CN206731273U - A kind of irregular semi-conducting material breaker - Google Patents
A kind of irregular semi-conducting material breaker Download PDFInfo
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- CN206731273U CN206731273U CN201720590359.8U CN201720590359U CN206731273U CN 206731273 U CN206731273 U CN 206731273U CN 201720590359 U CN201720590359 U CN 201720590359U CN 206731273 U CN206731273 U CN 206731273U
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Abstract
The utility model discloses a kind of irregular semi-conducting material breaker, it is related to material fragmentation field, the device includes：Process chamber, high-voltage pulse generator and electrode assemblie, the broken container of upward opening is placed with process chamber, broken container is used to hold irregular semi-conducting material to be broken, high-voltage pulse generator is electrically connected with electrode assemblie, electrode assemblie is arranged above broken container, high-voltage pulse generator is used to send high-voltage pulse signal to irregular semi-conducting material to be broken by electrode assemblie, the device can realize that the distributed inductance of the electrode assemblie crushed by high-voltage pulse signal in semi-conducting material and the utility model is relatively low, discharging efficiency can be effectively improved, therefore crushing efficiency is higher, fragmentation procedure is carried out in process fluid simultaneously, effectively semi-conducting material is avoided to be contaminated.
Description
Technical field
Material fragmentation field is the utility model is related to, especially a kind of irregular semi-conducting material breaker.
Background technology
Silicon crystal unit for manufacturing semiconductor equipment is made usually using following method：Polysilicon is generated by Siemens Method
Block, polysilicon block is broken into fritter, then using broken obtained silicon fragment as raw material, using pulling of crystals autofrettage
The monocrystalline silico briquette of (Czochralski, CZ method) generation cylinder, silicon crystal unit is made to the cut-out grinding of monocrystalline silico briquette.
When polysilicon block is carried out into broken, currently used method be it is artificial using hammer beat it is broken, this
On the one hand breaking method easily introduces the polysilicon of impurity pollution high-purity, another aspect crushing efficiency is also very low.
Utility model content
The present inventor is regarding to the issue above and technical need, it is proposed that a kind of irregular semi-conducting material breaker, should
Device is crushed by high-voltage pulse signal to irregular semi-conducting material, and cross pollution is smaller, and automaticity is high, broken
Broken efficiency is higher.
The technical solution of the utility model is as follows：
A kind of irregular semi-conducting material breaker, the device include：Process chamber, high-voltage pulse generator and electrode group
Part, the broken container of upward opening being placed with process chamber, broken container is used to hold irregular semi-conducting material to be broken,
High-voltage pulse generator is electrically connected with electrode assemblie, and electrode assemblie is arranged above broken container, and high-voltage pulse generator is used for
High-voltage pulse signal is sent to irregular semi-conducting material to be broken by electrode assemblie；Technique stream is filled with process chamber
Body, electrode tip and irregular semi-conducting material to be broken in broken container, electrode assemblie are submerged in process fluid；
Electrode assemblie includes central electrode, two side joint earth polars, central electrode head, ground electrode tip and support insulator,
Central electrode is arranged on inside support insulator, and two side joint earth polars are separately positioned on the both sides external of support insulator and with
Heart electrode mutually insulate, and one end of central electrode is electrically connected with high-voltage pulse generator, and the other end is electrically connected with central electrode head, in
Electrocardio cartridge is set towards broken container vertically downward, ground electrode tip and central electrode head be arranged oppositely and with central electrode head
Between discharging gap be present, ground electrode tip is connected to two side joint earth polars by metal tie rods.
Its further technical characteristic is that irregular semi-conducting material to be broken fills up broken container, electrode assemblie
Fore-and-aft distance between bottom and the upper edge of broken container is 10mm-20mm.
Its further technical characteristic is that central electrode is made of red copper, and central electrode head and ground electrode tip use
Copper-tungsten is made.
Its further technical characteristic is that device includes at least two broken containers, and at least two broken containers are alternately set
Put in the process chamber.
Its further technical characteristic is that metal tie rods include a transverse connecting rod and two longitudinally connected bars, then
Ground electrode tip is connected to two side joint earth polars by metal tie rods, including：Ground electrode tip is arranged on transverse connecting rod
Center is simultaneously electrical connected with transverse connecting rod, and the both ends of transverse connecting rod connect a longitudinally connected bar respectively, each vertical
A side joint earth polar is connected to connecting rod.
