CN206671596U - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
- Publication number
- CN206671596U CN206671596U CN201720417699.0U CN201720417699U CN206671596U CN 206671596 U CN206671596 U CN 206671596U CN 201720417699 U CN201720417699 U CN 201720417699U CN 206671596 U CN206671596 U CN 206671596U
- Authority
- CN
- China
- Prior art keywords
- light
- emitting device
- reflection grain
- reflection
- grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/12—Reflex reflectors
Abstract
The utility model discloses basic unit, reflecting layer and the luminescent layer that a kind of light-emitting device includes being cascading, wherein the thickness in reflecting layer is 0.02 0.05mm, and the reflecting layer includes the first reflection grain of submicron order, is filled in nano level second reflection grain in the first reflection grain gap and the bonding agent for being bonded first reflection grain and second reflection grain.So that the internal voids in reflecting layer are reduced, thickness is thinned, and heat transfer improves, and so as to increase the brightness of light-emitting device, has good Consumer's Experience.
Description
Technical field
Optical field is the utility model is related to, more particularly, to the light-emitting device under a kind of laser display technology.
Background technology
With the development in epoch, requirement more and more higher of the people to luminosity, product laser power is increasing, and then
So that the temperature more and more higher of light-emitting device.Light-emitting device of the prior art be all by including reflecting layer and luminescent layer, wherein
Reflecting layer is made up of white particles such as scattering particles aluminum oxide, titanium oxide, and in order to improve reflection efficiency general thickness all
In 60-70um or so, formed by glass sintering.As described in Figure 1, between still having much among after aluminum oxide 12 and titanium oxide 11 sinter
Gap, to improve luminosity, it is necessary to increase laser power, but laser power improves the caloric value that will certainly cause light-emitting device
Increase, and because intermediate gaps are more, the transmission of heat can be influenceed.
Therefore, it is necessary to provide a kind of new light-emitting device in fact to solve the above problems.
Utility model content
The utility model is mainly solving the technical problems that provide a kind of light-emitting device, to solve the reflecting layer of existing product
Thickness is big, and space is more, the problem of influenceing heat transfer.
In order to solve the above technical problems, the technical scheme that the utility model uses is：There is provided includes stacking gradually setting
Basic unit, reflecting layer and the luminescent layer put, the thickness in the reflecting layer is 0.02-0.05mm, and the reflecting layer includes submicron order
The first reflection grain, be filled in nano level second reflection grain in the first reflection grain gap and for being bonded the
The bonding agent of one reflection grain and the second reflection grain.
Preferably, the particle size range of first reflection grain is 0.1um-1um, the refractive index of first reflection grain
More than 2.0.
Preferably, first reflection grain is any one in titan oxide particles, yttria particles and zirconia particles
Kind is a variety of.
Preferably, second reflection grain is alumina particle and/or barium sulfate particle.
Preferably, the particle size range of second reflection grain is 0.1nm -100nm.
Preferably, the mass ratio x of first reflection grain, the second reflection grain and binding agent：y：1 meets following bar
Part：
0.2 ＜ x ＜ 1.8
0.2 ＜ y ＜ 1.8
0.4 ＜ x+y ＜ 2.
Preferably, the binding agent is any one in glass dust, epoxy resin or silica gel.
Preferably, the luminescent layer includes material for transformation of wave length, and the material for transformation of wave length is fluorescent material, quantum dot, glimmering
At least one of photoinitiator dye.
Preferably, the basic unit is ceramic substrate or metal substrate.
Preferably, the ceramic substrate is any one in aluminium nitride ceramics, aluminium oxide ceramics or alumina single crystal.
The beneficial effects of the utility model are：The situation of prior art is different from, the utility model provides a kind of luminous dress
Put, including basic unit, reflecting layer and the luminescent layer being cascading, wherein reflecting layer include the first reflection grain of submicron order
With nano level second reflection grain for being filled in the first reflection grain gap so that compare reflecting layer of the prior art
Thickness is decreased to 0.02-0.05mm, and internal voids are reduced, and thermal resistance reduces, and heat transfer improves, and product heat endurance improves, energy
The higher exciting light of power is enough born, so as to increase the brightness of light-emitting device, there is good Consumer's Experience.
