CN206313738U - One kind miniaturization low-noise amplifier - Google Patents
One kind miniaturization low-noise amplifier Download PDFInfo
- Publication number
- CN206313738U CN206313738U CN201621404968.1U CN201621404968U CN206313738U CN 206313738 U CN206313738 U CN 206313738U CN 201621404968 U CN201621404968 U CN 201621404968U CN 206313738 U CN206313738 U CN 206313738U
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- China
- Prior art keywords
- low
- bandpass filter
- housing
- substrate
- noise amplifier
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Abstract
The utility model is related to a kind of miniaturization low-noise amplifier, including housing and the substrate being placed in housing, the first order bandpass filter one chip amplifier electrically connected with first order bandpass filter and the second level bandpass filter electrically connected with one chip amplifier that low noise amplification pipe is electrically connected with low noise amplification pipe are installed on the substrate, the housing is provided with the input connector electrically connected with low noise amplification pipe and the out connector electrically connected with second level bandpass filter, and the upper end of the housing is provided with the cover plate being matched therewith.Low-noise amplifier described in the utility model, it is ensured that while low noise and high-gain, the features such as with small volume, low cost, meets requirement of the user to minimizing, for high-performance receiving front-end product provides basic module.
Description
Technical field
The utility model is related to microwave technical field, and in particular to one kind miniaturization low-noise amplifier.
Background technology
Low-noise amplifier be modern microwave/millimetre-wave attenuator, radar, electronic warfare system etc. application in one it is extremely important
Part, be usually used in the front end of reception system, suppress noise jamming while amplifying and receiving signal, improve system sensitivity.
If high performance low-noise amplifier is connected in the front end of reception system, in the sufficiently large situation of low-noise amplifier gain
Under, it becomes possible to suppress the noise of late-class circuit, then the noise of whole receiver system will primarily depend upon the noise of amplifier.Such as
The noise coefficient reduction of fruit low-noise amplifier, the noise coefficient of receiver system can also diminish, and signal to noise ratio is improved, sensitive
Degree is greatly improved.The performance of microwave low-noise amplifier constrains the performance of whole reception system as can be seen here, for entirely connecing
The raising of systems technology level is received, conclusive effect is also play.
Microwave low-noise amplifier is the critical component of radar, electronic countermeasure and remote measuring and controlling reception system etc..L, S-band
Low-noise amplifier is generally used for remote measurement, remote control system.In electronic countermeasure, radar-reconnaissance, due to the frequency of the signal to be received
Rate scope is unknown, and frequency range is also intended to one of content scouted in fact, it requires the enough width of the frequency of receiver, then
The frequency of amplifier also requires that sufficiently wide.And, what radar-reconnaissance was received is the direct wave of radar emission, is that one way is received；And
What radar was received is target echo, so that reconnaissance plane just can ahead of time find radar target outside radar horizon.Spirit
Sensitivity receiver reconnaissance range high is just remote, and such as highly sensitive superheterodyne receiver can realize that very-long-range is scouted, and be used to
The transmitting of monitoring enemy's long-range missile, so, to increase reconnaissance range it is necessary to improve receiver sensitivity, it is desirable to high performance
Low-noise amplifier.In order to meet above-mentioned condition, low-noise amplifier its volume when making is all larger, relatively costly.
Utility model content
The purpose of this utility model is to provide a kind of miniaturization low-noise amplifier, and the amplifier ensure that low noise
While with high-gain performance, the features such as with small volume, low cost, requirement of the user to minimizing is met.
To achieve the above object, the utility model employs following technical scheme：
One kind miniaturization low-noise amplifier, including housing and the substrate that is placed in housing, are provided with low on the substrate
What the first order bandpass filter that noise amplifier tube is electrically connected with low noise amplification pipe was electrically connected with first order bandpass filter
One chip amplifier and the second level bandpass filter electrically connected with one chip amplifier, the housing are provided with and low noise amplification pipe
The input connector of electrical connection and the out connector electrically connected with second level bandpass filter, the upper end of the housing be provided with
Its cover plate being engaged.
Also include direct current tie line, the direct current tie line by conduction band respectively with low noise amplification pipe, the second level
One chip amplifier is electrically connected.
The substrate is fixedly connected with the casing by bolt.
The cover plate is integrated with housing by laser welding.
The input connector and out connector coordinate with housing screw thread.
The substrate uses ltcc substrate, and the first order bandpass filter and second level bandpass filter are using insertion
Formula LTCC wave filters.
It is integral with substrate structure in the embedded substrate of the first order bandpass filter and second level bandpass filter.
As shown from the above technical solution, miniaturization low-noise amplifier described in the utility model, it is ensured that low noise and height
While gain, the features such as with small volume, low cost, requirement of the user to minimizing is met, be that high-performance receiving front-end is produced
Product provide basic module.Miniaturization, the high-performance of bandpass filter are realized using LTCC techniques, and effectively reduces cost.
Brief description of the drawings
Fig. 1 is front view of the present utility model；
Fig. 2 be the utility model not cover plate when top view；
Fig. 3 is that the utility model substrate circuit and signal move towards schematic diagram.
