CN206259318U - Ion neutralization reactor and ion implantation equipment - Google Patents
Ion neutralization reactor and ion implantation equipment Download PDFInfo
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- CN206259318U CN206259318U CN201621363158.6U CN201621363158U CN206259318U CN 206259318 U CN206259318 U CN 206259318U CN 201621363158 U CN201621363158 U CN 201621363158U CN 206259318 U CN206259318 U CN 206259318U
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- ion
- blocking device
- electronic blocking
- neutralization reactor
- filament
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Abstract
The utility model provides a kind of ion neutralization reactor and ion implantation equipment, the ion neutralization reactor includes secondary device, electronic blocking device, wherein, the secondary device includes filament and metal sleeve, the filament two ends are provided with filament supply, and the metal sleeve is placed on the filament periphery；The electronic blocking device is located at secondary device outside, including Part I and Part II, opening is provided with the Part I, the opening is corresponding with the electron emission sites of the secondary device, and the ion beam passes through between the electronic blocking device Part I and Part II.Using ion neutralization reactor provided by the utility model, electronics can be produced to neutralize the positive charge entrained by ion beam in the case where any gas is not passed through, it is possible to obtain enough secondary electrons as required.
Description
Technical field
The utility model belongs to semiconductor manufacturing equipment field, it is more particularly to a kind of for neutralizing ion implantation process in
The ion neutralization reactor and ion implantation equipment of the positive charge entrained by ion beam.
Background technology
In semicon industry, ion implanting has become a kind of important doping skill in microelectronic technique now
Art.After high energy positive ion injection wafer in ion implantation equipment, by the positively charged accumulation of cation can cause crystalline substance
The positively charged electric discharge of circular surfaces, so as to destroy whole injection technology process, so general ion implantation device can install one
The device of electronics can be produced to neutralize these ions, this electronic installation is referred to as PFS (Plasma Flood system).PFS
Generation principle be to the filament heating being connected with inside gas cavity, allow filament produce with a large amount of electronics plasma, this
A little plasmas can enter ion beam mutation pipeline (tube) formation electron cloud and take crystal column surface neutralization to by energetic ion.
Common way is at present, and logical high current allows the filament starting the arc, and is passed through argon gas, the thermoelectron excited using filament Hong
Hit gas and produce the plasma-based (plasma) with a large amount of secondary electrons.
And during ion implanting, in order to ensure the cleanliness factor of injection and the accuracy of dosage, it is desirable to as far as possible in vacuum ring high
Be implanted into border, can PFS must be passed through gas produce plasma, vacuum environment can be so destroyed, for example, in argon flow amount
It is set as 1.2sccm, adopts in this way, the vacuum of ion implanting environment can be from 5E-7torr to the 1.5E- of obstructed argon gas
5torr, so as to influence very much the calculating of dopant dose, and argon gas is passed through closely wafer, can be produced in crystal column surface
Defect (defect).
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of ion neutralization reactor
And ion implantation equipment, for solving to need to be passed through argon gas and cause to neutralize the positive charge in injection ion in the prior art
Reduction ion implant systems vacuum and crystal column surface produce defect problem.
In order to achieve the above objects and other related objects, the utility model provides a kind of ion neutralization reactor, in being used for
With the positive charge entrained by ion implantation process intermediate ion beam, the ion neutralization reactor include secondary device,
Electronic blocking device,
The secondary device includes filament and metal sleeve, wherein, the filament two ends are provided with filament electricity
Source, the metal sleeve is placed on the filament periphery；
The electronic blocking device is located at secondary device outside, including Part I and Part II,
Wherein, opening, the electron emission sites pair being open with the secondary device are provided with the Part I
Should；
The ion beam passes through between the electronic blocking device Part I and Part II, and arrival receives ion
The wafer of injection.
As a kind of preferred scheme of the present utility model, additional power source is provided between the filament and the metal sleeve,
Wherein, the additional power source negative pole connects the filament supply positive pole, and the additional power source positive pole connects the metal sleeve.
Used as a kind of preferred scheme of the present utility model, the electronic blocking device Part I is connected with the first power supply,
The electronic blocking device Part II is connected with second source.
Used as a kind of preferred scheme of the present utility model, first power supply and the second source have the adjustment of 5V empty
Between.