Brief description of the drawings
Fig. 1 is the structural representation in the reflecting layer of light-emitting device in the prior art；
Fig. 2 is the structural representation of the utility model light-emitting device；
Fig. 3 is the structural representation in the reflecting layer of the utility model light-emitting device.
Embodiment
It should be appreciated that specific embodiment described herein is not used to limit this only to explain the utility model
Utility model.
Embodiment one
Shown in reference picture 2, light-emitting device provided by the utility model include be cascading from bottom to top basic unit S3,
Reflecting layer S2 and luminescent layer S1.
Material for transformation of wave length is included in luminescent layer S1, for receive exciting light that extraneous excitation source sends and be converted into by
Laser, form luminous and heating center.Material for transformation of wave length includes but is not limited to fluorescent material, quantum dot, fluorescent dye, as long as
It is the material with wavelength conversion capability.In order to improve the luminous brightness of electro-heat equipment, it is necessary to using larger laser power
Exciting light, now, luminescent layer S1 can produce amount of heat.
Reflecting layer S2 is the diffusing reflection layer that forms of scattering particles by white, for reflected excitation light and stimulated light, and energy
Enough play a part of conducting heat caused by luminescent layer.
Reflecting layer S2 includes the first reflection grain 21 and the second reflection grain 22 for each serving as reflex, and is used for
It is bonded the bonding agent of the first reflection grain 21 and the second reflection grain 22.First reflection grain, the second reflection grain and binding agent
Mass ratio x：y：1 meets following condition：
0.2 ＜ x ＜ 1.8
0.2 ＜ y ＜ 1.8
0.4 ＜ x+y ＜ 2.
Inventor draws by experiment：When meeting above-mentioned condition, reflecting layer S2 reflecting properties and mechanical performance are higher.By
Be respectively used to reflect the light of different frequency in the first reflection grain 21 and the second reflection grain 22, thus can according to the wavelength of light or
Frequency selects different the first reflection grain and the second reflection grain.
Because reflecting layer S2 effect is not only reflected excitation light and stimulated light, it is also necessary to by heat caused by luminescent layer S1
Conduction ensures the heat endurance of whole light-emitting device to basic unit S3.Therefore the thickness in reflecting layer is as far as possible thin, is reduced with this
Reflecting layer S1 thermal resistance, improve thermal conductivity.The particle diameter of first reflection grain 21 selects submicron order, the preferred 0.1um- of particle size range
1um；The particle diameter of second reflection grain 22 selects nanoscale, and particle size range preferably uses 0.1nm -100nm；Second reflection grain 22 is filled out
The gap filled between the first reflection grain 21, the thickness in reflecting layer is reduced on the premise of reflecting effect is met, and due to first
Gap between reflection grain 21 is filled, and reduce further thermal resistance, and whole reflecting layer S2 thermal conductivity is improved.Need
It is to be noted that reflecting layer is excessively thin, reflecting effect is bad；Reflecting layer is blocked up, and thermal conductivity is bad.Inventor passes through experimental verification, when anti-
When to penetrate thickness degree be 0.02-0.05mm, the structure can take into account reflecting effect and heat-conducting effect.
Further, the first reflection grain 21 ensures thick in reflecting layer S2 mainly for ensureing reflecting layer S2 reflecting effect
Spend the reflecting effect than remaining to keep reflecting layer S2 in the case of relatively thin.Therefore, the first reflection grain 21 preferred high index of refraction
Particle, i.e. refractive index are more than 2.0 particle.Such as titanium oxide（TiO2）Particle, zinc oxide（ZnO）Particle, yittrium oxide（Y2O3）
Grain or zirconium oxide（ZrO2）Particle.
