CN206422087U - A kind of efficient broadband GaN base LED chip based on surface plasma bulk effect - Google Patents

Abstract

The utility model discloses a kind of efficient broadband GaN base LED chip based on surface plasma bulk effect.The efficient broadband GaN base LED chip is inverted structure, includes substrate, cushion, unintentional doped gan layer, n GaN layers, quantum well layer, electronic barrier layer, p GaN layers, metal mirror layer, passivation layer, p electrode layers, n electrode layers, p electrode holes and n electrode holes successively from the bottom to top；There are micron/nano composite metal structures at the surface of the bottom surface connection p GaN layers of the metal mirror layer.Micron metal structure includes the bossing and groove part being alternately present；Bossing is extended near SQW, realizes efficient SP MQW couplings；Groove part is covered in p GaN surfaces, p GaN layers is had enough thickness injection holes；Nanometer metal structure is distributed on micron metal structure and p GaN interface.

Description

A kind of efficient broadband GaN base LED chip based on surface plasma bulk effect

Technical field

The utility model is related to the GaN base LED chip field towards visible light communication, and in particular to one kind is based on surface etc. The efficient broadband GaN base LED chip of ion bulk effect.

Background technology

Visible light communication is used as signal source using the LED of high speed scintillation.When the LED frequencies flashed exceed the human eye response limit When, the signal source can be simultaneously as the light source in the fields such as illumination, display, backlight.With LED extensively should in above-mentioned field With having the LED chip of light source and the high-luminous-efficiency high modulation bandwidth of signal source function concurrently turns into study hotspot.

The modulation bandwidth of LED chip is mainly influenceed by active area minority carrier recombination life-span and RC bandwidth, wherein R, C The respectively equivalent resistance and equivalent capacity of chip.Existing document proposes to adulterate in the barrier layer of SQW so that space charge field Piezoelectric field can be shielded, the wave function coupling of enhancing electron-hole reduces the minority carrier recombination life-span.Also there are some researches show increase Plus hole concentration, reduction active layer thickness, increase injected current density can reduce the minority carrier recombination life-span.But these Method will all reduce the luminous efficiency of chip, and also need to change the structure and growth technique of epitaxial layer.Prepared from chip Angle, in order to improve LED modulation bandwidth, a kind of scheme is to reduce the efficient lighting area of chip.For example, using current limit Hole limits in the path of Injection Current within the specific limits, or prepares micro-dimension chip, so as to reduce equivalent capacity.This side Although case ensure that the luminous efficiency of chip, but be due to reduce efficient lighting area, reduce light power.

Surface plasma（SP）Technology can significantly increase the spontaneous emission rate of minority carrier, while increasing device Luminous efficiency and modulation bandwidth.LED chips are by electrode injection electronics and hole, and two kinds of carriers are in the compound generation of luminescent layer Exciton.A part of exciton energy passes through radiation transistion procedure transmission photon, and another part exciton energy is by lattice vibration, deep energy The nonradiative transition processes such as level impurity transition are depleted.If near SQW（SQW is in the range of SP evanescent fields） There is metallic film or particle, then the radiation transistion process of exciton, nonradiative transition process and SQW-SP coupling process are mutual Competition.When exciton frequency and SP resonance frequency matches when, exciton energy be coupled to SP patterns speed be much larger than other two Attenuation process is planted, so as to reduce the recombination lifetime of minority carrier, improve modulation bandwidth.

Utility model content

The GaN base LED chip that the utility model is directed to towards visible light communication is imitated there is provided one kind based on surface plasma The efficient broadband GaN base LED chip answered.

A kind of efficient broadband GaN base LED chip based on surface plasma bulk effect of the utility model, is in LED chip The surface of p-GaN layer prepare micron-nanometer composite metal structures.

The utility model is achieved through the following technical solutions.

A kind of efficient broadband GaN base LED chip based on surface plasma bulk effect, is inverted structure, from the bottom to top according to It is secondary including substrate, cushion, unintentional doped gan layer, n-GaN layers, quantum well layer, electronic barrier layer, p-GaN layer, metal it is anti- Penetrate mirror layer, passivation layer, p- electrode layers, n- electrode layers；Have at the surface of the bottom surface connection p-GaN layer of the metal mirror layer Micron-nanometer composite metal structures.

Further, the micron-nanometer composite metal structures include micron metal structure and nanometer metal structure；It is described The surface of p-GaN layer has the micron-nanometer composite construction complementary with micron-nanometer composite metal structures.

Further, the micron metal structure and nanometer metal structure are the projection and groove knot being alternately present Structure.

The internal diameter and depth of the raised external diameter of the micron metal structure and height and groove be both greater than surface etc. from The spread length of daughter, between 50nm ~ 5 μm.

