CN206470289U - A kind of MEMS acceleration transducer signals modulate circuit - Google Patents
A kind of MEMS acceleration transducer signals modulate circuit Download PDFInfo
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- CN206470289U CN206470289U CN201720107754.6U CN201720107754U CN206470289U CN 206470289 U CN206470289 U CN 206470289U CN 201720107754 U CN201720107754 U CN 201720107754U CN 206470289 U CN206470289 U CN 206470289U
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Abstract
The utility model discloses a kind of MEMS acceleration transducer signals modulate circuit, it includes MEMS chip, instrument amplifier, gain resistor and voltage reference circuit, the signal output of MEMS chip terminates to the positive input or negative input of instrument amplifier, the output of voltage reference circuit terminates to the negative input or positive input of instrument amplifier, the gain resistor of gain resistor access instrument amplifier sets pin, the reference voltage pin ground connection of instrument amplifier.MEMS acceleration transducer signals modulate circuit of the present utility model, circuit components are less, and small volume, cost is relatively low, and reliability is stronger；And can improve the flexibility of MEMS chip installation by the operative orientation of circuit flexible modulation acceleration transducer, the installation direction without changing MEMS chip, sensor bulk can be reduced；It can also synchronously amplify zero point and the effect of sensitivity.
Description
Technical field
The utility model is related to MEMS acceleration transducers field, and in particular to a kind of MEMS acceleration transducer signals are adjusted
Manage circuit.
Background technology
MEMS acceleration transducers are lightweight because with small volume, low in energy consumption, and reliability is high and the features such as good stability
And by extensive use.Common MEMS acceleration transducers are broadly divided into MEMS and become capacitance acceleration transducer and MEMS pressures
Resistive acceleration transducer.MEMS acceleration transducers are general by MEMS acceleration sensor chips（Hereinafter referred to as " MEMS cores
Piece "）, circuit board, connector or cable and package casing etc. constitute.MEMS chip is used to sense acceleration signal, will accelerate
Degree is converted into voltage signal output；There is signal conditioning circuit on circuit board, signal is adjusted；Connector or cable are used for
Transmit signal；Package casing is used to protect internal components, while being used as installation carrier.
Generally, the output characteristics of MEMS chip in itself can not directly meet use requirement, it is often necessary to output
Signal is adjusted, i.e., realized by signal conditioning circuit, to meet the use requirement of sensor.Determine MEMS acceleration sensings
Two leading indicators of device performance are offset outputs（Output voltage under 0g acceleration, or it is referred to as " bias voltage "）With it is sensitive
Degree.Offset output and the general signal conditioning circuit by such as Fig. 1 of regulation of sensitivity are realized（In Fig. 1, VCC represents each core
The operating voltage of piece）.It adjusts formula：Vout=G(VMEMS-VREF1)+VREF2.Wherein G is output signal multiplication factor, by scheming
The resistance of gain resistor RG in 1 is determined.
MEMS chip U1 exports V in itselfMEMSIn the presence of a DC offset voltage, it is desirable to provide a reference offset voltage
VREF1, size is equal to the magnitude of voltage for the DC offset voltage that MEMS chip U1 is exported, to offset the biasings of MEMS chip U1 originally
Voltage, now offset output is 0V, after instrument amplifier chip U2 amplifies G times to signal, then passes through benchmark adjustment pin
Apply reference offset voltage VREF2, the bias voltage of sensor is VREF2.Such a method, due to being that MEMS chip is exported in itself
DC offset voltage all balance out, the influence so produced is the acceleration of gravity signal that MEMS chip is exported in itself（I.e.
Sinusoidal signal）Have on the occasion of and negative value, to avoid distorted signals, so needing positive-negative power to power and need outside to apply 2
Reference voltage signal VREF1And VREF2, circuit is become complicated.Secondly, the operative orientation of MEMS chip is fixed, installed in biography
Inside sensor, the operative orientation of sensor can be changed by the setting angle for changing MEMS chip.As shown in Figures 2 and 3, it is short
Arrow represent the operative orientation of MEMS chip, long arrow represents the operative orientation of sensor, the operative orientation of sensor with
The operative orientation of MEMS chip is identical, can only change the operative orientation of sensor by changing the operative orientation of MEMS chip.
