CN206294470U - A kind of radiator structure of high-power discharge and recharge MOS groups - Google Patents
A kind of radiator structure of high-power discharge and recharge MOS groups Download PDFInfo
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- CN206294470U CN206294470U CN201621436316.6U CN201621436316U CN206294470U CN 206294470 U CN206294470 U CN 206294470U CN 201621436316 U CN201621436316 U CN 201621436316U CN 206294470 U CN206294470 U CN 206294470U
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- mos groups
- negative terminal
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- mos
- electric discharge
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Abstract
The utility model discloses a kind of radiator structure of high-power discharge and recharge MOS groups, including：Charging MOS groups, electric discharge MOS groups, battery pack total negative terminal, load negative terminal, BMS housings, circuit board and fin；The upper surface of the circuit board is also welded with the battery pack total negative terminal and the load negative terminal；Upper surface electric discharge MOS groups and the upper surface charging MOS groups have been sequentially connected in series between the battery pack total negative terminal and the load negative terminal；The one side of the fin is attached at the surface of the lower surface electric discharge MOS groups and the lower surface charging MOS groups, and another side is attached at the bottom of the BMS housings.The utility model discloses a kind of radiator structure of high-power discharge and recharge MOS groups, compact conformation, deft design, the heat that will effectively and quickly can be produced in charging MOS groups and electric discharge MOS groups is by the way that in fin conductive to BMS housings and external environment, radiating effect is splendid；Closely arrangement, shortens current loop copper sheet path, improves the utilization rate of electric current.
Description
Technical field
The utility model is related to the field of radiating of discharge and recharge MOS groups, more particularly to a kind of high-power discharge and recharge MOS groups
Radiator structure.
Background technology
High-power electric instrument, energy-storage system, automobile starting/stopping system, it will usually the high current MOS for using more than two groups and going here and there
Group as battery set charge/discharge major loop switching device, for control major loop cut off with closure, to realize battery pack safety
Efficient charging/discharging function.
Because MOS groups have internal resistance, when its body there are larger charging and discharging currents to flow through for a long time, generation will be gathered
Heat, causes MOS groups hot.If the internal heat of MOS groups can not conduct in time shed, temperature has beyond its normal work
Effect scope, it will cause MOS to burn, more has the risk for burning plate.The method of traditional conventional radiating is to add tooth to heater members
Channel-shaped large volume fin, using the mode of heat loss through conduction for heater members radiate, works well, but at the same time, it is high-power
Fin has that complex structure, volume are larger, installation is inconvenient, many application inferior positions such as relatively costly, ultimately limit it in reality
Popularization and application in the occasion of border.
Utility model content
The purpose of this utility model is to overcome weak point of the prior art, there is provided a kind of high-power discharge and recharge MOS groups
Radiator structure.
The purpose of this utility model is achieved through the following technical solutions：
A kind of radiator structure of high-power discharge and recharge MOS groups, including：MOS groups, battery pack total negative terminal, load negative pole end
Son, BMS housings, circuit board and fin；
The battery pack total negative terminal, the load negative terminal and the MOS groups are welded in the circuit board；It is described
The MOS groups are in series between battery pack total negative terminal and the load negative terminal；
The one side of the fin is attached at the surface of the MOS groups, and another side is attached at the BMS housings.
As further preferred scheme, the MOS groups include electric discharge MOS groups and with filling that the electric discharge MOS groups are connected
Electric MOS groups.
Used as further preferred scheme, the charging MOS groups and the electric discharge MOS groups are connected in parallel including several
Metal-oxide-semiconductor, and be connected in series between the charging MOS groups and the electric discharge MOS groups of correspondence position.
Used as further preferred scheme, the electric discharge MOS groups include upper surface electric discharge MOS groups and lower surface electric discharge MOS
Group；Upper surface electric discharge MOS groups and the lower surface discharge MOS groups be symmetrically welded respectively in the circuit board up and down two
Face；
The charging MOS groups include upper surface charging MOS groups and lower surface charging MOS groups；The upper surface charging MOS groups
It is symmetrically welded respectively in the upper and lower surface of the circuit board with the lower surface charging MOS groups.
Used as further preferred scheme, the upper surface of the circuit board is also welded with the battery pack total negative terminal and institute
State load negative terminal；The upper surface is sequentially connected in series between the battery pack total negative terminal and the load negative terminal to put
Electric MOS groups and the upper surface charging MOS groups.
Used as further preferred scheme, the one side of the fin is attached at lower surface electric discharge MOS groups and described
The surface of lower surface charging MOS groups, another side is attached at the bottom of the BMS housings.
Used as further preferred scheme, the fin is radiating silica gel sheet.