Further, the nanometer metal structure is distributed on the interface of micron metal structure and p-GaN layer.

Further, the bossing of the micron metal structure is extended to apart from bottom 10nm ~ 1 μm of p-GaN layer Place, close to SQW（MQW）Layer, realizes efficient SP-MQW couplings；The groove part covering p-GaN layer of micron metal structure（7） Surface, make p-GaN layer that there is enough thickness injection holes.

Further, the projection and groove part of the micron metal structure are in spatially random distribution, one-dimensional light Grid be distributed or two-dimensional lattice distribution in one kind, raised shape and the concave shape of groove in cuboid, cylinder, round platform, One kind in prism or terrace with edge.

Further, the projection and groove part of the nanometer metal structure are in spatially random distribution, one-dimensional light Grid be distributed or two-dimensional lattice distribution in one kind, raised shape and the concave shape of groove in irregular shape, cuboid, One kind in cylinder, round platform, prism or terrace with edge.

Further, the nanometer metal structure and quantum well layer on the bossing of the micron metal structure（5）Away from From the penetration depth less than surface plasma in chip medium, between the nm of 10 nm ~ 200.

A kind of preparation of efficient broadband GaN base LED chip based on surface plasma bulk effect described in any of the above-described Method, comprises the following steps：

（1）Successively substrate superimposed layer prepare cushion, unintentional doped gan layer, n-GaN layers, quantum well layer, electronics resistance Barrier and smooth p-GaN layer；The mask arrangement that size is nanometer scale is prepared on the surface of smooth p-GaN layer；

（2）Smooth p-GaN layer is copied to by the nano-scale pattern etched the mask arrangement of nanometer scale Surface, is prepared into the p-GaN layer with nano-scale structure, and remove remaining mask material；

（3）The mask arrangement that size is the micron order of magnitude is prepared on the surface of the p-GaN layer with nano-scale structure；

（4）Copied to by the micron-scale pattern etched the mask arrangement of the micron order of magnitude with nano-scale structure P-GaN layer on, be prepared into the p-GaN layer that micron-nanometer composite construction is distributed with whole surface, and remove remaining mask Material；

（5）Metal mirror layer is prepared on the surface for the p-GaN layer that micron-nanometer composite construction is distributed with, and in metal P- electrode metals hole and n- electrode metals hole are distributed with mirror layer；

（6）At n- electrode metals hole, n-GaN layers are extended to by etching, n- electrode steps are formed；

（7）Passivation layer is prepared on the surface of metal mirror layer, and p- electrode dielectrics hole and n- are distributed with the passivation layer Electrode dielectric hole；

（8）P- electrode layers and n- electrode layers are prepared on the surface of passivation layer.

Further, step（1）、（2）、（3）、（4）In, it is nanometer number that size is prepared on the surface of smooth p-GaN layer After the mask arrangement of magnitude, directly the mask knot that size is the micron order of magnitude is prepared on the surface of the mask arrangement of nanometer scale Structure, by disposably etching, prepares the p-GaN layer with micron-nanometer composite construction, with micron-nanometer composite junction Do not have micrometer structure in the convex surfaces of the p-GaN layer of structure.

Further, step（1）、（2）、（3）、（4）In, first on the surface of smooth p-GaN layer, by etching micron The mask arrangement of the order of magnitude prepares the p-GaN layer with micron-scale structure；Again in the p-GaN layer with micron-scale structure Surface is prepared into the p- that micron-nanometer composite construction is distributed with whole surface by etching the mask arrangement of nanometer scale GaN layer.

Further, step（1）、（2）、（3）、（4）In, first on the surface of smooth p-GaN layer, by etching micron The mask arrangement of the order of magnitude prepares the p-GaN layer with micron-scale structure；Again in the p-GaN layer with micron-scale structure Surface prepares the mask arrangement that size is nanometer scale, directly prepares metal on the surface of the mask arrangement of nanometer scale anti- Penetrate mirror layer.

Further, the preparation of the mask arrangement of the nanometer scale comprises the following steps：

（1）Thin film is prepared on the surface of p-GaN layer；

（2）Photoetching technique and dry etching technology are used successively, and the pattern that size is nanometer scale is prepared on film, Obtain the mask arrangement of nanometer scale.

Further, step（1）In, the material of the film is SiO₂、SiN、Al₂O₃Or one kind in metal.

Further, step（2）In, the photoetching technique includes projection lithography technology, DUV lithography, swashed One kind in light interference lithography technology, nanometer embossing or electron beam lithography.

Further, step（2）In, the dry etching technology includes reactive ion etching, inductive couple plasma Body（ICP）One kind in etching or focused-ion-beam lithography.

