CN206639923U - Slot antenna in one kind fluting - Google Patents

Slot antenna in one kind fluting Download PDF

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Publication number
CN206639923U
CN206639923U CN201720400376.0U CN201720400376U CN206639923U CN 206639923 U CN206639923 U CN 206639923U CN 201720400376 U CN201720400376 U CN 201720400376U CN 206639923 U CN206639923 U CN 206639923U
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China
Prior art keywords
micro
strip
microstrip
antenna
fed microstrip
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Expired - Fee Related
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CN201720400376.0U
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Chinese (zh)
Inventor
曾祥好
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Shenzhen Yusheng Communication Equipment Co Ltd
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Shenzhen Yusheng Communication Equipment Co Ltd
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Priority to CN201720400376.0U priority Critical patent/CN206639923U/en
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Abstract

It the utility model is related to slot antenna in a kind of fluting, mainly solve that impedance matching present in prior art is poor, technical problem of narrow bandwidth, the utility model includes upper substrate, middle substrate and infrabasal plate by using the antenna, the upper substrate upper surface is parasitic patch, the middle upper surface of base plate is radiation patch, lower surface is metal ground plane, and the infrabasal plate lower surface is provided with fed microstrip;The parasitic patch is 4 E type parasitic patch, and 4 E type parasitic patch is symmetrical arranged and vertically partially overlapped to radiation patch;The metal ground plane is provided with H types gap in the closely inner relevant position of fed microstrip, and 3 pbg structure gaps are provided with the nearly outer end relevant position of fed microstrip;The fed microstrip is connected with communication terminal radio-frequency head;The parasitic patch, radiation patch, fed microstrip and ground plane metal thickness are 0.018mm technical scheme, preferably resolve the problem, available in the industrial production of antenna.

