CN206308418U - A kind of carborundum tube precipitation equipment - Google Patents
A kind of carborundum tube precipitation equipment Download PDFInfo
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- CN206308418U CN206308418U CN201621259882.4U CN201621259882U CN206308418U CN 206308418 U CN206308418 U CN 206308418U CN 201621259882 U CN201621259882 U CN 201621259882U CN 206308418 U CN206308418 U CN 206308418U
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- silicon carbide
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- precipitation equipment
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Abstract
The utility model discloses a kind of carborundum tube precipitation equipment, including quartzy tube layer, silicon carbide layer and the first heat-insulation layer, wherein described quartz ampoule layer, the silicon carbide layer and first heat-insulation layer are tubular structure, first heat-insulation layer is set in the surface of the silicon carbide layer, the silicon carbide layer is set in the surface of the quartzy tube layer, and the quartzy tube layer is internally formed crystallizing field.The utility model can realize not using the object in the case of high vacuum to needing to plate carbon membrane quickly to plate out the controllable carbon membrane of even structure, thickness, and have the advantages that easily-controllable efficiency high, process conditions, carbon membrane and object are tightly combined.
Description
Technical field
The utility model is related to a kind of carborundum tube precipitation equipment.
Background technology
At present, the semiconductor containing lithium has the volatilization of lithium when temperature is higher than 800 DEG C, causes growing single crystals quartz ampoule
There is heavy corrosion, or even quartzy tracheal rupture in inwall；Also existing graphite crucible contains substantial amounts of hole and causes rough surface not
Beneficial to growing single crystals, and pass through using can be solved the above problems in quartzy inside pipe wall and graphite crucible plated surface pyrolytic carbon；
In addition, be that subsequent experimental prevents corrosion, it is necessary to plate carbon membrane on sample in some experiments, improve wearability, electric conductivity,
Reflective and having improved aesthetic appearance etc. are acted on；Also some applications such as carbon film resistor, is using high-temperature vacuum coating technology that carbon is tight
Then plus appropriate joint cutting the close porcelain rod surface that is attached to forms carbon membrane, and coats epoxy sealing protection on its surface and forms,
Its surface often scribbles greenism paint, and the wherein thickness of carbon membrane determines the size of resistance, generally by controlling thickness and the quarter of film
Groove carrys out control resistor.
As previously shown, application is more and more extensive now for plating carbon membrane technology, but existing plating carbon membrane technology generally needs
Carried out under high vacuum state, taken a long time, but also there are problems that being heated uneven and causing carbon membrane.
The disclosure of background above technology contents is only used for auxiliary and understands design of the present utility model and technical scheme, and it is not
Necessarily belong in the prior art of present patent application, the applying date of the above in present patent application is being shown without tangible proof
In the case of disclosed, above-mentioned background technology should not be taken to evaluate the novelty and creativeness of the application.
Utility model content
In order to solve the above technical problems, the utility model proposes a kind of carborundum tube precipitation equipment, can realize not using
The controllable carbon membrane of even structure, thickness is quickly plated out to the object for needing to plate carbon membrane in the case of high vacuum, and with effect
The advantages of rate is high, process conditions are easily-controllable, carbon membrane and object are tightly combined.
To reach above-mentioned purpose, the utility model uses following technical scheme：
The utility model discloses a kind of carborundum tube precipitation equipment, including quartzy tube layer, silicon carbide layer and the first insulation
Layer, wherein quartz ampoule layer, the silicon carbide layer and first heat-insulation layer are tubular structure, the first heat-insulation layer set
The surface of the silicon carbide layer is located at, the silicon carbide layer is set in the surface of the quartzy tube layer, inside the quartzy tube layer
Form crystallizing field.
Preferably, the internal diameter of the silicon carbide layer is 2~20cm.
Preferably, the thickness of the silicon carbide layer is 5~15mm.
Preferably, the material of first heat-insulation layer is common asbestos, high alumina asbestos, cotton containing zircon, mullite fiber blanket
In one kind.
Preferably, the thickness of first heat-insulation layer is 3~8cm.
Preferably, the depositing SiC device also includes the second heat-insulation layer, and second heat-insulation layer is arranged on described the
The end of one heat-insulation layer, wherein quartz ampoule layer is extended in second heat-insulation layer, to form the connection crystallizing field
Gas passage.
