CN206628490U - A kind of device for infrared acquisition based on black arsenic phosphorus - Google Patents
A kind of device for infrared acquisition based on black arsenic phosphorus Download PDFInfo
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- CN206628490U CN206628490U CN201720153657.0U CN201720153657U CN206628490U CN 206628490 U CN206628490 U CN 206628490U CN 201720153657 U CN201720153657 U CN 201720153657U CN 206628490 U CN206628490 U CN 206628490U
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- arsenic phosphorus
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Abstract
The utility model discloses a kind of device for infrared acquisition based on black arsenic phosphorus, for detecting infrared ray, including dielectric substrate, the first semiconductor, the second semiconductor.First semiconductor and the installation of the second semiconductor are on an insulating substrate.First semiconductor and the second semiconductor are in contact and form hetero-junctions.First semiconductor and the second semiconductor are connected to electrode.First semiconductor is the black arsenic phosphorus two-dimensional layer material that thickness is no more than 50nm.Second semiconductor is the molybdenum sulfide two-dimensional layer material that thickness is no more than 50nm.Compared to existing infrared detector, the utility model has very high specific detecivity.
Description
Technical field
It the utility model is related to application of the black arsenic phosphorus of new material in terms of infrared acquisition.
Background technology
Black phosphorus is the new a kind of two-dimensional layer material found after graphene, Transition-metal dichalcogenide, is a kind of
By with anisotropic phosphorus atoms with SP2The two-dimensional layer material that key is formed.Due to the anisotropy of black phosphorus lattice structure, its
Electrical properties also have a larger anisotropy, and high-voidage mobility and not with the direct band gap of thickness change.Due to its tool
Have uniqueness structure and excellent physical property, black phosphorus and doping after black phosphorus two-dimensional layer material obtained the wide of scientific circles
General concern.《Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors
with Highly Tunable Compositions and Properties（2015）》Research show, after black phosphorus mixes arsenic
The black arsenic phosphorus two-dimensional layer material formed has realizes the adjustable performance of band gap by adjusting component.
The content of the invention
Problem to be solved in the utility model is application of the black arsenic phosphorus two-dimensional layer material in terms of infrared electro detection.
To solve the above problems, the scheme that the utility model uses is as follows：
A kind of device for infrared acquisition based on black arsenic phosphorus, for detecting infrared ray, including dielectric substrate, the first half
Conductor, the second semiconductor；First semiconductor and the second semiconductor are arranged in the dielectric substrate；First semiconductor
It is in contact with the second semiconductor and forms hetero-junctions；First semiconductor and the second semiconductor are connected to electrode；It is described
First semiconductor is black arsenic phosphorus two-dimensional layer material.
Further, first semiconductor is the black arsenic phosphorus two-dimensional layer material that thickness is no more than 50nm.
Further, the arsenic content in the black arsenic phosphorus two-dimensional layer material of first semiconductor is 10% ~ 90%.
Further, the arsenic content in the black arsenic phosphorus two-dimensional layer material of first semiconductor is 83%.
Further, second semiconductor is the molybdenum sulfide two-dimensional layer material that thickness is no more than 50nm.
Further, second semiconductor is black arsenic phosphorus two-dimensional layer material；First semiconductor and the second semiconductor
Black arsenic phosphorus there is different arsenic contents.
Further, second semiconductor is the two-dimensional layer material of Transition-metal dichalcogenide.
Further, second semiconductor is the two-dimensional layer material of graphene or black phosphorus.
Further, the dielectric substrate is silica or alundum (Al2O3) or PMMA or PDMS.
Further, in addition to for being dielectrically separated from the encapsulating structure with air insulated.
Technique effect of the present utility model is as follows：Compared to the infrared detector under prior art, spy of the present utility model
Surveying utensil has very high specific detecivity.
Brief description of the drawings
Fig. 1 is the structural representation of the utility model embodiment.
Fig. 2 be the utility model embodiment have Infrared irradiation and without Infrared irradiation in the case of Current Voltage it is bent
Line.
Fig. 3 is the noise equivalent power test result figure of the utility model embodiment.
Fig. 4 is that the utility model embodiment and the specific detecivity of PbSe nanocrystals piece infrared acquisition contrast.
Embodiment
The utility model is described in further details below in conjunction with the accompanying drawings.
A kind of device for infrared acquisition based on black arsenic phosphorus, as shown in figure 1, including dielectric substrate 1, the first semiconductor
21st, the second semiconductor 22, first electrode 31, second electrode 32 and encapsulating structure.Dielectric substrate 1 is that 300nm silica covers
The silicon chip of lid.First semiconductor 21 is the thin slice of black arsenic phosphorus two-dimensional layer material, is formed by the black arsenic phosphorus cleavage of arsenic content 83%,
Thickness is generally 2 ~ 50nm.First semiconductor 21 is bonded in dielectric substrate 1.Second semiconductor 22 is molybdenum sulfide two-dimensional layer material
Thin slice, by molybdenum sulfide (MoS2) cleavage forms, thickness is generally 2 ~ 20nm.Second semiconductor 22 overlays on the first semiconductor 21
On so that the first semiconductor 21 is in contact with the second semiconductor 22 so that the first semiconductor 21 and the second semiconductor 22 it
Between form hetero-junctions.First electrode 31 and second electrode 32 are by gold（Au）Manufactured strip shape body.First electrode 31 is led with the first half
Body 21 is connected.Second electrode 32 is connected with second electrode 32.Encapsulating structure is used to be dielectrically separated from and air insulated, including for inciting somebody to action
The first isolation part 41 that first electrode 31 is isolated with the second semiconductor 22, for by the phase of 32 and first semiconductor of second electrode 21
Second isolation part 42 of isolation and the transparent spacer layer 43 for the second semiconductor 22 to be isolated with air.The present embodiment
In, the first isolation part 41, the second isolation part 42 and transparent spacer layer 43 form by PMMA spin coatings.