Used as further preferred scheme, the BMS housings offer two through holes；The battery pack total negative terminal and institute
State two through holes that load negative terminal is arranged in the BMS housings respectively；
The part that the battery pack total negative terminal is raised in BMS housings is total with battery pack by high-power cable or copper bar
Negative terminal is connected；The part that the load negative terminal is raised in BMS housings is total negative with load by high-power cable or copper bar
End connection.
Used as further preferred scheme, the circuit board screws togather the bottom for being fixed on the BMS housings.
Used as further preferred scheme, the circuit board offers some screws, and the circuit board is worn by screw
The screw is fixed on the bottom of BMS housings.
The utility model compared to prior art advantage and have the beneficial effect that：
1st, the utility model discloses a kind of radiator structure of high-power discharge and recharge MOS groups, compact conformation, deft design,
The heat that will effectively and quickly can be produced in MOS groups passes through in fin conductive to BMS housings and external environment, radiating effect pole
It is good.
2nd, the major loop part in BMS housings of the present utility model is very short, compact conformation, reduces loop feature internal resistance, from
And the generation of heat is reduced, further improve the utilization rate of electric current.
3rd, the utility model is radiated using radiating silica gel sheet heat conduction and BMS shells, substitutes existing installation aluminium profiles fin
Mode, the volume of BMS can be effectively reduced, while certain production cost can be reduced.
4th, the utility model utilizes BMS shell heat loss through conduction, and principle is simple, be easily achieved, and can realize quickly having
The radiating of effect ground.
5th, radiating silica gel sheet of the present utility model has that thermal conductivity factor is high, dielectric strength is high and the elastic excellent spy such as good
Property, it is ensured that while heat transfer rate is high, meets safe spacing in BMS housings and circuit board between electronic device circuit and resistance to
Pressure request so that this radiator structure has preferable radiating effect.
6th, circuit board bottom discharge and recharge MOS groups surface of the present utility model attaches radiating silica gel sheet surface, radiating silica gel sheet
Surface attaches BMS housing bottoms, and the heat that MOS groups are produced quickly is transferred into BMS shells using heat-conduction principle, then distribute to
In environment residing for BMS shells.
7th, electric discharge MOS groups and charging MOS groups are separately positioned on the utility model the upper and lower surface of circuit board, and symmetrically
Arrangement, may be such that the circuit size flowed through in MOS groups arranged side by side is basically identical, and reduction causes the metal-oxide-semiconductor life-span because electric current is inconsistent
The appearance of different phenomenons.
8th, the utility model closely arranges electric discharge MOS groups and charging MOS groups, shortens current loop copper sheet path, raising
The utilization rate of electric current.
Brief description of the drawings
Fig. 1 is the cut-away view of the radiator structure of the high-power discharge and recharge MOS groups of embodiment；
Fig. 2 is the top view of the radiator structure of the high-power discharge and recharge MOS groups of embodiment.
Specific embodiment
For the ease of understanding the utility model, the utility model is more fully retouched below with reference to relevant drawings
State.Better embodiment of the present utility model is given in accompanying drawing.But, the utility model can come in many different forms
Realize, however it is not limited to embodiments described herein.On the contrary, the purpose for providing these implementation methods is to make to this practicality newly
It is more thorough comprehensive that the disclosure of type understands.
It should be noted that when element is referred to as " being fixed on " another element, it can directly on another element
Or can also there is element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or may be simultaneously present centering elements.Term as used herein " vertical ", " level ", " left side ",
For illustrative purposes only, it is unique implementation method to be not offered as " right side " and similar statement.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with technology of the present utility model is belonged to
The implication that the technical staff in domain is generally understood that is identical.It is herein to be in term used in the description of the present utility model
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein " and/or " bag
Include the arbitrary and all of combination of one or more related Listed Items.
Embodiment
Fig. 1 is referred to, Fig. 1 is the cut-away view of the radiator structure of the high-power discharge and recharge MOS groups of embodiment.Join simultaneously
Fig. 2 is read, Fig. 2 is the top view of the radiator structure of the high-power discharge and recharge MOS groups of embodiment.
The utility model provides a kind of radiator structure 10 of high-power discharge and recharge MOS groups, including：MOS groups 100, battery pack
Total negative terminal 200, load negative terminal 300, BMS housings 400, circuit board 500 and fin 600.In fig. 1 and 2, P- is
Load negative terminal；B- is battery pack total negative terminal.
Battery pack total negative terminal 200, load negative terminal 300 and MOS groups 100 are welded in circuit board 500；Battery pack is total
MOS groups are in series between negative terminal 200 and load negative terminal 300；The one side of fin 600 is attached at the table of MOS groups 100
Face, another side is attached at BMS housings 400.MOS groups 100, circuit board 500, battery pack total negative terminal 200 and load negative terminal
300 are contained in BMS housings 400, and circuit board 500 is fixedly installed in BMS housings 400.Specifically, BMS housings 400 are gold
Category housing.
