CN206401481U - A kind of high temperature superconduction wave filter - Google Patents
A kind of high temperature superconduction wave filter Download PDFInfo
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- CN206401481U CN206401481U CN201621249978.2U CN201621249978U CN206401481U CN 206401481 U CN206401481 U CN 206401481U CN 201621249978 U CN201621249978 U CN 201621249978U CN 206401481 U CN206401481 U CN 206401481U
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Abstract
The utility model discloses a kind of high temperature superconduction wave filter, including input micro-strip, output micro-strip and micro-strip resonantor battle array；The micro-strip resonantor battle array includes more than 2 resonators being arranged parallel to each other；Each resonator is the resonator that finger-cross structure and fractal structure are combined, and wherein finger-cross structure forms the openend of the resonator, and fractal structure forms the closed end of the resonator；Leave certain gap between every 2 adjacent resonators, and both closed end and openend position it is interlaced；Input micro-strip and occur incentive relationship with first resonator in micro-strip resonantor battle array, with last resonator in micro-strip resonantor battle array incentive relationship occurs for output micro-strip.The utility model has the characteristics of miniaturization and stronger second harmonic suppress.
Description
Technical field
The utility model is related to microwave passive component technical field, and in particular to a kind of high temperature superconduction wave filter.
Background technology
The fast development of communications industry, requirement more and more higher of the people to wave filter, generally with low-loss, low noise, height
Frequency selectivity, small volume, lightweight etc. are design object, so as to increase the difficulty of wave filter design.And high temperature superconductor technology
It is in the high-tech technology that fast development is got up in recent years, due to the micro-strip filtering being fabricated to using high-temperature superconducting thin film
Device, with advantages such as minimum noise coefficient, extremely low insertion loss, high selectivity and small and lights, increasingly by
The concern of people.Compared with Conventional filters, high temperature superconduction wave filter is because with sensitivity height, strong antijamming capability and small volume
The characteristics of, the technological challenge in various dual-use fields can be more tackled, with boundless application prospect.
High temperature superconduction wave filter circuit design uses 1/2nd wave resonator coupled structures, this design mostly
Typically it all can produce resonant frequency at two frequencys multiplication of wave filter working frequency and form parasitic passband, have a strong impact on wave filter
Stopband rejection.Therefore, many scholars are directed to carrying out the research for suppressing parasitic passband.Wherein have by using increase transmission
Zero point improves the damped system at frequency multiplication, but the bandwidth relative narrower suppressed using transmission zero, the suppression to frequency multiplication passband
It is often undesirable, and add the complexity of wave filter design；(DGS) structure is filtered the suppression of device harmonic wave with having utilization defect
The method of system, but need to carry out two-sided processing to microstrip filter circuit, add technology difficulty；Also have by handing over finger-cross structure
Resonator terminal loads electric capacity is realized, the parasitic passband at the frequency multiplication of wave filter two is effectively inhibited, but wave filter volume is larger, no
Beneficial to the miniaturization of device.
Utility model content
The utility model provides a kind of high temperature superconduction wave filter, and it combines the advantage of finger-cross structure and fractal structure, has
The characteristics of miniaturization and stronger second harmonic suppress.
To solve the above problems, the utility model is achieved through the following technical solutions：
A kind of high temperature superconduction wave filter, including input micro-strip, output micro-strip and micro-strip resonantor battle array；The micro-strip resonantor
Battle array includes more than 2 resonators being arranged parallel to each other；Each resonator is that finger-cross structure and fractal structure are combined
Resonator, wherein finger-cross structure form the openend of the resonator, and fractal structure forms the closed end of the resonator；Every 2 phases
Leave certain gap between adjacent resonator, and both closed end and openend position it is interlaced；Input micro-strip with
Incentive relationship occurs for first resonator in micro-strip resonantor battle array, and last in output micro-strip and micro-strip resonantor gust is humorous
Incentive relationship occurs for the device that shakes.