Description

Slot antenna in one kind fluting
Technical field
Field of antenna is the utility model is related to, is related specifically to slot antenna in a kind of fluting.
Background technology
Antenna is the element in any radio system, with the continuous development of radio communication, communication equipment Integrated level more and more higher so that its volume is less and less, and this just eliminates higher requirement to the miniaturization of antenna, use LTCC technology further reduces antenna volume to meet the requirement of system compact.LTCC with its high temperature tolerance, high thermoconductivity, Low dielectric loss, excellent high-frequency and high-Q characteristic adapt to as miniature antenna material very much.Microstrip antenna is the day of standing wave form Line, its shortcoming are that impedance bandwidth is very narrow, and relative bandwidth typically only has 2%-5%, and microstrip antenna receives one in usual use Determine the limitation of degree.
The way of existing wideband microstrip antenna is usually to reduce the quality factor q of microstrip antenna equivalent resonant circuit Value, corresponding method are typically to increase substrate thickness and reduce the dielectric constant of dielectric substrate or use parasitic patch resonance Method.Under the mentality of designing of antenna miniaturization, there is penalty in existing way, impedance matching effect is poor, bandwidth is inadequate Wide technical problem.Therefore it provides a kind of impedance matching is good, in the broader fluting of bandwidth slot antenna with regard to necessary.
Utility model content
Technical problem to be solved in the utility model is that the high technology of narrow bandwidth present in prior art, standing wave is asked Topic.Slot antenna in a kind of new fluting is provided, slot antenna has the characteristics of wide bandwidth, low standing wave in the fluting.
In order to solve the above technical problems, the technical scheme used is as follows:Slot antenna in one kind fluting, it is characterised in that: The antenna includes upper substrate, middle substrate and infrabasal plate, and the upper substrate upper surface is parasitic patch, the middle upper surface of base plate For radiation patch, lower surface is metal ground plane, and the infrabasal plate lower surface is provided with fed microstrip;The parasitic patch is 4 E Type parasitic patch, 4 E type parasitic patch are symmetrical arranged and vertically partially overlapped to radiation patch;The metal connects Ground is provided with H types gap in the closely inner relevant position of fed microstrip, and being provided with 3 PBG in the nearly outer end relevant position of fed microstrip ties Structure gap;The fed microstrip is connected with communication terminal radio-frequency head;The parasitic patch, radiation patch, fed microstrip and ground connection Face metal thickness is 0.018mm.
In above-mentioned technical proposal, for optimization, further, the fed microstrip also includes impedance matching unit, the resistance Anti- matching unit is symmetrical combed filter device structure matching unit.
Further, the combed filter device structure matching unit include be arranged in parallel the first micro-strip, the second micro-strip and 3rd micro-strip, is provided with the first gap that width is g01 between first micro-strip and the second micro-strip, second micro-strip and the 3rd micro- Interband is provided with the second gap that width is g12;The Microstrip Length of first micro-strip first is Lf, width Wf, the second micro-strip and The size of 3rd Microstrip Length is identical, and length is that L1 width is W1;Wherein, Wf<W1, Lf<L1.
Further, the fed microstrip and the gradual change micro-strip that communication terminal radio-frequency head junction is 50 ohm of output impedance Line.
Further, the upper substrate, middle substrate and infrabasal plate are Feero A6-M sheet materials, dielectric constant 5.7, are lost Angle is just cut to 0.02.
Further, the upper substrate thickness be 0.282mm, middle substrate thickness be 0.282mm, infrabasal plate thickness 0.188mm。
Further, it is bonded respectively by nonconducting glue between the upper substrate, middle substrate and infrabasal plate.
Further, the fed microstrip is connected by sheet thimble with communication terminal radio-frequency head.
The mode of the utility model collection slot-coupled is fed to antenna, and aerial radiation paster is added parasitic single Member, it is E type parasitic patch units in the fluting of parasitic element three, adds the current flow path of parasitic patch unit three, reduce Antenna resonant frequency, so as to realizing antenna miniaturization.Pass through formulaDraw, the current path L on paster has Effect length can decline the resonant frequency of antenna, and the antenna reduction size for fixed frequency can reach the purpose of miniaturization. The utility model opens that two width are equal in traditional rectangular parasitic patch but gap that length does not wait, to guide in paster Current direction is bent, and the effect of increase current equivalence length is reached in the case where not changing antenna size., wherein BW is bandwidth, and S is the maximum voltage standing-wave ratio allowed, and Q is quality factor.Therefore, too opened on piece Groove causes the reduction of antenna Q values, being capable of spread bandwidth.The utility model practicality H types gap, the bore position in H types gap on The Central Symmetry distribution of radiation patch and vertical with microstrip line, due to this symmetrical activation profile, make it that antenna has very low Intersect plan.H types clearance channel isolates radiation patch and feeding network, reduces the parasitic radiation that feed strip is come.By adjusting H types The size in gap and the length of terminal microstrip line can improve impedance matching property.Pass through the close patch edges position on ground plane Pbg structure gap is put out, the efficiency of harmonic wave can be suppressed, PBG gaps are with the Central Symmetry of feeding microstrip line.By 3 sizes not Same PBG units are combined, and can obtain Wide stop bands low-pass characteristic.