It is preferred that, prepare nanometer on the surface of smooth p-GaN layer or the surface of p-GaN layer with micron-scale structure The mask arrangement of the order of magnitude, comprises the following steps：

（1）Size is added into solvent for the microballoon of nanometer scale, the microballoon that mass fraction is 0.5% ~ 10% is configured to molten Liquid, and make microballoon dispersed in the solution；

（2）Inwall by microspheres solution along container is slowly dropped in the tranquil deionized water of liquid level, is made on liquid level Microballoon spreads completely；Surfactant is added dropwise in liquid level so that microballoon forms the compact microballoon of the stable individual layer for swimming in liquid level Film；

（3）By smooth p-GaN layer or the p-GaN layer immersed in liquid level with micron-scale structure, after contact microballoon film, It is slow to be moved to microballoon film, and lifted upwards with 30-60 ° of angle so that microballoon film is from transferring to smooth p- The surface of GaN layer or the surface of p-GaN layer with micron-scale mechanism, then solvent is volatilized completely by standing.

It is furthermore preferred that step（1）In, the microballoon is polystyrene, SiO₂、Al₂O₃, metal or metal inner core-SiO₂Outside One kind in shell.

It is furthermore preferred that step（1）In, the solvent is one kind in deionized water, absolute ethyl alcohol or isopropanol.

It is furthermore preferred that step（1）In, the scattered method is one kind in ultrasonic vibration or magnetic agitation.

It is furthermore preferred that step（2）In, the surfactant be mass fraction be the % of 0.5 % ~ 10 dodecyl Metabisulfite solution, neopelex solution, dioctyl succinate disulfonate acid solution, sodium glycocholate solution or triethanolamine One kind in soap solution.

Compared with prior art, the utility model has the following advantages that and beneficial effect：

（1）The utility model efficient broadband GaN base LED chip is inverted structure, and inverted structure is conducive to improving chip work The current density of work；

（2）The bossing of micron metal structure extends to SQW（MQW）Near, realize efficient SP-MQW couplings；

（3）The groove part of micron metal structure makes p-GaN layer have enough thickness in the covering on the surface of p-GaN layer Degree injection hole；And physical dimension is the micron order of magnitude, shadow of the plasma damage to device performance in dry etch process is reduced Ring；

（4）Nanometer metal structure is distributed on micron metal structure and p-GaN interface；And physical dimension is nanometer number Magnitude, SP loss is smaller, and is conducive to the higher local SP of generation efficiency, further improves luminous efficiency and modulation band Width, compared with the GaN base LED chip without micron-nanometer composite construction, luminous efficiency can be improved up to 50%, and modulation bandwidth, which is improved, to be reached 75%。

Brief description of the drawings

Fig. 1 shows for a kind of structure of efficient broadband GaN base LED chip of the utility model based on surface plasma bulk effect It is intended to；

Fig. 1-1 is the schematic diagram for the mask arrangement that the size prepared in embodiment 1 is nanometer scale；

Fig. 1-2 is the schematic diagram of the p-GaN layer with nanostructured prepared in embodiment 1；

Fig. 1-3 is the schematic diagram for the mask arrangement that the size prepared in embodiment 1 is micron order of magnitude；

Fig. 1-4 is the schematic diagram of the p-GaN layer with micron-nanometer composite construction prepared in embodiment 1；

Fig. 1-5 is the schematic diagram of the metal mirror layer prepared in embodiment 1；

Fig. 1-6 is the schematic diagram of the n- electrode steps prepared in embodiment 1；

Fig. 1-7 is the schematic diagram of the passivation layer prepared in embodiment 1；

Fig. 1-8 is the p- electrode layers 10 prepared in embodiment 1 and the schematic diagram of n- electrode layers 11；

Fig. 2-1 is the schematic diagram for the mask arrangement that size prepared by embodiment 2 is nanometer scale；

Fig. 2-2 is the schematic diagram for the mask arrangement that size prepared by embodiment 2 is micron order of magnitude；

Fig. 2-3 is the schematic diagram of the p-GaN layer with micron-nanometer composite construction prepared by embodiment 2；

Fig. 2-4 is the schematic diagram of metal mirror layer prepared by embodiment 2；

Fig. 2-5 is the schematic diagram of n- electrode steps prepared by embodiment 2；

Fig. 2-6 is the schematic diagram of passivation layer prepared by embodiment 2；

Fig. 2-7 is the schematic diagram of p- electrode layers 10 prepared by embodiment 2 and n- electrode layers 11；

Fig. 3-1 is the schematic diagram for the mask arrangement that size prepared by embodiment 3 is micron order of magnitude；