To sum up, there is following defect in existing this MEMS acceleration transducer signals modulate circuit:
1st, need positive-negative power to power and need 2 reference voltage signals of outside application, circuit is complicated, and component is more,
Cost increase, reliability reduction；
2nd, MEMS sensor requires small volume, and existing MEMS acceleration transducer signals modulate circuit component is more
Larger space can be taken, sensor bulk is larger, it is impossible to inside some narrow spaces, limit it and use；
3rd, its operative orientation can only be changed by changing the installation direction of MEMS chip, reduces MEMS chip installation
Flexibility；Mounting structure receives certain limitation when designing, and sometimes has to sacrifice the volume of sensor to meet work side
To requirement.
Utility model content
The purpose of this utility model is to provide a kind of MEMS acceleration transducer signals modulate circuit, its circuit components compared with
Few, small volume, cost is relatively low, and reliability is stronger, and improves the flexibility of MEMS chip installation, can reduce sensor body
Product, meets various application requirements.
To achieve these goals, the utility model is adopted the following technical scheme that：
A kind of MEMS acceleration transducer signals modulate circuit, including MEMS chip, instrument amplifier, gain resistor and electricity
Reference circuit is pressed, the signal output of MEMS chip terminates to the positive input or negative input of instrument amplifier, voltage base
The output of quasi- circuit terminates to the negative input or positive input of instrument amplifier, gain resistor access instrument amplifier
Gain resistor sets pin, the reference voltage pin ground connection of instrument amplifier.
The voltage reference circuit includes first resistor, second resistance and voltage follower, first resistor and second resistance
It is serially connected between power supply and ground, the node between first resistor and second resistance is connected to the positive input of voltage follower,
The output end of voltage follower is connected to the negative input of voltage follower.
After such scheme, MEMS acceleration transducer signals modulate circuit of the present utility model, with prior art phase
Than having the advantages that：
1st, in the utility model, the output voltage of voltage reference circuit（Reference offset voltage）Balance out the MEMS of a part
The DC offset voltage of chip, and the acceleration of gravity signal that MEMS chip is exported in itself is smaller, so as to ensure output
Signal all be on the occasion of, and eventually pass through amplifier amplification output signal also be on the occasion of, so can directly using single supply supply
Electricity（Positive supply is powered）, it is also not in distorted signals problem that no negative supply, which is powered,.Therefore, circuit components are less, volume compared with
Small, cost is relatively low, and reliability is stronger.
2nd, in the utility model, the positive input or negative sense that the signal output of MEMS chip terminates to instrument amplifier are defeated
Enter end, the output of voltage reference circuit terminates to the negative input or positive input of instrument amplifier, so that sensor
Operative orientation can be identical or opposite with the operative orientation of MEMS chip.The utility model can be accelerated by circuit flexible modulation
The operative orientation of sensor is spent, the installation direction without changing MEMS chip improves the flexibility of MEMS chip installation, can contracted
Small sensor bulk, meets various application requirements.
3rd, it is used only to balance out the direct current biasing of the MEMS chip of a part due to the output voltage of voltage reference circuit
Voltage, as long as the output voltage of voltage reference circuit is chosen proper remaining a part of voltage after then offsetting and amplified after amplification
G times（G is output signal multiplication factor, is determined by the resistance of gain resistor）Required output zero-point voltage value is can reach afterwards.
And the output sensitivity of MEMS chip in itself also passes through G times of amplification and reaches required Sensitirity va1ue, so as to reach synchronous amplification
Zero point and the effect of sensitivity.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of MEMS acceleration transducer signals modulate circuit in the prior art.
Fig. 2 is the relation schematic diagram of the installation direction of MEMS chip and its operative orientation in the prior art.
Fig. 3 is another relation schematic diagram of the installation direction of MEMS chip and its operative orientation in the prior art.
Fig. 4 is the circuit theory diagrams of the utility model embodiment one.
Fig. 5 is the circuit theory diagrams of the utility model embodiment two.
Fig. 6 is the relation schematic diagram of the installation direction and its operative orientation of MEMS chip in the utility model.