In such scheme, fractal structure is Hirbert fractal structures or the quasi- fractal structure based on Hirbert.
In such scheme, the iterations K of fractal structure is between 2~4.
In such scheme, finger-cross structure is made up of a plurality of slotting minor matters that refer to that are parallel to each other；Between every 2 adjacent slotting finger minor matters
Leave certain gap；The sensing of every 2 adjacent slotting finger minor matters is interlaced to inserting, i.e., it is micro- that one slotting finger minor matters point to input
Band side, another, which is inserted, refers to minor matters sensing output micro-strip side.
In such scheme, the bar number of the slotting finger minor matters of finger-cross structure is more than 10.
In such scheme, the line width Wd of each resonator is consistent.
In such scheme, provided with one section of micro-strip bar between every 2 adjacent resonators.
In such scheme, the distance between every 2 adjacent resonators from micro-strip resonantor battle array centre to both sides gradually
Increase.
In such scheme, with first resonator in micro-strip resonantor battle array incentive relationship to occur for input micro-strip directly swash
Encourage or indirect excitation.
In such scheme, it is direct that with last resonator in micro-strip resonantor battle array incentive relationship, which occurs, for output micro-strip
Excitation or indirect excitation.
Compared with prior art, the utility model has following features：
1st, by introducing finger-cross structure and fractal structure in half-wavelength hairpin resonator, make in micro-strip resonantor battle array
Each resonator is provided simultaneously with the advantage of both structures, so as to realize the mesh that wave filter miniaturization and second harmonic suppress
's；
2nd, not only second harmonic rejection ability is stronger, the second harmonic of wave filter can be suppressed outside frequency tripling, and
And it is smaller than the volume of general hair clip mode filter, the requirement that system is designed wave filter can be met completely；
3rd, with flexible design, compact conformation, it is easy to the characteristics of integrated is adapted to the high-temperature superconducting thin film of high quality factor
Make.
Brief description of the drawings
Fig. 1 is a kind of structural representation of high temperature superconduction wave filter.
Fig. 2 is the design origin of the resonator structure of high temperature superconduction wave filter.
Fig. 3 is the fractal structure schematic diagram of resonator.(a1) it is Hirbert fractal structures when iterations is K=1；
(a2) it is Hirbert fractal structures when iterations is K=2；(a3) it is Hirbert points of shape knot when iterations is K=3
Structure；(b1) it is quasi- fractal structures of Hirbert when iterations is K=1；(b2) it is Hirbert when iterations is K=2
Quasi- fractal structure；(b3) it is quasi- fractal structures of Hirbert when iterations is K=3.
Fig. 4 is Fig. 1 high temperature superconduction wave filter frequency response curve.
Label in figure：1st, micro-strip is inputted；2nd, micro-strip is exported；3rd, micro-strip resonantor battle array；31st, resonator；311st, finger-cross structure；
312nd, fractal structure.
Embodiment
The utility model is described in further detail below in conjunction with the accompanying drawings.
A kind of high temperature superconduction wave filter, as shown in figure 1, including input micro-strip 1, output micro-strip 2 and micro-strip resonantor battle array 3.
High-temperature superconducting thin film material used in micro-strip resonantor battle array 3 is dysprosium barium copper oxygen (DBCO), and backing material is 2 English of 0.5mm thickness
Very little magnesia (MgO), its dielectric constant is 9.74.The micro-strip resonantor battle array 3 includes more than 2 resonators 31, resonator 31
Coupled by the arrangement of sequentially staggered parallel.The number of resonator 31 is selected by the design requirement of wave filter, its number
Both can be odd number or even number.In the utility model preferred embodiment, the number of resonator 31 is 8, constitutes one
The generalized chebyshev bandpass filter of individual 8 rank.