Advantageous effects of the present utility model are：
1st, the device can be realized crushes semi-conducting material by high-voltage pulse signal, and broken automaticity is high, breaks
Broken efficiency is higher.
2nd, two electric currents in the structure of the electrode assemblie used in the device be present and surround loop so that whole electrode assemblie
Distributed inductance it is relatively low, discharging efficiency can be effectively improved, so as to improve crushing efficiency.
3rd, process fluid is filled with process chamber, fragmentation procedure is carried out in process fluid, effectively avoids semi-conducting material
It is contaminated, it is ensured that the purity of the semi-conducting material after broken.
4th, the fore-and-aft distance between the electrode assemblie in the device and the upper edge of broken container is 10mm-20mm, can be with
The contact of semi-conducting material of the electrode assemblie with protruding broken container upper edge is effectively avoided, while can also keep preferably putting
Electrical efficiency.
5th, the breaker for being used to hold irregular semi-conducting material to be broken in the device is interchangeable, at one
Breaker is placed in the process chamber, can be broken to another when being crushed to the semi-conducting material in the breaker
The filler that device synchronizes, the continuous work of the device is realized, further improves crushing efficiency.
Brief description of the drawings
Fig. 1 is a kind of structural representation of irregular semi-conducting material breaker disclosed in the utility model.
Fig. 2 is the structural representation of the electrode assemblie in irregular semi-conducting material breaker.
Embodiment
Specific embodiment of the present utility model is described further below in conjunction with the accompanying drawings.
Fig. 1 is refer to, it illustrates a kind of structure of irregular semi-conducting material breaker disclosed in the utility model
Schematic diagram, the device include：Process chamber 110, high-voltage pulse generator 120 and electrode assemblie 130, it is placed with process chamber 110
The broken container 140 of upward opening, broken container 140 are typically a horizontally disposed peviform or bowl, and it is used to contain
Irregular semi-conducting material 100 to be broken is put, irregular semi-conducting material 100 to be broken fills up broken container 140, crushes
Container 140 is generally made up of polyethylene and its inwall is provided with layer of polyurethane, to be broken in the utility model irregular partly to lead
Body material 100 is usually the polysilicon of irregular shape.Optionally, the device includes at least two broken containers 140, and at least two
Individual broken container 140 is disposed alternately in process chamber 110, and its common implementation is：Broken container A is arranged on process chamber
In, the device crushes to the not regulation semi-conducting material in broken container A, while user can be synchronously to broken container B
Filler is carried out, continues other irregular semi-conducting materials to be broken filling up broken container B, in broken container A not
Regulation semi-conducting material is broken when finishing, and the broken container B that broken container A is removed and completes filler is set in the process chamber
Continue to crush, it is possible to achieve the continuous work of the device.Process fluid 150, broken container are also filled with process chamber 110
140th, the electrode tip in electrode assemblie 130 and irregular semi-conducting material 100 to be broken are submerged in process fluid 150
In, optionally, process fluid 150 is water.
High-voltage pulse generator 120 is electrically connected with electrode assemblie 130, and electrode assemblie 130 is arranged on broken container 140
Side, high-voltage pulse generator 120 are used to send high pressure to irregular semi-conducting material 100 to be broken by electrode assemblie 130
Pulse signal, because substance conductance rate is different, under the bombardment of high-voltage pulse signal, irregular semi-conducting material to be broken
100 can occur internal cleavage along the natural of particle into crystal edge circle, keep complete crystal formation to decompose, so as to realize to irregular half
Conductor material 100 crushes.
Optionally, the fore-and-aft distance between the bottom of electrode assemblie 130 and the upper edge of broken container 140 is 10mm-
20mm, because semi-conducting material 100 to be broken in the utility model is irregular shape, its when filling up broken container 140,
Generally having the irregular upper edge for being raised above broken container 140, (such as Fig. 1 shows that irregular semi-conducting material 100 is deposited
It is being raised above the situation of the upper edge of broken container 140), therefore the bottom of electrode assemblie 130 and the top of broken container 140
The minimum fore-and-aft distance on edge is 10mm, avoids electrode assemblie 130 from being contacted with irregular semi-conducting material, in addition, working as electrode assemblie
130 with irregular semi-conducting material 100 away from it is too far away when can influence crushing effect, therefore, the bottom of electrode assemblie 130 with it is broken
The maximum fore-and-aft distance of the upper edge of broken container 140 is 20mm.