Fig. 3-2 is the schematic diagram of the p-GaN layer with micrometer structure prepared by embodiment 3；

Fig. 3-3 is the schematic diagram for the mask arrangement that size prepared by embodiment 3 is nanometer scale；

Fig. 3-4 is the schematic diagram of the p-GaN layer with micron-nanometer composite construction prepared by embodiment 3；

Fig. 3-5 is the schematic diagram of metal mirror layer prepared by embodiment 3；

Fig. 3-6 is the schematic diagram of n- electrode steps prepared by embodiment 3；

Fig. 3-7 is the schematic diagram of passivation layer prepared by embodiment 3；

Fig. 3-8 is the schematic diagram of p- electrode layers 10 prepared by embodiment 3 and n- electrode layers 11；

Fig. 4-1 is the schematic diagram for the mask arrangement that size prepared by embodiment 4 is micron order of magnitude；

Fig. 4-2 is the schematic diagram of the p-GaN layer with micrometer structure prepared by embodiment 4；

Fig. 4-3 is the schematic diagram for the mask arrangement that size prepared by embodiment 4 is nanometer scale；

Fig. 4-4 is the schematic diagram of metal mirror layer prepared by embodiment 4；

Fig. 4-5 is the schematic diagram of n- electrode steps prepared by embodiment 4；

Fig. 4-6 is the schematic diagram of passivation layer prepared by embodiment 4；

Fig. 4-7 is the schematic diagram of p- electrode layers 10 prepared by embodiment 4 and n- electrode layers 11.

Embodiment

Specific implementation of the present utility model is described further below in conjunction with accompanying drawing, but implementation of the present utility model and guarantor Protect scope not limited to this.

As shown in figure 1, the one of the efficient broadband GaN base LED chip based on surface plasma bulk effect that is the utility model Kind, it is inverted structure, includes substrate 1, cushion 2, unintentional doped gan layer 3, n-GaN layers 4, SQW successively from the bottom to top Layer 5, electronic barrier layer 6, p-GaN layer 7, metal mirror layer 8, passivation layer 9, p- electrode layers 10, n- electrode layers 11；Metallic reflection There are micron-nanometer composite metal structures at the surface of the bottom surface connection p-GaN layer 7 of mirror layer 8；

Micron-nanometer composite metal structures include micron metal structure and nanometer metal structure；Micron metal structure and receive Rice metal structure is the projection and groove structure being alternately present, and nanometer metal structure is distributed in micron metal structure and p-GaN On the interface of layer 7；

The surface of p-GaN layer 7 has the structure complementary with micron-nanometer composite metal structures；Micron metal structure it is convex Rise and extend partially at bottom 10nm ~ 1 μm of p-GaN layer 7, close to quantum well layer 5, the groove part of micron metal structure Cover the surface of p-GaN layer 7；

The projection and groove part of micron metal structure are spatially in random distribution, one-dimensional grating distribution or two-dimensional lattice One kind in distribution, raised shape and the concave shape of groove are in one in cuboid, cylinder, round platform, prism or terrace with edge Kind；

The projection and groove part of nanometer metal structure are spatially in random distribution, one-dimensional grating distribution or two-dimensional lattice One kind in distribution, raised shape and the concave shape of groove in irregular shape, cuboid, cylinder, round platform, prism or One kind in terrace with edge；

The raised external diameter of micron metal structure and the internal diameter and depth of height and groove are both greater than surface plasma Spread length, between 50nm ~ 5 μm；Nanometer metal structure on micron metal structure bossing and quantum well layer 5 away from From the penetration depth less than surface plasma in chip medium, between the nm of 10 nm ~ 200.

Embodiment 1

A kind of efficient broadband GaN base LED chip based on surface plasma bulk effect, structure is as shown in figures 1-8.

Being prepared on the p-GaN of inverted structure LED chip surface has micron-nanometer composite construction；Micrometer structure is triangle The round platform of lattice distribution, lattice constant is 2 μm, and bottom diameter is 1.3 μm on round platform, and bottom diameter is 1 μm.Nanostructured is point The cylinder that hexagonal lattice of the cloth on whole p-GaN surfaces is distributed, lattice constant is 100 nm, and the height and diameter of cylinder are all 50 Nm, positioned at the nm of top 10 of the distance from bottom SQW 5 of the cylinder of micrometer structure recess；It is anti-that metal is prepared in p-GaN layer 7 Mirror layer 8 is penetrated, micron-nanometer composite metal structures are formed.

