CN206279283U - The quartz socket tube of high leakproofness mercury cadmium telluride vapour phase epitaxy - Google Patents
The quartz socket tube of high leakproofness mercury cadmium telluride vapour phase epitaxy Download PDFInfo
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- CN206279283U CN206279283U CN201621280035.6U CN201621280035U CN206279283U CN 206279283 U CN206279283 U CN 206279283U CN 201621280035 U CN201621280035 U CN 201621280035U CN 206279283 U CN206279283 U CN 206279283U
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- quartz
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- inner pipe
- outer tube
- plug
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Abstract
This patent discloses a kind of quartz socket tube of high leakproofness mercury cadmium telluride vapour phase epitaxy, quartz outer tube, quartzy position-limiting tube and the quartz inner pipe and quartz plug that the quartz socket tube is made up of 99.99999% high purity quartz material are constituted.Quartz outer tube is that one end is closed, the cylindrical structure of one end open, and openend is connected with closing door.Quartzy position-limiting tube is cylinder cup-like structure, is placed on inside quartz outer tube, near blind end.Quartz inner pipe is one end closing, cylindrical structure of the one end with vertebra degree opening.Quartz plug also has the hollow frosted mouthful stopper with taper cylinder, is matched with quartz inner pipe, and quartz plug is connected with the stainless steel tube with spring.Quartz inner pipe and quartz plug are both placed in inside quartz outer tube, near closing door.Place the graphite boat that can carry out vapour phase epitaxy in quartz inner pipe inside.The quartz socket tube is used for mercury cadmium telluride vapor phase epitaxial growth, realizes the mercury cadmium telluride vapor phase epitaxial growth of high leakproofness, rapid temperature rise and drop.
Description
Technical field
This patent is related to a kind of quartz socket tube with high leakproofness for mercury cadmium telluride vapour phase epitaxy, and in particular to a kind of
Quartz socket tube, it is applied to the vapor phase epitaxial growth of infrared mercury cadmium telluride, is particularly well-suited to different epitaxial temperatures, different size
Substrate, multi-disc mercury cadmium telluride vapor phase epitaxial growth.The high leakproofness design of the quartz socket tube can be during vapour phase epitaxy
Effectively control Hg losses, the method can apply to shortwave, medium wave and long wave mercury cadmium telluride isothermal vapour phase epitaxy field.
Background technology
It is by French Cohen-Solal [Cohen-Solal G.and initially with isothermal vapor phase epitaxy technique (ISOVPE)
Marfaing,Y.,Transport of photocarriers in Cdx Hg1–xTe graded-gap structures,
Solid State Electron.11,1131-1147 (1968)] et al. design.Growth course is first in thick cadmium telluride
The nearly balance evaporation at constant temperature of telluride mercury is carried out on substrate, the counterdiffusion being then deposited between layer and substrate can just generate variable
The mercury cadmium telluride of band gap.The growth of mercury cadmium telluride vapour phase epitaxy is the growth that film is carried out according to isothermal vapour phase epitaxy principle
[S.H.Shin,E.R.Gertner,J.G.Pasko,et al.Isothermal vapor-phase epitaxy of
HgCdTe on CdTe and Al2O3substrates[J].J.Appl.Phys.,57(10):4721-4726(1985)].Ripple
Blue researcher [Piotrowski, J.and Piotrowski, A., Uncooled infrared photodetectors in
Poland, Proc.SPIE 5957,59570K (2005)] replace cadmium telluride body material with the cadmium telluride thin layer of synthesis.Utilize
Vacuum evaporation technique deposits growth telluride on low cost, the substrate being readily obtained (such as mica, silicon, sapphire and other materials)
Cadmium epitaxial material, then deposits certain thickness telluride mercury using constant temperature vapor-phase epitaxy, makes them anti-by certain technique
Answer and generate uniform mercury cadmium telluride.These materials are used for preparation work in medium-wave infrared (MWIR) closely at room temperature, long wave
Infrared (LWIR) light guide, photomagnetoelectric and photovoltaic detector.First long wave for working at high temperature (emblems of ≈ 10.6 rice) detector
Come out in 1972 [Piotrowski, J., Electrical and photoelectric properties of Hg1-
XCdxTe films, Thesis, WAT, Warsaw (1973) (in Polish)], it may be that first is commercialized, using
The Infrared Detectors that in mixed substrates prepared by extension Hg1-xCdxTe materials.
Research team [Becla P.and the Placzek-Popko E., Electrical of Wroclaw technology universities
properties of infrared photovoltaic Hg1–xCdxTe detectors,Infrared Phys.21,
323-332 (1981)] it is using the quartz ampoule constant temperature vapor-phase epitaxy growth tellurium cadmium mercury epitaxial layer material of closing.Using this
Technology has obtained the epitaxial film materials of graded component to carry out extensive scientific research.N-on-p is diffuseed to form using mercury to tie, system
It is standby gone out high-quality photovoltaic detector.