When actually realizing, process chamber 110 and broken container 140 are usually rectangular shape, shown in Fig. 1 for the device
Cross section structure, then electrode assemblie 130 be arranged above the side of broken container 140, and according to predetermined speed to broken container
140 another side movement, predetermined speed is that systemic presupposition value or User Defined value, the utility model are not limited this,
Can also be that process chamber 110 moves when actually realizing, the utility model is not limited this.Meanwhile electrode assemblie 130 is in movement
During, high-voltage pulse signal is sent to irregular semi-conducting material 100 at predetermined time intervals, the scheduled time is systemic presupposition value
Or User Defined value.Optionally, high-voltage pulse generator 120 generates 100kV-300kV voltage, passes through in very short time
High-voltage pulse signal is transmitted on irregular semi-conducting material 100 by electrode assemblie 130, and the frequency per pulse is 0.5Hz-
40Hz, the power per pulse is 300J-1000J.
The cross-sectional view of electrode assemblie as shown in Figure 2, as shown in Fig. 2 electrode assemblie 130 includes central electrode
131st, two side joint earth polars 132, central electrode be first 133, ground electrode tip 134 and support insulator 135, support insulator 135
Usually cylinder made of insulating materials, the utility model are not limited insulating materials used in support insulator.In
Heart electrode 131 is arranged on inside support insulator 135, and two side joint earth polars 132 are separately positioned on the outside of support insulator 135
Both sides and with the phase of central electrode 131 insulate.Wherein, central electrode 131 is made of red copper, central electrode first 133 and ground connection electricity
Cartridge 134 is made of copper-tungsten, and the intensity of copper-tungsten, density and hardness are higher, while microstructure is uniform, resistance to height
Warm, resistance to electric arc is burnt, electrical and thermal conductivity performance is superior, therefore very small using the export license of electrode tip made of this material.
One end connection insulating nut 136 of support insulator 135 is simultaneously connected to high-voltage pulse generator 120 by insulating nut 136, in
Heart electrode 131 is electrically connected with high-voltage pulse generator 120, the other end electricity of central electrode 131 close to one end of insulating nut 136
Property connection central electrode first 133, central electrode first 133 sets towards broken container 140 vertically downward, and ground electrode tip 134 hangs down
Directly it is arranged oppositely upwards with central electrode first 133 and discharging gap, the distance of discharging gap between central electrode first 133 is present
It is preset value, the utility model is not limited this, and ground electrode tip 134 is connected to two side joint earth polars by metal tie rods
132, metal tie rods are usually copper connecting rod.Specifically, metal tie rods include a transverse connecting rod 137 and two longitudinal directions
Connecting rod 138, ground electrode tip 134 be arranged on the center of transverse connecting rod 137 and with 137 electrical phase of transverse connecting rod
Even, the both ends of transverse connecting rod 137 connect a longitudinally connected bar 138 respectively, and connecting rod 138 connects a side joint longitudinally in each
Earth polar 132, optionally, connecting rod 138 is connected to metal flange 139 longitudinally in each, and metal flange 139 is arranged on support insulator
It is electrically connected with outside 135 and with two side joint earth polars 132.
The current loop of electrode assemblie in the utility model is：Electric current flows into central electrode, and enters central electrode head,
By discharging gap to ground electrode tip, then by metal tie rods it is back to side joint earth polar from both sides.In the utility model
The current loop of electrode assemblie is a kind of noninductive current loop, and two electric currents be present and surround loop, and two electric currents surround
The current field in loop is cancelled out each other inside total rectangular-shaped loops, so distributed inductance is relatively low, and in electrode loop structure
In, it can be seen from formula U* Δ T=Δs I*L, under equal discharging condition, the size for the inductance that discharges and the size of discharge current
It is inversely proportional, electric discharge inductance is twice, and for discharge current with regard to small one times, discharge power is also just small one times, therefore in the utility model
The design of the electrode assemblie of low distributed inductance, the discharging efficiency of electrode assemblie can be significantly improved, realize more preferable crushing effect.
Above-described is only preferred embodiment of the present utility model, and the utility model is not limited to above example.Can
To understand, what those skilled in the art directly exported or associated on the premise of spirit of the present utility model and design is not departed from
Oher improvements and changes, it is considered as being included within the scope of protection of the utility model.