Fig. 2 be the present embodiment have Infrared irradiation and without Infrared irradiation in the case of i-v curve.Wherein, it is horizontal
To coordinate representation voltage, unit is volt；Longitudinal coordinate represents electric current, and unit is ampere；The infrared waves irradiated is a length of
4.03 micron；Imaginary curve is without the i-v curve in the case of Infrared irradiation；In the case of solid-line curve is has an Infrared irradiation
I-v curve.As seen from Figure 2, electric current under Infrared irradiation is significantly greater than without Infrared irradiation situation, thus
Can be according under this Infrared irradiation and the detectable infrared light of the difference without electric current under Infrared irradiation.
Fig. 3 is the noise equivalent power test result figure of the present embodiment.Wherein, curve represents device detection small-signal
The limit；Lateral coordinates table infrared light wavelength, unit is micron；Longitudinal coordinate represents signal intensity, unit pWHz-1/2.By Fig. 3
As can be seen that the present embodiment can detect 0.1pWHz-1/2Small-signal.
Fig. 4 is that the specific detecivity of the present embodiment and PbSe nanocrystals piece infrared acquisition contrasts.Wherein, lateral coordinates represent
Infrared light wavelength, unit are micron；Longitudinal coordinate is specific detecivity, unit Jones；Solid-line curve detects for the ratio of the present embodiment
Rate, imaginary curve are the specific detecivity of lead selenide.As seen from Figure 4, the specific detecivity of the present embodiment is more than 5 × 109 Jones,
Compare lead selenide（PbSe）The high an order of magnitude of specific detecivity.
It is pointed out that it will be appreciated by those skilled in the art that be based on above-described embodiment, above-described embodiment can be done and done
Equivalent substitution or change, these are replaced or changed in the scope of protection of the utility model.
It is to change dielectric substrate that the first, which replaces change,.In the present embodiment, dielectric substrate 1 is the covering of 300nm silica
Silicon chip, its essence is silica.It will be understood by those skilled in the art that dielectric substrate 1 can also be alundum (Al2O3) crystalline substance
Body or other insulating materials, are possibly even flexible materials, such as PMMA, PDMS transparent membrane.
It is to change the material of the second semiconductor that second, which is replaced change,.In the present embodiment, the second semiconductor has selected vulcanization
Molybdenum two-dimensional layer material.It will be understood by those skilled in the art that the second semiconductor can select other two-dimensional layer materials, than
Such as WS2、WSe2、MoSe2Deng Transition-metal dichalcogenide, the two-dimensional layer materials such as graphene, black phosphorus can also be selected, even
The black arsenic phosphorus from the black arsenic phosphorus of the first semiconductor with different arsenic contents can be selected.It is it will be appreciated by those skilled in the art that above-mentioned
Transition-metal dichalcogenide includes transient metal sulfide, transition metal selenides and transition metal antimonide.
It is that the first semiconductor and the second semiconductor are exchanged with each other that the third, which replaces change,.In the present embodiment, the first semiconductor
For black arsenic phosphorus two-dimensional layer material, the second semiconductor has selected molybdenum sulfide two-dimensional layer material.Those skilled in the art can manage
Solution, said structure can make into：Second semiconductor is black arsenic phosphorus two-dimensional layer material, and the first semiconductor selects molybdenum sulfide two-dimensional layer
Shape material.
It is to change the sheet thickness of the first semiconductor and the second semiconductor that 4th kind, which is replaced change,.Do not influenceing electrical resistance
In the case of energy, translucency, it can suitably increase the first semiconductor and the second semiconductor thickness, physics that is total and increasing entirety is strong
Degree.
It is arsenic content in changing black arsenic phosphorus two-dimensional layer material that 5th kind, which is replaced change, in the present embodiment, is used as the first half
The black arsenic phosphorus two-dimensional layer material arsenic content of conductor is 83%, it will be appreciated by those skilled in the art that can suitably be changed according to practical application
Arsenic content in the black arsenic phosphorus two-dimensional layer material of first semiconductor, the arsenic in the black arsenic phosphorus two-dimensional layer material of the first semiconductor
Content can typically select between 10% ~ 90%.