As a kind of preferred scheme of the present utility model, set between the electronic blocking device Part I and Part II
The 3rd power supply is equipped with, wherein, the negative pole of the 3rd power supply connects the electronic blocking device Part I, the 3rd power supply
Positive pole connect the electronic blocking device Part II.
Used as a kind of preferred scheme of the present utility model, the voltage of the 3rd power supply is adjustable.
As a kind of preferred scheme of the present utility model, between the electronic blocking device Part II and Part I
Felt pad is provided with, the Part I is dielectrically separated from the Part II.
Used as a kind of preferred scheme of the present utility model, the felt pad is alundum (Al2O3) felt pad.
As a kind of preferred scheme of the present utility model, between the Part I and Part II of the electronic blocking device
It is fixedly connected by insulating screw.
As a kind of preferred scheme of the present utility model, the Part I of the electronic blocking device and the material of Part II
Expect to be graphite.
The utility model also provides a kind of ion implantation equipment, and the ion implantation equipment is included in above-mentioned any scheme
A kind of ion neutralization reactor.
As described above, ion neutralization reactor of the present utility model and ion implantation equipment, have the advantages that：
1. electronics can be produced in the case where any gas is not passed through to neutralize the positive charge of ion beam carrying, and is avoided
Therefore the defect that crystal column surface is produced caused by；
2. enough secondary electrons can be produced according to actual demand.
Brief description of the drawings
Fig. 1 and Fig. 2 are shown as the structural representation of the ion neutralization reactor provided in the utility model embodiment one.
Fig. 3 is shown as the knot of the electronic blocking device in the ion neutralization reactor provided in the utility model embodiment one
Structure schematic diagram.
Component label instructions
1 second electron emitting device
11 filaments
12 metal sleeves
13 filament supplys
14 additional power sources
2 electronic blocking devices
21 Part I
211 openings
22 Part II
23 felt pads
24 first power supplys
25 second sources
26 the 3rd power supplys
3 ion beams
Specific embodiment
Implementation method of the present utility model is illustrated below by way of specific instantiation, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages of the present utility model and effect easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With, without departing from it is of the present utility model spirit under carry out various modifications or alterations.
Refer to Fig. 1 to Fig. 3.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, though when only display is with relevant component in the utility model rather than according to actual implementation in diagram
Component count, shape and size are drawn, and the kenel of each component, quantity and ratio can be a kind of random changing during its actual implementation
Become, and its assembly layout kenel be likely to it is increasingly complex.
Embodiment one
As shown in FIG. 1 to 3, the utility model provides a kind of ion neutralization reactor, for neutralizing ion implantation process
Positive charge entrained by intermediate ion beam, the ion neutralization reactor includes secondary device 1 and electronic blocking device
2,
The secondary device 1 includes filament 11 and metal sleeve 12, wherein, the two ends of the filament 11 are provided with
Filament supply 13, the metal sleeve 12 is placed on the periphery of the filament 11.During secondary electron is produced, lamp is used first
The mode of silk heating produces primary electron, and then, in the presence of the primary electron, substantial amounts of secondary electron can be by the gold
Category sleeve 12 is ejected.It should be noted that secondary device 12 described in this manual is intended only as example,
Can be using the secondary device of any other form of its phase same-action in actual example, metal sleeve can as described
Think U-shaped sleeve, or rectangular sleeve.Furthermore it is preferred that in the present embodiment, the filament supply 13 uses low electricity
Pressure, high current, specifically, voltage is 2V, electric current is 300A.
The electronic blocking device 2 is located at the outside of the secondary device 1, including Part I 21 and second
Points 22, wherein, it is provided with opening 211 on the Part I, the electronics of the opening 211 and the secondary device
Transmitting position correspondence.The position of secondary can be any position of the metal sleeve 12, in the present embodiment, preferably
It is the bottom of the metal sleeve 12, opening 211 and the metal sleeve 12 of the Part I 21 of the electronic blocking device 2
Bottom correspondence so that the secondary electron launched by it is described opening 211 smoothly enter the electronic blocking device 2 in, edge
Perpendicular to ion beam direction motion, and play a role.In addition, in actual example, the electronic blocking device 2 can be two pieces
The flat board of parallel interval arrangement, wherein, the Part I 21 is the flat board near the metal sleeve 12, the Part II
22 is the flat board away from the metal sleeve 12；The electronic blocking device 2 can also be cylindrical tube or rectangle column jecket, its
In, the Part I 21 is the cylindrical tube or the rectangle column jecket near the part of the metal sleeve 12, Su Suoshu
Part II 22 is the part of the cylindrical tube or the rectangle column jecket away from the metal sleeve 12.