Each resonator 31 is the resonator 31 that finger-cross structure 311 and fractal structure 312 are combined.Each resonator
31 shape is by traditional hairpin-shaped half-wave resonator 31 is developed.Tied provided with finger is inserted the openend of the resonator 31
The openend of structure 311, i.e. finger-cross structure 311 the formation resonator 31.The closed end of the hair clip shape resonator 31 is provided with a point shape knot
The closed end of structure 312, i.e. fractal structure 312 the formation resonator 31.Referring to Fig. 2.Fractal structure 312 is applied to wave filter,
So that wave filter has the characteristics of compactedness is high to be suppressed with second harmonic；And refer to branch by introducing to insert in half-wave resonator 31
Section, it is possible to achieve the loading of the Terminal Capacitance of resonator 31, and because the electric capacity increase of resonator 31 causes frequency to reduce, so resonance
When device 31 is operated in fundamental frequency, the equivalent capacity increase of the resonator 31, frequency can reduce, and when two frequencys multiplication, should
The equivalent capacity of resonator 31 reduces, and frequency can increase, so as to add the bandwidth between the fundamental frequency of resonator 31 and two frequencys multiplication
Degree, finally realizes the purpose that wave filter second harmonic suppresses.In the utility model preferred embodiment, for single resonator 31
For, its either part of finger-cross structure 311, or the line width Wd of the part of fractal structure 312 are consistent all the time.It is every by regulation
The individual side wall Wa of resonator 31 micro-strip line length, so as to change the resonant frequency of resonator 31, makes its resonance in corresponding passband
Centre frequency at.
Above-mentioned finger-cross structure 311 is parallel to each other by a plurality of and slotting slotting finger minor matters is constituted.Every 2 adjacent slotting finger minor matters
Between spacing width it is identical, and insert refer to minor matters width Wc can be identical with the micro belt line width Wd of resonator 31, can also
It is different.In the utility model preferred embodiment, hand over finger-cross structure 311 in interpolation minor matters line width Wc both with neighbor interpolation minor matters
Spacing width Ws it is equal and also identical with the micro belt line width Wd of resonator 31.The bar number of the slotting finger minor matters of finger-cross structure 311
Selected according to the design requirement of wave filter, the general bar number for inserting finger minor matters is more, and second harmonic suppresses better.In this practicality
In new, the bar number of the slotting finger minor matters of finger-cross structure 311 is more than 10.In the utility model preferred embodiment, insert and refer to knot
The bar number of the slotting finger minor matters of structure 311 is 10.
Above-mentioned fractal structure 312 is Hirbert fractal structures 312 or the quasi- fractal structure 312 based on Hirbert.Divide shape
The iterations K of structure 312 is selected according to the design requirement of wave filter, the iterations K minimum 2 of fractal structure 312
It is secondary, it is the number of times for meeting the insertion loss that design can bear to the maximum, so can just makes the effect that resonator 31 is minimized more
Substantially.In the utility model, the iterations K of fractal structure 312 is between 2~4.In the utility model preferred embodiment
In, the iterations K of fractal structure 312 is 2.Referring to Fig. 3, wherein the Hirbert points of shape that (a1) is iterations when being K=1
Structure；(a2) it is Hirbert fractal structures when iterations is K=2；(a3) it is Hirbert when iterations is K=3
Fractal structure；(b1) it is quasi- fractal structures of Hirbert when iterations is K=1；(b2) it is when iterations is K=2
The quasi- fractal structures of Hirbert；(b3) it is quasi- fractal structures of Hirbert when iterations is K=3.
For whole micro-strip resonantor battle array 3, the shape and size of each resonator 31 are identical.So-called shape one
Cause, the part of finger-cross structure 311 for referring not only to each resonator 31 is consistent, such as insert and refer to the bar number of minor matters, insert the length for referring to minor matters
Degree inserts spacing of finger minor matters etc. unanimously；And refer to that the part of fractal structure 312 is also consistent, such as fractal structure 312 the characteristics of or
Iterations etc. is consistent.So-called size is completely the same, and the width Wh for referring not only to each resonator 31 is consistent with length Wa, and
Refer to that the line width of each resonator 31 is also consistent.