The main function of second reflection grain 22 is the hole for filling the first reflection grain 21, reduces thermal resistance, improves thermal conductivity
Rate, while the presence of the second reflection grain 22 also functions to the effect of auxiliary reflection, absorbs the light not reflected by the first reflection grain,
And reflected away.Therefore the second reflection grain mainly uses the less particle of particle diameter.Such as aluminum oxide（Al2O3）Particle or
Barium sulfate（BaSO4）Particle.
Specifically in the present embodiment, the first reflection grain 21 be submicron order titan oxide particles, the second reflection grain
22 be nano level alumina particle.
Nano level alumina particle is filled in the gap of the titan oxide particles of submicron order, and then passes through bonding agent
Bind and sinter the fine and close structure of formation.Specifically in the present embodiment, bonding agent is glass dust, and reflecting layer is burnt by glass
Knot forms.Preferably, the mass ratio of titanium oxide, aluminum oxide and binding agent is 3：3：4.
Basic unit S3 is ceramic substrate, and the ceramic substrate can be aluminium nitride ceramics, aluminium oxide ceramics or alumina single crystal.
Specifically in the present embodiment, it is aluminium nitride ceramics, because aluminium nitride ceramics thermal conductivity is higher and cost is low, is easy to the heat of product
Amount is transmitted, there is provided properties of product.
Because nano level second reflection grain 22 is filled in the particulate interspaces of the first reflection grain 21 of submicron order,
So that the structure in reflecting layer is finer and close, in the case of same isoreflectance, it can make it that the thickness in reflecting layer is smaller, therefore heat conduction
Rate is higher, is easy to the diverging of heat.
Embodiment two
Present embodiment is roughly the same with a kind of upper embodiment, and light-emitting device includes what is be cascading from bottom to top
Basic unit S3, reflecting layer S2 and luminescent layer S1.
Material for transformation of wave length is included in luminescent layer S1, for receive exciting light that extraneous excitation source sends and be converted into by
Laser, form luminous and heating center.In order to improve the luminous brightness of electro-heat equipment, it is necessary to swashing using larger laser power
Luminous, now, luminescent layer S1 can produce amount of heat.
Reflecting layer S2 is the diffusing reflection layer that forms of scattering particles by white, for reflected excitation light and stimulated light, and energy
Enough play a part of conducting heat caused by luminescent layer.Its structure is identical with the first embodiment.
It is with a kind of upper difference of embodiment, in present embodiment, basic unit S3 is metal substrate.It is corresponding, at this
In embodiment, bonding agent is silica gel or epoxy resin.Bonding agent is used as by silica gel or epoxy resin, can be better achieved
Reflecting layer S2 and basic unit S3 fixation.And metal substrate compares the first embodiment has more preferable thermal conductivity, luminescent layer S1
Heat be delivered to metal substrate through reflecting layer S2, then radiated via metal substrate.
The beneficial effects of the utility model are：The situation of prior art is different from, the utility model provides a kind of luminous dress
Put, including basic unit, reflecting layer and the luminescent layer being cascading, wherein reflecting layer include the reflection grain of submicron order first and
It is filled in nano level second reflection grain in the first reflection grain gap so that compare reflector thickness of the prior art and subtract
As low as 0.02-0.05mm, internal voids are reduced, and thermal resistance reduces, and heat transfer improves, and product heat endurance improves, and can bear
The higher exciting light of power, so as to increase the brightness of light-emitting device, there is good Consumer's Experience.
Embodiment of the present utility model is the foregoing is only, not thereby limits the scope of the claims of the present utility model, it is every
The equivalent structure or equivalent flow conversion made using the utility model specification and accompanying drawing content, or be directly or indirectly used in
Other related technical areas, similarly it is included in scope of patent protection of the present utility model.
Claims (10)
1. a kind of light-emitting device, including basic unit, reflecting layer and the luminescent layer being cascading, it is characterised in that the reflection
The thickness of layer is 0.02-0.05mm, and the reflecting layer includes the first reflection grain of submicron order, is filled in first reflection
Nano level second reflection grain of particulate interspaces and for being bonded first reflection grain and second reflection grain
Bonding agent.
2. light-emitting device according to claim 1, it is characterised in that the particle size range of first reflection grain is
0.1um-1um, the refractive index of first reflection grain are more than 2.0.