Claims (5)
1. a kind of irregular semi-conducting material breaker, it is characterised in that described device includes：Process chamber, high-voltage pulse hair
Device and electrode assemblie are given birth to, the broken container of upward opening is placed with the process chamber, the broken container is used to hold to treat brokenly
Broken irregular semi-conducting material, the high-voltage pulse generator are electrically connected with the electrode assemblie, and the electrode assemblie is set
Above the broken container, the high-voltage pulse generator is used to irregularly partly lead to be broken by the electrode assemblie
Body material sends high-voltage pulse signal；Process fluid is filled with the process chamber, in the broken container, the electrode assemblie
Electrode tip and irregular semi-conducting material to be broken be submerged in the process fluid；
The electrode assemblie includes central electrode, two side joint earth polars, central electrode head, ground electrode tip and support insulator,
The central electrode is arranged on inside the support insulator, and described two side joint earth polars are separately positioned on the support insulator
Both sides external and mutually insulated with the central electrode, one end of the central electrode is electrically connected with the high-voltage pulse and occurred
Device, the other end are electrically connected with the central electrode head, and the central electrode head is set towards the broken container vertically downward, institute
State ground electrode tip and the central electrode head is arranged oppositely and discharging gap be present between the central electrode head, it is described to connect
Ground electrode head is connected to described two side joint earth polars by metal tie rods.
2. device according to claim 1, it is characterised in that irregular semi-conducting material to be broken fills up described broken
Fore-and-aft distance between the upper edge of container, the bottom of the electrode assemblie and the broken container is 10mm-20mm.
3. device according to claim 1, it is characterised in that the central electrode is made of red copper, the middle electrocardio
Cartridge and the ground electrode tip are made of copper-tungsten.
4. device according to claim 1, it is characterised in that described device includes at least two broken containers, it is described extremely
Few two broken containers are disposed alternately in the process chamber.
5. device according to any one of claims 1 to 4, it is characterised in that the metal tie rods connect including a transverse direction
Extension bar and two longitudinally connected bars, then the ground electrode tip be connected to described two side joint earth polars by metal tie rods, wrap
Include：The ground electrode tip is arranged on the center of the transverse connecting rod and is electrical connected with the transverse connecting rod, institute
The both ends for stating transverse connecting rod connect a longitudinally connected bar respectively, and each longitudinally connected bar connects a side
Earthing pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720590359.8U CN206731273U (en) | 2017-05-24 | 2017-05-24 | A kind of irregular semi-conducting material breaker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720590359.8U CN206731273U (en) | 2017-05-24 | 2017-05-24 | A kind of irregular semi-conducting material breaker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206731273U true CN206731273U (en) | 2017-12-12 |
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ID=60568206
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720590359.8U Expired - Fee Related CN206731273U (en) | 2017-05-24 | 2017-05-24 | A kind of irregular semi-conducting material breaker |
Country Status (1)
| Country | Link |
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| CN (1) | CN206731273U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107008553A (en) * | 2017-05-24 | 2017-08-04 | 无锡市华庄电光源机械设备厂 | A kind of irregular semi-conducting material breaker |
| CN112334232A (en) * | 2018-07-04 | 2021-02-05 | 三菱综合材料株式会社 | Method for breaking or cracking semiconductor material and method for producing semiconductor material block |
-
2017
- 2017-05-24 CN CN201720590359.8U patent/CN206731273U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107008553A (en) * | 2017-05-24 | 2017-08-04 | 无锡市华庄电光源机械设备厂 | A kind of irregular semi-conducting material breaker |
| CN107008553B (en) * | 2017-05-24 | 2023-08-15 | 无锡市华庄电光源机械设备厂 | Irregular semiconductor material breaker |
| CN112334232A (en) * | 2018-07-04 | 2021-02-05 | 三菱综合材料株式会社 | Method for breaking or cracking semiconductor material and method for producing semiconductor material block |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180718 Address after: 214000 phase five, No. C10, Shuo Nan Industrial Concentration Area, new Wu District, Wuxi, Jiangsu (No. 11, Xiang Nan Road) Patentee after: Wuxi Xin Hong innovation energy technology Co., Ltd. Address before: 214121 Wuxi City, Jiangsu Province, Hua Zhuang Tong Bridge Patentee before: Wuxi City Hua electric light source machinery equipment factory |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171212 Termination date: 20210524 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |