CN206573468U - A kind of molecular beam epitaxial growth system of integrated growth and measurement - Google Patents
A kind of molecular beam epitaxial growth system of integrated growth and measurement Download PDFInfo
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- CN206573468U CN206573468U CN201720005827.0U CN201720005827U CN206573468U CN 206573468 U CN206573468 U CN 206573468U CN 201720005827 U CN201720005827 U CN 201720005827U CN 206573468 U CN206573468 U CN 206573468U
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- molecular beam
- epitaxial growth
- light
- beam epitaxial
- magneto
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- 238000005259 measurement Methods 0.000 title claims abstract description 19
- 238000011065 in-situ storage Methods 0.000 claims abstract description 29
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 6
- 230000033228 biological regulation Effects 0.000 claims abstract description 3
- 230000005291 magnetic effect Effects 0.000 claims description 26
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 9
- 238000012512 characterization method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
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- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The molecular beam epitaxial growth system of integrated growth and measurement, including molecular beam epitaxial growth chamber, sample manipulations bar, tiltable sample stage, incident light, reflected light, a pair of electromagnet, polarizer, analyzer, laser diode, photodetector, the growth sources of molecular beam epitaxy；Molecular beam epitaxial growth chamber is provided with a pair of forms, and this is the high transparency of laser beam incident and emergent light in molecular beam epitaxial growth system, the form to the low scattering of light to form；Magneto-optic in situ characterizes system and is arranged on the chamber of molecular beam epitaxial growth system；Magneto-optic in situ characterizes system and is polarized polarizer comprising the laser diodes of S molded line polarised lights, regulation linearly polarized light is produced；The polarizer generation laser beam incident that is polarized is incident upon sample surfaces, and the analyzer is to emergent light analyzing；Magneto-optic in situ characterizes system and includes photodetector, and the signal of emergent light is input to lock-in amplifier by detector；Sample stage side is provided with electromagnet.Sample manipulations bar is fixed with tiltable sample stage.
Description
Technical field
The crossing domain that the utility model belongs to technical field of material, especially magnetics, optics is combined, is specifically related to
And the thin magnetic film to molecular beam epitaxial growth, in-situ characterization technology, surface magneto-optical kerr effect, ultra-high vacuum system etc..Can
Various magnetic materials, nanostructured and the device based on magnetic material of in-situ characterization molecular beam epitaxial growth.
Background technology
The thin magnetic film and nanostructured of molecular beam epitaxial growth are the ideal platforms for realizing novel physical electronic application.
Spin in terms of research, Kerr magnetooptical effect is one of most strong and widely used technology of analyzing magnetic film.Its principle is
Kerr magnetooptical effect：After a branch of linearly polarized light reflects from magnetic sample surface, the plane of polarization of linearly polarized light can deflect, partially
The size turned is directly proportional to the magnetic of sample.Generally speaking, magneto-optic measurement is all carried out in outside or embedded system substantially, but
Both the above situation generally requires to cover one layer of non magnetic or oxidation protective layer on thin magnetic film again, and these operations can shadow
Ring the final measurement of thin film magnetic.For the pursuit to detecting thin magnetic film intrinsic property, utility model magneto-optic in situ
Characterization technique is simultaneously integrated into molecular beam epitaxial growth system.
Utility model content
The utility model purpose is the molecular beam epitaxial growth system of a kind of integrated growth and measurement to be proposed, by magnetic in situ
Light characterization technique is simultaneously integrated into molecular beam epitaxial growth system.The final measurement of thin film magnetic is not interfered with, but is obtained
Accurate measurement result.
The technical solution of the utility model is, the molecular beam epitaxial growth system of integrated growth and measurement, including molecular beam
Epitaxial growth chamber, (2) sample manipulations bar, (3) tiltable sample stage, (4) incident light, (5) reflected light, (6) a pair of electromagnetism
Iron, (7) polarizer, (8) analyzer, (9) laser diode, (10) photodetector, the growth source of molecular beam epitaxy；Molecular beam
Epitaxial growth chamber is provided with a pair of forms, and this is laser beam incident and emergent light in molecular beam epitaxial growth system to form
High transparency, the form to the low scattering of light；Magneto-optic in situ characterizes system and is arranged on the chamber of molecular beam epitaxial growth system；It is in situ
Magneto-optic characterizes system and is polarized polarizer, magneto-optic in situ comprising the laser diode of S molded line polarised lights, regulation linearly polarized light is produced
Sign system includes the analyzer that the oval thickness i.e. emergent light being reflected back to sample surfaces is detected；It is described to be polarized polarizer production
Raw laser beam incident is incident upon sample surfaces, and the analyzer is to emergent light analyzing；Magneto-optic in situ characterizes system and includes high response
The signal of emergent light is input to lock-in amplifier by photodetector, detector；Sample stage side is provided with electromagnet, the magnetic of electromagnet
Property by electromagnet coil electric current provide.Sample manipulations bar is fixed with tiltable sample stage.
