CN206556676U - High-speed microwave amplifies photodetector - Google Patents
High-speed microwave amplifies photodetector Download PDFInfo
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- CN206556676U CN206556676U CN201720249626.5U CN201720249626U CN206556676U CN 206556676 U CN206556676 U CN 206556676U CN 201720249626 U CN201720249626 U CN 201720249626U CN 206556676 U CN206556676 U CN 206556676U
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Abstract
The utility model is related to a kind of photodetector, more particularly to high-speed microwave amplification photodetector.Compared with prior art, the utility model high-speed microwave amplification photodetector mainly includes detector chip, optical-electrical converter, amplifying circuit, control circuit and drive circuit, the detector chip input connects optical signal input, detector chip output end connects optical-electrical converter input, optical-electrical converter output end connects input amplifier, input amplifier connection control circuit output end, control circuit output end connects drive circuit input, drive circuit output end connects detector chip input, the amplification circuit output end exports radiofrequency signal, DC signal accesses the control circuit.
Description
Technical field
The utility model is related to a kind of photodetector, more particularly to high-speed microwave amplification photodetector.
Background technology
The detector generally used in the market is common photodetector, and the principle of photodetector is by radiating
Illuminated material electric conductivity is caused to change.Optical signal can be converted to electric signal by photodetector.According to device to radiation
The mechanism of the different work of device in other words of the mode of response is different, and photodetector can be divided into two major classes：One class is photon detection
Device；Another kind of is thermal detector.Its broadband of photodetector of the prior art is narrower, and noise is big, and gain is low, and specification is waited not less
Foot.
The content of the invention
For above-mentioned weak point of the prior art, the utility model aims to provide a kind of high-speed microwave amplification photoelectricity and visited
Device is surveyed, its is simple in construction, photoelectricity hybrid integrated, easy to operate, wide bandwidth, high-gain, low noise, air-tight packaging and cost
It is low.
To achieve the above object, the technical solution of the utility model：A kind of high-speed microwave amplifies photodetector, the system
Mainly include detector chip, optical-electrical converter, amplifying circuit, control circuit and drive circuit, the detector chip input
End connection optical signal input, detector chip output end connection optical-electrical converter input, the connection of optical-electrical converter output end
Input amplifier, input amplifier connection control circuit output end, control circuit output end connection drive circuit is defeated
Enter end, drive circuit output end connection detector chip input, the amplification circuit output end exports radiofrequency signal, direct current
Signal accesses the control circuit.
The beneficial effects of the utility model：Compared with prior art, the utility model high-speed microwave amplification photodetector
Structure design advantages of simple, photoelectricity hybrid integrated, easy to operate, wide bandwidth, product quality is high, high-gain, low noise, air-tightness
Encapsulate and cost is low.
Brief description of the drawings
Fig. 1 is functional block diagram of the present utility model；
Fig. 2 is detector chip internal structure schematic diagram in the utility model.
1. detector chip in accompanying drawing；2. optical-electrical converter；3. amplifying circuit；4. control circuit；5. drive circuit；6. light
Signal input part；7.n electrodes；8.n type InP Semiconductor substrates；9.n type InP cushions；10.i type InGaAs absorbed layers；11.n
Type InP transition zones；12.III-V races top layer；13. passivation film；14. anti-reflection transition film layer；15.p type electrode metal layers；16.
Insulating barrier；17. metal light shield layer；18. anti-reflection film layer；51. photosensitive area of adulterating；52. adulterate protection ring.
Embodiment
The utility model is further described with reference to specific embodiment and accompanying drawing.
As shown in figure 1, the utility model mainly includes detector chip 1, optical-electrical converter 2, amplifying circuit 3, control electricity
Road 4 and drive circuit 5, the input of detector chip 1 connect optical signal input 6, the output end of detector chip 1 connection light
The input of electric transducer 2, the output end of the optical-electrical converter 2 connection input of amplifying circuit 3, the connection control of the input of amplifying circuit 3
The output end of circuit 4, the control circuit 4 output end connection input of drive circuit 5, the output end of drive circuit 5 connection detector chip 1
Input, the output end of amplifying circuit 3 exports radiofrequency signal, the DC signal access control circuit 4.
As shown in Fig. 2 detector chip 1 described in the utility model is mainly InGaAs type detector chips, including extension
Piece forms the n-electrode 7 of Ohmic contact with its back side, and described epitaxial wafer continuously grows from n-type InP Semiconductor substrates 8：
One n-type InP cushions 9；One i type InGaAs absorbed layers 10；One n-type InP transition zones 11；One n-type at least ternary with
On iii-v top layer 12, the center of n-type InP transition zones 11 provided with one doping photosensitive area 51 and one doping protection ring 52；Position
A passivation film 13 and an anti-reflection transition film layer 14 are sequentially provided with the upper surface of n-type InP transition zones 11；Transition that this is anti-reflection
The part surface of film layer 14 is provided with a p-type electrode metal layer 15；Another part is provided with an insulating barrier 15；The surface of insulating layer is set
There is a metal light shield layer 17；One anti-reflection film layer 18 is on the metal light shield layer 17, insulating barrier 16 and doping photosensitive area 51
Surface.