A kind of above-mentioned efficient broadband GaN base LED chip based on surface plasma bulk effect is prepared, preparation process figure is as schemed Shown in 1-1 to Fig. 1-8, step is as follows：

（1）Successively on substrate 1 lamination prepare cushion 2, unintentional doped gan layer 3, n-GaN layers 4, quantum well layer 5, Electronic barrier layer 6 and smooth p-GaN layer 7；Use plasma reinforced chemical vapour deposition method（PECVD）In p-GaN layers 7 Surface prepares the SiO of 50 nm thickness₂Layer.

（2）Use nanometer embossing and sense coupling（ICP）Technology, using nano impression glue to cover Mould, by SiO₂It is nanometer scale mask arrangement 70 that layer, which is prepared into the cylinder of hexagonal lattice distribution, i.e. size, and lattice constant is 100 nm, the height of cylinder is 50 nm, and diameter is 50 nm, as Figure 1-1.

（3）Using ICP lithographic techniques, with SiO₂Nano-pattern is mask arrangement, and it is brilliant to prepare hexagonal on the surface of p-GaN layer 7 The cylinder of lattice distribution, lattice constant is 100 nm, and the height of cylinder is 50 nm, and diameter is 50 nm, and being made has SiO₂Nanometer circle The p-GaN layer 71 of rod structure, as shown in Figure 1-2.

（4）Using projection lithography technology, the cylinder of triangular crystal lattice distribution is prepared on a photoresist, lattice constant is 2 μ M, body diameter is 1 μm, and the photoresist mask arrangement 72 that size is the micron order of magnitude is prepared on the surface of p-GaN layer 71, is such as schemed Shown in 1-3.

（5）Using ICP lithographic techniques, etching mask structure 72 prepares the circle of triangular crystal lattice distribution on p-GaN layer surface Platform, lattice constant is 2 μm, and bottom diameter is 1.3 μm on round platform, and bottom diameter is 1 μm, the distance from bottom SQW 5 of bottom The nm of top 10, is prepared into the p-GaN layer 73 with micron-nanometer composite construction, and micron-nanometer composite construction is distributed in p- In the whole surface of GaN layer 73, as Figure 1-4.

（6）Ni/Ag/Cr is prepared using metal lift-off techniques and electron beam evaporation technique（1nm/100nm/100nm）Metal Mirror layer 8, forms micron-nanometer composite metal structures, in metal on metal mirror layer 8 and the interface of p-GaN layer 7 P- electrode metals hole 81 and n- electrode metals hole 82, and the distance from bottom quantum of nanometer metal structure are distributed with mirror layer 8 The nm of top 10 of trap 5, as Figure 1-5.

（7）Using general ultraviolet photoetching technique and ICP lithographic techniques, n- electrode steps are formed at n- electrode metals hole 82 91, n- electrode steps 91 extend to n-GaN layers 4, as shown in figures 1 to 6；

（8）Use PECVD, general ultraviolet photoetching technique and reactive ion etching（RIE）Technology is in metal mirror layer 8 Surface prepares SiO₂Passivation layer 9, and p- electrode holes 92 and n- electrode holes 93 is distributed with passivation layer 9, as shown in figs. 1-7；

（9）Using metal lift-off techniques and electron beam evaporation technique Cr/Au is prepared on the surface of passivation layer 9（100nm/200 nm）P- electrode layers 10 and n- electrode layers 11, as shown in figures 1-8.

The efficient broadband GaN base LED chip based on surface plasma bulk effect is obtained, the chip can produce efficient office Domain SP, and SP losses are small.

Embodiment 2

A kind of efficient broadband GaN base LED chip based on surface plasma bulk effect, structure is as illustrated in figs. 2-7.

Being prepared on the p-GaN of inverted structure LED chip surface has micron-nanometer composite construction；Micrometer structure is one-dimensional Grating, lattice constant is 3 μm, and bottom diameter is 1.8 μm on grating hole, and bottom diameter is 1.5 μm, is gone to the bottom apart from SQW 5 The nm of top 30；Nanostructured is located at the bottom of micrometer structure recess, is the irregular structure of random distribution, irregular structure Height and width are 50nm, and the gap of irregular structure is 200nm；Metal mirror layer 8 is prepared in p-GaN layer 7, is formed micro- Rice-nano composite structure.