Preferably, the material of second heat-insulation layer is common asbestos, high alumina asbestos, cotton containing zircon, mullite fiber blanket
In one kind.
Compared with prior art, the beneficial effects of the utility model are：The utility model provides a kind of including quartz ampoule
The carborundum tube precipitation equipment of layer, silicon carbide layer and the first heat-insulation layer, is internally formed crystallizing field, it would be desirable to plate charcoal in quartzy tube layer
The object of film is placed in the crystallizing field, and by heating using microwave, and it is passed through carbon-source gas, it is possible to realization does not use high vacuum
In the case of the controllable carbon membrane of even structure, thickness is quickly plated out to the object that needs to plate carbon membrane, and with efficiency high, work
The advantages of skill condition is easily-controllable, carbon membrane and object are tightly combined.
In further scheme, the second insulation portion is additionally provided with the end of the first heat-insulation layer, and quartzy tube layer is extended to
Second insulation portion, forms the gas passage of connection crystallizing field so that thermal loss is smaller in crystallizing field.
Brief description of the drawings
Fig. 1 is the cross-sectional view of the carborundum tube precipitation equipment of the utility model preferred embodiment；
Fig. 2 is the Longitudinal cross section schematic of the carborundum tube precipitation equipment of the utility model preferred embodiment；
Fig. 3 is the schematic diagram of the graphite crucible plating carbon membrane of the utility model embodiment one；
Fig. 4 is the quartz ampoule plating carbon membrane schematic diagram of the utility model embodiment two.
Specific embodiment
Below against accompanying drawing and with reference to preferred embodiment the utility model is described in further detail.
As depicted in figs. 1 and 2, the carborundum tube precipitation equipment of the utility model preferred embodiment include quartzy tube layer 11,
The heat-insulation layer 13 of silicon carbide layer 12 and first, the first heat-insulation layer 13 is set in the surface of silicon carbide layer 12, and silicon carbide layer 12 is set in
The surface of quartzy tube layer 11, quartzy tube layer 11 is internally formed crystallizing field 14, in the end (namely first of carborundum tube precipitation equipment
The end of heat-insulation layer 13) the second heat-insulation layer 15 is additionally provided with, quartzy tube layer extends to the second heat-insulation layer 15, and deposition is communicated to be formed
The gas passage in area 14.Wherein the internal diameter of silicon carbide layer 12 is 2~20cm, and the thickness of silicon carbide layer 12 is 5~15mm, and first protects
The thickness of warm layer 13 is 3~8cm, the first heat-insulation layer 13 and the second heat-insulation layer 15 respectively can using common asbestos, high alumina asbestos,
Cotton containing zircon, any one in mullite fiber blanket.
Following combination instantiations are carried out to quickly being plated carbon membrane using carborundum tube precipitation equipment of the present utility model
Further illustrate.
Example one：
As shown in figure 3, the object of this example is graphite crucible 2, first to the alcohol of graphite crucible 2, acetone and/or dilute
Hydrochloric acid is cleaned, and then graphite crucible 2 is placed in the crystallizing field 14 of carborundum tube precipitation equipment, using microwave to graphite earthenware
Crucible 2 and carborundum tube precipitation equipment heat simultaneously so that the temperature (namely temperature of crystallizing field 14) of graphite crucible 2 is
1200 DEG C, to the mixed gas that carbonaceous sources gas is passed through in crystallizing field 14, there is cracking reaction in crystallizing field internal carbon source gas, make
Obtain in the superficial growth pyrolytic carbon of graphite crucible 2.Wherein in this example, carbon-source gas are methane, and diluent gas is nitrogen, mixing
Gas is that methane is processed by nitrogen dilution, wherein the mass concentration of methane is 30%~40% in mixed gas, deposition
Vacuum in area is 70KPa, and sedimentation time is 15min, and carbon membrane thickness reaches 1 μm；By detection, on the surface of graphite crucible 2
The carbon membrane thickness for plating is highly uniform.
