CN206256164U - A kind of depositing SiC equipment and its inlet duct - Google Patents
A kind of depositing SiC equipment and its inlet duct Download PDFInfo
- Publication number
- CN206256164U CN206256164U CN201621396753.XU CN201621396753U CN206256164U CN 206256164 U CN206256164 U CN 206256164U CN 201621396753 U CN201621396753 U CN 201621396753U CN 206256164 U CN206256164 U CN 206256164U
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- Prior art keywords
- tank
- exhaust outlet
- inlet duct
- mts
- blending tank
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Abstract
The utility model provides a kind of inlet duct of depositing SiC equipment, including MTS fluid reservoirs, blending tank and surge tank, MTS fluid reservoirs are provided with hydrogen inlet manifold road, hydrogen inlet manifold road opening extend into MTS liquid levels lower section, fluid reservoir exhaust outlet is additionally provided with the top of MTS fluid reservoirs, fluid reservoir exhaust outlet is connected by the first pipeline with the first air inlet of blending tank, blending tank is additionally provided with the second air inlet, second air inlet is used to be input into argon gas, blending tank is provided with blending tank exhaust outlet, blending tank exhaust outlet is connected by second pipe with the air inlet of surge tank, surge tank is provided with surge tank exhaust outlet, surge tank exhaust outlet is connected by the 3rd pipeline with the body of heater of depositing SiC equipment.Inlet duct of the present utility model, sets blending tank and surge tank, and process gas is also easier to control by that can reduce pressure oscillation, the pressure of gas after two tank bodies.
Description
Technical field
The utility model belongs to chemical vapor depsotition equipment field, and in particular to a kind of air inlet dress of depositing SiC equipment
Put.
Background technology
Gas phase deposition technology is, using physics, the chemical process occurred in gas phase, functional gold to be formed in workpiece surface
Category, nonmetallic or compound coat.Chemical vapor deposition refers to anti-containing the gaseous reactant or liquid for constituting film element
Answer the steam of agent and other gases introduce reative cell needed for reaction, the process of chemical reaction generation film occurs in substrate surface.
Depositing SiC equipment is used for material surface ORC and matrix with trichloromethyl silane (MTS) as source of the gas
It is modified.For the deposition effect for obtaining, it is necessary to which flow and pressure to MTS carry out accurate control, it is ensured that deposition gas in burner hearth
Stream stabilization, pressure oscillation is within the scope of specifying.Existing depositing SiC equipment inlet duct, is existed using hydrogen and argon gas
Mixed in MTS fluid reservoirs, then carry MTS gases and be directly entered body of heater, gas pulsation is larger, and cracked gas stream is unstable,
Cause deposition velocity unstable, coating is uneven, the associativity of coating material is bad.
Utility model content
Technical problem to be solved in the utility model is, there is provided one kind can precise control depositing SiC equipment enter
The inlet duct of atmospheric pressure.In order to solve the above-mentioned technical problem, the technical solution adopted in the utility model is：
A kind of inlet duct of depositing SiC equipment, including MTS fluid reservoirs, blending tank and surge tank, the MTS liquid storages
Tank is provided with hydrogen inlet manifold road, and hydrogen inlet manifold road opening extend into MTS liquid levels lower section, the top of the MTS fluid reservoirs
Portion is additionally provided with fluid reservoir exhaust outlet, and the fluid reservoir exhaust outlet passes through the first air inlet phase of the first pipeline and the blending tank
Even, the blending tank is additionally provided with the second air inlet, and second air inlet is used to be input into argon gas, and the blending tank is provided with blending tank
Exhaust outlet, the blending tank exhaust outlet is connected by second pipe with the air inlet of the surge tank, and the surge tank is provided with slow
Tank exhaust outlet is rushed, the surge tank exhaust outlet is connected by the 3rd pipeline with the body of heater of depositing SiC equipment.
Further, in the utility model is a kind of preferred embodiment, the depositing SiC equipment in such scheme
Inlet duct also include controller, pressure transmitter and electric control valve, the pressure transmitter be arranged on the surge tank or
On 3rd pipeline, the electric control valve is arranged on the 3rd pipeline, the pressure transmitter and the controller
It is connected, the controller is connected with the electric control valve, the controller receives pressure transmitter signal post-processing and exports
Control signal gives the electric control valve.
