CN206471332U - Display panel and display device - Google Patents
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- CN206471332U CN206471332U CN201621449013.8U CN201621449013U CN206471332U CN 206471332 U CN206471332 U CN 206471332U CN 201621449013 U CN201621449013 U CN 201621449013U CN 206471332 U CN206471332 U CN 206471332U
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Abstract
A kind of display panel, with the silicon thin film transistor being arranged in same pixel cell, oxide semi conductor transistor and multiple insulating barriers, the silicon thin film transistor includes silicon thin film semiconductor layer, first grid, the first source electrode and the first drain electrode；The oxide semi conductor transistor includes second grid, oxide semiconductor layer, the second source electrode and the second drain electrode, wherein, the display panel also includes hydrogen sacrifice layer, and the hydrogen sacrifice layer is used to intercept to dissociate to the hydrogen of the oxide semiconductor layer of the oxide semi conductor transistor.Display panel of the present utility model can improve the stability of oxide semi conductor transistor.The utility model further relates to a kind of display device.
Description
Technical field
The utility model is related to a kind of display panel and the display device with it, belongs to technical field of flat panel display.
Background technology
The species of Display Technique is more, including LCD (Liquid Crystal Display, liquid crystal display) and OLED
(Organic Light-Emitting Diode, organic light-emitting diode display) etc..Wherein OLED is shown with self-luminous, gently
The advantages of thin power saving, also flexible display apparatus can be made based on flexible material, can be curled, fold or as wearable
A part for equipment.OLED refers to using organic semiconducting materials and luminescent material under electric field driven, is injected by carrier
With the diode of composite guide photoluminescence.OLED principle of luminosity is the sun for using ito transparent electrode and metal electrode respectively as device
Pole and negative electrode, under certain voltage driving, electronics and hole are injected into electronics and hole transmission layer from negative electrode and anode respectively, electricity
Son and hole move to luminescent layer respectively through electronics and hole transmission layer, and are met in luminescent layer, form exciton and make hair
Optical molecule excites and sends visible ray.
According to the difference of type of drive, OLED can be divided into PMOLED (Passive Matrix/Organic Light
Emitting Diode, passive matrix Organic Light Emitting Diode) and AMOLED (Active Matrix/Organic Light
Emitting Diode, active matrix organic light-emitting diode) two kinds, AMOLED have it is thinner it is lighter, actively it is luminous without
Want backlight, without viewing angle problem, high-resolution, high brightness, response quickly, energy consumption is low, temperature in use scope is wide, shock resistance is strong,
The features such as soft display can be achieved, is difficult to, nowadays AMOLED has become master wherein many characteristics are TFT liquid crystal panels
The OLED technology of stream.
AMOLED display panels are by multi-strip scanning line SL, a plurality of data lines DL and form arranged in arrays many of multiple lines and multiple rows
Individual pixel cell etc. is constituted, and the pixel-driving circuit for being used for driving organic light-emitting diode is provided with each pixel cell,
The most basic structure of pixel-driving circuit is 2T1C types, as shown in figure 1, driving transistor T2 is connected to Organic Light Emitting Diode
OLED, to provide the electric current of illuminating, switching transistor T1 provides data voltage VdataTo control driving transistor T2 electricity
Flow, is connected with electric capacity C between driving transistor T2 grid and drain electrode, for maintaining provided one section of voltage predetermined
Time, switching transistor T1 grid is connected to scan line SL, and source electrode is connected to data wire DL, and power supply chip is provided
It is luminous for it to Organic Light Emitting Diode OLED that ELVDD voltages are converted into driving current through driving transistor T2.