Polarizer, analyzer, photodetector both may be mounted on the flange of form or frame is flat in adjustable optics
On platform.
Sample manipulations bar is three axes control bar.
Magneto-optic in situ characterizes system and is arranged in molecular beam epitaxial growth system, is mainly produced by laser diode, polarizer
Raw laser beam incident, the emergent light after sample are constituted through analyzer, photodetector, lock-in amplifier and computer.Wherein light
The department of the Chinese Academy of Sciences point includes laser diode, polarizer, analyzer, can be arranged on the photodetector of form outside or optical table.Point
Three axes control bar and tiltable sample stage in beamlet epitaxial growth system are easy to the alignment of laser during measurement.Molecular beam epitaxy
Laser light incident and outgoing form on growing system have the characteristics of high transparency and scattering low to light.Growth source is generation molecular beam
Carry out the growth source of molecular beam epitaxial growth.
Magneto-optic in situ characterizes system and includes program control computer, the magnetic of electromagnet can be set by program and analyze lock phase
The signal of amplifier output.
Magneto-optic characterization technique in situ is the Kerr magnetooptical effect based on thin magnetic film surface；Magneto-optic in situ characterizes system encapsulation
In possessing the molecular beam epitaxial growth system of ultra-high vacuum environment, the film of growth in situ can quickly be measured, be kept away
The outside magneto-optic for having exempted to add coating and carry out is measured.Molecular beam epitaxial growth system includes three axle sample manipulations bars, can inclined
Oblique sample stage (being easy to be directed at laser during in site measurement).
Beneficial effect：The magneto-optic characterization technique in situ of thin magnetic film can be quickly measured the utility model discloses a kind of, is kept away
The outside magneto-optic measurement exempted from extraneous growth coating and carried out.Magneto-optic characterization technique in situ is the strong work of quick magneto-optic measurement
Tool, it is to avoid molecular beam epitaxial growth material carries out the magneto-optic measurement of outside after addition coating；Allow researcher in life
The intrinsic properties of pure thin films is detected in long deposition process in real time.By continuing to monitor the magnetic of growth in situ film and transporting spy
Property, the characteristic variations of thickness of sample dependence can accurately be obtained in growth course.And outside magneto-optic measurement will obtain above-mentioned
Identical result of study then needs to grow a series of sample of thickness changes to be tested.Magnetic in situ under UHV condition
Light, which is characterized, can reflect the real characteristic of ultrathin membrane in itself, prevent the regrowth process of ultrathin membrane surface coating.It is this
Magneto-optic measurement in situ effectively eliminates influence of the coating to magnetic sample, really presents the magnetic of molecular beam epitaxial growth
The information such as the intrinsic magnetic of sample so that experiment is relatively reliable and repeated stronger.
Brief description of the drawings
Fig. 1 is the utility model magneto-optic measurement structural representation in situ.
Embodiment
Structure of the present utility model is as shown in figure 1, (1) molecular beam epitaxial growth chamber, (2) sample manipulations bar, (3) can incline
Oblique sample stage, (4) incident light, (5) reflected light, (6) a pair of electromagnet, (7) polarizer, (8) analyzer, the poles of (9) laser two
Pipe, (10) photodetector, the form on (11) molecular beam epitaxy system, (12) lock-in amplifier, (13) computer, (14) electricity
Cable, (15) moveable optical table, (16) growth source, (17) sample in-situ magneto-optic characterize system and are arranged on molecular beam epitaxy
On the chamber of growing system.First, S molded line polarised light (the electric field intensity direction of vibration of polarised light is perpendicular to the incident plane of light)
Produced by laser diode, and pass through the higher linearly polarized light of polarizer formation degree of polarization.When linearly polarized light gets to magnetic surface
When, sample magnetic makes linearly polarized light generation magneto-optic coupling and then polarised light is transformed into oval thickness.Then, oval thickness is reflected by surface
And through analyzer, gathered by the photodetector of quick response.Finally, the signal collected is passed after amplifying through lock-in amplifier
Computer is sent to, by software analysis, the variation diagram of sample magnetic is drawn out.Laser light incident and go out in molecular beam epitaxial growth system
The form penetrated must possess the characteristics of high transparency, scattering low to light.