Certain gap is left between every 2 adjacent resonators 31.For whole micro-strip resonantor battle array 3, every 2
The distance between adjacent resonator 31 gradually increases from the centre of micro-strip resonantor battle array 3 to both sides, i.e. L45 ＜ L34=L56 ＜
L23=L67 ＜ L12=L78.In order to increase the stiffness of coupling between adjacent resonators 31, every 2 adjacent resonators 31 are closed
The position of mouth end and openend is interlaced, if the closed end of a resonator 31 is fractal structure 312 is located at resonator 31
Top, openend is the bottom that finger-cross structure 311 is located at resonator 31；Then the closed end of another resonator 31 is fractal structure
312 are located at the bottom of resonator 31, and openend is the top that finger-cross structure 311 is located at resonator 31.Interlocked by resonator 31
It is arranged in parallel to be coupled, and then the characteristic that wave filter miniaturization and second harmonic suppress can be realized.In addition, every 2 adjacent
Resonator 31 between can also add micro-strip bar or make two resonators parallel shifted about 31, so as to play fine setting resonator
The effect of 31 coefficients of coup.
In order to realize micro-strip resonantor battle array 3 and the connections of external devices, it is micro- that the two ends of micro-strip resonantor battle array 3 are additionally provided with input
Band 1 and output micro-strip 2.Input micro-strip 1 and occur incentive relationship, its mode with first resonator 31 in micro-strip resonantor battle array 3
Can be directly excitation or coupling excitation.Export micro-strip 2 and last resonator 31 in micro-strip resonantor battle array 3
Generation incentive relationship, its mode can be directly excitation or coupling excitation.In the utility model preferred embodiment,
Micro-strip 1 and output micro-strip 2 are inputted by the way of directly excitation, that is, inputs the leftmost side of micro-strip 1 and first resonator 31
Directly it is electrically connected, output micro-strip 2 and the rightmost side of last resonator 31 are directly electrically connected.Input micro-strip 1 and output
Micro-strip 2 is relevant with impedance matching with the access point position of micro-strip resonantor battle array 3, in the utility model preferred embodiment, input
Being equal to apart from H1 for the closed end of micro-strip 1 and first resonator 31 exports micro-strip 2 and the closed end of last resonator 31
Apart from H2.In order to keep the symmetry of filtering characteristic, the width W1 for inputting micro-strip 1 is equal with the width W2 for exporting micro-strip 2, defeated
The length L1 for entering micro-strip 1 is equal with the length L2 for exporting micro-strip 2.
An instantiation of the present utility model is given below：Micro-strip resonantor battle array 3 includes 8 resonators 31.Resonator
Spacing between 31 is respectively L12=0.4mm, L23=0.51mm, L34=0.54mm, L45=0.55mm, L56=0.54mm,
L67=0.51mm, L78=0.4mm.Micro belt line width in resonator 31 takes Wd=0.1mm, and its line spacing takes Ws=0.1mm,
A width of Wh=1.5mm of each resonator 31.Area shared by whole micro-strip resonantor battle array 3 is 15.45mm × 4.16mm, is compared
Same medium, the half-wavelength hair clip mode filter occupied area with dimension of microstrip line are much smaller, therefore this scheme has miniaturization
The characteristics of.The width W1=0.48mm of the feeder line of micro-strip 1 is inputted, the width W2=0.48mm of the feeder line of micro-strip 2 is exported, length is to whole
The performance impact of wave filter less, is taken as L1=L2=3.28mm herein.Result analogous diagram such as Fig. 4 of the high temperature superconduction wave filter
Shown, on the one hand the utility model can play obvious inhibitory action to the second harmonic of half-wave resonator 31, be conducive to
Improve the quality of signal；On the other hand the volume of resonator 31 can effectively be reduced, beneficial to the miniaturization of device.
