CN206301047U - High-strength anti-seismic type scintillation crystal array - Google Patents
High-strength anti-seismic type scintillation crystal array Download PDFInfo
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- CN206301047U CN206301047U CN201621461131.0U CN201621461131U CN206301047U CN 206301047 U CN206301047 U CN 206301047U CN 201621461131 U CN201621461131 U CN 201621461131U CN 206301047 U CN206301047 U CN 206301047U
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- scintillation crystal
- crystal array
- protective case
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Abstract
The utility model provides a kind of high-strength anti-seismic type scintillation crystal array, belong to medical apparatus and instruments field, solve scintillation crystal array in the prior art causes loosely organized or crystal impaired so as to produce light leak because being influenceed by external force, receive light and the not good problem of imaging effect, there is provided a kind of intensity high, shock resistance is good, not easily damaged or light leak high-strength anti-seismic type scintillation crystal array, it includes scintillation crystal array and protective case, the protective case is shell-like, bottom surface internal layer size is consistent with scintillation crystal array bottom surface outer layer size shape same size, highly it is equal to scintillation crystal array highly, it is nested in outside scintillation crystal array, retain scintillation crystal array end face as exiting surface；The protective case inner surface is the face of uniform smooth, and also including high reflection layer, the high reflection layer is wrapped in outside scintillation crystal array, between scintillation crystal array and protective case.
Description
Technical field
The utility model belongs to medical apparatus and instruments field, and in particular to a kind of high-strength anti-seismic type scintillation crystal array.
Background technology
Extensively, these detectors can measure radiation ray and their property to the species of radiation detector, and conventional has
Ionisation chamber, counting tube and scintillation counter, atomic nucleus emulsion, solid state nuclear track detector and semiconductor detector etc..Its principle
Produced various effects when mainly using radiation with matter interaction.Such as application charged particle is acted on material and produced
Ionisation chamber, counting tube that the principle of ionization makes, and alpha track detector etc.；The scinticounting made using its fluorescence
Device；Using ionizing and excite caused chemical reaction process to make atomic nucleus emulsion, solid state nuclear track detector etc..Wherein dodge
Bright counter resolving time is short, efficiency high, can also be most in its application process according to the energy of the size measurement particle of electric signal
Using scintillation crystal array as energy acceptance end, by the scintillation crystal discharging fluorescence of energy excitation, by photomultiplier
(PMT) exported after converting optical signals into measurable electronic signal.
Under normal circumstances, be arranged on radiation detector as receiving terminal must direct going out array for scintillation crystal array
Smooth surface contacts photomultiplier, and array is assembled by finished scintillation crystal, itself does not have good physics
Intensity, installation or the process using activity-sensing equipment inevitably cause array to shake therewith, and being stressed easily makes battle array
Row scatter or crystal bar is damaged, but existing scintillation crystal array only coats one layer of aluminum foil and adhesive tape in outside, is had no as protective layer
Method is intercepted the influence that external force brings array such as rocks, shakes, if array is influenceed to cause loosely organized to produce light leak by external force
Phenomenon, destroy scintillation crystal array receipts light and imaging effect, and then influence radiation detector function.
A kind of high-strength anti-seismic type scintillation crystal array how is designed, is the technical barrier that prior art is badly in need of solving.
Utility model content
In order to solve scintillation crystal array, because being influenceed to cause by external force, loosely organized or crystal is impaired, array produces leakage
Light, receipts light and the not good problem of imaging effect, and then the function of radiation detector is influenceed, the utility model provides a kind of intensity
It is high, shock resistance is good, be not damaged or light leak high-strength anti-seismic type scintillation crystal array.
It is as follows that the utility model solves the technical scheme that its technical problem used：A kind of high-strength anti-seismic type scintillation crystal
Array, it includes scintillation crystal array and protective case, and the protective case is shell-like, bottom surface internal layer size and scintillation crystal array bottom
Face outer layer size shape same size is consistent, highly equal to scintillation crystal array highly, is nested in outside scintillation crystal array, retains
Scintillation crystal array end face is used as exiting surface；The protective case inner surface is the face of uniform smooth, also including high reflection layer, institute
State high reflection layer to be wrapped in outside scintillation crystal array, between scintillation crystal array and protective case.