Magneto-optic in situ characterizes system and molecular beam epitaxial growth system altitude is integrated, can be real-time in growth course
Carry out measured thin film.Opticator includes laser diode, polarizer, analyzer, photodetector, wherein photodetector
Both may be mounted on the flange of form and can frame on optical table.Form is all installed at laser light incident and outgoing, its height
Transparent, the scattering to light is extremely low.
Program of the measurement of system on computer is characterized based on magneto-optic in situ to be controlled, programmed instruction is according to measuring environment
The magnetic size of sample two ends electromagnet can be set.Particularly, the utility model is to needing the survey of holding ultra-high vacuum environment
Quantity research is significant.
Claims (3)
1. the molecular beam epitaxial growth system of integrated growth and measurement, it is characterized in that including molecular beam epitaxial growth chamber, sample
Control stick (2), tiltable sample stage (3), incident light (4), reflected light (5), a pair of electromagnet (6), polarizer (7), analyzings
Device (8), laser diode (9), photodetector (10), the growth source of molecular beam epitaxy；Set on molecular beam epitaxial growth chamber
Have a pair of forms, this be to form the high transparency of laser beam incident and emergent light in molecular beam epitaxial growth system, it is low to light dissipate
The form penetrated；Magneto-optic in situ characterizes system and is arranged on the chamber of molecular beam epitaxial growth system；Magneto-optic in situ characterizes system bag
Be polarized polarizer containing the laser diodes of S molded line polarised lights, regulation linearly polarized light is produced, magneto-optic in situ characterize system comprising pair
The analyzer that the oval thickness that sample surfaces are reflected back i.e. emergent light is detected；The polarizer generation laser beam incident that is polarized is penetrated
To sample surfaces, the analyzer is to emergent light analyzing；Magneto-optic in situ characterizes system and includes photodetector, and detector is by outgoing
The signal of light is input to lock-in amplifier；Sample stage side is provided with electromagnet, and the magnetic of electromagnet is carried by the electric current of electromagnet coil
For；Sample manipulations bar is fixed with tiltable sample stage.
2. molecular beam epitaxial growth system according to claim 1, it is characterized in that polarizer, analyzer, photodetector
Both it may be mounted on the flange of form or frame be on adjustable optical table.
3. molecular beam epitaxial growth system according to claim 1, it is characterized in that sample manipulations bar is three axes control bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720005827.0U CN206573468U (en) | 2017-01-04 | 2017-01-04 | A kind of molecular beam epitaxial growth system of integrated growth and measurement |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720005827.0U CN206573468U (en) | 2017-01-04 | 2017-01-04 | A kind of molecular beam epitaxial growth system of integrated growth and measurement |
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| Publication Number | Publication Date |
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| CN206573468U true CN206573468U (en) | 2017-10-20 |
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| CN201720005827.0U Expired - Fee Related CN206573468U (en) | 2017-01-04 | 2017-01-04 | A kind of molecular beam epitaxial growth system of integrated growth and measurement |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106769889A (en) * | 2017-01-04 | 2017-05-31 | 南京大学 | A kind of integrated growth and the molecular beam epitaxial growth system for measuring |
| CN113502535A (en) * | 2021-09-09 | 2021-10-15 | 材料科学姑苏实验室 | Sample growth device, sample growth method and molecular beam epitaxy system |
-
2017
- 2017-01-04 CN CN201720005827.0U patent/CN206573468U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106769889A (en) * | 2017-01-04 | 2017-05-31 | 南京大学 | A kind of integrated growth and the molecular beam epitaxial growth system for measuring |
| CN113502535A (en) * | 2021-09-09 | 2021-10-15 | 材料科学姑苏实验室 | Sample growth device, sample growth method and molecular beam epitaxy system |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171020 Termination date: 20210104 |
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| CF01 | Termination of patent right due to non-payment of annual fee |