Prepare a kind of above-mentioned efficient broadband GaN base LED chip based on surface plasma bulk effect, preparation process such as Fig. 2- Shown in 1 to Fig. 2-7, step is as follows：

（1）Successively on substrate 1 lamination prepare cushion 2, unintentional doped gan layer 3, n-GaN layers 4, quantum well layer 5, Electronic barrier layer 6 and smooth p-GaN layer 7；The nickel that a layer thickness is 2nm is prepared on the surface of p-GaN layer 7 using magnetron sputtering Metallic film；Rapid thermal annealing is carried out to sample, heating rate is 20 DEG C/s, thin nickel metal film is agglomerated into nickel metal Particle, the height and width of particle are 50nm, and gap is 200nm, i.e., size is the mask arrangement 70 of nanometer scale, such as Fig. 2- Shown in 1；

（2）Photoresist is applied on the surface of mask arrangement 70 using spraying technology, by laser interference photolithography technology in light One-dimensional grating structure is prepared in photoresist, lattice constant is 3 μm, and bottom diameter is 1.8 μm on grating hole, bottom diameter is 1.5 μ M, i.e. size are the mask arrangement 72 of the micron order of magnitude, as shown in Fig. 2-2；

（3）The composition of mask arrangement 72 that size is the mask arrangement 70 of nanometer scale and size is micron order of magnitude is compound Mask arrangement, copies to p-GaN layer 7 by the pattern of Composite masking structures by ICP etchings, is prepared into multiple with micron-nanometer The p-GaN layer 73 of structure is closed, nanostructured is distributed on the groove of p-GaN layer 73, the height and width of nanostructured be 50nm, Gap is 200nm, and the nm of top 30 of the distance from bottom SQW of nanostructured, as Figure 2-3；

（4）Cr/Al/Ti is prepared using electron beam evaporation technique（2nm/800nm/50nm）Metal mirror layer 8, in metal Form micron-nanometer composite metal structures on the interface of mirror layer 8 and p-GaN layer 7, and nanometer metal structure bottom away from From the nm of top 30 of SQW；Using general ultraviolet photoetching technique and chemical wet etching technology, in metal mirror layer 8 P- electrode metals hole 81 and n- electrode metals hole 82 are prepared, as in Figure 2-4；

（5）Using general ultraviolet photoetching technique and ICP lithographic techniques, n- electrode steps are formed at n- electrode metals hole 82 91, n- electrode steps 91 extend to n-GaN layers 4, as shown in Figure 2-5；

（6）Use PECVD, general ultraviolet photoetching technique and reactive ion etching（RIE）Technology is in metal mirror layer 8 Surface prepares SiN passivation layers 9, and p- electrode holes 92 and n- electrode holes 93 is distributed with passivation layer 9, as shown in figures 2-6；

（7）Using metal lift-off techniques and electron beam evaporation technique Ti/Au is prepared on the surface of passivation layer 9（50nm/100 nm）P- electrode layers 10 and n- electrode layers 11, as illustrated in figs. 2-7.

The efficient broadband GaN base LED chip based on surface plasma bulk effect is obtained, the chip can produce efficient office Domain SP, and SP losses are small.

Embodiment 3

A kind of efficient broadband GaN base LED chip based on surface plasma bulk effect, structure is as shown in figures 3-8.

Being prepared on the p-GaN of inverted structure LED chip surface has micron-nanometer composite construction.Micrometer structure is hexagonal The cuboid of lattice distribution, lattice constant is 4 μm, and the cuboid length of side is 2 μm.Nanostructured is distributed across whole p-GaN tables The round platform of the triangular crystal lattice distribution in face, lattice constant is 250 nm, and the height and diameter of round platform are all 125nm, positioned at micrometer structure The nm of top 40 of the distance from bottom SQW 5 of the round platform of recess.Metal mirror layer 8 is prepared in p-GaN layer 7, is formed micro- Rice-nano composite structure.

A kind of above-mentioned efficient broadband GaN base LED chip based on surface plasma bulk effect is prepared, preparation process figure is as schemed Shown in 3-1 to Fig. 3-8, preparation process is as follows：

（1）Successively on substrate 1 lamination prepare cushion 2, unintentional doped gan layer 3, n-GaN layers 4, quantum well layer 5, Electronic barrier layer 6 and smooth p-GaN layer 7；Using general ultraviolet photoetching technique, hexagonal lattice distribution is prepared on a photoresist Cuboid, i.e. size are the mask arrangement 72 of the micron order of magnitude, and lattice constant is 4 μm, and the cuboid length of side is 2 μm, such as Fig. 3-1 It is shown；

（2）Using ICP lithographic techniques, using photoresist as mask, the length of hexagonal lattice distribution is prepared on the surface of p-GaN layer 7 Cube, lattice constant is 4 μm, and the cuboid length of side is 2 μm, is prepared into the p-GaN layer 74 with micron-scale structure, such as Fig. 3- Shown in 2；

（3）Using electron beam lithography, triangular crystal lattice is prepared on the surface of the p-GaN layer 74 with micron-scale structure The round platform of distribution, lattice constant is 250 nm, and the height and diameter of round platform are 125nm, i.e. the mask arrangement 70 of nanometer scale, As shown in Fig. 3-3；