In the prior art, switching transistor T1, the driving transistor T2 and AMOLED in AMOLED display panels are made
It is thin that the mainstream type of the transistor of the drive circuit of the neighboring area of display panel etc. includes amorphous silicon film transistor, polysilicon
Three kinds of film transistor and oxide semi conductor transistor.The thin film transistor (TFT) of this three types respectively has feature, wherein, non-crystalline silicon should
With the most extensively, processing procedure is simple, uniformity is good, and mobility is low；Polysilicon processing procedure is complicated, and mobility is high, and uniformity is bad；Oxidation
Thing semiconductor uniformity is good, and processing procedure is simple, and cost is high.The general display demand according to panel of prior art, is selected different classes of
Thin film transistor (TFT) make.In the actual production of AMOLED display panels, monoblock substrate typically uses identical films transistor,
But such a preparation method can not meet property requirements of the different zones to thin film transistor (TFT), cause a certain degree of characteristic and lack
Lose.With the development of Display Technique, silicon thin film transistor (non-crystalline silicon and polysilicon) and oxide semi conductor transistor phase are utilized
With reference to the pixel-driving circuit and the technology of the drive circuit of neighboring area for making AMOLED display panels increasingly by the industry
Concern.But the mixed structure of silicon thin film transistor and oxide semi conductor transistor is used, there is oxide semiconductor brilliant
The problem of gate insulator in body pipe is blocked up is, it is necessary to which larger driving voltage, power consumption is larger；Further, silicon thin film transistor
Semiconductor layer typically can all adulterate the hydrogen of high level, and the hydrogen of the doping in the semiconductor layer of silicon thin film transistor can lead to after separating out
Insulating barrier for being made by SiNx materials etc. is crossed to dissociate to other positions, therefore the oxide semiconductor of oxide semi conductor transistor
The hydrogen doping that is easily oozed out from silicon thin film transistor of layer and become conductor, and then cause the property of oxide semi conductor transistor
Can failure.
Utility model content
The purpose of this utility model is to provide a kind of display panel, while having silicon thin film transistor and oxide partly to lead
Body transistor, and improve the stability of oxide semi conductor transistor.
The display panel that the utility model embodiment is provided, with the silicon thin film crystal being arranged in same pixel cell
Pipe, oxide semi conductor transistor and multiple insulating barriers, the silicon thin film transistor include silicon thin film semiconductor layer, the first grid
Pole, the first source electrode and the first drain electrode；The oxide semi conductor transistor includes second grid, oxide semiconductor layer, second
Source electrode and the second drain electrode, wherein, the display panel also includes hydrogen sacrifice layer, and the hydrogen sacrifice layer is used to intercept to dissociate to described
The hydrogen of the oxide semiconductor layer of oxide semi conductor transistor.
Further, under the hydrogen sacrifice layer is correspondingly arranged at the oxide semi conductor transistor position
Side.
Further, the material of the hydrogen sacrifice layer is SiOXOr low hydrogen non-crystalline silicon, thickness isExtremely
Further, the display panel includes the silicon thin film semiconductor of substrate and setting on the substrate
Layer, the first insulating barrier, the hydrogen sacrifice layer, the first metal layer, the second insulating barrier, the 3rd insulating barrier, the oxide semiconductor
Layer and second metal layer；The silicon thin film semiconductor layer formation is on the substrate；The first insulating barrier formation is in the base
On plate and cover the silicon thin film semiconductor layer；The hydrogen sacrifice layer formation is on first insulating barrier and thin with the silicon
Film semiconductor layer is in the non-overlapping region on the orientation substrate；The first metal layer formation is in first insulating barrier
On hydrogen sacrifice layer, including the first grid and the second grid, the first grid is positioned at the silicon thin film semiconductor
The surface of layer, the second grid is located at the top of hydrogen sacrifice layer；The second insulating barrier formation is in first insulating barrier
Go up and cover the first grid；3rd insulating barrier formation on the substrate and cover second insulating barrier, it is described
Hydrogen sacrifice layer and the second grid；The oxide semiconductor layer formation is on the 3rd insulating barrier and positioned at described second
The surface of grid；The second metal layer formation is on the 3rd insulating barrier.
Further, the display panel has logical positioned at the first through hole of the silicon thin film semiconductor layer and second
Hole, the first insulating barrier, the second insulating barrier and the 3rd insulating barrier described in the first through hole insertion are with by the silicon thin film semiconductor
Layer wherein one end exposes, and the first insulating barrier of the second through hole insertion, the second insulating barrier and the 3rd insulating barrier are with by the silicon
The thin film semiconductive layer other end exposes；The second metal layer includes spaced first source electrode, first leakage
Pole, second source electrode and second drain electrode, wherein first source electrode inserts the first through hole and the silicon thin film half
The contact of conductor layer, first drain electrode is inserted second through hole and contacted with the silicon thin film semiconductor layer；Second source
Pole and second drain electrode are covered each by the oxide semiconductor layer of part.