The tool that above-described embodiment, only the purpose of this utility model, technical scheme and beneficial effect are further described
Body example, the utility model is not limited to this.It is all any modifications made within the scope of disclosure of the present utility model, equivalent
Replace, improve etc., it is all contained within protection domain of the present utility model.
Claims (10)
1. a kind of high temperature superconduction wave filter, including input micro-strip (1), output micro-strip (2) and micro-strip resonantor battle array (3)；Its feature
It is：
The micro-strip resonantor battle array (3) includes more than 2 resonators (31) being arranged parallel to each other；Each resonator (31) is
The resonator (31) that finger-cross structure (311) and fractal structure (312) are combined, wherein finger-cross structure (311) form the resonance
The openend of device (31), fractal structure (312) forms the closed end of the resonator (31)；Every 2 adjacent resonators (31) it
Between leave certain gap, and both closed end and openend position it is interlaced；
Input micro-strip (1) and occur incentive relationship, output micro-strip (2) with first resonator (31) in micro-strip resonantor battle array (3)
Occurs incentive relationship with last resonator (31) in micro-strip resonantor battle array (3).
2. a kind of high temperature superconduction wave filter according to claim 1, it is characterised in that：Fractal structure (312) is Hirbert
Fractal structure or the quasi- fractal structure based on Hirbert.
3. a kind of high temperature superconduction wave filter according to claim 1 or 2, it is characterised in that：The iteration of fractal structure (312)
Number of times K is between 2~4.
4. a kind of high temperature superconduction wave filter according to claim 1, it is characterised in that：Finger-cross structure (311) is by a plurality of phase
Mutually parallel slotting finger minor matters are constituted；Certain gap is left between every 2 adjacent slotting finger minor matters；Every 2 adjacent slotting finger minor matters
Sensing it is interlaced to insert, i.e., one insert refer to minor matters point to input micro-strip (1) side, another insert refer to minor matters point to output it is micro-
Band (2) side.
5. a kind of high temperature superconduction wave filter according to claim 1 or 4, it is characterised in that：The slotting finger of finger-cross structure (311)
The bar number of minor matters is more than 10.
6. a kind of high temperature superconduction wave filter according to claim 1, it is characterised in that：The line width Wd of each resonator (31)
It is consistent.
7. a kind of high temperature superconduction wave filter according to claim 1, it is characterised in that：Every 2 adjacent resonators (31)
Between provided with one section of micro-strip bar.
8. a kind of high temperature superconduction wave filter according to claim 1, it is characterised in that：Every 2 adjacent resonators (31)
The distance between from micro-strip resonantor battle array (3) centre gradually increase to both sides.
9. a kind of high temperature superconduction wave filter according to claim 1, it is characterised in that：Input micro-strip (1) and micro-band resonance
It is directly excitation or indirect excitation that incentive relationship, which occurs, for first resonator (31) in device battle array (3).
10. a kind of high temperature superconduction wave filter according to claim 1, it is characterised in that：Export micro-strip (2) and micro-band resonance
It is directly excitation or indirect excitation that incentive relationship, which occurs, for last resonator (31) in device battle array (3).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621249978.2U CN206401481U (en) | 2016-11-18 | 2016-11-18 | A kind of high temperature superconduction wave filter |
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| CN201621249978.2U CN206401481U (en) | 2016-11-18 | 2016-11-18 | A kind of high temperature superconduction wave filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106410338A (en) * | 2016-11-18 | 2017-02-15 | 桂林电子科技大学 | High temperature superconducting filter |
-
2016
- 2016-11-18 CN CN201621249978.2U patent/CN206401481U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106410338A (en) * | 2016-11-18 | 2017-02-15 | 桂林电子科技大学 | High temperature superconducting filter |
| CN106410338B (en) * | 2016-11-18 | 2020-12-18 | 桂林电子科技大学 | High-temperature superconducting filter |
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