In Fig. 7 in the utility model voltage reference circuit circuit theory diagrams.
Embodiment
Embodiment one：
A kind of MEMS acceleration transducer signals modulate circuit of the present utility model, embodiment one as shown in figs. 4 and 7,
Including MEMS chip U1, instrument amplifier U2, gain resistor RG and voltage reference circuit, MEMS chip U1 signal output is terminated
To instrument amplifier U2 positive input, output end (the output reference bias voltage V of voltage reference circuitREF1) it is connected to instrument
Amplifier U2 negative input, and reference offset voltage VREF1Less than the DC offset voltage of MEMS chip, gain resistor RG
The gain resistor for accessing instrument amplifier U2 sets pin, instrument amplifier U2 reference voltage pin REF ground connection.
Voltage reference circuit includes first resistor R2, second resistance R3 and voltage follower U3, first resistor R2 and second
Resistance R3 is serially connected between power supply and ground, and the node between first resistor R2 and second resistance R3 is connected to voltage follower U3's
Positive input, voltage follower U3 output end is connected to voltage follower U3 negative input.As shown in fig. 7, benchmark
Bias voltage VREF1Produced, exported after voltage follower U3 by first resistor R2 and second resistance R3 partial pressures；Pass through regulation
First resistor R2 and second resistance R3 resistance can just adjust reference offset voltage VREF1。
In the present embodiment, the operative orientation of sensor is identical with the operative orientation of MEMS chip.
Operation principle is as follows：
MEMS chip U1 output voltage（VMEMS）Represented with equation below：
VMEMS=Z1+S1×A
Wherein, Z1For MEMS chip U1 DC offset voltage, S1For MEMS chip U1 sensitivity, A is MEMS chip U1
Acceleration；
Assuming that the target output voltage formula of sensor is as follows：
Vout= Z+S×A
Wherein, Z is the DC offset voltage of sensor, and S is the sensitivity of sensor
Can be by MEMS chip U1 sensitivity S by the resistance for adjusting gain resistor RG1S is amplified to, gain factor is such as
Under：
MEMS chip U1 DC offset voltage Z1Through reference offset voltage VREF1Put after offsetting part with same multiple G
Greatly, target bias voltage Z is obtained after amplification, formula is as follows：
(Z1-VREF1）×G=Z
According to selected MEMS chip U1 model and gain resistor RG resistance, you can learn Z1With G value, target
Bias voltage Z value is the bias voltage value with product sensor required in the technical protocol of client's signing, is given by client
The value gone out is defined, and is also known.So, just reference voltage value V can be obtained by calculatingREF1, formula is as follows：
VREF1=Z1-Z/G
Reference offset voltage V can just be adjusted by the resistance for adjusting first resistor R2 and second resistance R3REF1, set
VREF1Voltage reaches desired value, you can obtain required sensor characteristics.
Embodiment two：
A kind of MEMS acceleration transducer signals modulate circuit of the present utility model, embodiment two as shown in figure 5 and figure 7,
It differs only in the positive and negative different to the connected mode of input of instrument amplifier U2 from embodiment one, in the present embodiment,
MEMS chip U1 signal output terminates to instrument amplifier U2 negative input, the output end (output of voltage reference circuit
Reference offset voltage VREF1) it is connected to instrument amplifier U2 positive input, and reference offset voltage VREF1More than MEMS chip
DC offset voltage.
In the present embodiment, as shown in fig. 6, the operative orientation of sensor is opposite with the operative orientation of MEMS chip.