Paster antenna can be equivalent to a RLC resonant tank near resonant frequency.This load is can be by broadband Matching.Feeding microstrip line realizes impedance inverter using 1/4th wavelength shifters in the utility model, and the utility model is adopted It is used as matching unit with the parallel coupled line of similar comb line filter shape, the gap between parallel coupled line is as impedance Inversor.
The beneficial effects of the utility model:
Effect one, spreading antenna bandwidth;
Effect two, complete antenna miniaturization design;
Effect three, improves impedance matching property.
Brief description of the drawings
The utility model is further illustrated with reference to the accompanying drawings and examples:
Fig. 1, antenna schematic top plan view;
Fig. 2, antenna parasitic patch cell schematics;
Fig. 3, aerial radiation paster schematic diagram;
Fig. 4, antenna ground plane schematic diagram;
Fig. 5, antenna vertical section schematic diagram;
Fig. 6, the feeding microstrip line schematic diagram in embodiment 2;
Fig. 7, antenna pattern test result schematic diagram in embodiment 1;
Fig. 8, S11 test schematic diagrams in embodiment 1;
Fig. 9, S11 test schematic diagrams in embodiment 2.
In accompanying drawing:1-E type parasitic patch, 2- radiation patch, 3- ground planes, 4- fed microstrips, 5-H types gap, 6- first Pbg structure gap, the second pbg structures of 7- gap, the pbg structure gaps of 8- the 3rd, the micro-strips of 9- first, the micro-strips of 10- second, 11- Three micro-strips, 12- upper substrates, substrate in 13-, 14- infrabasal plates, 15- supporting plates.
Embodiment
In order that the purpose of this utility model, technical scheme and advantage are more clearly understood, with reference to embodiments, to this Utility model is further elaborated.It should be appreciated that specific embodiment described herein is only explaining this practicality It is new, it is not used to limit the utility model.
Embodiment 1:Such as Fig. 1, the present embodiment provides slot antenna in a kind of fluting, and the antenna includes upper substrate, middle base Plate and infrabasal plate, the upper substrate upper surface are parasitic patch, and the middle upper surface of base plate is radiation patch, and lower surface is metal Ground plane, the infrabasal plate lower surface are provided with fed microstrip;Such as Fig. 2, the parasitic patch is 4 E type parasitic patch, described 4 Individual E types parasitic patch is symmetrical arranged and vertically partially overlapped to radiation patch;Such as Fig. 4, the metal ground plane is in feed The closely inner relevant position of micro-strip is provided with H types gap, and 3 pbg structure gaps are provided with the nearly outer end relevant position of fed microstrip;It is described Fed microstrip is connected with communication terminal radio-frequency head;The parasitic patch, radiation patch, fed microstrip and ground plane metal thickness are equal For 0.018mm.Radiation patch such as Fig. 3.Ground plane such as Fig. 4.Antenna vertical section such as Fig. 5.
Preferably, fed microstrip and the gradual change microstrip line that communication terminal radio-frequency head junction is 50 ohm of output impedance.
In the present embodiment, upper substrate, middle substrate and infrabasal plate are Feero A6-M sheet materials, dielectric constant 5.7, loss angle Just it is cut to 0.02.Upper substrate thickness is 0.282mm, middle substrate thickness is 0.282mm, infrabasal plate thickness 0.188mm, it is described it is upper, Length=width=10mm of lower and middle substrate.Radiation patch is the square paster that the length of side is 1.56mm.E type parasitic patch size is such as Fig. 2, P2l=1.8mm, P2w=1.4mm, Xw=0.5mm, Xl2=1.1mm, Xl1=0.7mm.H types gap is middle gap length For 0.6mm, a width of 0.2mm, the symmetrical gap in both sides a length of 0.8mm, a width of 0.2mm.
In the present embodiment, it is bonded respectively by nonconducting glue between upper substrate, middle substrate and infrabasal plate.This practicality is new Fed microstrip can be positioned below a support layer in type, and sheet thimble can be used to touch or weld for fed microstrip external connection, energy Enough reduce the impedance mismatch that connector is brought.The fed microstrip is connected by sheet thimble with communication terminal radio-frequency head.This Antenna measurement Pattern measurement result such as Fig. 7 in implementation.Wherein solid line is E plane patterns, and dotted line is H plane patterns.My god Line test S11 curve synoptic diagrams such as Fig. 8.
Embodiment 2:The present embodiment setting impedance matching unit at fed microstrip on the basis of embodiment 1, such as Fig. 6, The impedance matching unit is symmetrical combed filter device structure matching unit.Combed filter device structure matching unit includes parallel The first micro-strip, the second micro-strip and the 3rd micro-strip set, width is provided between first micro-strip and the second micro-strip as the first of g01 Gap, the second gap that width is g12 is provided between second micro-strip and the 3rd micro-strip;First Microstrip Length is Lf, width Spend for Wf, the size of the second micro-strip and the 3rd Microstrip Length is identical, and length is that L1 width is W1;Wherein, Wf<W1, Lf<L1.Its Middle Wf=0.1mm, Lf=1.08mm, g01=0.2mm, g12=0.3mm, L1=2.4mm, W1=0.15mm.
S11 curves such as Fig. 9 of antenna measurement, comparative example 1 in the present embodiment, the impedance matching for improving antenna are special Property.
Although the illustrative embodiment of the utility model is described above, in order to the art Technical staff is it will be appreciated that the utility model, but the utility model is not limited only to the scope of embodiment, to this technology For the those of ordinary skill in field, as long as long as the utility model that various change is limited and determined in appended claim In spirit and scope, all are created in the row of protection using the utility model of the utility model design.