The protective case bottom surface is structure as a whole with side.
When not installing, inner surface size is equal to or slightly less than the exterior surface dimension of scintillation crystal array to protective case, in peace
Inner surface size expansion is caused by heating during dress, is nested in outside scintillation crystal array, temperature drop, protective case shrinks, then protect
Sheath firmly wales scintillation crystal array so that scintillation crystal array resistance to pressure becomes strong, is difficult loose deformation.Protective case is hard
Composite material, to a certain extent heating does not result in deformation, and the smoothness on its surface is not influenceed.
Also include protective layer, the protective layer is located at surrounding and the bottom of the structure that scintillation crystal array and protective case are constituted
Face, the protective layer includes antidetonation layer, double-sided aluminum foil adhesive tape, and one side aluminum foil and adhesive tape, wherein antidetonation layer are located at the centre of protective layer,
Antidetonation layer both sides are one side aluminum foil and adhesive tape and double-sided aluminum foil adhesive tape, and double-sided aluminum foil adhesive tape is located between antidetonation layer and protective case.
The antidetonation layer material is selected from any one in EPE pearl wool, silica gel, rubber, high molecule plastic.
The scintillation crystal array includes scintillation crystal crystal bar, high reflectance reflecting layer, and the scintillation crystal crystal bar is 1
More than, the high reflectance reflecting layer is located between scintillation crystal crystal bar and scintillation crystal crystal bar；The high reflectance reflecting layer
Including reflectance coating, optics UV glue-lines and gluing joint, wherein, gluing junction is located at the epimere 1/10-4/9 of reflectance coating both sides
And hypomere 1/10-4/9 positions, two regions account for the 20-50% of the reflectance coating gross area altogether, and optics UV glue-lines are evenly distributed on painting and are glued
On at conjunction.The end face of the scintillation crystal array refers to the plane of all scintillation crystal crystal bar top compositions.
Further, gluing junction is centrally located at epimere 1/3 and the position of hypomere 1/3 of reflectance coating both sides, two regions
The 25-35% of the reflectance coating gross area is accounted for altogether, and optics UV glue-lines are evenly distributed on gluing joint.
As more preferably technical scheme of the present utility model, gluing junction is centrally located at the epimere 1/3 of reflectance coating both sides
And the position of hypomere 1/3, two regions account for the 30% of the reflectance coating gross area altogether.
As optimal technical scheme of the present utility model, the gluing junction position positioned at reflectance coating both sides is relative, size
It is identical.
The scintillation crystal crystal bar be N × M bars, N >=2, M >=2 are combined into array, in most cases, N=M.
The end face of the scintillation crystal array refers to the plane that all scintillation crystal crystal bar end faces are formed.
The beneficial effects of the utility model are：
1. the presence of the utility model protective case serves fixed, spacing, antidetonation, increasing from structure to scintillation crystal array
The effects such as reinforcement degree, increase compressive resistance, so as to further reduce optics UV glue-lines amount and control optics UV glue-lines to be distributed position
Put, further the loss of reduction light output, the light output that can be improved under conditions of identical crystalline material, optics UV glue, and
The presence of protective layer and protective case, can further reduce the consumption of optics UV glue-lines so that light output efficiency is obtained more
It is further to improve.Through experiment, in the case of equal tolerance intensity, under conditions of identical crystalline material, optics UV glue, energy
The light output of raising is up to 33%.Leakage problem is not likely to produce, stability when array is operated is improved.
2. protective layer covering material is added outside the utility model scintillation crystal array protective case to be brought more preferably to this product
Protecting effect, enhances anti-seismic performance.
3. the utility model because structure in itself very firmly, can suitably reduce optics UV glue usage amount and control its position
Put, and reach optimal balance, it is to avoid UV glue residues in array surface in an assembling process, lower the difficulty in assembling process
Degree.
Brief description of the drawings
Fig. 1 is the overlooking the structure diagram of embodiment 1；
Fig. 2 is the overlooking the structure diagram of embodiment 2；
Fig. 3 is the cross-section structural representation of embodiment 2；
Fig. 4 is the decomposition texture schematic diagram of embodiment 3.