Example two：
As shown in figure 4, the object of this example be silicon dioxide tube 3, first to the alcohol of silicon dioxide tube 3, acetone and/
Or watery hydrochloric acid is cleaned, then silicon dioxide tube 3 is placed in the crystallizing field 14 of carborundum tube precipitation equipment, using microwave pair
Silicon dioxide tube 3 and carborundum tube precipitation equipment heat simultaneously so that the temperature of silicon dioxide tube 3 (namely crystallizing field 14
Temperature) be 1150 DEG C, to the mixed gas that carbonaceous sources gas is passed through in crystallizing field 14, split in crystallizing field internal carbon source gas
Solution reaction so that in the superficial growth pyrolytic carbon of silicon dioxide tube 3.Wherein in this example, carbon-source gas are natural gas, carrier gas
Body is argon gas, and mixed gas are by argon-dilution process, wherein the mass concentration of methane is in mixed gas by natural gas
20%~40%, the vacuum in crystallizing field is 60KPa, and sedimentation time is 15min, and carbon membrane thickness reaches 1 μm；By detection,
Carbon membrane thickness on the plated surface of silicon dioxide tube 3 is highly uniform.Wherein, in this example in carborundum tube precipitation equipment to carbonization
The position of silicon layer 12 is adjusted (moved on silicon carbide layer 12), controls heating zone in the mouth of pipe top position of silicon dioxide tube 3,
So as to not be deposited upper pyrolytic carbon at the mouth of pipe for controlling silicon dioxide tube 3, subsequent growth monocrystalline is facilitated to seal, convenient control.
Example three：
The object of this example is ceramic rod, ceramic rod is cleaned with alcohol, acetone and/or watery hydrochloric acid first, so
Ceramic rod is placed in the crystallizing field of carborundum tube precipitation equipment afterwards, it is same to ceramic rod and carborundum tube precipitation equipment using microwave
When heat so that the temperature (namely temperature of crystallizing field) of ceramic rod is 1100 DEG C, to being passed through carbonaceous sources gas in crystallizing field
, there is cracking reaction in crystallizing field internal carbon source gas so that in ceramic rod superficial growth pyrolytic carbon in the mixed gas of body.Wherein exist
In this example, carbon-source gas are acetylene, and diluent gas is argon gas, and mixed gas are that acetylene is passed through into argon-dilution process, wherein
The mass concentration of methane is 50%~60% in mixed gas, and the vacuum in crystallizing field is 80KPa, and sedimentation time is 3 small
When, carbon membrane thickness reaches 200 μm；By detection, the carbon membrane thickness on ceramic rod plated surface is highly uniform.
In other instances, carbon-source gas can also be using oil gas, propylene etc., the quality of carbon-source gas in mixed gas
Concentration is within 10%~80%；The flow of mixed gas is passed through in crystallizing field for 50~300sccm, the vacuum in crystallizing field
It is 50~80KPa, sedimentation time is less than or equal to 2h.In some instances, object can also be simple glass, corundum piece,
Corundum crucible, sapphire sheet, silicon chip etc..
The method for carrying out plating carbon membrane by the depositing SiC device of the utility model embodiment is to target by microwave
Thing and the heating of carborundum tube precipitation equipment are by the temperature control of crystallizing field within 1000~1400 DEG C so that be passed through carborundum tube
Carbon-source gas in heating deposition device carry out cracking reaction, and the pyrolytic carbon of generation is deposited in crystallizing field, so as in object
On quickly plate uniform carbon membrane；With advantages below：
1. can be directly heated using microwave by carborundum tube precipitation equipment of the present utility model, heating using microwave speed
Hurry up, with reference to the first heat-insulation layer and the second heat-insulation layer, thermal loss is small, easy to operate, such that it is able in a short time in crystallizing field
Target temperature is reached, deposition terminates, stop microwave, i.e., stop heating at once, cooling is rapid, the time required to cooling can be shortened,
And can be with Based Intelligent Control cooling rate；Follow-up blowing out inspection and change technique are all easy to carry out, and when going wrong,
Can emergent stopping reaction, so as to ensure the safety of experimental provision and personnel；This kind of method shortens the process time, improves production
Rate, so that reduces cost, can control product quality again.
2. very low vacuum is only needed in the crystallizing field in carborundum tube precipitation equipment of the present utility model and ensures fire door
It is closed, gas flow needed for reaction is small, and concentration is low, so as to improve the utilization rate of carbon-source gas.
3. the carbon-source gas being passed through in carborundum tube precipitation equipment of the present utility model can be heated in crystallizing field, and
Itself also absorbs microwave, so as to cause molecular vibration, is polarized under microwave action, reduces reaction activity, changes reaction
Dynamics, so as to promote the reaction to carry out, improves plating membrane efficiency.