The problem for being related to Hg to lose in isothermal vapour phase epitaxy, particularly in open pipe growing system, because seal is poor, has
When vapour phase epitaxy during occur that growth technique is difficult to repeat, situations such as epitaxial film melt back, heat erosion.And control this problem
Key factor be quartz ampoule seal design it is ingenious, can effectively reduce the leakage of Hg atoms, can ensure that again will not be by
Height is pressed through in Hg cause blast.Therefore, high-purity, high leakproofness quartz socket tube a design determines the success or failure of vapour phase epitaxy.
This patent is intended using mercury cadmium telluride vapor phase growth techniques, and tellurium is realized with the high leakproofness quartz socket tube of this patent patent
The stabilization growth of cadmium mercury epitaxy technique, for the growth of high-quality tellurium cadmium mercury epitaxial material provides a kind of effective means.
The content of the invention
This patent purpose is to provide a kind of quartz socket tube of high leakproofness tellurium cadmium mercury epitaxial growth, solves outside mercury cadmium telluride gas phase
The problem of Hg losses in epitaxial growth.
The method of this patent is：By designing different size, different structure quartz outer tube, quartzy position-limiting tube and quartz inner pipe
Filled in quartz, realize the vapor phase epitaxial growth of high-quality mercury cadmium telluride.
Patent content is as follows：The high leakproofness quartz socket tube concrete structure of the tellurium cadmium mercury epitaxial growth such as institute of accompanying drawing 1~5
Show, it is made up of quartz outer tube 1, quartzy position-limiting tube 2 and quartz inner pipe 3 and quartz 4 four parts of plug, and these parts are used
99.99999% high purity quartz makes.
Described quartz outer tube 1 is one end closing, and the cylindrical structure of one end open, openend is connected with closing door 6, wall
Thick 5mm.The size of quartz outer tube 1 can be set according to the size (quartz inner pipe 2 is controlled within diameter 60mm) of quartz inner pipe 3
Meter, has an elongated built-in tubule in blind end bottom, can place thermocouple, and the temperature during vapour phase epitaxy is supervised
Control.
The quartzy position-limiting tube 2 is cylinder cup-like structure, is placed on inside quartz outer tube 1, near blind end, wall thickness
4mm.The position inside the quartz outer tube 1 of quartz inner pipe 3 is controlled by the length of quartzy position-limiting tube 2.
Described quartz inner pipe 3 is one end closing, and cylindrical structure of the one end with vertebra degree opening, wall thickness 3mm is opened
Mouth vertebra degree is 10 °.The graphite boat 5 of vapour phase epitaxy is placed in quartz inner pipe 3.
Described quartz plug 4 is that also have the hollow frosted mouthful stopper with taper cylinder, is matched with quartz inner pipe 3, stone
The vertebra degree of English plug 4 is 10 °, and internal void is divided into diameter 40mm, 75mm long, and the stainless steel 7 with spring is placed at this, is easy to
Quartz inner pipe 3 is sealed and opened during vapour phase epitaxy.
This patent high leakproofness tellurium cadmium mercury epitaxial growth quartz socket tube advantage be：It can be solved outside mercury cadmium telluride gas phase
Prolong in film growth Hg losses and the problems such as due to the bad heat erosion for causing of system seal, melt back.The method can be answered
For shortwave, medium wave and long wave mercury cadmium telluride isothermal vapour phase epitaxy field.
Brief description of the drawings
Fig. 1 is quartz socket tube general assembly structure chart.
Fig. 2 is the structure chart of quartz outer tube 1.
Fig. 3 is the quartzy structure chart of position-limiting tube 2.
Fig. 4 is the structure chart of quartz inner pipe 3.
Fig. 5 is quartz 4 structure charts of plug.
Specific embodiment
By taking the quartz socket tube of mercury cadmium telluride vapour phase epitaxy as an example.
Detailed process is as follows：
Fig. 1 is quartz socket tube general assembly structure chart, and the quartz socket tube includes 5 parts：Quartz outer tube 1, quartzy position-limiting tube 2,
Quartz inner pipe 3, quartz plug 4, graphite boat 5, closing door 6.Quartz outer tube 1 is one end closing, and the cylindrical structure of one end open is opened
Mouth end is connected with closing door.Quartzy position-limiting tube 2 is cylinder cup-like structure, is placed on inside quartz outer tube 1, near closing door 6.
Quartz inner pipe 3 is one end closing, cylindrical structure of the one end with vertebra degree opening.Quartz plug 4 also has band taper cylinder
Hollow frosted mouthful stopper, matched with quartz inner pipe 3.Quartz inner pipe 3 and quartz plug 4 are both placed in inside quartz outer tube 1, are leaned on
Nearly closing door 6.Place the graphite boat 5 that can carry out vapour phase epitaxy in the inside of quartz inner pipe 3.
2 Fig. 2 are the structure charts of quartz outer tube 1, the quartz outer tube 1 overall length 850mm, one end closing, one end open.External diameter
120mm, internal diameter 110mm, wall thickness 5mm, are having an external hollow tube, 532mm long, in hollow tube by blind end quartz bottom of the tube
Footpath 7mm, external diameter 10mm, this hollow tube can place thermocouple, the temperature of the bottom of graphite boat 5 in monitor in real time epitaxial process.