Claims (8)

1. slot antenna in one kind fluting, it is characterised in that:The antenna includes upper substrate, middle substrate and infrabasal plate, it is described on Upper surface of base plate is parasitic patch, and the middle upper surface of base plate is radiation patch, and lower surface is metal ground plane, the infrabasal plate Lower surface is provided with fed microstrip;The parasitic patch is 4 E type parasitic patch, and 4 E type parasitic patch is symmetrical arranged simultaneously Vertically partially overlapped to radiation patch;The metal ground plane is provided with H types gap in the closely inner relevant position of fed microstrip, 3 pbg structure gaps are provided with the nearly outer end relevant position of fed microstrip;The fed microstrip is connected with communication terminal radio-frequency head; The parasitic patch, radiation patch, fed microstrip and ground plane metal thickness are 0.018mm.
2. slot antenna in fluting according to claim 1, it is characterised in that:The fed microstrip also includes impedance matching Unit, the impedance matching unit are symmetrical combed filter device structure matching unit.
3. slot antenna in fluting according to claim 2, it is characterised in that:The combed filter device structure matching unit Including the first micro-strip, the second micro-strip and the 3rd micro-strip be arrangeding in parallel, it is provided with width between first micro-strip and the second micro-strip G01 the first gap, the second gap that width is g12 is provided between second micro-strip and the 3rd micro-strip;First micro-strip One Microstrip Length is Lf, width Wf, and the size of the second micro-strip and the 3rd Microstrip Length is identical, and length is that L1 width is W1;
Wherein, Wf<W1, Lf<L1.
4. according to slot antenna in any described flutings of claim 1-3, it is characterised in that:The fed microstrip is with communicating eventually Hold the gradual change microstrip line that radio-frequency head junction is 50 ohm of output impedance.
5. according to slot antenna in any described flutings of claim 1-3, it is characterised in that:The upper substrate, middle substrate and Infrabasal plate is Feero A6-M sheet materials, dielectric constant 5.7, loss angle tangent 0.02.
6. according to slot antenna in any described flutings of claim 1-3, it is characterised in that:The upper substrate thickness is 0.282mm, middle substrate thickness are 0.282mm, infrabasal plate thickness 0.188mm.
7. according to slot antenna in any described flutings of claim 1-3, it is characterised in that:The upper substrate, middle substrate and It is bonded respectively by nonconducting glue between infrabasal plate.
8. according to slot antenna in any described flutings of claim 1-3, it is characterised in that:The fed microstrip passes through sheet Thimble is connected with communication terminal radio-frequency head.
CN201720400376.0U 2017-04-17 2017-04-17 Slot antenna in one kind fluting Expired - Fee Related CN206639923U (en)

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Application Number Priority Date Filing Date Title
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110167245A (en) * 2019-05-24 2019-08-23 南京邮电大学 A kind of plasma density measurement sensor based on LTCC antenna
CN111585027A (en) * 2020-05-13 2020-08-25 广东工业大学 Broadband low-profile filtering antenna based on parasitic patch
CN112243551A (en) * 2018-06-11 2021-01-19 Lg 伊诺特有限公司 Antenna with a shield
CN113206381A (en) * 2021-05-14 2021-08-03 云南大学 Circularly polarized leaky-wave antenna
CN113839182A (en) * 2020-06-24 2021-12-24 大唐移动通信设备有限公司 Antenna and base station
CN114300839A (en) * 2022-01-17 2022-04-08 云南大学 Integrated substrate gap waveguide broadband antenna

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112243551A (en) * 2018-06-11 2021-01-19 Lg 伊诺特有限公司 Antenna with a shield
CN112243551B (en) * 2018-06-11 2024-02-09 Lg 伊诺特有限公司 Antenna
CN110167245A (en) * 2019-05-24 2019-08-23 南京邮电大学 A kind of plasma density measurement sensor based on LTCC antenna
CN110167245B (en) * 2019-05-24 2021-07-20 南京邮电大学 Plasma density measurement sensor based on LTCC antenna
CN111585027A (en) * 2020-05-13 2020-08-25 广东工业大学 Broadband low-profile filtering antenna based on parasitic patch
CN113839182A (en) * 2020-06-24 2021-12-24 大唐移动通信设备有限公司 Antenna and base station
CN113206381A (en) * 2021-05-14 2021-08-03 云南大学 Circularly polarized leaky-wave antenna
CN113206381B (en) * 2021-05-14 2022-04-08 云南大学 Circularly polarized leaky-wave antenna
CN114300839A (en) * 2022-01-17 2022-04-08 云南大学 Integrated substrate gap waveguide broadband antenna
CN114300839B (en) * 2022-01-17 2023-03-14 云南大学 Integrated substrate gap waveguide broadband antenna

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Granted publication date: 20171114

Termination date: 20180417