Further, the first metal layer also includes the first capacitor plate, and the second metal layer also includes the second electricity
Hold pole plate, first capacitor plate is located between the silicon thin film transistor and the oxide semi conductor transistor and is located at
The top of the hydrogen sacrifice layer, second capacitor plate is located at the top of first capacitor plate.
Further, the material of the 3rd insulating barrier is SiOXOr Al2O3, thickness isExtremely
Further, in addition to cushion, the cushion formation on the substrate, the silicon thin film semiconductor layer and
The first insulating barrier formation is on the cushion.
Further, in addition to planarization layer and the Organic Light Emitting Diode on the planarization layer.
The utility model also provides a kind of display device, including above-mentioned display panel.
Display panel of the present utility model, including substrate and the silicon thin film semiconductor layer being arranged on substrate, the first insulation
Layer, hydrogen sacrifice layer, the first metal layer, the second insulating barrier, the 3rd insulating barrier, oxide semiconductor layer and second metal layer；Silicon is thin
Film semiconductor layer is formed on substrate；First insulating barrier forms on substrate and covers silicon thin film semiconductor layer；Hydrogen sacrifice layer shape
Into on the first insulating barrier and with silicon thin film semiconductor layer in the non-overlapping region on orientation substrate；The first metal layer shape
Into on the first insulating barrier and hydrogen sacrifice layer, including first grid and second grid, first grid is located at silicon thin film semiconductor layer
Surface, second grid be located at hydrogen sacrifice layer top；The around second insulating barrier covering first grid, but second grid
Two insulating barriers are etched；3rd insulating barrier covers the second grid on the second insulating barrier, hydrogen sacrifice layer and hydrogen sacrifice layer；
Oxide semiconductor layer formation is on the 3rd insulating barrier and positioned at the surface of second grid；Second metal layer formation is exhausted the 3rd
In edge layer.Second metal layer includes spaced first source electrode, the first drain electrode, the second source electrode and the second drain electrode.This practicality is new
The display panel of type forms silicon thin film transistor by silicon thin film semiconductor layer, first grid, the first source electrode and the first drain electrode；By
Two grids, oxide semiconductor layer, the second source electrode and the second drain electrode form oxide semi conductor transistor, realize silicon thin film brilliant
Body pipe and the two distinct types of transistor application of oxide semi conductor transistor meet different zones to crystalline substance in display panel
The feature of body pipe need to be shown；Meanwhile, it is used to capturing near silicon thin film transistor first exhausted by the more hydrogen sacrifice layer of a layer defects
Hydrogen in edge layer and dissociate from other directions to the hydrogen at the position of oxide semi conductor transistor, while etching away oxygen
The second insulating barrier above the second grid of compound semiconductor transistor in (oxide semiconductor layer lower section), protection oxide half
Conductor layer will not be become conductor by hydrogen doping, improve the stability of oxide semi conductor transistor, further optimization and
The perfect performance of display panel.
Brief description of the drawings
Fig. 1 is the structural representation of the pixel-driving circuit of the existing AMOLED display panels with 2T1C structures.
Fig. 2 is the cross-sectional view of the display panel of the utility model preferred embodiment.
Embodiment
Further to illustrate that the utility model is to reach technical approach and effect that predetermined utility model purpose is taken,
Below in conjunction with drawings and Examples, to embodiment of the present utility model, structure, feature and its effect, describe in detail such as
Afterwards.
The display panel that the utility model is provided equally has 2T1C as shown in Figure 1 basic structure, that is, is arranged on same
Silicon thin film transistor 10 and oxide semi conductor transistor 20 in one pixel cell, wherein, due to silicon thin film transistor 10
Relative switch speed and good driving current can be provided and are preferred for making switching transistor, and oxide semiconductor is brilliant
Body pipe 20 has low-leakage current, high mobility and is preferred for the features such as high transmittance making driving transistor.Silicon thin film is brilliant
P-channel or N-channel design can be used to be made for body pipe 10, and N-channel design can be used to be made for oxide semi conductor transistor 20, but simultaneously
It is not limited.