Operation principle is as follows：
MEMS chip U1 output voltage（VMEMS）Represented with equation below：
VMEMS=Z1+S1×A
Wherein, Z1For MEMS chip U1 DC offset voltage, S1For MEMS chip U1 sensitivity, A is MEMS chip U1
Acceleration；
Assuming that the target output voltage formula of sensor is as follows：
Vout= Z+S×A
Wherein, Z is the DC offset voltage of sensor, and S is the sensitivity of sensor
Can be by MEMS chip U1 sensitivity S by the resistance for adjusting gain resistor RG1S is amplified to, gain factor is such as
Under：
MEMS chip U1 DC offset voltage Z1Through reference offset voltage VREF1Put after offsetting part with same multiple G
Greatly, target bias voltage Z is obtained after amplification, formula is as follows：
(VREF1-Z1）×G=Z
According to selected MEMS chip U1 model and gain resistor RG resistance, you can learn Z1With G value, target
Bias voltage Z value is the bias voltage value with product sensor required in the technical protocol of client's signing, is given by client
The value gone out is defined, and is also known.So, just reference voltage value V can be obtained by calculatingREF1, formula is as follows：
VREF1=Z/G+Z1
Reference offset voltage V can just be adjusted by the resistance for adjusting first resistor R2 and second resistance R3REF1, set
VREF1Voltage reaches desired value, you can obtain required sensor characteristics.
Claims (2)
1. a kind of MEMS acceleration transducer signals modulate circuit, it is characterised in that：Including MEMS chip, instrument amplifier, increasing
Beneficial resistance and voltage reference circuit, the signal output of MEMS chip terminate to positive input or the negative sense input of instrument amplifier
End, the output of voltage reference circuit terminates to the negative input or positive input of instrument amplifier, gain resistor access instrument
The gain resistor of table amplifier sets pin, the reference voltage pin ground connection of instrument amplifier.
2. a kind of MEMS acceleration transducer signals modulate circuit according to claim 1, it is characterised in that：The voltage
Reference circuit includes first resistor, second resistance and voltage follower, and first resistor and second resistance are serially connected with power supply and ground
Between, the node between first resistor and second resistance is connected to the positive input of voltage follower, the output of voltage follower
End is connected to the negative input of voltage follower.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720107754.6U CN206470289U (en) | 2017-02-04 | 2017-02-04 | A kind of MEMS acceleration transducer signals modulate circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720107754.6U CN206470289U (en) | 2017-02-04 | 2017-02-04 | A kind of MEMS acceleration transducer signals modulate circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803682A (en) * | 2018-08-01 | 2018-11-13 | 歌尔股份有限公司 | Signal processing component and system |
| CN109668674A (en) * | 2019-02-26 | 2019-04-23 | 厦门乃尔电子有限公司 | A kind of high-precision temperature compensation circuit and method of silicon piezoresistance type pressure sensor |
| CN110763870A (en) * | 2019-11-06 | 2020-02-07 | 中国科学院地质与地球物理研究所 | MEMS sensor detection device and MEMS sensor system |
| CN113295184A (en) * | 2021-05-06 | 2021-08-24 | 厦门乃尔电子有限公司 | Calibration method of high-precision double-shaft tilt angle sensor |
-
2017
- 2017-02-04 CN CN201720107754.6U patent/CN206470289U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803682A (en) * | 2018-08-01 | 2018-11-13 | 歌尔股份有限公司 | Signal processing component and system |
| CN108803682B (en) * | 2018-08-01 | 2022-04-12 | 歌尔光学科技有限公司 | Signal processing assembly and system |
| CN109668674A (en) * | 2019-02-26 | 2019-04-23 | 厦门乃尔电子有限公司 | A kind of high-precision temperature compensation circuit and method of silicon piezoresistance type pressure sensor |
| CN109668674B (en) * | 2019-02-26 | 2023-10-03 | 厦门乃尔电子有限公司 | High-precision temperature compensation circuit and method for silicon piezoresistive pressure sensor |
| CN110763870A (en) * | 2019-11-06 | 2020-02-07 | 中国科学院地质与地球物理研究所 | MEMS sensor detection device and MEMS sensor system |
| CN110763870B (en) * | 2019-11-06 | 2020-10-16 | 中国科学院地质与地球物理研究所 | MEMS sensor detection device and MEMS sensor system |
| US11401160B2 (en) | 2019-11-06 | 2022-08-02 | Institute Of Geology And Geophysics Chinese Academy Of Sciences | MEMS sensor detection device and MEMS sensor system |
| CN113295184A (en) * | 2021-05-06 | 2021-08-24 | 厦门乃尔电子有限公司 | Calibration method of high-precision double-shaft tilt angle sensor |
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