second
N type buried layer area, 12, p type buried layer area, 14, n-type doping area, 16, p-type injection region, 18, P+ injection regions, 20, N+ injection regions, 22,
Oxide layer, 24, metal level, 26, passivation layer, 28, back of the body layer gold.
Embodiment
The utility model is described in further detail presently in connection with drawings and examples, these accompanying drawings are simplified
Schematic diagram, only illustrate basic structure of the present utility model in a schematic way, therefore it only shows the structure relevant with the utility model
Into.
As shown in figure 1, a kind of one-way low-capacitance TVS diode, including P+ substrates 2, the first N-type epitaxy layer 4, the second N-type
Epitaxial layer 6, the first n type buried layer area 8, the second n type buried layer area 10, p type buried layer area 12, n-type doping area 14, p-type injection region 16, P+
Injection region 18, N+ injection regions 20, oxide layer 22, metal level 24, passivation layer 26 and back of the body layer gold 28.
P+ substrates 2, it is P type substrate, and preferably P+ substrates are<100>Crystal orientation, resistivity are 0.02-0.04 Ohm.cm, compared with
Small resistivity ensure that the TVS diode has less bulk resistor, so as to possess more preferable clamper function.
First N-type epitaxy layer 4, is formed on P+ substrates 2, and preferably the resistivity of the first N-type epitaxy layer 4 is 38Ohm.cm,
16 μm of the thickness of first N-type epitaxy layer 4, cushion of first N-type epitaxy layer 4 as TVS, it is ensured that the substrate impurity of high concentration is not
It can diffuse up, the first N-type epitaxy layer 4 forms diode D1 with P+ substrates 2.
Second N-type epitaxy layer 6, it is formed in the first N-type epitaxy layer 4, the resistivity of preferably the second N-type epitaxy layer 6 is
38Ohm.cm, the thickness of the second N-type epitaxy layer 6 is 13 μm.
First n type buried layer area 8, the second n type buried layer area 10 and p type buried layer area 12, are both formed in 4 in the first N-type epitaxy layer
And extend in the N-type epitaxy layer 6 of P+ substrates 2 and second, the second n type buried layer area 10 is connected with the first n type buried layer area 8, forms N
The path of type；Specifically, the first n type buried layer area 8 is by ion implanting 7.5E15 ions/c ㎡, energy 70KeV phosphorus and formed,
One n type buried layer area 8 and P+ substrates 2 form TVS diode D2；Specifically, the second n type buried layer area 10 by ion implanting 3E15 from
Son/c ㎡, energy 70KeV antimony and formed；Specifically, p type buried layer area 12 passes through ion implanting 1.48E15 ions/c ㎡, energy
70KeV boron and formed.
N-type doping area 14, it is formed in the second N-type epitaxy layer 6 and is connected with the first n type buried layer area 8, form isolation
Area；Specifically, n-type doping area 14 is the boiler tube by 1000 DEG C, POCl is passed through3Gas is doped to be formed.
P-type injection region 16, it is formed in the second N-type epitaxy layer 6 and is connected with p type buried layer area 12, form isolated area；
Specifically, p-type injection region 16 is by ion implanting 1.25E15 ions/c ㎡, energy 70KeV boron and formed.
P+ injection regions 18 and N+ injection regions 20, it is both formed in the second N-type epitaxy layer 6, outside the N-type of P+ injection regions 18 and second
Prolong layer 6 and form diode D3；Specifically, P+ injection regions 18 are by ion implanting 7E15 ions/c ㎡, energy 70KeV boron and
Formed；Specifically, N+ injection regions 20 are the boiler tubes by 1000 DEG C, 400mL/min POCl is passed through3Gas is carried out for 60 minutes
Doping forms, and the N+ injection regions 20 of high concentration, which serve, reduces the contact resistance that front metal contacts with silicon chip.
Oxide layer 22, it is formed in the second N-type epitaxy layer 6；It is preferred that the thickness of oxide layer 22 is 1 μm, by photoetching in oxygen
Change layer 22 in correspond to P+ injection regions 18 and the position opening contact hole of N+ injection regions 20, after contact hole ends, deposit front metal it
Before, silicon chip is needed to be put into evaporator, takes 7g goldc grains, and by 925 DEG C, the pyroprocess of 10 hours, gold is steamed from the back side of silicon chip
Hair is diffused to inside silicon chip, and gold atom can form complex centre after entering silicon chip inside, reduce minority carrier life time, will be low so as to play
The effect of diode D3 electric capacity.Diode D3 and TVS diode D2 passes through the second N-type epitaxy layer 6 and the phase of the first n type buried layer area 8
Connection because the very low only 0.3pF of D3 electric capacity, and because D3 and D2 connect, TVS diode D2 extensions be also reduced by for
0.3pF or so.Using this mode for expanding gold, TVS electric capacity complies fully with the demand of HDMI3.0 high-speed ports.