It is noted that the fin 600 is radiating silica gel sheet.Specifically, the thickness of the radiating silica gel sheet is 1mm
~3mm.In the present embodiment, the thickness of radiating silica gel sheet is 2mm.The radiating silica gel sheet is attached at the bottom of BMS housings 400
Portion, and can not be with the presence of suture.
Further, MOS groups 100 include electric discharge MOS groups 110 and the charging MOS groups 120 connected with electric discharge MOS groups 110.
Charging MOS groups 120 and electric discharge MOS groups 110 are including the metal-oxide-semiconductor that several are connected in parallel, and charging MOS groups 120 and correspondence position
It is connected in series between the electric discharge MOS groups 110 put.
Charging MOS groups, electric discharge MOS groups are surface mount large-power MOS part, can bear high current and pass through, uniform welding
The top and bottom of circuit board, and symmetry arrangement, i.e. charging MOS groups bottom surface are installed on for charging MOS groups, electric discharge MOS groups bottom surface is to put
Electric MOS groups, may be such that the size of current flowed through in electric current MOS arranged side by side is basically identical, and reduction causes the device longevity because electric current is inconsistent
Order the appearance of different phenomenons.
Charging MOS groups and electric discharge MOS groups are connected in series in welding battery pack total negative terminal (B-), load negative terminal (P-)
Between, and compact, short distance arrangement each other, charging MOS groups or electric discharge MOS groups are one or more than one MOS
Pipe is connected in parallel composition, and the two quantity is identical.
Electric discharge MOS groups 110 include that upper surface electric discharge MOS group 112 and lower surface discharge MOS groups 114；Discharge MOS for upper surface
Group 112 and lower surface electric discharge MOS groups 114 are respectively symmetrically the upper and lower surface for being welded in circuit board 500.Charging MOS groups 120 include upper
Surface charging MOS groups 122 and lower surface charging MOS groups 124；124 points of upper surface charging MOS groups 122 and lower surface charging MOS groups
It is not symmetrically welded in the upper and lower surface of circuit board 500.
The utility model closely arranges electric discharge MOS groups and charging MOS groups, shortens current loop copper sheet path, and raising is electric
The utilization rate of stream.
The upper surface of circuit board 500 is also welded with battery pack total negative terminal 200 and load negative terminal 300；Battery pack is total
Upper surface electric discharge MOS groups 112 and upper surface charging MOS groups have been sequentially connected in series between negative terminal 200 and load negative terminal 300
122。
The one side of fin 600 is attached at the surface of lower surface electric discharge MOS groups 114 and lower surface charging MOS groups 124, separately
Simultaneously it is attached at the bottom of BMS housings 400.
The lower surface electric discharge MOS groups 114 and lower surface charging MOS groups 124 of the bottom of circuit board 500 can operationally be produced
Heat, can be transferred to radiating silica gel sheet by the case surface of MOS device, and heat can be quickly transferred to BMS by radiating silica gel sheet
The bottom of housing 400, then by heat heat transfer to whole BMS housings 400, the heat on BMS housings 400 can be by surface of shell
In environment where being dispersed into housing, radiation processes are completed.
Further, BMS housings 400 offer two through holes；Battery pack total negative terminal 200 and load negative terminal 300
Two through holes of BMS housings 400 are arranged in respectively；Battery pack total negative terminal 200 is raised in the part of BMS housings 400 by big
Power cable or copper bar are connected with total negative terminal of battery pack；The part that load negative terminal 300 is raised in BMS housings 400 passes through
High-power cable or copper bar are connected with total negative terminal of load.
It should also be noted that circuit board 500 screws togather the bottom for being fixed on BMS housings 400.Circuit board 500 offers some
Screw, circuit board 500 wears the bottom that screw is fixed on BMS housings 400 by screw.Four angles of the circuit board 500 point
A screw is not provided with, and each described screw fixing circuit board 500 is worn by four screws.
Referring to Fig. 2.The radiator structure of the high-power discharge and recharge MOS groups also includes collection and control module 700,
The collection and control module 700 are integrated on the circuit board 500.It is described collection and control module 700 be used for signal acquisition,
Charging MOS groups and the conducting of electric discharge MOS groups are controlled with shut-off.
Referring to Fig. 1, the BMS housings offer two through holes；The battery pack total negative terminal and the load
Negative terminal is arranged in two through holes of the BMS housings respectively.Specifically, the battery pack total negative terminal is raised in BMS shells
The part of body is connected by high-power cable or copper bar with total negative terminal of battery pack；The load negative terminal is raised in BMS shells
The part of body is connected by high-power cable or copper bar with total negative terminal of load.