Specific embodiment explanation is made to the display panel that the utility model is provided below.Fig. 2 is that the utility model is preferably real
The cross-sectional view of the display panel of example is applied, the silicon thin film transistor 10 of display panel as Figure 2 illustrates is top-gated knot
Structure, oxide semi conductor transistor 20 is bottom grating structure, but is not limited thereto.Wherein, display panel include substrate 101 and
Silicon thin film semiconductor layer 110 on the substrate 101, the first insulating barrier 120, hydrogen sacrifice layer 130, the first metal layer 140, the are set
Two insulating barriers 150, the 3rd insulating barrier 160, oxide semiconductor layer 170 and second metal layer 180.In the present embodiment, silicon thin film
Semiconductor layer 110 is formed on the substrate 101；First insulating barrier 120 forms on the substrate 101 and covers silicon thin film semiconductor layer
110；Hydrogen sacrifice layer 130 is formed on the first insulating barrier 120 and with silicon thin film semiconductor layer 110 perpendicular to the side of substrate 101
Upward non-overlapping region；The first metal layer 140 is formed on the first insulating barrier 120 and hydrogen sacrifice layer 130, including first grid
141 and second grid 142, first grid 141 is located at the surface of silicon thin film semiconductor layer 110, and it is sacrificial that second grid 142 is located at hydrogen
The top of domestic animal layer 130；Second insulating barrier 150 forms on the first insulating barrier 120 and covers first grid 141, but the second insulation
Layer 150 does not cover second grid 142；3rd insulating barrier 160 forms on the substrate 101 and covers the second insulating barrier 150, hydrogen sacrifice
Second grid 142 on layer 130 and hydrogen sacrifice layer 130；Oxide semiconductor layer 170 is formed on the 3rd insulating barrier 160 simultaneously
Positioned at the surface of second grid 142；Second metal layer 180 is formed on the 3rd insulating barrier 160, including spaced first
The drain electrode of source electrode 181, first 182, second source electrode 183 and the second drain electrode 184, wherein the first source electrode 181 passes through through the 3rd insulation
The first through hole 201 of the 160, second insulating barrier 150 of layer and the first insulating barrier 120 and the end thereof contacts of silicon thin film semiconductor layer 110,
First drain electrode 182 by the second through hole 202 through the 3rd insulating barrier 160, the second insulating barrier 150 and the first insulating barrier 120 with
Another end in contact of silicon thin film semiconductor layer 110, the end thereof contacts of the second source electrode 183 and oxide semiconductor layer 170, the second leakage
Pole 184 and another end in contact of oxide semiconductor layer 170.
Specifically, substrate 101 is, for example, one kind in glass substrate, polymeric substrates or metal substrate.In the present embodiment,
Cushion 102 is additionally provided with substrate 101, cushion 102 is, for example, SiOX、SiNX、SiONX、Al2O3In one or more materials
The single or multiple lift structure formed, cushion 102 can make the surface of substrate 101 more flat and prevent dopants penetration etc. from making
With.
Silicon thin film semiconductor layer 110 is formed on the substrate 101, in the present embodiment, and silicon thin film semiconductor layer 110 is formed in
On the cushion 102 of substrate 101.The material of silicon thin film semiconductor layer 110 is, for example, one kind in non-crystalline silicon or polysilicon, is led to
Cross different doping process so that silicon thin film semiconductor layer 110 is fabricated to P-type channel or N-type channel.
First insulating barrier 120 forms on cushion 102 on the substrate 101 and covers silicon thin film semiconductor layer 110, first
Insulating barrier 120 is, for example, SiOX、SiNX、SiONXIn the single or multiple lift structure that is formed of one or more materials.