Metal level 24, it is formed in oxide layer 22；Specifically, metal level 24 is formed by 4 μm of AlSiCu deposits, 4 μm
Thickness ensure that the reliability that copper cash is beaten in encapsulation process.
Passivation layer 26, it is formed on metal level 24；Preferred passivation layers 26 are folded by 1 μm of phosphorosilicate glass and 1 μm of silicon nitride
Add and form, protect metal level 24, add the reliability of TVS diode.
Layer gold 28 is carried on the back, the back side of P+ substrates 2 is formed at, the TVS diode thickness is thinned to 150 μm using mechanical reduction, P
The back side of+substrate 2 forms back of the body layer gold 26 and is used as backplate by the technique of evaporated metal.
The equivalent circuit diagram of the TVS structures is as shown in Fig. 2 because D1 breakdown voltage is very high, probably in 70V or so, D2
For TVS diode, breakdown voltage is in 5V or so, and when I/O connects positive potential and voltage is more than 5V, D2 can be breakdown, D3 forward conductions,
Again because series diode D3 electric capacity be 0.3pF, D2 and D3 total capacitance also in 0.3pF or so, fully meet high frequency
TVS electric capacity need to be less than 0.5pF requirement in circuit.
It is above enlightenment according to desirable embodiment of the present utility model, it is complete by above-mentioned description, related personnel
Various changes and amendments can be carried out in the range of without departing from this item utility model technological thought.This item utility model
Technical scope be not limited to content on specification, it is necessary to determine the technical scope according to the scope of the claims.
Claims (6)
- A kind of 1. one-way low-capacitance TVS diode, it is characterised in that including：P+ substrates；First N-type epitaxy layer, it is formed on the P+ substrates；Second N-type epitaxy layer, it is formed in first N-type epitaxy layer；First n type buried layer area, the second n type buried layer area and p type buried layer area, are both formed in first N-type epitaxy layer and extend Into the P+ substrates and second N-type epitaxy layer, the second n type buried layer area is connected with the first n type buried layer area；N-type doping area, it is formed in second N-type epitaxy layer and is connected with the first n type buried layer area；P-type injection region, it is formed in second N-type epitaxy layer and is connected with the p type buried layer area；P+ injection regions and N+ injection regions, it is both formed in second N-type epitaxy layer；Oxide layer, it is formed in second N-type epitaxy layer；Metal level, it is formed in the oxide layer；Passivation layer, it is formed on the metal level；Layer gold is carried on the back, is formed at the P+ substrate backs.
- A kind of 2. one-way low-capacitance TVS diode according to claim 1, it is characterised in that the resistance of the P+ substrates Rate is 0.02-0.04 ohm.cm.
- A kind of 3. one-way low-capacitance TVS diode according to claim 1, it is characterised in that first N-type epitaxy layer Resistivity be 38ohm.cm, the thickness of first N-type epitaxy layer is 16 μm.
- A kind of 4. one-way low-capacitance TVS diode according to claim 1, it is characterised in that second N-type epitaxy layer Resistivity be 38ohm.cm, the thickness of second N-type epitaxy layer is 13 μm.
- A kind of 5. one-way low-capacitance TVS diode according to claim 1, it is characterised in that the thickness of the oxide layer For 1 μm.
- A kind of 6. one-way low-capacitance TVS diode according to claim 1, it is characterised in that the thickness of the metal level For 4 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720267499.1U CN206742244U (en) | 2017-03-20 | 2017-03-20 | A kind of one-way low-capacitance TVS diode |
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| CN201720267499.1U CN206742244U (en) | 2017-03-20 | 2017-03-20 | A kind of one-way low-capacitance TVS diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390415A (en) * | 2018-11-23 | 2019-02-26 | 山东农业工程学院 | A kind of cache switching diodes chip and production technology |
| CN111463291A (en) * | 2019-01-18 | 2020-07-28 | 徐州市晨创电子科技有限公司 | Bidirectional TVS diode and preparation method thereof |
| CN117174761A (en) * | 2023-11-02 | 2023-12-05 | 富芯微电子有限公司 | Voltage asymmetric bidirectional TVS device and manufacturing method thereof |
-
2017
- 2017-03-20 CN CN201720267499.1U patent/CN206742244U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390415A (en) * | 2018-11-23 | 2019-02-26 | 山东农业工程学院 | A kind of cache switching diodes chip and production technology |
| CN109390415B (en) * | 2018-11-23 | 2024-03-22 | 山东农业工程学院 | High-speed switch diode chip and production process |
| CN111463291A (en) * | 2019-01-18 | 2020-07-28 | 徐州市晨创电子科技有限公司 | Bidirectional TVS diode and preparation method thereof |
| CN117174761A (en) * | 2023-11-02 | 2023-12-05 | 富芯微电子有限公司 | Voltage asymmetric bidirectional TVS device and manufacturing method thereof |
| CN117174761B (en) * | 2023-11-02 | 2024-01-05 | 富芯微电子有限公司 | Voltage asymmetric bidirectional TVS device and manufacturing method thereof |
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