3 Fig. 3 are the structure charts of quartzy position-limiting tube 2, the quartzy position-limiting tube 2 overall length 310mm, external diameter 60mm, internal diameter 52mm, effectively
Quartz inner pipe 3 is controlled in the position of quartz outer tube 1, for the technology stability of vapour phase epitaxy provides possibility.
4 Fig. 4 are the structure charts of quartz inner pipe 3, the quartz inner pipe 3 overall length 285mm, one end closing, one end frosted mouthful opening.Outward
Footpath 70mm, internal diameter 64mm, wall thickness 3mm, length 50mm at frosted mouthful, be open 10 degree of taper.Quartz inner pipe 3 is successively placed on quartzy limit
The side of position pipe 2, near the openend of quartz outer tube 1.Graphite boat 5 is placed in quartz inner pipe 3.
5 Fig. 5 are quartz 4 structure charts of plug, and quartz plug 4 is to coordinate quartz inner pipe 3 to use, and is also adopted by frosted design, is easy to
Ensure the seal of quartz inner pipe 3.Quartz 4 total length 90mm of plug, one end conical design is filled in inside quartz inner pipe 3, and taper is
10 degree, matched with quartz inner pipe 3, other end hollow design, inner hollow diameter 40mm, the stainless-steel pipe with spring is placed, with reality
To the sealing process of quartz inner pipe 3 during present vapour phase epitaxy, in addition, the stainless steel tube 7 with spring can be when mercury pressure be high
High-pressure atmosphere is effectively unloaded, and then avoids the blast during vapour phase epitaxy.
Claims (2)
1. a kind of quartz socket tube of high leakproofness mercury cadmium telluride vapour phase epitaxy, including quartz outer tube (1), quartzy position-limiting tube (2) and stone
English inner tube (3) and quartz plug (4), it is characterised in that：
Described quartz outer tube (1) is one end closing, the cylindrical structure of one end open, wall thickness 5mm；It is useful in blind end bottom
To place the recess of thermocouple；
Described quartzy position-limiting tube (2) is cylinder cup-like structure, wall thickness 4mm；
Described quartz inner pipe (3) is one end closing, cylindrical structure of the one end with vertebra degree opening, wall thickness 3mm, opening vertebra degree
It it is 10 °, diameter is less than 60mm；
Described quartz plug (4) is that have the hollow frosted mouthful stopper with taper cylinder, and vertebra degree is 10 °, interior hollow section
It is diameter 40mm, 75mm long；
The quartzy position-limiting tube (2) is placed on quartz outer tube (1) inside, and near blind end, quartz inner pipe (3) is also placed on quartz
Outer tube (1) is internal, near openend, controls quartz inner pipe (3) interior in quartz outer tube (1) by the length of quartzy position-limiting tube (2)
Position；Described quartz plug (4) is matched with quartz inner pipe (3), and quartz fills in (4) interior hollow section and the stainless steel with spring
Pipe (7) is connected, and is easy to during vapour phase epitaxy that quartz inner pipe (3) is sealed and opened.
2. the quartz socket tube of high leakproofness mercury cadmium telluride vapour phase epitaxy according to claim 1, it is characterised in that：Described stone
English outer tube (1), quartzy position-limiting tube (2) and quartz inner pipe (3) and quartz plug (4) use 99.99999% high purity quartz system
Make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621280035.6U CN206279283U (en) | 2016-11-25 | 2016-11-25 | The quartz socket tube of high leakproofness mercury cadmium telluride vapour phase epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621280035.6U CN206279283U (en) | 2016-11-25 | 2016-11-25 | The quartz socket tube of high leakproofness mercury cadmium telluride vapour phase epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206279283U true CN206279283U (en) | 2017-06-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621280035.6U Withdrawn - After Issue CN206279283U (en) | 2016-11-25 | 2016-11-25 | The quartz socket tube of high leakproofness mercury cadmium telluride vapour phase epitaxy |
Country Status (1)
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| CN (1) | CN206279283U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435718A (en) * | 2016-11-25 | 2017-02-22 | 中国科学院上海技术物理研究所 | Quartz sleeve for high-airtightness tellurium cadmium mercury vapor phase epitaxy |
| CN112014028A (en) * | 2020-08-27 | 2020-12-01 | 北京智创芯源科技有限公司 | Quartz tube assembly and vacuum inspection method thereof |
-
2016
- 2016-11-25 CN CN201621280035.6U patent/CN206279283U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435718A (en) * | 2016-11-25 | 2017-02-22 | 中国科学院上海技术物理研究所 | Quartz sleeve for high-airtightness tellurium cadmium mercury vapor phase epitaxy |
| CN112014028A (en) * | 2020-08-27 | 2020-12-01 | 北京智创芯源科技有限公司 | Quartz tube assembly and vacuum inspection method thereof |
| CN112014028B (en) * | 2020-08-27 | 2021-04-13 | 北京智创芯源科技有限公司 | Quartz tube assembly and vacuum inspection method thereof |
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| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170627 Effective date of abandoning: 20180814 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20170627 Effective date of abandoning: 20180814 |