Further, the pressure transmitter sensing unit described in such scheme is ceramic diaphragm.
It is further preferred that the admission pressure control accuracy in the 3rd pipeline is higher than ± Pa.
On the other hand, on the basis of above-mentioned inlet duct, the utility model additionally provides a kind of depositing SiC equipment,
Including inlet duct and body of heater, the inlet duct is connected with the body of heater, wherein, the inlet duct is specially such scheme
In any one inlet duct.
Inlet duct of the present utility model, there is provided blending tank and surge tank, hydrogen is introduced into MTS fluid reservoirs, then takes
Band MTS gases are mixed into blending tank with argon gas, enter back into surge tank, are finally entered body of heater and are deposited.Mixing is set
Tank and surge tank, process gas are also easier to control by that can reduce pressure oscillation, the pressure of gas after two tank bodies.
Brief description of the drawings
In order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art, below will be to embodiment
Or the accompanying drawing to be used needed for description of the prior art is briefly described, it should be apparent that, drawings in the following description are only
It is that, in order to more fully understand the utility model, and should not be construed to limitation of the present utility model.For the common skill in this area
For art personnel, on the premise of not paying creative work, other accompanying drawings can also be obtained according to the accompanying drawing for providing.
Fig. 1 is a kind of structural representation of preferred embodiment of inlet duct of depositing SiC equipment described in the utility model
Figure
Specific embodiment
In order that those skilled in the art more fully understand the technical scheme in the application, below in conjunction with the application reality
The accompanying drawing in example is applied, the technical scheme in the embodiment of the present application is clearly and completely described, it is clear that described implementation
Example is only some embodiments of the present application, rather than whole embodiments.
Refer to Fig. 1, the inlet duct of the depositing SiC equipment that the present embodiment is provided, including MTS fluid reservoirs 1, mixing
Tank 2 and surge tank 3, MTS fluid reservoirs 1 are provided with hydrogen inlet manifold road 11, and the opening of hydrogen inlet manifold road 11 is extend under MTS liquid levels
Side, the top of MTS fluid reservoirs 1 is additionally provided with fluid reservoir exhaust outlet 12, and fluid reservoir exhaust outlet 12 is by the first pipeline 51 and blending tank 2
The first air inlet 21 be connected, blending tank 2 is additionally provided with the second air inlet 22, and the second air inlet 22 is used to be input into argon gas, blending tank 2
The exhaust outlet of blending tank 2 is provided with, the exhaust outlet of blending tank 2 is connected by second pipe 52 with the air inlet 31 of surge tank 3, surge tank 3
Surge tank exhaust outlet 32 is provided with, surge tank exhaust outlet 32 is connected by the 3rd pipeline 53 with the body of heater 4 of depositing SiC equipment.
Depositing SiC equipment in technical process, for the deposition effect for obtaining, it is necessary to the flow and pressure of MTS
Carry out accurate control, it is ensured that deposition steady air current in burner hearth, pressure oscillation is within the scope of specifying.If gas pulsation compared with
Greatly, cracked gas stream is unstable, is easy for causing deposition velocity unstable, and coating is uneven, and the associativity of coating material is bad.This
The inlet duct of embodiment, there is provided blending tank 2 and surge tank 3, hydrogen is introduced into MTS fluid reservoirs 1, then carries MTS gases
Mixed with argon gas into blending tank 2, entered back into surge tank 3, finally entered body of heater 4 and deposited.Blending tank 2 is set to ease up
Tank 3 is rushed, process gas is also easier to control by that can reduce pressure oscillation, the pressure of gas after two tank bodies.
The inlet duct of above-mentioned depositing SiC equipment can also be improved as follows：
Wherein, depositing SiC equipment inlet duct also includes controller, pressure transmitter 6 and electric control valve 7, pressure
Transmitter 6 is arranged on the pipeline 53 of surge tank 3 or the 3rd, and electric control valve 7 is arranged on the 3rd pipeline 53, pressure transmitter 6
It is connected with controller, controller is connected with electric control valve 7, controller receives the signal post-processing of pressure transmitter 6 and exports control
Signal processed is to electric control valve 7.The stream pressure signal that the detection of pressure transmitter 6 on 3rd pipeline 53 enters before body of heater 4, so
After pass to controller, controller is processed signal according to process conditions, output control signal control electric control valve 7 enter
Row regulation, can realize the recent pressure control accurate of body of heater 4.