Hydrogen sacrifice layer 130 is used to intercept to dissociate to the hydrogen of the oxide semiconductor layer 170 of oxide semi conductor transistor 20,
In the present embodiment, under hydrogen sacrifice layer 130 is correspondingly arranged at the position of oxide semi conductor transistor 20 of the formation
Side, but be not limited thereto.Specifically, hydrogen sacrifice layer 130 is formed on the first insulating barrier 120, and hydrogen sacrifice layer 130 is located at follow-up
The lower section of the oxide semiconductor layer 170 of formation, and hydrogen sacrifice layer 130 and silicon thin film semiconductor layer 110 are perpendicular to substrate 101
Non-overlapping region on direction, i.e. hydrogen sacrifice layer 130 are not covered directly over silicon thin film semiconductor layer 110 and near zone.Hydrogen is sacrificed
The material of layer 130 is, for example, low hydrogen amorphous silicon material or loose SiOX, by the more SiO of defectXThe hydrogen of material formation is sacrificial
Domestic animal layer 130 is used to capture the hydrogen of the near zone of silicon thin film semiconductor layer 110 and dissociated from other directions to oxide semiconductor
Hydrogen at the position of transistor 20, with the oxide semiconductor layer 170 that prevents from excessive hydrogen from going to being subsequently formed.It is other
In embodiment, hydrogen sacrifice layer 130 may also be arranged on it is any can prevent hydrogen from dissociating to the position of oxide semiconductor layer 170, for example,
Ring-type surrounds the oxide semi conductor transistor 20 for continuing and being formed, and sets strip hydrogen sacrificial in the both sides of oxide semi conductor transistor 20
Domestic animal layer 130 etc., in other words, any hydrogen sacrifice layer 130 that is provided with prevent it from being doped into oxide half for hydrogen to be intercepted
The technical scheme of conductor layer 170 is in the utility model protection domain, not exhaustive specific embodiment one by one herein.
The thickness of hydrogen sacrifice layer 130 isExtremely
The first metal layer 140 is formed on the first insulating barrier 120 and on hydrogen sacrifice layer 130, the material example of the first metal layer
It it is preferably Mo layers in one or more combinations in Al, Ti, Mo, Ag, Cr or its alloy in this way, the present embodiment.First metal
Layer 140 includes first grid 141 and second grid 142, and first grid 141 is located at the surface of silicon thin film semiconductor layer 110, the
Two grids 142 are located on hydrogen sacrifice layer 130.
In the present embodiment, the first metal layer 140 also includes the first capacitor plate 143, and it is sacrificial that the first capacitor plate 143 is located at hydrogen
On domestic animal layer 130, but it is not limited thereto.
Second insulating barrier 150 forms on the substrate 101 and covers the first grid 141 of the first metal layer 140, but second exhausted
Edge layer 150 does not cover second grid 142, in other words, in manufacturing process, over and around second exhausted of second grid 142
Edge layer 150 is etched.The material of second insulating barrier 150 is, for example, SiNX.By SiNXThe second insulating barrier 150 that material makes
Containing more hydrogen, the oxide semiconductor layer 170 being subsequently formed to prevent hydrogen from diffusing to influences its performance, thus will shape
The second insulating barrier 150 into the region of oxide semiconductor layer 170 is etched away.
3rd insulating barrier 160 forms on the substrate 101 and covers the second insulating barrier 150, second grid 142 and second gate
The hydrogen sacrifice layer 130 exposed around pole 142.The material of 3rd insulating barrier 160 is, for example, SiOXOr Al2O3.In the present embodiment, the
The thickness of three insulating barriers 160 isExtremely
On the 3rd insulating barrier 160 of formation of oxide semiconductor layer 170 and positioned at the surface of second grid 142.Oxide
The material of semiconductor layer 170 be, for example, In-Ga-Zn-O, ZnO, In-Zn-Sn-O, Sn-Ga-Zn-O, In-Zn-O, Zn-Sn-O,
One kind in Ti-O.
Display panel also has the through hole 202 of first through hole 201 and second, and the through hole 202 of first through hole 201 and second is located at silicon
The top of thin film semiconductive layer 110.Insertion the first insulating barrier 120 of first through hole 201, the second insulating barrier 150 and the 3rd insulating barrier
160 and the doped region of the wherein one end of silicon thin film semiconductor layer 110 is exposed, the first insulating barrier of insertion 120 of the second through hole 202,
Second insulating barrier 150 and the 3rd insulating barrier 160 and the doped region for exposing the other end of silicon thin film semiconductor layer 110.