Specific embodiment
Describe implementation method of the present utility model in detail with reference to the accompanying drawings.
Embodiment 1：
Referring to Fig. 1：A kind of high-strength anti-seismic type scintillation crystal array, it includes scintillation crystal array 1 and protective case 2, institute
Protective case 2 is stated for shell-like, bottom surface internal layer size is consistent with scintillation crystal array bottom surface outer layer size shape same size, height etc.
In the height of scintillation crystal array 1, it is nested in outside scintillation crystal array 1, retains the end face 8 of scintillation crystal array 1 as exiting surface；
The inner surface of the protective case 2 is the face of uniform smooth, and also including high reflection layer 3, the high reflection layer 3 is wrapped in scintillation crystal battle array
Outside row 1, between scintillation crystal array 1 and protective case 2.
The end face of the scintillation crystal array refers to the plane that all scintillation crystal crystal bar end faces are formed, and refers in particular to flicker
The plane that crystal crystal bar light extraction end is formed.
The bottom surface of the protective case 2 is structure as a whole with side, and protective case 2 is square tube shape sleeve-like structure in the present embodiment.
When not installing, inner surface size is equal to or slightly less than the exterior surface dimension of scintillation crystal array 1 to protective case 2,
Inner surface size expansion is caused by heating during installation, is nested in outside scintillation crystal array, temperature drop, protective case 2 shrinks, then
Protective case 2 firmly wales scintillation crystal array 1 so that more preferably, resistance to pressure becomes strong to the stability of scintillation crystal array 1, and antidetonation is strong
Degree becomes strong, is difficult loose deformation.Protective case is rigid composite material, and heating to a certain extent does not result in deformation, does not influence
The smoothness on its surface.
Embodiment 2：
Based on the technology of embodiment 1, also including protective layer 12, the protective layer 12 is located at scintillation crystal array and protective case
The surrounding of 2 structures for constituting and bottom surface, the protective layer 12 include antidetonation layer 10, double-sided aluminum foil adhesive tape 9, one side aluminum foil and adhesive tape
11, wherein antidetonation layer 10 is located at the centre of protective layer 12, and 10 both sides of antidetonation layer are one side aluminum foil and adhesive tape 11 and double-sided aluminum foil adhesive tape
9, double-sided aluminum foil glue 11 is between antidetonation layer 10 and protective case 2.
The antidetonation layer material is selected from any one in EPE pearl wool, silica gel, rubber, high molecule plastic.
Embodiment 3：
Based on the technology of embodiment 1 or 2, the structure of scintillation crystal array is illustrated further：Scintillation crystal array 1 includes
Scintillation crystal crystal bar 3, high reflectance reflecting layer 4, the scintillation crystal crystal bar are 100, form 10 × 10 array 1, described
High reflectance reflecting layer 4 is located between scintillation crystal crystal bar 3 and crystal bar；The high reflectance reflecting layer 4 includes reflectance coating 5, light
UV glue-lines 6 and gluing joint 7 are learned, wherein, gluing junction 7 is centrally located at the epimere 1/3 and hypomere 1/3 of the both sides of reflectance coating 5
Position, two regions account for the 30% of the reflectance coating gross area altogether, and optics UV glue-lines 6 are evenly distributed on gluing joint 7.Positioned at reflection
The position of gluing junction 7 of the both sides of film 5 is relative, and size is identical.
Certainly, the above is preferred embodiment of the present utility model, it is noted that common for the art
For technical staff, on the premise of the utility model principle is not departed from, some improvements and modifications can also be made, these improvement
Protection domain of the present utility model is also considered as with retouching.
Claims (9)
1. a kind of high-strength anti-seismic type scintillation crystal array, it is characterised in that：It includes scintillation crystal array and protective case, described
Protective case is shell-like, and bottom surface internal layer is consistent with scintillation crystal array bottom surface outer layer shape same size, highly equal to scintillation crystal
Array heights, are nested in outside scintillation crystal array, retain scintillation crystal array end face as exiting surface；Table in the protective case
Face is the face of uniform smooth, and also including high reflection layer, the high reflection layer is wrapped in outside scintillation crystal array, positioned at scintillation crystal
Between array and protective case.