4. in carrying out plated film using carborundum tube precipitation equipment of the present utility model, heating using microwave can be with target surface
More active sites, the more conducively generation of carbon membrane are formed, during subsequent growth, active site exists always, so as to ensure anti-
Answering equilibrium is carried out, it is ensured that obtained carbon membrane even structure.
5. can be hindered in graphite crucible or quartz ampoule plated surface pyrolytic carbon by carborundum tube precipitation equipment of the present utility model
Hinder contact of the crystal growth raw material with graphite, it is to avoid pollution of the graphite crucible inside impurity to monocrystal, maintain monocrystalline
The complete smooth profile of body；The temperature of heating region can be controlled by controlling the position of silicon carbide layer, so as to control quartz
The mouth of pipe is not deposited upper pyrolytic carbon, facilitates subsequent growth monocrystalline to seal.
6. plating carbon membrane is carried out using carborundum tube precipitation equipment of the present utility model, the situation of high vacuum can not used
Under, the controllable carbon membrane of even structure, thickness is just quickly plated out, the economy of industrialized production is improved, to make carbon film resistor
A kind of new thinking is provided.
In addition, can also be used to prepare charcoal micron tube etc. using depositing SiC device of the present utility model, it is widely used.
Above content is to combine specific preferred embodiment further detailed description of the utility model, it is impossible to
Assert that specific implementation of the present utility model is confined to these explanations.For the utility model person of ordinary skill in the field
For, without departing from the concept of the premise utility, some equivalent substitutes or obvious modification, and performance can also be made
Or purposes is identical, protection domain of the present utility model should be all considered as belonging to.
Claims (7)
1. a kind of carborundum tube precipitation equipment, it is characterised in that including quartzy tube layer, silicon carbide layer and the first heat-insulation layer, wherein
The quartzy tube layer, the silicon carbide layer and first heat-insulation layer are tubular structure, and first heat-insulation layer is set in institute
The surface of silicon carbide layer is stated, the silicon carbide layer is set in the surface of the quartzy tube layer, and it is heavy that the quartzy tube layer is internally formed
Product area.
2. carborundum tube precipitation equipment according to claim 1, it is characterised in that the internal diameter of the silicon carbide layer is 2~
20cm。
3. carborundum tube precipitation equipment according to claim 1, it is characterised in that the thickness of the silicon carbide layer is 5~
15mm。
4. carborundum tube precipitation equipment according to claim 1, it is characterised in that the material of first heat-insulation layer is general
One kind in logical asbestos, high alumina asbestos, cotton containing zircon, mullite fiber blanket.
5. carborundum tube precipitation equipment according to claim 1, it is characterised in that the thickness of first heat-insulation layer is 3
~8cm.
6. the carborundum tube precipitation equipment according to any one of claim 1 to 5, it is characterised in that also including the second insulation
Layer, second heat-insulation layer is arranged on the end of first heat-insulation layer, wherein quartz ampoule layer extends to described second protecting
In warm layer, the gas passage of the crystallizing field is connected to be formed.
7. carborundum tube precipitation equipment according to claim 6, it is characterised in that the material of second heat-insulation layer is general
One kind in logical asbestos, high alumina asbestos, cotton containing zircon, mullite fiber blanket.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621259882.4U CN206308418U (en) | 2016-11-23 | 2016-11-23 | A kind of carborundum tube precipitation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621259882.4U CN206308418U (en) | 2016-11-23 | 2016-11-23 | A kind of carborundum tube precipitation equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206308418U true CN206308418U (en) | 2017-07-07 |
Family
ID=59244110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621259882.4U Expired - Fee Related CN206308418U (en) | 2016-11-23 | 2016-11-23 | A kind of carborundum tube precipitation equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206308418U (en) |
-
2016
- 2016-11-23 CN CN201621259882.4U patent/CN206308418U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 523843 Changan City, Guangdong Province town on the corner management area Co-patentee after: DONGGUAN HUACHENG METAL TECHNOLOGY CO., LTD. Patentee after: Guangdong wins smart group Limited by Share Ltd Address before: 523843 Changan City, Guangdong Province town on the corner management area Co-patentee before: DONGGUAN HUACHENG METAL TECHNOLOGY CO., LTD. Patentee before: Dongguan Janus Precision Components Co., Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170707 Termination date: 20201123 |
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| CF01 | Termination of patent right due to non-payment of annual fee |