Specific embodiment
The utility model is described further below in conjunction with the accompanying drawings：
As shown in Figures 1 to 3, the miniaturization low-noise amplifier of the present embodiment, including housing 1 and it is placed in housing 1
Ltcc substrate 2, the ltcc substrate 2 is fixed on the bottom of housing 1 by bolt 11, and low noise amplification pipe is provided with a substrate 2
3 with the embedded LTCC bandpass filters 4 of the first order that noise amplifier tube 3 is electrically connected and the embedded LTCC bandpass filterings of the first order
Device 4 electrical connection one chip amplifier 5 and with the embedded LTCC bandpass filters 6 in the second level that one chip amplifier 5 is electrically connected.In shell
Body 1 is provided with the input connector 7 and the electricity of LTCC bandpass filters embedded with the second level 6 electrically connected with low noise amplification pipe 3
The out connector 8 of connection, the input connector 7 and out connector 8 coordinate with the screw thread of housing 1.Set in the upper end of housing 1
Have the cover plate 10 being matched therewith, the cover plate 10 can with housing 1 using clamping, welding, threaded connection or other be fixedly connected, this
In embodiment, it is preferable over cover plate 10 and uses laser welding with housing 1, housing 1 is believed as low-noise amplifier main body with electromagnetism
Number shielding effect.
In the present embodiment, also including direct current tie line 9, the direct current tie line 9 is put with low noise respectively by conduction band
Big pipe 3, one chip amplifier 5 are electrically connected.The embedded LTCC bandpass filterings of the embedded LTCC bandpass filters 4 of the first order and the second level
It is embedded in ltcc substrate 2 in device 6, one is designed to ltcc substrate 2, the small of bandpass filter is realized using LTCC techniques
Type, high-performance, and effectively reduce cost.
Operation principle of the present utility model is：It is micro- when miniaturization low-noise amplifier described in the utility model works
Ripple signal enters ltcc substrate 2 through input connector 7, and the low noise amplification pipe 3 sequentially passed through on ltcc substrate 2 carries out low noise
Amplification, the embedded LTCC bandpass filters 4 of the first order, the gain amplification of one chip amplifier 5, the embedded LTCC bandpass filterings in the second level
After device 6 carries out bandpass filtering, via output connections device 8 is exported；Power supply signal via output connections device 8 enters ltcc substrate 2, by straight
Current feed circuit 9 isolates direct current signal, is that low noise amplification pipe 3, one chip amplifier 5 are powered.
Embodiment described above is only that preferred embodiment of the present utility model is described, not to this practicality
New scope is defined, and on the premise of the utility model design spirit is not departed from, those of ordinary skill in the art are to this
Various modifications and improvement that the technical scheme of utility model is made, all should fall into the protection of the utility model claims determination
In the range of.
Claims (7)
- It is 1. a kind of to minimize low-noise amplifier, it is characterised in that：Including housing（1）And it is placed in housing（1）Interior substrate（2）, The substrate（2）On low noise amplification pipe is installed（3）With low noise amplification pipe（3）The first order bandpass filter of electrical connection （4）With first order bandpass filter（4）The one chip amplifier of electrical connection（5）And and one chip amplifier（5）The second level of electrical connection Bandpass filter（6）, the housing（1）It is provided with and low noise amplification pipe（3）The input connector of electrical connection（7）And with second Level bandpass filter（6）The out connector of electrical connection（8）, the housing（1）Upper end be provided with the cover plate being matched therewith （10）.
- 2. miniaturization low-noise amplifier according to claim 1, it is characterised in that：Also include direct current tie line（9）, The direct current tie line（9）By conduction band respectively with low noise amplification pipe（3）, second level one chip amplifier（5）Electrical connection.
- 3. miniaturization low-noise amplifier according to claim 1, it is characterised in that：The substrate（2）By bolt （11）With housing（1）It is fixedly connected.
- 4. miniaturization low-noise amplifier according to claim 1, it is characterised in that：The cover plate（10）With housing（1） It is integrated by laser welding.
- 5. miniaturization low-noise amplifier according to claim 1, it is characterised in that：The input connector（7）With it is defeated Go out connector（8）And housing（1）Screw thread coordinates.
- 6. miniaturization low-noise amplifier according to claim 1, it is characterised in that：The substrate（2）Using LTCC bases Plate, the first order bandpass filter（4）With second level bandpass filter（6）Use embedded LTCC wave filters.
- 7. miniaturization low-noise amplifier according to claim 6, it is characterised in that：The first order bandpass filter （4）With second level bandpass filter（6）It is embedded in substrate（2）In with substrate（2）Structure is integral.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621404968.1U CN206313738U (en) | 2016-12-20 | 2016-12-20 | One kind miniaturization low-noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621404968.1U CN206313738U (en) | 2016-12-20 | 2016-12-20 | One kind miniaturization low-noise amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206313738U true CN206313738U (en) | 2017-07-07 |
Family
ID=59252012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621404968.1U Active CN206313738U (en) | 2016-12-20 | 2016-12-20 | One kind miniaturization low-noise amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206313738U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849877A (en) * | 2016-12-20 | 2017-06-13 | 中国电子科技集团公司第四十三研究所 | One kind miniaturization low-noise amplifier |
-
2016
- 2016-12-20 CN CN201621404968.1U patent/CN206313738U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106849877A (en) * | 2016-12-20 | 2017-06-13 | 中国电子科技集团公司第四十三研究所 | One kind miniaturization low-noise amplifier |
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