3. light-emitting device according to claim 1 or 2, it is characterised in that first reflection grain be titan oxide particles,
Any one or more in Zinc oxide particles, yttria particles and zirconia particles.
4. light-emitting device according to claim 3, it is characterised in that second reflection grain be alumina particle and/
Or barium sulfate particle.
5. light-emitting device according to claim 4, it is characterised in that the particle size range of second reflection grain is
0.1nm -100nm。
6. light-emitting device according to claim 1, it is characterised in that first reflection grain, the second reflection grain with
The mass ratio x of binding agent：y：1 meets following condition：
0.2 ＜ x ＜ 1.8
0.2 ＜ y ＜ 1.8
0.4 ＜ x+y ＜ 2.
7. light-emitting device according to claim 6, it is characterised in that the binding agent is glass dust, epoxy resin or silicon
Any one in glue.
8. light-emitting device according to claim 1, it is characterised in that the luminescent layer includes material for transformation of wave length, described
Material for transformation of wave length is at least one of fluorescent material, quantum dot, fluorescent dye.
9. light-emitting device according to claim 1, it is characterised in that the basic unit is ceramic substrate or metal substrate.
10. light-emitting device according to claim 9, it is characterised in that the ceramic substrate is aluminium nitride ceramics, aluminum oxide
Ceramics or alumina single crystal in any one.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720417699.0U CN206671596U (en) | 2017-04-20 | 2017-04-20 | Light-emitting device |
| PCT/CN2018/074747 WO2018192290A1 (en) | 2017-04-20 | 2018-01-31 | Light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720417699.0U CN206671596U (en) | 2017-04-20 | 2017-04-20 | Light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206671596U true CN206671596U (en) | 2017-11-24 |
Family
ID=60372161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720417699.0U Active CN206671596U (en) | 2017-04-20 | 2017-04-20 | Light-emitting device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN206671596U (en) |
| WO (1) | WO2018192290A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018192290A1 (en) * | 2017-04-20 | 2018-10-25 | 深圳市光峰光电技术有限公司 | Light-emitting device |
| WO2019174226A1 (en) * | 2018-03-12 | 2019-09-19 | 深圳光峰科技股份有限公司 | Wavelength conversion device and preparation method therefor |
| CN110346859A (en) * | 2018-04-08 | 2019-10-18 | 京东方科技集团股份有限公司 | Optical resonator, display panel |
| WO2020057297A1 (en) * | 2018-09-20 | 2020-03-26 | 深圳光峰科技股份有限公司 | Diffuse reflection device and preparation method thereof, and wavelength conversion device |
| CN113719805A (en) * | 2021-09-03 | 2021-11-30 | 厦门市米宫科技有限公司 | Quantum dot reflective material and preparation method and application thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006077662A1 (en) * | 2005-01-19 | 2006-07-27 | Diatex Co., Ltd. | Retroreflective adhesive sheet |
| TWI382206B (en) * | 2008-09-09 | 2013-01-11 | Coretronic Corp | Reflective film |
| CN104595852B (en) * | 2013-10-30 | 2016-08-24 | 深圳市绎立锐光科技开发有限公司 | A kind of Wavelength converter, diffusing reflection layer, light-source system and optical projection system |
| CN105322433B (en) * | 2014-05-28 | 2020-02-04 | 深圳光峰科技股份有限公司 | Wavelength conversion device and related light emitting device |
| CN206671596U (en) * | 2017-04-20 | 2017-11-24 | 深圳市光峰光电技术有限公司 | Light-emitting device |
-
2017
- 2017-04-20 CN CN201720417699.0U patent/CN206671596U/en active Active
-
2018
- 2018-01-31 WO PCT/CN2018/074747 patent/WO2018192290A1/en active Application Filing
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018192290A1 (en) * | 2017-04-20 | 2018-10-25 | 深圳市光峰光电技术有限公司 | Light-emitting device |
| WO2019174226A1 (en) * | 2018-03-12 | 2019-09-19 | 深圳光峰科技股份有限公司 | Wavelength conversion device and preparation method therefor |
| CN110261942A (en) * | 2018-03-12 | 2019-09-20 | 深圳光峰科技股份有限公司 | Wavelength converter and preparation method thereof |