On the 3rd insulating barrier 160 of formation of second metal layer 180, second metal layer 180 includes spaced first source electrode
181st, first the 182, second source electrode of drain electrode 183 and the second drain electrode 184.Wherein, the first source electrode 181 insert in first through hole 201 with
The wherein end thereof contacts of silicon thin film semiconductor layer 110, the first drain electrode 182 is inserted in the second through hole 202 and silicon thin film semiconductor layer 110
Another end in contact.Second source electrode 183 and the second drain electrode 184 are covered each by the both sides of oxide semiconductor layer 170 so that partial
Oxide semiconductor layer 170 is exposed between the second source electrode 183 and the second drain electrode 184.The material example of second metal layer 180
One or more combinations in Al, Ti, Mo, Ag, Cr or its alloy in this way.
In the present embodiment, second metal layer 180 also includes the second capacitor plate 185, and the second capacitor plate 185 is correspondingly arranged
In the top of the first capacitor plate 143.
The display panel of the present embodiment is by silicon thin film semiconductor layer 110, first grid 141, the first source electrode 181 and the first leakage
Pole 182 forms silicon thin film transistor 10；By second grid 142, oxide semiconductor layer 170, the second source electrode 183 and the second drain electrode
184 form oxide semi conductor transistor 20；Electric capacity 30 is formed by the first capacitor plate 143 and the second capacitor plate 185.Due to
The second insulating barrier around the oxide semiconductor layer 170 of oxide semi conductor transistor 20 and the position of second grid 142
150 are etched, and one layer is only existed between the two by SiOXThe 3rd insulating barrier 160 that material makes, therefore, oxide is partly led
Body transistor 20 will not be because gate insulator be blocked up and needs to increase driving voltage, while being set in the lower section of second grid 142
Hydrogen sacrifice layer 130 is put, hydrogen sacrifice layer 130 is used to capture the hydrogen in the first insulating barrier 120 near silicon thin film transistor 10, prevented
Excessive hydrogen is gone in oxide semiconductor layer 170, is protected oxide semiconductor layer 170 not become conductor by hydrogen doping, is carried
The high stability of oxide semi conductor transistor 20.
Display panel also includes Organic Light Emitting Diode 40, and Organic Light Emitting Diode 40 includes first electrode 410, You Jifa
Photosphere 420 and second electrode 430.
Specifically, referring again to Fig. 2, silicon thin film transistor 10 and oxide semi conductor transistor 20 on the substrate 101
Top forms planarization layer 310, the covering of planarization layer 310 second metal layer 180, the 3rd insulating barrier 160 and from the second source electrode
183 and the second partial oxide semiconductor layer 170 that exposes between drain electrode 184.Planarization layer 310 have third through-hole 311 with
The second drain electrode 184 is set to be exposed from planarization layer 310.
First electrode 410 is formed on planarization layer 310, first electrode 410 insert in third through-hole 311 with second drain electrode
Electrical connection is realized in 184 contacts.First electrode 410 is, for example, the anode of Organic Light Emitting Diode 40.The material of first electrode 410 is adopted
With inorganic material or organic conductive polymer.Inorganic material is generally tin indium oxide (ITO), zinc oxide (ZnO), indium zinc oxide
(IZO) the higher metal of the work function such as metal oxide or gold, copper, silver, preferably ITO such as；Organic conductive polymer is preferably poly-
One kind in thiophene/polyvinylbenzenesulfonic acid sodium (PEDOT/PSS), polyaniline (PANI).
Forming pixel defining layer 320 is used to the organic luminous layer 420 of aftermentioned formation is spaced apart to and is sealed in the first electricity
Between pole 410 and second electrode 430.Pixel defining layer 320 is, for example, that polyimides etc. is made up of photoetching or printing.Pixel circle
Given layer 320 has opening 321, and pixel defining layer 320 is covered in the edge part of first electrode 410, first electrode 410
Between part expose from opening 321.
Organic luminous layer 420 forms in the opening 321 of pixel defining layer 320 and covers the part exposed from opening 321
First electrode 410.Organic luminous layer 420 generally comprises hole injection layer, hole transmission layer, luminescent layer, hole blocking layer, electronics
At least one layer or sandwich construction in transport layer, electron injecting layer stack to be formed.The structure of organic luminous layer 420 is this area skill
Technology known to art personnel, will not be repeated here.