In addition, in the present embodiment, as the black arsenic phosphorus two-dimensional layer material of the first semiconductor thin slice and be used as the second half
The thin slice of the molybdenum sulfide two-dimensional layer material of conductor is made up of cleavage process, it will be appreciated by those skilled in the art that as first
The thin slice of the thin slice of the black arsenic phosphorus two-dimensional layer material of semiconductor and the molybdenum sulfide two-dimensional layer material as the second semiconductor
It can be made up of other thin film growth process, such as, using chemical vapour deposition technique（CVD）Or chemical vapor transport method
（CVT）It is prepared Deng other thin film growth process.
Claims (10)
1. a kind of device for infrared acquisition based on black arsenic phosphorus, for detecting infrared ray, it is characterised in that served as a contrast including insulation
Bottom, the first semiconductor, the second semiconductor；First semiconductor and the second semiconductor are arranged in the dielectric substrate；It is described
First semiconductor and the second semiconductor are in contact and form hetero-junctions；First semiconductor and the second semiconductor are connected to
Electrode；First semiconductor is black arsenic phosphorus two-dimensional layer material.
2. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that described the first half lead
Body is the black arsenic phosphorus two-dimensional layer material that thickness is no more than 50nm.
3. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that described the first half lead
Arsenic content in the black arsenic phosphorus two-dimensional layer material of body is 10% ~ 90%.
4. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that described the first half lead
Arsenic content in the black arsenic phosphorus two-dimensional layer material of body is 83%.
5. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that described the second half lead
Body is the molybdenum sulfide two-dimensional layer material that thickness is no more than 50nm.
6. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that described the second half lead
Body is black arsenic phosphorus two-dimensional layer material；The black arsenic phosphorus of first semiconductor and the second semiconductor has different arsenic contents.
7. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that described the second half lead
Body is the two-dimensional layer material of Transition-metal dichalcogenide.
8. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that described the second half lead
Body is the two-dimensional layer material of graphene or black phosphorus.
9. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that the dielectric substrate
For silica or alundum (Al2O3) or PMMA or PDMS.
10. the device for infrared acquisition as claimed in claim 1 based on black arsenic phosphorus, it is characterised in that also include being used for
It is dielectrically separated from the encapsulating structure with air insulated.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720153657.0U CN206628490U (en) | 2017-02-21 | 2017-02-21 | A kind of device for infrared acquisition based on black arsenic phosphorus |
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| CN201720153657.0U CN206628490U (en) | 2017-02-21 | 2017-02-21 | A kind of device for infrared acquisition based on black arsenic phosphorus |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108417660A (en) * | 2018-05-10 | 2018-08-17 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet infrared double-color detector and preparation method thereof |
| CN108428735A (en) * | 2018-03-27 | 2018-08-21 | 南京邮电大学 | A kind of black phosphorus field-effect tube of bi-material layers oxide layer structure |
| CN109449225A (en) * | 2018-10-29 | 2019-03-08 | 合肥工业大学 | Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector and preparation method thereof |
| CN110828604A (en) * | 2019-11-18 | 2020-02-21 | 中国科学院上海技术物理研究所 | Adjustable room-temperature black arsenic-phosphorus terahertz detector and preparation method thereof |
| CN111952400A (en) * | 2020-07-06 | 2020-11-17 | 华南师范大学 | Photoelectric detector of hybrid plasma waveguide |
| CN112331668A (en) * | 2020-10-27 | 2021-02-05 | 复旦大学 | Visible-infrared band two-dimensional charge trapping memory and preparation method thereof |
| CN115831760A (en) * | 2023-02-08 | 2023-03-21 | 中南大学 | Preparation method of field effect transistor and field effect transistor |
-
2017
- 2017-02-21 CN CN201720153657.0U patent/CN206628490U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108428735A (en) * | 2018-03-27 | 2018-08-21 | 南京邮电大学 | A kind of black phosphorus field-effect tube of bi-material layers oxide layer structure |
| CN108417660A (en) * | 2018-05-10 | 2018-08-17 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet infrared double-color detector and preparation method thereof |
| CN109449225A (en) * | 2018-10-29 | 2019-03-08 | 合肥工业大学 | Two selenizing palladium membranes/n-type silicon heterojunction photoelectric detector and preparation method thereof |
| CN110828604A (en) * | 2019-11-18 | 2020-02-21 | 中国科学院上海技术物理研究所 | Adjustable room-temperature black arsenic-phosphorus terahertz detector and preparation method thereof |
| CN111952400A (en) * | 2020-07-06 | 2020-11-17 | 华南师范大学 | Photoelectric detector of hybrid plasma waveguide |
| CN111952400B (en) * | 2020-07-06 | 2022-04-08 | 华南师范大学 | Photoelectric detector of hybrid plasma waveguide |
| CN112331668A (en) * | 2020-10-27 | 2021-02-05 | 复旦大学 | Visible-infrared band two-dimensional charge trapping memory and preparation method thereof |
| CN115831760A (en) * | 2023-02-08 | 2023-03-21 | 中南大学 | Preparation method of field effect transistor and field effect transistor |
| CN115831760B (en) * | 2023-02-08 | 2023-05-26 | 中南大学 | Preparation method of field effect transistor and field effect transistor |
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Granted publication date: 20171110 Termination date: 20180221 |