（4）The composition of mask arrangement 72 that size is the mask arrangement 70 of nanometer scale and size is micron order of magnitude is compound Mask arrangement, using ICP lithographic techniques, p-GaN layer 74 is copied to by the pattern of Composite masking structures, be prepared into micron- The p-GaN layer 73 of nano composite structure, and micron-nanometer composite construction is distributed in the whole surface of p-GaN layer 73；Nano junction Structure is the cylinder of hexagonal lattice distribution, and lattice constant is 250 nm, and the height and diameter of round platform are all 125nm, positioned at micrometer structure The nm of top 40 of the distance from bottom SQW 5 of the round platform of recess, as shown in Figure 3-4；

（5）Ti/Ag/Ni is prepared using metal lift-off techniques and electron beam evaporation technique（4nm/150 nm/100nm）Metal Mirror layer 8, forms micron-nanometer composite metal structures, in metal on metal mirror layer 8 and the interface of p-GaN layer 7 P- electrode metals hole 81 and n- electrode metals hole 82, and the distance from bottom quantum of nanometer metal structure are distributed with mirror layer 8 The nm of top 50 of trap, as in Figure 3-5；

（6）Using general ultraviolet photoetching technique and ICP lithographic techniques, n- electrode steps are formed at n- electrode metals hole 82 91, and n- electrode steps 91 extend to n-GaN layers 4, as seen in figures 3-6；

（7）Use PECVD, general ultraviolet photoetching technique and reactive ion etching（RIE）Technology is in metal mirror layer 8 Surface prepares SiO₂Passivation layer 9, and p- electrode holes 92 and n- electrode holes 93 is distributed with passivation layer 9, as shown in fig. 3 to 7；

（8）Using metal lift-off techniques and electron beam evaporation technique Ni/Au is prepared on the surface of passivation layer 9（100nm/400 nm）P- electrode layers 10 and n- electrode layers 11, as shown in figures 3-8.

The efficient broadband GaN base LED chip based on surface plasma bulk effect is obtained, the chip can produce efficient office Domain SP, and SP losses are small.

Embodiment 4

A kind of efficient broadband GaN base LED chip based on surface plasma bulk effect, structure is as shown in figs. 4-7.

Being prepared on the p-GaN of inverted structure LED chip surface has micron-nanometer composite construction.Micrometer structure is corner Six terrace with edge holes of lattice distribution, lattice constant is 6 μm, and terrace with edge hole upper bottom edge length is 2.5 μm, and the bottom length of side is 2.2 μ M, goes to the bottom apart from the nm of top 50 of SQW.Nanostructured is distributed across the compact arranged individual layer SiO on whole p-GaN surfaces₂ Microballoon, microsphere diameter is 300 nm.In SiO₂Metal mirror layer is prepared on microballoon, micron-nanometer composite metal structures are formed.

A kind of above-mentioned efficient broadband GaN base LED chip based on surface plasma bulk effect is prepared, preparation process figure is as schemed Shown in 4-1 to Fig. 4-7, preparation process is as follows：

（1）Successively on substrate 1 lamination prepare cushion 2, unintentional doped gan layer 3, n-GaN layers 4, quantum well layer 5, Electronic barrier layer 6 and smooth p-GaN layer 7；Using general ultraviolet photoetching technique, tetragonal lattice distribution is prepared on a photoresist Six terrace with edge holes, i.e. size are the mask arrangement 72 of the micron order of magnitude, and lattice constant is 6 μm, and the terrace with edge length of side is 2.2 μm, such as Shown in Fig. 4-1.

（2）Using ICP lithographic techniques, using photoresist as mask, the six of tetragonal lattice distribution are prepared on the surface of p-GaN layer 7 Terrace with edge hole, lattice constant is 6 μm, and terrace with edge hole upper bottom edge length is 2.5 μm, and the bottom length of side is 2.2 μm, distance measurements of going to the bottom The nm of top 50 of sub- trap, is prepared into the p-GaN layer 74 with micron-scale structure, as shown in the Fig. 4-2.

（3）By a diameter of 450nm SiO₂Microballoon adds absolute ethyl alcohol, is configured to the solution that mass fraction is 2.5%, and Ultrasonic vibration makes microballoon dispersed in the solution in 30 minutes.

（4）Deionized water is added in a reservoir, after liquid level is tranquil, is drawn inwall of the microspheres solution along container and is slowly dripped Plus, the microballoon on liquid level is spread completely.

（5）The sodium dodecyl sulfate solution that mass fraction is 2% is added dropwise in the appropriate location of liquid level, reduces the table of the water surface Face tension force so that SiO₂Microballoon forms the compact microballoon film of the stable individual layer for swimming in liquid level.