Have between the BMS housings of the through hole and the battery pack total negative terminal or the load negative terminal 400
Certain default safe distance.BMS housings are not contacted with battery pack total negative terminal or load negative terminal, it is ensured that electric current will not
On conduction to BMS housings.It is noted that the predeterminable range is 2mm~3mm.Upper surface charging MOS groups and upper surface are discharged
The heat of MOS groups can be conducted to BMS housings by circuit board, radiating silica gel sheet.
The above implementation method only expresses several embodiments of the present utility model, and its description is more specific and detailed
Carefully, but can not therefore and be interpreted as the limitation to the utility model the scope of the claims.It should be pointed out that general for this area
For logical technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these are all
Belong to protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of radiator structure of high-power discharge and recharge MOS groups, it is characterised in that including：MOS groups (100), the total negative terminal of battery pack
Sub (200), load negative terminal (300), BMS housings (400), circuit board (500) and fin (600)；
The battery pack total negative terminal (200), load negative terminal (300) and the MOS groups (100) are welded in described
Circuit board (500)；The MOS groups are in series between the battery pack total negative terminal (200) and load negative terminal (300)
(100)；
The one side of the fin (600) is attached at the surface of the MOS groups (100), and another side is attached at the BMS housings
(400)。
2. the radiator structure of high-power discharge and recharge MOS groups according to claim 1, it is characterised in that the MOS groups
(100) including electric discharge MOS groups (110) and charging MOS groups (120) connected with electric discharge MOS groups (110).
3. the radiator structure of high-power discharge and recharge MOS groups according to claim 2, it is characterised in that the charging MOS groups
And electric discharge MOS groups (110) is including the metal-oxide-semiconductor that several are connected in parallel, and charging MOS groups (120) and right (120)
It is connected in series between the electric discharge MOS groups (110) for answering position.
4. the radiator structure of high-power discharge and recharge MOS groups according to claim 3, it is characterised in that
Electric discharge MOS groups (110) includes upper surface electric discharge MOS groups (112) and lower surface electric discharge MOS groups (114)；The upper table
Face electric discharge MOS groups (112) and lower surface electric discharge MOS groups (114) are respectively symmetrically and are welded in the upper and lower of the circuit board (500)
Two sides；
The charging MOS groups (120) include upper surface charging MOS groups (122) and lower surface charging MOS groups (124)；The upper table
Face charging MOS groups (122) and the lower surface charging MOS groups (124) are respectively symmetrically and are welded in the upper and lower of the circuit board (500)
Two sides.
5. the radiator structure of high-power discharge and recharge MOS groups according to claim 4, it is characterised in that the circuit board
(500) upper surface is also welded with the battery pack total negative terminal (200) and load negative terminal (300)；The battery
Upper surface electric discharge MOS groups (112) has been sequentially connected in series between group total negative terminal (200) and load negative terminal (300)
With the upper surface charging MOS groups (122).
6. the radiator structure of high-power discharge and recharge MOS groups according to claim 4, it is characterised in that the fin
(600) one side is attached at the surface of lower surface electric discharge MOS groups (114) and the lower surface charging MOS groups (124), separately
Simultaneously it is attached at the bottom of the BMS housings (400).
7. the radiator structure of high-power discharge and recharge MOS groups according to claim 6, it is characterised in that the fin
(600) it is radiating silica gel sheet.
8. the radiator structure of high-power discharge and recharge MOS groups according to claim 1, it is characterised in that the BMS housings
(400) two through holes are offered；The battery pack total negative terminal (200) and load negative terminal (300) are arranged in respectively
Two through holes of the BMS housings (400)；
The part that the battery pack total negative terminal (200) is raised in BMS housings (400) passes through high-power cable or copper bar and battery
Total negative terminal connection of group；Load negative terminal (300) be raised in the part of BMS housings (400) by high-power cable or
Copper bar is connected with total negative terminal of load.
9. the radiator structure of high-power discharge and recharge MOS groups according to claim 1, it is characterised in that the circuit board
(500) bottom for being fixed on the BMS housings (400) is screwed togather.
10. the radiator structure of high-power discharge and recharge MOS groups according to claim 1, it is characterised in that the circuit board
(500) some screws are offered, the circuit board (500) wears the bottom that the screw is fixed on BMS housings (400) by screw
Portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621436316.6U CN206294470U (en) | 2016-12-26 | 2016-12-26 | A kind of radiator structure of high-power discharge and recharge MOS groups |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621436316.6U CN206294470U (en) | 2016-12-26 | 2016-12-26 | A kind of radiator structure of high-power discharge and recharge MOS groups |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206294470U true CN206294470U (en) | 2017-06-30 |
Family
ID=59154888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621436316.6U Active CN206294470U (en) | 2016-12-26 | 2016-12-26 | A kind of radiator structure of high-power discharge and recharge MOS groups |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206294470U (en) |
-
2016
- 2016-12-26 CN CN201621436316.6U patent/CN206294470U/en active Active
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