Because MTS has strong corrosivity, the sensing unit of pressure transmitter 6 is ceramic diaphragm in such scheme, can
Acid-resistant anti-corrosion, can under the acid atmosphere of MTS long-term use.
Preferably, the admission pressure control accuracy in the 3rd pipeline 53 is higher than ± 15Pa.
On the other hand, on the basis of above-mentioned inlet duct, the utility model additionally provides a kind of depositing SiC equipment,
Including inlet duct and body of heater 4, inlet duct is connected with body of heater 4, wherein, inlet duct is specially any one in such scheme
Plant inlet duct.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill of the art
For personnel, the improvement without creative work made on the premise of the application principle is not departed from all is considered as the application's
Protection domain.
Claims (5)
1. a kind of inlet duct of depositing SiC equipment, it is characterised in that：Ease up including MTS fluid reservoirs (1), blending tank (2)
Tank (3) is rushed, the MTS fluid reservoirs (1) are provided with hydrogen inlet manifold road (11), and hydrogen inlet manifold road (11) opening extend into
MTS liquid levels lower section, is additionally provided with fluid reservoir exhaust outlet (12), the fluid reservoir exhaust outlet (12) at the top of the MTS fluid reservoirs (1)
It is connected with first air inlet (21) of the blending tank (2) by the first pipeline (51), the blending tank (2) is additionally provided with second and enters
Gas port (22), second air inlet (22) is for being input into argon gas, and the blending tank (2) is provided with blending tank (2) exhaust outlet, described
Blending tank (2) exhaust outlet is connected by second pipe (52) with the air inlet (31) of the surge tank (3), the surge tank (3)
Surge tank exhaust outlet (32) is provided with, the surge tank exhaust outlet (32) is by the 3rd pipeline (53) and the stove of depositing SiC equipment
Body (4) is connected.
2. the inlet duct of depositing SiC equipment according to claim 1, it is characterised in that：Also include controller, pressure
Power transmitter (6) and electric control valve (7), the pressure transmitter (6) are arranged on the surge tank (3) or the 3rd pipeline
(53) on, the electric control valve (7) is arranged on the 3rd pipeline (53), the pressure transmitter (6) and the control
Device is connected, and the controller is connected with the electric control valve (7), and the controller is located after receiving pressure transmitter (6) signal
Manage and output control signal is to the electric control valve (7).
3. the inlet duct of depositing SiC equipment according to claim 2, it is characterised in that：Described pressure transmitter
(6) sensing unit is ceramic diaphragm.
4. the inlet duct of the depositing SiC equipment according to claim 1-3 any one, it is characterised in that：Described
Admission pressure control accuracy in three pipelines (53) is higher than ± 15Pa.
5. a kind of depositing SiC equipment, including inlet duct and body of heater (4), the inlet duct are connected with the body of heater (4),
It is characterized in that：The inlet duct is specially the inlet duct described in claim 1-4 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621396753.XU CN206256164U (en) | 2016-12-19 | 2016-12-19 | A kind of depositing SiC equipment and its inlet duct |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621396753.XU CN206256164U (en) | 2016-12-19 | 2016-12-19 | A kind of depositing SiC equipment and its inlet duct |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206256164U true CN206256164U (en) | 2017-06-16 |
Family
ID=59030377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621396753.XU Withdrawn - After Issue CN206256164U (en) | 2016-12-19 | 2016-12-19 | A kind of depositing SiC equipment and its inlet duct |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206256164U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435527A (en) * | 2016-12-19 | 2017-02-22 | 湖南顶立科技有限公司 | Silicon carbide deposition apparatus and air inlet device thereof |
-
2016
- 2016-12-19 CN CN201621396753.XU patent/CN206256164U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106435527A (en) * | 2016-12-19 | 2017-02-22 | 湖南顶立科技有限公司 | Silicon carbide deposition apparatus and air inlet device thereof |
| CN106435527B (en) * | 2016-12-19 | 2019-02-05 | 湖南顶立科技有限公司 | A kind of depositing SiC equipment and its inlet duct |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170616 Effective date of abandoning: 20190205 |