The second electrode lay 430 forms on the substrate 101 and covers pixel defining layer 320 and organic luminous layer 420, the second electricity
Pole layer 430 is typically using lithium, magnesium, calcium, strontium, aluminium, the relatively low metal of work function such as indium or they and copper, the alloy of gold, silver, or gold
The electrode layer that category is alternatively formed with metal fluoride.Second electrode 430 is, for example, the negative electrode of Organic Light Emitting Diode 40.
The utility model further relates to a kind of display device, and it includes above-mentioned display panel.
Display panel of the present utility model, including substrate and the silicon thin film semiconductor layer being arranged on substrate, the first insulation
Layer, hydrogen sacrifice layer, the first metal layer, the second insulating barrier, the 3rd insulating barrier, oxide semiconductor layer and second metal layer；Silicon is thin
Film semiconductor layer is formed on substrate；First insulating barrier forms on substrate and covers silicon thin film semiconductor layer；Hydrogen sacrifice layer shape
Into on the first insulating barrier and with silicon thin film semiconductor layer in the non-overlapping region on orientation substrate；The first metal layer shape
Into on the first insulating barrier and hydrogen sacrifice layer, including first grid and second grid, first grid is located at silicon thin film semiconductor layer
Surface, second grid be located at hydrogen sacrifice layer top；The around second insulating barrier covering first grid, but second grid
Two insulating barriers are etched；3rd insulating barrier covers the second grid on the second insulating barrier, hydrogen sacrifice layer and hydrogen sacrifice layer；
Oxide semiconductor layer formation is on the 3rd insulating barrier and positioned at the surface of second grid；Second metal layer formation is exhausted the 3rd
In edge layer.Second metal layer includes spaced first source electrode, the first drain electrode, the second source electrode and the second drain electrode.This practicality is new
The display panel of type forms silicon thin film transistor by silicon thin film semiconductor layer, first grid, the first source electrode and the first drain electrode；By
Two grids, oxide semiconductor layer, the second source electrode and the second drain electrode form oxide semi conductor transistor, realize silicon thin film brilliant
Body pipe and the two distinct types of transistor application of oxide semi conductor transistor meet different zones to crystalline substance in display panel
The feature of body pipe need to be shown；Meanwhile, it is used to capturing near silicon thin film transistor first exhausted by the more hydrogen sacrifice layer of a layer defects
Hydrogen in edge layer and dissociate from other directions to the hydrogen at the position of oxide semi conductor transistor, while etching away oxygen
The second insulating barrier above the second grid of compound semiconductor transistor in (oxide semiconductor layer lower section), protects oxide
Semiconductor layer will not be become conductor by hydrogen doping, improve the stability of oxide semi conductor transistor, further optimization
With the perfect performance of display panel.
It is described above, only it is preferred embodiment of the present utility model, not makees any formal to the utility model
Limitation, although the utility model is disclosed above with preferred embodiment, but is not limited to the utility model, any ripe
Professional and technical personnel is known, is not being departed from the range of technical solutions of the utility model, when in the technology using the disclosure above
Hold the equivalent embodiment made a little change or be modified to equivalent variations, as long as being without departing from technical solutions of the utility model
Hold, any simple modification, equivalent variations and the modification made according to technical spirit of the present utility model to above example, still
Belong in the range of technical solutions of the utility model.
Claims (10)
1. a kind of display panel, it is characterised in that with silicon thin film transistor (10), the oxygen being arranged in same pixel cell
Compound semiconductor transistor (20) and multiple insulating barriers, the silicon thin film transistor (10) include silicon thin film semiconductor layer
(110), first grid (141), the first source electrode (181) and the first drain electrode (182)；Oxide semi conductor transistor (20) bag
Second grid (142), oxide semiconductor layer (170), the second source electrode (183) and the second drain electrode (184) are included, wherein, it is described aobvious
Show that panel also includes hydrogen sacrifice layer (130), the hydrogen sacrifice layer (130) is used to intercept to dissociate to the oxide semiconductor crystal
Manage the hydrogen of the oxide semiconductor layer (170) of (20).
2. display panel according to claim 1, it is characterised in that the hydrogen sacrifice layer (130) is correspondingly arranged at described
Lower section at oxide semi conductor transistor (20) position.