As shown in figure 1, amplifying circuit 3 described in the utility model includes enlarging section, possess input amplifying stage and output stage, if
The first amplifier element and the second amplifier element put in above-mentioned output stage are acted as push-pull circuit；
First voltage buffer, its input is connected to the output end of above-mentioned enlarging section, and its output end passes through first phase
Compensating electric capacity is connected to the signal input part of above-mentioned first amplifier element, and is connected to by second phase compensating electric capacity above-mentioned
The signal input part of second amplifier element；
And second voltage buffer, its input be connected to above-mentioned enlarging section output end or above-mentioned first voltage buffering
The output end of device, the signal that its output end is connected to above-mentioned first amplifier element at least through third phase compensating electric capacity is inputted
End.
As shown in figure 1, in actual work, high-speed microwave amplification photodetector is mainly used in 50 ohmages
The numeral and simulation application for the radio frequency connection matched somebody with somebody, the system are mixed by an InGaAs detector chip and low-noise amplifier photoelectricity
Intersection complies with wavelength covering 1000nm to 1650nm into, InGaAs detector chips, module can provide bandwidth 12GHz,
Two kinds of specifications of 18GHz, and low-noise amplifier provides two kinds of rf gains of one-level 13dB and two grades of 23dB, and module is by+5V electricity
Source powers, air-tight packaging, using the 9/125 μm of single-mode fiber input interface and SMA radio frequency connectors of standard, 50 Ω impedances
With output interface.
The technical scheme that the utility model embodiment is provided is described in detail above, it is used herein specifically
Individual example is set forth to the principle and embodiment of the utility model embodiment, and the explanation of above example is only applicable to side
Assistant solves the principle of the utility model embodiment；Simultaneously for those of ordinary skill in the art, implement according to the utility model
Example, will change, in summary, this specification content should not be construed as in embodiment and application
To limitation of the present utility model.
Claims (3)
1. a kind of high-speed microwave amplifies photodetector, it is characterised in that：Including detector chip (1), optical-electrical converter (2),
Amplifying circuit (3), control circuit (4) and drive circuit (5), detector chip (1) input connect optical signal input
(6), detector chip (1) output end connects optical-electrical converter (2) input, optical-electrical converter (2) output
End connection amplifying circuit (3) input, described described control circuit (4) output end of amplifying circuit (3) input connection, institute
State control circuit (4) output end and connect drive circuit (5) input, drive circuit (5) the output end connection is described to be visited
Device chip (1) input is surveyed, amplifying circuit (3) output end exports radiofrequency signal, the DC signal access control electricity
Road (4).
2. high-speed microwave according to claim 1 amplifies photodetector, it is characterised in that：The detector chip (1)
Predominantly InGaAs types detector chip, including epitaxial wafer and the n-electrode (7) of its back side formation Ohmic contact, described extension
Piece continuously grows from n-type InP Semiconductor substrates (8)：
One n-type InP cushions (9)；One i type InGaAs absorbed layers (10)；One n-type InP transition zones (11)；One n-type at least ternary
III-V race's top layer (12) above, n-type InP transition zones (11) center is protected provided with doping photosensitive area (51) and a doping
Retaining ring (52)；A passivation film (13) and an anti-reflection transition film are sequentially provided with positioned at n-type InP transition zones (11) upper surface
Layer (14)；The part surface of transition film layer that this is anti-reflection (14) is provided with a p-type electrode metal layer (15)；Another part is exhausted provided with one
Edge layer (16)；The surface of insulating layer is provided with a metal light shield layer (17)；One anti-reflection film layer (18) is located at the metal light shield layer
(17), insulating barrier (16) and doping photosensitive area (51) upper surface.
3. high-speed microwave according to claim 1 amplifies photodetector, it is characterised in that：Amplifying circuit (3) bag
Enlarging section is included, possesses input amplifying stage and output stage, the first amplifier element being arranged in the output stage and the second amplification member
Part is acted as push-pull circuit；
First voltage buffer, its input is connected to the output end of the enlarging section, and its output end is compensated by first phase
Capacitance connection is connected to described second in the signal input part of first amplifier element, and by second phase compensating electric capacity
The signal input part of amplifier element；
And second voltage buffer, its input is connected to the output end or the first voltage buffer of the enlarging section
Output end, its output end is connected to the signal input part of first amplifier element at least through third phase compensating electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720249626.5U CN206556676U (en) | 2017-03-14 | 2017-03-14 | High-speed microwave amplifies photodetector |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720249626.5U CN206556676U (en) | 2017-03-14 | 2017-03-14 | High-speed microwave amplifies photodetector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109540303A (en) * | 2018-11-09 | 2019-03-29 | 中国科学院长春光学精密机械与物理研究所 | A kind of two dimension ultraviolet photon counting imaging detector |
| CN112187364A (en) * | 2020-09-29 | 2021-01-05 | 大连优迅科技有限公司 | High-speed broadband microwave detector module |
-
2017
- 2017-03-14 CN CN201720249626.5U patent/CN206556676U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109540303A (en) * | 2018-11-09 | 2019-03-29 | 中国科学院长春光学精密机械与物理研究所 | A kind of two dimension ultraviolet photon counting imaging detector |
| CN112187364A (en) * | 2020-09-29 | 2021-01-05 | 大连优迅科技有限公司 | High-speed broadband microwave detector module |
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