2. high-strength anti-seismic type scintillation crystal array according to claim 1, it is characterised in that：The protective case bottom surface with
Side is structure as a whole.
3. high-strength anti-seismic type scintillation crystal array according to claim 1, it is characterised in that：Protective case is not being installed
When, inner surface size is equal to or slightly less than the exterior surface dimension of scintillation crystal array.
4. high-strength anti-seismic type scintillation crystal array according to claim 1, it is characterised in that：Also include protective layer, institute
State surrounding and the bottom surface of the structure that protective layer is constituted positioned at scintillation crystal array and protective case, the protective layer include antidetonation layer,
Double-sided aluminum foil adhesive tape, one side aluminum foil and adhesive tape, wherein antidetonation layer is located at the centre of protective layer, and antidetonation layer both sides are one side aluminum foil and adhesive tape
And double-sided aluminum foil adhesive tape, double-sided aluminum foil adhesive tape is between antidetonation layer and protective case.
5. according to any described high-strength anti-seismic type scintillation crystal arrays of claim 1-4, it is characterised in that：The flicker is brilliant
Volume array includes scintillation crystal crystal bar, high reflectance reflecting layer, and the scintillation crystal crystal bar is more than 1, the high reflectance
Reflecting layer is located between scintillation crystal crystal bar and scintillation crystal crystal bar；The high reflectance reflecting layer includes reflectance coating, optics UV
Glue-line and gluing joint, wherein, gluing junction be located at reflectance coating both sides epimere 1/10-4/9 and hypomere 1/10-4/9
Put, two regions account for the 20-50% of the reflectance coating gross area altogether, optics UV glue-lines are evenly distributed on gluing joint；The flicker
The end face of crystal array refers to the plane of all scintillation crystal crystal bar top compositions.
6. high-strength anti-seismic type scintillation crystal array according to claim 5, it is characterised in that：Gluing junction centre bit
Epimere 1/3 and the position of hypomere 1/3 in reflectance coating both sides, two regions account for the 25-35% of the reflectance coating gross area, optics UV glue-lines altogether
It is evenly distributed on gluing joint.
7. high-strength anti-seismic type scintillation crystal array according to claim 6, it is characterised in that：Gluing junction centre bit
Epimere 1/3 and the position of hypomere 1/3 in reflectance coating both sides, two regions account for the 30% of the reflectance coating gross area altogether.
8. high-strength anti-seismic type scintillation crystal array according to claim 5, it is characterised in that：Positioned at reflectance coating both sides
Gluing junction position is relative, and size is identical.
9. high-strength anti-seismic type scintillation crystal array according to claim 5, it is characterised in that：The scintillation crystal crystal bar
It is N × M bars, N >=2, M >=2 are combined into array, in most cases, N=M.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621461131.0U CN206301047U (en) | 2016-12-29 | 2016-12-29 | High-strength anti-seismic type scintillation crystal array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621461131.0U CN206301047U (en) | 2016-12-29 | 2016-12-29 | High-strength anti-seismic type scintillation crystal array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206301047U true CN206301047U (en) | 2017-07-04 |
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ID=59205859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621461131.0U Expired - Fee Related CN206301047U (en) | 2016-12-29 | 2016-12-29 | High-strength anti-seismic type scintillation crystal array |
Country Status (1)
| Country | Link |
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| CN (1) | CN206301047U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113176604A (en) * | 2021-04-30 | 2021-07-27 | 中国电子科技集团公司第二十六研究所 | Scintillation crystal array anti-irradiation reinforcing structure and anti-irradiation reinforcing method |
-
2016
- 2016-12-29 CN CN201621461131.0U patent/CN206301047U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113176604A (en) * | 2021-04-30 | 2021-07-27 | 中国电子科技集团公司第二十六研究所 | Scintillation crystal array anti-irradiation reinforcing structure and anti-irradiation reinforcing method |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170704 Termination date: 20191229 |