3. display panel according to claim 1, it is characterised in that the material of the hydrogen sacrifice layer (130) is SiOXOr it is low
Hydrogen non-crystalline silicon, thickness isExtremely
4. display panel according to claim 1, it is characterised in that the display panel includes substrate (101) and set
Put the silicon thin film semiconductor layer (110) on the substrate (101), the first insulating barrier (120), the hydrogen sacrifice layer
(130), the first metal layer (140), the second insulating barrier (150), the 3rd insulating barrier (160), the oxide semiconductor layer (170)
With second metal layer (180)；The silicon thin film semiconductor layer (110) is formed on the substrate (101)；First insulating barrier
(120) formed on the substrate (101) and cover the silicon thin film semiconductor layer (110)；The hydrogen sacrifice layer (130) is formed
Perpendicular to the substrate (101) direction on first insulating barrier (120) and with the silicon thin film semiconductor layer (110)
Upper non-overlapping region；The first metal layer (140) is formed on first insulating barrier (120) and hydrogen sacrifice layer (130), bag
The first grid (141) and the second grid (142) are included, the first grid (141) is located at the silicon thin film semiconductor
The surface of layer (110), the second grid (142) is located at the top of hydrogen sacrifice layer (130)；Second insulating barrier (150)
Formed on first insulating barrier (120) and cover the first grid (141)；3rd insulating barrier (160) is formed
On the substrate (101) and cover second insulating barrier (150), the hydrogen sacrifice layer (130) and the second grid
(142)；The oxide semiconductor layer (170) is formed on the 3rd insulating barrier (160) and positioned at the second grid
(142) surface；The second metal layer (180) is formed on the 3rd insulating barrier (160).
5. display panel according to claim 4, it is characterised in that the display panel, which has, is located at the silicon thin film half
First through hole (201) and the second through hole (202) above conductor layer (110), first is exhausted described in first through hole (201) insertion
Edge layer (120), the second insulating barrier (150) and the 3rd insulating barrier (160) are with by the silicon thin film semiconductor layer (110) wherein one end
Expose, the second through hole (202) first insulating barrier of insertion (120), the second insulating barrier (150) and the 3rd insulating barrier (160)
So that silicon thin film semiconductor layer (110) other end to be exposed；The second metal layer (180) includes spaced described
First source electrode (181), first drain electrode (182), second source electrode (183) and second drain electrode (184), wherein described
First source electrode (181) inserts the contact of the first through hole (201) and the silicon thin film semiconductor layer (110), first leakage
Pole (182) is inserted second through hole (202) and contacted with the silicon thin film semiconductor layer (110)；Second source electrode (183) and
Second drain electrode (184) is covered each by the oxide semiconductor layer (170) of part.
6. display panel according to claim 4, it is characterised in that the first metal layer (140) also includes the first electricity
Hold pole plate (143), the second metal layer (180) also includes the second capacitor plate (185), first capacitor plate (143)
Between the silicon thin film transistor (10) and the oxide semi conductor transistor (20) and positioned at the hydrogen sacrifice layer
(130) top, second capacitor plate (185) is located at the top of first capacitor plate (143).
7. display panel according to claim 4, it is characterised in that the material of the 3rd insulating barrier (160) is SiOXOr
Al2O3, thickness isExtremely
8. display panel according to claim 4, it is characterised in that also including cushion (102), the cushion
(102) formed on the substrate (101), the silicon thin film semiconductor layer (110) and first insulating barrier (120) formation exist
On the cushion (102).
9. display panel according to claim 4, it is characterised in that also including planarization layer (310) and positioned at described flat
Organic Light Emitting Diode (40) on smoothization layer (310).
10. a kind of display device, it is characterised in that including the display panel as described in any one of claim 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621449013.8U CN206471332U (en) | 2016-12-26 | 2016-12-26 | Display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN109449210A (en) * | 2018-09-19 | 2019-03-08 | 云谷（固安）科技有限公司 | Drive thin film transistor (TFT) and preparation method, array substrate and display device |
| CN109449210B (en) * | 2018-09-19 | 2022-06-10 | 云谷（固安）科技有限公司 | Array substrate and display device |
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