The ion beam 3 passes through between the Part I 21 and Part II 22 of the electronic blocking device 2, and reaches
Receive the wafer of ion implanting.
As an example, additional power source 14 is provided between the filament 11 and the metal sleeve 12, wherein, the outer power-up
The negative pole in source 14 connects the positive pole of the filament supply 13, and the positive pole of the additional power source 14 connects the metal sleeve 12.By
In the primary electron limited amount that the filament 11 is produced, additional power source is set between the filament 11 and the metal sleeve 12
14, can so ensure that the primary electron that the filament is produced is attracted to come above metal sleeve substantially, powered metal
Sleeve can be also heated, and substantial amounts of secondary electron will be produced to be excited out.Specifically, the present embodiment kind, the outer power-up
The voltage in source 14 keeps 20V.
Refering to Fig. 1, as an example, the Part I 21 of the electronic blocking device 2 and the electronic blocking device second
Added with voltage on part 22, wherein, the Part I 21 of the electronic blocking device 2 connects the first power supply 25, it is preferable that described
First power supply 25 is that the Part I 21 provides negative voltage, it is further preferable that first power supply 25 includes positive pole and negative pole,
The negative pole of first power supply 25 is connected with the Part I 21, the plus earth of first power supply 25；The electronics
Retention device Part II 22 connects second source 26, it is preferable that the second source is that the Part II 22 provides positive electricity
Pressure, it is further preferable that the second source 26 includes positive pole and negative pole, the positive pole of the second source 26 and the Part II
22 are connected, the negative pole ground connection of the second source 26；Said structure can ensure that secondary electron goes out from the metal sleeve 12
The electronic blocking device 2 can be entered after coming, electron cloud is formed, secondary electron can pass through ion beam with more multi-energy,
Ensure the realization of secondary electron principle " how much is ion needs, with regard to how many ion to crystal column surface " out, specifically, this reality
It is 30V or so to apply the voltage of first power supply 25 that the Part I 21 of electronic blocking device described in example 2 is connected.
As an example, first power supply 25 and the electronic blocking of the connection of Part I 21 of the electronic blocking device 2
The second source 26 of the connection of Part II 22 of device 2 has the adjustment space of 5V, because maintenance can cause to produce electronics every time
Ability it is different, so in order to substantially keep fluctuation little in ion implantation process, described two voltages can be allowed to have
The adjustment space of 5V.
Refering to Fig. 2, as an example, being provided between the Part I 21 and Part II 22 of the electronic blocking device 2
3rd power supply 27, wherein, the negative pole of the 3rd power supply 27 connects the electronic blocking device Part I 21, the 3rd electricity
The positive pole in source connects the electronic blocking device Part II 22.It can not only be produced and first power supply 25 and described
The identical effect of two power supply 26, and its operation is more convenient and flexible.
As an example, in certain embodiments, the voltage of the 3rd power supply 27 is adjustable.This is caused according to the utility model
Ion neutralization reactor have very big flexibility.In actual example, the 3rd power supply 27 includes a slip variable resistance
Device is adjusting the voltage of the 3rd power supply 27.
As an example, felt pad 24 is provided between the electronic blocking device Part II 22 and Part I 21,
It is dielectrically separated from the Part II 22 with by the Part I 21.By the electronic blocking device Part I 21 and institute
State and connect the first power supply and second source respectively between Part II 22, therefore the felt pad 24 can be isolated；Preferably,
The felt pad 24 is high temperature resistant material, it is further preferable that felt pad 24 described in the present embodiment is alundum (Al2O3) felt pad.
As an example, passing through insulating screw 23 between the Part I 21 and Part II 22 of the electronic blocking device 2
It is fixedly connected.Certainly, it is not limited thereto in an actual embodiment, can is the exhausted of other modes in other specific examples
Edge is connected.
As an example, the material of the Part I 21 of the electronic blocking device and Part II 22 is graphite.In reality
In example, safeguard that graphite must clean to ensure the ability of generation electronics every time.