（6）Dip the substrate into after liquid level, contact microballoon film, slowly moved to microballoon film, and angularly above carried with 45 degree Draw so that microballoon film from transferring to substrate on.

（7）Substrate is stood into 2 hours causes solvent to volatilize completely, and it is compact arranged to form individual layer on the surface of p-GaN layer 7 SiO₂Microballoon.

（8）Use CHF₃RIE etchings are carried out with SF6 gases, by SiO₂The lateral dimension of microballoon is decreased to 300 nm, in p- The surface of GaN layer forms the SiO of triangular crystal lattice distribution₂Microballoon, lattice constant is 450nm, and wide is that 300 nm, i.e. size are nanometer The mask arrangement 70 of the order of magnitude, as shown in Fig. 4-3.

（9）Cr/Al/Cr is prepared using metal lift-off techniques and electron beam evaporation technique（0.5nm/200 nm/50nm）Gold Belong to mirror layer 8, micron-nanometer composite metal structures are formed on metal mirror layer 8 and the interface of p-GaN layer 7, in gold P- electrode metals hole 81 and n- electrode metals hole 82, and the distance from bottom amount of nanometer metal structure is distributed with category mirror layer 8 The nm of top 50 of sub- trap, as shown in Fig. 4-4.

（10）Using general ultraviolet photoetching technique and ICP lithographic techniques, n- electrode steps are formed at n- electrode metals hole 2 91, and n- electrode steps 91 extend to n-GaN layers 4, as illustrated in figures 4-5.

（11）Use PECVD, general ultraviolet photoetching technique and reactive ion etching（RIE）Technology is in metal mirror layer 8 Surface prepare SiN passivation layers 9, and p- electrode holes 92 and n- electrode holes 93 is distributed with passivation layer 9, as Figure 4-Figure 6；

（12）Using metal lift-off techniques and electron beam evaporation technique Cr/Au is prepared on the surface of passivation layer 9（50nm/500 nm）P- electrode layers 10 and n- electrode layers 11, as shown in figs. 4-7.

The efficient broadband GaN base LED chip based on surface plasma bulk effect is obtained, the chip can produce efficient office Domain SP, and SP losses are small.

Claims (4)

1. a kind of efficient broadband GaN base LED chip based on surface plasma bulk effect, it is characterised in that efficient broadband GaN Base LED chip is inverted structure, includes substrate successively from the bottom to top（1）, cushion（2）, unintentional doped gan layer（3）、n- GaN layer（4）, quantum well layer（5）, electronic barrier layer（6）, p-GaN layer（7）, metal mirror layer（8）, passivation layer（9）, p- electricity Pole layer（10）, n- electrode layers（11）；The metal mirror layer（8）Bottom surface and p-GaN layer（7）Surface contact position of sillar test specimen have Micron-nanometer composite metal structures.

2. a kind of efficient broadband GaN base LED chip based on surface plasma bulk effect according to claim 1, it is special Levy and be, the micron-nanometer composite metal structures include micron metal structure and nanometer metal structure；The micron metal knot Structure and nanometer metal structure are the projection and groove structure being alternately present, and the nanometer metal structure is distributed in micron metal knot Structure and p-GaN layer（7）Interface on；The p-GaN layer（7）Surface have and micron-nanometer composite metal structures are complementary Micron-nanometer composite construction；The bossing of the micron metal structure is extended to apart from p-GaN layer（7）Bottom 10nm ~ At 1 μm, close to quantum well layer（5）, the groove part covering p-GaN layer of micron metal structure（7）Surface.

3. a kind of efficient broadband GaN base LED chip based on surface plasma bulk effect according to claim 2, it is special Levy and be, the projection and groove part of the micron metal structure are spatially in random distribution, one-dimensional grating distribution or two dimension One kind in dot matrix distribution, raised shape and the concave shape of groove are in cuboid, cylinder, round platform, prism or terrace with edge One kind；The projection and groove part of the nanometer metal structure are spatially in random distribution, one-dimensional grating distribution or two dimension One kind in dot matrix distribution, raised shape and the concave shape of groove are in irregular shape, cuboid, cylinder, round platform, rib One kind in post or terrace with edge.

4. a kind of efficient broadband GaN base LED chip based on surface plasma bulk effect according to claim 2, it is special Levy and be, the raised external diameter of the micron metal structure and the internal diameter and depth of height and groove are both greater than surface plasma The spread length of body, between 50nm ~ 5 μm；Nanometer metal structure and quantum on the bossing of the micron metal structure Well layer（5）Distance be less than penetration depth of the surface plasma in chip medium, between the nm of 10 nm ~ 200.