| CN110346859A (en) * | 2018-04-08 | 2019-10-18 | 京东方科技集团股份有限公司 | Optical resonator, display panel |
| CN110346859B (en) * | 2018-04-08 | 2023-05-16 | 京东方科技集团股份有限公司 | Optical resonant cavity and display panel |
| WO2020057297A1 (en) * | 2018-09-20 | 2020-03-26 | 深圳光峰科技股份有限公司 | Diffuse reflection device and preparation method thereof, and wavelength conversion device |
| CN113719805A (en) * | 2021-09-03 | 2021-11-30 | 厦门市米宫科技有限公司 | Quantum dot reflective material and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018192290A1 (en) | 2018-10-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206671596U (en) | Light-emitting device | |
| CN105278225B (en) | Wavelength converter and preparation method thereof, related lighting fixtures and projection arrangement | |
| CN106206904B (en) | A kind of Wavelength converter, fluorescence colour wheel and light emitting device | |
| JP6597657B2 (en) | Light emitting device | |
| US8647906B2 (en) | Method for manufacturing a light emitting device | |
| JP6327220B2 (en) | Light emitting device | |
| CN100502065C (en) | High-efficiency fluorescent converted LED light source and backlight module | |
| JP5542134B2 (en) | Optical element for light emitting device and method of manufacturing optical element | |
| US9627362B2 (en) | Illumination device | |
| CN105737103B (en) | Wavelength converter and fluorescence associated colour wheel and projection arrangement | |
| CN105738994B (en) | Wavelength converter and related lighting device, fluorescence colour wheel and projection arrangement | |
| US11715818B2 (en) | Wavelength-converting element, projection apparatus, and manufacturing method of wavelength-converting element | |
| JP2013207049A (en) | Light emitting device using wavelength conversion body | |
| TWI823976B (en) | Wavelength conversion elements, methods of making the same, light conversion devices, and methods for generating white light | |
| CN106195925A (en) | A kind of Wavelength converter, light-emitting device and projection arrangement | |
| TWI720969B (en) | Light emitting device | |
| CN107424524A (en) | A kind of miniature LED display panel | |
| CN101567366A (en) | Light emitting diode | |
| JP2017199933A (en) | Light-emitting device, manufacturing method of coating member, and manufacturing method of light-emitting device | |
| CN108105604A (en) | Luminescent ceramic structure and preparation method thereof, related lighting fixtures and projection arrangement | |
| CN205720746U (en) | A kind of reflection unit and relevant wavelength conversion equipment, colour wheel and light-source system | |
| JP2018198284A (en) | Light-emitting device | |
| CN101207173B (en) | Light emitting diode with one-dimensional photon crystal | |
| CN107689554B (en) | Wavelength conversion device, preparation method thereof, light-emitting device and projection device | |
| CN110050223A (en) | Light-switching device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee after: APPOTRONICS Corp.,Ltd. Address before: 518000 Guangdong province Shenzhen Nanshan District Xili town Cha Guang road Shenzhen integrated circuit design application Industrial Park 401 Patentee before: APPOTRONICS Corp.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 518000 20-22, 20-22 headquarters building, 63 high tech Zone, Xuefu Road, Nanshan District, Guangdong Province, Guangdong. Patentee after: APPOTRONICS Corp.,Ltd. Address before: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor. Patentee before: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address after: 518000 Nanshan District, Shenzhen, Guangdong, Guangdong Province, Guangdong Road, 63 Xuefu Road, high-tech zone, 21 headquarters building, 22 floor. Patentee after: SHENZHEN GUANGFENG TECHNOLOGY Co.,Ltd. Address before: 518000 Guangdong province Shenzhen Nanshan District Xili town Cha Guang road Shenzhen integrated circuit design application Industrial Park 401 Patentee before: APPOTRONICS Corp.,Ltd. |