Embodiment two
The utility model also provides a kind of ion implantation equipment, and the ion implantation equipment is included as described in embodiment one
Any one ion neutralization reactor.The concrete structure of the ion neutralization reactor refers to embodiment one, herein no longer
It is tired to state.
In sum, the utility model provides a kind of ion neutralization reactor and ion implantation equipment, the ion
Neutralization reactor includes secondary device 1 and electronic blocking device 2, and the secondary device 1 includes filament
11 and metal sleeve 12, wherein, the two ends of the filament 11 are provided with filament supply 13, and the metal sleeve 12 is placed on the lamp
The periphery of silk 11；The electronic blocking device 2 is located at the outside of the secondary device 1, including Part I 21 and second
Part 22, wherein, it is provided with opening 211 on the Part I, the electricity of the opening 211 and the secondary device
Son transmitting position correspondence；The ion beam 3 leads between the Part I 21 and Part II 22 of the electronic blocking device 2
Cross, and reach the wafer for receiving ion implanting.By such scheme, electronics can be produced in the case where any gas is not passed through
To neutralize the positive charge entrained by ion beam, it is possible to obtain enough secondary electrons as required.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art can all be carried out under without prejudice to spirit and scope of the present utility model to above-described embodiment
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model
All equivalent modifications completed under god and technological thought or change, should be covered by claim of the present utility model.
Claims (11)
1. a kind of ion neutralization reactor, for neutralizing the positive charge entrained by ion implantation process intermediate ion beam, its feature exists
In, the ion neutralization reactor includes secondary device, electronic blocking device,
The secondary device includes filament and metal sleeve, wherein, the filament two ends are provided with filament supply, institute
State metal sleeve and be placed on the filament periphery；
The electronic blocking device is located at secondary device outside, including Part I and Part II, wherein,
Opening is provided with the Part I, the opening is corresponding with the electron emission sites of the secondary device；
The ion beam passes through between the electronic blocking device Part I and Part II, and arrival receives ion implanting
Wafer.
2. ion neutralization reactor according to claim 1, it is characterised in that set between the filament and the metal sleeve
Additional power source is equipped with, wherein, the additional power source negative pole connects the filament supply positive pole, and the additional power source positive pole connects institute
State metal sleeve.
3. ion neutralization reactor according to claim 1, it is characterised in that the electronic blocking device Part I with
First power supply is connected, and the electronic blocking device Part II is connected with second source.
4. ion neutralization reactor according to claim 3, it is characterised in that first power supply and the second source
There is the adjustment space of 5V.
5. ion neutralization reactor according to claim 1, it is characterised in that the electronic blocking device Part I and
The 3rd power supply is provided between Part II, wherein, the negative pole of the 3rd power supply connects first, the electronic blocking device
Point, the positive pole of the 3rd power supply connects the electronic blocking device Part II.
6. ion neutralization reactor according to claim 5, it is characterised in that the voltage of the 3rd power supply is adjustable.
7. ion neutralization reactor according to claim 1, it is characterised in that in the electronic blocking device Part II
Felt pad is provided between Part I, the Part I is dielectrically separated from the Part II.
8. ion neutralization reactor according to claim 7, it is characterised in that the felt pad is alundum (Al2O3) insulation
Pad.
9. ion neutralization reactor according to claim 1, it is characterised in that the Part I of the electronic blocking device
It is fixedly connected by insulating screw and Part II between.
10. ion neutralization reactor according to claim 1, it is characterised in that first of the electronic blocking device
Divide and the material of Part II is graphite.
11. a kind of ion implantation equipments, it is characterised in that the ion implantation equipment is included such as any one of claim 1-10
Described ion neutralization reactor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621363158.6U CN206259318U (en) | 2016-12-12 | 2016-12-12 | Ion neutralization reactor and ion implantation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621363158.6U CN206259318U (en) | 2016-12-12 | 2016-12-12 | Ion neutralization reactor and ion implantation equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206259318U true CN206259318U (en) | 2017-06-16 |
Family
ID=59029880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621363158.6U Active CN206259318U (en) | 2016-12-12 | 2016-12-12 | Ion neutralization reactor and ion implantation equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206259318U (en) |
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2016
- 2016-12-12 CN CN201621363158.6U patent/CN206259318U/en active Active
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